CN108630263B - 存储设备及其控制方法 - Google Patents
存储设备及其控制方法 Download PDFInfo
- Publication number
- CN108630263B CN108630263B CN201710728886.5A CN201710728886A CN108630263B CN 108630263 B CN108630263 B CN 108630263B CN 201710728886 A CN201710728886 A CN 201710728886A CN 108630263 B CN108630263 B CN 108630263B
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- China
- Prior art keywords
- memory cell
- current
- voltage
- read
- signal
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1697—Power supply circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-059602 | 2017-03-24 | ||
JP2017059602A JP2018163713A (ja) | 2017-03-24 | 2017-03-24 | メモリデバイス及びその制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108630263A CN108630263A (zh) | 2018-10-09 |
CN108630263B true CN108630263B (zh) | 2022-03-08 |
Family
ID=63581318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710728886.5A Active CN108630263B (zh) | 2017-03-24 | 2017-08-23 | 存储设备及其控制方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10431277B2 (zh) |
JP (1) | JP2018163713A (zh) |
CN (1) | CN108630263B (zh) |
TW (1) | TWI671741B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10832765B2 (en) * | 2018-06-29 | 2020-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Variation tolerant read assist circuit for SRAM |
JP2020135913A (ja) | 2019-02-25 | 2020-08-31 | キオクシア株式会社 | 半導体記憶装置 |
JP2020161201A (ja) * | 2019-03-27 | 2020-10-01 | キオクシア株式会社 | 半導体記憶装置 |
JP2021048184A (ja) | 2019-09-17 | 2021-03-25 | キオクシア株式会社 | 記憶装置 |
JP2021047950A (ja) | 2019-09-19 | 2021-03-25 | キオクシア株式会社 | 記憶装置 |
JP2021047969A (ja) | 2019-09-20 | 2021-03-25 | キオクシア株式会社 | メモリデバイス |
JP2021106066A (ja) * | 2019-12-27 | 2021-07-26 | キオクシア株式会社 | 半導体記憶装置 |
JP2021150497A (ja) | 2020-03-19 | 2021-09-27 | キオクシア株式会社 | 記憶装置 |
JP2022051347A (ja) * | 2020-09-18 | 2022-03-31 | キオクシア株式会社 | 半導体記憶装置およびその制御方法 |
JP2022051409A (ja) | 2020-09-18 | 2022-03-31 | キオクシア株式会社 | 可変抵抗型記憶装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6366501B1 (en) | 2000-02-29 | 2002-04-02 | Advanced Micro Devices, Inc. | Selective erasure of a non-volatile memory cell of a flash memory device |
US6829160B1 (en) * | 2001-04-06 | 2004-12-07 | Western Digital (Fremont), Inc. | Magnetic ram cell with amplification circuitry and MRAM memory array formed using the MRAM cells |
JP4737886B2 (ja) * | 2001-08-09 | 2011-08-03 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP3959417B2 (ja) | 2004-10-29 | 2007-08-15 | 株式会社東芝 | 半導体メモリの読み出し回路 |
KR100800158B1 (ko) * | 2006-08-09 | 2008-02-01 | 주식회사 하이닉스반도체 | 1-트랜지스터형 디램 구동 방법 |
US8116123B2 (en) * | 2008-06-27 | 2012-02-14 | Seagate Technology Llc | Spin-transfer torque memory non-destructive self-reference read method |
US7826260B2 (en) * | 2008-10-27 | 2010-11-02 | Seagate Technology Llc | Spin-transfer torque memory self-reference read and write assist methods |
US7876604B2 (en) * | 2008-11-05 | 2011-01-25 | Seagate Technology Llc | Stram with self-reference read scheme |
US7940592B2 (en) * | 2008-12-02 | 2011-05-10 | Seagate Technology Llc | Spin-torque bit cell with unpinned reference layer and unidirectional write current |
US9183911B2 (en) | 2011-11-17 | 2015-11-10 | Everspin Technologies, Inc. | Hybrid read scheme for spin torque MRAM |
US8923041B2 (en) * | 2012-04-11 | 2014-12-30 | Everspin Technologies, Inc. | Self-referenced sense amplifier for spin torque MRAM |
JP5444414B2 (ja) | 2012-06-04 | 2014-03-19 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
KR20140008745A (ko) * | 2012-07-11 | 2014-01-22 | 삼성전자주식회사 | 자기 메모리 장치 |
US9183947B1 (en) * | 2014-04-16 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Detecting write disturb in multi-port memories |
JP6674616B2 (ja) | 2015-06-10 | 2020-04-01 | パナソニック株式会社 | 半導体装置、半導体装置の読み出し方法、及び半導体装置を搭載したicカード |
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2017
- 2017-03-24 JP JP2017059602A patent/JP2018163713A/ja active Pending
- 2017-07-27 TW TW106125208A patent/TWI671741B/zh active
- 2017-08-23 CN CN201710728886.5A patent/CN108630263B/zh active Active
- 2017-09-13 US US15/703,340 patent/US10431277B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI671741B (zh) | 2019-09-11 |
TW201841155A (zh) | 2018-11-16 |
JP2018163713A (ja) | 2018-10-18 |
CN108630263A (zh) | 2018-10-09 |
US20180277186A1 (en) | 2018-09-27 |
US10431277B2 (en) | 2019-10-01 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Tokyo Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo Applicant before: Pangea Co.,Ltd. Address after: Tokyo Applicant after: Kaixia Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220209 Address after: Tokyo Applicant after: Pangea Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
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