CN108476006B - 用于高温半导体加工中夹持的静电卡盘及其制造方法 - Google Patents
用于高温半导体加工中夹持的静电卡盘及其制造方法 Download PDFInfo
- Publication number
- CN108476006B CN108476006B CN201680074692.1A CN201680074692A CN108476006B CN 108476006 B CN108476006 B CN 108476006B CN 201680074692 A CN201680074692 A CN 201680074692A CN 108476006 B CN108476006 B CN 108476006B
- Authority
- CN
- China
- Prior art keywords
- layer
- plate
- plate layer
- electrostatic chuck
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/206—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/121—Metallic interlayers based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/68—Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562249559P | 2015-11-02 | 2015-11-02 | |
| US62/249,559 | 2015-11-02 | ||
| PCT/US2016/060169 WO2017079338A1 (en) | 2015-11-02 | 2016-11-02 | Electrostatic chuck for clamping in high temperature semiconductor processing and method of making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108476006A CN108476006A (zh) | 2018-08-31 |
| CN108476006B true CN108476006B (zh) | 2022-04-15 |
Family
ID=58662749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680074692.1A Active CN108476006B (zh) | 2015-11-02 | 2016-11-02 | 用于高温半导体加工中夹持的静电卡盘及其制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10593584B2 (enExample) |
| EP (1) | EP3371881B1 (enExample) |
| JP (2) | JP7240174B2 (enExample) |
| KR (1) | KR20180075667A (enExample) |
| CN (1) | CN108476006B (enExample) |
| WO (1) | WO2017079338A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108476006B (zh) | 2015-11-02 | 2022-04-15 | 沃特洛电气制造公司 | 用于高温半导体加工中夹持的静电卡盘及其制造方法 |
| EP3602603A4 (en) * | 2017-03-21 | 2020-12-30 | Component Re-Engineering Company Inc. | CERAMIC MATERIAL KIT FOR USE IN HIGHLY CORROSIVE OR EROSIVE SEMICONDUCTOR TREATMENT APPLICATIONS |
| KR102411272B1 (ko) * | 2018-03-26 | 2022-06-22 | 엔지케이 인슐레이터 엘티디 | 정전척 히터 |
| US10882130B2 (en) | 2018-04-17 | 2021-01-05 | Watlow Electric Manufacturing Company | Ceramic-aluminum assembly with bonding trenches |
| JP7378210B2 (ja) * | 2019-01-17 | 2023-11-13 | 新光電気工業株式会社 | セラミック部材の製造方法 |
| JP7341043B2 (ja) * | 2019-12-06 | 2023-09-08 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US11302557B2 (en) * | 2020-05-01 | 2022-04-12 | Applied Materials, Inc. | Electrostatic clamping system and method |
| CN113399858A (zh) * | 2021-04-25 | 2021-09-17 | 郑州机械研究所有限公司 | 一种钎焊用复合钎料及其制备方法和硬质合金刀具 |
| US20230230816A1 (en) * | 2022-01-19 | 2023-07-20 | Changxin Memory Technologies, Inc. | Semiconductor device, semiconductor equipment, and semiconductor process method |
| CN119501223B (zh) * | 2024-10-22 | 2025-09-23 | 君原电子科技(海宁)有限公司 | 一种用于静电卡盘的真空钎焊方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413360A (en) * | 1992-12-01 | 1995-05-09 | Kyocera Corporation | Electrostatic chuck |
| CN1227968A (zh) * | 1998-03-02 | 1999-09-08 | 住友电气工业株式会社 | 半导体制造装置的保持体及其制造方法 |
| CN2922118Y (zh) * | 2006-04-24 | 2007-07-11 | 北京中科信电子装备有限公司 | 一种用于晶片夹持的静电卡盘 |
| WO2013062833A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5600530A (en) * | 1992-08-04 | 1997-02-04 | The Morgan Crucible Company Plc | Electrostatic chuck |
| US5368220A (en) | 1992-08-04 | 1994-11-29 | Morgan Crucible Company Plc | Sealed conductive active alloy feedthroughs |
| JPH06291175A (ja) * | 1993-04-01 | 1994-10-18 | Kyocera Corp | 静電チャック |
| US5535090A (en) | 1994-03-03 | 1996-07-09 | Sherman; Arthur | Electrostatic chuck |
| JPH0870036A (ja) * | 1994-08-29 | 1996-03-12 | Souzou Kagaku:Kk | 静電チャック |
| JPH08227933A (ja) * | 1995-02-20 | 1996-09-03 | Shin Etsu Chem Co Ltd | 静電吸着機能を有するウエハ加熱装置 |
| US5671116A (en) * | 1995-03-10 | 1997-09-23 | Lam Research Corporation | Multilayered electrostatic chuck and method of manufacture thereof |
| JPH08279550A (ja) * | 1995-04-07 | 1996-10-22 | Souzou Kagaku:Kk | 静電チャック |
| JPH09172057A (ja) * | 1995-12-20 | 1997-06-30 | Souzou Kagaku:Kk | 静電チャック |
| JP3253002B2 (ja) | 1995-12-27 | 2002-02-04 | 東京エレクトロン株式会社 | 処理装置 |
| US6088213A (en) * | 1997-07-11 | 2000-07-11 | Applied Materials, Inc. | Bipolar electrostatic chuck and method of making same |
| EP1304717A4 (en) | 2000-07-27 | 2009-12-09 | Ebara Corp | FLOOR BEAM ANALYSIS APPARATUS |
| JP4493264B2 (ja) | 2001-11-26 | 2010-06-30 | 日本碍子株式会社 | 窒化アルミニウム質セラミックス、半導体製造用部材および耐蝕性部材 |
| JP2003264223A (ja) | 2002-03-08 | 2003-09-19 | Rasa Ind Ltd | 静電チャック部品および静電チャック装置およびその製造方法 |
| MY137585A (en) | 2003-03-19 | 2009-02-27 | Systems On Silicon Mfg Company Pte Ltd | A method of repairing a pedestal surface |
| JP2004349664A (ja) | 2003-05-23 | 2004-12-09 | Creative Technology:Kk | 静電チャック |
| US7595972B2 (en) * | 2004-04-09 | 2009-09-29 | Varian Semiconductor Equipment Associates, Inc. | Clamp for use in processing semiconductor workpieces |
| JP5019811B2 (ja) | 2006-07-20 | 2012-09-05 | 東京エレクトロン株式会社 | 静電吸着電極の補修方法 |
| JP5087561B2 (ja) | 2007-02-15 | 2012-12-05 | 株式会社クリエイティブ テクノロジー | 静電チャック |
| JP2011222931A (ja) * | 2009-12-28 | 2011-11-04 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
| US9624137B2 (en) | 2011-11-30 | 2017-04-18 | Component Re-Engineering Company, Inc. | Low temperature method for hermetically joining non-diffusing ceramic materials |
| US8932690B2 (en) * | 2011-11-30 | 2015-01-13 | Component Re-Engineering Company, Inc. | Plate and shaft device |
| US8684256B2 (en) * | 2011-11-30 | 2014-04-01 | Component Re-Engineering Company, Inc. | Method for hermetically joining plate and shaft devices including ceramic materials used in semiconductor processing |
| KR102304432B1 (ko) | 2012-09-19 | 2021-09-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판들을 접합하기 위한 방법들 |
| EP2960933B1 (en) * | 2013-02-25 | 2017-12-06 | Kyocera Corporation | Sample holding tool |
| CN108476006B (zh) | 2015-11-02 | 2022-04-15 | 沃特洛电气制造公司 | 用于高温半导体加工中夹持的静电卡盘及其制造方法 |
| TWI595220B (zh) * | 2016-02-05 | 2017-08-11 | 群創光電股份有限公司 | 壓力感測裝置及其製造方法 |
-
2016
- 2016-11-02 CN CN201680074692.1A patent/CN108476006B/zh active Active
- 2016-11-02 US US15/341,843 patent/US10593584B2/en active Active
- 2016-11-02 WO PCT/US2016/060169 patent/WO2017079338A1/en not_active Ceased
- 2016-11-02 EP EP16862905.3A patent/EP3371881B1/en active Active
- 2016-11-02 KR KR1020187015747A patent/KR20180075667A/ko not_active Ceased
- 2016-11-02 JP JP2018543028A patent/JP7240174B2/ja active Active
-
2020
- 2020-03-13 US US16/817,627 patent/US11222804B2/en active Active
-
2021
- 2021-12-10 JP JP2021200897A patent/JP7504857B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413360A (en) * | 1992-12-01 | 1995-05-09 | Kyocera Corporation | Electrostatic chuck |
| CN1227968A (zh) * | 1998-03-02 | 1999-09-08 | 住友电气工业株式会社 | 半导体制造装置的保持体及其制造方法 |
| CN2922118Y (zh) * | 2006-04-24 | 2007-07-11 | 北京中科信电子装备有限公司 | 一种用于晶片夹持的静电卡盘 |
| WO2013062833A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108476006A (zh) | 2018-08-31 |
| US10593584B2 (en) | 2020-03-17 |
| KR20180075667A (ko) | 2018-07-04 |
| US20200357676A1 (en) | 2020-11-12 |
| US20170263486A1 (en) | 2017-09-14 |
| EP3371881A4 (en) | 2019-05-15 |
| JP2018537002A (ja) | 2018-12-13 |
| EP3371881B1 (en) | 2023-02-15 |
| EP3371881A1 (en) | 2018-09-12 |
| JP2022050408A (ja) | 2022-03-30 |
| WO2017079338A1 (en) | 2017-05-11 |
| JP7240174B2 (ja) | 2023-03-15 |
| JP7504857B2 (ja) | 2024-06-24 |
| US11222804B2 (en) | 2022-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108476006B (zh) | 用于高温半导体加工中夹持的静电卡盘及其制造方法 | |
| JP6383382B2 (ja) | 加熱器プレートおよび/または静電チャックを製造する方法およびこれに関連するデバイス | |
| US6503368B1 (en) | Substrate support having bonded sections and method | |
| KR102555798B1 (ko) | 반도체 프로세싱에서 사용되는 장비 피스를 수리하기 위한 방법 | |
| KR102848997B1 (ko) | 고내열성 니켈 합금 조인트들을 갖는 반도체 프로세싱 장비 및 이를 제조하기 위한 방법 | |
| CN104823274A (zh) | 具有金属接合保护层的基板支撑组件 | |
| JP2005317749A (ja) | 半導体製造装置用保持体及びそれを搭載した半導体製造装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210531 Address after: Missouri, USA Applicant after: WATLOW ELECTRIC MANUFACTURING Co. Address before: California, USA Applicant before: COMPONENT RE-ENGINEERING Co.,Inc. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |