CN108604591A - 摄像装置、摄像显示系统和显示装置 - Google Patents

摄像装置、摄像显示系统和显示装置 Download PDF

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Publication number
CN108604591A
CN108604591A CN201780009915.0A CN201780009915A CN108604591A CN 108604591 A CN108604591 A CN 108604591A CN 201780009915 A CN201780009915 A CN 201780009915A CN 108604591 A CN108604591 A CN 108604591A
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China
Prior art keywords
substrate
spill
photographic device
photographic
device portion
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CN201780009915.0A
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English (en)
Inventor
松本治
松本一治
柳川周作
五十岚崇裕
木洋
一木洋
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Sony Corp
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Sony Corp
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Publication of CN108604591A publication Critical patent/CN108604591A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01T1/16—Measuring radiation intensity
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    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
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Abstract

本发明的摄像装置设有：基板；以及多个器件部，多个器件部分别包括光电转换器，所述多个器件部彼此隔开地布置在所述基板上，所述光电转换器整体上形成凹形。

Description

摄像装置、摄像显示系统和显示装置
技术领域
本发明涉及检测比如α射线、β射线、γ射线或x射线等放射线的摄像装置、摄像显示系统和显示装置。
背景技术
应用于成像例如胸部等的大型平板检测器(FPD，flat panel detector)的许多摄像装置都采用非晶硅。对于这种摄像装置，其在对目标进行成像时与放射线源保持预定距离，由于摄像装置与放射线源相距一定距离，所以图像边缘的灵敏度降低，使得图像劣化。
因此，例如，PTL1提出了一种技术：利用表面形状加工过的光学纤维板来抑制如上所述的分辨率降低。
引用文献列表
专利文献
PTL 1：日本特开平H09-112301号公报
发明内容
然而，利用上述PTL1所公开的技术，光在光学纤维面板中易受限制(trap)。这会降低感光灵敏度，导致图像劣化。因此期望实现一种技术：在不使用这样的光学元件的情况下能够抑制图像劣化。
因此，期望提供能够抑制图像劣化的摄像装置、摄像显示系统和显示装置。
根据本发明实施例的摄像装置包括：基板；以及多个器件部，多个器件部各者包括光电转换器，所述多个器件部彼此隔开地布置在所述基板上，并且整体上形成凹形。
根据本发明实施例的摄像显示系统包括如上所述根据本发明的摄像装置。
在根据本发明实施例的摄像装置和摄像显示系统中，各自包括光电转换器的多个器件部布置为整体上形成凹形。相比于布置为平面形状的器件部，这样布置能抑制边缘的灵敏度劣化。而且，相比于将器件部连续布置在基板上且器件部之间没有间隔的情况，将多个器件部彼此隔开地布置在基板上，更易于保持凹形，并且能够减少因弯曲应力所致的失真发生。
根据本发明实施例的显示装置包括：基板；以及多个器件部，多个器件部各者包括发光器件，所述多个器件部彼此隔开地布置在所述基板上，并且整体上形成凹形。
在根据本发明实施例的显示装置中，各自包括发光器件的多个器件部布置为整体上形成凹形并且彼此隔开。相比于将器件部连续布置在基板上且器件部之间没有间隔的情况，这种布置更易于保持凹形，并且能够减少因弯曲应力所致的失真发生。
在根据本发明实施例的摄像装置和摄像显示系统中，各自包括光电转换器的多个器件部布置为整体上形成凹形。相比于布置为平面形状的器件部，这种布置能防止边缘的灵敏度劣化。而且，将多个器件部彼此隔开地布置在基板上，更易于保持凹形，并且能够减少因弯曲应力所致的失真发生。这样能够抑制器件部因失真所致的功能劣化。因此，能够抑制所获得图像的画质劣化。
在根据本发明实施例的显示装置中，各自包括发光器件的多个器件部整体上形成凹形并且彼此隔开地布置。这样更易于保持凹形，并且能够减少因弯曲应力所致的失真发生。这能够抑制器件部因失真所致的功能劣化。因此，能够抑制显示图像的画质劣化。
应当指出，上述内容只是本发明的示例。本发明的效果并不局限于上述效果，可以是任何其它效果或者进一步包括任何其它效果。
附图说明
图1是根据本发明实施例的摄像装置的示意构造的断面图。
图2是图1所示摄像装置的一部分的构造放大断面图。
图3是用于说明图1所示摄像装置的像素阵列部的平面构造的示意图。
图4是示出了图1所示摄像装置的器件部的电路构造的图。
图5是用于说明图1所示摄像装置的凹形的示意性断面图。
图6A是用于说明凹形的另一示例的示意性断面图。
图6B是用于说明凹形的另一示例的示意性断面图。
图7A是用于说明图1所示摄像装置的制造方法的工序的断面图。
图7B是接着图7A工序的断面图。
图7C是接着图7B工序的断面图。
图8是接着图7C工序的断面图。
图9是接着图8工序的断面图。
图10是根据比较例1的摄像装置的构造的示意图。
图11是根据比较例2的摄像装置的构造的示意图。
图12是图示图1所示摄像装置的与线源间的距离、凹形的弯曲度、边缘灵敏度之间关系的图表。
图13是图示根据变形例1的摄像装置的整体构造的功能框图。
图14是示出了图13所示像素阵列部的电路构造的图。
图15是示出了根据应用例的摄像显示系统的示意性构造的示例的图。
图16是根据变形例2的显示装置的构造的断面图。
具体实施方式
在下文中，参照附图详细说明本发明的一些实施例。应当指出，按以下顺序进行说明。
1.实施例(摄像装置的示例，其中，包括光电转换器和IV转换电路的多个器件部彼此隔开地布置，且形成凹形)
2.变形例1(具有无源像素电路的情况的示例)
3.应用例(摄像显示系统的示例)
4.变形例2(显示装置的示例)
<实施例>
[构造]
图1示出了根据本发明实施例的摄像装置(摄像装置1)的剖面构造的示例以及放射线源(线源300)。图2是作为图1一部分的区域A的放大图。摄像装置1是检测比如α射线、β射线、γ射线或x射线等放射线的放射线检测器，摄像装置1例如是间接转换系统的摄像装置。间接转换系统是指将放射线转换成光信号，之后再转换成电信号的系统。摄像装置1例如在配线基板10上依次包括像素阵列部11、波长转换层12和反射层13。
配线基板10例如在基板10a上包括多个配线层(配线层151)。基板10a例如包括玻璃、硅(Si)或者有机树脂等。包括基板10a的配线基板10呈弯曲形状，该弯曲形状在设有器件部11A的一侧(面对线源300一侧)具有凹面。基板10a包括具有可弯曲厚度的可弯曲材料(例如，在制造工序中，在基板10a薄化之后使其弯曲)。在配线基板10的面对器件部11A的区域上，例如，不设置开关器件，而只设有将电信号传输到器件部11A的配线层151，后文将说明。
像素阵列部11包括二维布置的多个器件部11A。每个器件部11A构成摄像装置1中的一个像素。
多个器件部11A包括相应的光电转换器，并且彼此隔开地布置(器件部11A之间有间隙)。多个器件部11A中的每一个都焊接在配线基板10上。光电转换器例如是光电二极管。光电转换器具有将入射光转换成电流信号的功能，并且在波长转换层12所处的一侧具有受光面。
例如，形成于配线基板10上的配线层151与器件部11A彼此电连接。配线层151形成于绝缘膜14a上，且埋在绝缘膜14b中。在配线层151上形成有穿过绝缘膜14b的下凸块金属UBM(Under Bump Metal)152，器件部11A隔着焊接层153形成于UBM 152上。形成有填埋层16来填充器件部11A之间的间隙。
绝缘膜14a和绝缘膜14b均包括比如二氧化硅(SiO2)和氮化硅(SiN)等无机绝缘膜，或者包括通过涂覆形成的有机树脂。配线层151可包括比如铝(Al)或铜(Cu)等元素物质，或者包括铝或铜的合金。示例的铝合金包括含有例如Cu、Si、SiCu的合金。UBM 152是含有例如镍(Ni)、铂(Pt)、金(Au)的层叠膜，该层叠膜作为焊接扩散抑制层。焊接层153包括含有例如以铅或锡为主要成分的合金，并且例如通过电解电镀、焊膏压印等方式形成。填埋层16包括例如比如二氧化硅和氮化硅等无机绝缘膜或者有机树脂。
波长转换层12将入射的放射线转换成波长在器件部11A的光电转换器的灵敏度范围内的射线，该波长转换层具体地包括荧光体(闪烁体)，荧光体(闪烁体)将比如α射线、β射线、γ射线或x射线等放射线转换成可见光。这种荧光体的示例包括掺杂有铊(Tl)或钠(Na)的碘化铯(CsI)、掺杂有铊(Tl)的碘化钠(NaI)。此外，这种荧光体的示例包括掺杂有铕(Eu)的溴化铯(CsBr)、掺杂有铕(Eu)的氟溴化铯(CsBrF)。波长转换层12包括例如柱状闪烁体或颗粒状闪烁体，并且其凹形对应于像素阵列部11的凹形。
反射层13的作用是将波长转换层12发出的与器件部11A相反方向的光返回至器件部11A。反射层13可包括基本上不透水的不透水材料。在这种情况下，反射层13可防止水分渗入到波长转换层12。反射层13可包括比如玻璃片等片状元件，也可包括例如铝的气相沉积膜。也可省略反射层13。
图3是用于说明包括如上所述的器件部11A的像素阵列部11的平面构造的示意图。图4示出了各器件部11A的电路构造。在该实施例中，器件部11A包括所谓的有源像素电路，有源像素电路包括IV转换电路(电流电压转换电路)，IV转换电路连同光电转换器(光电二极管，PD)一起，将光信号转换成电信号。
在像素阵列部11中，如图3所示，多个器件部11A以二维阵列的形式布置，且彼此间隔开。在像素阵列部11中，多条线以逐行(像素行)或者逐列(像素列)的形式布置。例如，分别向各器件部11A提供电源电压Vp、接地电压GND和SHP(采样和保持)切换控制电压Vg2的线La1、线La2、线La3按行形成。而且，分别向各器件部11A提供基准电压Vref、复位电压Vreset和地址切换控制电压Vg1的线Lb1、线Lb2、线Lb3，以及从各器件部11A读取信号电压Vout的线Lb4按列形成。
如图4所示，器件部11A包括例如光电二极管PD、地址开关SW1、构成SHP电路的开关SW2和比较器121、比较器122。通过上述各条线La1、La2、La3、Lb1、Lb2、Lb3提供用以驱动各器件部11A的电压，并且通过线Lb4读取信号电压。线La1～线La3以及线Lb1～线Lb4形成为配线基板10上的配线层151。
在该实施例中，如上所述的多个器件部11A(像素阵列部11)整体上具有凹形(布置成凹形)。特别地，在像素阵列部11的受光侧的表面S1呈凹形时，各器件部11A的凹形比像素阵列部11的凹形(由所有的多个器件部11A形成的凹形)平缓。即，使各器件部11A的凹形比配线基板10(基板10a)的弯曲形状平缓。而且，包括配线基板10(基板10a)、像素阵列部11、波长转换层12和反射层13的整个摄像装置1保持在弯曲状态。像素阵列部11的凹形沿着配线基板10的弯曲形状形成。
像素阵列部11的凹形的弯曲度例如期望为6度以上。虽然后文将会具体说明，但是这是因为例如在斜卧位摄像时在边缘中可以确保足够大的灵敏度。这里，如图5所示，弯曲度对应于连接像素阵列部11的受光侧表面S1的中心p1和受光侧表面的边缘p2的线段与接地面S2所成的角度(角度D)。如图1和图5所示，期望像素阵列部11的形状为从中心向边缘平缓弯曲。更期望的是，像素阵列部11的凹形具有曲率(凹形形成为弧状)。各器件部11A距线源300等距离地布置，这使得能够在整个像素阵列部11上实现均匀的分辨率。
然而，像素阵列部11的凹形并不局限于如上所述平缓弯曲的形状。像素阵列部11只是必须整体上形成凹形，而例如，如图6A所示，该凹形可以具有位于边缘p2所处一侧的弯曲部分。而且，如图6B所示，该凹形也可以具有在在中心p1处的弯曲部分。
[制造方法]
例如，按如下方式制造如上所述的摄像装置1。图7A～图9按加工顺序示出了制造摄像装置1的步骤。
首先，制造配线基板10。具体地，如图7A所示，通过CVD方法等在基板10a上形成包括上述材料的绝缘膜14a，之后，在绝缘膜14a上形成配线层151。例如按照以下方式形成配线层151。即，例如通过溅射方法等用上述材料形成膜，之后，采用光刻方法通过蚀刻(干蚀刻或湿蚀刻)处理该膜而形成配线层151。可选择地，通过溅射方法形成种子金属层和光致抗蚀剂膜，之后，图案化抗蚀剂膜的不需要配线的部分。然后，进行电解电镀，以在预定部分形成导电层，之后，去除抗蚀剂膜。之后，蚀刻导电膜来去除不需要的种子金属层和不需要的电镀膜。以这种方式形成了配线层151。
接着，如图7B所示，例如，通过CVD方法形成包括上述材料的绝缘膜14b，之后，形成UBM 152。具体地，在绝缘膜14b中形成开口，之后，例如通过电解电镀或化学镀在开口中形成包括上述材料的UBM152。以这种方式形成了配线基板10。
接着，如图7C所示，在配线基板10上焊接多个器件部11A。具体地，器件部11A隔着焊接层153覆盖在UBM 152上，之后，通过回流焊接来压合焊接层153，以将各器件部11A粘附到配线基板10上。这样能够使得多个器件部11A彼此隔开地安装在配线基板10上。
接着，如图8所示，在多个器件部11A上形成包括上述材料的填埋层16来填充器件部11A之间的间隙。之后，通过真空沉积法进行晶体成长来形成包括上述材料的波长转换层12。然后在波长转换层12上形成反射层13。
接着，如图9所示，在基板10a是比如玻璃和石英等硬基板的情况下，利用化学溶液或者通过物理研磨磨掉基板10a的一部分来薄化基板10a。具体地，进行薄化处理，直到基板10a具有物理上可弯曲的厚度为止。可选择地，在基板10a包括有机树脂的情况下，例如可通过在后侧的激光辐射使基板10a脱层(delaminate)(去除)。
应当指出，可在图7C所示的工序(安装器件部11A的工序)之后对基板10a进行薄化处理。而且，在使基板10a变薄或将其剥离之后，使配线基板10和像素阵列部11弯曲以在像素阵列部11的受光面侧形成如上所述的凹形。可以在使基板10a变薄或脱层之后的任意时间点进行弯曲处理。以这种方式，完成了图1和图2所示的摄像装置1。
[作用和效果]
在上述摄像装置1中，从线源300发出的放射线进入波长转换层12，之后，波长转换层12输出光(例如，可见光)。之后，光进入各器件部11A，并接着由光电转换器(光电二极管PD)转换成电信号。从各器件部11A读取出电信号，将该电信号传输到配线基板10，之后输出到外部电路。这样就能够检测到作为电信号的放射线。
现在，图10示出了根据实施例的比较例(比较例1)的摄像装置100的构造以及线源300。根据比较例1的摄像装置100例如是用于胸部等的大型FPD，并包括非晶硅。摄像装置100整体呈平面形状。线源300布置在离摄像装置100的受光面距离d处。在被摄体处于线源300和摄像装置100之间的状态下进行摄影。
然而，为了保证预定距离d，在这样的摄像装置100中，在边缘S100处比中心处更容易出现灵敏度劣化和失真。
因此期望使整个装置弯曲，如同图11所示的比较例2的摄像装置101那样。因而，在形状弯曲的摄像装置101中，能够使得线源300和摄像装置101之间的距离d在中心和边缘处均相等，由此防止边缘处的灵敏度劣化。然而，在摄像装置101中，光电转换器连续布置在基板上，彼此之间没有间隔，这会因弯曲而导致失真，从而使器件部劣化，具体地，使包括开关器件的电路部劣化。
相比之下，在该实施例中，包括光电转换器的多个器件部11A在配线基板10上布置成整体上形成凹形。相比于布置成平面形状的器件部(比较例1)，这能够防止边缘处的灵敏度劣化。而且，将多个器件部11A彼此隔开地布置在配线基板10上更易于保持凹形。另外，弯曲应力得到缓和，使得能够减少发生失真。这样能够抑制器件部11A因失真所致的功能劣化。因此，能够抑制所得到图像的画质劣化。
此外，在该实施例中，光电转换器和开关器件(比如上述的地址开关SW1和开关SW2等)不形成于配线基板10上，而是形成于器件部11A中。换言之，在该实施例中，开关器件不形成于配线基板10中，而是以与光电转换器一起被切成片的状态布置在配线基板10上。因此，开关器件受弯曲的影响也很小，并且可抑制开关器件的劣化。这样能够抑制器件部11A的功能劣化，并且提高摄像装置1的可靠性。
而且，特别是对于比如胸部放射线照相等大型FPD应用，像素阵列部11的凹形的弯曲度为6度以上能够实现足够高的画质。现在，图12示出了离线源300的距离(mm)、摄像装置1(像素阵列部11)的弯曲度(°)和边缘的灵敏度(％)之间的关系。应当指出，假设像素阵列部的尺寸为4300mm×4300mm。在放射线照相中，认为在离线源2000mm处的光基本上平行，甚至在边缘处也可获得足够的灵敏度。而且，就天花板的高度和斜卧位置摄影时的操作性而言，指导原则指定距离为1000mm。
例如，在弯曲度为0度的情况下，即，在如比较例1所示像素阵列部呈平面形状的情况下，在离线源300距离2000mm处，最外边缘处的灵敏度大约为92％(92.3％)。这是理想的边缘灵敏度。现在，为了减小整个装置的尺寸或者通过减少辐射曝光的量来延长线源的寿命，期望将像素阵列部与线源之间的距离设置地尽量短。在将该距离减小到由指导原则指定的范围内的1000mm的情况下，认为光不是平行光，并且边缘灵敏度降低为70％，这导致灵敏度损失太大。
在此情况下，增大弯曲度，即，使得像素阵列部11呈凹形能够提高边缘灵敏度。具体地，在距离接近如指导原则所指定的1000mm的情况下，在弯曲度为6度以上时(图12中的A1部分)，可得到边缘灵敏度的理想值(92％以上)。因此，尤其是对于比如胸部放射线照相等大型FPD应用，像素阵列部11的凹形的弯曲度为6度以上能够抑制边缘灵敏度降低，由此可获得足够高的画质。
如上所述，在该实施例中，包括光电器件的多个器件部11A布置成整体上形成凹形，相比于将器件部11A布置成平面形状的情况，这能够抑制边缘处的灵敏度劣化。而且，将多个器件部11A在配线基板10上彼此隔开地布置更易于保持凹形，使得能够减少因弯曲应力所致的失真发生，这能防止器件部11A的功能劣化。这样能够防止所得到图像的画质劣化。
下面说明上述实施例的变形例。在下文中，与上述实施例中相似的元件用相同的附图标记表示，并且适当省略了这些元件的说明。
<变形例1>
图13示出了根据变形例1的摄像装置(摄像装置4)的功能构造。虽然上述实施例的说明中涉及像素阵列部11包括有源像素电路的构造，然而，在该变形例中，像素阵列部11包括所谓的无源像素电路。摄像装置4包括例如在基板410上的像素阵列部11和驱动像素阵列部11的驱动器。该驱动器包括例如行扫描器430、水平选择器440、列扫描器450和系统控制器460。
在像素阵列部11中，如同上述实施例，多个器件部11A以矩阵形式布置。在行方向上延伸的像素驱动线470和在列方向上延伸的垂直信号线480连接到器件部11A。各垂直信号线480发送用于从器件部11A读取信号的驱动信号。
行扫描器430包括移位寄存器、地址解码器等。行扫描器430是像素驱动器，像素驱动器例如以行为单位驱动像素阵列部11的各器件部11A。从行扫描器430所选择扫描的像素行中的各器件部11A输出的信号经由各垂直信号线480提供给水平选择器440。水平选择器440例如包括针对各垂直信号线480设置的放大器、水平选择开关等。
列扫描器450例如包括移位寄存器、地址解码器等，并且在扫描水平选择器440的水平选择开关时依次驱动各水平选择开关。列扫描器450所进行的这种选择和扫描使得经由各垂直信号线480发送的各单位像素P的信号被依次输出到水平信号线490。如此输出的信号经由水平信号线490发送到基板410的外部。
包括行扫描器430、水平选择器440、列扫描器450和水平信号线490的电路部可直接形成于基板410上，或者设置在外部控制IC中。可选择地，该电路部也可形成于通过电缆等连接的任何其它基板中。
系统控制器460接收从基板410外部所提供的时钟、关于操作模式指令的数据等，并且输出比如摄像装置4的内部信息等数据。并且，系统控制器460包括用于生成各种时序信号的时序发生器，并且系统控制器基于时序发生器生成的各种时序信号控制比如行扫描器430、水平选择器440和列扫描器450等外围电路的驱动。
图14示出了根据变形例1的像素阵列部11的电路构造。在该变形例中，器件部11A例如包括光电二极管PD、地址开关SW1和电容元件Cs。地址开关SW1连接到像素驱动线470，由构成行扫描器430一部分的垂直移位寄存器431进行开关控制。应当指出，图14还示出了构成水平选择器440一部分的放大器441和水平移位寄存器442。
在该变形例中，通过在各像素中切换地址开关SW1，累积在光电二极管PD中的电荷被发送至垂直信号线480。电荷被放大器441转换成电压，之后被读出到外部。
[应用例]
图15示出了根据应用例的摄像显示系统(摄像显示系统5)的功能构造的示例。摄像显示系统5例如包括具有上述像素阵列部11的摄像装置1、图像处理器6和显示装置7。图像处理器6对摄像装置1所获得的图像信号Dout进行预定的图像处理。显示装置7基于摄像装置4所获得的图像信号Dout显示图像，具体地，基于图像处理器6处理过的图像信号(显示信号D1)来显示图像。
在该实施例中，由摄像装置1检测线源300向被摄体400发出的放射线的穿过被摄体400的分量，以获得图像信号Dout。图像信号Dout被输入给图像处理器6，并且在图像处理器6中经过预定处理。经过图像处理的信号被输出至显示装置7，与该信号对应的图像在显示装置7的监视屏幕上被显示。
使用摄像装置1的摄像显示系统5优选用作例如摄影胸部、头部、腹部、膝盖等的x射线设备和计算机断层扫描(CT，Computed Tomography)设备。另外，摄像显示系统5也可以应用于牙科全景透视。而且，摄像显示系统5不但适用于医疗应用，而且适用于成份检测、行李检查等。
[变形例2]
图16示出了根据变形例2的显示装置(显示装置2)的具体构造示例。虽然上述实施例的说明涉及像素阵列部呈凹形的摄像装置的构造示例，但是这种构造的像素阵列部不但适用于摄像装置，而且适用于显示装置。
显示装置2例如包括具有多个显示像素(器件部21A)的像素阵列部21，多个显示像素以二维形式布置在配线基板20上。配线基板20在基板20a上包括多个配线层(配线层231)，基板20a例如包括玻璃、硅(Si)和有机树脂等。
多个器件部21A均包括比如发光二极管(LED)等发光器件，并且彼此隔开地布置(在器件部21A之间具有间隙)。多个器件部21A中的每一个都焊接在配线基板20上，并且电连接至配线基板20的配线层231。配线层231形成于绝缘膜22a上，并且埋在绝缘膜22b中。在配线层231上形成穿过绝缘膜22b的UBM 232，器件部21A隔着焊接层233形成于UBM 232上。形成有填埋层24来填充器件部21A之间的间隙。具有这种构造的显示装置2的像素阵列部21整体上呈如上所述的凹形。
在该变形例中，包括发光器件的多个器件部21A整体上形成凹形，并且彼此隔开地布置，这样更易于保持凹形，使得能够减少因弯曲应力所致的失真发生。这样能够抑制器件部因失真所致的功能劣化。因此，能够抑制所显示图像的画质劣化。
如上所述，虽然上文已参照一些实施例和变形例说明了本发明，但本发明并不局限于此，并且可以进行各种方式的变化。应当指出，这里所述的效果只是示例，也可以是其它效果，还可以进一步包括其它效果。
而且，例如，本发明可采用以下构造。
(1)一种摄像装置，其包括：
基板；以及
多个器件部，多个器件部各者包括光电转换器，所述多个器件部彼此隔开地布置在所述基板上，并且整体上形成凹形。
(2)根据(1)的摄像装置，其中，所述基板包括玻璃、硅(Si)或者有机树脂。
(3)根据(1)或(2)的摄像装置，其中，所述多个器件部中的每者都包括所述光电转换器和用于驱动所述光电转换器的一个以上的开关器件。
(4)根据(1)～(3)中任一项的摄像装置，其中，所述凹形的弯曲度为6度以上。
(5)根据(1)～(4)中任一项的摄像装置，其中，所述凹形从所述多个器件部的中心向边缘平缓弯曲。
(6)根据(1)～(5)中任一项的摄像装置，其中，所述凹形具有曲率。
(7)根据(1)～(6)中任一项的摄像装置，其中，所述基板呈弯曲形状，所述弯曲形状在所述器件部所处的一侧具有凹面。
(8)根据(7)的摄像装置，其中，所述多个器件部各自的凹形形成为比所述基板的所述弯曲形状更平缓。
(9)根据(1)～(8)中任一项的摄像装置，还包括：波长转换层，其形成于所述多个器件部上，并将入射的放射线转换成光。
(10)根据(9)的摄像装置，其中，所述波长转换层包括颗粒状闪烁体。
(11)根据(9)的摄像装置，其中，所述波长转换层包括柱状闪烁体。
(12)根据(1)～(11)中任一项的摄像装置，其中，所述波长转换层的凹形对应于所述多个器件部的凹形。
(13)根据(1)～(12)中任一项的摄像装置，还包括：填埋层，其形成于所述多个器件部之间的间隙中。
(14)根据(1)～(13)中任一项的摄像装置，其中，
所述基板包括多个配线层，并且
所述多个器件部中的每者都经由焊料电连接至所述配线层。
(15)一种摄像显示系统，其设有摄像装置，所述摄像装置包括：
基板；以及
多个器件部，多个器件部各者包括光电转换器，所述多个器件部彼此隔开地布置在所述基板上，并且整体上形成凹形。
(16)一种显示装置，其包括：
基板；以及
多个器件部，多个器件部各者包括发光器件，所述多个器件部彼此隔开地布置在所述基板上，并且整体上形成凹形。
本发明基于并要求在2016年2月22日向日本专利局提交的日本专利申请No.2016-31110的优先权，将该申请的全部内容通过引用并入此处。
本领域技术人员应当理解，根据设计需要及其它因素，可在所附权利要求或其等同物的范围内，进行各种修改、组合、子组合和替换。

Claims (16)

1.一种摄像装置，其包括：
基板；以及
多个器件部，所述多个器件部各者包括光电转换器，所述多个器件部彼此隔开地布置在所述基板上，并且整体上形成凹形。
2.根据权利要求1所述的摄像装置，其中，所述基板包括玻璃、硅(Si)或者有机树脂。
3.根据权利要求1所述的摄像装置，其中，所述多个器件部中的每者都包括所述光电转换器和用于驱动所述光电转换器的一个以上的开关器件。
4.根据权利要求1所述的摄像装置，其中，所述凹形的弯曲度为6度以上。
5.根据权利要求1所述的摄像装置，其中，所述凹形从所述多个器件部的中心向边缘平缓弯曲。
6.根据权利要求1所述的摄像装置，其中，所述凹形具有曲率。
7.根据权利要求1所述的摄像装置，其中，所述基板呈弯曲形状，所述弯曲形状在所述器件部所处的一侧具有凹面。
8.根据权利要求7所述的摄像装置，其中，所述多个器件部各自的凹形形成为比所述基板的所述弯曲形状更平缓。
9.根据权利要求1所述的摄像装置，还包括：波长转换层，其形成于所述多个器件部上，并将入射的放射线转换成光。
10.根据权利要求9所述的摄像装置，其中，所述波长转换层包括颗粒状闪烁体。
11.根据权利要求9所述的摄像装置，其中，所述波长转换层包括柱状闪烁体。
12.根据权利要求9所述的摄像装置，其中，所述波长转换层的凹形对应于所述多个器件部的凹形。
13.根据权利要求1所述的摄像装置，还包括：填埋层，其形成于所述多个器件部之间的间隙中。
14.根据权利要求1所述的摄像装置，其中，
所述基板包括多个配线层，并且
所述多个器件部中的每者都经由焊料电连接至所述配线层。
15.一种摄像显示系统，其设有摄像装置，所述摄像装置包括：
基板；以及
多个器件部，所述多个器件部各者包括光电转换器，所述多个器件部彼此隔开地布置在所述基板上，并且整体上形成凹形。
16.一种显示装置，其包括：
基板；以及
多个器件部，所述多个器件部各者包括发光器件，所述多个器件部彼此隔开地布置在所述基板上，并且整体上形成凹形。
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