CN108538917A - 具有电荷分布结构的开关装置 - Google Patents

具有电荷分布结构的开关装置 Download PDF

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Publication number
CN108538917A
CN108538917A CN201810176173.7A CN201810176173A CN108538917A CN 108538917 A CN108538917 A CN 108538917A CN 201810176173 A CN201810176173 A CN 201810176173A CN 108538917 A CN108538917 A CN 108538917A
Authority
CN
China
Prior art keywords
active layer
layer
distribution
charge
elongated member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810176173.7A
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English (en)
Chinese (zh)
Inventor
A·库迪莫夫
J·拉姆达尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/448,724 external-priority patent/US10192981B2/en
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of CN108538917A publication Critical patent/CN108538917A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201810176173.7A 2017-03-03 2018-03-02 具有电荷分布结构的开关装置 Pending CN108538917A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/448,724 US10192981B2 (en) 2012-06-29 2017-03-03 Switching device with charge distribution structure
US15/448,724 2017-03-03

Publications (1)

Publication Number Publication Date
CN108538917A true CN108538917A (zh) 2018-09-14

Family

ID=61563158

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810176173.7A Pending CN108538917A (zh) 2017-03-03 2018-03-02 具有电荷分布结构的开关装置

Country Status (4)

Country Link
EP (1) EP3370260A1 (https=)
JP (1) JP7154015B2 (https=)
CN (1) CN108538917A (https=)
TW (1) TWI756375B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112768358A (zh) * 2020-12-31 2021-05-07 扬州扬杰电子科技股份有限公司 一种氮化镓高电子迁移率晶体管及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250046345A (ko) * 2019-07-12 2025-04-02 파워 인티그레이션즈, 인크. 고 전자 이동도 트랜지스터의 고 전압 동작을 향상시키기 위한 정전용량 네트워크 및 그 방법
US11774296B2 (en) * 2021-11-11 2023-10-03 Alpha And Omega Semiconductor International Lp Method and circuit for sensing MOSFET temperature for load switch application

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119366A (ja) * 2009-12-01 2011-06-16 Nec Corp 半導体装置、電子装置、半導体装置の製造方法および使用方法
CN103178106A (zh) * 2011-12-21 2013-06-26 电力集成公司 用于异质结构的场效应晶体管的屏蔽罩
US20140001479A1 (en) * 2012-06-29 2014-01-02 Power Integrations, Inc. Switching device with charge distribution structure
WO2016100805A1 (en) * 2014-12-19 2016-06-23 Sensor Electronic Technology, Inc. Semiconductor device with multiple space-charge control electrodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034522A (ja) 2006-07-27 2008-02-14 Oki Electric Ind Co Ltd 電界効果トランジスタ
US9245879B2 (en) * 2012-06-29 2016-01-26 Power Integrations, Inc. Static discharge system
JP6270572B2 (ja) 2014-03-19 2018-01-31 株式会社東芝 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119366A (ja) * 2009-12-01 2011-06-16 Nec Corp 半導体装置、電子装置、半導体装置の製造方法および使用方法
CN103178106A (zh) * 2011-12-21 2013-06-26 电力集成公司 用于异质结构的场效应晶体管的屏蔽罩
US20140001479A1 (en) * 2012-06-29 2014-01-02 Power Integrations, Inc. Switching device with charge distribution structure
WO2016100805A1 (en) * 2014-12-19 2016-06-23 Sensor Electronic Technology, Inc. Semiconductor device with multiple space-charge control electrodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112768358A (zh) * 2020-12-31 2021-05-07 扬州扬杰电子科技股份有限公司 一种氮化镓高电子迁移率晶体管及其制备方法

Also Published As

Publication number Publication date
EP3370260A1 (en) 2018-09-05
TW201836149A (zh) 2018-10-01
JP7154015B2 (ja) 2022-10-17
TWI756375B (zh) 2022-03-01
JP2018152555A (ja) 2018-09-27

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Application publication date: 20180914

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