CN108091567A - 半超结fs iegt结构及其制造方法 - Google Patents
半超结fs iegt结构及其制造方法 Download PDFInfo
- Publication number
- CN108091567A CN108091567A CN201711328973.8A CN201711328973A CN108091567A CN 108091567 A CN108091567 A CN 108091567A CN 201711328973 A CN201711328973 A CN 201711328973A CN 108091567 A CN108091567 A CN 108091567A
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- Prior art keywords
- iegt
- structures
- half superjunction
- manufacturing
- superjunction
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 230000003068 static effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711328973.8A CN108091567B (zh) | 2017-12-13 | 2017-12-13 | 半超结fs iegt结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711328973.8A CN108091567B (zh) | 2017-12-13 | 2017-12-13 | 半超结fs iegt结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108091567A true CN108091567A (zh) | 2018-05-29 |
CN108091567B CN108091567B (zh) | 2020-03-13 |
Family
ID=62175516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711328973.8A Active CN108091567B (zh) | 2017-12-13 | 2017-12-13 | 半超结fs iegt结构及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN108091567B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109449202A (zh) * | 2018-10-30 | 2019-03-08 | 广州工商学院 | 一种逆导双极型晶体管 |
CN109887990A (zh) * | 2019-01-30 | 2019-06-14 | 上海华虹宏力半导体制造有限公司 | 超结igbt器件及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110233684A1 (en) * | 2010-03-24 | 2011-09-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
CN105932056A (zh) * | 2016-07-01 | 2016-09-07 | 电子科技大学 | 一种具有超结的rb-igbt |
CN106024627A (zh) * | 2016-07-22 | 2016-10-12 | 泰科天润半导体科技(北京)有限公司 | 具有低关态损耗的SiC基超结IGBT的制作方法 |
US20170047319A1 (en) * | 2014-10-24 | 2017-02-16 | Fuji Electric Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
CN106463503A (zh) * | 2014-04-17 | 2017-02-22 | 罗姆股份有限公司 | 半导体装置 |
-
2017
- 2017-12-13 CN CN201711328973.8A patent/CN108091567B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110233684A1 (en) * | 2010-03-24 | 2011-09-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
CN106463503A (zh) * | 2014-04-17 | 2017-02-22 | 罗姆股份有限公司 | 半导体装置 |
US20170047319A1 (en) * | 2014-10-24 | 2017-02-16 | Fuji Electric Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
CN105932056A (zh) * | 2016-07-01 | 2016-09-07 | 电子科技大学 | 一种具有超结的rb-igbt |
CN106024627A (zh) * | 2016-07-22 | 2016-10-12 | 泰科天润半导体科技(北京)有限公司 | 具有低关态损耗的SiC基超结IGBT的制作方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109449202A (zh) * | 2018-10-30 | 2019-03-08 | 广州工商学院 | 一种逆导双极型晶体管 |
CN109449202B (zh) * | 2018-10-30 | 2021-10-22 | 广州工商学院 | 一种逆导双极型晶体管 |
CN109887990A (zh) * | 2019-01-30 | 2019-06-14 | 上海华虹宏力半导体制造有限公司 | 超结igbt器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108091567B (zh) | 2020-03-13 |
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Address after: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee after: Longteng Semiconductor Co.,Ltd. Address before: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee before: LONTEN SEMICONDUCTOR Co.,Ltd. Address after: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee after: LONTEN SEMICONDUCTOR Co.,Ltd. Address before: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee before: XI'AN LONTEN RENEWABLE ENERGY TECHNOLOGY Inc. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220321 Address after: 710000 export processing zone, No. 1, Fengcheng 12th Road, Xi'an Economic and Technological Development Zone, Shaanxi Province Patentee after: Longteng Semiconductor Co.,Ltd. Patentee after: Xi'an Longxiang Semiconductor Co.,Ltd. Address before: 710021 export processing zone, No.1, Fengcheng 12th Road, Xi'an City, Shaanxi Province Patentee before: Longteng Semiconductor Co.,Ltd. |