CN208336188U - The encapsulating structure of antenna - Google Patents

The encapsulating structure of antenna Download PDF

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Publication number
CN208336188U
CN208336188U CN201820359524.3U CN201820359524U CN208336188U CN 208336188 U CN208336188 U CN 208336188U CN 201820359524 U CN201820359524 U CN 201820359524U CN 208336188 U CN208336188 U CN 208336188U
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CN
China
Prior art keywords
antenna
layer
metal
wiring layer
encapsulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
CN201820359524.3U
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Chinese (zh)
Inventor
陈彦亨
林正忠
吴政达
林章申
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SJ Semiconductor Jiangyin Corp
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SJ Semiconductor Jiangyin Corp
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Publication date
Application filed by SJ Semiconductor Jiangyin Corp filed Critical SJ Semiconductor Jiangyin Corp
Priority to CN201820359524.3U priority Critical patent/CN208336188U/en
Application granted granted Critical
Publication of CN208336188U publication Critical patent/CN208336188U/en
Priority to US16/354,464 priority patent/US11228087B2/en
Priority to US17/545,650 priority patent/US11699840B2/en
Withdrawn - After Issue legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6661High-frequency adaptations for passive devices
    • H01L2223/6677High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

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  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The utility model provides a kind of encapsulating structure of antenna, encapsulating structure includes antenna circuit chip, the first encapsulated layer, the first re-wiring layer, antenna structure, the second metal connecting column, third encapsulated layer, the second antenna metal layer and the second metal coupling, and the antenna circuit chip, antenna structure and the second antenna metal layer connect pole interconnection by re-wiring layer and metal.The method that the antenna packages structure of the utility model uses the interconnection of multilayer re-wiring layer, the integration of stacked antenna metal layer can be achieved, and the direct perpendicular interconnection between mutiple antennas encapsulating structure may be implemented, to greatly improve the efficiency and performance of antenna, and the antenna packages structure of the utility model and method conformability are higher;The utility model uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that the encapsulating structure of antenna integrated level with higher and better encapsulation performance, are with a wide range of applications in field of semiconductor package.

Description

The encapsulating structure of antenna
Technical field
The utility model belongs to field of semiconductor package, more particularly to the encapsulating structure and packaging method of a kind of antenna.
Background technique
Due to the progress of science and technology, various high-tech electronic products are developed to facilitate people's lives, including each Kind electronic device, such as: notebook computer, mobile phone, tablet computer (PAD).
With universal and people's demand the increase of these high-tech electronic products, in addition to institute in these high-tech products Outside the various functions of configuration and application increase considerably, wireless telecommunications are increased especially for the mobile demand of cooperation people Function.Then, people can be installed on any place or be appointed by these high-tech electronics with wireless communication function When quarter uses these high-tech electronic products.To significantly increase the flexibility that these high-tech electronic products use With convenience, therefore, people need not be again limited in a fixed region, break the boundary of use scope, so that The application of these electronic products veritably facilitates people's lives.
In general, existing antenna structure generally includes dipole antenna (Dipole Antenna), unipole antenna (Monopole Antenna), plate aerial (Patch Antenna), inverted-F antenna (Planar Inverted-F Antenna), indentation antenna (Meander Line Antenna), inversed l-shaped antenna (Inverted-L Antenna), follow Loop antenna (Loop Antenna), helical antenna (Spiral Antenna) and spring antenna (Spring Antenna) etc.. The known practice is that antenna is directly made in the surface of circuit board, and this practice can allow antenna to occupy additional circuit plate face Product, conformability are poor.For various electronic devices, large volume of electronic device is indicated using biggish circuit board. But these electronic device designs and the main purpose of development therefore, how are reduced to make user easy to carry The area of circuit board shared by antenna improves the integration performance of antenna packages structure, will be asking of overcoming needed for these electronic devices Topic.
In addition, existing antenna packages are mostly single layer structure, antenna efficiency is lower, has been insufficient for antenna performance Increasing demand.
Based on the above, a kind of encapsulating structure and packaging method with high conformability and efficient antenna is provided It is necessary.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of encapsulating structures of antenna And packaging method, for solving the problems, such as that antenna packages conformability in the prior art is lower and the efficiency of antenna is lower.
In order to achieve the above objects and other related objects, the utility model provides a kind of encapsulating structure of antenna, comprising: day Line circuit chip;First encapsulated layer coats the antenna chip, and including the first face and the second opposite face, first face is aobvious Reveal the front of the antenna chip;First re-wiring layer is formed in positive and described first envelope of the antenna circuit chip The first face of layer is filled, first re-wiring layer includes the first face connecting with first encapsulated layer and opposite second Face;Antenna structure, including the second encapsulated layer, first antenna metal layer, the second re-wiring layer and the first metal coupling, described One antenna metal layer is located at the first face of second encapsulated layer, and second re-wiring layer is located at second encapsulated layer Second face, the first antenna metal layer and second re-wiring layer are by the first metal for passing through second encapsulated layer Connecting column is electrically connected, and first metal coupling is formed on second re-wiring layer, first metal coupling with The first re-wiring layer engagement;Second metal connecting column is formed on the second face of first re-wiring layer, described The height of second metal connecting column is not less than the top surface of the antenna structure;Third encapsulated layer coats the antenna structure, and institute The top surface for stating the second metal connecting column is exposed to the third encapsulated layer;Second antenna metal layer is formed in the third encapsulation Layer surface, the second antenna metal layer are connect with the second metal connecting column;And second metal coupling, it is formed in described In the through-hole of first encapsulated layer, and it is electrically connected the first face of first re-wiring layer.
Preferably, the material of first encapsulated layer includes one of polyimides, silica gel and epoxy resin;It is described The material of second encapsulated layer includes one of polyimides, silica gel and epoxy resin, the material packet of the third encapsulated layer Include one of polyimides, silica gel and epoxy resin.
Preferably, first re-wiring layer includes patterned dielectric layer and patterned metal wiring layer.
Preferably, second re-wiring layer includes patterned first medium layer, the patterned gold stacked gradually Belong to wiring layer and patterned second dielectric layer.
Preferably, the material of the dielectric layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, The combination of one or more of fluorine-containing glass, the material of the metal wiring layer include copper, aluminium, nickel, gold, silver, in titanium One or more combination.
Preferably, the material of the first metal connecting column and the second metal connecting column includes in Au, Ag, Cu, Al One kind.
Preferably, first metal coupling and the second metal coupling include tin solder, silver solder and gold-tin eutectic solder One of.
Preferably, the both ends width of first re-wiring layer is greater than the width of the antenna structure, second gold medal On the second face for belonging to the first re-wiring layer that connecting column is distributed in the antenna structure periphery.
Preferably, the second antenna metal layer has a window in the vertical region of the first antenna metal layer, with The second antenna metal layer is avoided to block the first antenna metal layer.
The utility model also provides a kind of packaging method of antenna, and the packaging method includes: 1) to provide a support substrate, In forming separating layer in the support substrate;2) an antenna circuit chip is provided, by the antenna circuit adhesive die attachment in described Separating layer, the antenna circuit chip just facing towards the separating layer;3) antenna circuit is encapsulated using the first encapsulated layer Chip;4) first encapsulated layer and the support substrate are removed based on the separating layer, exposes the antenna circuit chip Front;5) the first re-wiring layer is formed in the positive and described first encapsulation layer surface of the antenna circuit chip, described the One re-wiring layer includes the first face connecting with first encapsulated layer and the second opposite face;6) one day knot is provided Structure, the antenna structure include the second encapsulated layer, first antenna metal layer, the second re-wiring layer and the first metal coupling, institute The first face that first antenna metal layer is located at second encapsulated layer is stated, second re-wiring layer is located at second encapsulation Second face of layer, the first antenna metal layer and second re-wiring layer are by across the first of second encapsulated layer Metal connecting column is electrically connected, and first metal coupling is formed on second re-wiring layer;7) described first is engaged Second face of re-wiring layer and first metal coupling;8) in forming second on the second face of first re-wiring layer Metal connecting column, the height of the second metal connecting column are not less than the top surface of the antenna structure;9) third encapsulated layer is used The antenna structure is encapsulated, and planarization process is carried out to third encapsulation layer surface, and second metal is connected The top surface of column is exposed to the third encapsulated layer;10) the second antenna metal layer is formed in third encapsulation layer surface, described the Two antenna metal layers are connect with the second metal connecting column;And it 11) is formed in first encapsulated layer and appears described the The through-hole of one re-wiring layer, and the second metal coupling is formed in the through-hole, to realize first re-wiring layer Electrically draw.
Preferably, the support substrate includes glass substrate, metal substrate, semiconductor substrate, polymer substrate and ceramics One of substrate;The separating layer includes one of adhesive tape and polymeric layer, and the polymeric layer uses spin coating work first Skill is coated on the support substrate surface, then makes its curing molding using ultra-violet curing or heat curing process.
Preferably, step 3) includes compression forming, transmitting mould using the method that the first encapsulated layer encapsulates the antenna chip It is moulded into one of type, fluid-tight molding, vacuum lamination and spin coating, the material of first encapsulated layer includes polyimides, silica gel And one of epoxy resin;The method that step 9) encapsulates the antenna structure using third encapsulated layer include compression forming, One of Transfer molding, fluid-tight molding, vacuum lamination and spin coating, the material of the third encapsulated layer include polyamides Asia One of amine, silica gel and epoxy resin.
Preferably, the method that step 4) removes first encapsulated layer and the support substrate based on the separating layer includes One of mechanical stripping and chemical stripping.
Preferably, step 5) makes first re-wiring layer comprising steps of 5-1) use chemical vapor deposition process Or physical gas-phase deposition forms dielectric layer in the positive and described first encapsulation layer surface of the antenna circuit chip, and right The dielectric layer performs etching to form patterned dielectric layer;5-2) using chemical vapor deposition process, evaporation process, sputtering work Skill, electroplating technology or chemical plating process form metal layer in the patterned media layer surface, and carve to the metal layer Erosion forms patterned metal wiring layer.
Further, the material of the dielectric layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorus silicon glass Glass, the combination of one or more of fluorine-containing glass, the material of the metal wiring layer include copper, aluminium, nickel, gold, silver, in titanium One or more kinds of combinations.
Preferably, it includes: 6-1 that step 6), which provides the antenna structure) a support substrate is provided, on the support substrate Form peeling layer;6-2) in formation first antenna metal layer on the peeling layer, and formed on the first antenna metal layer First metal connecting column;The first antenna metal layer and the first metal connecting column 6-3) are encapsulated using the second encapsulated layer, And planarization process is carried out to second encapsulated layer, to appear the first metal connecting column;6-4) in second encapsulation The second re-wiring layer is formed on layer, and in forming the first metal coupling on second re-wiring layer;6-5) based on described Peeling layer separates the support substrate and second encapsulated layer, to appear the first antenna metal layer;And 6-6) cutting To form independent antenna structure.
Preferably, the second metal connecting column is made using bonding wire craft, the bonding wire craft includes hot pressing bonding wire work One of skill, supersonic welding Wiring technology and thermosonic bonding wire craft;The material of the second metal connecting column include Au, One of Ag, Cu, Al.
Preferably, first metal coupling and the second metal coupling include tin solder, silver solder and gold-tin eutectic solder One of.
Preferably, the both ends width of first re-wiring layer is greater than the width of the antenna structure, second gold medal Category connecting column is distributed in the upper of the first re-wiring layer of the antenna structure periphery.
Preferably, the second antenna metal layer has a window in the vertical region of the first antenna metal layer, with The second antenna metal layer is avoided to block the first antenna metal layer.
As described above, the encapsulating structure and packaging method of the antenna of the utility model, have the advantages that
The antenna packages structure of the utility model is using the method for multilayer re-wiring layer interconnection, it can be achieved that stacked antenna is golden Belong to the integration of layer, and the direct perpendicular interconnection between mutiple antennas encapsulating structure may be implemented, to greatly improve the effect of antenna Rate and performance, and the antenna packages structure of the utility model and method conformability are higher;
The utility model uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that antenna Encapsulating structure integrated level with higher and better encapsulation performance, before field of semiconductor package has a wide range of applications Scape.
Detailed description of the invention
FIG. 1 to FIG. 20 is shown as the structural schematic diagram that each step of packaging method of the antenna of the utility model is presented, In, Figure 20 is shown as the structural schematic diagram of the encapsulating structure of the antenna of the utility model.
Component label instructions
101 support substrates
102 separating layers
103 antenna circuit chips
104 first encapsulated layers
105 first re-wiring layers
106 second metal connecting columns
107 third encapsulated layers
108 second antenna metal layers
109 second metal couplings
110 windows
201 support substrates
202 peeling layers
203 first antenna metal layers
204 first metal connecting columns
205 second encapsulated layers
206 second re-wiring layers
207 first metal couplings
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to FIG. 1 to FIG. 20.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way The basic conception of utility model is only shown with related component in the utility model rather than when according to actual implementation in diagram then Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind Become, and its assembly layout kenel may also be increasingly complex.
As shown in FIG. 1 to FIG. 20, the present embodiment provides a kind of packaging method of antenna, the packaging method includes:
As shown in Figure 1, carrying out step 1) first, a support substrate 101 is provided, is divided in being formed in the support substrate 101 Absciss layer 102.
As an example, the support substrate 101 include glass substrate, metal substrate, semiconductor substrate, polymer substrate and One of ceramic substrate.In the present embodiment, it is glass substrate, the glass substrate cost that the support substrate 101, which is selected, It is lower, it is easy to be formed on its surface separating layer 102, and the difficulty of subsequent stripping technology can be reduced.
As an example, the separating layer 102 includes one of adhesive tape and polymeric layer, the polymeric layer uses first Spin coating proceeding is coated on 101 surface of support substrate, then makes its curing molding using ultra-violet curing or heat curing process.
In the present embodiment, it is heat-curable glue that the separating layer 102, which is selected, is formed in the branch support group by spin coating proceeding After on bottom 101, its curing molding is made by heat curing process.Heat-curable glue performance is stablized, and surface is more smooth, is conducive to subsequent The production of re-wiring layer, also, in subsequent stripping technology, the difficulty of removing is lower.
As shown in Fig. 2, then carrying out step 2), an antenna circuit chip 103 is provided, by the antenna circuit chip 103 Be adhered to the separating layer 102, the antenna circuit chip 103 just facing towards the separating layer 102.
As shown in figure 3, then carrying out step 3), the antenna circuit chip 103, institute are encapsulated using the first encapsulated layer 104 The thickness for stating the first encapsulated layer 104 is greater than the thickness of the antenna circuit chip 103, to reach better protecting effect.
As an example, including compression forming, transfer modling using the method that the first encapsulated layer 104 encapsulates the antenna chip One of molding, fluid-tight molding, vacuum lamination and spin coating, the material of first encapsulated layer 104 includes polyimides, silica gel And one of epoxy resin.
As shown in figure 4, then carrying out step 4), first encapsulated layer 104 and described is removed based on the separating layer 102 Support substrate 101 exposes the front of the antenna circuit chip 103.
As an example, the attribute according to the separating layer 102, it can be using such as mechanical stripping, laser lift-off, chemical stripping First encapsulated layer 104 and the support substrate 101 are removed in the methods of (such as wet etching) separation.
As shown in figure 5, step 5) is then carried out, in positive and described first encapsulated layer of the antenna circuit chip 103 104 surfaces form the first re-wiring layer 105, and first re-wiring layer 105 includes connecting with first encapsulated layer 104 The first face and the second opposite face.
Step 5) make first re-wiring layer 105 comprising steps of
Step 5-1), using chemical vapor deposition process or physical gas-phase deposition in the antenna circuit chip 103 Positive and described first encapsulated layer, 104 surface form dielectric layer, and the dielectric layer is performed etching to form patterned Jie Matter layer.The material of the dielectric layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, in fluorine-containing glass One or more kinds of combinations.
Preferably, the material selection of the dielectric layer is PI (polyimides), to further decrease technology difficulty and work Skill cost.
Step 5-2), using chemical vapor deposition process, evaporation process, sputtering technology, electroplating technology or chemical plating process Metal layer is formed in the patterned media layer surface, and the metal layer is performed etching to form patterned metal line Layer.The material of the metal wiring layer includes the combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
As shown in Fig. 6~Figure 14, step 6) is then carried out, an antenna structure is provided, the antenna structure includes the second envelope Fill layer 205, first antenna metal layer 203, the second re-wiring layer 206 and the first metal coupling 207, the first antenna metal Layer 203 is located at the first face of second encapsulated layer 205, and second re-wiring layer 206 is located at second encapsulated layer 205 The second face, the first antenna metal layer 203 and second re-wiring layer 206 are by passing through second encapsulated layer 205 the first metal connecting column 204 is electrically connected, and first metal coupling 207 is formed in second re-wiring layer 206 On.
Step 6) provides the antenna structure
As shown in fig. 6, carrying out step 6-1 first), a support substrate 201 is provided, is formed on the support substrate 201 Peeling layer 202.
As an example, the support substrate 201 include glass substrate, metal substrate, semiconductor substrate, polymer substrate and One of ceramic substrate.In the present embodiment, it is glass substrate, the glass substrate cost that the support substrate 201, which is selected, It is lower, it is easy to be formed on its surface peeling layer 202, and the difficulty of subsequent stripping technology can be reduced.
As an example, the peeling layer 202 includes one of adhesive tape and polymeric layer, the polymeric layer uses first Spin coating proceeding is coated on 201 surface of support substrate, then makes its curing molding using ultra-violet curing or heat curing process.
In the present embodiment, it is heat-curable glue that the peeling layer 202, which is selected, is formed in the branch support group by spin coating proceeding After on piece 201, its curing molding is made by heat curing process.Heat-curable glue performance is stablized, and surface is more smooth, is conducive to subsequent The production of re-wiring layer, also, in subsequent stripping technology, the difficulty of removing is lower.
As shown in Fig. 7~Fig. 8, step 6-2 is then carried out), in formation first antenna metal layer on the peeling layer 202 203, and in forming the first metal connecting column 204 on the first antenna metal layer 203.
As shown in Fig. 9~Figure 10, step 6-3 is then carried out), the first antenna gold is encapsulated using the second encapsulated layer 205 Belong to layer 203 and the first metal connecting column 204, and planarization process is carried out to second encapsulated layer 205, to appear described First metal connecting column 204.
As an example, encapsulating the first antenna metal layer 203 and first metal connection using the second encapsulated layer 205 The method of column 204 includes one of compression forming, Transfer molding, fluid-tight molding, vacuum lamination and spin coating, and described second The material of encapsulated layer 205 includes one of polyimides, silica gel and epoxy resin.
As shown in figure 11, step 6-4 is then carried out), in forming the second re-wiring layer on second encapsulated layer 205 206, and in forming the first metal coupling 207 on second re-wiring layer 206.First metal coupling 207 includes tin One of solder, silver solder and gold-tin eutectic solder.
As shown in figure 12, step 6-5 is then carried out), the support substrate 201 and institute are separated based on the peeling layer 202 The second encapsulated layer 205 is stated, to appear the first antenna metal layer 203.
As shown in Figure 13~Figure 14, step 6-6 is finally carried out), it is cut to independent antenna structure.
As shown in figure 15, step 7) is then carried out, the second face and described first of first re-wiring layer 105 is engaged Metal coupling 207.For example, can be using welding procedure in conjunction with the second face and described first of first re-wiring layer 105 Metal coupling 207.
As shown in figure 16, step 8) is then carried out, in forming the second gold medal on the second face of first re-wiring layer 105 Belong to connecting column 106, the height of the second metal connecting column 106 is not less than the top surface of the antenna structure.
The second metal connecting column 106 is made using bonding wire craft, the bonding wire craft includes hot pressing bonding wire craft, surpasses One of sound wave bonding wire craft and thermosonic bonding wire craft;The material of the second metal connecting column 106 include Au, One of Ag, Cu, Al.For example, the second metal connecting column 106 can be selected as Al, existed using supersonic welding Wiring technology It can complete to weld at lower temperature, technological temperature can be greatly reduced.For another example, the second metal connecting column 106 can To select as Au, excellent electric conductivity can be obtained.
Preferably, the both ends width of first re-wiring layer 105 be greater than the antenna structure width, described second Metal connecting column 106 is distributed in the upper of the first re-wiring layer 105 of the antenna structure periphery.
As shown in Figure 17~Figure 18, step 9) is then carried out, the antenna structure is encapsulated using third encapsulated layer 107, and Planarization process is carried out to 107 surface of third encapsulated layer, and the top surface of the second metal connecting column 106 is exposed to The third encapsulated layer 107.
As an example, including compression forming, transfer modling using the method that third encapsulated layer 107 encapsulates the antenna structure One of molding, fluid-tight molding, vacuum lamination and spin coating, the material of the third encapsulated layer 107 includes polyimides, silica gel And one of epoxy resin.
As shown in figure 19, step 10) is then carried out, forms the second antenna metal layer in 107 surface of third encapsulated layer 108, the second antenna metal layer 108 is connect with the second metal connecting column 106.
In the present embodiment, the second antenna metal layer 108 has in the vertical region of the first antenna metal layer 203 There is a window 110, to avoid blocking for described second antenna metal layer, 108 pairs of first antenna metal layer 203, reduces multilayer Interfering with each other between antenna, to improve the performance of stacked antenna.
As shown in figure 20, step 11) is finally carried out, is formed in first encapsulated layer 104 and appears described first again The through-hole of wiring layer 105, and the second metal coupling 109 is formed in the through-hole, to realize first re-wiring layer 105 Electrical draw.
Appear described as an example, being formed in first encapsulated layer 104 using etching technics or laser drilling process The through-hole of first re-wiring layer 105 forms the second metal coupling 109 using ball technique is planted in the through-hole, and described second Metal coupling 109 includes one of tin solder, silver solder and gold-tin eutectic solder.
As shown in figure 20, the present embodiment also provides a kind of encapsulating structure of antenna, comprising: antenna circuit chip 103, first Encapsulated layer 104, the first re-wiring layer 105, antenna structure, the second metal connecting column 106, third encapsulated layer 107, the second antenna Metal layer 108 and the second metal coupling 109.
As shown in figure 20, first encapsulated layer 104 coats the antenna chip, including the first face and opposite second Face, first face appear the front of the antenna chip.The material of first encapsulated layer 104 includes polyimides, silica gel And one of epoxy resin.
As shown in figure 20, first re-wiring layer 105 is formed in the front of the antenna circuit chip 103 and described First face of the first encapsulated layer 104, first re-wiring layer 105 include first connect with first encapsulated layer 104 Face and the second opposite face.
As an example, first re-wiring layer 105 includes patterned dielectric layer and patterned metal line Layer.The material of the dielectric layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, in fluorine-containing glass One or more combination, the material of the metal wiring layer include one or both of copper, aluminium, nickel, gold, silver, titanium with Upper combination.
As shown in figure 20, the antenna structure includes the second encapsulated layer 205, first antenna metal layer 203, second cloth again Line layer 206 and the first metal coupling 207, the first antenna metal layer 203 are located at the first face of second encapsulated layer 205, Second re-wiring layer 206 is located at the second face of second encapsulated layer 205, the first antenna metal layer 203 and institute The second re-wiring layer 206 is stated to be electrically connected by the first metal connecting column 204 for passing through second encapsulated layer 205, it is described First metal coupling 207 is formed on second re-wiring layer 206, first metal coupling 207 and first weight New route layer 105 engages.
As an example, second re-wiring layer 206 include the patterned first medium layer stacked gradually, it is graphical Metal wiring layer and patterned second dielectric layer.The material of the dielectric layer include epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, the combination of one or more of fluorine-containing glass, the material of the metal wiring layer include The combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
As an example, the material of the first metal connecting column 204 includes one of Au, Ag, Cu, Al.
As an example, first metal coupling 207 includes one of tin solder, silver solder and gold-tin eutectic solder.
As an example, the both ends width of first re-wiring layer 105 is greater than the width of the antenna structure, described the Two metal connecting columns 106 are distributed on the second face of the first re-wiring layer 105 of the antenna structure periphery.
As an example, the material of second encapsulated layer 205 includes one in polyimides, silica gel and epoxy resin Kind.
As shown in figure 20, the second metal connecting column 106 is formed in the second face of first re-wiring layer 105 On, the height of the second metal connecting column 106 is not less than the top surface of the antenna structure.
As shown in figure 20, the third encapsulated layer 107 coats the antenna structure, and the second metal connecting column 106 Top surface be exposed to the third encapsulated layer 107.
The material of the third encapsulated layer 107 includes one of polyimides, silica gel and epoxy resin.
As shown in figure 20, the second antenna metal layer 108 is formed in 107 surface of third encapsulated layer, and described second Antenna metal layer 108 is connect with the second metal connecting column 106.
As an example, the second antenna metal layer 108 has one in the vertical region of the first antenna metal layer 203 Window 110 reduces stacked antenna to avoid blocking for described second antenna metal layer, 108 pairs of first antenna metal layer 203 Between interfere with each other, to improve the performance of stacked antenna.
Second metal coupling 109 is formed in the through-hole of first encapsulated layer 104, and is electrically connected described first First face of re-wiring layer 105.As an example, second metal coupling 109 includes tin solder, silver solder and gold-tin alloy One of solder.
As described above, the encapsulating structure and packaging method of the antenna of the utility model, have the advantages that
The antenna packages structure of the utility model is using the method for multilayer re-wiring layer interconnection, it can be achieved that stacked antenna is golden Belong to the integration of layer, and the direct perpendicular interconnection between mutiple antennas encapsulating structure may be implemented, to greatly improve the effect of antenna Rate and performance, and the antenna packages structure of the utility model and method conformability are higher;
The utility model uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that antenna Encapsulating structure integrated level with higher and better encapsulation performance, before field of semiconductor package has a wide range of applications Scape.
So the utility model effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.

Claims (9)

1. a kind of encapsulating structure of antenna, which is characterized in that the encapsulating structure includes:
Antenna circuit chip;
First encapsulated layer coats the antenna circuit chip, and including the first face and the second opposite face, first face appears institute State the front of antenna circuit chip;
First re-wiring layer is formed in the first face of positive and described first encapsulated layer of the antenna circuit chip, described First re-wiring layer includes the first face connecting with first encapsulated layer and the second opposite face;
Antenna structure, including the second encapsulated layer, first antenna metal layer, the second re-wiring layer and the first metal coupling, it is described First antenna metal layer is located at the first face of second encapsulated layer, and second re-wiring layer is located at second encapsulated layer The second face, the first antenna metal layer and second re-wiring layer are by the first gold medal for passing through second encapsulated layer Belong to connecting column to be electrically connected, first metal coupling is formed on second re-wiring layer, first metal coupling It is engaged with first re-wiring layer;
Second metal connecting column is formed on the second face of first re-wiring layer, the height of the second metal connecting column Degree is not less than the top surface of the antenna structure;
Third encapsulated layer coats the antenna structure, and the top surface of the second metal connecting column is exposed to the third encapsulation Layer;
Second antenna metal layer is formed in the third encapsulation layer surface, the second antenna metal layer and second metal Connecting column connection;And
Second metal coupling is formed in the through-hole of first encapsulated layer, and is electrically connected first re-wiring layer First face.
2. the encapsulating structure of antenna according to claim 1, it is characterised in that: the material of first encapsulated layer includes poly- One of acid imide, silica gel and epoxy resin;The material of second encapsulated layer includes polyimides, silica gel and epoxy One of resin, the material of the third encapsulated layer include one of polyimides, silica gel and epoxy resin.
3. the encapsulating structure of antenna according to claim 1, it is characterised in that: first re-wiring layer includes figure The dielectric layer of change and patterned metal wiring layer.
4. the encapsulating structure of antenna according to claim 1, it is characterised in that: second re-wiring layer includes successively Patterned first medium layer, patterned metal wiring layer and the patterned second dielectric layer of stacking.
5. the encapsulating structure of antenna according to claim 3 or 4, it is characterised in that: the material of the dielectric layer includes ring Oxygen resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, one of fluorine-containing glass, the material of the metal wiring layer Including one of copper, aluminium, nickel, gold, silver, titanium.
6. the encapsulating structure of antenna according to claim 1, it is characterised in that: the first metal connecting column and described The material of two metal connecting columns includes one of Au, Ag, Cu, Al.
7. the encapsulating structure of antenna according to claim 1, it is characterised in that: first metal coupling and the second metal Convex block includes one of tin solder, silver solder and gold-tin eutectic solder.
8. the encapsulating structure of antenna according to claim 1, it is characterised in that: the both ends of first re-wiring layer are wide Degree is greater than the width of the antenna structure, and the second metal connecting column is distributed in the first of antenna structure periphery the cloth again On second face of line layer.
9. the encapsulating structure of antenna according to claim 1, it is characterised in that: the second antenna metal layer is described The vertical region of one antenna metal layer has a window, to avoid the second antenna metal layer to the first antenna metal layer Block.
CN201820359524.3U 2018-03-16 2018-03-16 The encapsulating structure of antenna Withdrawn - After Issue CN208336188U (en)

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CN201820359524.3U CN208336188U (en) 2018-03-16 2018-03-16 The encapsulating structure of antenna
US16/354,464 US11228087B2 (en) 2018-03-16 2019-03-15 Antenna package structure and antenna packaging method
US17/545,650 US11699840B2 (en) 2018-03-16 2021-12-08 Antenna package structure and antenna packaging method

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108305856A (en) * 2018-03-16 2018-07-20 中芯长电半导体(江阴)有限公司 The encapsulating structure and packaging method of antenna
TWI689019B (en) * 2019-05-29 2020-03-21 力成科技股份有限公司 Integrated antenna package structure and manufacturing method thereof
WO2020220175A1 (en) * 2019-04-28 2020-11-05 加特兰微电子科技(上海)有限公司 Package antenna and radar assembly package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108305856A (en) * 2018-03-16 2018-07-20 中芯长电半导体(江阴)有限公司 The encapsulating structure and packaging method of antenna
CN108305856B (en) * 2018-03-16 2023-08-18 盛合晶微半导体(江阴)有限公司 Antenna packaging structure and packaging method
WO2020220175A1 (en) * 2019-04-28 2020-11-05 加特兰微电子科技(上海)有限公司 Package antenna and radar assembly package
US12087999B2 (en) 2019-04-28 2024-09-10 Calterah Semiconductor Technology (Shanghai) Technology Co., Ltd. Package antenna and radar assembly package
TWI689019B (en) * 2019-05-29 2020-03-21 力成科技股份有限公司 Integrated antenna package structure and manufacturing method thereof
US10944165B2 (en) 2019-05-29 2021-03-09 Powertech Technology Inc. Integrated antenna package structure and manufacturing method thereof

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