CN108630627A - 半导体封装及半导体封装的标记方法 - Google Patents

半导体封装及半导体封装的标记方法 Download PDF

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CN108630627A
CN108630627A CN201710713264.5A CN201710713264A CN108630627A CN 108630627 A CN108630627 A CN 108630627A CN 201710713264 A CN201710713264 A CN 201710713264A CN 108630627 A CN108630627 A CN 108630627A
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高野勇佑
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Kioxia Corp
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Abstract

本发明的实施方式提供一种视认性提高的半导体封装及半导体封装的标记方法。实施方式的半导体封装具备半导体元件、密封材料、屏蔽膜以及识别膜。所述密封材料设置在所述半导体元件的侧面上及上表面上。所述屏蔽膜设置在所述密封材料的侧面上及上表面上。所述识别膜设置在所述屏蔽膜的上表面上，具有含二价氧化钛的第1部分及含四价氧化钛的第2部分。

Description

半导体封装及半导体封装的标记方法
[相关申请]
本申请享有以日本专利申请2017-56365号(申请日：2017年3月22日)为基础申请的优先权。本申请通过参照该基础申请而包含基础申请的全部内容。
技术领域
本发明的实施方式涉及一种半导体封装及半导体封装的标记方法。
背景技术
在半导体封装中，为了降低EMI(Electro Magnetic Interference，电磁干扰)的影响，而在半导体元件之上隔着密封材料设置屏蔽膜。并且，为了识别半导体封装，而在半导体封装上形成标记。在对密封材料进行激光加工之后，沿着对密封材料加工而产生的凹凸形成屏蔽膜，由此形成标记。对于这种半导体封装，要求提高标记的视认性。
发明内容
本发明的实施方式提供一种视认性提高的半导体封装及半导体封装的标记方法。
根据本发明的实施方式，提供一种具备半导体元件、密封材料、屏蔽膜以及识别膜的半导体封装。所述密封材料设置在所述半导体元件的侧面上及上表面上。所述屏蔽膜设置在所述密封材料的侧面上及上表面上。所述识别膜设置在所述屏蔽膜的上表面上，具有含二价氧化钛的第1部分及含四价氧化钛的第2部分。
附图说明
图1(a)及(b)是表示实施方式的半导体封装的图。
图2(a)及(b)是表示实施方式的变化例的半导体封装的图。
图3是表示实施方式的半导体封装的标记方法的流程图。
具体实施方式
以下，一边参照附图，一边对本发明的各实施方式进行说明。
此外，附图为示意图或概念图，各部分的厚度与宽度的关系、部分间的大小的比率等未必与实物相同。而且，即便在表示相同部分的情况下，也有彼此的尺寸或比率根据附图而不同地表示的情况。
此外，在本案说明书及各图中，对与关于已出现过的图在上文叙述过的要素相同的要素标注相同的符号并适当省略详细说明。
(第1实施方式)
图1(a)及(b)是表示实施方式的半导体封装的图。
图2(a)及(b)是表示实施方式的变化例的半导体封装的图。
如图1(a)及(b)所示，在半导体封装1中设置有衬底10、半导体元件20、密封材料30、屏蔽膜40、保护膜50以及识别膜60。
衬底10例如为半导体衬底且包含硅(Si)。衬底10例如也可以包含金属。衬底10具有例如矩形状，且作为基底发挥功能。
半导体元件20设置在衬底10上。半导体元件20例如为设置在衬底10上的半导体芯片。
密封材料30以覆盖半导体元件20的侧面及上表面的方式设置在衬底10的上表面上。密封材料30例如包含树脂。作为形成密封材料30的树脂，可列举热硬化性树脂或热塑性树脂。密封材料30也可以由光硬化性树脂形成。
屏蔽膜40设置在衬底10的侧面上及密封材料30上。屏蔽膜40覆盖衬底10的侧面、密封材料30的侧面及上表面。通过像这样设置屏蔽膜40，半导体元件20的侧面及上表面被覆盖，从而能够降低EMI的影响。屏蔽膜40例如包含铜(Cu)。
保护膜50以覆盖侧面及上表面的方式设置在屏蔽膜40上。保护膜50例如包含铁(Fe)、铬(Cr)及镍(Ni)中的至少任一种。例如，保护膜50为不锈钢，且为铁(Fe)、铬(Cr)及镍(Ni)的合金或者铁(Fe)及铬(Cr)的合金。例如，保护膜50的厚度为300纳米以上。
如图1(a)所示，识别膜60设置在保护膜50的上表面上。识别膜60也能以覆盖侧面及上表面的方式设置在保护膜50上。识别膜60例如为包含氧化钛(TiO)的膜。当识别膜60为包含氧化钛的膜时，例如，以钛(Ti)为靶使用氧气(O2)通过溅镀法成膜于保护膜50。也可以通过将包含氧化钛的材料进行丝网印刷而成膜，还可以通过喷涂将包含氧化钛的材料涂膜。
如图1(b)所示，识别膜60具有第1部分60a及第2部分60b。第1部分60a是在保护膜50的上表面上形成识别膜60之后未进行激光照射的部分。另一方面，第2部分60b是在保护膜50的上表面上形成识别膜60之后进行了激光照射的部分。也就是说，第2部分60b是通过激光照射而被加工后的部分，相当于被标记的部分。
当识别膜60为包含氧化钛(TiO)的膜时，第1部分60a未被激光照射，因此包含二价氧化钛(TiO)。另一方面，第2部分60b被激光照射而包含四价氧化钛(TiO2)。第1部分60a(TiO)的颜色为黑色，第2部分60b(TiO2)的颜色为白色。也就是说，通过激光照射，识别膜60的一部分从黑色变化成白色。通过激光照射而进行由以下化学式(1)表示的反应。
2TiO+O2→2TiO2…(1)
作为激光照射的加工条件，激光例如为YAG(Yttrium Aluminum Garnet，钇-铝-石榴石)激光。所述化学式(1)表示的化学反应是在500℃到600℃的温度下进行，因此，激光输出就是所述化学式(1)表示的化学反应进行的程度的输出。例如，激光输出为5W。而且，500℃到600℃的温度是只要利用激光进行标记便能够达到的温度，使用半导体封装1的组装步骤或测试步骤为300℃左右，因此，在包含回焊处理等的组装步骤中，识别膜60不会变色，而能够确保被标记的部分(第2部分60b)的视认性。
识别膜60的厚度达到了在通过激光使氧化钛反应后能够识别黑色(第1部分60a)及白色(第2部分60b)的程度。如果除了识别标记以外，还作为用来降低EMI的影响的保护膜使用，那么识别膜60的厚度理想为0.1微米以上。
接下来，对半导体封装的变化例进行说明。
如图2(a)及(b)所示，在半导体封装2中设置有衬底10、半导体元件20、密封材料30、屏蔽膜40以及识别膜60。也就是说，相较于半导体封装1，本变化例的半导体封装2中未设置保护膜50。
如图2(a)所示，识别膜60以覆盖侧面及上表面的方式设置在屏蔽膜40上。当识别膜60为包含氧化钛的膜时，例如以钛为靶使用氧气通过溅镀法成膜于屏蔽膜40。
如图2(b)所示，识别膜60具有第1部分60a及第2部分60b。第1部分60a是在屏蔽膜40的上表面上形成识别膜60后未进行激光照射的部分。另一方面，第2部分60b是在屏蔽膜40的上表面上形成识别膜60后进行了激光照射的部分。也就是说，第2部分60b是通过激光照射而被加工后的部分，相当于被标记的部分。当识别膜60为包含氧化钛的膜时，通过激光照射，识别膜60的一部分从黑色变化为白色。
对半导体封装的标记方法进行说明。
图3是表示实施方式的半导体封装的标记方法的流程图。
如图3所示，准备配置有半导体元件20的衬底10(S110)。
接着，在半导体元件20上形成密封材料30(S120)。密封材料30例如包含树脂，且覆盖半导体元件20的侧面及上表面。
接着，在密封材料30上依次形成屏蔽膜40及保护膜50(S130)。屏蔽膜40覆盖密封材料30的侧面及上表面，保护膜50覆盖屏蔽膜40的侧面及上表面。
屏蔽膜40及保护膜50是由众所周知的方法成膜。例如，屏蔽膜40及保护膜50由溅镀法形成。此外，保护膜50也可以不形成在屏蔽膜40上。
接着，在保护膜50上形成识别膜60(S140)。识别膜60例如包含氧化钛，且覆盖保护膜50的上表面。例如，识别膜60由溅镀法形成。例如，在通过溅镀法形成屏蔽膜40、保护膜50及识别膜60的情况下，可以在相同的腔室内连续地形成。
接着，对识别膜60进行激光照射而加工(S150)。作为激光照射的加工条件，例如，激光为YAG激光，激光输出为5W。通过激光照射，识别膜60具有未被激光照射的第1部分60a及通过激光照射而被加工后的第2部分60b。第2部分60b相当于被标记的部分。
当识别膜60为包含氧化钛(TiO)的膜时，第1部分60a的颜色因未被激光照射而保持为黑色。另一方面，第2部分60b的颜色被激光照射而变为白色。
这样一来，通过利用激光照射使识别膜60的一部分从黑色变为白色，而对半导体封装1进行标记。
接下来，对本实施方式的效果进行说明。
半导体封装中存在如下情况，即，在对密封材料进行激光加工之后，沿着对密封材料加工而产生的凹凸形成屏蔽膜，由此形成标记。也就是说，通过使屏蔽膜追随于凹凸成膜，而出现阴影，从而视认标记。在像这样通过激光形成标记的情况下，考虑到热对半导体元件的影响，降低激光输出而形成标记。由此，密封材料中较浅地形成因激光产生的凹凸，如果在该浅凹凸中形成屏蔽膜，那么阴影也会变薄而导致视认性变差。
本实施方式的半导体封装1中，设置有具有通过激光照射而变色的部分(第2部分60b)的识别膜60。由此，能够确保半导体封装1的标记的视认性。
而且，在本实施方式中，在形成屏蔽膜40及保护膜50之后对识别膜60进行激光加工，因此，与由密封材料的凹凸形成标记的情况相比，降低了热对半导体元件的影响。而且，通过利用激光照射使识别膜60变色而形成标记，因此，与利用激光输出形成浅凹凸不同，能够确保标记的视认性。进而，能够使密封材料30变薄而减小半导体封装1整体的厚度。
而且，在本实施方式中，识别膜60例如在通过溅镀法形成之后被激光照射，因此，能够利用现有的设备容易地形成识别膜60。
如上所述，作为一例，对具有降低EMI的影响的构造的半导体封装1进行了说明，但并不限定于此。也就是说，半导体封装1中也可以不设置屏蔽膜40。半导体封装1的构造中，只要设置有具有第2部分60b的识别膜60即可。
已对本发明的若干实施方式进行了说明，但这些实施方式是作为示例而提出，并不意图限定发明的范围。这些新颖的实施方式能够以其它各种方式加以实施，且可在不脱离发明主旨的范围内进行各种省略、替换、变更。这些实施方式或其变化包含在发明的范围或主旨中，并且包含在权利要求书所记载的发明及其均等的范围内。
[符号的说明]
1、2 半导体封装
10 衬底
20 半导体元件
30 密封材料
40 屏蔽膜
50 保护膜
60 识别膜
60a 第1部分
60b 第2部分

Claims (5)

1.一种半导体封装，其特征在于具备：
半导体元件；
密封材料，设置在所述半导体元件的侧面上及上表面上；
屏蔽膜，设置在所述密封材料的侧面上及上表面上；以及
识别膜，设置在所述屏蔽膜的上表面上，具有含二价氧化钛的第1部分及含四价氧化钛的第2部分。
2.根据权利要求1所述的半导体封装，其特征在于：
所述识别膜还设置在所述屏蔽膜的侧面上，含二价氧化钛的部分设置在所述屏蔽膜的侧面上的识别膜中。
3.根据权利要求1或2所述的半导体封装，其特征在于：
还具备设置在所述屏蔽膜及所述识别膜之间的保护膜。
4.一种半导体封装的标记方法，其特征在于具备如下步骤：
在配置于衬底的半导体元件上形成密封材料；
以覆盖所述半导体元件的方式在所述密封材料上形成屏蔽膜；
在所述屏蔽膜上形成含氧化钛的识别膜；以及
对所述识别膜照射激光，形成含二价氧化钛的第1部分及含四价氧化钛的第2部分。
5.根据权利要求4所述的半导体封装的标记方法，其特征在于：
还具备在所述屏蔽膜与所述识别膜之间形成保护膜的步骤。
CN201710713264.5A 2017-03-22 2017-08-18 半导体封装及半导体封装的标记方法 Pending CN108630627A (zh)

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