CN108183058B - 载置台和等离子体处理装置 - Google Patents
载置台和等离子体处理装置 Download PDFInfo
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- CN108183058B CN108183058B CN201711284031.4A CN201711284031A CN108183058B CN 108183058 B CN108183058 B CN 108183058B CN 201711284031 A CN201711284031 A CN 201711284031A CN 108183058 B CN108183058 B CN 108183058B
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- focus ring
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- insertion hole
- susceptor
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- 238000003780 insertion Methods 0.000 claims abstract description 49
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- 238000005530 etching Methods 0.000 description 16
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
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- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32431—Constructional details of the reactor
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3344—Problems associated with etching isotropy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Treatment Of Fiber Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-238399 | 2016-12-08 | ||
| JP2016238399A JP6812224B2 (ja) | 2016-12-08 | 2016-12-08 | 基板処理装置及び載置台 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108183058A CN108183058A (zh) | 2018-06-19 |
| CN108183058B true CN108183058B (zh) | 2020-03-10 |
Family
ID=62489671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711284031.4A Active CN108183058B (zh) | 2016-12-08 | 2017-12-07 | 载置台和等离子体处理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20180166259A1 (enExample) |
| JP (1) | JP6812224B2 (enExample) |
| KR (1) | KR102432446B1 (enExample) |
| CN (1) | CN108183058B (enExample) |
| TW (1) | TWI766908B (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| KR102689380B1 (ko) | 2016-01-26 | 2024-07-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 에지 링 리프팅 솔루션 |
| CN116110846A (zh) | 2016-01-26 | 2023-05-12 | 应用材料公司 | 晶片边缘环升降解决方案 |
| US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US11004722B2 (en) | 2017-07-20 | 2021-05-11 | Applied Materials, Inc. | Lift pin assembly |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US10535549B2 (en) | 2017-10-27 | 2020-01-14 | Applied Materials, Inc. | Lift pin holder |
| CN118380375A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| US10600623B2 (en) | 2018-05-28 | 2020-03-24 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| CN109065479B (zh) * | 2018-07-27 | 2020-06-16 | 上海华力集成电路制造有限公司 | 硅刻蚀机及其操作方法 |
| CN109192696B (zh) * | 2018-08-10 | 2021-06-08 | 北京北方华创微电子装备有限公司 | 升降针系统、真空反应腔室以及半导体加工设备 |
| CN111052344B (zh) | 2018-08-13 | 2024-04-02 | 朗姆研究公司 | 边缘环组件 |
| JP7105666B2 (ja) * | 2018-09-26 | 2022-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7076351B2 (ja) * | 2018-10-03 | 2022-05-27 | 東京エレクトロン株式会社 | プラズマ処理装置、及びリング部材の厚さ測定方法 |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| JP7134104B2 (ja) * | 2019-01-09 | 2022-09-09 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の載置台 |
| KR102702089B1 (ko) | 2019-03-22 | 2024-09-03 | 삼성전자주식회사 | 에지 링을 갖는 기판 처리 장치 |
| US11279032B2 (en) | 2019-04-11 | 2022-03-22 | Applied Materials, Inc. | Apparatus, systems, and methods for improved joint coordinate teaching accuracy of robots |
| US11101115B2 (en) | 2019-04-19 | 2021-08-24 | Applied Materials, Inc. | Ring removal from processing chamber |
| US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
| TWM588883U (zh) * | 2019-05-10 | 2020-01-01 | 美商蘭姆研究公司 | 半導體製程模組的中環 |
| US12165905B2 (en) | 2019-05-20 | 2024-12-10 | Applied Materials, Inc. | Process kit enclosure system |
| US10964584B2 (en) | 2019-05-20 | 2021-03-30 | Applied Materials, Inc. | Process kit ring adaptor |
| US11626305B2 (en) | 2019-06-25 | 2023-04-11 | Applied Materials, Inc. | Sensor-based correction of robot-held object |
| US11211269B2 (en) | 2019-07-19 | 2021-12-28 | Applied Materials, Inc. | Multi-object capable loadlock system |
| US20210035851A1 (en) * | 2019-07-30 | 2021-02-04 | Applied Materials, Inc. | Low contact area substrate support for etching chamber |
| TWM602283U (zh) * | 2019-08-05 | 2020-10-01 | 美商蘭姆研究公司 | 基板處理系統用之具有升降銷溝槽的邊緣環 |
| JP7465733B2 (ja) * | 2019-09-26 | 2024-04-11 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
| KR102747645B1 (ko) * | 2019-10-10 | 2024-12-27 | 삼성전자주식회사 | 정전 척 및 상기 정전 척을 포함하는 기판 처리 장치 |
| CN112750675A (zh) * | 2019-10-30 | 2021-05-04 | 中芯国际集成电路制造(上海)有限公司 | 等离子体刻蚀装置及其初始化系统和初始化方法 |
| KR102757512B1 (ko) * | 2019-11-25 | 2025-01-20 | 삼성전자주식회사 | 리프트 장치 및 이를 포함하는 기판 처리 장치 |
| US11370114B2 (en) | 2019-12-09 | 2022-06-28 | Applied Materials, Inc. | Autoteach enclosure system |
| TW202531381A (zh) * | 2020-03-03 | 2025-08-01 | 日商東京威力科創股份有限公司 | 基板支持台、電漿處理系統及環狀構件之安裝方法 |
| US12027397B2 (en) | 2020-03-23 | 2024-07-02 | Applied Materials, Inc | Enclosure system shelf including alignment features |
| US12486120B2 (en) | 2020-03-23 | 2025-12-02 | Applied Materials, Inc. | Substrate processing system carrier |
| JP7466686B2 (ja) | 2020-03-23 | 2024-04-12 | ラム リサーチ コーポレーション | 基板処理システムにおける中間リング腐食補償 |
| JP7454976B2 (ja) * | 2020-03-24 | 2024-03-25 | 東京エレクトロン株式会社 | 基板支持台、プラズマ処理システム及びエッジリングの交換方法 |
| JP7441711B2 (ja) * | 2020-04-13 | 2024-03-01 | 東京エレクトロン株式会社 | 基板支持台、プラズマ処理システム及びエッジリングの載置方法 |
| KR102615216B1 (ko) * | 2020-05-15 | 2023-12-15 | 세메스 주식회사 | 정전 척, 기판 처리 장치 및 기판 처리 방법 |
| USD980176S1 (en) | 2020-06-02 | 2023-03-07 | Applied Materials, Inc. | Substrate processing system carrier |
| USD954769S1 (en) | 2020-06-02 | 2022-06-14 | Applied Materials, Inc. | Enclosure system shelf |
| JP7409976B2 (ja) * | 2020-06-22 | 2024-01-09 | 東京エレクトロン株式会社 | プラズマ処理システム、プラズマ処理装置及びエッジリングの交換方法 |
| CN114530361B (zh) * | 2020-11-23 | 2024-08-06 | 中微半导体设备(上海)股份有限公司 | 下电极组件、等离子体处理装置和更换聚焦环的方法 |
| KR102251891B1 (ko) * | 2020-12-08 | 2021-05-13 | 주식회사 기가레인 | 기판 지지 장치 및 이를 이용한 기판 반출 방법 |
| US12159795B2 (en) | 2021-03-08 | 2024-12-03 | Applied Materials, Inc. | Enclosure system having walls comprising sidewalls and radio-frequency identifier holder coupled to rear wall |
| US20220293397A1 (en) * | 2021-03-10 | 2022-09-15 | Applied Materials, Inc. | Substrate edge ring that extends process environment beyond substrate diameter |
| JP7658475B1 (ja) * | 2024-01-25 | 2025-04-08 | Toto株式会社 | 静電チャック |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6238513B1 (en) * | 1999-12-28 | 2001-05-29 | International Business Machines Corporation | Wafer lift assembly |
| CN102208322A (zh) * | 2010-03-30 | 2011-10-05 | 东京毅力科创株式会社 | 等离子体处理装置和半导体装置的制造方法 |
| CN102243977A (zh) * | 2010-05-12 | 2011-11-16 | 东京毅力科创株式会社 | 等离子体处理装置及半导体装置的制造方法 |
| CN104900571A (zh) * | 2014-03-07 | 2015-09-09 | 沈境植 | 基板升降销及基板处理装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4417574B2 (ja) * | 2000-02-14 | 2010-02-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP3388228B2 (ja) | 2000-12-07 | 2003-03-17 | 株式会社半導体先端テクノロジーズ | プラズマエッチング装置、及びプラズマエッチング方法 |
| US7311784B2 (en) * | 2002-11-26 | 2007-12-25 | Tokyo Electron Limited | Plasma processing device |
| JP4884047B2 (ja) | 2006-03-23 | 2012-02-22 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| CN101583736A (zh) * | 2007-01-19 | 2009-11-18 | 应用材料股份有限公司 | 浸没式等离子体室 |
| JP2009054871A (ja) * | 2007-08-28 | 2009-03-12 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
| JP5650935B2 (ja) * | 2009-08-07 | 2015-01-07 | 東京エレクトロン株式会社 | 基板処理装置及び位置決め方法並びにフォーカスリング配置方法 |
| US8409995B2 (en) * | 2009-08-07 | 2013-04-02 | Tokyo Electron Limited | Substrate processing apparatus, positioning method and focus ring installation method |
| JP5759718B2 (ja) * | 2010-12-27 | 2015-08-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5690596B2 (ja) * | 2011-01-07 | 2015-03-25 | 東京エレクトロン株式会社 | フォーカスリング及び該フォーカスリングを備える基板処理装置 |
| JP5905735B2 (ja) * | 2012-02-21 | 2016-04-20 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法 |
| US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
-
2016
- 2016-12-08 JP JP2016238399A patent/JP6812224B2/ja active Active
-
2017
- 2017-12-05 TW TW106142478A patent/TWI766908B/zh active
- 2017-12-06 US US15/833,060 patent/US20180166259A1/en not_active Abandoned
- 2017-12-06 KR KR1020170166630A patent/KR102432446B1/ko active Active
- 2017-12-07 CN CN201711284031.4A patent/CN108183058B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6238513B1 (en) * | 1999-12-28 | 2001-05-29 | International Business Machines Corporation | Wafer lift assembly |
| CN102208322A (zh) * | 2010-03-30 | 2011-10-05 | 东京毅力科创株式会社 | 等离子体处理装置和半导体装置的制造方法 |
| CN102243977A (zh) * | 2010-05-12 | 2011-11-16 | 东京毅力科创株式会社 | 等离子体处理装置及半导体装置的制造方法 |
| CN104900571A (zh) * | 2014-03-07 | 2015-09-09 | 沈境植 | 基板升降销及基板处理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102432446B1 (ko) | 2022-08-16 |
| TWI766908B (zh) | 2022-06-11 |
| JP2018098239A (ja) | 2018-06-21 |
| KR20180065932A (ko) | 2018-06-18 |
| JP6812224B2 (ja) | 2021-01-13 |
| US20180166259A1 (en) | 2018-06-14 |
| TW201833985A (zh) | 2018-09-16 |
| CN108183058A (zh) | 2018-06-19 |
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