CN108419448B - 用于晶片边缘检验及复检的方法及系统 - Google Patents

用于晶片边缘检验及复检的方法及系统 Download PDF

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Publication number
CN108419448B
CN108419448B CN201680045818.2A CN201680045818A CN108419448B CN 108419448 B CN108419448 B CN 108419448B CN 201680045818 A CN201680045818 A CN 201680045818A CN 108419448 B CN108419448 B CN 108419448B
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guard ring
sample
electron
ring device
height
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Chinese (zh)
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CN108419448A (zh
Inventor
姜辛容
C·西尔斯
H·辛哈
D·特雷斯
叶伟
D·卡兹
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1532—Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1536—Image distortions due to scanning

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201680045818.2A 2015-08-10 2016-08-10 用于晶片边缘检验及复检的方法及系统 Active CN108419448B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010668841.5A CN111785602B (zh) 2015-08-10 2016-08-10 用于晶片边缘检验及复检的方法及系统

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562203276P 2015-08-10 2015-08-10
US62/203,276 2015-08-10
US15/231,728 US10056224B2 (en) 2015-08-10 2016-08-08 Method and system for edge-of-wafer inspection and review
US15/231,728 2016-08-08
PCT/US2016/046287 WO2017027558A1 (en) 2015-08-10 2016-08-10 Method and system for edge-of-wafer inspection and review

Related Child Applications (1)

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CN202010668841.5A Division CN111785602B (zh) 2015-08-10 2016-08-10 用于晶片边缘检验及复检的方法及系统

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CN108419448B true CN108419448B (zh) 2020-08-04

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US (2) US10056224B2 (cg-RX-API-DMAC7.html)
JP (1) JP6854278B2 (cg-RX-API-DMAC7.html)
KR (1) KR102315789B1 (cg-RX-API-DMAC7.html)
CN (2) CN108419448B (cg-RX-API-DMAC7.html)
IL (2) IL256858B (cg-RX-API-DMAC7.html)
SG (1) SG10201913242YA (cg-RX-API-DMAC7.html)
TW (2) TWI754599B (cg-RX-API-DMAC7.html)
WO (1) WO2017027558A1 (cg-RX-API-DMAC7.html)

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KR102449594B1 (ko) 2017-09-04 2022-10-04 에이에스엠엘 네델란즈 비.브이. 전자 빔 검사 장치 스테이지 위치설정
WO2019071054A1 (en) 2017-10-04 2019-04-11 The Broad Institute, Inc. METHODS AND COMPOSITIONS FOR MODIFYING THE FUNCTION AND STRUCTURE OF BUCKLES AND / OR CHROMATIN DOMAINS
US12171783B2 (en) 2017-11-13 2024-12-24 The Broad Institute, Inc. Methods and compositions for targeting developmental and oncogenic programs in H3K27M gliomas
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US12402610B2 (en) 2018-11-09 2025-09-02 The Broad Institute, Inc. Methods and compositions for modulating innate lymphoid cell pathogenic effectors
US11739156B2 (en) 2019-01-06 2023-08-29 The Broad Institute, Inc. Massachusetts Institute of Technology Methods and compositions for overcoming immunosuppression
US11600497B2 (en) 2019-04-06 2023-03-07 Kla Corporation Using absolute Z-height values for synergy between tools
EP3953960A1 (en) 2019-04-10 2022-02-16 ASML Netherlands B.V. Stage apparatus suitable for a particle beam apparatus
JP7344047B2 (ja) * 2019-08-22 2023-09-13 株式会社ジェーイーエル 基板の位置合わせ方法
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CA3203046A1 (en) 2020-12-22 2022-06-30 Helmholtz Zentrum Muenchen - Deutsches Forschungszentrum Fur Gesundheit Und Umwelt (Gmbh) Application of crispr/cas13 for therapy of rna virus and/or bacterium induced diseases
EP4102536A1 (en) * 2021-06-10 2022-12-14 ASML Netherlands B.V. Method of compensating for an effect of electrode distortion, assessment system
TWI872403B (zh) * 2022-12-05 2025-02-11 易發精機股份有限公司 用於晶圓的自動光學檢測系統及其影像處理方法
CN117276112B (zh) * 2023-11-22 2024-04-12 宁德时代新能源科技股份有限公司 缺陷检测方法、装置、设备及计算机可读存储介质

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Also Published As

Publication number Publication date
JP6854278B2 (ja) 2021-04-07
US10770258B2 (en) 2020-09-08
KR102315789B1 (ko) 2021-10-20
US20170047193A1 (en) 2017-02-16
TWI735458B (zh) 2021-08-11
CN108419448A (zh) 2018-08-17
US20190006143A1 (en) 2019-01-03
WO2017027558A1 (en) 2017-02-16
IL285052B (en) 2022-03-01
KR20180030236A (ko) 2018-03-21
CN111785602A (zh) 2020-10-16
IL256858A (en) 2018-03-29
TW201715225A (zh) 2017-05-01
SG10201913242YA (en) 2020-03-30
CN111785602B (zh) 2021-09-03
IL285052A (en) 2021-08-31
JP2018526778A (ja) 2018-09-13
IL256858B (en) 2021-09-30
TW202138799A (zh) 2021-10-16
US10056224B2 (en) 2018-08-21
TWI754599B (zh) 2022-02-01

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