CN108196614B - A kind of band gap reference and power supply device with temperature-compensating - Google Patents
A kind of band gap reference and power supply device with temperature-compensating Download PDFInfo
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- CN108196614B CN108196614B CN201810003219.5A CN201810003219A CN108196614B CN 108196614 B CN108196614 B CN 108196614B CN 201810003219 A CN201810003219 A CN 201810003219A CN 108196614 B CN108196614 B CN 108196614B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The present invention relates to Analogical Circuit Technique field more particularly to a kind of band gap references and power supply device with temperature-compensating.The band gap reference with temperature-compensating in the present invention includes four parts: start-up circuit, operation amplifier circuit, reference voltage generating circuit and compensation circuit, the start-up circuit connect with the reference voltage generating circuit and provides starting voltage, and the compensation circuit connect with the reference voltage generating circuit and provides temperature-compensating.The present invention, by increasing compensation circuit, reduces the temperature coefficient of output voltage, and precision with higher on the basis of traditional benchmark voltage source.The present invention also provides a kind of power supply device, the AC conversion that can be used for input is steady dc voltage output.
Description
Technical field
The present invention relates to Analogical Circuit Technique field more particularly to a kind of band gap reference with temperature-compensating and
Power supply device.
Background technique
Band gap reference is the basic modular unit in analog circuit, mixed signal circuit and digital circuit, its work
With being to provide the reference voltage not changed with temperature and supply voltage for system.In reference voltage generating circuit, temperature
Coefficient and the two parameters of precision play conclusive effect, high-precision, low-power consumption, low-temperature coefficient to the quality of power source performance
Reference voltage generating circuit it is most important for entire circuit.Traditional bandgap voltage reference is by having two just
The voltage of negative temperature coefficient, which carries out linear superposition, can be obtained the reference voltage of zero-temperature coefficient.The base of two double pole triodes
Pole-emitter voltage difference is and absolute temperature is proportional that the base emitter voltage of bipolar transistor has negative temperature
Coefficient properties are matched using both voltages of different nature and obtain the reference voltage unrelated with temperature change in certain proportion.
Since traditional reference voltage generating circuit only carries out linear compensation, low precision, when temperature range changes greatly, the electricity of generation
Pressure is usually not satisfactory, especially requires the voltage generated after linear compensation in relatively high circuit in some pairs of voltage accuracies
It is far from satisfying requirement.Based on this, the present invention provides one kind to have higher precision, lower temperature coefficient band gap reference electricity
Road.In addition, can be used for input AC electrotransformation being that steady dc voltage is defeated the present invention also provides a kind of power supply device
Out.
Summary of the invention
The purpose of the present invention is to solve the big problems of existing band gap reference temperature coefficient, provide a kind of higher
The band gap reference and power supply device with temperature-compensating of precision, lower temperature coefficient.
The present invention provides a kind of band gap references with temperature-compensating, including four parts: start-up circuit, operation are put
Big device circuit, reference voltage generating circuit and compensation circuit, the start-up circuit are connect simultaneously with the reference voltage generating circuit
Starting voltage is provided, the compensation circuit connect with the reference voltage generating circuit and provides temperature-compensating；The starting electricity
Road includes PMOS tube PM1, PMOS tube PM2 and capacitor C0；The source electrode of PMOS tube PM1 connects voltage VDD, grounded-grid, and drain electrode connects
The grid of PMOS tube PM2 and one end of capacitor C0, the other end ground connection of capacitor C0 are connect, the source electrode of PMOS tube PM2 connects voltage
VDD；The operation amplifier circuit includes PMOS tube PM3, PM4, resistance R3 and triode Q1, Q2, one end of the resistance R3
Voltage VDD is connected, the other end connects the source electrode of PMOS tube PM3, PM4, and the grid of PMOS tube PM3, PM4 is connected and connects PM4's
The collector of drain electrode and triode Q2；The collector of the triode Q1 connects the drain electrode of the PM3 and PM2, triode Q1, Q2
Emitter be grounded；The reference voltage generating circuit includes resistance R4, R5, R6, R6, R7, R8, R1, R11, further includes
NMOS tube NM10 and triode Q3, Q4；The compensation circuit includes PMOS tube PM12, PM13, PM14, NMOS tube NM11, NM15,
Triode Q5, Q6 and resistance R2, R9, R10；One end of the resistance R4 connects voltage VDD, and the other end connects NMOS tube
The drain electrode of NM10, the grid of the NM10 connect the drain electrode of the PM3, output end and connection of the source electrode as output voltage VREF
One end of resistance R5, the grid of the other end connection NMOS tube NM11 of resistance R5 and the one end for connecting resistance R6, resistance R6's is another
One end connects one end of resistance R7, R8 and the base stage of triode Q4, Q5；The collector connection resistance R7's of triode Q3 is another
The base stage of end and triode Q1, base stage, the other end of resistance R8 and the collector of Q4 of base stage connecting triode Q2, transmitting
Pole connects the emitter of Q4 and one end of resistance R1, one end of the other end connection resistance R11 of resistance R1 and triode Q6
Collector, resistance R11 the other end ground connection；The emitter of one end connecting triode Q5 of the resistance R2, other end ground connection；
The grid of the grid of the drain electrode connection PMOS tube PM12 of the NMOS tube NM11 and drain electrode and PM13, PM14, source electrode connection three
The collector of pole pipe Q5；The source electrode of described PMOS tube PM12, PM13, PM14 are all connected with voltage VDD；The leakage of the NMOS tube NM15
The base stage of pole connecting triode Q6 and the drain electrode of PMOS tube PM13, source electrode ground connection, grid connect PMOS tube PM14 drain electrode and
One end of resistance R10, the other end ground connection of resistance R10；The emitter of one end connecting triode Q6 of resistance R9, another termination
Ground.
The present invention also provides a kind of power supply device, the power supply device includes a kind of band with temperature-compensating
Gap a reference source, further includes rectification circuit, filter circuit, and the rectification circuit connects filter circuit, the filter circuit
Band-gap reference source circuit, the reference source circuit connection load are connected, the rectification circuit is used to convert alternating current input to
Direct current, the filter circuit are used to remove the ripple and noise in DC voltage, more steady so as to provide for load
Fixed output voltage.
A kind of band gap reference and power supply device with temperature-compensating provided by the present invention, efficiently solves existing
The problem that band gap reference precision in technology is not high enough, temperature coefficient is high, on the basis of traditional benchmark voltage generation circuit,
By increasing compensation circuit, the temperature coefficient of output voltage, and precision with higher are reduced.One kind provided by the invention
Power supply device can be used for input AC electrotransformation being steady dc voltage output
Detailed description of the invention
Fig. 1 is a kind of band-gap reference source circuit structural schematic diagram with temperature-compensating provided by the invention.
Fig. 2,3 are a kind of emulation knot of the band gap reference with temperature-compensating provided by the invention in the different temperatures stage
Fruit schematic diagram.
Fig. 4 is a kind of structural schematic diagram of power supply device provided by the invention.
Specific embodiment
The present invention provides a kind of band gap reference and power supply device with temperature-compensating, for make the purpose of the present invention,
Technical solution and advantage are clearer, clear, and the present invention is described in more detail as follows in conjunction with drawings and embodiments.It should
Understand, the specific embodiments described herein are merely illustrative of the present invention, is not intended to limit the present invention.
As shown in fig. 1, a kind of band gap reference with temperature-compensating, including four parts: start-up circuit, operation amplifier
Device circuit, reference voltage generating circuit and compensation circuit, the start-up circuit connect and mention with the reference voltage generating circuit
For starting voltage, the compensation circuit connect with the reference voltage generating circuit and provides temperature-compensating；The start-up circuit
Including PMOS tube PM1, PMOS tube PM2 and capacitor C0；The source electrode of PMOS tube PM1 connects voltage VDD, grounded-grid, drain electrode connection
The grid of PMOS tube PM2 and one end of capacitor C0, the other end ground connection of capacitor C0, the source electrode of PMOS tube PM2 connect voltage VDD；
The operation amplifier circuit includes PMOS tube PM3, PM4, resistance R3 and triode Q1, Q2, one end connection of the resistance R3
Voltage VDD, the other end connect the source electrode of PMOS tube PM3, PM4, and the grid of PMOS tube PM3, PM4 is connected and connects the drain electrode of PM4
With the collector of triode Q2；The collector of the triode Q1 connects the drain electrode of the PM3 and PM2, the hair of triode Q1, Q2
Emitter-base bandgap grading is grounded；The reference voltage generating circuit includes resistance R4, R5, R6, R6, R7, R8, R1, R11, further includes NMOS tube
NM10 and triode Q3, Q4；The compensation circuit includes PMOS tube PM12, PM13, PM14, NMOS tube NM11, NM15, triode
Q5, Q6 and resistance R2, R9, R10；One end of the resistance R4 connects voltage VDD, and the other end connects the leakage of NMOS tube NM10
Pole, the grid of the NM10 connect the drain electrode of the PM3, source electrode as output voltage VREF output end and connect resistance R5's
One end, the grid of the other end connection NMOS tube NM11 of resistance R5 and the one end for connecting resistance R6, the other end connection of resistance R6
One end of resistance R7, R8 and the base stage of triode Q4, Q5；The other end and three of the collector connection resistance R7 of triode Q3
The base stage of pole pipe Q1, base stage, the other end of resistance R8 and the collector of Q4 of base stage connecting triode Q2, emitter connect Q4
Emitter and resistance R1 one end, resistance R1 the other end connection resistance R11 one end and triode Q6 collector,
The other end of resistance R11 is grounded；The emitter of one end connecting triode Q5 of the resistance R2, other end ground connection；The NMOS
The grid of the grid of the drain electrode connection PMOS tube PM12 of pipe NM11 and drain electrode and PM13, PM14, source electrode connecting triode Q5's
Collector；The source electrode of described PMOS tube PM12, PM13, PM14 are all connected with voltage VDD；The drain electrode connection three of the NMOS tube NM15
The base stage of pole pipe Q6 and the drain electrode of PMOS tube PM13, source electrode ground connection, grid connect drain electrode and the resistance R10 of PMOS tube PM14
One end, the other end ground connection of resistance R10；The emitter of one end connecting triode Q6 of resistance R9, other end ground connection.
When circuit start, the drain current of PM1 has positive temperature coefficient, and constantly charges to capacitor C0, capacitor C0 two
The voltage at end is PTAT voltage, and the drain current for flowing through PM2 is CTAT current, and the voltage increase at the both ends capacitor C0 drives PM2's
Drain current is reduced to 0, and start-up circuit stops working.In reference voltage generating circuit, the transmitting junction of triode Q3 and Q4
Product is than being 8: 1, and the electric current for flowing through resistance R7 is PTAT current, and the electric current for flowing through resistance R8 is equal with the electric current of R7, meanwhile, three poles
The VBE voltage of pipe Q4 is CTAT voltage, and the value according to each resistance of the functional relation reasonable set of output voltage and temperature is
The output voltage VREF of zero-temperature coefficient can be obtained.In above-mentioned temperature-compensation circuit, when temperature is higher, NMOS tube NM11 is used
The collector voltage of triode Q5 is limited, so that the emitter and collector of Q5 is in forward bias condition, works in saturation
Area, and PTAT voltage is generated on resistance R5 and R6；Meanwhile the base current of Q5 is PTAT current, high-order nonlinear item can
The high-order nonlinear item of VBE is compensated；When the temperature is low, pressure drop of the function of current of PM14 on resistance R10 is flowed through
Increase with the rising of temperature, and make NM15 work in sub-threshold region, with the rising of temperature, the collector electricity of triode Q6
Stream gradually becomes 0, to realize temperature-compensating well.Simulation result is as shown in Figure 2,3 (respectively in 2.5V, 4V and 5V voltage
Under emulated), wherein when temperature is higher, as the temperature rises, non-linear increase is presented in the base current of Q5, can be supported
Disappear the high-order nonlinear of VBE, and when voltage changes, the amplitude of variation for compensating electric current is smaller；When the temperature is low, triode
Non-linear decline is presented in the collector current of Q6, and until being reduced to 0, the temperature-compensating stage terminates.
As shown in figure 4, the power supply device includes described one kind with temperature the present invention also provides a kind of power supply device
The band gap reference for spending compensation further includes rectification circuit, filter circuit, and the rectification circuit connects filter circuit, described
Filter circuit connects band-gap reference source circuit, the reference source circuit connection load, and the rectification circuit is used for alternating current
Input is converted into direct current, and the filter circuit is used to remove the ripple and noise in DC voltage, so as to be load
More stable output voltage is provided.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (1)
1. a kind of band gap reference with temperature-compensating, which is characterized in that the band gap reference includes four parts: starting
Circuit, operation amplifier circuit, reference voltage generating circuit and compensation circuit, the start-up circuit and the reference voltage generate
Circuit connection simultaneously provides starting voltage, and the compensation circuit connect with the reference voltage generating circuit and provides temperature-compensating；
The start-up circuit includes PMOS tube PM1, PMOS tube PM2 and capacitor C0；The source electrode of PMOS tube PM1 connects voltage VDD, and grid connects
Ground, the grid of drain electrode connection PMOS tube PM2 and one end of capacitor C0, the other end ground connection of capacitor C0, the source electrode of PMOS tube PM2 connect
Meet voltage VDD；The operation amplifier circuit includes PMOS tube PM3, PM4, resistance R3 and triode Q1, Q2, the resistance R3
One end connect voltage VDD, the other end connects the source electrode of PMOS tube PM3, PM4, and the grid of PMOS tube PM3, PM4 is connected and connects
The drain electrode of PM4 and the collector of triode Q2；The collector of the triode Q1 connects the drain electrode of the PM3 and PM2, triode
The emitter of Q1, Q2 are grounded；The reference voltage generating circuit includes resistance R4, R5, R6, R7, R8, R1, R11, further includes
NMOS tube NM10 and triode Q3, Q4；The compensation circuit includes PMOS tube PM12, PM13, PM14, NMOS tube NM11, NM15,
Triode Q5, Q6 and resistance R2, R9, R10；One end of the resistance R4 connects voltage VDD, and the other end connects NMOS tube
The drain electrode of NM10, the grid of the NM10 connect the drain electrode of the PM3, output end and connection of the source electrode as output voltage VREF
One end of resistance R5, the grid of the other end connection NMOS tube NM11 of resistance R5 and the one end for connecting resistance R6, resistance R6's is another
One end connects one end of resistance R7, R8 and the base stage of triode Q4, Q5；The collector connection resistance R7's of triode Q3 is another
The base stage of end and triode Q1, base stage, the other end of resistance R8 and the collector of Q4 of base stage connecting triode Q2, transmitting
Pole connects the emitter of Q4 and one end of resistance R1, one end of the other end connection resistance R11 of resistance R1 and triode Q6
Collector, resistance R11 the other end ground connection；The emitter of one end connecting triode Q5 of the resistance R2, other end ground connection；
The grid of the grid of the drain electrode connection PMOS tube PM12 of the NMOS tube NM11 and drain electrode and PM13, PM14, source electrode connection three
The collector of pole pipe Q5；The source electrode of described PMOS tube PM12, PM13, PM14 are all connected with voltage VDD；The leakage of the NMOS tube NM15
The base stage of pole connecting triode Q6 and the drain electrode of PMOS tube PM13, source electrode ground connection, grid connect PMOS tube PM14 drain electrode and
One end of resistance R10, the other end ground connection of resistance R10；The emitter of one end connecting triode Q6 of resistance R9, another termination
Ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810003219.5A CN108196614B (en) | 2018-01-03 | 2018-01-03 | A kind of band gap reference and power supply device with temperature-compensating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810003219.5A CN108196614B (en) | 2018-01-03 | 2018-01-03 | A kind of band gap reference and power supply device with temperature-compensating |
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| CN108196614A CN108196614A (en) | 2018-06-22 |
| CN108196614B true CN108196614B (en) | 2019-06-04 |
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| CN115373459B (en) * | 2022-08-12 | 2023-08-29 | 北京伽略电子股份有限公司 | Low-temperature drift band gap reference circuit |
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| JP2008516328A (en) * | 2004-10-08 | 2008-05-15 | フリースケール セミコンダクター インコーポレイテッド | Reference circuit |
| CN201000586Y (en) * | 2006-12-28 | 2008-01-02 | 东南大学 | CMOS reference source circuit |
| CN101950191B (en) * | 2010-09-16 | 2012-05-09 | 电子科技大学 | Voltage reference source with high-order temperature compensation circuit |
| CN105912064B (en) * | 2016-04-25 | 2018-02-27 | 华中科技大学 | A kind of band gap reference of high-precision high PSRR |
| CN107368143B (en) * | 2017-08-29 | 2018-07-17 | 电子科技大学 | A kind of reference voltage source of low-power consumption |
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Effective date of registration: 20190513 Address after: 510000 No. 3 Daxing Bridge Road, Changsha Pu, Zhongluotan Town, Baiyun District, Guangzhou City, Guangdong Province Applicant after: HELLY TECHNOLOGY (GUANGZHOU) CO., LTD. Address before: 710000 College of Electronic Engineering, Xi'an University of Electronic Science and Technology, No. 266 Xinglong Section of Xifeng Road, Xi'an City, Shaanxi Province Applicant before: He Jinchang |
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