CN105720929B - A kind of wide high-frequency low-noise acoustic amplifier of band gap automatic biasing - Google Patents
A kind of wide high-frequency low-noise acoustic amplifier of band gap automatic biasing Download PDFInfo
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- CN105720929B CN105720929B CN201610045158.XA CN201610045158A CN105720929B CN 105720929 B CN105720929 B CN 105720929B CN 201610045158 A CN201610045158 A CN 201610045158A CN 105720929 B CN105720929 B CN 105720929B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
Abstract
The invention discloses a kind of wide high-frequency low-noise acoustic amplifiers of band gap automatic biasing, it is intended to solve the problems, such as the current mismatch of prior art low-noise amplifier source degeneracy structure and avoid the undesirable influence brought of direct current biasing.The wide high-frequency low-noise acoustic amplifier of the band gap automatic biasing, including low noise amplifier circuit and band-gap reference circuit, the magnitude of current of wherein band-gap reference circuit is controlled by numerical control unit, and the electric current of band-gap reference circuit output amplifies the bias current as low noise amplifier circuit at double by mirror image；Low noise amplifier circuit uses cascode structure, signal to input the base stage that the inductance L1 in piece is connected to transistor Q8 from the ports In, and the node between the ports In and inductance L1 draws branch series capacitance C4 ground connection；Signal passes through voltage-current feedback in transistor Q8, is amplified in the collector output of transistor Q9, and exported by buffer cell Buf, completes the low noise amplification function of signal.
Description
Technical field
The present invention relates to a kind of low noise amplifier circuits.
Background technology
As first circuit module of radio-frequency transmitter, low-noise amplifier (LNA, low noise amplifier)
With useful signal (signal) is amplified, while inhibiting the function of noise (noise), and band-gap reference (Bandgap) circuit
Then voltage or current offset are provided for amplifier circuit in low noise.The working mechanism of entire circuit is that band-gap reference circuit generates
One reference voltage/electric current small with temperature, technique and supply voltage correlation, and the signal is added to low noise amplification
In device；Under the biasing of band gap voltage, the quiescent point of low-noise amplifier is determined, that is, ensures the input of needs
With (S11, input match), signal gain (S21, power gain) and smaller noise coefficient (NF, noise figure)
Etc. indexs, at this moment signal can input low-noise amplifier with smaller loss, and be amplified by the circuit, at the same
Under the premise of ensureing smaller noise, the amplitude of noise signal is effectively inhibited.
Low-noise amplifier is the amplification that reasonable amplitude is carried out to the radiofrequency signal that antenna receives, this is just needed in broadband
The matching that input impedance is realized in input range, avoids energy loss and the reflection interference to antenna, realizes lower low noise
Sonic system number improves receiver sensitivity；Obtain enough gains and gain flatness with reduce the influence of noise of late-class circuit with
And non-linear distortion；And there should be lower power consumption, avoid excessive energy loss, cause unnecessary loss.
Band-gap circuit is then to be generated by diode circuit and the small voltage of correlations such as temperature and technique, by the voltage into
Row input, is input in low-noise amplifier.Principle when designing the circuit is：With good anti-extraneous performance (temperature resistance
Degree variation, anti-technique change and anti-mains voltage variations) and influence of the external circuit to band-gap circuit should be reduced (such as reduce low
Influence of the noise amplifier to band-gap circuit).
Current most of circuit designs are planned band-gap reference biasing and are made in outside piece, biased outside Off-chip test and piece,
Or band-gap circuit is fabricated separately, the band gap voltage signal generated is input in low-noise amplifier.
The prior art one：
" a kind of low noise of wide power voltage work is put for patented technology that Zhejiang Province Jiaxing couple stars Electronics Co., Ltd. possesses
It is public in big device biasing circuit " (103178788 A of publication No. CN, application number 201310036309.1, applying date 2013.01.29)
Open that one is the low-noise amplifier biasing circuits to work for wide power voltage.As shown in Figure 1, the circuit includes main biasing
Circuit, bias stabilization feedback branch and a bias current source circuit.Two triodes of bias stabilization feedback circuit are complementation
Two class casts, make the direct current pressure drop of bias stabilization feedback branch close to zero.The principle of the circuit is as follows：Pass through bias current
Source generating circuit generates bias current, is input to main biasing circuit and bias stabilization feedback branch, then anti-by bias stabilization
The feedback performance for presenting branch, stablizes main biasing circuit, final bias voltage is added in main amplifying circuit.
The circuit has the following disadvantages：
1. the voltage drop of feedback branch is that zero though ground voltage nargin may be implemented, since the program sacrifices triode
The voltage bias of Q2, Q4, two pipes can enter linear zone, it is difficult to realize good feedback effect.
2. inductance Ls is connected on source electrode, realizes crystal by the source degeneracy structure that the Q0 transistors of low-noise amplifier use
The matching of pipe Q1 and Q0.Although under DC frequencies, inductance can't introduce deviation, due to the inductance realized in piece all have compared with
High resistance components, therefore the DC environment of Q0 and Q1 and differ.The dead resistance of inductance can introduce the error on electric current.
3. biasing circuit gives reference current Iref, but does not propose the circuit structure of the electric current, also do not provide
Its noise, the conditions such as anti-technological parameter, therefore circuit are simultaneously not perfect.
The prior art two：
Prabir K.Saha of georgia ,U.S.A school et al. propose a kind of high-frequency low noise amplification of Pi types matching network
Device (meeting title：RWS page numbers：The 203-206 times：2012).The structure of the circuit using single-stage Cascode as shown in Fig. 2, tied
Structure improves the isolation output and input, 50 ohmages of small signal is realized using parallel connection-parallel feedback, and using input Pi
Type real-time performance Broadband Matching.
The circuit has the following disadvantages：Circuit only has LNA components, has no offset portion, so needing the tune of external circuit
It is whole to realize quiescent point.
Invention content
The invention discloses a kind of wide high-frequency low-noise acoustic amplifiers of band gap automatic biasing, it is intended to solve prior art low noise
The current mismatch problem of amplifier source degeneracy structure and the undesirable influence brought for avoiding direct current biasing.
Technical scheme is as follows：
A kind of wide high-frequency low-noise acoustic amplifier of band gap automatic biasing, including low noise amplifier circuit and band-gap reference circuit,
The magnitude of current of wherein band-gap reference circuit is controlled by numerical control unit, and the electric current of band-gap reference circuit output amplifies at double by mirror image
Bias current as low noise amplifier circuit；Low noise amplifier circuit uses cascode structure, signal to be inputted from the ports In
Inductance L1 is connected to the base stage of transistor Q8 in piece, and the node between the ports In and inductance L1 is drawn branch series capacitance C4 and connect
Ground；Signal passes through voltage-current feedback in transistor Q8, is amplified in the collector output of transistor Q9, and by slow
Unit B uf outputs are rushed, the low noise amplification function of signal is completed.
On the basis of above scheme, the present invention has also further made following specific optimization：
The capacitance C4 is provided by the parasitic capacitance of pad (wiring backing plate).
The band-gap reference circuit includes start-up circuit part, main body circuit part and current output circuit portions；
In main body circuit part：Transistor Q6, Q7 and R3 form PTAT circuit structure, and the collector of transistor Q6 is through electricity
Resistance R2, transistor Q7 collector be connected to the emitter of transistor Q4 jointly through resistance R4 so that inflow transistor Q6, Q7 this two
The electric current of a branch is equal；Transistor Q5 and transistor Q4 constitutes mirror-image structure, and in transistor Q5 emitters setting adaptation
Resistance R5 keeps the voltage of transistor Q5 emitters identical as the voltage of the emitter of transistor Q4, makes branch where transistor Q5
Precise and stable electric current IR5 is provided；
Current output circuit portions build two-stage current mirror using MOS transistor, and the collector of the transistor Q5 connects the
The drain electrode of secondary current mirror side, while also connecing the total grid node of first order current mirror so that electric current IR5 is in second level current mirror
Drain electrode one mirror image of output and smaller electric current Iref compared with needing of the other side.(due to electric current be amplify at double, but in order to
The Iref value of reference current is set to reduce to optimize power consumption, so propose to need to compare smaller electric current here.)
There are one positive one negative two-way feedbacks, wherein positive feedback to realize circuit to degeneracy point in the start-up circuit part
Convergence, negative-feedback realize that circuit stability, the loop gain of negative-feedback are more than the loop gain of positive feedback.
It is connected using the resistance of two kinds of temperatures coefficient in the resistance R5 of transistor Q5 emitters setting adaptation.
The control signal of numerical control unit is connected to the grid of one group of MOS transistor M12, M14, and the drain electrode of M12, M14 are connected to altogether
The drain electrode of the second level current mirror other side.
Control signal output D1, D2 of numerical control unit connects MOS transistor through two smith triggers S1 with S2 respectively
The grid of M12, M14.
The present invention is exported high-performance current by the band-gap reference circuit of co-design, and using numerical control unit to electric current
Amount is further controlled, and electric current is carried out mirror image, generates the bias current of low-noise amplifier, stabilizing circuit performance.
In addition, low-noise amplifier uses non-source degeneracy structure, while ensuring wide high frequency performance, realize the performance of current mirror into one
Step optimization.Specifically have the advantage that：
1. using the Q8 for not adding source inductance, the dead resistance additionally introduced is avoided, the evil for causing noiseproof feature is avoided
Change and biasing mismatches.
2. current offset is not introduced into additional linear area circuit, the undesirable of direct current biasing is avoided.
3. the electric current is suitable for the low-noise amplifier of ultrabroad band.
Description of the drawings
Fig. 1 is the schematic diagram of the prior art one.
Fig. 2 is the schematic diagram of the prior art two.
Fig. 3 is the relation schematic diagram of band-gap circuit and low-noise amplifier.
Fig. 4 is the overall plan schematic diagram of the present invention.
Fig. 5 is the main structure chart of band-gap reference circuit.
Fig. 6 is the schematic diagram of the current output circuit portions in Fig. 5.
Fig. 7 is the combining structure schematic diagram of band-gap reference electric current and low noise amplifier circuit.
Specific implementation mode
Novel circuit structure proposed by the present invention is to share band-gap reference circuit and low noise amplifier circuit co-design
A kind of RF receiving circuit reducing energy consumption is realized in highly energy-consuming part therein.
Fig. 3 illustrates the relationship (note of two parts circuit：Band-gap circuit and low-noise amplifier are separated in figure, be in order to
Illustrate mutual relationship, be that whole joint is realized both in the particular circuit configurations of the present invention).Two circuit parts by
Power vd D provides voltage, and band-gap reference itself can generate a band gap voltage VB small with influence factor correlation, the voltage
Into in LNA, it is biased.Input signal Vin is received by piece outside antenna, is amplified into low-noise amplifier, and A is generated
The signal of Vin, wherein A are the gain of the amplifier.Pass through above-mentioned circuit, so that it may to generate an amplified signal.
The band-gap circuit part of the present invention and the overall plan of low-noise amplifier part are as shown in figure 4, band-gap reference produces
Raw reference current Iref, the electric current are controlled by two signal D1 and D2 of numerical control unit, i.e., two signal realizes the adjustment to Iref.
Q1 and Q2 is the current-mirror structure of low-noise amplifier, which is located in low-noise amplifier rather than in band-gap reference.Pass through
The operating current I1 of needs is realized in amplification to Iref.Totally apparently, the most significant feature of the circuit is：Current mirror is located at
Low-noise amplifier part, and Iref can be adjusted by numerical control position.
Fig. 5 be band-gap reference circuit structural schematic diagram, circuit by the way that the voltage difference of Q6 and Q7 are acted on resistance R3, with
One and the relevant electric current IR3 of temperature are generated, and the electric current is replicated to IR5 by transistor Q4 and Q5, and combines the temperature of resistance R5
It spends characteristic and generates one and the small electric current IR5 of temperature dependency.Wherein the main part of circuit be Q4, Q5, Q6, Q7, R2, R3, R4,
R5 and M7-M14, rest part are biasing and circuit stability structure.Wherein Q6, Q7 and R3 are PTAT circuit structure, due to stream
The electric current for entering two-way is essentially equal, therefore the base-collector voltage (BE) of Q6 is greater than Q7, to generate voltage certain on R3
Drop.It can be obtained by the voltage-to-current exponential relationship of diode, the electric current flowed through on R3 is：
R therein is the ratio between the number of tubes of Q7 and Q6, kT/q 26mV.When choosing the desired value of R3, it may be determined that IR3
Electric current, by the expression formula in trying as it can be seen that the electric current is a PTAT current, i.e. electric current is proportionate with temperature.Resistance R2 and R4
Resistance identical for size and full symmetric, general way are positive and negative two that the upper end of R2 and R4 is connected on to an amplifier respectively
Pole is allowed to equal to stablize 2 points of the voltage, and then ensures that the branch current for flowing into Q6 and Q7 is equal.Such design is answered
Preferable performance may be implemented, however, since (offset voltage, generally 10mV are left there are offset voltage for amplifier itself
It is right), it can be inherently so that there are the unequal situations of voltage for the upper end of R2 and R4.The method that the present invention uses is, by R2 and R4
It is connected to end point simultaneously, forces the voltage of two-end-point equal, then enables the electric current of two branches identical.The advantages of designing in this way has
Following two points：One, there is no the differences on voltage for two-end-point after short circuit, that is, realize that offset voltage are minimum, best performance
The case where；Two, since amplifier is omitted so that chip area substantially reduces, and reduces cost.Due to the electric current and IR3 phases of Q6
Together, therefore the upper terminal voltage A points of R2 and R4 can be expressed as：
By above formula as it can be seen that A point voltages are by a base-collector voltage (V negatively correlated with temperatureBE) and a positive
The voltage (second part) of pass generates jointly, it should be noted that and the second part in formula, coefficient are the ratio of R2 and R3, this
Sample has the advantage that, can be big using point-device relative value in the case that the absolute value of resistance is unstable in process
Stablize this greatly.To realize at the working temperature the small temperature coefficient of circuit (at room temperature), can enable
By choosing suitable R2 and R3, you can ensure the performance.
Come the small voltage of the temperature dependency that copies A points, another Q4 is identical as the size of Q5 for the effect of Q5 and R5, it can be ensured that
The voltage of Q5 emitters (B points) is identical as A, in addition, reasonably carrying out value to R5 may further ensure that B point voltages and A
It is identical.It is so just a voltage small with temperature dependency in B points can further obtain by the Voltage-current conversion of R5
The electric current small to a temperature dependency.It should be noted that even if the voltage small with temperature dependency may be implemented in B points, but
Since R5 resistance has certain temperature coefficient (the temperature coefficient difference of different resistance is also very big), one and temperature just will produce
Relevant electric current is spent, formula is seen below
For this problem, the present invention is connected when designing R5 using the resistance of two kinds of temperatures coefficient, i.e., by resistance from
Body tc compensation is, it can be achieved that the small electric current of a temperature dependency, i.e.,
The component part that R51 and R52 is R5 in formula forms the small electric current of temperature dependency by properly choosing two values.
MOS transistor M1-6 is as a start-up circuit, and when supply voltage powers on, M4 conductings, M5 conductings force Q4's
Base voltage rises so that band-gap circuit works.M3, M2 and M1 can form an effective charge leakage circuit, avoid electricity
Source overtension causes device failure.There are two-way feedbacks in circuit, and one positive one negative, stabilizing circuit working condition, is Q3 respectively,
R1, M4, M5 and Q8, C2, Q9.The work of two-way can be analyzed as follows：First via negative-feedback can be caused when the raising of A point voltages
The collector voltage of Q3 reduces, while the grid voltage of the M4 and M5 connected reduces, and then the base voltage of Q4 is caused to increase, shape
At positive feedback.The working condition of the feedback on the second tunnel is as follows：The collector voltage of Q7 increases, and the collector voltage of Q8 reduces, into
And the collector voltage of Q9 (i.e. the base stage of Q4) reduces, therefore the emitter voltage of Q4 is reduced, the collector voltage of Q7 is reduced, it is real
Existing negative-feedback performance.Therefore, convergence of the circuit to degeneracy point can be realized using positive feedback, and can realizes that circuit is steady using negative-feedback
It is fixed.It should be noted that the loop gain of negative-feedback needs the loop gain more than positive feedback, circuit just may insure in this way
It works normally and stablizes.
Fig. 6 is the current output circuit portions in Fig. 5, in the case where IR5 is determined, by current mirror M7, M9, M11 with
M13 is exported.The present invention mentality of designing be：By M9 and M10, a smaller electric current compared with needing is realized, in this way
Can carry out supplement appropriate by M11 and M13, realize it is preferable as a result, due to having taken smaller electric current, can be with
Reduce influence of the technique to result.M12 and M14 is controlled by numerical control unit, the present invention using two smith trigger S1 and S2 come
Connect the grid and numerical control unit of two transistor.The advantage of doing so is that can further decrease since the shake of numerical control unit is made an uproar
Acoustic grating pole tension changes, and additionally generates a unwanted signal.Smith triggers can generate a fixed voltage (VDD
Or GND), which depends on the signal height of numerical control unit, i.e., by the value of D1 and D2, come determine the switch of electric current with
It is no.
Fig. 7 is the combinational circuit of band-gap reference electric current and low-noise amplifier, and electric current Iref flows into Q10, Q11 and R6.It should
Mirror current source is made of Q11 and Q12, and basic function is to use different number of transistor so that flows through the electric current of Q11 at double
It is amplified in the direct current biasing of Q12, the introducing of Q10 can further decrease the by-pass current leakage of Q11, and R6 can improve Q10
Base voltage, it is ensured that realize correct electric current.R7 is the blocking resistance of offset portion.Low-noise amplifier is exported by the ports In,
By C4, L1, Q12, Q13, amplify at the load of R8 and L2, and is exported by the Buf units that gain is approximately 1.This circuit
The advantages of be, mirror-image structure is simple, and the introducing of R7, which can ensure that, realizes larger current gain；Q10 can further decrease electricity
The matching error of flow enhancement；Since the emitter of Q12 does not have series inductance, it is hereby ensured that electric currents to replicate completely, reduces system
System error.Capacitance C3 maximizes the influence of noise reduced in band-gap reference circuit to filter out the noise signal of electric current.
Low-noise amplifier uses cascode structure, can greatly reduce the Miller effect, and signal is inputted from the ports In, is led to
It crosses and also has the broadband matching network that Q12 is formed, C4 that can be provided by the parasitic capacitance of pad by C4, L1, simplify circuit form, and it is electric
Feeling L1 then uses inductance in piece, radio-frequency input signals to pass through voltage-current feedback in Q12, is carried out in the collector output of Q13
Amplification, and exported by buffer cell Buf, complete the low noise amplification function of signal.
Claims (6)
1. a kind of wide high-frequency low-noise acoustic amplifier of band gap automatic biasing, it is characterised in that：Including low noise amplifier circuit and band gap
The magnitude of current of reference circuit, wherein band-gap reference circuit is controlled by numerical control unit, and the electric current of band-gap reference circuit output passes through mirror
As amplifying the bias current as low noise amplifier circuit at double；Low noise amplifier circuit use cascode structure, signal from
The ports In input inductance L1 in piece is connected to the base stage of transistor Q8, and the node between the ports In and inductance L1 draws branch string
Join capacitance C4 ground connection；Signal passes through voltage-current feedback in transistor Q8, is put in the collector output of transistor Q9
Greatly, and by buffer cell Buf it exports, completes the low noise amplification function of signal；
The band-gap reference circuit includes start-up circuit part, main body circuit part and current output circuit portions；
In main body circuit part：Transistor Q6, Q7 and resistance R3 form PTAT circuit structure, and the collector of transistor Q6 is through electricity
Resistance R2, transistor Q7 collector be connected to the emitter of transistor Q4 jointly through resistance R4 so that inflow transistor Q6, Q7 this two
The electric current of a branch is equal；Transistor Q5 and transistor Q4 constitutes mirror-image structure, and in transistor Q5 emitters setting adaptation
Resistance R5 keeps the voltage of transistor Q5 emitters identical as the voltage of the emitter of transistor Q4, makes branch where transistor Q5
Precise and stable electric current IR5 is provided；
Current output circuit portions build two-stage current mirror using MOS transistor, and the collector of the transistor Q5 connects the second level
The drain electrode of current mirror side, while also connecing the total grid node of first order current mirror so that electric current IR5 is another in second level current mirror
Drain electrode one mirror image of output and smaller electric current Iref compared with needing of side.
2. the wide high-frequency low-noise acoustic amplifier of band gap automatic biasing according to claim 1, it is characterised in that：The capacitance C4
It is provided by the parasitic capacitance of wiring backing plate.
3. the wide high-frequency low-noise acoustic amplifier of band gap automatic biasing according to claim 1, it is characterised in that：The startup electricity
There are one positive one negative two-way feedbacks, wherein positive feedback to realize that electricity is realized in convergence of the circuit to degeneracy point, negative-feedback in the part of road
Road is stablized, and the loop gain of negative-feedback is more than the loop gain of positive feedback.
4. the wide high-frequency low-noise acoustic amplifier of band gap automatic biasing according to claim 1, it is characterised in that：In transistor Q5
The resistance R5 of emitter setting adaptation is connected using the resistance of two kinds of temperatures coefficient.
5. the wide high-frequency low-noise acoustic amplifier of band gap automatic biasing according to claim 1, it is characterised in that：Numerical control unit
Control signal is connected to the grid of one group of MOS transistor M12, M14, and it is another that the drain electrode of M12, M14 is connected to the second level current mirror altogether
The drain electrode of side.
6. the wide high-frequency low-noise acoustic amplifier of band gap automatic biasing according to claim 5, it is characterised in that：Numerical control unit
Control signal output D1, D2 connects the grid of MOS transistor M12, M14 through two smith triggers S1 with S2 respectively.
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| FR3059493B1 (en) * | 2016-11-29 | 2019-11-22 | Stmicroelectronics Sa | REGULATING AN RF AMPLIFIER |
| CN108376012A (en) * | 2017-05-09 | 2018-08-07 | 常州爱上学教育科技有限公司 | Power module and its working method with compensation circuit, filter circuit |
| CN108923752A (en) * | 2018-06-22 | 2018-11-30 | 东南大学 | A kind of broadband fully differential noise cancellation low-noise amplifier |
| CN110752829B (en) * | 2019-09-23 | 2023-03-24 | 航天科工微电子系统研究院有限公司 | Bias circuit and amplifier circuit applied to 5G WiFi communication low-noise amplifier |
| CN115079767A (en) * | 2022-06-28 | 2022-09-20 | 汇春科技(成都)有限公司 | Band-gap reference voltage source |
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|---|---|---|---|---|
| CN102694514A (en) * | 2012-05-29 | 2012-09-26 | 上海艾为电子技术有限公司 | Power amplifier |
| CN103399612A (en) * | 2013-07-16 | 2013-11-20 | 江苏芯创意电子科技有限公司 | Resistance-less bandgap reference source |
| CN104038158A (en) * | 2014-06-05 | 2014-09-10 | 西安电子科技大学 | Low-noise amplifier structure |
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| US7683701B2 (en) * | 2005-12-29 | 2010-03-23 | Cypress Semiconductor Corporation | Low power Bandgap reference circuit with increased accuracy and reduced area consumption |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694514A (en) * | 2012-05-29 | 2012-09-26 | 上海艾为电子技术有限公司 | Power amplifier |
| CN103399612A (en) * | 2013-07-16 | 2013-11-20 | 江苏芯创意电子科技有限公司 | Resistance-less bandgap reference source |
| CN104038158A (en) * | 2014-06-05 | 2014-09-10 | 西安电子科技大学 | Low-noise amplifier structure |
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