CN108493601A - 天线元件的制造方法 - Google Patents

天线元件的制造方法 Download PDF

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CN108493601A
CN108493601A CN201810378203.2A CN201810378203A CN108493601A CN 108493601 A CN108493601 A CN 108493601A CN 201810378203 A CN201810378203 A CN 201810378203A CN 108493601 A CN108493601 A CN 108493601A
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solder layer
coil component
manufacturing
antenna element
semiconductor substrate
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森本泰德
畑山佳之
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Sumida Corp
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Abstract

本发明提供一种天线元件的制造方法，该制造方法简单且造价低廉。具体而言，天线元件(10)是经过下述工序将线圈部件(11)和半导体基板(12)相连接而制成，即，在线圈部件(11)的连接端部(11a)与焊料层(14)相接触的状态下，相对于半导体基板(12)对线圈部件(11)进行布线的工序；通过对焊料层(14)加热使其熔化，能够将连接端部(11a)的一部分插入焊料层(14)，继而通过焊料层(14)将焊盘(12a)与线圈部件(11)电性连接的工序。

Description

天线元件的制造方法
本申请是申请号为201410378470.1、申请日为2014年08月01日、发明名称为天线元件的制造方法的申请的分案申请。
技术领域
本发明涉及一种天线元件的制造方法，尤其涉及一种将自天线用的线圈部件中引出的线材的连接部电性连接并固定到半导体基板的天线元件的制造方法。
背景技术
通常，关于例如进出车站用的IC卡、汽车或者住宅的遥控钥匙用的发射天线等IC芯片和绕组线圈一体化形成的天线元件，已知的有利用键合金线(bonding wire)将IC芯片和绕组线圈进行的连接。
专利文献1中记载了一种方法，该方法通过对外侧实施了绝缘涂层的导电线的顶端进行电弧放电形成一个球体，然后通过进行超声波振动，将该球体连接到半导体基板的焊盘上。
然而，在专利文献1所记载的发明中，绕组线圈的端部和半导体基板并没有直接连接，而是借助金线与引线框将绕组线圈连接到半导体基板。因此，造成部件数量多，从而导致组装所花费的制造成本变高，制造工时数增加。
现有技术文献
专利文献
专利文献1：日本专利申请公开公报特开昭63-208236号
发明内容
发明要解决的技术问题
此处，本发明是鉴于上述问题而完成的，本发明的目的在于提供一种天线元件的制造方法，该方法通过将绕组线圈的端部与半导体基板直接连接而完成，该制造方法简单且造价低廉。
解决技术问题的技术手段
本发明是为了实现上述的目的而提出的，本发明的实施方式为一种天线元件的制造方法，该天线元件具备线圈部件和半导体基板，该天线元件是经过下述工序而制成的：工序(A)，利用具有绝缘包覆层的线材形成所述线圈部件，并将线材两端部的绝缘包覆层除去的工序；工序(B)，在所述半导体基板的上表面，利用导电性金属形成连接区域，并进一步在所述连接区域的上表面形成焊料层的工序；工序(C)，在所述线圈部件的一部分与所述焊料层相接触的状态下，将所述线圈部件在所述连接区域上进行布线的工序；工序(D)，通过对所述焊料层加热使其熔化，将除去绝缘包覆层后的所述两端部插入至所述焊料层中，通过所述焊料层将所述连接区域与所述线圈部件进行电性连接的工序。
在所述实施方式中，所述线材优选利用聚氨酯或者聚酰亚胺所包覆的铜线。
此外，在所述实施方式中，优选所述焊料层的厚度为所述连接区域厚度的5倍以上20倍以下。
此外，在所述实施方式的所述工序(C)中，优选与所述焊料层相接触的所述线圈部件的所述一部分设置为相对于所述半导体基板的表面平行。
此外，在上述实施方式的上述工序(C)中，优选与所述焊料层相接触的所述线圈部件的所述一部分设置为相对于所述半导体基板表面倾斜。
发明效果
根据本发明，通过利用焊锡将除去绝缘包覆层的线圈部件的线材直接与半导体基板相连接，能够将铜线和焊锡结合所需的能量降低到最小限度，并且不需要键合金线，因此，能够期待生产性的提高以及价格优势的改善。
附图说明
图1所示的是应用本发明的制造方法，将所形成的半导体基板和线圈部件连接并固定而形成的天线元件的一个例子的概略图。
图2所示的是图1的A部分的扩大图，图2A所示的是其俯视图，图2B所示的是从图2A中箭头B所示的方向观察的侧视图，图2C所示的是图2B中C-C方向的剖视图，图2D所示的是线圈部件被连接并固定前的剖视图。
图3所示的是在本发明实施方式的天线元件的制造方法中，引出线连接器和天线元件的一部分的模式化图，图3A所示的是从线圈部件的剖面方向显示的天线元件图，图3B所示的是其侧视图。
图4所示的是本发明实施方式中，用于说明天线元件的制造方法的工序图。
图5所示的是说明本发明的天线元件的制造方法的一个变形例的图。
图6所示的是说明本发明的天线元件的制造方法的其它变形例的图。
具体实施方式
以下，参照附图对实施本发明的方式(以下，称作“实施方式”)进行详细说明。
图1所示的是应用本发明所述的制造方法制成的天线元件的一个例子的概略图。在该图中，天线元件10具备线圈部件11和半导体基板12。
所述线圈部件11是由线材13按照预定匝数进行缠绕所形成的线圈状的天线线圈，在其两端侧导出连接端部11a、11a作为连接部，分别用于与所述半导体基板12相连接。
所述半导体基板12为IC芯片，其上表面的一部分设置有作为连接区域的导电性端子，即焊盘12a、12a，该导电性端子由导电性金属形成。图2A至图2D表示的是图1中包含焊盘12a，12a中的一个A的部分的扩大图，其中，图2A是其俯视图，图2B是从图2A的箭头B的方向观察的侧视图，图2C是图2B的C-C方向的剖视图。如图2A至图2D所示，在该焊盘12a、12a上，通过焊料层14将线圈部件11的连接端部11a、11a的一部分的芯线15分别固定并电性连接。
此外，如图2D所示，形成所述线圈部件11的线材13是在具有导电性的铜线等芯线15的外周表面上，包覆了聚氨酯或者聚酰亚胺等绝缘包覆层16所成的线材。在缠绕好线圈部件11之后，对于包覆于其上的包覆层16，可以利用化学药品、紫外线、热、切割器、气体或者激光照射等方法除去，除去该绝缘包覆层16的芯线15能够被焊接在半导体基板12的焊盘12a、12a上。
图3A以及图3B示出了引出线连接器20、连接操作时的线圈部件11和半导体基板12的位置配置图。图3A是从线圈部件的剖面方向所示出的天线元件图，图3B是其侧视图。在图3A以及图3B中，其构造形成为，引出线连接器20形成于焊盘12a、12a的上表面，焊盘12a、12a是半导体基板12的连接区域，在对作为连结部的焊料层14进行激光照射时，对线材13施加张力T，用于将其拉伸到焊料层14的一侧，即焊盘12a的一侧，在其被施加张力T的状态下进行照射。这样，当对焊料层14进行激光照射时，焊料层14吸收激光发热而熔解。
另一方面，如上所述，所述线材13是在具有导电性的铜线等芯线15的外周表面上，包覆了聚氨酯或者聚酰亚胺等绝缘包覆层16而形成的线材，该绝缘包覆层16可以在焊接前，利用化学药品、紫外线、热、切割器、气体或者激光照射等方法将其除去。另外，在本实施方式中，芯线的直径例如可以在0.03mm～0.06mm的范围之间。
图4所示的是图1中示出的天线元件10的制造过程的一个例子的工序图。以下，利用图4按照从工序A到工序D的顺序对该制造过程进行说明，此处，工序A和工序B的先后顺序不受英文字母的顺序限定，两者之间的先后顺序可以交换。
首先为工序A，将线材13按照预定匝数卷绕成线圈状，并自其两侧端部朝同一方向分别导出连接端部11a、11a，并将该连接端部11a、11a的绝缘包覆层16除去而形成线圈部件11的工序。此外，当连接端部11a、11a导出时，优选使其从线圈部件11的下表面的一侧的位置水平地向线圈部件11的延伸方向的外侧导出，这样，连接端部11a、11a的厚度能够被线圈状部分的高度所吸收。
其次为工序B，通过导电性金属在半导体基板12的上表面形成焊盘(连接区域)12a，进一步在焊盘12a的上表面形成焊料层14的工序。此外，本实施例中，焊盘12a和焊料层14的结构形成为，焊盘12a的厚度为0.006mm，焊料层14的厚度在0.06～0.10mm之间，其中，焊料层14的厚度形成为焊盘12a的厚度的5倍以上20倍以下。
然后为工序C，将线圈部件11和半导体基板12组装至引出线连接器，如图3A及图3B所示，将自线圈部件11导出的连接端部11a、11a的一部分配置为与焊料层14相抵接，此时连接端部11a、11a的一部分与半导体基板12的焊盘(连接区域)12a的上表面处于平行状态。在该情况时，分别对线圈部件11的连接端部11a、11a施加向焊盘12a一侧的拉引力，即，连接端部11a、11a在分别被施加张力T的状态下，将该连接端部11a、11a配置到半导体基板12的焊盘12a上所设置的焊料层14上，然后，对焊料层14进行激光照射的工序。此外，图中符号t代表由焊料层向芯线15(线材13)一侧作用的反作用力。
最后为工序D，首先为工序D-1，如上所述，在施加张力T将线材13的连接端部11a拉向焊盘12a一侧的状态下，对焊料层14进行激光照射，焊料层14吸收激光而发热。接着，该热量开始熔解焊料层14的工序。
其次为工序D-2，在所述工序D-1中，对焊料层14持续照射激光时，通过将线材13的连接端部11a拉伸至焊盘12a一侧的张力T以及反作用力t，使得裸露出的芯线15没入焊料层14中，芯线15的外周形成被焊料层14包覆的状态。在此之后，对其停止激光照射，使焊料层14冷却固化，线材13的芯线15和焊盘12a的连接固定完成。
经过所述工序A～工序D的处理，能够在确保芯线15和焊料层14的导电性情况下进行连接并固定。由此，能够将芯线15、焊料层14以及焊盘12a之间进行可靠的连接和固定。
此外，焊料层14可以是易于吸收激光的任意材料，例如，纯锡材料，或者含锡的材料。
此外，激光可以是固体激光，气体激光，液体激光的任意一种，例如可以是由二氧化碳气体激光器，半导体激光器，准分子激光器，YAG激光器等所发出的激光。
并且，在本实施方式中，为了除去绝缘包覆层16而采用激光。在该情况下，对于线材13的绝缘包覆层16中直接被激光照射的部分，为了使得绝缘包覆层16易于剥落，线材13的绝缘包覆层16优选使用蓝色或者绿色的绝缘包覆层，但除此之外，也可以选择其它的颜色，例如乳白色。
此外，对将焊料层14涂布在焊盘12a上的设置进行了说明，焊料层14也可以设置为涂布在线材13的外周表面，还可以设置为在焊料层14和线材13上都进行涂布。
此外，对下述内容进行了说明，即为了将线材13拉伸至焊盘12a一侧，对线材13施加张力T，相反，也可以对焊盘12a施加张力T用于将焊盘12a拉伸至线材13一侧。
此外，在所述实施例中，已经对下述情况进行了说明，即，将自线圈部件11导出的连接端部11a、11a配置在焊盘(连接区域)12a的上表面，即，使连接端部11a、11a保持在与半导体基板12的上表面平行的状态下与焊料层14相抵接，在这种状态下对连接端部11a、11a上施加张力T进行连接，这种将连接端部11a配置为与焊盘12a的表面平行的状态下进行的熔融连接，连接端部11a和焊盘12a的接触面积，即，连接端部11a的一部分没入焊料层14的面积变大，连接能够更加切实可靠。
然而，也可以如图5以及图6中所示的那样，在自线圈部件11中导出的连接端部11a、11a相对于焊盘(连接区域)12a的上表面倾斜的状态下，即，在图5中，使其倾斜向后侧(线圈部件11)，在图6中，使其倾斜向前侧，然后分别与焊料层14的上表面相抵接，在该状态，可以对连接端部11a、11a施加张力T以使其能够很好的连接，在这种情况下，自线圈部件11中导出的连接端部11a、11a的位置自由度较高。
发明效果
基于上述实施方式，对本发明的效果进行说明，具体如下，即，本发明的所述实施方式是一种天线元件的制造方法，该天线元件具备线圈部件和半导体基板，其经过以下制造工序而制成：工序(A)，利用具有绝缘包覆层的线材形成所述线圈部件，并将线材两端部的绝缘包覆层除去的工序；工序(B)，在所述半导体基板的上表面，利用导电性金属形成连接区域，并进一步在所述连接区域的上表面上形成焊料层的工序；工序(C)，使所述线圈部件的一部分在与所述焊接层相接触的状态下，将所述线圈部件在所述连接区域上进行布线；工序(D)，通过对所述焊料层加热使其熔化，将除去绝缘包覆层后的所述两端部插入至所述焊料层中，通过所述焊料层将上述连接区域与所述线圈部件电性连接的工序。
在所述实施方式中，所述线材优选利用聚氨酯或者聚酰亚胺所包覆的铜线。这样，芯线材料使用铜线，并通过在其外侧包覆聚氨酯或者聚酰亚胺形成绝缘包覆层，通过对绝缘包覆层进行激光照射，可以简单地将绝缘包覆层熔化，绝缘包覆层易于剥落，能够切实可靠的实现芯线与连接区域的导通。
此外，在所述实施方式中，优选所述焊料层的厚度为所述连接区域厚度的5倍以上20倍以下。据此，线材的直径在0.03～0.06mm之间，焊盘的厚度约为0.006mm，焊料层的厚度约在0.06～0.10mm之间，这样，当焊料层熔化时，线材没入焊料层内部的部分能够变大，能够进行更切实可靠的连接和固定。此外，通过使焊料层变厚，线材的芯部不会与半导体基板以及连接区域相接触，能够减少芯部对半导体基板或连接区域造成损害。
此外，在所述实施方式的所述工序(C)中，优选与所述焊料层相接触的所述线圈部件的所述一部分设置为相对于所述半导体基板的表面平行。据此，能够将线圈部件的连接部配置为与半导体基板的表面平行，使连接部在焊料层中熔融连接时，线圈部件的连接部和半导体基板的连接区域(焊盘)的连接面积，即，连接部没入焊料层的面积会变大，使得连接能够更加切实可靠。进一步，能够降低线材的芯部与半导体基板以及连接区域相接触的危险。
此外，在所述实施方式的所述工序(C)中，优选与所述焊料层相接触的所述线圈部件的所述一部分设置为相对于所述半导体基板的表面倾斜。这样，自线圈部件导出的连接部的位置的自由度将会变高。
以上，利用实施方式对本发明进行了说明，但本发明的技术范围并不局限于上述实施方式所记载的范围。对于本领域技术人员显而易见的是，能够对上述实施方式施加各种改变或改良。另外，根据权利要求书的记载的范围显而易见的是，该施加各种改变或改良的实施方式也包含在本发明的技术范围内。
附图标记说明
10 天线元件
11 线圈部件(天线线圈)
11a 连接端部
12 半导体基板(IC芯片)
12a 焊盘(连接区域)
13 线材
14 焊料层
15 芯线
16 绝缘涂层
20 引出线连接器
T 张力
t 反作用力

Claims (6)

1.一种天线元件的制造方法，所述天线元件具备线圈部件和半导体基板，其特征在于制作过程具有下述工序：
工序(A)，利用具有绝缘包覆层的线材形成所述线圈部件，并将线材两端部的绝缘包覆层除去的工序；
工序(B)，在所述半导体基板的上表面，利用导电性金属形成连接区域，并进一步在所述连接区域的上表面形成焊料层的工序；
工序(C)，使所述线圈部件的一部分在与所述焊接层相接触的状态下，将所述线圈部件在所述连接区域上进行布线；
工序(D)，通过对所述焊料层加热使其熔化，将所述两端部插入至所述焊料层中，通过所述焊料层将所述连接区域与所述线圈部件进行电性连接的工序。
2.如权利要求1所述的天线元件的制造方法，其特征在于，
所述线材是利用聚氨酯或者聚酰亚胺所包覆的铜线。
3.如权利要求1所述的天线元件的制造方法，其特征在于，
所述焊料层的厚度形成为连接区域厚度的5倍以上20倍以下。
4.如权利要求2所述的天线元件的制造方法，其特征在于，
所述焊料层的厚度形成为连接区域厚度的5倍以上20倍以下。
5.如权利要求1至4任意一项所述的天线元件的制造方法，其特征在于，
在所述工序(C)中，将与所述焊料层接触的所述线圈部件的所述一部分设置为相对于所述半导体基板的表面平行。
6.如权利要求1至4任意一项所述的天线元件的制造方法，其特征在于，
在所述工序(C)中，将与所述焊料层接触的所述线圈部件的所述一部分设置为相对所述半导体基板的表面倾斜。
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Application publication date: 20180904