CN108681209B - 检测设备及方法、图案形成设备、获取方法和制造方法 - Google Patents

检测设备及方法、图案形成设备、获取方法和制造方法 Download PDF

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Publication number
CN108681209B
CN108681209B CN201810242026.5A CN201810242026A CN108681209B CN 108681209 B CN108681209 B CN 108681209B CN 201810242026 A CN201810242026 A CN 201810242026A CN 108681209 B CN108681209 B CN 108681209B
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China
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mark
substrate
optical system
image
substrate holder
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CN201810242026.5A
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English (en)
Chinese (zh)
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CN108681209A (zh
Inventor
藤嶋浩史
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F2009/005—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN201810242026.5A 2017-03-24 2018-03-22 检测设备及方法、图案形成设备、获取方法和制造方法 Active CN108681209B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-059923 2017-03-24
JP2017059923A JP6945316B2 (ja) 2017-03-24 2017-03-24 検出装置、パターン形成装置、取得方法、検出方法、および物品製造方法

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CN108681209A CN108681209A (zh) 2018-10-19
CN108681209B true CN108681209B (zh) 2021-01-01

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US (1) US10545415B2 (enExample)
EP (1) EP3379333B1 (enExample)
JP (1) JP6945316B2 (enExample)
CN (1) CN108681209B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018152202A1 (en) * 2017-02-14 2018-08-23 Massachusetts Institute Of Technology Systems and methods for automated microscopy
WO2020064265A1 (en) * 2018-09-24 2020-04-02 Asml Netherlands B.V. A process tool and an inspection method
JP2020112605A (ja) * 2019-01-08 2020-07-27 キヤノン株式会社 露光装置およびその制御方法、および、物品製造方法
JP7339826B2 (ja) * 2019-09-19 2023-09-06 キヤノン株式会社 マーク位置決定方法、リソグラフィー方法、物品製造方法、プログラムおよびリソグラフィー装置
CN113048905B (zh) * 2019-12-27 2022-08-19 上海微电子装备（集团）股份有限公司 对准标记图像制作方法、对准标记测量方法及测量装置
CN112539706B (zh) * 2020-12-09 2022-09-30 深圳友讯达科技股份有限公司 一种晶圆薄片切割质量检测设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922325A (ja) 1982-07-29 1984-02-04 Toshiba Corp 電子ビ−ム描画装置
US6768539B2 (en) * 2001-01-15 2004-07-27 Asml Netherlands B.V. Lithographic apparatus
US6525805B2 (en) * 2001-05-14 2003-02-25 Ultratech Stepper, Inc. Backside alignment system and method
JP2003059807A (ja) * 2001-08-20 2003-02-28 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
EP1341046A3 (en) * 2002-03-01 2004-12-15 ASML Netherlands B.V. Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods
TW594431B (en) * 2002-03-01 2004-06-21 Asml Netherlands Bv Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods
EP1477861A1 (en) * 2003-05-16 2004-11-17 ASML Netherlands B.V. A method of calibrating a lithographic apparatus, an alignment method, a computer program, a lithographic apparatus and a device manufacturing method
JP4340638B2 (ja) * 2004-03-02 2009-10-07 エーエスエムエル ネザーランズ ビー．ブイ． 基板の表側または裏側に結像するためのリソグラフィ装置、基板識別方法、デバイス製造方法、基板、およびコンピュータプログラム
US7420676B2 (en) * 2004-07-28 2008-09-02 Asml Netherlands B.V. Alignment method, method of measuring front to backside alignment error, method of detecting non-orthogonality, method of calibration, and lithographic apparatus
US7398177B2 (en) * 2004-10-15 2008-07-08 Asml Netherlands B.V. Measurement substrate, substrate table, lithographic apparatus, method of calculating an angle of an alignment beam of an alignment system, and alignment verification method
US7928591B2 (en) * 2005-02-11 2011-04-19 Wintec Industries, Inc. Apparatus and method for predetermined component placement to a target platform
US7501215B2 (en) * 2005-06-28 2009-03-10 Asml Netherlands B.V. Device manufacturing method and a calibration substrate
TWI547769B (zh) * 2007-12-28 2016-09-01 尼康股份有限公司 An exposure apparatus, a moving body driving system, a pattern forming apparatus, and an exposure method, and an element manufacturing method
JP2010034331A (ja) * 2008-07-29 2010-02-12 Canon Inc 露光装置およびデバイス製造方法
JP5652105B2 (ja) * 2010-10-13 2015-01-14 株式会社ニコン 露光装置
CN103488064B (zh) * 2012-06-14 2015-11-18 上海微电子装备有限公司 一种背面对准装置及背面对准基底贴片方法
WO2016008647A1 (en) * 2014-07-16 2016-01-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product
DE102015112651B3 (de) * 2015-07-31 2016-07-28 Carl Zeiss Industrielle Messtechnik Gmbh Verfahren und Messgerät zum Bestimmen von dimensionalen Eigenschaften eines Messobjekts

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Publication number Publication date
US20180275535A1 (en) 2018-09-27
EP3379333A3 (en) 2018-10-17
EP3379333B1 (en) 2023-07-19
JP6945316B2 (ja) 2021-10-06
JP2018163247A (ja) 2018-10-18
EP3379333A2 (en) 2018-09-26
CN108681209A (zh) 2018-10-19
US10545415B2 (en) 2020-01-28

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