CN108231941A - 具有图案化发射极的多结太阳能电池和制作该太阳能电池的方法 - Google Patents

具有图案化发射极的多结太阳能电池和制作该太阳能电池的方法 Download PDF

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CN108231941A
CN108231941A CN201711259931.3A CN201711259931A CN108231941A CN 108231941 A CN108231941 A CN 108231941A CN 201711259931 A CN201711259931 A CN 201711259931A CN 108231941 A CN108231941 A CN 108231941A
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solar cell
emitter
dopant
basal substrate
patterning
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CN108231941B (zh
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C·M·费策尔
P·赫伯特
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Boeing Co
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Boeing Co
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Abstract

本申请公开一种具有图案化发射极的多结太阳能电池和制作该太阳能电池的方法。一种多结太阳能电池，其包括基底基板，该基底基板包括IV族半导体和第一载流子类型的掺杂剂。图案化发射极在该基底基板的第一表面处形成。图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域。包括图案化发射极的基底基板形成第一太阳能子电池。多结太阳能电池进一步包括上部结构，该上部结构包括在第一太阳能子电池上方的一个或更多个附加太阳能子电池。本发明还描述了制作多结太阳能电池的方法。

Description

具有图案化发射极的多结太阳能电池和制作该太阳能电池的 方法
技术领域
本公开涉及一种采用图案化发射极的多结太阳能电池和制作该太阳能电池的方法。
背景技术
提高的太阳能电池效率是太阳能电池制造商的持续目标。在单个太阳能电池中提供多个太阳能电池结是用于增加效率的已知方法。此类多结太阳能电池可以包括在锗基板中形成的下部子电池(subcell)。一个或更多个附加结在下部子电池上方形成。图1示出具有带扩散的发射极区域18的p型锗基板12的一个此类常规多结太阳能电池10的示例。GaInAs中间子电池14和GaInP顶部子电池16作为单片半导体堆叠的一部分在基板12上形成。中间子电池14和顶部子电池16包括除由发射极区域18提供的第一结以外的第二结和第三结(未示出)。n型成核层20、n型GaInAs缓冲层22、隧道结24、隧道结26和盖层28也定位在上部结构中，该上部结构在基板12上形成。在最下部子电池中的n型发射极18在成核层和/或缓冲层的III/V生长期间通过扩散到基板12中形成，以在整个基板表面上形成一致厚度的未图案化n型层。当用于形成发射极的毯覆式(blanket)扩散过程提供制造下部子电池的简便方法时，该发射极配置提供了损耗光生载流子的非理想路径，这降低了太阳能电池的效率。
本领域中需要一种具有提高的效率的多结太阳能电池。
发明内容
本公开涉及一种多结太阳能电池。该多结太阳能电池包括基底基板，所述基底基板包括IV族半导体和第一载流子类型的掺杂剂。图案化发射极在基底基板的第一表面处形成。该图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域。包括图案化发射极的基底基板形成第一太阳能子电池。该多结太阳能电池进一步包括上部结构，该上部结构包括在第一太阳能子电池上方的一个或更多个附加太阳能子电池。
本公开涉及一种制作多结太阳能电池的方法。该方法包括提供包括IV族半导体和第一载流子类型的掺杂剂的基底基板，该基底基板具有第一主要表面和与第一主要表面相对的第二主要表面。图案化发射极在基底基板的第一主要表面处形成。该图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域。包括图案化发射极的基底基板形成第一太阳能子电池。该方法进一步包括形成上部结构，该上部结构包括在第一太阳能子电池上方的一个或更多个附加太阳能子电池。
本公开还涉及一种制作太阳能基板的方法。该方法包括提供包括IV族半导体和第一载流子类型的掺杂剂的基底基板，该基底基板具有第一主要表面和与第一主要表面相对的第二主要表面。图案化发射极在基底基板的第一主要表面处形成，该图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域。包括图案化发射极的基底基板形成太阳能子电池。该方法进一步包括制备基底基板的第一主要表面，以接收外延层。
本公开还涉及一种太阳能电池基板。该太阳能电池基板包括基底基板，基底基板包括IV族半导体和第一载流子类型的掺杂剂。该基底基板具有第一主要表面和与第一主要表面相对的第二主要表面，第一主要表面准备好外延。图案化发射极在基底基板的第一主要表面处形成。该图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域。该基底基板包括形成第一太阳能子电池的图案化发射极。
应当理解的是，前述一般描述和下列详细描述仅是示例性的和说明性的，而并非限制所要求保护的本教导。
附图说明
并入本说明并构成本说明书的一部分的附图示出本教导的各方面并与描述一起用于解释本教导的原理。
图1示出常规多结太阳能电池的示意性横截面。
图2示出本公开的多结太阳能电池的示例的示意性横截面。
图3示出包括多个阱区域的本公开的图案化发射极的示意性顶视图。
图4示出在本公开的示例器件中的在图案化发射极阱区域之间的横向电流收集和扩展电流的示意图。
图5示出可以在本公开的多结太阳能电池中采用的有机子电池的示例的示意性横截面。
图6示出可以在本公开的多结太阳能电池中采用的有机子电池的示例的示意性横截面。
图7示出制备用于多结太阳能电池制造的基底基板的示例方法的流程图。
图8是根据本公开的示例的在III/V多结太阳能电池下具有理想化的减少的发射极触点的锗子电池的估计电压的曲线图。
图9示出包括多个图案化发射极的本公开的多结太阳能电池。
应该注意的是，附图的一些细节已经简化并被绘制成有助于理解，而不是维持严格的结构精确性、细节和比例。
具体实施方式
现在将详细参考本教导，本教导的示例在附图中示出。在附图中，相同的参考标号已经贯穿附图使用，以指代相同的元素。在下列描述中，参考行程描述的一部分的附图，并且其中通过说明的方式示出实践本教导的具体示例。因此，以下描述仅是示例性的。
图2示出本公开的多结太阳能电池100的示例。多结太阳能电池100包括基底基板102，基底基板102包括IV族半导体和第一载流子类型的背景掺杂剂。图案化发射极104在基底基板102的第一表面处形成。术语“图案化发射极”意味着发射极的掺杂的阱区域106仅在基底基板102的第一主要表面的一部分表面上选择性地形成，与在基底基板102的整个表面上形成扩散的掺杂区域不同。如将在下面更详细讨论的，可以采用将显著地减少发射极区域覆盖在基底基板102的第一主要表面上的总表面积的任何图案。任选钝化层132在基底基板102的第一表面处形成。上部结构120包括在其中形成图案化发射极104的基底基板102的表面上的一个或更多个子电池122、124。多个触点126、128经定位将多结太阳能电池连接到电路130。作为示例，此类电路可以用于提供电力至太阳能发电的器件和/或给电池充电。可以采用任何期望的电路设计，并且可以与本公开的太阳能电池结合使用的合适电路的示例在本领域是众所周知的。
基底基板102可以包括任何合适的IV族半导体材料。IV族半导体的示例包括选自锗和硅的材料。基底基板102经掺杂提供多结太阳能电池的第一子电池(在本文有时称为“第一太阳能子电池”)，如在下面详细描述的。
图2示出与基底基板102的背景掺杂区域110相邻形成的图案化发射极104的单个掺杂阱区域106的局部横截面视图。背景掺杂区域110掺杂有第一载流子类型的背景掺杂剂。图案化发射极104可以包括多个此类掺杂的阱区域106，如由图3的示意性顶视图所示。每个掺杂的阱区域106掺杂有与具有第一载流子类型的背景掺杂剂不同的第二载流子类型的掺杂剂。第一载流子类型的背景掺杂剂和第二载流子类型的掺杂剂经选择使得图案化发射极104与背景掺杂区域110一起形成第一pn结108(在本文还被称为太阳能电池结)。例如，第一载流子类型的背景掺杂剂可以是p型掺杂剂，在这种情况下，在图案化发射极104中使用的第二载流子类型的掺杂剂是n型掺杂剂。另选地，第一载流子类型的背景掺杂剂可以是n型掺杂剂，在这种情况下，第二载流子类型的掺杂剂是p型掺杂剂。少数载流子收集通过pn结发生，如由在图4的基底基板102中箭头所示。
再次参照图3，图案化发射极104的掺杂阱区域106被示出为以点阵列定位。本公开的阱区域能够以将允许在太阳能电池的操作期间进行期望的载流子收集的任何合适的阵列或随机图案定位。进一步地，虽然如从图3的俯视图所见，掺杂阱区域106被示出为具有圆形顶表面，但是可以采用任何合适的顶表面形状，包括正方形、长方形、棋盘图案、线、交叉线(例如，以形成网格)等。掺杂阱区域106被示出为由相对掺杂的背景掺杂区域110和/或钝化层132分离，但是可以连接。因此，可以采用将显著减少发射极区域在基底基板102的第一主要表面上覆盖的总表面积的任何图案。例如，发射极区域可以覆盖第一主要表面的总表面积的约1％至约50％，诸如约5％至约40％或约10％至约30％，其中第一主要表面是在其中形成发射极的基底基板的主要平面。
在相邻掺杂阱区域106之间的距离可以被选择为比基底基板102中的少数载流子的扩散长度短，使得所产生的载流子可以到达发射极。参照图3，作为两个相邻阱区域之间的最短距离的间距(pitch)的范围可以是例如从约0.1微米至约1mm或从约1微米至约100微米。对于圆形的掺杂阱区域，如图3中的那些，直径D可以具有任何合适的长度，该长度导致图案化发射极覆盖基底基板的期望总表面积并且掺杂阱区域106被定位成在相邻阱区域之间具有期望的距离，如在上面所讨论的。
掺杂阱区域106比钝化层132厚，并且充分地延伸经过钝化层132到基底基板102的背景掺杂区域中，以便允许掺杂阱区域106作为发射极起作用，如图2中所示。此外，掺杂阱区域106中的掺杂剂的浓度也高于钝化层132中的掺杂剂的浓度。在此，阱区域中的掺杂剂的浓度高于钝化层中的掺杂剂的浓度，所以钝化层中的浓度提供用于确定被视为相对地“更高的”浓度的任何必要的参考浓度。
与连续层发射极相比，采用诸如图2和图3中所示的图案化发射极可以减小发射极的体积，这反过来允许减少在太阳能电池的操作期间产生的载流子的肖克莱-里德-霍尔(Shockley-Read-Hall)复合类型的损耗。在所有情况相同的情况下，载流子的复合损耗减少导致太阳能电池效率提高。因此，发射极的尺寸可以被选择为减小发射极面积和体积，从而减少复合损耗。
再次参照图2，钝化层132是定位在图案化发射极104的掺杂阱区域106之间的基底基板102中的扩散区域，并包括与在基底基板102的背景掺杂剂中的相同的载流子类型的掺杂剂。可以采用提供期望的载流子类型的任何合适掺杂剂，诸如任何合适的n型或p型掺杂剂。任选地，如果要在基底基板102上形成的层是III-V材料，则掺杂剂可以是III-V材料本身的III族或V族元素中的一种。例如，如果GaInAs要在III-V基板上外延生长，则Ga、In或As可以扩散到基底基板102中，这取决于要用于形成钝化层132的期望的载流子类型。
钝化层132中的掺杂剂浓度可以高于基底基板102中的背景掺杂剂的浓度，以便与背景掺杂区域110在结处产生前表面场(front surface field，“FSF”)(例如，如果背景掺杂剂是p型，则该结为p+/p结，或者如果背景掺杂剂是n型，则该结为n+/n结)。钝化层132是任选的。如果采用钝化层132，则钝化层132可以通过在基底基板表面处产生前表面场来防止或减少由界面复合引起的少数载流子损耗。
pn结108形成多结太阳能电池100的第一子电池的电池结。至少一个附加太阳能子电池作为上部结构120的一部分在基底基板102上形成。例如，上部结构120可以包括中间子电池122和顶部子电池124。可以在上部结构120中形成任何期望数量的子电池，诸如1个至10个子电池或2个至6个子电池。可以采用任何合适的设计、材料和技术，以形成上部结构120的附加子电池结构。作为示例，一个或更多个子电池122、124可以各自包括在半导体材料中形成的至少一个pn结。合适的半导体材料可以包括IV族半导体诸如单晶硅、非晶硅，或复合半导体材料诸如III/V或II/IV异质外延层。可以采用任何合适的III/V异质外延材料，诸如GaAs、GaInAs或其他材料。可以采用任何合适的II/IV异质外延材料，诸如CdTe、CuInGaSe2或其他II/IV材料。用于沉积此类层的技术在本领域中是众所周知的，并且可以采用任何合适的技术。例如，这些层可以在本文所述的IV族基底基板(例如，Si或Ge)中的任何基底基板上外延地生长。可以将合适的掺杂剂添加到这些层中的任何层，以提供如本领域中众所周知的期望的导电性或其他子电池结属性。
还可以采用一个或更多个附加任选层作为多结太阳能电池100的一部分，包括隧道结层136、隧道结层138、成核层(nucleation layer)140、缓冲层144和盖层(cap layer)148。例如，隧道结136、138可以在基底基板102中的图案化发射极和单片外延生长结构中的一个或更多个子电池之间的III/V异质外延层中形成，如图2中所示。此类隧道结是众所周知的，并包括经配置允许电子在多结太阳能电池的子电池之间打开通道/隧穿(tunnel)的相对重掺杂的pn结。用于形成隧道结136、138的合适技术在本领域中是众所周知的。
隧道结层136和138、成核层140和缓冲层144可以包括任何合适的半导体材料，所述半导体材料可以为与子电池122、124所采用的材料相同或不同的材料，其中在不同层内的不同掺杂剂和/或掺杂剂浓度提供期望的电属性。合适的半导体材料可以包括IV族半导体诸如单晶硅或锗，或复合半导体材料诸如III/V或II/IV异质外延材料。可以采用任何合适的III/V异质外延材料，诸如GaAs、GaInAs或其他III/V材料。可以采用任何合适的II/IV异质外延材料，诸如CdTe、CuInGaSe2或其他II/IV材料。用于沉积此类层的技术在本领域中是众所周知的，并且可以采用任何合适的技术。例如，这些层可以在本文所述的IV族基底基板中的任何基底基板(例如，Si或Ge)上外延地生长。可以将合适的掺杂剂添加到这些层中的任何层，以提供如在本领域中众所周知的期望的导电性或其他属性。
成核层140可以在基底基板102上外延地生长，以提供在其上生长随后的外延层诸如缓冲层144的合适表面。成核层可以具有与图案化发射极104相同的多数载流子类型。成核层的一个示例是镓铟磷化物，但是可以采用任何合适的成核层。
成核层可以具有将允许大量(bulk)异质外延层在其上生长的任何期望厚度。合适的成核层厚度的示例的范围可以从约(埃)至约如约至约或约至约
如图2中所示，缓冲层144可以定位在成核层140和中间子电池122之间。缓冲层144可以在成核层140上外延地生长，并且可以具有与图案化发射极104相同的多数载流子类型。缓冲层144可以包括本文教导的任何IV族半导体或复合半导体材料。作为示例，成核层140和缓冲层144两者均包括III/V族材料诸如GaAs、GaInAs，或如本文所述被掺杂以提供期望的导电性的其他III/V族材料。用于外延地生长缓冲层144的技术在本领域中是众所周知的。可以采用任何合适的外延生长技术。
成核层140和缓冲层144的生长条件可以被选择为在这些层的生长期间控制期望的掺杂剂诸如Ga、In或As到基底基板102中的扩散。特别地，当采用III/V材料的生长以形成缓冲层144时，可以选择成核层，以形成对III族或V族元素中的一种的选择性阻挡层(barrier)，同时允许其他元素扩散通过。因此，成核层140可以阻碍V族元素的扩散，而可以作为p型掺杂剂起作用的III族元素被允许扩散通过成核层140并进入基底基板102中，以形成钝化层132。另选地，成核层可以形成对III族元素的阻挡层，而可以作为n型的掺杂剂起作用的V族元素被允许扩散通过成核层140并进入基底基板102中，以形成钝化层132。成核层和扩散层的生长条件被选择为使得到基底基板中的掺杂剂扩散的量不高，以便反掺杂(counter-dope)掺杂阱区域106并改变该掺杂阱区域106的多数载流子类型(例如，如果掺杂阱区域106是n型，则p型III族掺杂剂扩散足够小，以便不将n型发射极改变回到p型区域，反之亦然)。选择合适的成核材料以提供III族和/或V族元素的扩散的期望控制在本领域的普通技术范围内。
具有本公开的图案化发射极配置的太阳能电池的限制是图案化发射极阱区域之间的横向电流收集减少和扩展电流的电阻增加的可能性，如在图4中由箭头所示。为改善这种可能性问题，成核层140和/或缓冲层144可以在充分高的掺杂剂浓度下掺杂，以提供期望的横向导电性水平。期望的横向导电性水平将取决于许多因素，诸如图案化发射极之间的间距、发射极的特定设计和太阳能电池的应用，例如空间太阳能电池对(vs)聚光太阳能电池。在图案化发射极上的层中的增加的导电性(或减小的电阻率)可以导致从发射极流流动到上部结构120中的子电池的横向电流的电阻减小，这可以反过来减少串联电阻损耗并增加太阳能电池的效率。作为示例，成核层140和/或缓冲层144可以掺杂有充足浓度的掺杂剂，使得横向导电性可以足够高，使得图案化发射极不显著地造成电池的总体串联电阻损耗。成核层和/或缓冲层的电阻率的范围可以例如从约0.1mΩ-cm至约10,000mΩ-cm，诸如约0.5mΩ-cm至约500mΩ-cm。
盖层148可以在最后子电池上形成。盖层148用作在金属和半导体之间的过渡的功能。盖层148可以是低电阻并提供在金属和半导体之间的欧姆接触(非整流)。这减少寄生电阻损耗或使太阳能电池的二极管反向的无意的(un-intentional)二极管行为，这可以降低器件的效率。盖层148也可以提供将触点(外部电线)机械地附接到由金属层介导的(mediate)半导体。用于在太阳能电池中使用的此类盖层在本领域中通常是众所周知的。
参照图2，电后部触点126和前部触点128可以使用任何合适的技术沉积。进一步地，可以采用任何其他的正电触点和负电触点配置。例如，代替如图2中所示的前部触点和后部触点，正触点和负触点两者均可以潜在地在器件的前部上形成，或者两者均可以在器件的后部上形成，诸如通过蚀刻触点通孔(via)以提供到器件内的一个或更多个层的电触点。确定用于形成此类太阳能电池触点的合适技术是在本领域的普通技术内。
除了或代替电后部触点126，可以邻近基底基板102形成反射层。例如，反射层127可以沉积在基底基板102和后部电极126之间。在一些情况下，后部触点126可以包括反射层的一部分。合适的反射层和制作用于太阳能电池的此类结构的方法在本领域中是众所周知的。例如，在Si器件中，将薄Al2O3层沉积在硅和器件的后部触点之间是已知的。这用作在后表面上的反射镜，用于从太阳能电池发射的光。
上部结构120的缓冲层、隧道结、子电池和任选地成核层可以是单片结构，意味着这些层全部形成作为共享一组电触点的子电池的单个堆叠的一部分。另选地，多结太阳能电池堆叠的每个子电池可以具有其自身的一组触点，以便形成如在本领域中通常众所周知的串联(tandom)结构。在示例中，串联太阳能电池结构不采用隧道结作为上部结构120的一部分。
上部结构120还可以包括一个或更多个有机子电池。作为示例，一个或更多个子电池各自包括钙钛矿材料。有机子电池的示例在图5中示出，其中导电层150定位在基底基板102和有机子电池之间。包括图案化发射极104和钝化层132的基底基板102参照图2在上面描述。在示例中，作为基底基板102采用的IV族半导体材料是单晶硅，诸如n掺杂的或p掺杂的硅，但是也可以采用单晶锗基板。导电层150可以包括任何合适的导电材料，包括掺杂的或本征导电的材料。用于导电层150的材料可以具有与基底基板102的多数载流子类型相反的多数载流子类型(例如，如果背景掺杂剂在基底基板102中是n型，则导电层150包括p型材料，反之亦然)。选择用于导电层150的合适的导电材料在本领域的普通技术范围内。
有机空穴传输介质(“HTM”)152定位在导电层150上。有机空穴传输介质的示例是Spiro-OmeTAD(螺环二芴)，并且可以采用任何其他合适的有机HTM。半导电钙钛矿层154定位在空穴传输介质152上。可以采用任何合适的半导电钙钛矿材料，诸如有机金属卤化物钙钛矿材料，例如甲胺碘化铅(“MAPbI3”)。作为发射极起作用的第二导电层156定位在半导电钙钛矿层154上。通常地，导电层146可以包括任何合适的导电材料，包括n型或p型的材料。例如，第二导电层156可以包括n型导电金属氧化物材料，诸如氧化铟锡(“ITO”)、铝锡氧化物(“ATO”，其是具有添加的铝的ITO)或它们的组合。第二导电层156具有与基底基板102的背景掺杂剂相同的多数载流子类型(例如，如果背景掺杂剂是n型，则第二导电层156为n型，或者如果背景掺杂剂是p型，则第二导电层156为p型)。第二导电层156可以任选地对可见光是透明的，如在其中第二导电层156包括导电金属氧化物诸如ITO或ATO的情况下。前部触点128可以定位在第二导电层156上。
图6的多结太阳能电池100类似于图5的太阳能电池，除了图6的太阳能电池包括定位在基底基板102和上部结构120的一个或更多个子电池之间的第二钝化层160。第二钝化层160通常可以在非外延上部结的情况下采用。例如，第二钝化层160可以直接地定位在第一钝化层132上并定位在图案化发射极104上。另选地，第二钝化层160可以代替钝化层132使用。第二钝化层160可以帮助减少或阻止基底基板102的背景掺杂区域中的载流子的复合，类似于钝化层132的功能。第二钝化层160可以包括与多结太阳能电池100相容的(compatible)任何合适电绝缘材料。例如，第二钝化层160可以包括选自氧化物诸如氧化铝(Al2O3)、蓝宝石、微晶硅或非晶硅的绝缘材料。导电通孔162延伸通过第二钝化层160，以将图案化发射极104的多个掺杂阱区域106中的每个电连接到一个或更多个子电池。
当图案化发射极104已经在本文被描述为在基底基板102的下部子电池中形成时，该想法是通用的并且可以应用于堆叠内的任何子电池。例如，图案化发射极104可以在子电池122和124的外延生长层中形成，如图9中所示。为形成发射极，外延过程可以在堆叠中的发射极要定位在其中的期望位置处停止，并且然后可以将发射极图案化。在发射极形成之后，外延生长继续在多步骤外延生长过程中形成上部子电池。每当发射极要形成时，此过程可以重复。
本公开的图2至图6和图9示出了包括本公开的多结太阳能电池的基板、掺杂区域和层的各种器件元件。包括任何基板、掺杂区域和/或层的每个器件元件可以与在附图中被示出为与其相邻的任何其他器件元件直接接触。另选地，被示出为与彼此相邻的器件元件中的任何两个或更多个器件元件可以不直接接触，但是相反可以具有未示出在其间形成的介于中间的器件元件。如本文使用的描述器件元件之间的关系的术语“在上面(on)”和“在上方(over)”被广泛地限定，以包括介于中间的器件元件，并且因此不要求直接物理接触或任何特定空间关系(例如，定位“在基板上方”或定位在“基板上面”的层可以定位在该基板的一侧之上、之下或者定位到该基板的一侧，并且一个或更多个介于中间的层可以存在于层和基板之间)。短语“直接地在上面”或“与……直接接触”被限定为意味着有直接物理接触。
如由图7的流程图所示，本公开还涉及制备用于多结太阳能电池制造的基底基板102的方法。该方法包括提供包括IV族半导体和第一载流子类型的背景掺杂剂的初始单晶基板。该基板包括第一主要表面和与第一主要表面相对的第二主要表面。此类IV族半导体基板是众所周知的，并且例如容易以晶片形式获得。该基板的表面可以被任选地制备以用于由任何期望的方法处理，所述方法可包括清洁基板、移除天然氧化物等。
然后图案化发射极104在该基板的第一主要表面处形成。任何合适的技术均可以用于形成图案化发射极104的掺杂阱区域106。例如，可以将掺杂剂引入到基底基板102，以通过掩蔽(masking)和沉积掺杂剂材料，通过印刷掺杂剂材料，或通过离子植入技术形成掺杂阱区域106。可以实行一个或更多个退火过程，以在掺杂剂引入到基底基板期间或之后提供期望的掺杂剂扩散。作为掺杂技术的一个示例，基底基板102可以用掩模层诸如例如保护性氧化物、氮化物或光刻胶进行图案化。然后通过在基底基板102的IV族半导体材料中引入第二载流子类型的掺杂剂，诸如通过在其上方未形成掩模层的基板的区域中沉积和扩散掺杂剂，形成多个掺杂阱区域106。在另一个示例中，掺杂剂糊状物(例如，磷掺杂的糊状物)以期望的阱区域图案丝网印刷到基底基板上，随后通过退火以将掺杂剂从糊状物扩散到基板中。可以采用其他合适的技术诸如包含包括掺杂剂的油墨的纳米颗粒的油墨印刷和/或激光诱导扩散技术用于形成掺杂阱区域。此类技术在本领域中通常是众所周知的。
然后任选地制备基板的第一主要表面，用于形成附加的太阳能电池结构。例如，在要在沉积在基底基板上的单晶III-V半导体堆叠中形成附加子电池的情况下，可以使用任何合适的技术诸如化学机械抛光将基底基板抛光到外延准备条件。另选地，抛光可以在图案化发射极104的形成之前发生。然后，所抛光的基板可以经化学处理，以清洁基板并从包括图案化发射极的表面移除任何天然氧化物。然后，所制备的基底基板可以任选地通过存储在惰性气氛中被维持在外延准备状态中，以减少天然氧化物在其上的生长。
可以继续基底基板的处理，以在基底基板上形成一个或更多个附加的太阳能电池器件结构，从而完成多结太阳能电池的制造。另选地，基底基板可以提供给第三方太阳能电池制造商，以完成多结太阳能电池的制造。
钝化层132的形成可以在上部结构120的沉积之前、期间或之后发生。钝化层132是在基底基板102的IV族半导体材料中的掺杂区域。可以采用用于形成此类掺杂区域的任何合适方法。作为示例，p型或n型掺杂剂可以从成核层140和/或缓冲层144扩散到基底基板102中，以形成钝化层132。如上所述，该掺杂剂是与用作用于基底基板102的背景掺杂剂的类型相同的掺杂剂类型(例如，p型或n型)。
图8是在III/V多结太阳能电池下具有理想化的减少的发射极触点的锗子电池的估计电压的曲线图。该估计是基于与图3中所示的类似的发射极图案，其中发射极是0.7微米深的圆点并具有50微米的直径D。间距(在相邻点的中心之间的距离)从直径的约2倍至直径的约10倍变化。如可以从图8所见，随着间距增大(指示发射极体积减小)，子电池电压(Voc)增大。据信，减小的发射极体积在发射极中引起下部总体肖克莱-里德-霍尔(Shockley-Read-Hall)复合，从而使子电池电压增加。电压的增加假设在扩散区域之间的界面复合速率(“So”)是低的(例如，So接近0cm/s)。此方法的实际效果是增加将太阳光转化为电力(power)的效率，从而使太阳能电池更加成本有效。
进一步地，本公开包括根据以下实施例的示例：
实施例1.一种多结太阳能电池，其包括：基底基板，其包括IV族半导体和第一载流子类型的掺杂剂；图案化发射极，其在基底基板的第一表面处形成，图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域，基底基板包括形成第一太阳能子电池的图案化发射极；以及上部结构，其包括在第一太阳能子电池上方的一个或更多个附加太阳能子电池。
实施例2.根据实施例1所述的多结太阳能电池，其进一步包括在基底基板的第一表面处的钝化层，该钝化层定位在图案化发射极的阱区域之间并且包括第一载流子类型的掺杂剂。
实施例3.根据实施例1或2所述的多结太阳能电池，其中IV族半导体包括选自锗和硅的材料。
实施例4.根据实施例1至3中任一项所述的多结太阳能电池，其中第一载流子类型的掺杂剂是p型掺杂剂，并且第二载流子类型的掺杂剂是n型掺杂剂。
实施例5.根据实施例1至4中任一项所述的多结太阳能电池，其中第一载流子类型的掺杂剂是n型掺杂剂，并且第二载流子类型的掺杂剂是p型掺杂剂。
实施例6.根据实施例1至5中任一项所述的多结太阳能电池，其中图案化发射极的阱区域定位成阵列。
实施例7.根据实施例1至6中任一项所述的多结太阳能电池，其中该基底基板包括单晶锗，并且一个或更多个附加太阳能子电池各自包括在III/V异质外延层中形成的pn结。
实施例8.根据实施例7所述的多结太阳能电池，其进一步包括在图案化发射极和一个或更多个附加太阳能子电池之间的III/V异质外延层中形成的隧道结。
实施例9.根据实施例7或8所述的多结太阳能电池，其进一步包括在图案化发射极和一个或更多个附加太阳能子电池之间的电流扩展层。
实施例10.根据实施例1至9中任一项所述的多结太阳能电池，其中一个或更多个附加太阳能子电池各自包括在半导电钙钛矿材料中形成的pn结。
实施例11.根据实施例10所述的多结太阳能电池，其进一步包括在图案化发射极和一个或更多个附加太阳能子电池之间的导电层。
实施例12.根据实施例10或11所述的多结太阳能电池，其进一步包括在基底基板和一个或更多个附加太阳能子电池之间的钝化层，该钝化层包括绝缘材料，导电通孔，该导电通孔延伸通过该钝化层以将图案化发射极的多个阱区域中的每个电连接到一个或更多个附加太阳能子电池。
实施例13.根据实施例1至12中任一项所述的多结太阳能电池，其进一步包括被定位成将多结太阳能电池连接到电路的多个触点。
实施例14.一种制作多结太阳能电池的方法，所述方法包括：提供包括IV族半导体和第一载流子类型的掺杂剂的基底基板，该基底基板具有第一主要表面和与第一主要表面相对的第二主要表面；在基底基板的第一主要表面处形成图案化发射极，该图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域，基底基板包括形成第一太阳能子电池的图案化发射极；以及形成上部结构，该上部结构包括在第一太阳能子电池上方的一个或更多个附加太阳能子电池。
实施例15.根据实施例14所述的方法，其中一个或更多个附加太阳能子电池各自包括在III/V异质外延层中形成的pn结。
实施例16.根据实施例15所述的方法，其进一步包括在图案化发射极和一个或更多个附加太阳能子电池之间的III/V异质外延层中形成的隧道结。
实施例17.根据实施例15所述的方法，其进一步包括在图案化发射极和一个或更多个附加太阳能子电池之间的电流扩展层。
实施例18.根据实施例14至17中任一项所述的方法，其中一个或更多个附加太阳能子电池各自包括在半导电钙钛矿材料中形成的pn结。
实施例19.根据实施例18所述的方法，其进一步包括在图案化发射极和一个或更多个附加太阳能子电池之间的导电层。
实施例20.根据实施例18或19所述的方法，其进一步包括在基底基板和一个或更多个附加太阳能子电池之间的钝化层，该钝化层包括绝缘材料，导电通孔，该导电通孔延伸通过钝化层以将图案化发射极的多个阱区域中的每个电连接到一个或更多个附加太阳能子电池。
实施例21.一种制作太阳能电池基板的方法，所述方法包括：提供包括IV族半导体和第一载流子类型的掺杂剂的基底基板，该基底基板具有第一主要表面和与第一主要表面相对的第二主要表面；在基底基板的第一主要表面处形成图案化发射极，该图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域，基底基板包括形成太阳能子电池的图案化发射极；以及制备基底基板的第一主要表面，以接收外延层。
实施例22.根据实施例21所述的方法，其中制备基底基板的第一主要表面以接收外延层包括：抛光基底基板；在抛光之后化学处理基底基板；以及在惰性气氛中存储化学处理的基底基板，以减少天然氧化物在其上的生长。
实施例23.根据实施例21或22所述的方法，其中基底基板包括单晶锗。
实施例24.根据实施例21至23中任一项所述的方法，其进一步包括：提供基底基板给太阳能电池制造商用于制造太阳能电池。
实施例25.一种太阳能电池基板，其包括：基底基板，其包括IV族半导体和第一载流子类型的掺杂剂，该基底基板具有第一主要表面和与第一主要表面相对的第二主要表面，第一主要表面准备好外延；图案化发射极，其在基底基板的第一主要表面处形成，该图案化发射极包括在IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域，基底基板包括形成第一太阳能子电池的图案化发射极。
实施例26.根据实施例25所述的太阳能电池基板，其中基底基板是单晶锗。
虽然详细阐述本公开的广泛范围的数值范围和参数设置是近似值，但是仍尽可能准确地报告在具体示例中详细阐述的数值。然而，任何数值固有地包含必要地由在其相应测试测量中发现的标准偏差引起的某些误差。此外，本文公开的所有范围应当理解为包含归入本文的任何及所有子范围。
虽然本教导已经相对于一个或更多个实施方式示出，但是可以对所示的示例做出更改和/或修改，而不背离随附权利要求的精神和范围。另外，虽然本教导的特定特征可以已经相对于若干实施方式中的仅一种实施方式公开，但是此类特征可以与如对于任何给定或特定功能可以是期望的和有利的其他实施方式的一个或更多个其他特征组合。此外，对于在详细描述和权利要求中使用术语“包含(including)”、“包括(includes)”、“具有(having)”、“具有(has)”、“带有(with)”或它们的变型而言，此类术语旨在以与术语“包括(comprising)”类似的方式包括。进一步地，在本文的讨论和权利要求中，术语“约(about)”指示所列的值可以在某种程度上改变，只要该改变不导致过程或结构与本文所述的预期目的不相符。最后，“示例性”指示本描述作为示例使用，而不暗指本描述是理想的。
将理解的是，上面公开的和其他的特征和功能的变型或它们的替代物可以组合到许多其他不同系统或应用中。在其中各种目前未预见或未预期的替代、修改、变化或改进可以随后由本领域的技术人员做出，所述替代、修改、变化或改进也旨在由随附权利要求涵盖。

Claims (20)

1.一种多结太阳能电池100，其包括：
基底基板102，其包括IV族半导体和第一载流子类型的掺杂剂；
图案化发射极104，其在所述基底基板的第一表面处形成，所述图案化发射极包括在所述IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域106，所述基底基板102包括形成第一太阳能子电池的所述图案化发射极；以及
上部结构120，其包括在所述第一太阳能子电池上方的一个或更多个附加太阳能子电池。
2.根据权利要求1所述的多结太阳能电池，其进一步包括在所述基底基板102的所述第一表面处的钝化层132，所述钝化层定位在所述图案化发射极的所述阱区域106之间并且包括所述第一载流子类型的掺杂剂。
3.根据权利要求1或2所述的多结太阳能电池，其中所述IV族半导体包括选自锗和硅的材料。
4.根据权利要求1所述的多结太阳能电池，其中所述第一载流子类型的所述掺杂剂是p型掺杂剂，并且所述第二载流子类型的所述掺杂剂是n型掺杂剂。
5.根据权利要求1所述的多结太阳能电池，其中所述第一载流子类型的所述掺杂剂是n型掺杂剂，并且所述第二载流子类型的所述掺杂剂是p型掺杂剂。
6.根据权利要求1所述的多结太阳能电池，其中所述图案化发射极104的所述阱区域106定位成阵列。
7.根据权利要求1所述的多结太阳能电池，其中所述基底基板102包括单晶锗，并且所述一个或更多个附加太阳能子电池各自包括在III/V异质外延层中形成的pn结。
8.根据权利要求7所述的多结太阳能电池，其进一步包括在所述图案化发射极104和所述一个或更多个附加太阳能子电池之间的III/V异质外延层中形成的隧道结136、138。
9.根据权利要求7或8所述的多结太阳能电池，其进一步包括在所述图案化发射极104和所述一个或更多个附加太阳能子电池之间的电流扩展层。
10.根据权利要求1所述的多结太阳能电池，其中所述一个或更多个附加太阳能子电池各自包括在半导体钙钛矿材料中形成的pn结。
11.根据权利要求10所述的多结太阳能电池，其进一步包括在所述图案化发射极104和所述一个或更多个附加太阳能子电池之间的导电层。
12.根据权利要求10或11所述的多结太阳能电池，其进一步包括在所述基底基板102和所述一个或更多个附加太阳能子电池之间的钝化层132，所述钝化层包括绝缘材料，导电通孔，所述导电通孔延伸通过所述钝化层以将所述图案化发射极的所述多个阱区域106中的每个阱区域电连接到所述一个或更多个附加太阳能子电池。
13.根据权利要求1所述的多结太阳能电池，其进一步包括被定位成将所述多结太阳能电池连接到电路130的多个触点126、128。
14.一种制作多结太阳能电池100的方法，所述方法包括：
提供包括IV族半导体和第一载流子类型的掺杂剂的基底基板102，所述基底基板具有第一主要表面和与所述第一主要表面相对的第二主要表面；
在所述基底基板的所述第一主要表面处形成图案化发射极104，所述图案化发射极包括在所述IV族半导体中掺杂有第二载流子类型的掺杂剂的多个阱区域106，所述基底基板包括形成第一太阳能子电池的所述图案化发射极；以及
形成上部结构，所述上部结构包括在所述第一太阳能子电池上方的一个或更多个附加太阳能子电池。
15.根据权利要求14所述的方法，其中所述一个或更多个附加太阳能子电池各自包括在III/V异质外延层中形成的pn结。
16.根据权利要求15所述的方法，其进一步包括在所述图案化发射极104和所述一个或更多个附加太阳能子电池之间的III/V异质外延层中形成的隧道结136、138。
17.根据权利要求15所述的方法，其进一步包括在所述图案化发射极104和所述一个或更多个附加太阳能子电池之间的电流扩展层。
18.根据权利要求14所述的方法，其中所述一个或更多个附加太阳能子电池各自包括在半导体钙钛矿材料中形成的pn结。
19.根据权利要求18所述的方法，其进一步包括在所述图案化发射极104和所述一个或更多个附加太阳能子电池之间的导电层。
20.根据权利要求18或19所述的方法，其进一步包括在所述基底基板102和所述一个或更多个附加太阳能子电池之间的钝化层132，所述钝化层包括绝缘材料，导电通孔，所述导电通孔延伸通过所述钝化层以将所述图案化发射极的所述多个阱区域106中的每个阱区域电连接到所述一个或更多个附加太阳能子电池。
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