CN101980097B - Low-voltage reference source with low flicker noise and high power-supply suppression - Google Patents
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Abstract
The invention discloses a low-voltage reference source with low flicker noise and high power-supply suppression. The low-voltage reference source comprises a starting circuit, a self-cascaded operational amplifier, a temperature coefficient compensating circuit and a reference output-level circuit, wherein the self-cascaded structures; and the self-cascaded the low-voltage reference source, the power-supply suppression is improved and the flicker noise is reduced at the same time; an input metal oxide semiconductor (MOS) pipe in the operational amplifier is a primary MOS pipe, so that the flicker noise is further reduced and voltage redundancy is saved in a low-voltage circuit at the same time; and after the temperature coefficient compensating circuit is expanded into a high-level temperature coefficient compensating circuit, the change of reference source output voltage with the temperature is further reduced and the stability of the reference source output voltage is improved.
Description
Technical field
The invention belongs to the IC design field, be specifically related to a kind of high PSRR of under low-voltage, working, the voltage-reference of low flash noise, this design realizes based on CMOS technology.
Background technology
Reference source is module indispensable in Analogous Integrated Electronic Circuits and the composite signal integrated circuits; Be widely used in low pressure differential adjuster, Switching Power Supply, data converter etc., the output of these circuit universal demand reference sources does not change with the variation of temperature and supply voltage.The reference source of main flow all adopts thermal voltage V at present
TPositive temperature coefficient (PTC) and the base-emitter V of bipolar transistor (triode)
BEThe negative temperature coefficient of voltage compensates realizes the lower temperature coefficient, can add the high-order compensation that other technologies are carried out temperature coefficient simultaneously; Weakening supply voltage to aspect the reference source influence, method presents variation, mainly weighs with the PSRR index.Reducing temperature coefficient is two big eternal theme of reference source design with improving the power supply inhibition.
In recent years; The notion of low-carbon energy-saving and environmental protection and development trend thereof are more remarkable; Promote IC design and trend towards the low supply voltage design, thereby low voltage circuit is designed to an especially big emphasis and a difficult point of Analogous Integrated Electronic Circuits design of IC design now.At present, a large amount of disposable battery of 1.5V and rechargeable batteries of 1.2V of adopting in the portable type electronic product, when battery electric quantity reduced, output voltage can descend, so generally require reference source can be operated under the voltage of 1V.Because the V of triode
BEVoltage has taken the voltage remaining about 0.7V, and this design to reference source has proposed higher requirement, make in the past reference source satisfy simultaneously circuit under low pressure operate as normal with improve the power supply very difficulty that suppresses to become.
Simultaneously, under the situation of low-voltage, the noise in the reference source is amplified relatively, makes that reducing noise becomes more important in the reference source design.In the existing method that reduces the reference source flicker noise; Chinese patent CN101630173 has provided a kind of metal-oxide-semiconductor that utilizes and has carried out periodically switching the mode that reduces flicker noise in strong inversion district and cut-off region; U.S. Pat 6160274, US6514825 and US6653679 are different from the low flash noise transistor of main stream of CMOS technology through special process step or material manufacturing, but these methods have all been paid the cost that has increased circuit design or processes complicacy.
Summary of the invention
The invention provides the low pressure reference source of a kind of low flash noise, the inhibition of high power supply, circuit design is simple, can satisfy the requirement of low flash noise, the inhibition of high power supply simultaneously.
The low pressure reference source that a kind of low flash noise, high power supply suppress comprises start-up circuit, Self-cascading current mirror, operational amplifier, tc compensation circuit and benchmark output-stage circuit.
Described start-up circuit is connected with the tc compensation circuit, for other circuit provide starting current, and behind circuit start, cuts off and the getting in touch of other circuit;
Described current mirror comprises the current source of three Self-cascading structures; Be that three branch roads provide identical electric current; Each Self-cascading current source is composed in series by two PMOS pipes, and their grid links to each other, and all the other ends link to each other with power supply; The other end links to each other with temperature-compensation circuit or benchmark output circuit, and the grid of three Self-cascading current sources also joins;
Described operational amplifier is used for making two point voltages of temperature-compensation circuit to equate that its positive inverting input is connected on two branch roads of tc compensation circuit, and output terminal is connected on the grid of Self-cascading current mirror;
Described at the tc compensation circuit; Contain the different PNP triode of two launch sites-base area and three resistance; The wherein base stage of two triodes and grounded collector, emitter connects the Self-cascading current mirror, and the less triode of area is parallelly connected with a resistance; The triode that area is bigger is connected with a resistance, and is parallelly connected with a resistance again;
Described benchmark output-stage circuit comprises a resistance, and the current conversion that the Self-cascading current mirror is duplicated is the reference source output voltage.
Preferably, the PMOS of described current mirror pipe adopts the low threshold voltage metal-oxide-semiconductor, and the absolute value of its threshold voltage is 50%～75% of a standard metal-oxide-semiconductor.
Preferably, described operational amplifier by in the input metal-oxide-semiconductor adopt primary metal-oxide-semiconductor, the grid of two primary metal-oxide-semiconductors is received two input ends of amplifier respectively.
Preferably; Described tc compensation circuit can expand to high-order tc compensation circuit, and this scheme is on the basis of aforementioned reference source, to add a branch road, and this branch road comprises one and is composed in series Self-cascading current source and a triode by two PMOS pipes; The grid of described Self-cascading current source links to each other; One end links to each other with power supply, and the other end links to each other with the benchmark output circuit, also joins with the grid of three Self-cascading current sources of described Self-cascading current mirror; The base stage of triode and grounded collector, emitter connect the Self-cascading current source; The resistance of two equivalences of cross-over connection between two input ends of the emitter of this triode and amplifier.
Technique effect of the present invention is:
(1) the Self-cascading structure current mirror that utilizes low threshold voltage PMOS pipe to realize has improved the power supply inhibition in low pressure reference source, reduced flicker noise.
(2) operational amplifier by in the input metal-oxide-semiconductor adopt primary metal-oxide-semiconductor, further reduced flicker noise, in low-voltage circuit, saved simultaneously the voltage remaining.
(3) described tc compensation circuit is expanded to high-order tc compensation circuit after, further reduced the reference source output voltage with variation of temperature, improved the stability of benchmark output voltage.
Description of drawings
Fig. 1 is the concrete integrated circuit schematic diagram of realizing of the present invention.
Fig. 2 is the synoptic diagram of the primary NMOS pipe that in operational amplifier, uses.
Fig. 3 is the schematic diagram of Self-cascading current source structure.
Fig. 4 is an integrated circuit schematic diagram of realizing temperature coefficient high-order compensation reference source.
Embodiment
In order to describe the present invention more particularly, technical scheme of the present invention and relative theory are described in conjunction with accompanying drawing and embodiment.
As shown in Figure 1, the integrated circuit of the low pressure reference source that a kind of low flash noise, high power supply suppress is one embodiment of the present of invention, and it comprises start-up circuit, Self-cascading current mirror, operational amplifier, tc compensation circuit and benchmark output-stage circuit.
Described start-up circuit is made up of resistance R s and two NMOS pipe Mn1 and Mn2.Wherein Rs is connected between the grid of power supply and Mn1; The drain electrode of Mn1 connects power supply, and its source electrode connects the emitter of triode Q1; The grid of Mn2 and drain electrode termination, its source ground.
Described Self-cascading current mirror is made up of PMOS pipe Ma1～2, Mb1～2 and Mc1～2 of six low threshold voltages; They have formed the current source of three Self-cascading structures, are that three branch roads provide identical electric current, are example with Ma1 and Ma2; Two metal-oxide-semiconductors are connected in series; Grid links to each other, and the source electrode of Ma1 links to each other with power supply, and the drain electrode of Ma2 links to each other with the emitter of Q1; In like manner, Mb1～2 are similar with the annexation of Ma1～2 with Mc1～2, only are that the point that is connected with Mc2 of Mb2 is different; In addition, the grid of three Self-cascading current sources also joins, and they form the Self-cascading current mirror jointly.
Mark in the dashed rectangle of described operational amplifier in Fig. 1; The drain electrode of one end of the emitter that triode Q1 is arranged that links to each other with the amplifier inverting input, an end of resistance R 1, resistance R 4 and PMOS pipe Ma2; The drain electrode of one end of the end that resistance R 0 is arranged that links to each other with the amplifier in-phase input end, an end of resistance R 2, resistance R 5 and PMOS pipe Mb2, the grid of these six PMOS pipes of the output terminal of amplifier and current mirror Ma1～2, Mb1～2 and Mc1～2 links to each other.In addition, the positive inverting input of amplifier links to each other with the grid of two primary NMOS pipe Mi1 and Mi2 respectively in amplifier inside, and is as shown in Figure 2.
Described tc compensation circuit comprises that the PMOS of Q1, two triodes of Q2 and R0, R1, three resistance of R2 and 8 low threshold voltages manages.Q1 and Q2 are PNP substrate triodes, wherein the launch site of Q2-base area be Q1 N doubly, the equal ground connection of their base stage and collector, Q1 is parallelly connected with R1, the emitter of Q2 links to each other with R0, and is parallelly connected with R2 again.
Described benchmark output-stage circuit comprises a resistance R 3, and it is the reference source output voltage V with the current conversion of the tc compensation that the Self-cascading current mirror duplicates
Ref
The relative theory of this embodiment is explained as follows:
The principle of work of start-up circuit is, when the core circuit electric current was zero, resistance R 1 voltage was zero, and resistance R s and NMOS pipe Mn2 make gate source voltage that NMOS manages Mn1 greater than its threshold voltage, and then Mn1 conducting is to the core circuit injection current.After core circuit reached normal working point, the Mn1 source voltage rose to about 0.7V, forced the Mn1 pipe to end, and start-up circuit is just kept apart with core circuit, can not impact core circuit again.
For temperature-compensation circuit, its principle of work is: at first, the amplifier that negative feedback connects makes its two input end imaginary shorts, and under the very big condition of amplifier gain, it is equal that two point voltages can be thought.Secondly, Self-cascading current mirror Ma1～2, Mb1～2 and Mc1～2 of same size make the electric current of three branch roads equate that with this understanding, the last electric current of R0 is proportional to thermal voltage V
T, and the electric current on the R2 is proportional to V
BE, both have opposite temperature coefficient, select N, R1 and the R2 of proper ratio, have just obtained the electric current of single order tc compensation.Like this, through current mirror Mc1～2 and resistance R 3, just realized the reference voltage V of temperature coefficient high-order compensation
Ref
As shown in Figure 3, the current mirror in the invention has adopted gravity flow to connect structure.The Self-cascading structure is a structure of being made up of two metal-oxide-semiconductors, and like Figure 30, this structure can be regarded a Darlington as, like Figure 31.The equivalent channel length L of this Darlington
eMore much bigger than common single tube, the L in promptly scheming
e＞L.Can know the long index of modulation λ of ditch ∝ L by the long mudulation effect of the ditch of metal-oxide-semiconductor
-1, and output resistance r
o∝ λ
-1, can draw r
o∝ L, therefore this structure has improved the output resistance of current source, makes bias current diminished by the influence of mains fluctuations, has promptly improved the power supply inhibition.
If the mutual conductance of MOS single tube is g
m, the overdrive voltage of the NMOS pipe among Figure 30 is respectively V
Dsat1And V
Dsat2Can know that through small-signal model calculating the output resistance of single tube current source is r
oMagnitude, and the output resistance of Self-cascading structure is g
mr
o 2Magnitude, suitable with the output resistance of the current source of common cascodes, but only consumed V
Dsat1+ V
Dsat2The voltage remaining, practiced thrift a threshold voltage than common cascade | V
Thp|.Therefore, this structure has overcome the big and little deficiency of single tube current source output resistance of common cascode current source attrition voltage remaining simultaneously, has realized in low-voltage circuit, improving the target that power supply suppresses.
When reality is used, the breadth length ratio W/L of M2 should for the n of the breadth length ratio of M1 doubly, n＞1, then the equivalent transconductance of this structure Darlington is g
M2/ n=g
M1For NMOS, the electric current that flows through Darlington is β
Eff(V
In-V
Thn)
2/ 2, wherein, β
Eff=β
1β
2/ (β
1+ β
2), when n＞＞1, β
EffBe about β
1
The metal-oxide-semiconductor of the low threshold voltage that the Self-cascading current mirror uses has reduced flicker noise.Invent in the reference source of said structure at this, current mirror is a main source of flicker noise.The metal-oxide-semiconductor of low threshold value generally can be provided in the technology of standard CMOS in modern times; This device is still the enhancement mode metal-oxide-semiconductor; But the absolute value of threshold voltage is lower than standard metal-oxide-semiconductor, and different according to technology, the absolute value of the threshold voltage of low threshold voltage metal-oxide-semiconductor is 50%～75% of a standard metal-oxide-semiconductor.
Flicker noise is the least clear and definite a kind of noise of mechanism of production in the MOS device, but generally the viewpoint of approval is, this noise and charge carrier are in that the capturing of oxide-silicon interface-release phenomenon is relevant.The impurity that low threshold mos pipe injects during fabrication lacks than the standard metal-oxide-semiconductor, and its oxide-silicon interface is more bright and clean, makes charge carrier captured and the probability that discharges reduces, so under the identical situation of channel area, have lower flicker noise.
Because the input pipe of amplifier is another main source of reference source flicker noise; In the amplifier input pipe, use primary metal-oxide-semiconductor further to reduce flicker noise; As shown in Figure 2 primary metal-oxide-semiconductor Mi1 and Mi2, the grid of two primary metal-oxide-semiconductors receive two input ends of amplifier respectively.
In the technological process of standard CMOS, can make this primary metal-oxide-semiconductor.Comparison with standard metal-oxide-semiconductor, primary metal-oxide-semiconductor are not adjust injection through threshold value through the metal-oxide-semiconductor of threshold value adjusting process step because of its, and it is brighter and cleaner that its oxide-silicon interface is compared the low threshold voltage metal-oxide-semiconductor, has the effect of better inhibition flicker noise.Because primary metal-oxide-semiconductor just can realize in standard CMOS process, the method for comparing in the background technology to be mentioned adopts this mode to reduce flicker noise and makes and design and manufacturing all is simplified.
Because the threshold voltage of primary NMOS generally is slightly less than zero, depletion device just, thereby under the situation that produces same electric current, its gate source voltage V
GSPressure drop is than the little threshold voltage V of standard metal-oxide-semiconductor
ThnAbout, in low voltage application, also practiced thrift the voltage remaining.
Embodiment 2
As shown in Figure 4; The low pressure reference source that a kind of low flash noise, high power supply suppress; Comprise start-up circuit, Self-cascading current mirror, operational amplifier, high-order tc compensation circuit and benchmark output-stage circuit, wherein start-up circuit, operational amplifier and benchmark output-stage circuit are identical with embodiment 1; Described Self-cascading current mirror has increased by one road Self-cascading current source Ms1～2, and its realization is consistent with three groups of current sources among method of attachment and the embodiment 1; Described high-order tc compensation circuit, comparing tc compensation circuit among the embodiment 1 has increased a triode Q3 and two resistance R 4, R5.The launch site of the triode Q3 that is increased-base area is identical with Q1's; The base stage of Q3 and grounded collector; Emitter connects a road newly-increased Self-cascading current source, and resistance R 4, R5 are connected across respectively between the emitter of two input ends and Q3 of amplifier, the electric current I that flows through on these two resistance
HOCompensated V
BEThe nonlinear terms of temperature coefficient make Q3 one road electric current realize the high-order compensation of temperature coefficient.Like this, through current mirror and resistance R 3, just realized the reference voltage V of temperature coefficient high-order compensation
Ref
The principle analysis of high-order tc compensation is following:
Usually, the base-emitter voltage V of triode
BEAnd the imperfect relation between the temperature can be expressed as:
Wherein T is an absolute temperature, T
0Be a definite reference temperature, V
BGBe the band gap voltage of silicon, η is a constant that depends on doping content, and m is a constant that depends on the transistor emitter current temperature characteristic.The basic thought of this compensation is, through having the V of single order temperature compensation
BE(m ≈ 0) and be proportional to the V of temperature
BE(m=1) appropriate combination arrives the purpose of high-order compensation.The V of Q3 and Q1～2 then
BEVoltage can be expressed as respectively:
Thus, utilize V
BE, Q3With V
BE, Q1～2Voltage difference just can derive and be proportional to V
BE(T) voltage of nonlinear terms (like Fig. 1) in the relational expression:
Like this, will with V
HOThe I that is directly proportional
HOFrom the electric current of single order tc compensation, deduct, just obtained high-order tc compensation electric current.Final output voltage can be expressed as:
Wherein, N is the ratio of Q2 and Q1 launch site-base area.
Under 1V voltage ,-25 ℃ in 85 ℃ temperature range, emulation obtains low pressure reference source output V
RefMinimum temperature coefficient be 0.2ppm, realized the target of temperature coefficient high-order compensation.
This high-order temperature coefficient of present embodiment is only repaid need increase a current source, a triode and two resistance on the basis of single order tc compensation, compare additive method and want simple a lot, has reduced circuit complexity, has saved the area of integrated circuit.
Claims (3)
1. the low pressure reference source that low flash noise, high power supply suppress comprises start-up circuit, Self-cascading current mirror, operational amplifier, tc compensation circuit and benchmark output-stage circuit, it is characterized in that:
Described start-up circuit is connected with the tc compensation circuit, for other circuit provide starting current, and behind circuit start, cuts off and the getting in touch of other circuit;
Described Self-cascading current mirror comprises three Self-cascading current sources; Be that three branch roads provide identical electric current; Each Self-cascading current source is composed in series by two PMOS pipes, and their grid links to each other, and all the other ends link to each other with power supply; The other end links to each other with temperature-compensation circuit or benchmark output circuit, and the grid of three Self-cascading current sources also joins;
Described operational amplifier is used for making two point voltages of temperature-compensation circuit to equate that its positive inverting input is connected on two branch roads of tc compensation circuit, and output terminal is connected on the grid of Self-cascading current mirror;
Described tc compensation circuit; Contain the different PNP triode of two launch sites-base area and three resistance; The wherein base stage of two triodes and grounded collector, emitter connects the Self-cascading current mirror, and the less triode of area is parallelly connected with a resistance; The triode that area is bigger is connected with a resistance, and is parallelly connected with a resistance again;
Described temperature-compensation circuit also comprises a branch road; This branch road comprises one and is composed in series Self-cascading current source and a triode by two PMOS pipe; The grid of described Self-cascading current source links to each other; One end links to each other with power supply, and the other end links to each other with the emitter of said triode, and the grid of three Self-cascading current sources of the grid of described Self-cascading current source and described Self-cascading current mirror also joins; The base stage of triode and grounded collector, emitter connect the Self-cascading current source; The resistance of two equivalences of cross-over connection between two input ends of the emitter of this triode and operational amplifier;
Described benchmark output-stage circuit comprises a resistance, and the current conversion that the Self-cascading current mirror is duplicated is the reference source output voltage.
2. the low pressure reference source that low flash noise according to claim 1, high power supply suppress; It is characterized in that: two input metal-oxide-semiconductors in the described operational amplifier adopt primary NMOS pipe, and the grid of two primary metal-oxide-semiconductors is received two input ends of operational amplifier respectively.
3. the low pressure reference source that low flash noise according to claim 1, high power supply suppress is characterized in that: the PMOS pipe of described current mirror adopts the low threshold voltage metal-oxide-semiconductor.
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| CN102622032B (en) * | 2012-04-17 | 2014-04-02 | 钜泉光电科技(上海)股份有限公司 | Low temperature coefficient bandgap voltage reference circuit |
| CN103389764B (en) * | 2012-05-09 | 2015-09-02 | 快捷半导体(苏州)有限公司 | A kind of low-voltage Bandgap voltage reference circuit and its implementation |
| CN102681580B (en) * | 2012-05-18 | 2014-07-23 | 中国科学院微电子研究所 | Current source circuit |
| CN103076832B (en) * | 2012-12-26 | 2015-03-04 | 中国科学院微电子研究所 | Self-bias current source |
| TWI486741B (en) * | 2013-07-16 | 2015-06-01 | Nuvoton Technology Corp | Reference voltage generating circuits |
| CN103901936A (en) * | 2014-04-25 | 2014-07-02 | 福建一丁芯光通信科技有限公司 | High power supply rejection bandgap reference source based on native transistor |
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| CN105224005B (en) * | 2015-10-23 | 2017-05-17 | 南京美辰微电子有限公司 | Triode cascaded current mirror |
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| CN112671360A (en) * | 2020-12-30 | 2021-04-16 | 四川长虹电器股份有限公司 | Multi-channel controllable gain amplifier |
| CN113805637B (en) * | 2021-09-09 | 2022-12-30 | 合肥中感微电子有限公司 | Low-dropout voltage regulator |
| CN114421897B (en) * | 2022-01-24 | 2023-12-08 | 江苏润石科技有限公司 | Circuit for reducing noise of integrated circuit amplifier and noise reduction method thereof |
| CN115328245A (en) * | 2022-08-09 | 2022-11-11 | 圣邦微电子（北京）股份有限公司 | Bias current generating circuit |
| CN115357087B (en) * | 2022-09-26 | 2024-01-19 | 杭州万高科技股份有限公司 | Band gap reference circuit |
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