JP2018137425A - パターニングされたエミッタを有する多接合太陽電池及び該太陽電池の製造方法 - Google Patents
パターニングされたエミッタを有する多接合太陽電池及び該太陽電池の製造方法 Download PDFInfo
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- JP2018137425A JP2018137425A JP2017234758A JP2017234758A JP2018137425A JP 2018137425 A JP2018137425 A JP 2018137425A JP 2017234758 A JP2017234758 A JP 2017234758A JP 2017234758 A JP2017234758 A JP 2017234758A JP 2018137425 A JP2018137425 A JP 2018137425A
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- base substrate
- solar cell
- patterned emitter
- junction
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Abstract
Description
本開示の技術分野
本開示は、パターニングされたエミッタを使用する多接合太陽電池及び該太陽電池の製造方法に関する。
条項1.多接合太陽電池であって、IV族半導体と第1のキャリアタイプのドーパントとを含んでいるベース基板;ベース基板の第1の表面に形成されたパターニングされたエミッタであって、パターニングされたエミッタが、IV族半導体中に第2のキャリアタイプのドーパントでドープされた複数のウェル領域を備え、ベース基板が、第1のソーラーサブセルを形成するパターニングされたエミッタを含んでいる、パターニングされたエミッタ;及び第1のソーラーサブセルの上に1又は複数の追加のソーラーサブセルを備えている上部構造体を備える、多接合太陽電池。
条項2.ベース基板の第1の表面に不動態化層をさらに含んでおり、不動態化層がパターニングされたエミッタのウェル領域の間に配置され、かつ、第1のキャリアタイプのドーパントを含んでいる、条項1に記載の多接合太陽電池。
条項3.IV族半導体がゲルマニウム及びシリコンから選択される材料を含む、条項1又は2に記載の多接合太陽電池。
条項4.第1のキャリアタイプのドーパントがp型ドーパントであり、第2のキャリアタイプのドーパントがn型ドーパントである、条項1から3のいずれか一項に記載の多接合太陽電池。
条項5.第1のキャリアタイプのドーパントがn型ドーパントであり、第2のキャリアタイプのドーパントがp型ドーパントである、条項1から4のいずれか一項に記載の多接合太陽電池。
条項6.パターニングされたエミッタのウェル領域がアレイ状に配置されている、条項1から5いずれか一項に記載の多接合太陽電池。
条項7.ベース基板が単結晶ゲルマニウムと、III/Vヘテロエピタキシャル層に形成されたpn接合部をそれぞれが備えている1又は複数の追加のソーラーサブセルとを含む、条項1から6のいずれか一項に記載の多接合太陽電池。
条項8.パターニングされたエミッタと1又は複数の追加のソーラーサブセルとの間のIII/Vヘテロエピタキシャル層に形成されたトンネル接合部をさら備えている、条項7に記載の多接合太陽電池。
条項10.1又は複数の追加のソーラーサブセルがそれぞれ、半導電性ペロブスカイト材料で形成されたpn接合部を備える、条項1から9のいずれか一項に記載の多接合太陽電池。
条項11.パターニングされたエミッタと1又は複数の追加のソーラーサブセルとの間に導電層をさらに含んでいる、条項10に記載の多接合太陽電池。
条項12.ベース基板と1又は複数の追加のソーラーサブセルとの間に不動態化層をさらに含んでおり、不動態化層が絶縁材料を含んでおり、導電ビアが不動態化層を貫通して延びて、パターニングされたエミッタの複数のウェル領域のそれぞれを1又は複数の追加のソーラーサブセルと電気的に接続している、条項10又は11に記載の多接合太陽電池。
条項13.多接合太陽電池を回路に接続するように配置された複数の接点をさらに備えている、条項1から12のいずれか一項に記載の多接合太陽電池。
条項14.多接合太陽電池の製造方法であって、IV族半導体と第1のキャリアタイプのドーパントとを含むベース基板を提供することであって、ベース基板が第1の主面と第1の主面の反対側の第2の主面とを有する、提供すること;ベース基板の第1の主面のパターニングされたエミッタを形成することであって、パターニングされたエミッタが、IV族半導体中に第2のキャリアタイプのドーパントでドープされた複数のウェル領域を備え、ベース基板が、第1のソーラーサブセルを形成するパターニングされたエミッタを含んでいる、形成すること;及び第1のソーラーサブセルの上に1又は複数の追加のソーラーサブセルを含む上部構造体を形成することを含む、方法。
条項15.1又は複数の追加のソーラーサブセルがそれぞれ、III/Vヘテロエピタキシャル層に形成されたpn接合部を含んでいる、条項14に記載の方法。
条項16.パターニングされたエミッタと1又は複数の追加のソーラーサブセルとの間のIII/Vヘテロエピタキシャル層に形成されたトンネル接合部をさらに備えている、条項15に記載の方法。
条項17.パターニングされたエミッタと1又は複数の追加のソーラーサブセルとの間の電流拡散層をさらに含んでいる、条項15に記載の方法。
条項18.1又は複数の追加のソーラーサブセルがそれぞれ、半導電性ペロブスカイト材料で形成されたpn接合部を備える、条項14から17のいずれか一項に記載の方法。
条項19.パターニングされたエミッタと1又は複数の追加のソーラーサブセルとの間に導電層をさらに含んでいる、条項18に記載の方法。
条項20.ベース基板と1又は複数の追加のソーラーサブセルとの間に不動態化層をさらに含んでおり、不動態化層が絶縁材料を含んでおり、導電ビアが不動態化層を貫通して延びて、パターニングされたエミッタの複数のウェル領域のそれぞれを1又は複数の追加のソーラーサブセルと電気的に接続している、条項18又は19に記載の方法。
条項21.太陽電池基板の製造方法であって、IV族半導体と第1のキャリアタイプのドーパントとを含むベース基板を提供することであって、ベース基板が第1の主面と第1の主面の反対側の第2の主面とを有する、提供すること;ベース基板の第1の主面のパターニングされたエミッタを形成することであって、パターニングされたエミッタが、IV族半導体中に第2のキャリアタイプのドーパントでドープされた複数のウェル領域を備え、ベース基板が、第1のソーラーサブセルを形成するパターニングされたエミッタを含んでいる、形成すること;及びエピタキシャル層を受容するようにベース基板の第1の主面を準備することを含む、方法。
条項22.エピタキシャル層を受容するようにベース基板の第1の主面を準備することが、ベース基板を研磨すること;研磨後にベース基板を化学的に処理すること;及び化学的に処理されたベース基板を不活性雰囲気中に保存して、その上の天然酸化物の成長を抑えることを含む、条項21に記載の方法。
条項23.ベース基板が単結晶ゲルマニウムを含む、条項21又は22に記載の方法。
条項25.太陽電池基板であって、IV族半導体と第1のキャリアタイプのドーパントとを含むベース基板であって、ベース基板が第1の主面と第1の主面の反対側の第2の主面とを有し、第1の主面がエピタキシャル可能状態であるベース基板と;ベース基板の第1の主面に形成されたパターニングされたエミッタであって、パターニングされたエミッタが、IV族半導体中に第2のキャリアタイプのドーパントでドープされた複数のウェル領域を備え、ベース基板が、第1のソーラーサブセルを形成するパターニングされたエミッタを含んでいる、パターニングされたエミッタとを備える、太陽電池基板。
条項26.ベース基板が単結晶ゲルマニウムである、条項25に記載の太陽電池基板。
Claims (26)
- 多接合太陽電池(100)であって、
IV族半導体と第1のキャリアタイプのドーパントとを含んでいるベース基板(102);
前記ベース基板の第1の表面に形成されたパターニングされたエミッタ(104)であって、前記パターニングされたエミッタ(104)が、前記IV族半導体中に第2のキャリアタイプのドーパントでドープされた複数のウェル領域(106)を備え、前記ベース基板(102)が、第1のソーラーサブセル(122)を形成する前記パターニングされたエミッタ(104)を含んでいる、パターニングされたエミッタ;及び
前記第1のソーラーサブセルの上に1又は複数の追加のソーラーサブセルを備えている上部構造体(120)
を備える、多接合太陽電池。 - 前記ベース基板(102)の前記第1の表面に不動態化層(132)をさらに含んでおり、前記不動態化層が前記パターニングされたエミッタ(104)の前記ウェル領域(106)の間に配置され、かつ、前記第1のキャリアタイプのドーパントを含んでいる、請求項1に記載の多接合太陽電池。
- 前記IV族半導体が、ゲルマニウム及びシリコンから選択される材料を含む、請求項1又は2に記載の多接合太陽電池。
- 前記第1のキャリアタイプの前記ドーパントがp型ドーパントであり、前記第2のキャリアタイプの前記ドーパントがn型ドーパントである、請求項1から3のいずれか一項に記載の多接合太陽電池。
- 前記第1のキャリアタイプの前記ドーパントがn型ドーパントであり、前記第2のキャリアタイプの前記ドーパントがp型ドーパントである、請求項1から4のいずれか一項に記載の多接合太陽電池。
- 前記パターニングされたエミッタ(104)の前記ウェル領域(106)がアレイで配置されている、請求項1から5いずれか一項に記載の多接合太陽電池。
- 前記ベース基板(102)が、単結晶ゲルマニウムと、III/Vヘテロエピタキシャル層に形成されたpn接合部をそれぞれが備えている前記1又は複数の追加のソーラーサブセルとを備える、請求項1から6のいずれか一項に記載の多接合太陽電池。
- 前記パターニングされたエミッタ(104)と前記1又は複数の追加のソーラーサブセルとの間のIII/Vヘテロエピタキシャル層に形成されたトンネル接合部(136)、(138)をさらに備えている、請求項7に記載の多接合太陽電池。
- 前記パターニングされたエミッタ(104)と前記1又は複数の追加のソーラーサブセルとの間の電流拡散層をさらに含んでいる、請求項7又は8に記載の多接合太陽電池。
- 前記1又は複数の追加のソーラーサブセルがそれぞれ半導電性ペロブスカイト材料で形成されたpn接合部を備える、請求項1から9のいずれか一項に記載の多接合太陽電池。
- 前記パターニングされたエミッタ(104)と前記1又は複数の追加のソーラーサブセルとの間に導電層をさらに含んでいる、請求項10に記載の多接合太陽電池。
- 前記ベース基板(102)と前記1又は複数の追加のソーラーサブセルとの間に不動態化層(132)をさらに含んでおり、前記不動態化層が絶縁材料を含んでおり、導電ビアが前記不動態化層を貫通して延びて、前記パターニングされたエミッタの前記複数のウェル領域(106)のそれぞれを前記1又は複数の追加のソーラーサブセルと電気的に接続している、請求項10又は11に記載の多接合太陽電池。
- 前記多接合太陽電池(100)を回路(130)に接続するように配置された複数の接点(128)、(126)をさらに備えている、請求項1から12のいずれか一項に記載の多接合太陽電池。
- 多接合太陽電池(100)を製造する方法であって、
IV族半導体と第1のキャリアタイプのドーパントとを含むベース基板(102)を提供することであって、前記ベース基板が第1の主面と前記第1の主面の反対側の第2の主面とを有する、提供すること;
前記ベース基板の前記第1の主面にパターニングされたエミッタ(104)を形成することであって、前記パターニングされたエミッタが、前記IV族半導体中に第2のキャリアタイプのドーパントでドープされた複数のウェル領域(106)を備え、前記ベース基板が第1のソーラーサブセルを形成する前記パターニングされたエミッタを含んでいる、形成すること;及び
前記第1のソーラーサブセルの上に1又は複数の追加のソーラーサブセルを備えている上部構造体を形成すること
を含む、方法。 - 前記1又は複数の追加のソーラーサブセルがそれぞれ、III/Vヘテロエピタキシャル層に形成されたpn接合部を備えている、請求項14に記載の方法。
- 前記パターニングされたエミッタ(104)と前記1又は複数の追加のソーラーサブセル(122)、(124)との間のIII/Vヘテロエピタキシャル層に形成されたトンネル接合部(136)、(138)をさらに備えている、請求項15に記載の方法。
- 前記パターニングされたエミッタ(104)と前記1又は複数の追加のソーラーサブセル(122)、(124)との間の電流拡散層をさらに含んでいる、請求項15に記載の方法。
- 前記1又は複数の追加のソーラーサブセルがそれぞれ、半導電性ペロブスカイト材料で形成されたpn接合部を備える、請求項14から17のいずれか一項に記載の方法。
- 前記パターニングされたエミッタ(104)と前記1又は複数の追加のソーラーサブセル(122)、(124)との間の導電層をさらに含んでいる、請求項18に記載の方法。
- 前記ベース基板(102)と前記1又は複数の追加のソーラーサブセル(122)、(124)との間に不動態化層(132)をさらに含んでおり、前記不動態化層(132)が絶縁材料を含んでおり、導電ビアが前記不動態化層を貫通して延びて、前記パターニングされたエミッタの前記複数のウェル領域(106)のそれぞれを前記1又は複数の追加のソーラーサブセルと電気的に接続している、請求項18又は19に記載の方法。
- 太陽電池基板であって、
IV族半導体と第1のキャリアタイプのドーパントとを含むベース基板(102)であって、第1の主面と前記第1の主面の反対側の第2の主面とを有し、前記第1の主面がエピタキシャル可能状態であるベース基板と、
前記ベース基板の前記第1の主面に形成されたパターニングされたエミッタ(104)であって、前記パターニングされたエミッタが、前記IV族半導体中に第2のキャリアタイプのドーパントでドープされた複数のウェル領域(106)を備え、前記ベース基板が、第1のソーラーサブセルを形成する前記パターニングされたエミッタを含んでいる、パターニングされたエミッタと
を備える、太陽電池基板。 - ベース基板(102)が単結晶ゲルマニウムである、請求項21に記載の太陽電池基板。
- 太陽電池基板を製造する方法であって、
IV族半導体と第1のキャリアタイプのドーパントとを含むベース基板(106)を提供することであって、前記ベース基板が第1の主面と前記第1の主面の反対側の第2の主面とを有する、提供すること;
前記ベース基板の前記第1の主面にパターニングされたエミッタ(104)を形成することであって、前記パターニングされたエミッタが、前記IV族半導体中に第2のキャリアタイプのドーパントでドープされた複数のウェル領域(106)を備え、前記ベース基板がソーラーサブセルを形成する前記パターニングされたエミッタを含んでいる、形成すること;及び
エピタキシャル層を受容するように前記ベース基板の前記第1の主面を準備すること
を含む、方法。 - エピタキシャル層を受容するように前記ベース基板の前記第1の主面を準備することが、
前記ベース基板を研磨すること;
研磨後に、前記ベース基板を化学的に処理すること;及び
前記化学的に処理されたベース基板を不活性雰囲気中に保存して、その上の天然酸化物の成長を抑えること
を含む、請求項23に記載の方法。 - 前記ベース基板が単結晶ゲルマニウムを含む、請求項23又は24に記載の方法。
- 太陽電池を製造するために、太陽電池製造業者に前記ベース基板(102)を提供することをさらに含んでいる、請求項23から25のいずれか一項に記載の方法。
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