CN108388036B - 一种用于修复玻璃基板的材料、用于修复玻璃基板的方法和阵列基板的制造方法 - Google Patents

一种用于修复玻璃基板的材料、用于修复玻璃基板的方法和阵列基板的制造方法 Download PDF

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CN108388036B
CN108388036B CN201810177550.9A CN201810177550A CN108388036B CN 108388036 B CN108388036 B CN 108388036B CN 201810177550 A CN201810177550 A CN 201810177550A CN 108388036 B CN108388036 B CN 108388036B
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glass substrate
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CN108388036A (zh
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张东徽
尹浩
陈川
马小叶
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本发明涉及一种用于修复玻璃基板的材料、用于修复玻璃基板的方法和阵列基板的制造方法。所述材料包括SiO2溶胶。用于修复玻璃基板的方法包括：至少在所述玻璃基板的凹坑处涂覆第一溶胶材料，其中，所述第一溶胶材料包括SiO2溶胶；以及干燥所述第一溶胶材料。

Description

一种用于修复玻璃基板的材料、用于修复玻璃基板的方法和 阵列基板的制造方法
技术领域
本发明的实施例涉及玻璃基板技术领域，更特别地，涉及一种用于修复玻璃基板的材料、用于修复玻璃基板的方法和阵列基板的制造方法。
背景技术
TFT-LCD(Thin Film Transistor-Liquid Crystal Display)显示器通常采用玻璃基板。在显示器的制造过程中，需要尽可能地保持玻璃基板的表面平坦，从而确保能够在玻璃基板上形成高质量的膜层。
发明内容
本发明的实施例提供了一种用于修复玻璃基板的材料、用于修复玻璃基板的方法和阵列基板的制造方法，能够降低形成在玻璃基板上的导电层发生开路不良的可能性，并改善玻璃基板的光学性能。
根据本发明的第一方面，提供一种用于修复玻璃基板的材料。该材料包括SiO2溶胶。
在本发明的实施例中，所述SiO2溶胶中的SiO2浓度为0.01g/ml。
在本发明的实施例中，所述SiO2溶胶通过将无水乙醇、氨水和正硅酸乙酯混合而制备。
在本发明的实施例中，氨水与正硅酸乙酯的摩尔比为4:1。
根据本发明的第二方面，提供一种用于修复玻璃基板的方法。该方法包括：至少在所述玻璃基板的凹坑处涂覆第一溶胶材料，所述第一溶胶材料包括SiO2溶胶；以及干燥所述第一溶胶材料。
在本发明的实施例中，所述SiO2溶胶中的SiO2浓度为0.01g/ml。
在本发明的实施例中，所述SiO2溶胶通过将无水乙醇、氨水和正硅酸乙酯混合而制备。
在本发明的实施例中，氨水与正硅酸乙酯的摩尔比为4:1。
在本发明的实施例中，所述SiO2溶胶中的SiO2胶粒带负电。
在本发明的实施例中，所述SiO2溶胶的pH值为7.5。
在本发明的实施例中，所述方法还包括：在涂覆所述第一溶胶材料之前，在待涂覆所述第一溶胶材料的位置处涂覆第二溶胶材料。所述第二溶胶材料包括带正电的胶粒。
在本发明的实施例中，所述带正电的胶粒包括碱金属阳离子。
在本发明的实施例中，所述带正电的胶粒包括聚苯乙烯磺酸钠胶粒。
在本发明的实施例中，所述干燥的温度为250℃。
根据本发明的第三方面，提供一种阵列基板的制造方法，该方法包括在本发明的第二方面中描述的用于修复玻璃基板的方法。
适应性的进一步的方面和范围从本文中提供的描述变得明显。应当理解，本申请的各个方面可以单独或者与一个或多个其他方面组合实施。还应当理解，本文中的描述和特定实施例旨在仅说明的目的并不旨在限制本申请的范围。
附图说明
本文中描述的附图用于仅对所选择的实施例的说明的目的，并不是所有可能的实施方式，并且不旨在限制本申请的范围，其中：
图1是示出根据本发明的实施例的用于修复玻璃基板的方法的流程图；
图2a至2b是示出根据本发明的实施例的在玻璃基板上形成溶胶材料的示意图；
图3是示出根据本发明的实施例的用于修复玻璃基板的方法的流程图；
图4a至4c是示出根据本发明的实施例的在玻璃基板上形成溶胶材料的示意图；
图5是示出在一种玻璃基板上形成导电层的示意图；以及
图6是示出在根据本发明的实施例的玻璃基板上形成导电层的示意图。
贯穿这些附图的各个视图，相应的参考编号指示相应的部件或特征。
具体实施方式
首先，需要说明的是，除非上下文中另外明确地指出，否则在本文和所附权利要求中所使用的词语的单数形式包括复数，反之亦然。因而，当提及单数时，通常包括相应术语的复数。相似地，措辞“包含”和“包括”将解释为包含在内而不是独占性地。同样地，术语“包括”和“或”应当解释为包括在内的，除非本文中另有说明(翻译与下面不一样，需注意)。在本文中使用术语“实例”之处，特别是当其位于一组术语之后时，所述“实例”仅仅是示例性的和阐述性的，且不应当被认为是独占性的或广泛性的。
此外，还需要说明的是，当介绍本申请的元素及其实施例时，冠词“一”、“一个”、“该”和“所述”旨在表示存在一个或者多个要素；除非另有说明，“多个”的含义是两个或两个以上；用语“包含”、“包括”、“含有”和“具有”旨在包括性的并且表示可以存在除所列要素之外的另外的要素；术语“第一”、“第二”、“第三”等仅用于描述的目的，而不能理解为指示或暗示相对重要性及形成顺序。
本发明中描绘的流程图仅仅是一个例子。在不脱离本发明精神的情况下，可以存在该流程图或其中描述的步骤的很多变型。例如，所述步骤可以以不同的顺序进行，或者可以添加、删除或者修改步骤。这些变型都被认为是所要求保护的方面的一部分。
现将参照附图更全面地描述示例性的实施例。
本发明的实施例提供了一种用于修复玻璃基板的材料，能够例如修复玻璃基板表面的凹坑，从而能够降低形成在玻璃基板上的导电层发生开路不良的可能性，并改善玻璃基板的光学性能。
在本发明的示例性实施例中，用于修复玻璃基板的材料包括SiO2溶胶。
在本发明的示例性实施例中，SiO2溶胶通过将无水乙醇、氨水和正硅酸乙酯混合而制备。需要说明的是，无水乙醇作为溶剂，氨水作为催化剂。化学反应式如式(1)所示。
(C2H5O)4Si+2H2O＝4C2H5OH+SiO2 (1)
在本发明的示例性实施例中，氨水与正硅酸乙酯的摩尔比为4:1。
在制备好上述混合溶液之后，利用乙醇水溶液将SiO2溶胶中的SiO2浓度调节至0.01g/ml。
接下来描述根据本发明的一个实施例的用于修复玻璃基板的方法。
图1是示出根据本发明的实施例的用于修复玻璃基板的方法的流程图。图2a至2b是示出根据本发明的实施例的在玻璃基板上形成第一溶胶材料的示意图。
如图1中的S11和图2a所示，在玻璃基板201上涂覆第一溶胶材料202，其中，第一溶胶材料202包括SiO2溶胶。具体地，玻璃基板201的表面具有凹坑200。至少在玻璃基板201的凹坑200处涂覆第一溶胶材料202。可选地，如图2a所示，在玻璃基板201的表面上以及凹坑200处涂覆第一溶胶材料202。由于在凹坑拐角处的膜生长速率高于其他部分的膜生长速率，因此能够有效降低凹坑边缘区域的高度差。
如图1中的S11和图2b所示，干燥第一溶胶材料202，以至少部分平坦化凹坑200，从而使修复后的玻璃基板的表面与修复前的玻璃基板的表面相比更平坦。
在图2b中，第一溶胶材料202在干燥后形成SiO2层。
在本发明的示例性实施例中，干燥的温度为约250℃。
接下来，将描述根据本发明的另一个实施例的用于修复玻璃基板的方法。
图3是示出根据本发明的实施例的用于修复玻璃基板的方法的流程图。图4a至4c是示出根据本发明的实施例的在玻璃基板上形成第一和第二溶胶材料的示意图。
在该实施例中，采用胶粒带负电的SiO2溶胶作为第一溶胶材料，相应地，在如图1所示的实施例的基础上，图3中的方法在步骤S11之前还包括涂覆具有带正电的胶粒的第二溶胶材料的可选的步骤S10。
由于玻璃基板表面存在容易与带正电的胶粒结合的羟基，因此先涂覆包括带正电胶粒的溶胶然后再涂覆包括带负电胶粒的溶胶，有助于修复材料附着到玻璃基板的表面，具体地，在该实施例中，有助于SiO2溶胶更好地附着到玻璃基板的表面。
进一步地，带正电粒胶粒可以包括碱金属阳离子。带负电的SiO2胶粒能够与这样的带正电胶粒进一步反应生成硅酸盐。与SiO2相比，该硅酸盐与玻璃基板的成分更接近，从而能够更有效地修复玻璃基板。
下面详细描述本发明的具体实施例。
如图3中的S10和图4a所示，在涂覆第一溶胶材料(图4a中未示出)之前，在待涂覆第一溶胶材料的位置处涂覆包括带正电的胶粒的第二溶胶材料203，作为示例，带正电的胶粒包括碱金属阳离子。具体地，玻璃基板201的表面具有凹坑200。至少在玻璃基板201的凹坑200处涂覆该第二溶胶材料203。可选地，如图4a所示，在玻璃基板201的表面上以及凹坑200处涂覆第二溶胶材料203。
在本发明的示例性实施例中，第二溶胶材料203包括聚苯乙烯磺酸钠(Na PSS)溶胶。该Na PSS溶胶通过如下方式获得：将Na PSS和水混合制得质量分数为20％的Na PSS水溶液；然后通过添加HCl将该水溶液的pH值调节至7。
如图3中的S11和图4b所示，在第二溶胶材料203上涂覆第一溶胶材料202。
在该实施例中，为了使SiO2溶胶中的SiO2胶粒带负电，作为示例，可以使用氨水将SiO2溶胶的pH值调节至7.5。具体地，SiO2表面发生水合反应后生成阴离子，该阴离子附着在SiO2颗粒周围，从而形成带负电的SiO2胶粒，具体化学反应式如式(2)和(3)所示。
SiO2+H2O＝H2SiO3 (2)
NH3·H2O+H2SiO3＝HSiO3 -+NH4 ++H2O (3)
在涂覆第一溶胶材料202之后，第一溶胶材料202中的SiO2与第二溶胶材料203中的聚苯乙烯磺酸钠反应生成与玻璃基板的成分接近的硅酸盐，Na2SiO3(化学反应式如式(4)所示)。
xSiO2+19xO2+2(C8H7NaO3S)x＝xNa2SiO3+2xSO2+16xCO2+7xH2O (4)
如图3中的S12和图4c所示，干燥第一溶胶材料202和第二溶胶材料203，得到最终的硅酸盐层204。
在本发明的示例性实施例中，干燥的温度为约250℃。
在本发明的实施例中，还提供了一种阵列基板的制造方法，其包括上述用于修复基板的方法。
图5是示出在一种玻璃基板上形成导电层的示意图。图6是示出在根据本发明的实施例的玻璃基板上形成导电层的示意图。
如图5所示，在未修复的玻璃基板201上形成导电层205时，由于玻璃基板201的表面上存在凹坑200，导电层205在凹坑200的边缘处会造成断裂。
如图6所示，在根据本发明的实施例的修复后的玻璃基板201上形成导电层205时，由于使用第一溶胶材料202或使用第一和第二溶胶材料202、203平坦化凹坑200，减小了基板在凹坑边缘处的高度差，从而能够形成连续的导电层205。
在本发明的示例性实施例中，导电层205例如可以为栅极层或源漏电极层。
本发明的实施例提供了一种用于修复玻璃基板的材料、用于修复玻璃基板的方法和阵列基板的制造方法，能够修复玻璃基板表面的凹坑，特别地，能够有效减小玻璃基板在凹坑边缘处的高度差，从而能够降低形成在玻璃基板上的诸如导电层等的材料层在凹坑边缘处发生断裂的可能性，并改善玻璃基板的光学性能。
以上为了说明和描述的目的提供了实施例的前述描述。其并不旨在是穷举的或者限制本申请。特定实施例的各个元件或特征通常不限于特定的实施例，但是，在合适的情况下，这些元件和特征是可互换的并且可用在所选择的实施例中，即使没有具体示出或描述。同样也可以以许多方式来改变。这种改变不能被认为脱离了本申请，并且所有这些修改都包含在本申请的范围内。

Claims (8)

1.一种用于修复玻璃基板的方法，包括：
至少在所述玻璃基板的凹坑处涂覆第一溶胶材料，其中，所述第一溶胶材料包括SiO2溶胶，所述SiO2溶胶中的SiO2胶粒带负电；以及
干燥所述第一溶胶材料，
其中，所述SiO2溶胶通过将无水乙醇、氨水和正硅酸乙酯混合而制备，
所述方法还包括：在涂覆所述第一溶胶材料之前，在待涂覆所述第一溶胶材料的位置处涂覆第二溶胶材料，其中，所述第二溶胶材料包括带正电的胶粒。
2.根据权利要求1所述的方法，其中，所述SiO2溶胶中的SiO2浓度为0.01g/ml。
3.根据权利要求2所述的方法，其中，氨水与正硅酸乙酯的摩尔比为4:1。
4.根据权利要求1所述的方法，其中，所述SiO2溶胶的pH值为7.5。
5.根据权利要求1所述的方法，其中，所述带正电的胶粒包括碱金属阳离子。
6.根据权利要求1所述的方法，其中，所述带正电的胶粒包括聚苯乙烯磺酸钠胶粒。
7.根据权利要求1所述的方法，其中，所述干燥的温度为250℃。
8.一种阵列基板的制造方法，包括权利要求1至7中任一项所述的用于修复玻璃基板的方法。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104802249A (zh) * 2015-05-06 2015-07-29 东北林业大学 智能温度响应性超疏水-亲水木材的制备方法
CN104998629A (zh) * 2015-06-11 2015-10-28 福建农林大学 一种核-壳结构SiO2-TiO2复合纳米材料及其制备方法和应用
CN105599077A (zh) * 2015-12-18 2016-05-25 中国林业科学研究院木材工业研究所 一种基于溶凝胶法制备超疏水木材的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4384073A (en) * 1981-12-11 1983-05-17 Owens-Corning Fiberglas Corporation Cationic alkenyl azabenzene chemically modified asphalts
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
CN105776883A (zh) * 2014-12-24 2016-07-20 北京有色金属研究总院 一种二氧化硅颗粒成膜制备减反射膜的方法
KR101632637B1 (ko) * 2015-02-03 2016-06-24 주식회사 코윈디에스티 전도성 잉크를 사용하는 디스플레이 수리 장치 및 방법
CN106587652B (zh) * 2016-12-07 2020-01-21 英诺激光科技股份有限公司 一种玻璃表面激光切割损伤的修复方法
CN107629760B (zh) * 2017-04-25 2021-03-05 中国科学院宁波材料技术与工程研究所 一种透明防雾剂及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104802249A (zh) * 2015-05-06 2015-07-29 东北林业大学 智能温度响应性超疏水-亲水木材的制备方法
CN104998629A (zh) * 2015-06-11 2015-10-28 福建农林大学 一种核-壳结构SiO2-TiO2复合纳米材料及其制备方法和应用
CN105599077A (zh) * 2015-12-18 2016-05-25 中国林业科学研究院木材工业研究所 一种基于溶凝胶法制备超疏水木材的方法

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