CN108155160A - The encapsulating structure and packaging method of fingerprint recognition chip - Google Patents
The encapsulating structure and packaging method of fingerprint recognition chip Download PDFInfo
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- CN108155160A CN108155160A CN201810084203.1A CN201810084203A CN108155160A CN 108155160 A CN108155160 A CN 108155160A CN 201810084203 A CN201810084203 A CN 201810084203A CN 108155160 A CN108155160 A CN 108155160A
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- layer
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- fingerprint recognition
- recognition chip
- wiring layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02379—Fan-out arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
Abstract
The present invention provides a kind of encapsulating structure and packaging method of fingerprint recognition chip, and encapsulating structure includes：First re-wiring layer includes the first face and the second opposite face；Metal lead wire is electrically connected at the first face of the first re-wiring layer；Fingerprint recognition chip, front have the first metal coupling, and the back side of fingerprint recognition chip is fixed on the first face of the first re-wiring layer；Encapsulating material layer is coated on fingerprint recognition chip；Second re-wiring layer, is formed in the surface of encapsulating material layer, and the second re-wiring layer is electrically connected with metal lead wire and the first metal coupling；And second metal coupling, it is formed in the second face of the first re-wiring layer.The present invention has the advantages that at low cost, thickness is small, yield is high using fan-out package fingerprint recognition chip.Pre-production of the present invention passes through the metal lead wire of encapsulating material layer, does not need to the silicon perforation technique of high cost, greatly reduces technology difficulty and cost.
Description
Technical field
The present invention relates to a kind of semiconductor package and packaging method, more particularly to a kind of envelope of fingerprint recognition chip
Assembling structure and packaging method.
Background technology
As the function of integrated circuit is increasingly stronger, performance and integrated level is higher and higher and novel integrated circuit goes out
Existing, encapsulation technology plays an increasingly important role in IC products, shared in the value of entire electronic system
Ratio it is increasing.Meanwhile as integrated circuit feature size reaches nanoscale, transistor to more high density, it is higher when
Clock frequency develops, and encapsulation also develops to more highdensity direction.
Since fan-out wafer grade encapsulates (fowlp) technology due to having many advantages, such as miniaturization, low cost and high integration, with
And with better performance and higher energy efficiency, fan-out wafer grade encapsulation (fowlp) technology become the movement of high request/
The important packaging method of the electronic equipments such as wireless network is one of encapsulation technology most with prospects at present.
Fingerprint identification technology is biometrics identification technology most ripe and cheap at present.For at present, fingerprint is known
Other technology is most widely used, not only it can be seen that the figure of fingerprint identification technology, has in the market in gate inhibition, attendance checking system
The applications of more fingerprint recognitions：As laptop, mobile phone, automobile, bank paying all can employing fingerprint identify technology.
A kind of packaging method of existing fingerprint recognition chip is as shown in Fig. 1 a~Fig. 1 c：
The first step as shown in Figure 1a, makes deep trouth, and be bonded on FPC plates 102, so in fingerprint recognition chip 101
Metal connecting line 103 is made by routing technique afterwards, realization fingerprint recognition chip 101 is electrically connected with FP C plates 102, wherein, FPC
It is the abbreviation of Flexible Printed Circuit, also known as flexible circuit board, with Distribution density is high, light-weight, thickness
The characteristics of thin.
Second step as shown in Figure 1 b, produces frame 104；
Third walks, and as illustrated in figure 1 c, sapphire cover board 105 is capped on the fingerprint recognition chip, to complete to encapsulate.
This method has the disadvantages that：Including FPC plates, fingerprint recognition chip and sapphire cover board three-decker, envelope
It is thicker to fill thickness, metal connecting line is easily broken caused by FPC soft boards are pullled etc., and whole yield is relatively low.
The packaging method of another fingerprint recognition chip is as shown in Fig. 2 a~Fig. 2 c：
The first step as shown in Figure 2 a, through hole electrode is formed by silicon perforation TSV technology in fingerprint recognition chip 101
106；
Sapphire cover board 105, fingerprint recognition chip 101 and FPC plates 102 as shown in Figure 2 b, are layered in one by second step
It rises, metal connecting line 103 is made by routing technique to connect the fingerprint recognition chip 101 and FPC plates 102；
Third walks, and as shown in Figure 2 c, produces frame 104.
This method has the disadvantages that：Need with sapphire cover board encapsulate, thickness is thicker, silicon perforation process costs compared with
Height, metal connecting line are easily broken, and the thinner thickness of fingerprint recognition chip caused by FPC soft boards are pullled etc., are susceptible to and split
Piece phenomenon, whole yield are relatively low.
Based on the above, a kind of encapsulation of the fingerprint recognition chip of low cost, low thickness and high encapsulation yield is provided
Structure and packaging method are necessary.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of encapsulation of fingerprint recognition chip
Structure and packaging method, for solving the problems such as fingerprint recognition package thickness is larger in the prior art, yield is relatively low.
In order to achieve the above objects and other related objects, the present invention provides a kind of encapsulating structure of fingerprint recognition chip, institute
Encapsulating structure is stated to include：First re-wiring layer includes the first face and the second opposite face；Metal lead wire is electrically connected at institute
State first face of the first re-wiring layer；Fingerprint recognition chip, the front of the fingerprint recognition chip have for electrical
The first metal coupling drawn, first face of first re-wiring layer is fixed at the back side of the fingerprint recognition chip
On；Encapsulating material layer, is coated on the fingerprint recognition chip, and the metal lead wire and first metal coupling are revealed in described
The surface of encapsulating material layer；Second re-wiring layer, is formed in the surface of the encapsulating material layer, the described second cloth again
Line layer is electrically connected with the metal lead wire and first metal coupling；And second metal coupling, it is formed in described first
Second face of re-wiring layer.
Preferably, first re-wiring layer includes：Patterned first medium layer is formed in the separating layer table
Face；Patterned metal wiring layer is formed in the patterned first medium layer surface；And patterned second medium
Layer, is formed in the patterned metal line layer surface；Wherein, the metal lead wire pass through the second dielectric layer with it is described
Metal wiring layer connects, and second metal coupling is connect across the first medium layer with the metal wiring layer.
Further, the first medium layer and the material of second dielectric layer include epoxy resin, silica gel, PI, PBO,
The combination of one or more of BCB, silica, phosphorosilicate glass, fluorine-containing glass, the material of the metal wiring layer include
The combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
Preferably, the material of the metal lead wire includes one kind in Au, Ag, Cu, Al.
Preferably, the back side of the fingerprint recognition chip is fixed on by DFA glue on first re-wiring layer, described
DFA glue includes the combination of hot-setting adhesive and light binding.
Preferably, the encapsulating material includes one kind in polyimides, silica gel and epoxy resin.
Preferably, the vertical corresponding region of second re-wiring layer and fingerprint recognition chip includes continuous medium
Layer, and not comprising metal layer, using the identification window as the fingerprint recognition chip.
Preferably, the thickness of second re-wiring layer is not more than 20 microns.
Preferably, second re-wiring layer includes：Patterned first medium layer, is formed in the encapsulating material layer
Surface；Patterned metal wiring layer is formed in the patterned first medium layer surface, the metal wiring layer and institute
It states metal lead wire and first metal coupling is electrically connected；And second dielectric layer, it is covered in the metal line layer surface.
The present invention also provides a kind of packaging method of fingerprint recognition chip, the packaging method includes step：1) one is provided
Support substrate forms separating layer in the substrate surface；2) in forming the first re-wiring layer in the separating layer, and pass through weldering
Wiring technology on first re-wiring layer in forming metal lead wire；3) a fingerprint recognition chip, the fingerprint recognition core are provided
The front of piece has the first metal coupling for electrically drawing, and the back side of the fingerprint recognition chip is fixed on described first
On re-wiring layer；4) the fingerprint recognition chip is encapsulated using encapsulating material layer, and causes the metal lead wire and described the
One metal coupling is revealed in the upper surface of the encapsulating material layer；5) second is formed again in the upper surface of the encapsulating material layer
Wiring layer, second re-wiring layer are electrically connected with the metal lead wire and first metal coupling；6) based on described
Detach support substrate described in layer separation and first re-wiring layer；And 7) in forming on second re-wiring layer
Two metal couplings.
Preferably, the support substrate includes glass substrate, metal substrate, Semiconductor substrate, polymer substrate and ceramics
One kind in substrate, the separating layer include one kind in adhesive tape and polymeric layer, and the polymeric layer uses spin coating work first
Skill is coated on the support substrate surface, then makes its curing molding using ultra-violet curing or heat curing process.
Preferably, step 2) making first re-wiring layer includes step：
2-1) first is formed in the separation layer surface using chemical vapor deposition method or physical gas-phase deposition to be situated between
Matter layer；
2-2) using chemical vapor deposition method, evaporation process, sputtering technology, electroplating technology or chemical plating process in described
Dielectric layer surface forms metal layer, and the metal layer is performed etching to form patterned metal wiring layer；And
2-3) using chemical vapor deposition method or physical gas-phase deposition in covering second on the metal wiring layer
Dielectric layer, and processing is patterned to the second dielectric layer, appear the metal wiring layer of part, with realization and subsequently
The electric connection of the metal lead wire of making.
Further, the first medium layer and the material of second dielectric layer include epoxy resin, silica gel, PI, PBO,
The combination of one or more of BCB, silica, phosphorosilicate glass, fluorine-containing glass, the material of the metal wiring layer include
The combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
Preferably, in step 2), the bonding wire craft includes hot pressing bonding wire craft, supersonic welding Wiring technology and hot pressing ultrasound
One kind in wave soldering Wiring technology, the material of the metal lead wire include one kind in Au, Ag, Cu, Al.
Preferably, in step 3), the back side of the fingerprint recognition chip is fixed on by the described first cloth again using DFA glue
On line layer, the DFA glue includes the combination of hot-setting adhesive and light binding.
Preferably, compression forming, transfer modling are included using the method that encapsulating material layer encapsulates the fingerprint recognition chip
One kind in molding, fluid-tight molding, vacuum lamination and spin coating, the encapsulating material include polyimides, silica gel and asphalt mixtures modified by epoxy resin
One kind in fat.
Preferably, the vertical corresponding region of second re-wiring layer and fingerprint recognition chip includes continuous medium
Layer, and not comprising metal layer, using the identification window as the fingerprint recognition chip.
Preferably, the thickness of second re-wiring layer is not more than 20 microns.
Preferably, step 5) making second re-wiring layer includes step：5-1) using chemical vapor deposition method
Or physical gas-phase deposition forms patterned first medium layer in the upper surface of the encapsulating material layer；5-2) using chemistry
Gas-phase deposition, evaporation process, sputtering technology, electroplating technology or chemical plating process are in the patterned dielectric layer surface shape
It performs etching to form patterned metal wiring layer into metal layer, and to the metal layer, the metal wiring layer and the gold
Belong to lead and first metal coupling is electrically connected；And 5-3) in forming second dielectric layer on the metal wiring layer.
Preferably, first metal coupling includes and is connected to the conductive column of the fingerprint recognition chip and positioned at described
The brazing metal on conductive column surface；The material of second metal coupling includes one or more being formed in lead, tin and silver
Alloy.
As described above, the encapsulating structure and packaging method of the fingerprint recognition chip of the present invention, have the advantages that：
1) present invention is using fan-out package (Fan out) fingerprint recognition chip, compared to existing other fingerprint recognitions
For chip package, have the advantages that at low cost, thickness is small, yield is high；
2) pre-production of the present invention passes through the metal lead wire of encapsulating material layer, does not need to the silicon perforation technique of high cost
(TSV) it just can realize the encapsulation of fingerprint recognition chip, greatly reduce technology difficulty and cost；
3) present invention does not need in addition increase sapphire directly using cover board of the re-wiring layer as fingerprint recognition chip
Cover board greatly reduces the thickness and cost of encapsulation；
4) for the present invention using encapsulation (Fan out) technique is fanned out to, the electricity extraction of chip does not need to traditional FPC plates, can be with
The thickness of encapsulation and the stability of electrical deriving structure are reduced, improves encapsulation yield；
5) present invention process is simple, creatively using packaging technology encapsulation fingerprint recognition chip is fanned out to, has good
Conformability is with a wide range of applications in technical field of semiconductor encapsulation.
Description of the drawings
What each step of packaging method that Fig. 1 a~Fig. 1 c are shown as a kind of fingerprint recognition chip of the prior art was presented
Structure diagram.
Each step of packaging method that Fig. 2 a~Fig. 2 c are shown as another fingerprint recognition chip of the prior art is presented
Structure diagram.
Fig. 3~Figure 12 is shown as the structural representation that each step of packaging method of the fingerprint recognition chip of the present invention is presented
Figure.
Component label instructions
201 support substrates
202 separating layers
203 first medium layers
204 first metal wiring layers
205 second dielectric layer
206 metal lead wires
207 DFA glue
208 fingerprint recognition chips
209 identification regions
210 conductive columns
211 brazing metals
212 encapsulating material layers
213 third dielectric layers
214 second metal wiring layers
215 the 4th dielectric layers
216 second metal couplings
217 identification windows
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig. 3~Figure 12.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in illustrating then
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 3~Figure 12, the present embodiment provides a kind of packaging method of fingerprint recognition chip 208, the encapsulation sides
Method includes step：
As shown in figure 3, carrying out step 1) first, a support substrate 201 is provided, separating layer is formed in the substrate surface
202。
As an example, the support substrate 201 include glass substrate, metal substrate, Semiconductor substrate, polymer substrate and
One kind in ceramic substrate.In the present embodiment, the support substrate 201 is selected as glass substrate, the glass substrate cost
It is relatively low, separating layer 202 is easily formed on its surface, and the difficulty of subsequent stripping technology can be reduced.
As an example, the separating layer 202 includes one kind in adhesive tape and polymeric layer, the polymeric layer uses first
Spin coating proceeding is coated on 201 surface of support substrate, then makes its curing molding using ultra-violet curing or heat curing process.
In the present embodiment, it is heat-curable glue that the separating layer 202, which is selected, and being formed in the support by spin coating proceeding serves as a contrast
After on bottom 201201, its curing molding is made by heat curing process.Heat-curable glue performance is stablized, and surface is more smooth, after being conducive to
The making of continuous re-wiring layer, also, in subsequent stripping technology, the difficulty of stripping is relatively low, can have been obtained after stripping
Re-wiring layer whole and of good performance.
As shown in Fig. 4~Fig. 5, step 2) is then carried out, in forming the first re-wiring layer in the separating layer 202, and
By bonding wire craft in formation metal lead wire 206 on first re-wiring layer.
Step 2) makes first re-wiring layer and includes step：
Step 2-1), using chemical vapor deposition method or physical gas-phase deposition in the 202 surface shape of separating layer
Into first medium layer 203.
As an example, the material of the first medium layer 203 include epoxy resin, silica gel, PI, PBO, BCB, silica,
The combination of one or more of phosphorosilicate glass, fluorine-containing glass.In the present embodiment, the material of the first medium layer 203
For PI.
Step 2-2), using chemical vapor deposition method, evaporation process, sputtering technology, electroplating technology or chemical plating process
Metal layer is formed, and the metal layer is performed etching to form patterned first metal wiring layer in the dielectric layer surface
204。
As an example, the material of first metal wiring layer 204 includes copper, aluminium, nickel, gold, silver, one kind in titanium or two
Kind combination of the above.In the present embodiment, the material selection of first metal wiring layer 204 is copper.
Step 2-3), using chemical vapor deposition method or physical gas-phase deposition in first metal wiring layer
Second dielectric layer 205 is covered on 204, and processing is patterned to the second dielectric layer 205, appears described the first of part
Metal wiring layer 204, to realize the electric connection of metal lead wire 206 with subsequently making, specifically, first gold medal appeared
Belong to wiring layer 204 and be located at the peripheral side of fingerprint recognition chip 208 subsequently made.
As an example, the material of the second dielectric layer 205 include epoxy resin, silica gel, PI, PBO, BCB, silica,
The combination of one or more of phosphorosilicate glass, fluorine-containing glass.In the present embodiment, the material of the second dielectric layer 205
It selects as PI.
The bonding wire craft includes one in hot pressing bonding wire craft, supersonic welding Wiring technology and thermosonic bonding wire craft
Kind, the material of the metal lead wire 206 includes one kind in Au, Ag, Cu, Al.In the present embodiment, the metal lead wire 206
Material selection be Au.
As shown in Fig. 6~Fig. 7, step 3) is then carried out, a fingerprint recognition chip 208, the fingerprint recognition chip are provided
208 front has the first metal coupling for electrically drawing, and the back side of the fingerprint recognition chip 208 is fixed on described
On first re-wiring layer.
The fingerprint recognition chip 208 has identification region 209, and 209 peripheral side of identification region has electrical connection area
Domain, first metal coupling are connected to the electric coupling area, and the identification region 209 and the electric coupling area are located at institute
State the front of fingerprint recognition chip 208.As an example, first metal coupling, which includes, is connected to the fingerprint recognition chip
208 conductive column 210 and the brazing metal 211 positioned at 210 surface of conductive column.The material of the conductive column 210 includes
Cu, the material of the brazing metal 211 include Sn.
The back side of the fingerprint recognition chip 208 is fixed on first re-wiring layer using DFA glue 207, institute
State the combination that DFA glue 207 includes hot-setting adhesive and light binding.
As shown in figure 8, then carrying out step 4), the fingerprint recognition chip 208 is encapsulated using encapsulating material layer 212, and
So that the metal lead wire 206 and first metal coupling are revealed in the upper surface of the encapsulating material layer 212.
Using encapsulating material layer 212 encapsulate the fingerprint recognition chip 208 method include compression forming, transfer modling into
One kind in type, fluid-tight molding, vacuum lamination and spin coating, the encapsulating material include polyimides, silica gel and epoxy resin
In one kind.
As shown in figure 9, then carrying out step 5), the second rewiring is formed in the upper surface of the encapsulating material layer 212
Layer, second re-wiring layer are electrically connected with the metal lead wire 206 and first metal coupling.
Step 5) makes second re-wiring layer and includes step：
Step 5-1), using chemical vapor deposition method or physical gas-phase deposition in the encapsulating material layer 212
Upper surface forms patterned third dielectric layer 213.
As an example, the material of the third dielectric layer 213 include epoxy resin, silica gel, PI, PBO, BCB, silica,
The combination of one or more of phosphorosilicate glass, fluorine-containing glass.In the present embodiment, the material of the third dielectric layer 213
It selects as PI.
Step 5-2), using chemical vapor deposition method, evaporation process, sputtering technology, electroplating technology or chemical plating process
Metal layer is formed, and the metal layer is performed etching to form patterned second metal in the patterned dielectric layer surface
Wiring layer 214, second metal wiring layer 214 are electrically connected with the metal lead wire 206 and first metal coupling.
As an example, the material of second metal wiring layer 214 includes copper, aluminium, nickel, gold, silver, one kind in titanium or two
Kind combination of the above.In the present embodiment, the material selection of second metal wiring layer 214 is copper.
Step 5-3), in the 4th dielectric layer 215 of formation on second metal wiring layer 214.
As an example, the material of the 4th dielectric layer 215 include epoxy resin, silica gel, PI, PBO, BCB, silica,
The combination of one or more of phosphorosilicate glass, fluorine-containing glass.In the present embodiment, the material of the 4th dielectric layer 215
It selects as PI.
The vertical corresponding region of second re-wiring layer and fingerprint recognition chip 208 includes continuous dielectric layer,
And not comprising metal layer, using the identification window 217 as the fingerprint recognition chip 208.For capacitive fingerprint recognition core
Piece 208 and ultrasonic type, especially for the fingerprint recognition chip 208 of optical profile type, the identification window 217 can obtain well
Recognition effect.
Preferably, the thickness of second re-wiring layer is not more than 20 microns.For example, second re-wiring layer
Thickness can be 10~15 microns, to ensure its protecting effect to the fingerprint recognition chip 208, and further improve institute
State the recognition effect of identification window 217.
As shown in Figure 10, then carry out step 6), based on the separating layer 202 detach the support substrate 201 with it is described
First re-wiring layer.
As an example, the attribute according to the separating layer 202, may be used such as mechanical stripping, laser lift-off, chemical stripping
The methods of (such as wet etching), detaches the support substrate 201 and first re-wiring layer.
As shown in Figure 11~Figure 12, finally carry out step 7), on second re-wiring layer formed lower metal layer with
And the second metal coupling 216 on the lower metal layer.
The material of second metal coupling 216 includes one or more formed alloys in lead, tin and silver.
As shown in figure 12, the present embodiment also provides a kind of encapsulating structure of fingerprint recognition chip 208, the encapsulating structure packet
It includes：First re-wiring layer includes the first face and the second opposite face；Metal lead wire 206 is electrically connected at described first again
First face of wiring layer；Fingerprint recognition chip 208, the front of the fingerprint recognition chip 208 have electrically to draw
The first metal coupling, first face of first re-wiring layer is fixed at the back side of the fingerprint recognition chip 208
On；Encapsulating material layer 212 is coated on the fingerprint recognition chip 208, the metal lead wire 206 and first metal coupling
It is revealed in the surface of the encapsulating material layer 212；Second re-wiring layer is formed in the table of the encapsulating material layer 212
Face, second re-wiring layer are electrically connected with the metal lead wire 206 and first metal coupling；And second metal
Convex block 216 is formed in the second face of first re-wiring layer.
As an example, first re-wiring layer includes：Patterned first medium layer 203, is formed in the separation
202 surface of layer；Patterned first metal wiring layer 204 is formed in patterned 203 surface of first medium layer；And
Patterned second dielectric layer 205 is formed in patterned first metal wiring layer, 204 surface；Wherein, the metal draws
Line 206 is connect across the second dielectric layer 205 with the metal wiring layer, and second metal coupling 216 passes through described the
One dielectric layer 203 is connect with the metal wiring layer.Further, the first medium layer 203 and the material of second dielectric layer 205
Material includes one or more of epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, fluorine-containing glass group
It closes, the material of the metal wiring layer includes the combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
As an example, the material of the metal lead wire 206 includes one kind in Au, Ag, Cu, Al.
As an example, first rewiring is fixed in the back side of the fingerprint recognition chip 208 by DFA glue 207
On layer, the DFA glue 207 includes the combination of hot-setting adhesive and light binding.
As an example, the encapsulating material includes one kind in polyimides, silica gel and epoxy resin.
As an example, the vertical corresponding region of second re-wiring layer and fingerprint recognition chip 208 includes continuously
Dielectric layer, and not comprising metal layer, using the identification window 217 as the fingerprint recognition chip 208.
As an example, the thickness of second re-wiring layer is not more than 20 microns.
As an example, second re-wiring layer includes：Patterned third dielectric layer 213, is formed in the encapsulation
The surface of material layer 212；Patterned second metal wiring layer 214 is formed in patterned 213 table of third dielectric layer
Face, second metal wiring layer 214 are electrically connected with the metal lead wire 206 and first metal coupling；And the 4th
Dielectric layer 215 is covered in 214 surface of the second metal wiring layer.
As described above, the encapsulating structure and packaging method of the fingerprint recognition chip 208 of the present invention, have below beneficial to effect
Fruit：
1) present invention is known using fan-out package (Fan out) fingerprint recognition chip 208 compared to existing other fingerprints
For the other encapsulation of chip 208, have the advantages that at low cost, thickness is small, yield is high；
2) pre-production of the present invention passes through the metal lead wire 206 of encapsulating material layer 212, does not need to the silicon perforation work of high cost
Skill (TSV) just can realize the encapsulation of fingerprint recognition chip 208, greatly reduce technology difficulty and cost；
3) present invention does not need in addition increase blue directly using cover board of the re-wiring layer as fingerprint recognition chip 208
Jewel cover board greatly reduces the thickness and cost of encapsulation；
4) for the present invention using encapsulation (Fan out) technique is fanned out to, the electricity extraction of chip does not need to traditional FPC plates, can be with
The thickness of encapsulation and the stability of electrical deriving structure are reduced, improves encapsulation yield；
5) present invention process is simple, creatively using packaging technology encapsulation fingerprint recognition chip 208 is fanned out to, has good
Conformability, be with a wide range of applications in technical field of semiconductor encapsulation.
So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (20)
1. a kind of encapsulating structure of fingerprint recognition chip, which is characterized in that the encapsulating structure includes：
First re-wiring layer includes the first face and the second opposite face；
Metal lead wire is electrically connected at first face of first re-wiring layer；
Fingerprint recognition chip, the front of the fingerprint recognition chip have the first metal coupling for electrically drawing, the finger
The back side of line identification chip is fixed on first face of first re-wiring layer；
Encapsulating material layer, is coated on the fingerprint recognition chip, and the metal lead wire and first metal coupling are revealed in institute
State the surface of encapsulating material layer；
Second re-wiring layer is formed in the surface of the encapsulating material layer, second re-wiring layer and the gold
Belong to lead and first metal coupling is electrically connected；And
Second metal coupling is formed in the second face of first re-wiring layer.
2. the encapsulating structure of fingerprint recognition chip according to claim 1, which is characterized in that first re-wiring layer
Including：
Patterned first medium layer is formed in the separation layer surface；
Patterned metal wiring layer is formed in the patterned first medium layer surface；And
Patterned second dielectric layer is formed in the patterned metal line layer surface；
Wherein, the metal lead wire is connect across the second dielectric layer with the metal wiring layer, second metal coupling
It is connect across the first medium layer with the metal wiring layer.
3. the encapsulating structure of fingerprint recognition chip according to claim 2, it is characterised in that：The first medium layer and
The material of second medium layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, one kind in fluorine-containing glass or
Two or more combinations, the material of the metal wiring layer include the combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
4. the encapsulating structure of fingerprint recognition chip according to claim 1, it is characterised in that：The material of the metal lead wire
Including one kind in Au, Ag, Cu, Al.
5. the encapsulating structure of fingerprint recognition chip according to claim 1, it is characterised in that：The fingerprint recognition chip
The back side is fixed on by DFA glue on first re-wiring layer, and the DFA glue includes the combination of hot-setting adhesive and light binding.
6. the encapsulating structure of fingerprint recognition chip according to claim 1, it is characterised in that：The encapsulating material includes poly-
One kind in acid imide, silica gel and epoxy resin.
7. the encapsulating structure of fingerprint recognition chip according to claim 1, it is characterised in that：Second re-wiring layer
Include continuous dielectric layer with the vertical corresponding region of fingerprint recognition chip, and not comprising metal layer, using as the fingerprint
The identification window of identification chip.
8. the encapsulating structure of fingerprint recognition chip according to claim 1, it is characterised in that：Second re-wiring layer
Thickness be not more than 20 microns.
9. the encapsulating structure of fingerprint recognition chip according to claim 1, it is characterised in that：Second re-wiring layer
Including：
Patterned first medium layer is formed in the surface of the encapsulating material layer；
Patterned metal wiring layer, is formed in the patterned first medium layer surface, the metal wiring layer with it is described
Metal lead wire and first metal coupling are electrically connected；And
Second dielectric layer is covered in the metal line layer surface.
10. a kind of packaging method of fingerprint recognition chip, which is characterized in that the packaging method includes step：
1) support substrate is provided, separating layer is formed in the substrate surface；
2) in forming the first re-wiring layer in the separating layer, and pass through bonding wire craft in shape on first re-wiring layer
Into metal lead wire；
3) a fingerprint recognition chip is provided, the front of the fingerprint recognition chip is convex with the first metal for being used to electrically draw
The back side of the fingerprint recognition chip is fixed on first re-wiring layer by block；
4) the fingerprint recognition chip is encapsulated using encapsulating material layer, and causes the metal lead wire and first metal coupling
It is revealed in the upper surface of the encapsulating material layer；
5) the second re-wiring layer, second re-wiring layer and the metal are formed in the upper surface of the encapsulating material layer
Lead and first metal coupling are electrically connected；
6) based on support substrate and first re-wiring layer described in the separation layer separation；And
7) in forming the second metal coupling on second re-wiring layer.
11. the packaging method of fingerprint recognition chip according to claim 1, it is characterised in that：The support substrate includes
One kind in glass substrate, metal substrate, Semiconductor substrate, polymer substrate and ceramic substrate, the separating layer include adhesive tape
And one kind in polymeric layer, the polymeric layer are coated on the support substrate surface using spin coating proceeding first, then adopt
Make its curing molding with ultra-violet curing or heat curing process.
12. the packaging method of fingerprint recognition chip according to claim 10, it is characterised in that：Step 2) makes described the
One re-wiring layer includes step：
First medium layer 2-1) is formed in the separation layer surface using chemical vapor deposition method or physical gas-phase deposition；
2-2) using chemical vapor deposition method, evaporation process, sputtering technology, electroplating technology or chemical plating process in the medium
Layer surface forms metal layer, and the metal layer is performed etching to form patterned metal wiring layer；And
2-3) using chemical vapor deposition method or physical gas-phase deposition in covering second medium on the metal wiring layer
Layer, and processing is patterned to the second dielectric layer, appear the metal wiring layer of part, made with realizing with follow-up
Metal lead wire electric connection.
13. the packaging method of fingerprint recognition chip according to claim 12, it is characterised in that：The first medium layer and
The material of second dielectric layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, one kind in fluorine-containing glass
Or two or more combinations, the material of the metal wiring layer include one or more of copper, aluminium, nickel, gold, silver, titanium group
It closes.
14. the packaging method of fingerprint recognition chip according to claim 10, it is characterised in that：In step 2), the weldering
Wiring technology includes one kind in hot pressing bonding wire craft, supersonic welding Wiring technology and thermosonic bonding wire craft, and the metal draws
The material of line includes one kind in Au, Ag, Cu, Al.
15. the packaging method of fingerprint recognition chip according to claim 10, it is characterised in that：In step 3), using DFA
The back side of the fingerprint recognition chip is fixed on first re-wiring layer by glue, and the DFA glue includes hot-setting adhesive and light
The combination of solid glue.
16. the packaging method of fingerprint recognition chip according to claim 10, it is characterised in that：It is sealed using encapsulating material layer
The method for filling the fingerprint recognition chip is included in compression forming, Transfer molding, fluid-tight molding, vacuum lamination and spin coating
One kind, the encapsulating material include one kind in polyimides, silica gel and epoxy resin.
17. the packaging method of fingerprint recognition chip according to claim 10, it is characterised in that：Second rewiring
Layer includes continuous dielectric layer with the vertical corresponding region of fingerprint recognition chip, and does not include metal layer, using as the finger
The identification window of line identification chip.
18. the packaging method of fingerprint recognition chip according to claim 10, it is characterised in that：Second rewiring
The thickness of layer is not more than 20 microns.
19. the packaging method of fingerprint recognition chip according to claim 10, it is characterised in that：Step 5) makes described the
Two re-wiring layers include step：
It 5-1) is formed and schemed in the upper surface of the encapsulating material layer using chemical vapor deposition method or physical gas-phase deposition
The first medium layer of shape；
5-2) using chemical vapor deposition method, evaporation process, sputtering technology, electroplating technology or chemical plating process in the figure
The dielectric layer surface of change forms metal layer, and the metal layer is performed etching to form patterned metal wiring layer, the gold
Belong to wiring layer to be electrically connected with the metal lead wire and first metal coupling；And
5-3) in forming second dielectric layer on the metal wiring layer.
20. the packaging method of fingerprint recognition chip according to claim 10, it is characterised in that：First metal coupling
Include the conductive column for being connected to the fingerprint recognition chip and the brazing metal positioned at the conductive column surface；Second gold medal
The material for belonging to convex block includes one or more formed alloys in lead, tin and silver.
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