CN108306524A - 具有屏蔽涡旋电流的栅极线圈的逆变器开关器件用的功率模块 - Google Patents

具有屏蔽涡旋电流的栅极线圈的逆变器开关器件用的功率模块 Download PDF

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CN108306524A
CN108306524A CN201810011312.0A CN201810011312A CN108306524A CN 108306524 A CN108306524 A CN 108306524A CN 201810011312 A CN201810011312 A CN 201810011312A CN 108306524 A CN108306524 A CN 108306524A
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heat
conducting plate
power module
power
induction coil
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CN108306524B (zh
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徐竹娴
雷光寅
陈清麒
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Ford Global Technologies LLC
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Abstract

一种用于电动车辆驱动装置的逆变器，具有使用封装在主动冷却的功率模块中的功率晶体管的桥式配置。承载驱动晶体管的栅极信号的功率模块中的控制电极包括感应线圈以增加共源极电感而减少功率损失。每个逆变器功率模块包括具有限定功率回路的输出电极的一对晶体管芯片。具有感应线圈的承载相应的栅极信号的控制电极布置为与功率回路磁耦合。为了主动冷却，导热板位于芯片下方。磁阻器设置在导热板处。局部涡旋电流防止器设置在导热板上，对准感应线圈，以避免另外可能减少感应线圈与功率回路耦合的涡旋电流。

Description

具有屏蔽涡旋电流的栅极线圈的逆变器开关器件用的功率 模块
技术领域
本发明大体涉及逆变桥中的功率开关器件，并且更具体地，涉及使用具有增加共源极电感的结构的分立的功率开关电路的电动车辆的逆变器驱动系统。
背景技术
诸如混合动力电动车辆(hybrid electric vehicle，HEV)、插电式混合动力电动车辆(plug-in hybrid electric vehicle，PHEV)、和电池电动车辆(battery electricvehicle，BEV)的电动车辆使用逆变器驱动的电机来提供牵引力矩。典型的电驱动系统可以包括直流(direct-current，DC)电源(诸如电池组或燃料电池)，DC电源通过接触器开关连接到可变电压转换器(variable voltage converter，VVC)以调节主DC链路电容器两端的主母线电压。逆变器连接在主母线和牵引马达之间，以便将DC母线功率转换成连接到马达绕组的交流(alternating current，AC)电压以推动车辆。
逆变器包括与多个相脚以桥式配置连接的晶体管开关器件(例如绝缘栅双极型晶体管(insulated gate bipolar transistor)，IGBT)。典型的配置包括由具有三个相脚的逆变器驱动的三相马达。电子控制器打开和关闭开关，以便于将来自母线的DC电压转换为对马达施加的AC电压。逆变器可以脉冲宽度调制DC链路电压，以便于传输近似的正弦电流输出，以所需的速度和扭矩来驱动马达。施加到IGBT栅极的脉冲宽度调制(Pulse WidthModulation，PWM)控制信号在必要时将IGBT打开和关闭，使得得到的电流符合所需的电流。
诸如IGBT或金属氧化物半导体场效应晶体管(Metal Oxide SemiconductorField Effect Transistor，MOSFET)的半导体开关器件通过由驱动器电路提供的栅极信号在栅极端子处被驱动。对于IGBT，栅极信号施加在器件的栅极端子和发射极端子之间。在导通状态下，输出信号通过集电极端子和发射极端子之间的器件传导。器件电流在栅极回路和功率回路中流动。
共源极电感是指功率回路和栅极回路之间的电感耦合。共源极电感的输出(功率回路)部分中的电流以增强(例如加速)开关性能的方式改变栅极电压。如在序列号15/341,184、题为“Inverter Switching Devices with Common Source Inductance Layout toAvoid Shoot-Through(具有避免直通的共源极电感布局的逆变器开关器件)”、申请于2016年11月2日的同为待审的美国申请(并且该申请因此通过引用并入本文)中所公开的，由于在开关转换期间消耗(即丢失)的能量减少，因此可能需要减少的开关时间。栅极回路电感和/或功率回路电感的大小以及二者之间的相互耦合程度可以通过选择适当的布局和/或在PCB迹线中包括形成到晶体管栅极或发射极的导电路径的附加重叠线圈来操纵(例如增强)，以便于获得所需的共源极电感。
晶体管开关器件和相关部件(例如跨接每个晶体管的反向二极管)通常封装在功率模块中。称为转模功率模块(transfer-molded power module，TPM)的典型配置通过将晶体管芯片、二极管、和电互连件(例如引线框架)封装在包覆成型的塑料体中来实现一个或多个逆变器的相脚。功率模块可以附接到导热的散热板上以去除由晶体管产生的热量。为了更快速地除去更多的热量，可以使用“冷板”的主动冷却来代替散热板或与散热板共同使用。冷板通常包括循环冷却剂的内部通道。
散热板或冷板通常可以包括平行于栅极回路和功率回路的平面延伸的导电板或导电表面。例如，冷板可以包括限定冷却剂流动的内部通道的铝壳。已经发现，在这些表面中产生的涡旋电流会产生倾向于阻碍共源极电感增强的磁场。
发明内容
在本发明的一个方面，一种逆变器功率模块包括具有限定功率回路的输出电极的一对晶体管芯片。控制电极承载栅极信号，并且具有与功率回路磁耦合的感应线圈。导热板位于芯片下方。设置于导热板上的局部涡旋电流防止器对准感应线圈。
根据本发明，提供一种逆变器功率模块，包括：
一对晶体管芯片，所述一对晶体管芯片具有限定功率回路的输出电极；
一对控制电极，所述一对控制电极承载相应的栅极信号，并且具有与所述功率回路磁耦合的感应线圈；
导热板，所述导热板位于所述芯片下方；
局部涡旋电流防止器，所述局部涡旋电流防止器设置于所述导热板上，对准所述感应线圈。
在本发明的一个实施例中，所述防止器包括磁屏蔽片。
在本发明的一个实施例中，所述磁屏蔽片由硅钢构成。
在本发明的一个实施例中，所述防止器包括在所述导热板中的开放槽，所述开放槽产生电绝缘区域使得涡旋电流横向位移离开所述感应线圈。
在本发明的一个实施例中，所述导热板包括流体热交换器壳体，所述流体热交换器壳体具有平坦的顶壁和底壁以及内部通道，其中所述防止器包括将所述壳体部分地等分的在壁中的开放槽，并且其中所述内部通道提供在所述开放槽的两侧之间延伸的冷却剂流动路径。
在本发明的一个实施例中，所述导热板包括散热器，所述散热器具有由电绝缘区域分隔的两个不连续部分。
在本发明的一个实施例中，所述芯片和所述电极安装到直接键合铜(DBC)基板，并且其中所述导热板包括具有由电绝缘区域分隔的两个不连续部分的DBC背衬层。
在本发明的一个实施例中，所述感应线圈连接到所述晶体管芯片的栅极端子。
在本发明的一个实施例中，所述感应线圈连接到所述晶体管芯片的发射极端子。
在本发明的一个实施例中，所述晶体管芯片各自包括绝缘栅双极晶体管(IGBT)。
根据本发明，提供一种用于车辆的电驱动系统，包括：
DC链路，所述DC链路位于从电源接收DC供给电压的一对母线之间；
多个功率模块，所述多个功率模块在所述母线之间以桥式配置连接以向驱动马达提供交流功率，每个所述功率模块包括：
一对晶体管芯片，所述一对晶体管芯片具有限定功率回路的输出电极；
一对控制电极，所述一对控制电极承载相应的栅极信号，并且具有与所述功率回路磁耦合的感应线圈；
导热板，所述导热板位于所述芯片下方；
局部涡旋电流防止器，所述局部涡旋电流防止器设置于所述导热板上，对准所述感应线圈。
在本发明的一个实施例中，每个所述防止器包括磁屏蔽片。
在本发明的一个实施例中，每个所述磁屏蔽片由硅钢构成。
在本发明的一个实施例中，所述防止器包括在相应的导热板中的开放槽，所述开放槽产生电绝缘区域使得涡旋电流横向位移离开所述感应线圈。
在本发明的一个实施例中，所述导热板包括流体热交换器壳体，所述流体热交换器壳体具有平坦的顶壁和底壁以及内部通道，其中所述防止器包括将所述壳体部分地等分的在相应壁中的开放槽，并且其中所述内部通道提供在相应的开放槽的两侧之间延伸的冷却剂流动路径。
在本发明的一个实施例中，每个所述导热板包括散热器，所述散热器具有由电绝缘区域分隔的两个不连续部分。
在本发明的一个实施例中，所述芯片和所述电极安装到相应的直接键合铜(DBC)基板，并且其中每个所述导热板包括具有由电绝缘区域分隔的两个不连续部分的DBC背衬层。
在本发明的一个实施例中，所述感应线圈连接到所述相应的晶体管芯片的栅极端子。
在本发明的一个实施例中，所述感应线圈连接到所述相应的晶体管芯片的发射极端子。
在本发明的一个实施例中，所述晶体管芯片各自包括绝缘栅双极晶体管(IGBT)。
附图说明
图1是示出具有一对IGBT的逆变器的相脚的等效电路的示意图，其中每个IGBT具有共源极电感；
图2是具有一对IGBT和传统电极结构的转模功率模块(TPM)的平面图；
图3是转模功率模块(TPM)的平面图，其中在栅极控制电极中添加感应线圈以增强共源极电感；
图4是图3的TPM和主动冷却系统的热交换器壳体或冷板的侧视剖面图，其中涡旋电流减小了栅极控制电极和功率回路之间的电感耦合；
图5是图4的冷板去除顶盖的俯视图；
图6是根据本发明一个实施例的具有导热板和磁屏蔽片的TPM的侧视图；
图7是图6的导热板和磁屏蔽片的俯视图；
图8是根据另一个实施例的冷板或热交换器壳体的俯视图；
图9是另一实施例的侧视图，其中导热的导热板与具有由电绝缘材料形成的外壳的主动冷板相组合；
图10是图9的冷板和散热器的俯视图；
图11是具有栅极控制线圈的直接键合铜(direct bond copper，DBC)功率模块的俯视图；
图12是具有分开的背衬层的图11的DBC模块的侧视图；
图13是图12的分开的背衬层的平面图。
具体实施方式
共源极电感是由用于晶体管开关器件的主功率回路和栅极驱动回路共享的电感。共源极电感通常来自与印刷电路板上的器件封装和迹线相关的寄生电感。就用于从直流到交流功率转换的开关桥而言，共源极电感的存在是有益的。图1示出了在驱动电动马达的电动车辆中的逆变器驱动系统中常用类型的相脚10的示例，其中上部晶体管11示为具有上部栅极、集电极、和发射极端子的IGBT。也可以使用其它类型的半导体器件，例如MOSFET。如本文所使用的，IGBT的栅极、集电极、和发射极端子也指MOSFET的栅极、漏极、和源极端子。具有下部栅极、集电极、和发射极端子的下部晶体管12与上部晶体管11串联在正极母线13和负极母线14之间，以限定中间连接点15。母线13和14提供DC链路，DC链路从DC电源(例如电池)通过可变电压转换器(未示出)接收DC供给电压。反向并联二极管16和17跨接晶体管11和12。
上部栅极和发射极端子产生上部共源极电感，上部共源极电感包括与功率回路(即发射极侧)电感19磁耦合的栅极回路电感18。栅极驱动电路20和栅极电阻器21连接到栅极端子以便于控制上部晶体管11的开关。下部栅极和发射极端子产生下部共源极电感，下部共源极电感包括与功率回路电感23磁耦合的栅极回路电感22。栅极驱动电路24和栅极电阻器25连接到栅极端子以便控制下部晶体管12的开关。
图2示出了配置为具有最小共源极电感的转模电源模块(TPM)29。2合1模块承载一对开关晶体管，该对开关晶体管为实现逆变桥的相脚而连接。具体地，成型体30承载多个导电迹线或引线框架元件31、32、和33，多个导电迹线或引线框架元件31、32、和33延伸超过主体30的边缘34以形成用于分别连接正母线DC+、负母线DC-、和相脚输出AC的电源端子。第一(上部)IGBT 35是形成为芯片的半导体器件，半导体器件具有在焊接到迹线31的底面上形成的集电极端子或焊盘。芯片的上表面设置有栅极端子/焊盘36，而焊盘36的周围区域设置有发射极端子/焊盘，该发射极端子/焊盘焊接到接合引线板或突片37的一端。板37的第二端38焊接到迹线33以将IGBT 35的发射极连接到第二(下部)IGBT 40的集电极和AC相脚输出。IGBT 40的芯片的上表面设置有栅极端子/焊盘43，而焊盘43的周围区域设置有发射极端子/焊盘，该发射极端子/焊盘焊接到接合引线板或突片41的一端。板41的第二端42焊接到迹线32以将IGBT 40的发射极连接到负母线DC-。迹线31-33以及板37和41都彼此电绝缘，并由(可由环氧树脂构成的)成型体30保持在适当位置。
一组连接器引脚，包括栅极引脚46和48以及开尔文发射极引脚47和49，延伸超过主体30的第二边缘45。接合的跳线50和51将栅极引脚46和48分别连接到栅极端子36和43。接合的跳线52和53将开尔文发射极引脚47和49分别连接到IGBT 35和40的发射极焊盘。开尔文发射极引脚布置为不承载IGBT的输出电流(即开尔文发射极引脚垂直于IGBT的输出电流)。
在图2的TPM中，导电迹线31和32之间的区域包括由相脚输出电流产生的呈现局部最大变化率的磁通量。在IGBT的开关瞬变期间，在DC+和DC-端子处产生高di/dt，而在AC端子处的电流变化相对较慢。迹线31和32之间的区域由于对应于由IGBT电流产生的磁通量的最高变化率，因而具有产生共源极电感的最大电位。如图3所示，可以通过在靠近高di/dt区域的栅极控制电极(即栅极侧或发射极侧)中放置一个或多个感应线圈来增强栅极回路和功率回路之间的耦合(即共源极电感)。因此，2合1的转模电源模块(TPM)60具有包覆成型体61，包覆成型体61承载引线框架的多个导电迹线62、63、和64以形成分别连接正母线DC+、负母线DC-、和相脚输出AC的电源端子。上部IGBT 65具有形成在焊接到迹线62的底面上的集电极端子或焊盘。IGBT 65的上表面设置有栅极端子/焊盘66，而焊盘66的周围区域设置有焊接到接合引线板或突片67的一端的发射极端子/焊盘。板67焊接到迹线64以将IGBT 65的发射极连接到下部IGBT 68的集电极和AC相脚输出。IGBT 68的上表面设置有栅极端子/焊盘69，而焊盘69的周围区域设置有焊接到接合引线板或突片70的一端的发射极端子/焊盘。板70也焊接到迹线63以便于将IGBT 68的发射极连接到负母线DC-。迹线62-64以及板67和70都由主体61彼此电绝缘。铜分隔件(未示出)可用于连接芯片和引线框架。
为IGBT 65提供开尔文发射极引脚71和栅极引脚72。为IGBT 68提供栅极引脚73和开尔文发射极引脚74。接合的跳线75和76将发射极引脚71和74分别连接到IGBT 65和68的发射极焊盘。栅极线圈以下述方式分别连接在栅极引脚72和73与栅极焊盘66和69之间。辅助印刷电路板(printed circuit board，PCB)80(可以实现为柔性PCB)具有平面T形基板，平面T形基板承载由沿着回路图形的导电迹线形成的在上表面上的第一栅极线圈81和在下表面上的第二栅极线圈82。PCB 80设置在正极和负极迹线62和63之间的区域中以便于将线圈81和82暴露在由流入或流出DC+和DC-母线的电流产生的磁通量中(例如在磁通量具有局部最大变化率的位置处)。由于磁通量垂直于模块60的平面方向，PCB 80可以直接设置在线圈81和82之间，或者可以在磁通量的方向上稍微垂直偏移并且仍然保持在该区域中。由功率回路中的电流在栅极回路中磁感生的电压与磁通量的变化率成正比。通过将栅极线圈定位在识别的区域中，可以达到增强的耦合。通过调节线圈的尺寸和/或向线圈添加匝数，共源极电感可以调节到任何所需的幅度。在替代性实施例中，感应线圈81和82可以替代地在IGBT的开尔文发射极引脚和发射极焊盘之间(即在栅极控制电极的发射极侧)连接。
由于功率转换器为驱动电动马达的高电流操作而产生热量，很需要使用散热器和/或主动冷却(例如液体冷却)来散热。在图4中，TPM 60通过绝缘片83附接到构造为具有下部85和顶盖86的外壳的冷板84。部85和盖86可以形成为铝制冲压件，铝制冲压件被钎焊在一起以形成本领域已知的密封外壳。如图5所示，部85优选地包括在入口87和出口88之间生成蛇形通道90以传输冷却流体的内壁89。绝缘片83可以包括由有机硅弹性体或陶瓷以便提供电绝缘。
图4示出了由在功率回路中流动的典型电流生成的磁通量线91。磁通量的变化在附近的导电表面(例如盖86)上产生了涡旋电流。涡旋电流回路92以表明流入和流出图4的圆圈表示。涡旋电流回路进而产生与磁通量91相反的磁通量93。作为总磁通量降低的结果，辅助PCB 80处的功率回路和栅极回路之间的磁耦合也降低，由此共源极电感的增强效果降低。
本发明采用一种或多种对策来防止产生与功率开关的栅极电路中的感应线圈重合的磁通量的涡旋电流，该感应线圈旨在增强共源极电感。在图6和7的第一实施例中，磁屏蔽片95插入辅助PCB 80(或用于在栅极控制电极中形成感应线圈的高di/dt区域97中的其他结构)和冷板84(或可能位于功率开关芯片之下的其他导热和导电板)中的导电表面之间。屏蔽片95具有高磁导率和高电阻率，使得1)磁通量被引导离开栅极线圈下方的冷板84，并且2)涡旋电流在片95本身内被抑制。图6示出来自功率回路的磁通量不减少地通过PCB80。例如，片95可以由硅钢构成。片95可能包括也可能不包括增加电绝缘的涂层。由于典型的磁屏蔽材料的成本相对较高，因此可能需要利用仅覆盖足够区域的屏蔽片来屏蔽栅极控制电极/感应线圈以获得对于共源极电感的充分耦合。因此，片95可以由如图6和7所示的窄带构成，而在TPM 60的其余部分下方具有常规的绝缘片96A和96B。因此，由磁屏蔽材料获得的涡旋电流防止器只需要与栅极控制电极(即感应线圈)对准。在冷板84中仍然产生涡旋电流，但是涡旋电流横向移位远离区域97，并且由涡旋电流产生的相反的磁通量不影响感应线圈。
在图8所示的另一实施例中，改变冷板100以消除与感应线圈/栅极控制电极对准的区域中的导电表面。因此，涡旋电流防止器具有生成与高di/dt区域97一致的电绝缘区域的开放槽101的形式。因此涡旋电流102横向移位远离区域97，并且由涡旋电流102产生的相反的磁通量不影响感应线圈。可以在不改变冷却剂流动路径(即在开放槽101的两侧之间延伸冷却剂路径)并且不显著影响传热表面的面积的情况下生成开放槽101。
图9示出了替代性的主动冷却系统，其中冷板105形成于电绝缘材料(例如模制的热塑性材料)上。为了将来自TPM 60的热量传导到冷板105中，经常使用金属导热板或散热器106。因此，功率回路电流可以感生磁通量107，在散热器106中产生涡旋电流108。然后相反的磁通量109减小与感应栅极线圈80一致的有效磁通量。为了防止位于高di/dt区域97周围区域的涡旋电流，导热板通过电绝缘的中间区域或开放槽110C被分隔为两个不连续部分110A和110B。区域110C提供了电传导的断开间隔，但是该间隔可以被诸如环氧树脂模制部的绝缘材料占据。因此，当电流111在功率回路中流动时，仅在横向平移离开区域97的部分110A和110B内产生涡旋电流。
图11示出了基于直接键合铜(DBC)技术的替代性功率模块120。DBC基板(例如瓷板)121在键合铜层的蚀刻部分上承载功率晶体管芯片122和123(例如IGBT)。用于芯片122和123的栅极控制电极分别包括增强共源极电感的感应线圈124和125。在基板121的背面(未示出)，通常使用未蚀刻的连续的铜背衬层(例如用于热传导)。然而如上所述，连续层受到涡旋电流的影响。
图12和13示出了本发明的另一个实施例，其中DBC基板121具有通过插入的电绝缘区域128分隔成两个不连续部分126和127的背衬层。具体地，区域128可以通过蚀刻掉所结合铜层的相应部分而获得。由于电导率的间隔，功率回路电流130仅感生位移的涡旋电流131和132，使得感应线圈124/125不受反向磁通量的影响。

Claims (15)

1.一种逆变器功率模块，包括：
一对晶体管芯片，所述一对晶体管芯片具有限定功率回路的输出电极；
一对控制电极，所述一对控制电极承载相应的栅极信号，并且具有与所述功率回路磁耦合的感应线圈；
导热板，所述导热板位于所述芯片下方；和
局部涡旋电流防止器，所述局部涡旋电流防止器设置于所述导热板上，对准所述感应线圈。
2.根据权利要求1所述的功率模块，其中所述防止器包括磁屏蔽片。
3.根据权利要求2所述的功率模块，其中所述磁屏蔽片由硅钢构成。
4.根据权利要求1所述的功率模块，其中所述防止器包括在所述导热板中的开放槽，所述开放槽产生电绝缘区域使得涡旋电流横向位移远离所述感应线圈。
5.根据权利要求1所述的功率模块，其中所述导热板包括流体热交换器壳体，所述流体热交换器壳体具有平坦的顶壁和底壁以及内部通道，其中所述防止器包括将所述壳体部分地等分的在所述壁中的开放槽，并且其中所述内部通道提供在所述开放槽的两侧之间延伸的冷却剂流动路径。
6.根据权利要求1所述的功率模块，其中所述导热板包括散热器，所述散热器具有由电绝缘区域分隔的两个不连续部分。
7.根据权利要求1所述的功率模块，其中所述芯片和所述电极安装到直接键合铜(DBC)基板，并且其中所述导热板包括具有由电绝缘区域分隔的两个不连续部分的DBC背衬层。
8.根据权利要求1所述的功率模块，其中所述感应线圈连接到所述晶体管芯片的栅极端子。
9.根据权利要求1所述的功率模块，其中所述感应线圈连接到所述晶体管芯片的发射极端子。
10.根据权利要求1所述的功率模块，其中所述晶体管芯片各自包括绝缘栅双极晶体管(IGBT)。
11.一种用于车辆的电驱动系统，包括：
DC链路，所述DC链路位于从电源接收DC供给电压的一对母线之间；
多个功率模块，所述多个功率模块在所述母线之间以桥式配置连接以向驱动马达提供交流功率，每个所述功率模块包括：
一对晶体管芯片，所述一对晶体管芯片具有限定功率回路的输出电极；
一对控制电极，所述一对控制电极承载相应的栅极信号，并且具有与所述功率回路磁耦合的感应线圈；
导热板，所述导热板位于所述芯片下方；和
局部涡旋电流防止器，所述局部涡旋电流防止器设置于所述导热板上，对准所述感应线圈。
12.根据权利要求11所述的驱动系统，其中每个所述防止器包括硅钢磁屏蔽片。
13.根据权利要求11所述的驱动系统，其中每个所述防止器包括在相应的所述导热板中的开放槽，所述开放槽产生电绝缘区域使得涡旋电流横向位移远离所述感应线圈。
14.根据权利要求11所述的驱动系统，其中每个所述导热板包括流体热交换器壳体，所述流体热交换器壳体具有平坦的顶壁和底壁以及内部通道，其中每个所述防止器包括将所述壳体部分地等分的在相应的所述壁中的开放槽，并且其中每个所述内部通道提供在相应的所述开放槽的两侧之间延伸的冷却剂流动路径。
15.根据权利要求11所述的驱动系统，其中所述芯片和所述电极安装到相应的直接键合铜(DBC)基板，并且其中每个所述导热板包括具有由电绝缘区域分隔的两个不连续部分的相应的DBC背衬层。
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