CN108328622A - 层状硅酸铜的扩孔方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 24
- NSVHEPGUBVSHMK-UHFFFAOYSA-N [Cu].[Si](O)(O)(O)O Chemical compound [Cu].[Si](O)(O)(O)O NSVHEPGUBVSHMK-UHFFFAOYSA-N 0.000 title claims abstract description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 238000003756 stirring Methods 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000032683 aging Effects 0.000 claims abstract description 8
- 239000013049 sediment Substances 0.000 claims abstract description 8
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 7
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000005406 washing Methods 0.000 claims abstract description 6
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 235000019838 diammonium phosphate Nutrition 0.000 claims abstract description 5
- 229910000388 diammonium phosphate Inorganic materials 0.000 claims abstract description 4
- ZZBBCSFCMKWYQR-UHFFFAOYSA-N copper;dioxido(oxo)silane Chemical compound [Cu+2].[O-][Si]([O-])=O ZZBBCSFCMKWYQR-UHFFFAOYSA-N 0.000 claims description 9
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 8
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 8
- -1 copper halide Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical compound [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 claims description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 claims description 2
- 229940116318 copper carbonate Drugs 0.000 claims description 2
- 229940108925 copper gluconate Drugs 0.000 claims description 2
- 229910001431 copper ion Inorganic materials 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 2
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 claims description 2
- FWBOFUGDKHMVPI-UHFFFAOYSA-K dicopper;2-oxidopropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[O-]C(=O)CC([O-])(C([O-])=O)CC([O-])=O FWBOFUGDKHMVPI-UHFFFAOYSA-K 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229920002472 Starch Polymers 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- AEJIMXVJZFYIHN-UHFFFAOYSA-N copper;dihydrate Chemical compound O.O.[Cu] AEJIMXVJZFYIHN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims 1
- 235000019698 starch Nutrition 0.000 claims 1
- 239000008107 starch Substances 0.000 claims 1
- 238000006555 catalytic reaction Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 3
- 239000011949 solid catalyst Substances 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 23
- 239000003054 catalyst Substances 0.000 description 11
- 239000011148 porous material Substances 0.000 description 11
- 239000000047 product Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000012065 filter cake Substances 0.000 description 5
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000001354 calcination Methods 0.000 description 3
- 239000003643 water by type Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010410 dusting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-L Phosphate ion(2-) Chemical compound OP([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-L 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- APTUIUORLSQNEF-UHFFFAOYSA-N dicopper tetranitrate Chemical compound [Cu++].[Cu++].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O APTUIUORLSQNEF-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- LITQZINTSYBKIU-UHFFFAOYSA-F tetracopper;hexahydroxide;sulfate Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Cu+2].[Cu+2].[Cu+2].[Cu+2].[O-]S([O-])(=O)=O LITQZINTSYBKIU-UHFFFAOYSA-F 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/20—Silicates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/16—Clays or other mineral silicates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/72—Copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
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- B01J35/63—Pore volume
- B01J35/638—Pore volume more than 1.0 ml/g
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Abstract
本发明属固体催化剂扩孔方法领域,尤其涉及一种利用磷酸二氢氨作为扩孔剂的层状硅酸铜的扩孔方法,包括如下步骤:(1)将一定量的铜源溶于去离子水中;向溶液中加入将一定量的磷酸氢二铵,使其完全溶解;(2)向步骤(1)所得溶液中加入一定量氨水,使其形成铜氨络合物;(3)加入一定量质量浓度为25%~30%的硅溶胶溶液,搅拌老化;加热,蒸出氨气得到沉淀物;(4)将步骤(3)所得沉淀物过滤,洗涤,煅烧,即得目的产物。本发明工艺简单,目的产品质量稳定,重复性好,不影响铜物种的分布及原有催化特性。
Description
技术领域
本发明属固体催化剂扩孔方法领域,尤其涉及一种利用磷酸二氢氨作为扩孔剂的层状硅酸铜的扩孔方法。
背景技术
固体催化剂通常是多孔的,反应物必须进入孔中与催化剂表面活性中心接触,反应才能迅速发生,而反应物也要及时的扩散出去才能维持反应的正常进行。因此孔结构对催化剂的性能如活性,强度,选择性,表面利用率和中毒难易都有影响,因此,一个催化反应在活性组分确定后,选择适当的载体并使制备成的催化剂具有最佳的孔结构是非常重要的。在活性及强度允许的情况下,适当的增大孔径,有利于减小扩散阻力,增加孔的热稳定性,防止增容反应,结碳等对催化剂骨架的影响(如涨裂、粉化、失去强度等),从而增加对非化学性中毒的抵抗能力。当催化剂具有双峰空结构或多峰孔结构时,该催化剂的利用率可以明显提高。
近年来,由于铜基催化剂具有来源广泛,价格低廉,催化活性显著等优势,越来越广泛的应用于油品及脂肪族的反应当中,Cu/SiO2系催化剂基于较大的比表面积和催化稳定性被广泛应用。由于较大比表面积的层状硅酸铜孔径均集中在3nm左右,很难与较大分子形成有效的催化反应。
发明内容
本发明旨在克服现有技术的不足之处而提供一种工艺简单,目的产品质量稳定,重复性好,不影响铜物种的分布及原有催化特性的层状硅酸铜的扩孔方法。
为解决上述技术问题,本发明是这样实现的。
层状硅酸铜的扩孔方法,依次按如下步骤实施。
(1)将一定量的铜盐溶于去离子水中;向溶液中加入将一定量的磷酸氢二铵,使其完全溶解。
(2)向步骤(1)所得溶液中加入一定量氨水,使其形成铜氨络合物。
(3)加入一定量质量浓度为25%~30%的硅溶胶溶液,搅拌老化;加热,蒸出氨气得到沉淀物。
(4)将步骤(3)所得沉淀物过滤,洗涤,煅烧,即得目的产物。
作为一种优选方案,本发明步骤(1)所述铜盐包括硝酸铜、硫酸铜、醋酸铜、卤化铜、碱式卤化铜、碱式碳酸铜、葡萄糖酸铜、碱式硫酸铜、溴化铜或柠檬酸铜中的一种或两种以上的混合物。
进一步地,本发明步骤(1)所述铜盐溶液中铜离子浓度为0.1~0.2 mol/kg。
进一步地,本发明步骤(1)中向溶液中加入磷酸氢二铵同时,对溶液进行加热搅拌、微波加热或超声震动处理,使其完全溶解。
进一步地,本发明步骤(1)中所述铜盐与磷酸二氢氨的摩尔比为:5~30:1。
进一步地,本发明步骤(3)中所述搅拌老化时间为0~14h。
进一步地,本发明步骤(3)中所述加热温度为20~100℃。
进一步地,本发明步骤(4)中采用去离子水洗涤1~5次。
进一步地,本发明步骤(3)所得溶液pH值在4~8。
本发明通过在硅酸铜的制备过程中加入一定量磷酸二氢铵,改变了原有的硅酸铜孔径分布,N2物理吸附表征得出在无磷酸二氢铵加入的试验中硅酸铜的孔分布集中在3nm左右,通过对孔径分布的分析计算得出2~4nm孔体积(BJH法)占总体积56.95%,比表面积(BET法)占总体77.80%,而实验较佳的加入摩尔比(硝酸铜:磷酸二氢铵)为8:1的磷酸二氢铵后,2~4nm孔体积占总体19.15%,比表面积占总体44.06%,8~10nm的孔体积占总体23.37%,比表面积占总体18.17%。实验结果表明磷酸二氢氨的加入可以明显改变硅酸铜物种的孔径分布,使9nm左右形成更多的大孔结构。
在无磷酸二氢铵加入的制备方法中,得到的产物比表面积为543.7 m²/g,平均孔径为 50.95 Å,孔容为0.62 cm³/g。加入一定量的磷酸二氢铵后得到的本发明产物比表面积为488.7 m²/g,平均孔径为84.54 Å,孔容为1.15 cm³/g。磷酸二氢氨的加入使反应产物存在了磷酸形式的铜物种,对于形成的微观结构为层状的硅酸铜起到了空间结构的支持作用,因此改变了硅酸铜二次孔的分布情况,增大了平均孔径,而随着孔径的增大,比表面积也略有下降。研究表明在催化剂的制备及催化反应之中,适当增大孔径及孔容适当的增大孔径,有利于减小扩散阻力、增加孔的热稳定性、防止增容反映、结碳等对催化剂骨架的涨裂、粉化从而失去强度,增加对非化学性中毒的抵抗能力。因此本发明对催化剂的制备及应用有着现实的指导意义。本发明工艺简单,成本低廉,对环境友好。
附图说明
下面结合说明书附图和具体实施方式对本发明作进一步说明。本发明的保护范围不仅局限于下列内容的表述。
图1为硅酸铜的孔径分布图。
图2为硅酸铜的吸附曲线。
具体实施方式
实施例1。
一种层状硅酸铜的扩孔方法,其步骤如下:将50g硝酸铜铜溶于700g去离子水中;向溶液中加入1g磷酸氢二铵,加热搅拌使其完全溶解;然后向溶液中加入170g,质量浓度为25%的氨水,使溶液形成铜氨络合物;加入80g,质量浓度为25%的硅溶胶溶液;搅拌老化12h;加热80℃,蒸出氨气得到沉淀物,直到溶液pH值为5;真空泵抽滤,去离子水洗涤3次得到滤饼,400℃煅烧滤饼即得目的产物。
实施例2。
一种层状硅酸铜的扩孔方法,其步骤如下:将1g的磷酸二氢铵溶于700g去离子水;向溶液中加入50g硝酸铜,微波加热使溶液完全溶解分散;向溶液中加入170g ,质量浓度为25%氨水,使溶液形成铜氨络合物,搅拌均匀;加入80g ,质量浓度为30%的硅溶胶溶液;搅拌老化12h;加热80℃,蒸出氨气得到沉淀物,直到溶液pH值为5;真空泵抽滤,去离子水洗涤3次得到滤饼,400℃煅烧滤饼即得目的产物。
实施例3。
一种层状硅酸铜的扩孔方法,其步骤如下:将5g的磷酸二氢铵溶于700g去离子水中;向溶液中加入50g硝酸铜,超声震动使溶液完全溶解分散;向溶液中加入170g,质量浓度为25%氨水,使溶液形成铜氨络合物,搅拌均匀;加入80g ,质量浓度为30%的硅溶胶溶液;搅拌老化12h;加热80℃,蒸出氨气得到沉淀物,直到溶液pH值为5;离心泵抽滤,去离子水洗涤3次得到滤饼,400℃煅烧滤饼即得目的产物。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (9)
1.层状硅酸铜的扩孔方法,其特征在于,依次按如下步骤实施:
(1)将一定量的铜源溶于去离子水中;向溶液中加入将一定量的磷酸氢二铵,使其完全溶解;
(2)向步骤(1)所得溶液中加入一定量氨水,使其形成铜氨络合物;
(3)加入一定量质量浓度为25%~30%的硅溶胶溶液,搅拌老化;加热,蒸出氨气得到沉淀物;
(4)将步骤(3)所得沉淀物过滤,洗涤,煅烧,即得目的产物。
2.根据权利要求1所述层状硅酸铜的扩孔方法,其特征在于:步骤(1)所述铜源包括硝酸铜、硫酸铜、醋酸铜、卤化铜、碱式卤化铜、碱式碳酸铜、葡萄糖酸铜、氢氧化铜、溴化铜或柠檬酸铜中的一种或两种以上的混合物。
3.根据权利要求2所述层状硅酸铜的扩孔方法,其特征在于:步骤(1)所述铜离子浓度为0.1~0.2mol/Kg。
4.根据权利要求3所述层状硅酸铜的扩孔方法,其特征在于:步骤(1)中向溶液中加入磷酸二氢铵同时,对溶液进行加热搅拌、微波加热或超声震动处理,使其完全溶解。
5.根据权利要求4所述层状硅酸铜的扩孔方法,其特征在于:步骤(1)中所述铜源与磷酸二氢氨的摩尔比为:5~30:1。
6.根据权利要求5所述层状硅酸铜的扩孔方法,其特征在于:步骤(3)中所述搅拌老化时间为0~14h。
7.根据权利要求6所述层状硅酸铜的扩孔方法,其特征在于:步骤(3)中所述加热温度为20~100℃。
8.根据权利要求7所述层状硅酸铜的扩孔方法,其特征在于:步骤(4)中采用去离子水洗涤1~5次。
9.根据权利要求1~8任一所述层状硅酸铜的扩孔方法,其特征在于:步骤(3)所得溶液pH值在4~8。
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