CN108336099A - 显示基板及其制备方法、显示装置 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 98
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000009413 insulation Methods 0.000 claims abstract description 66
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000010410 layer Substances 0.000 claims description 150
- 238000000034 method Methods 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 11
- -1 polyethylene naphthalate Polymers 0.000 claims description 10
- 239000004697 Polyetherimide Substances 0.000 claims description 8
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 8
- 229920000058 polyacrylate Polymers 0.000 claims description 8
- 229920001601 polyetherimide Polymers 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229920008347 Cellulose acetate propionate Polymers 0.000 claims description 6
- 239000004425 Makrolon Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229920000515 polycarbonate Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
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- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims 2
- 239000011112 polyethylene naphthalate Substances 0.000 claims 2
- HBGGXOJOCNVPFY-UHFFFAOYSA-N diisononyl phthalate Chemical compound CC(C)CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC(C)C HBGGXOJOCNVPFY-UHFFFAOYSA-N 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 229920000570 polyether Polymers 0.000 claims 1
- 150000003457 sulfones Chemical class 0.000 claims 1
- 208000037656 Respiratory Sounds Diseases 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000001259 photo etching Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- AVMNFQHJOOYCAP-UHFFFAOYSA-N acetic acid;propanoic acid Chemical compound CC(O)=O.CCC(O)=O AVMNFQHJOOYCAP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
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- 239000011241 protective layer Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开一种显示基板及其制备方法、显示装置,所述显示基板包括引线弯折区;在所述引线弯折区,所述显示基板包括基底及层叠设置在所述基底上的无机绝缘层和金属层;其中,所述金属层包括多条分立的金属引线,所述金属引线在所述基底上的正投影覆盖所述无机绝缘层在所述基底上的正投影。在显示基板的引线弯折区,分立的金属引线在基底上的正投影覆盖无机绝缘层在基底上的正投影,金属引线在靠近基底的一侧的正下方具有无机绝缘层,而在金属引线区域外不具有无机绝缘层,这样,阻断了金属引线断裂的裂纹沿无机绝缘层扩展的路径,有效的避免了裂纹蔓延导致更多金属引线断裂的问题。
Description
技术领域
本发明涉及显示技术领域,特别是涉及一种显示基板及其制备方法、显示装置。
背景技术
随着全屏无边框技术的发展,显示面板的各个边框越来越窄,通常采用引线弯折(Pad Bending)技术将显示面板的非显示部分弯折到显示面板的背面,实现显示面板的窄边框,但是由于弯折角度较大,在弯折过程中,在引线弯折区容易引发引线断,裂纹会沿引线层下方区域向其他引线端蔓延,导致更多引线断裂,引起显示不良。
发明内容
本发明提供了一种显示基板及制备方法、显示装置,以解决现有技术中引线弯折区的裂纹易蔓延的问题。
第一方面,本发明提供一种显示基板,包括引线弯折区;
在所述引线弯折区,所述显示基板包括基底及层叠设置在所述基底上的无机绝缘层和金属层;
其中,所述金属层包括多条分立的金属引线,所述金属引线在所述基底上的正投影覆盖所述无机绝缘层在所述基底上的正投影。
可选地,所述基底为柔性基底。
可选地,所述基底的材质包括:聚酰亚胺、聚醚砜、聚丙烯酸酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚芳酯、聚碳酸酯、乙酸丙酸纤维素中的至少一种。
可选地,所述无机绝缘层的厚度为
可选地,所述无机绝缘层的材质包括:氧化硅、氮化硅、当氧化硅中的至少一种。
第二方面,本发明还提供了一种显示基板的制备方法,包括:
在引线弯折区的基底上依次形成无机绝缘层和金属层;
采用第一掩膜版,通过构图工艺在金属层形成多条分立的金属引线;
去除引线弯折区内金属引线区域外的无机绝缘层。
可选地,所述去除引线弯折区内金属引线区域外的无机绝缘层,包括:
采用第二掩膜版,通过构图工艺去除引线弯折区内金属引线区域外的无机绝缘层。
可选地,所述采用第一掩膜版,通过构图工艺在金属层形成多条分立的金属引线,包括:
采用第一掩膜版对金属层利用第一刻蚀工艺,刻蚀形成多条分立的金属引线;
所述去除引线弯折区内金属引线区域外的无机绝缘层,包括:
利用第二刻蚀工艺,刻蚀去除引线弯折区内金属引线区域外的无机绝缘层。
可选地,所述在引线弯折区的基底上依次形成无机绝缘层和金属层,包括:
提供基底;
在基底上形成多层绝缘层;
对引线弯折区的多层绝缘层进行图案化处理,形成所述无机绝缘层;
形成金属层。
可选地,所述在基底上形成多层绝缘层,包括:
在基底上依次形成缓冲层、第一绝缘层、第二绝缘层、层间绝缘层;
所述对引线弯折区的多层绝缘层进行图案化处理,形成所述无机绝缘层,包括:
刻蚀去除引线弯折区的层间绝缘层、第二绝缘层和第一绝缘层;
对引线弯折区的缓冲层进行部分刻蚀,形成所述无机绝缘层。
可选地,所述基底为柔性基底。
可选地,所述基底的材质包括:聚酰亚胺、聚醚砜、聚丙烯酸酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚芳酯、聚碳酸酯、乙酸丙酸纤维素中的至少一种。
可选地,所述缓冲层的材质包括:氧化硅、氮化硅、氮氧化硅中的至少一种。
第三方面,本发明还提供了一种显示装置,包括上述显示基板。
与现有技术相比,本发明实施例具有以下优点:
本发明实施例的显示基板,包括引线弯折区,在引线弯折区,分立的金属引线在基底上的正投影覆盖无机绝缘层在基底上的正投影,金属引线在靠近基底的一侧的正下方具有无机绝缘层,而在金属引线区域外不具有无机绝缘层,这样,阻断了金属引线断裂的裂纹沿无机绝缘层扩展的路径,有效的避免了裂纹蔓延导致更多金属引线断裂的问题。
附图说明
图1为现有技术的显示基板的结构示意图;
图2为图1的A'部放大示意图;
图3为图2的a'-b'截面示意图;
图4为图2的c'-d'截面示意图;
图5为本发明实施例的显示基板的结构示意图;
图6为图5的A部放大示意图;
图7为图6的a-b截面示意图;
图8为图6的c-d截面示意图;
图9为本发明实施例的一种显示基板的制备方法流程图;
图10为本发明实施例的另一种显示基板的制备方法流程图;
图11为本发明实施例的在引线弯折区形成无机绝缘层和金属层的方法流程图;
图12a~d为显示基板的制备过程中形成的显示基板的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获取的所有其他实施例,都属于本发明保护的范围。
随着全屏无边框技术的发展,为了缩短显示面板的边框,如图1所示,通常需要将显示面板边缘的bending区域,弯折到显示面板的背面,图2中示出了bending区域的A'部放大示意图,如图2所示,该区域包括形成在基底上的绝缘层以及形成在绝缘层上的多条分立的金属引线,其中,在引线弯折区1'处的结构与该区域两侧的层结构不同,该金属引线的a'-b'截面图如图3所示,金属引线之间的c'-d'截面图如图4所示。该引线弯折区1'的一侧与显示面板的显示区连接,另一侧与弯折至显示面板背面的驱动电路部分连接。该引线弯折区1'两侧连接显示区和驱动电路部分,基底上均形成有多层绝缘层,而在引线弯折区1'部分,绝缘层只保留最靠近基底的一部分,也即在引线弯折区1'处形成一凹槽,然后再在该结构的绝缘层上形成金属引线,以及形成覆盖在金属引线上的有机绝缘保护层等。
然而,在弯折过程中,引线弯折区1'的金属引线易断裂,且裂纹沿引线下方的无机绝缘层12'向其他引线端蔓延,导致更多引线断裂,引起显示不良。
为了解决上述问题,本发明实施例提供了一种显示基板,参照图5-8所示,该显示基板包括引线弯折区1,在引线弯折区1内,该显示基板包括基底11及层叠设置在基底11上的无机绝缘层12和金属层。其中,金属层包括多条分立的金属引线13,金属引线13在基底11上的正投影覆盖无机绝缘层12在基底上的正投影。
本发明实施例的显示基板,在引线弯折区1内,分立的金属引线13在基底11上的正投影覆盖无机绝缘层12在基底11上的正投影,参照图7、图8所示,金属引线13在靠近基底11的一侧的正下方具有无机绝缘层12,而在金属引线11区域外不具有无机绝缘层。由于金属引线13的断裂是由其下方的无机绝缘层12断裂导致的,本发明实施例中,在金属引线13区域外不设置无机绝缘层,阻断了金属引线13断裂的裂纹沿无机绝缘层12扩展的路径,有效的避免了裂纹蔓延导致更多金属引线13断裂的问题。
具体的,上述基底11为柔性基底,以便于其在引线弯折区1进行弯折,其材质可以包括:聚酰亚胺(PI)、聚醚砜(PES)、聚丙烯酸酯(PAR)、聚醚酰亚胺(PEI)、聚萘二甲酸乙二醇酯(PEN)、聚对苯二甲酸乙二醇酯(PET)、聚苯硫醚(PPS)、聚芳酯、聚碳酸酯(PC)、乙酸丙酸纤维素(CAP)中的至少一种。例如,柔性基底可以由上下层两层PI层和中间的无机薄膜层复合而成,对于基底11的具体结构,本发明不做限制。
上述引线弯折区1内,无机绝缘层12的厚度为既可以保证无机绝缘层12的弯折性,又可以保证其绝缘性能。其材质可以包括氮化硅、氧化硅、氮氧化硅中的至少一种。
可以理解的是,在金属层远离基底11的一侧还设置有其他层结构,考虑到有机绝缘材料的可弯折性较强,不易断裂,在金属层远离基底11的一侧通常设置有机绝缘层。如图7、图8所示,在金属引线13的上方还形成有有机绝缘层14,以对金属引线13进行保护。有机绝缘层14的材质可以包括:聚酰亚胺、亚克力、苯并环丁烯(BCB)、六甲基二硅氧烷中的至少一种。
本发明实施例还提供了一种显示基板的制备方法,参照图9所示,包括如下步骤:
步骤100,在引线弯折区的基底上依次形成无机绝缘层和金属层。
步骤200,采用第一掩膜版,通过构图工艺在金属层形成多条分立的金属引线。
对金属层进行刻蚀,形成分立的金属引线,经过该步骤形成的引线弯折区的显示基板的结构示意图参照图12a所示,该图为引线弯折区的沿图6的X方向的截面示意图,对于其具体的刻蚀方法本发明不做限制,可以为干法刻蚀也可以为湿法刻蚀。
步骤300,去除引线弯折区内金属引线区域外的无机绝缘层。
经过该步骤后,形成的引线弯折区的显示基板的X方向的截面图参照图12b所示。
在本发明实施例中,对于在引线弯折区的基底上形成无机绝缘层和金属层的具体工艺,以及采用第一掩膜版,通过构图工艺在金属层形成多条分立的金属引线的具体工艺,本发明不做限制,只要在上述两个步骤之后,去除引线弯折区内金属引线区域外的无机绝缘层即可。
经过上述步骤,去除了引线弯折区内金属引线区域外的无机绝缘层,阻断了裂纹扩展的路径,可以有效避免裂纹蔓延导致更多金属引线断裂的问题。可以理解的是,在步骤300后,还需要形成显示基板的其他层结构,后续过程为常规工艺,在此不再赘述。
需要说明的是,本发明中涉及的构图工艺可以包括光刻工艺及刻蚀步骤。光刻工艺包括成膜、曝光、显影等工艺过程,利用光刻胶、掩膜版、曝光机等形成图形的工艺;刻蚀可以为干法刻蚀也可以为湿法刻蚀,同时还可以包括打印、喷墨等其他用于形成预定图形的工艺。可以根据本发明所形成的结构选择相应的构图工艺。
在一具体实施例中,上述步骤300,去除引线弯折区内金属引线区域外的无机绝缘层,可以包括:采用第二掩膜版,通过构图工艺去除引线弯折区内金属引线区域外的无机绝缘层。
具体工艺可以为,在金属层上涂覆光刻胶,采用第二掩膜版,对引线弯折区进行曝光、显影、刻蚀等工艺,刻蚀去除引线弯折区内金属引线区域外的无机绝缘层。
在另一具体实施例中,参照图10所示,包括如下步骤:
步骤100,在引线弯折区的基底上依次形成无机绝缘层和金属层。
步骤201,采用第一掩膜版对金属层利用第一刻蚀工艺,刻蚀形成多条分立的金属引线。
该步骤中的第一刻蚀工艺可以为干法刻蚀或湿法刻蚀工艺,利用刻蚀工艺刻蚀金属层,形成多条分立的金属引线。例如,可以采用干法刻蚀工艺,利用氯气对金属层进行刻蚀,形成多条分立的金属引线。
可以理解的是,上述步骤还包括:涂覆光刻胶、曝光、显影等过程,在此不再赘述。经过该步骤后,形成的引线弯折区的显示基板的结构图参照图12c所示,在基底11上依次形成有无机绝缘层12、金属引线13和光刻胶层15。
步骤301,利用第二刻蚀工艺,刻蚀去除引线弯折区内金属引线区域外的无机绝缘层。
该步骤中,更换刻蚀方法(如:更换刻蚀气体),对上述步骤201形成的结构进行第二次刻蚀,本次刻蚀采用第二刻蚀工艺刻蚀,对金属引线区域外的无机绝缘层进行刻蚀,去除引线弯折区的无机绝缘层。该第二刻蚀工艺可以为干法刻蚀工艺,例如利用四氟化碳和氧气以一定配比混合对无机绝缘层进行刻蚀,去除引线弯折区内金属引线区域外的无机绝缘层。
刻蚀完成后,去除在上述两步骤中涂覆的光刻胶,形成图12b的结构。
参照图11,上述实施例的步骤100具体可以包括如下步骤:
步骤101,提供基底。
步骤102,在基底上形成多层绝缘层。
该步骤具体可以包括,在基底上依次形成缓冲层、第一绝缘层、第二绝缘层、层间绝缘层。
步骤103,对引线弯折区的多层绝缘层进行图案化处理,形成所述无机绝缘层。
该步骤具体可以分两次刻蚀,对多层绝缘层进行图案化处理,先刻蚀去除弯折区的层间绝缘层、第二绝缘层和第一绝缘层;再对弯折区的缓冲层进行部分刻蚀,形成所述无机绝缘层。经过该步骤后,形成的显示基板的引线弯折区的Y方向的截面示意图如图12d所示。可以理解的是,在引线弯折区外还保留有缓冲层21、第一绝缘层22、第二绝缘层23、层间绝缘层24。
步骤104,形成金属层。
上述实施例中,基底为柔性基底,以便于其在引线弯折区进行弯折,其材质可以包括:聚酰亚胺(PI)、聚醚砜(PES)、聚丙烯酸酯(PAR)、聚醚酰亚胺(PEI)、聚萘二甲酸乙二醇酯(PEN)、聚对苯二甲酸乙二醇酯(PET)、聚苯硫醚(PPS)、聚芳酯、聚碳酸酯(PC)、乙酸丙酸纤维素(CAP)中的至少一种。例如,柔性基底可以由上下层两层PI层和中间的无机薄膜层复合而成,对于基底11的具体结构,本发明不做限制。
上述缓冲层的材质包括:氧化硅、氮化硅、氮氧化硅中的至少一种。在引线弯折区内,缓冲层刻蚀剩余部分的无机绝缘层的厚度为既可以保证无机绝缘层的弯折性,又可以保证其绝缘性能。其材质可以包括氮化硅、氧化硅、氮氧化硅中的至少一种。
本发明实施例还提供了一种显示装置,包括上述实施例的显示基板,该显示装置可以为显示面板,也可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、电子纸等任何具有显示功能的产品或部件。
本说明书中的各个实施例均采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似的部分互相参见即可。对于系统实施例而言,由于其与方法实施例基本相似,所以描述的比较简单,相关之处参见方法实施例的部分说明即可。
尽管已描述了本发明的优选实施例,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例做出另外的变更和修改。所以,所附权利要求意欲解释为包括优选实施例以及落入本发明实施例范围的所有变更和修改。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以权利要求的保护范围为准。
Claims (14)
1.一种显示基板,其特征在于,包括引线弯折区;
在所述引线弯折区,所述显示基板包括基底及层叠设置在所述基底上的无机绝缘层和金属层;
其中,所述金属层包括多条分立的金属引线,所述金属引线在所述基底上的正投影覆盖所述无机绝缘层在所述基底上的正投影。
2.根据权利要求1所述的显示基板,其特征在于,所述基底为柔性基底。
3.根据权利要求2所述的显示基板,其特征在于,所述基底的材质包括:聚酰亚胺、聚醚砜、聚丙烯酸酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚芳酯、聚碳酸酯、乙酸丙酸纤维素中的至少一种。
4.根据权利要求1至3任一项所述的显示基板,其特征在于,所述无机绝缘层的厚度为
5.根据权利要求1至3任一项所述的显示基板,其特征在于,所述无机绝缘层的材质包括:氧化硅、氮化硅、氮氧化硅中的至少一种。
6.一种显示基板的制备方法,其特征在于,包括:
在引线弯折区的基底上依次形成无机绝缘层和金属层;
采用第一掩膜版,通过构图工艺在金属层形成多条分立的金属引线;
去除引线弯折区内金属引线区域外的无机绝缘层。
7.根据权利要求6所述的显示基板的制备方法,其特征在于,所述去除引线弯折区内金属引线区域外的无机绝缘层,包括:
采用第二掩膜版,通过构图工艺去除引线弯折区内金属引线区域外的无机绝缘层。
8.根据权利要求6所述的显示基板的制备方法,其特征在于,所述采用第一掩膜版,通过构图工艺在金属层形成多条分立的金属引线,包括:
采用第一掩膜版对金属层利用第一刻蚀工艺,刻蚀形成多条分立的金属引线;
所述去除引线弯折区内金属引线区域外的无机绝缘层,包括:
利用第二刻蚀工艺,刻蚀去除引线弯折区内金属引线区域外的无机绝缘层。
9.根据权利要求6所述的显示基板的制备方法,其特征在于,所述在引线弯折区的基底上依次形成无机绝缘层和金属层,包括:
提供基底;
在基底上形成多层绝缘层;
对引线弯折区的多层绝缘层进行图案化处理,形成所述无机绝缘层;
形成金属层。
10.根据权利要求9所述的显示基板的制备方法,其特征在于,所述在基底上形成多层绝缘层,包括:
在基底上依次形成缓冲层、第一绝缘层、第二绝缘层、层间绝缘层;
所述对引线弯折区的多层绝缘层进行图案化处理,形成所述无机绝缘层,包括:
刻蚀去除引线弯折区的层间绝缘层、第二绝缘层和第一绝缘层;
对引线弯折区的缓冲层进行部分刻蚀,形成所述无机绝缘层。
11.根据权利要求9所述的显示基板的制备方法,其特征在于,所述基底为柔性基底。
12.根据权利要求11所述的显示基板的制备方法,其特征在于,所述基底的材质包括:聚酰亚胺、聚醚砜、聚丙烯酸酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚芳酯、聚碳酸酯、乙酸丙酸纤维素中的至少一种。
13.根据权利要求9所述的显示基板的制备方法,其特征在于,所述缓冲层的材质包括:氧化硅、氮化硅、氮氧化硅中的至少一种。
14.一种显示装置,其特征在于,包括权利要求1至5任一项所述的显示基板。
Priority Applications (3)
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