CN108427469A - The reference voltage circuit with compensation circuit of power module - Google Patents
The reference voltage circuit with compensation circuit of power module Download PDFInfo
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- CN108427469A CN108427469A CN201810402368.9A CN201810402368A CN108427469A CN 108427469 A CN108427469 A CN 108427469A CN 201810402368 A CN201810402368 A CN 201810402368A CN 108427469 A CN108427469 A CN 108427469A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The present invention relates to the reference voltage circuits with compensation circuit of power technique fields, especially power module.It includes start-up circuit and reference voltage generating circuit.The present invention compensates circuit on the basis of traditional benchmark potential circuit, by increase, reduces the temperature coefficient of output voltage, and have higher power supply rejection ratio.The present invention also provides a kind of power module, the AC conversion that can be used for input exports for steady dc voltage.
Description
Technical field
The present invention relates to Analogical Circuit Technique field more particularly to the benchmark electricity with compensation circuit of power module
Volt circuit.
Background technology
Reference voltage generating circuit is the basic mould in Analog Circuit Design, mixed-signal circuit design and Digital Design
Module unit, its effect are to provide a reference voltage not changed with temperature and supply voltage for system.It is produced in reference voltage
In raw circuit, temperature coefficient（TC, Temperature Coefficient）And power supply rejection ratio（PSRR, Power Supply
Rejection Ratio）The two parameters play conclusive effect, high-precision, low-power consumption, high electricity to the quality of power source performance
Source inhibits most important for entire circuit than, the reference voltage generating circuit of low-temperature coefficient.Traditional band-gap reference
Voltage by two voltages with Positive and Negative Coefficient Temperature by carrying out the reference voltage that linear superposition can be obtained zero-temperature coefficient.
The difference of the base emitter voltage of two double pole triodes is and absolute temperature is proportional to, the base stage-of bipolar transistor
Emitter voltage has negative temperature coefficient property, using both voltages of different nature with obtaining in certain proportion and temperature
Change unrelated reference voltage.Since traditional reference voltage generating circuit only carries out linear compensation, low precision, in temperature range
When changing greatly, the voltage of generation is usually not satisfactory, especially in some require relatively high circuit to voltage accuracy, line
Property compensation after the voltage that generates far can not meet the requirements.Based on this, the present invention provides one kind having higher precision, higher
The low-temperature coefficient reference voltage generating circuit of PSRR.In addition, the present invention also provides a kind of power module, can be used for input
AC conversion exports for steady dc voltage.
Invention content
That the purpose of the present invention is to solve existing reference voltage generating circuit power supply rejection ratio is low, temperature coefficient is big asks
Topic, provide a kind of higher precision, high PSRR and low-temperature coefficient reference voltage circuit and power module.
The present invention provides a kind of reference voltage circuits with compensation circuit, including start-up circuit and reference voltage to generate
Circuit；The start-up circuit includes：12nd metal-oxide-semiconductor M12, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14, the 15th MOS
The pipe capacitance of M15, the 16th metal-oxide-semiconductor M16, second C2, the 17th metal-oxide-semiconductor M17；Wherein, the 17th metal-oxide-semiconductor M17, the 12nd MOS
The source electrode of pipe M12 connects voltage, the grounded-grid of the 17th metal-oxide-semiconductor M17, the drain electrode connection the tenth of the 17th metal-oxide-semiconductor M17
The drain electrode of three metal-oxide-semiconductor M13 and the grid of the 15th metal-oxide-semiconductor M15, the source electrode ground connection of the 13rd metal-oxide-semiconductor M13, the 12nd metal-oxide-semiconductor
The grid of M12 connects first end, the drain electrode of the 15th metal-oxide-semiconductor M15 and the grid of the 16th metal-oxide-semiconductor M16 of the second capacitance C2,
The second end of second capacitance C2 connects voltage, the 12nd metal-oxide-semiconductor M12 drain electrode connection the 14th metal-oxide-semiconductor M14 drain electrode and company
The grid of the 14th metal-oxide-semiconductor M14 and the grid of the 13rd metal-oxide-semiconductor M13 are connect, the source electrode of the 14th metal-oxide-semiconductor M14 is grounded, and the tenth
The source electrode of five metal-oxide-semiconductor M15 is grounded, and the source electrode of the 16th metal-oxide-semiconductor M16 connects voltage, the drain electrode conduct of the 16th metal-oxide-semiconductor M16
The output of start-up circuit.The reference voltage generating circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3,
4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9, the tenth
Metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance
R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the first capacitance C1, the first triode Q1, the second triode Q2, third
Triode Q3；Wherein, the output end of the source electrode connection start-up circuit of the first metal-oxide-semiconductor M1, third metal-oxide-semiconductor M3, the 5th metal-oxide-semiconductor M5 is
The drain electrode of 16th metal-oxide-semiconductor M16, the drain electrode of the first metal-oxide-semiconductor M1 of grid connection of the first metal-oxide-semiconductor M1, the source electrode of the second metal-oxide-semiconductor M2
And the grid of third metal-oxide-semiconductor M3 and the 5th metal-oxide-semiconductor M5, the grid of the second metal-oxide-semiconductor M2 connect the 4th metal-oxide-semiconductor M4, the 6th metal-oxide-semiconductor
The grid of M6, the source electrode of the 4th metal-oxide-semiconductor M4 of drain electrode connection of third metal-oxide-semiconductor M3, the drain electrode of the 5th metal-oxide-semiconductor M5 connect the 6th MOS
The source electrode of pipe M6, the first end of the drain electrode connection first resistor R1 of the second metal-oxide-semiconductor M2, the second end ground connection of first resistor R1, the
The 7th metal-oxide-semiconductor M7 of drain electrode connection of four metal-oxide-semiconductor M4, the source electrode of the 8th metal-oxide-semiconductor M8, the leakage of the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8
Pole is separately connected the drain electrode of the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 source electrode ground connection,
9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 grid be connected and connect the drain electrode of the 9th metal-oxide-semiconductor M9, the grid of the 7th metal-oxide-semiconductor M7 connects
Connect the first end of the first end and the 6th resistance R6 of second resistance R2, the of the second end connection 3rd resistor R3 of second resistance R2
The second end of the first end of one end and the 4th resistance R4,3rd resistor R3 connects drain electrode and the third transistor of the 6th metal-oxide-semiconductor M6
The collector of Q3, the emitter of the grid and the first triode Q1 of the 8th metal-oxide-semiconductor M8 of second end connection of the 4th resistance R4, first
The collector and base earth of triode Q1, the base stage and the 7th resistance of the second end connection third transistor Q3 of the 6th resistance R6
The first end of R7, the second end of the 7th resistance R7 connect the emitter of the second triode Q2, the collector of the second triode Q2 and
Base earth, the first end of the 8th resistance R8 of emitter connection resistance of third transistor Q3, the second of the 8th resistance R8 of resistance
The grid of end ground connection, the 11st metal-oxide-semiconductor M11 connects drain electrode and the first end of the 5th resistance R5 of the 8th metal-oxide-semiconductor M8, the 5th resistance
The second end of R5 connects the first end of the first capacitance C1, the second end of the first capacitance C1 connect the 11st metal-oxide-semiconductor M11 drain electrode and
The drain electrode of 6th metal-oxide-semiconductor M6, the source electrode ground connection of the 11st metal-oxide-semiconductor M11, the drain voltage of the 6th metal-oxide-semiconductor M6As output electricity
Pressure.The first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor
M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 17th metal-oxide-semiconductor M17, the 12nd metal-oxide-semiconductor M12, the 16th metal-oxide-semiconductor M16 are PMOS
Pipe, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14,
15th metal-oxide-semiconductor M15 is NMOS tube.The first triode Q1, the second triode Q2 are PNP pipe, the third transistor Q3
It is managed for NPN.
When circuit start, due to the grounded-grid of the 11st metal-oxide-semiconductor M11, be directly connected, therefore the 15th metal-oxide-semiconductor
The grid voltage of M15 increases, and to the 15th metal-oxide-semiconductor M15 and the 16th metal-oxide-semiconductor M16 conductings, circuit starts to work normally.This
When the 12nd metal-oxide-semiconductor M12 grid voltage be pulled low to low level, the 12nd metal-oxide-semiconductor M12 conductings, to the 13rd metal-oxide-semiconductor
The grid voltage rising of M13, the 14th metal-oxide-semiconductor M14, the 13rd metal-oxide-semiconductor M13 and the 14th metal-oxide-semiconductor M14 conductings；Due to the tenth
The partial pressure of three metal-oxide-semiconductor M13 acts on, and the grid voltage of the 15th metal-oxide-semiconductor M15 slowly declines, by the way that two metal-oxide-semiconductors are rationally arranged
The voltage when grid of breadth length ratio, the 15th metal-oxide-semiconductor M15 of control is stablized is less than the cut-in voltage of the 15th metal-oxide-semiconductor M15, to
15th metal-oxide-semiconductor M15 shutdowns, start-up circuit are closed, reference voltage generating circuit normal work.First metal-oxide-semiconductor M1, the 2nd MOS
Pipe M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6 constitute three road current mirrors, the three or three pole
Pipe Q3 and the 8th resistance R8 constitutes compensation circuit, the base voltage of third transistor Q3 can by the ratio of reasonable disposition resistance into
Row control.When temperature is raised, the electric current for flowing through the collector and emitter of third transistor Q3 increases, the 8th upper ends resistance R8
Voltage raising makes base voltage be influenced by the second triode Q2 negative temperature coefficients and reduces, and base current is caused to reduce so that
Collector current increases and partial offset that increased part is reduced by base current with temperature, and the first capacitance C1 is arranged can be into one
Step stabilizes the output voltage。
The present invention also provides a kind of power module, the power module includes a kind of base with compensation circuit
Quasi- potential circuit, further includes rectification circuit, filter circuit, and the rectification circuit connects filter circuit, the filter electricity
Road connects reference voltage circuit, the reference voltage circuit connection load, and the rectification circuit is used to input in alternating current and convert
For direct current, the filter circuit is used to remove the ripple and noise in DC voltage, so as to be provided more for load
Stable output voltage.
A kind of reference voltage circuit and power module with compensation circuit provided by the present invention, efficiently solve existing
There is the problem that reference voltage generating circuit low precision, temperature coefficient are high in technology, on the basis of traditional benchmark potential circuit, leads to
Increase compensation circuit is crossed, reduces the temperature coefficient of output voltage, and there is higher power supply rejection ratio.It is provided by the invention
A kind of power module can be used for exporting input AC electrotransformation for steady dc voltage.
Description of the drawings
Fig. 1 is a kind of reference voltage circuit schematic diagram with compensation circuit provided by the invention.
Fig. 2 is that a kind of temperature characterisitic of reference voltage circuit output voltage with compensation circuit provided by the invention is bent
Line.
Fig. 3 is a kind of structural schematic diagram of power module provided by the invention.
Specific implementation mode
The present invention provides a kind of reference voltage circuits and power module with compensation circuit, to make the mesh of the present invention
, technical solution and advantage it is clearer, clear, the present invention is described in more detail for the embodiment that develops simultaneously referring to the drawings.
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
As shown in fig. 1, a kind of reference voltage circuit with compensation circuit, including start-up circuit and reference voltage generate electricity
Road；The start-up circuit includes：12nd metal-oxide-semiconductor M12, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14, the 15th metal-oxide-semiconductor
M15, the 16th metal-oxide-semiconductor M16, the second capacitance C2, the 17th metal-oxide-semiconductor M17；Wherein, the 17th metal-oxide-semiconductor M17, the 12nd metal-oxide-semiconductor
The source electrode of M12 connects voltage, and the drain electrode of the grounded-grid of the 17th metal-oxide-semiconductor M17, the 17th metal-oxide-semiconductor M17 connects the 13rd MOS
The grid of the drain electrode of pipe M13 and the 15th metal-oxide-semiconductor M15, the source electrode ground connection of the 13rd metal-oxide-semiconductor M13, the 12nd metal-oxide-semiconductor M12's
First end, the drain electrode of the 15th metal-oxide-semiconductor M15 and the grid of the 16th metal-oxide-semiconductor M16 of the second capacitance C2 of grid connection, second
The second end of capacitance C2 connects voltage, the drain electrode of the 14th metal-oxide-semiconductor M14 of drain electrode connection of the 12nd metal-oxide-semiconductor M12 simultaneously connects the
The grid of 14 metal-oxide-semiconductor M14 and the grid of the 13rd metal-oxide-semiconductor M13, the source electrode ground connection of the 14th metal-oxide-semiconductor M14, the 15th MOS
The source electrode of pipe M15 is grounded, and the source electrode of the 16th metal-oxide-semiconductor M16 connects voltage, the drain electrode of the 16th metal-oxide-semiconductor M16 is as startup
The output of circuit.The reference voltage generating circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3, the 4th
Metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor
M10, the 11st metal-oxide-semiconductor M11, first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the
The six resistance capacitance of R6, the 7th resistance R7, the 8th resistance R8, first C1, the first triode Q1, the second triode Q2, the three or three pole
Pipe Q3；Wherein, output end i.e. the tenth of the source electrode connection start-up circuit of the first metal-oxide-semiconductor M1, third metal-oxide-semiconductor M3, the 5th metal-oxide-semiconductor M5
The drain electrode of six metal-oxide-semiconductor M16, the grid of the first metal-oxide-semiconductor M1 connect the drain electrode of the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 source electrode and
The grid of third metal-oxide-semiconductor M3 and the 5th metal-oxide-semiconductor M5, the grid of the second metal-oxide-semiconductor M2 connect the 4th metal-oxide-semiconductor M4, the 6th metal-oxide-semiconductor M6
Grid, the source electrode of the 4th metal-oxide-semiconductor M4 of drain electrode connection of third metal-oxide-semiconductor M3, the drain electrode of the 5th metal-oxide-semiconductor M5 connect the 6th metal-oxide-semiconductor M6
Source electrode, the first end of the drain electrode connection first resistor R1 of the second metal-oxide-semiconductor M2, the second end ground connection of first resistor R1, the 4th MOS
The 7th metal-oxide-semiconductor M7 of drain electrode connection of pipe M4, the source electrode of the 8th metal-oxide-semiconductor M8, the drain electrode of the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8 are distinguished
Connect the drain electrode of the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 source electrode ground connection, the 9th MOS
Pipe M9, the tenth metal-oxide-semiconductor M10 grid be connected and connect the drain electrode of the 9th metal-oxide-semiconductor M9, the grid connection second of the 7th metal-oxide-semiconductor M7
The first end of the first end of resistance R2 and the 6th resistance R6, the first end of the second end connection 3rd resistor R3 of second resistance R2 and
The first end of 4th resistance R4, the second end of 3rd resistor R3 connect the collection of the drain electrode and third transistor Q3 of the 6th metal-oxide-semiconductor M6
Electrode, the second end of the 4th resistance R4 connect the emitter of the grid and the first triode Q1 of the 8th metal-oxide-semiconductor M8, the first triode
The of the collector and base earth of Q1, the base stage of the second end connection third transistor Q3 of the 6th resistance R6 and the 7th resistance R7
One end, the second end of the 7th resistance R7 connect the emitter of the second triode Q2, and the collector and base stage of the second triode Q2 connect
Ground, the first end of the 8th resistance R8 of emitter connection resistance of third transistor Q3, the second end ground connection of the 8th resistance R8 of resistance,
The grid of 11st metal-oxide-semiconductor M11 connects drain electrode and the first end of the 5th resistance R5 of the 8th metal-oxide-semiconductor M8, and the of the 5th resistance R5
Two ends connect the first end of the first capacitance C1, and the second end of the first capacitance C1 connects the drain electrode and the 6th of the 11st metal-oxide-semiconductor M11
The drain electrode of metal-oxide-semiconductor M6, the source electrode ground connection of the 11st metal-oxide-semiconductor M11, the drain voltage of the 6th metal-oxide-semiconductor M6As output voltage.
The first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6,
7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 17th metal-oxide-semiconductor M17, the 12nd metal-oxide-semiconductor M12, the 16th metal-oxide-semiconductor M16 are PMOS tube,
The 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14,
15 metal-oxide-semiconductor M15 are NMOS tube.The first triode Q1, the second triode Q2 are PNP pipe, and the third transistor Q3 is
NPN is managed.
When circuit start, due to the grounded-grid of the 11st metal-oxide-semiconductor M11, be directly connected, therefore the 15th metal-oxide-semiconductor
The grid voltage of M15 increases, and to the 15th metal-oxide-semiconductor M15 and the 16th metal-oxide-semiconductor M16 conductings, circuit starts to work normally.This
When the 12nd metal-oxide-semiconductor M12 grid voltage be pulled low to low level, the 12nd metal-oxide-semiconductor M12 conductings, to the 13rd metal-oxide-semiconductor
The grid voltage rising of M13, the 14th metal-oxide-semiconductor M14, the 13rd metal-oxide-semiconductor M13 and the 14th metal-oxide-semiconductor M14 conductings；Due to the tenth
The partial pressure of three metal-oxide-semiconductor M13 acts on, and the grid voltage of the 15th metal-oxide-semiconductor M15 slowly declines, by the way that two metal-oxide-semiconductors are rationally arranged
The voltage when grid of breadth length ratio, the 15th metal-oxide-semiconductor M15 of control is stablized is less than the cut-in voltage of the 15th metal-oxide-semiconductor M15, to
15th metal-oxide-semiconductor M15 shutdowns, start-up circuit are closed, reference voltage generating circuit normal work.First metal-oxide-semiconductor M1, the 2nd MOS
Pipe M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6 constitute three road current mirrors, the three or three pole
Pipe Q3 and the 8th resistance R8 constitutes compensation circuit, the base voltage of third transistor Q3 can by the ratio of reasonable disposition resistance into
Row control.When temperature is raised, the electric current for flowing through the collector and emitter of third transistor Q3 increases, the 8th upper ends resistance R8
Voltage raising makes base voltage be influenced by the second triode Q2 negative temperature coefficients and reduces, and base current is caused to reduce so that
Collector current increases and partial offset that increased part is reduced by base current with temperature, and the first capacitance C1 is arranged can be into one
Step stabilizes the output voltage。
Simulation result shows that there is reference voltage generating circuit of the invention lower temperature coefficient and higher power supply to press down
Ratio processed, wherein the temperature characteristics of output voltage is as shown in Figure 2.
As shown in figure 3, the present invention also provides a kind of power module, the power module includes that described one kind carrying benefit
The reference voltage circuit for repaying circuit, further includes rectification circuit, filter circuit, and the rectification circuit connects filter circuit, institute
Filter circuit connection reference voltage circuit is stated, the reference voltage circuit connection load, the rectification circuit will be for that will exchange
Electricity input is converted into direct current, and the filter circuit is used to remove the ripple and noise in DC voltage, so as to be negative
It carries and more stable output voltage is provided.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect range.
Claims (1)
1. a kind of working method of the reference voltage circuit with compensation circuit, the reference voltage circuit includes start-up circuit
And reference voltage generating circuit；It is characterized in that, the start-up circuit includes：12nd metal-oxide-semiconductor M12, the 13rd metal-oxide-semiconductor M13,
14th metal-oxide-semiconductor M14, the 15th metal-oxide-semiconductor M15, the 16th metal-oxide-semiconductor M16, the second capacitance C2, the 17th metal-oxide-semiconductor M17；Wherein,
The source electrode connection voltage of 17th metal-oxide-semiconductor M17, the 12nd metal-oxide-semiconductor M12, the grounded-grid of the 17th metal-oxide-semiconductor M17, the 17th
The drain electrode of the 13rd metal-oxide-semiconductor M13 of drain electrode connection of metal-oxide-semiconductor M17 and the grid of the 15th metal-oxide-semiconductor M15, the 13rd metal-oxide-semiconductor M13
Source electrode ground connection, the grid of the 12nd metal-oxide-semiconductor M12 connect the first end of the second capacitance C2, the 15th metal-oxide-semiconductor M15 drain electrode with
And the 16th metal-oxide-semiconductor M16 grid, the second end of the second capacitance C2 connects voltage, the drain electrode connection of the 12nd metal-oxide-semiconductor M12
The drain electrode of 14th metal-oxide-semiconductor M14 simultaneously connects the grid of the 14th metal-oxide-semiconductor M14 and the grid of the 13rd metal-oxide-semiconductor M13, and the 14th
The source electrode of metal-oxide-semiconductor M14 is grounded, and the source electrode ground connection of the 15th metal-oxide-semiconductor M15, the source electrode of the 16th metal-oxide-semiconductor M16 connects voltage,
Output of the drain electrode of 16th metal-oxide-semiconductor M16 as start-up circuit；The reference voltage generating circuit includes：First metal-oxide-semiconductor M1,
Second metal-oxide-semiconductor M2, third metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th
Metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, first resistor R1, second resistance R2, third electricity
Hinder the capacitance of R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, first C1, the one or three
Pole pipe Q1, the second triode Q2, third transistor Q3；Wherein, the source of the first metal-oxide-semiconductor M1, third metal-oxide-semiconductor M3, the 5th metal-oxide-semiconductor M5
Pole connects the output end i.e. drain electrode of the 16th metal-oxide-semiconductor M16 of start-up circuit, and the grid of the first metal-oxide-semiconductor M1 connects the first metal-oxide-semiconductor M1
Drain electrode, the source electrode of the second metal-oxide-semiconductor M2 and the grid of third metal-oxide-semiconductor M3 and the 5th metal-oxide-semiconductor M5, the grid of the second metal-oxide-semiconductor M2
The grid of the 4th metal-oxide-semiconductor M4, the 6th metal-oxide-semiconductor M6 are connected, draining for third metal-oxide-semiconductor M3 connects the source electrode of the 4th metal-oxide-semiconductor M4, and the 5th
The source electrode of the 6th metal-oxide-semiconductor M6 of drain electrode connection of metal-oxide-semiconductor M5, the first end of the drain electrode connection first resistor R1 of the second metal-oxide-semiconductor M2, the
The second end of one resistance R1 is grounded, the 7th metal-oxide-semiconductor M7 of drain electrode connection of the 4th metal-oxide-semiconductor M4, the source electrode of the 8th metal-oxide-semiconductor M8, and the 7th
The drain electrode of metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8 are separately connected the drain electrode of the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10, the 9th metal-oxide-semiconductor M9,
The source electrode of tenth metal-oxide-semiconductor M10 is grounded, the 9th metal-oxide-semiconductor M9, the tenth metal-oxide-semiconductor M10 grid be connected and connect the 9th metal-oxide-semiconductor M9's
Drain electrode, the first end of the first end and the 6th resistance R6 of the grid connection second resistance R2 of the 7th metal-oxide-semiconductor M7, second resistance R2's
Second end connects the first end of the first end and the 4th resistance R4 of 3rd resistor R3, the second end connection the 6th of 3rd resistor R3
The collector of the drain electrode and third transistor Q3 of metal-oxide-semiconductor M6, the second end of the 4th resistance R4 connect the 8th metal-oxide-semiconductor M8 grid and
The emitter of first triode Q1, the collector and base earth of the first triode Q1, the second end connection the of the 6th resistance R6
The first end of the base stage and the 7th resistance R7 of three triode Q3, the second end of the 7th resistance R7 connect the transmitting of the second triode Q2
Pole, the collector and base earth of the second triode Q2, the of emitter connection resistance the 8th resistance R8 of third transistor Q3
One end, the second end ground connection of the 8th resistance R8 of resistance, the grid of the 11st metal-oxide-semiconductor M11 connect the drain electrode and the of the 8th metal-oxide-semiconductor M8
The first end of five resistance R5, the second end of the 5th resistance R5 connect the first end of the first capacitance C1, the second end of the first capacitance C1
Connect the drain electrode of the 11st metal-oxide-semiconductor M11 and the drain electrode of the 6th metal-oxide-semiconductor M6, the source electrode ground connection of the 11st metal-oxide-semiconductor M11, the 6th MOS
The drain voltage of pipe M6As output voltage；
The working method, including：When circuit start, due to the grounded-grid of the 11st metal-oxide-semiconductor M11, be directly connected,
Therefore the grid voltage of the 15th metal-oxide-semiconductor M15 increases, to the 15th metal-oxide-semiconductor M15 and the 16th metal-oxide-semiconductor M16 conductings, circuit
Start to work normally.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810402368.9A CN108427469A (en) | 2017-05-09 | 2017-05-09 | The reference voltage circuit with compensation circuit of power module |
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| CN201810402368.9A CN108427469A (en) | 2017-05-09 | 2017-05-09 | The reference voltage circuit with compensation circuit of power module |
| CN201710322269.5A CN106959722B (en) | 2017-05-09 | 2017-05-09 | A kind of reference voltage circuit and power module with compensation circuit |
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| CN201710322269.5A Division CN106959722B (en) | 2017-05-09 | 2017-05-09 | A kind of reference voltage circuit and power module with compensation circuit |
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| CN201810402368.9A Withdrawn CN108427469A (en) | 2017-05-09 | 2017-05-09 | The reference voltage circuit with compensation circuit of power module |
| CN201711161314.XA Pending CN107894805A (en) | 2017-05-09 | 2017-05-09 | A kind of power module for including reference voltage circuit |
| CN201810403990.1A Withdrawn CN108491022A (en) | 2017-05-09 | 2017-05-09 | Power module and working method based on compensation circuit, filter circuit |
| CN201810402370.6A Pending CN108427470A (en) | 2017-05-09 | 2017-05-09 | The reference voltage circuit and its working method with compensation circuit of power module |
| CN201810403994.XA Pending CN108376012A (en) | 2017-05-09 | 2017-05-09 | Power module and its working method with compensation circuit, filter circuit |
| CN201810679844.1A Pending CN108563281A (en) | 2017-05-09 | 2017-05-09 | A method of forming compensation circuit on reference voltage circuit |
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| CN201711161314.XA Pending CN107894805A (en) | 2017-05-09 | 2017-05-09 | A kind of power module for including reference voltage circuit |
| CN201810403990.1A Withdrawn CN108491022A (en) | 2017-05-09 | 2017-05-09 | Power module and working method based on compensation circuit, filter circuit |
| CN201810402370.6A Pending CN108427470A (en) | 2017-05-09 | 2017-05-09 | The reference voltage circuit and its working method with compensation circuit of power module |
| CN201810403994.XA Pending CN108376012A (en) | 2017-05-09 | 2017-05-09 | Power module and its working method with compensation circuit, filter circuit |
| CN201810679844.1A Pending CN108563281A (en) | 2017-05-09 | 2017-05-09 | A method of forming compensation circuit on reference voltage circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106959722B (en) * | 2017-05-09 | 2018-08-07 | 东莞市乐丰电器科技有限公司 | A kind of reference voltage circuit and power module with compensation circuit |
| CN109407747A (en) * | 2018-12-19 | 2019-03-01 | 佛山臻智微芯科技有限公司 | A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation |
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- 2017-05-09 CN CN201711161314.XA patent/CN107894805A/en active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| CN107894805A (en) | 2018-04-10 |
| CN108491022A (en) | 2018-09-04 |
| CN108563281A (en) | 2018-09-21 |
| CN108376012A (en) | 2018-08-07 |
| CN108427470A (en) | 2018-08-21 |
| CN106959722A (en) | 2017-07-18 |
| CN106959722B (en) | 2018-08-07 |
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