CN108140575A - 用于原子精度蚀刻的独立控制等离子体密度、自由基组成及离子能量的低电子温度蚀刻腔室 - Google Patents
用于原子精度蚀刻的独立控制等离子体密度、自由基组成及离子能量的低电子温度蚀刻腔室 Download PDFInfo
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- 150000003254 radicals Chemical class 0.000 title claims abstract description 31
- 238000005530 etching Methods 0.000 title description 15
- 238000010894 electron beam technology Methods 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000012545 processing Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 83
- 150000002500 ions Chemical class 0.000 description 29
- 239000007789 gas Substances 0.000 description 20
- 238000001914 filtration Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32082—Radio frequency generated discharge
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H01J2237/3151—Etching
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- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3348—Problems associated with etching control of ion bombardment energy
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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Abstract
本公开关于操作等离子体反应器的方法,该等离子体反应器具有电子束等离子体源以独立调整电子束密度、等离子体离子能量及自由基总数。本公开进一步关于用于等离子体反应器的电子束源,该等离子体反应器具有RF驱动电极以产生电子束。
Description
发明人:
L·多尔夫、K·S·柯林斯、S·拉乌夫、K·拉马斯瓦米、J·D·卡达希、H·塔瓦索里、O·瑞吉尔曼、Y·张
相关申请的交叉引用
本申请案主张美国申请案第15/146,133号的优先权,该申请案的申请日为2016年5月4日,标题为“LOW ELECTORN TEMPERATURE ETCH CHAMBER WITH INDEPENDENT CONTROLOVER PLASMA DENSITY,RADICAL COMPOSITION AND ION ENERGY FOR ATOMIC PRECISIONETCHING(用于原子精度蚀刻的独立控制等离子体密度、自由基组成及离子能的低电子温度蚀刻腔室)”,作者为Leonid Dorf(L·多尔夫)等,该申请案主张美国临时申请案第62/247,949号的利益,该临时申请案的申请日为2015年10月29日,标题为“LOW ELECTRONTEMPERATURE ETCH CHAMBER WITH INDEPENDENT CONTROL OVER PLASMA DENSITY,RADICALCOMPOSITION AND ION ENERGY FOR ATOMIC PRECISION ETCHING(用于原子精度蚀刻的独立控制等离子体密度、自由基组成及离子能的低电子温度蚀刻腔室)”,作者为Leonid Dorf(L·多尔夫)等。
背景
技术领域
本公开关于用于原子精度蚀刻的独立控制等离子体密度、自由基组成及离子能量的低电子温度蚀刻腔室。
背景技术
微加工处理的缩小的尺寸及增加的复杂度使新颖的超敏感材料的使用成为必要,进而需要具有原子层精度的低损坏等离子体蚀刻。此增加了在等离子体处理期间对于精确控制离子能量及自由基组成的逐渐迫切的需求。
发明内容
一种在处理腔室中处理工件的方法,包括以下步骤:通过使用平行于该工件的表面的片状电子束在该处理腔室中产生等离子体,来限制等离子体电子温度;通过施加偏压功率至该腔室中的工件支撑件,来控制相对于该等离子体的工件电位在介于0及25伏特之间的范围;及通过控制供给该处理腔室的远程等离子体源的生产率,来独立地控制该等离子体中的自由基总数。
在一个实施例中,执行该限制该等离子体电子温度的步骤以在未施加偏压功率时,限制相对于该等离子体的工件电位不超过几个伏特。
在一个实施例中,限制电子束能量至一范围(例如,自亚于keV至几个keV),以便限制电子束的分解或自由基产生。
在一个实施例中,偏压功率控制该等离子体的离子能量至欲蚀刻的该工件中的材料的结合能量的数量级或接近该结合能量。
一种在处理腔室中处理工件的相关方法,包括以下步骤:在该处理腔室中产生等离子体,同时通过在该处理腔室中传递电子束来限制等离子体电子温度;控制耦合至工件支撑件的偏压功率的级别,以便设定等离子体离子能量至欲蚀刻的该工件上的材料的结合能量的数量级或接近该结合能量;及通过控制耦合至该处理腔室的远程等离子体源的生产率,来控制该等离子体中的自由基总数。在一个可选的实施例中,该等离子体离子能量被限制至一范围(例如,自亚于keV至几个keV),以便限制电子束的分解或自由基产生。
一种用于处理工件的等离子体反应器,包括:电子束枪封闭体,该电子束枪封闭体具有在该封闭体的一端处的射束出口开口,且在该封闭体的相对端处封闭着电子发射电极,该电子发射电极具有面对该射束出口的电子发射表面,该射束出口及该电子发射电极限定出该射束出口及该电子发射电极之间的射束传递路径;RF功率源及RF功率导体,该RF功率导体在该RF功率源及该电子发射电极之间耦合;及处理腔室,该处理腔室具有与该射束出口对齐的射束入口端口,在该处理腔室中的工件支撑件用于在与该射束传递路径平行的平面中支撑工件,及耦合至该处理腔室的气体分配器。
在一个实施例中,该RF功率源包括第一RF功率产生器及阻抗匹配,该阻抗匹配在该第一RF功率产生器及该电子发射电极之间耦合。在进一步的实施例中,该阻抗匹配包括双频阻抗匹配,该功率源进一步包括第二RF功率产生器,该第二RF功率产生器具有与该第一RF功率产生器的频率不同的频率。在一个实施例中,该第一RF功率产生器产生低频率且该第二RF功率产生器产生高频率。
在一个实施例中,等离子体反应器进一步包括气体供应,该气体供应具有供给路径至该电子束枪封闭体。在一个实施例中,等离子体反应器进一步包括在该射束出口开口中的离子阻断过滤器,该离子阻断过滤器准许电子流经该射束出口。
在一个实施例中,等离子体反应器进一步包括:背板,该背板与该电子束枪封闭体绝缘且接触该电子发射电极的背面;冷却板,该冷却板接触该背板;及该RF功率导体连接至该冷却板。在一个实施例中,等离子体反应器进一步包括绝缘器,该绝缘器环绕该电子发射电极的边缘,且设置于该电子发射电极及该电子束枪封闭体之间。
在一个实施例中,等离子体反应器进一步包括处理气体供应,该处理气体供应耦合至该气体分配器。
在一个实施例中,等离子体反应器进一步包括远程等离子体源,该远程等离子体源耦合至该处理腔室。
在一个实施例中,等离子体反应器进一步包括偏压功率产生器,该偏压功率产生器耦合至该工件支撑件。
在一个实施例中,该第一RF功率产生器、该第二RF功率产生器、该偏压功率产生器及该远程等离子体源为可独立控制的。
附图说明
因此,获得本发明上述实施例的方式且可以详细理解,可通过参考其实施例而具有本发明的更特定描述(简短总结如上),该等实施例图示于所附附图中。然而,注意所附附图仅图示本发明典型的实施例,因此不考虑限制其范围,因为本发明可允许其他等效实施例。
图1示出根据第一实施例的低损坏反应器。
图2描绘图1的反应器的操作方法。
图3示出具有电子束源的等离子体反应器,该电子束源包含RF驱动电子发射电极。
图4描绘图1的实施例的修改,其中e射束源为图3的电子束源,该电子束源包含RF驱动电子发射电极。
为了便于理解,尽可能使用相同组件符号,以标示附图中常见的相同组件。附图中的图皆为示意性且不按比例绘制。
具体实施方式
简介:
在处理腔室中使用平行于工件表面的电子片状射束(e射束)以产生等离子体提供等离子体电子温度Te上(约0.3eV)及等离子体离子能量上(未施加偏压功率时Ei小于几个eV)相较于传统等离子体技术一数量级的强度减低,因此使得电子束产生的等离子体成为针对处理特征在5nm及更低的理想选择。进一步地,因为分解仅通过高能量射束电子而非等离子体电子来执行,且因为分解横截面在约2keV的电子束能量或更低处大幅下降,可根据一个选项通过限制电子束能量而使得电子束产生的等离子体的化学组成成为缺乏自由基的。此允许外部自由基源独立控制等离子体自由基组成,从而成为使用电子束技术以产生等离子体的另一优点。
低损坏反应器:
在图1中所描绘的第一实施例中,提供低损坏反应器以允许原子精度处理(如在原子层蚀刻)及独立控制等离子体离子能量及等离子体的自由基组成。低损坏反应器包含:包含静电夹具52以维持工件54的处理腔室50、用于在处理腔室50中产生缺乏自由基、低电子温度(Te)等离子体的电子束(e射束)源56、用于在处理腔室50中经由出口58a至等离子体以产生及供应自由基的远程等离子体源58、及用于产生工件54及等离子体之间的电压下降(具有在0至50V的范围的精细控制)以加速离子超过蚀刻临界能量的偏压功率产生器60。出口58a可包含离子阻断格网90。e射束源56的射束出口56a被过滤格网170覆盖,过滤格网170准许电子形成电子束但阻断离子及其他等离子体副产物在e射束源56内产生。
偏压功率产生器60可具有提供在0至50V的范围的精细控制的偏压电压控制输入60a。在一个实施例中,该范围为0至25V。电子束源56包含控制电子束源56的电子能量的射束加速电压控制输入62。远程等离子体源58具有控制输入59,控制输入59用于控制远程等离子体源58供应自由基进入处理腔室50的速率。控制输入59独立于射束加速电压控制输入62。远程等离子体源58供应自由基进入处理腔室50的速率及电子束的能量是相互独立地控制。可以多种方式实现控制输入59。例如,控制输入59可控制在远程等离子体源58中驱动等离子体源功率施加器(未示出)的RF产生器的功率级别。如另一可能性,控制输入59可控制远程等离子体源58及处理腔室50之间的出口58a处的阀。可提供用于抽空处理腔室50的真空泵66。
因为在电子束产生的等离子体中的超低电子温度,工件相对于等离子体的电位非常低,仅为几个伏特(在没有施加偏压的情况下)。此较传统等离子体蚀刻工具中低很多,传统等离子体蚀刻工具典型地精细至约15V以上或超过约15V的范围。因此,不像传统工具,图1的低损坏反应器据此通过限制施加的偏压功率来允许0至25V的范围中的离子能量的精确控制。在此非常重要的范围中,等离子体离子能量接近(例如,10%内)或处于欲蚀刻材料的结合能量的数量级,而允许超低损坏蚀刻处理的效能。蚀刻速率在该离子能量下同样很低(仅为每分钟几个埃),而使得低损坏反应器也独特地适于原子精度蚀刻或原子层蚀刻。经由独立控制由远程等离子体源58的自由基产生速率所管理的自由基组成,达到允许蚀刻处理上的精确控制的另一关键优点。结果,在低损坏反应器中实现真实的使用超低损坏及每分钟仅一个至几个原子层的蚀刻速率的原子精度蚀刻。
在一个实施例中,提供操作低损坏反应器腔室的方法,其中独立控制等离子体离子能量及等离子体的自由基组成。在图2中描绘该方法且处理如下:
首先,限制等离子体电子温度不超过0.3eV及等离子体离子能量不超过几个eV(未施加偏压功率时)。此步骤通过在e射束源56中产生平行于工件表面的片状电子束来达成(图2的框310)。该射束产生处理腔室50中的等离子体。该限制等离子体电子温度的步骤帮助最小化工件相对于等离子体的电位(即,鞘层电压)使得该电位在没有施加偏压的情况下不多于约几个伏特。
第二,通过控制偏压功率产生器60以设定工件电位至0及25伏特之间的范围,来控制工件在处理腔室50内部相关于等离子体的电位(图2的框320)。交替地或等效地,通过控制偏压功率产生器60,来设定等离子体离子能量接近欲蚀刻材料的结合能量。
第三,作为非必要的一个选项,限制电子束能量至数百伏特及几千伏特之间的范围(图2的框330)。此具有最小化电子束的分解或自由基产生的效果。
第四,通过控制供给处理腔室的远程等离子体源的生产率,来独立控制等离子体中的自由基总数(图2的框340)。
具有RF驱动电极的e射束源
发展具工业价值的电子束等离子体源的挑战包含符合以下需求:
1.化学处理兼容性:化学侵略和/或沉积处理气体不应影响e射束源(枪)操作或使其成为不可能,如使用DC电子束源;相反地,e射束枪零件的喷溅不应不利地影响处理。
2.在宽广范围的处理气体腔室压力下操作的能力。
3.强健性,即,在涉及零件置换的预防维修事件之间操作持续长时间的能力。
4.高操作稳定性及可重现性。
5.对射束电子的密度及能量的独立控制。
所需要的是满足前述标准的电子射束源。
图3描绘具有满足上述标准的电子束(e射束)等离子体源的等离子体反应器的实施例。参考图3,装设发射电极110于背板120上。装设背板120于冷却板130上。陶瓷间隔器140及绝缘器150维持发射电极110于相对于电子枪主体160的位置。电子枪主体160可由导电性材料形成且连接至返回电位或至接地。在所示出的实施例中,电子枪主体160沿着e射束传递路径P延伸且在相对于发射电极110的远端处具有射束出口开口160a。放置过滤格网170于射束出口开口160a内。回填气体供给180自气体供应182传导适于充当电子源的气体(例如,氩)进入电子枪主体160的内部。冷却剂液体供给或管道190自冷却剂源192传导冷却剂至冷却板130。RF供给200传导RF功率经由冷却板130及经由背板120至发射电极110。绝缘器210环绕RF供给200的部分。电子枪主体160、发射电极110、背板120、冷却板130、陶瓷间隔器140、绝缘器150、及RF供给200一起形成包含于RF屏蔽件220内的e射束源组件212。RF供给200经由双频阻抗匹配230自RF功率产生器242及244接收RF功率。在一个实施例中,RF功率产生器242产生低频率RF功率且RF功率产生器244产生高频率RF功率。
在一个修改中,可将图3的实施例的e射束源组件212使用为图1的实施例的e射束源组件212。在图4中描绘该修改。
处理腔室260经由开口160a耦合至电子枪主体160,且具有耦合至处理气体供应272的顶棚气体分配器270。处理腔室260内的静电夹具280在平行于射束传递路径P的平面中支撑工件290。
在发射电极110及电子枪主体160(作为RF返回发挥作用)之间将RF等离子体放电点火。可通过RF功率产生器242、244来供应两个RF频率,包含低频率如2MHz及HF或VHF频率如60MHz。此提供对以下的独立控制:(1)等离子体密度(通过HF或VHF功率的级别来控制),决定射束电子的密度,及(2)发射电极110处的DC自偏压(通过低频率功率的级别来控制),决定射束电子的能量。一般而言,可通过控制低频率偏压功率产生器242的输出功率级别来控制射束电子的能量。对射束电子密度的独立控制也可通过新增电感耦合等离子体源至e射束源组件212来达成。
因为电子枪主体160的面积大于发射电极110的面积,RF感应DC自偏压在较小的发射电极110处会大很多,且可达到适合用于电子束技术的级别。例如,在约20mT的电子枪主体160内的内部压力下,自偏压可使用约600W的60MHz功率在约1.5kW的2MHz功率处达到1至1.5kV。在发射电极110处的鞘层中的加速离子轰击电极表面且造成离子感应的次级电子发射。这些发射的次级电子进而在它们移动远离电极表面时于相同鞘层电压下降中加速,导致电子束的形成。因此,发射电极110的发射表面的次级电子发射系数在决定射束电子的密度中扮演非常重大的角色。
将所施加RF功率的绝大部分以热的形式沉积进入发射电极110,原因在于高能量离子的常态轰击。冷却板130具有非传导性的冷却流体运行经过冷却板130,且经由背板120耦合至发射电极110。RF供给200经由冷却板130及背板120耦合至发射电极110。背板120起到RF平板的作用,均匀分配施加的RF功率遍及发射电极110。
过滤格网170具有高的高宽比的开口且防止RF等离子体离子及电子枪主体160内部产生的自由基逸漏进入处理腔室260。进一步地,处理腔室260内部的化学侵略处理气体被阻断而无法进入电子枪主体160内部。通过使用足够高的流动速率供应的惰性气体(例如,氩)回填电子枪主体160内部以产生可观的气体压力下降(例如,约30mT)跨过过滤格网170,来使用回填气体供给180达成此气体分隔。接着,高能量电子可穿过过滤格网170的高的高宽比的开口,原因在于其速度分布的高方向性。
以独立处理的气体回填电子枪主体160内部也允许发射电极110的电极发射表面的修改,以通过在表面上形成例如氮化硅来控制次级电子发射系数。由于等离子体放电的天性,实际上可使用任何材料(硅、陶瓷、石英)以形成发射电极110的发射表面,而不影响e射束源组件212的一般操作。
如果精准选择了发射表面材料,可仅通过运行HF或ICP等离子体(以低很多的自偏压)及适当的化学作用,就地清理由离开发射电极110的离子所喷溅且再次沉积于e射束源组件212的其他零件上的材料。同样地,只要涂覆层的电容足够小,可使用任何具处理兼容性且不必要为传导性的材料来涂覆电子枪主体160的接地表面。进入处理腔室260的喷溅材料的渗入也被过滤格网170可观地限制。
优点:
使用RF驱动电极(即,电极110)而非DC放电以产生电子束的优点为:电子束密度及电子束能量由施加至电极110的高频功率及低频功率个别独立控制。进一步地,在e射束源组件212的建构中可最小化金属或其他传导性材料的使用,而使得任何喷溅材料的经由过滤格网170进入处理腔室260的渗入一般对晶片处理而言较不具损坏性。
在处理腔室中使用平行于工件表面的电子片状射束(e射束)以产生等离子体提供等离子体电子温度Te上(约0.3eV)及等离子体离子能量Ei上(未施加偏压功率时小于2eV)相较于传统等离子体技术一数量级的强度减低。此允许等离子体离子能量减低至接近或低于欲蚀刻的材料(例如,硅、氧化硅、氮化硅)的结合能量。进一步地,因为分解仅由高能量射束电子而非等离子体电子来执行,且因为分解横截面在约2keV的电子束能量或更低处大幅下降,电子束产生的等离子体的化学组成可成为缺乏自由基的。此允许远程自由基源58独立控制等离子体自由基组成。
前述是本发明的实施例,可修改本发明的其他及进一步的实施例而不背离其基本范围,且该范围由随后的权利要求所决定。
Claims (15)
1.一种在处理腔室中处理工件的方法,包括以下步骤:
通过使用平行于所述工件的表面的片状电子束在所述处理腔室中产生等离子体,来限制等离子体电子温度;
通过控制耦合至工件支撑件的偏压功率的级别,来控制相对于所述等离子体的工件电位至介于0及25伏特之间的范围;及
通过控制供给所述处理腔室的远程等离子体源的生产率,来独立地控制所述等离子体中的自由基总数。
2.如权利要求1所述的方法,其中执行所述限制所述等离子体电子温度的步骤以在未施加偏压功率时,限制相对于所述等离子体的工件电位不超过几个伏特。
3.如权利要求1所述的方法,进一步包括以下步骤:限制电子束能量至自亚于keV至几个keV的范围。
4.如权利要求1所述的方法,其中所述控制偏压功率的级别的步骤包括以下步骤:设定所述等离子体的离子能量至欲蚀刻的所述工件中的材料的结合能量的数量级或接近所述结合能量。
5.一种在处理腔室中处理工件的方法,包括以下步骤:
在所述处理腔室中产生等离子体,同时通过在所述处理腔室中传递电子束来限制等离子体电子温度;
控制耦合至工件支撑件的偏压功率的级别,以便设定等离子体离子能量至欲蚀刻的所述工件上的材料的结合能量的数量级或接近所述结合能量;及
通过控制耦合至所述处理腔室的远程等离子体源的生产率,来控制所述等离子体中的自由基总数。
6.如权利要求5所述的方法,其中所述等离子体离子能量对应于在未施加偏压功率时的相对于所述等离子体的工件电位不超过几个伏特。
7.如权利要求5所述的方法,进一步包括以下步骤:限制所述电子束的电子束能量至自亚于keV至几个keV的范围。
8.如权利要求5所述的方法,其中所述控制耦合至工件支撑件的偏压的级别的步骤包括以下步骤:设定所述等离子体离子能量至欲蚀刻的所述材料的结合能量的数量级或接近所述结合能量。
9.一种用于处理工件的等离子体反应器,包括:
电子束枪封闭体,所述电子束枪封闭体具有在所述封闭体的一端处的射束出口开口,且在所述封闭体的相对端处封闭电子发射电极,所述电子发射电极具有面对所述射束出口的电子发射表面,所述射束出口及所述电子发射电极限定出所述射束出口及所述电子发射电极之间的射束传递路径;
RF功率源及RF功率导体,所述RF功率导体在所述RF功率源及所述电子发射电极之间耦合;及
处理腔室,所述处理腔室具有与所述射束出口对齐的射束入口端口,在所述处理腔室中的工件支撑件用于在与所述射束传递路径平行的平面中支撑工件,及耦合至所述处理腔室的气体分配器。
10.如权利要求9所述的等离子体反应器,其中所述RF功率源包括第一RF功率产生器及阻抗匹配,所述阻抗匹配在所述第一RF功率产生器及所述电子发射电极之间耦合。
11.如权利要求10所述的等离子体反应器,其中所述阻抗匹配包括双频阻抗匹配,所述功率源进一步包括第二RF功率产生器,所述第二RF功率产生器具有与所述第一RF功率产生器的频率不同的频率。
12.如权利要求11所述的等离子体反应器,其中所述第一RF功率产生器产生低频率且所述第二RF功率产生器产生高频率。
13.如权利要求9所述的等离子体反应器,进一步包括气体供应,所述气体供应具有供给路径进入所述电子束枪封闭体。
14.如权利要求13所述的等离子体反应器,进一步包括在所述射束出口开口中的离子阻断过滤器,所述离子阻断过滤器准许电子流经所述射束出口。
15.如权利要求9所述的等离子体反应器,进一步包括:
背板,所述背板与所述电子束枪封闭体绝缘且接触所述电子发射电极的背面;
冷却板,所述冷却板接触所述背板;及
其中所述RF功率导体连接至所述冷却板。
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US201562247949P | 2015-10-29 | 2015-10-29 | |
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US15/146,133 | 2016-05-04 | ||
US15/146,133 US9799491B2 (en) | 2015-10-29 | 2016-05-04 | Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching |
PCT/US2016/035313 WO2017074514A1 (en) | 2015-10-29 | 2016-06-01 | Low electron temperature etch chamber with independent control over plasma density, radical composition and ion energy for atomic precision etching |
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