CN108074892A - 具有不同熔化温度的互连结构的封装体 - Google Patents

具有不同熔化温度的互连结构的封装体 Download PDF

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Publication number
CN108074892A
CN108074892A CN201711123924.0A CN201711123924A CN108074892A CN 108074892 A CN108074892 A CN 108074892A CN 201711123924 A CN201711123924 A CN 201711123924A CN 108074892 A CN108074892 A CN 108074892A
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interconnection structure
radiator
packaging body
electronic chip
interconnection
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CN201711123924.0A
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CN108074892B (zh
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A·格拉斯曼
J·赫格尔
A·凯斯勒
I·尼基廷
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

一种封装体(100)包括：至少一个电子芯片(102)；第一散热体(104)，所述至少一个电子芯片(102)通过第一互连结构(170)安装在所述第一散热体(104)上；第二散热体(106)，所述第二散热体(106)通过第二互连结构(172)安装在所述至少一个电子芯片(102)上或上方；以及包封材料(108)，所述包封材料(108)包封所述至少一个电子芯片(102)的至少一部分、所述第一散热体(104)的一部分和所述第二散热体(106)的一部分，其中，所述第一互连结构(170)被配置为相比所述第二互连结构(172)具有不同的熔化温度。

Description

具有不同熔化温度的互连结构的封装体
技术领域
本发明涉及多种封装体、一种车辆、一种使用方法以及一种制造封装体的方法。
背景技术
例如用于汽车应用的功率模块为功率器件(通常是包括一个或两个以上集成电路构件的电子芯片形式的功率半导体装置)提供物理容纳。功率模块的集成电路构件的例子是绝缘栅双极晶体管(IGBT：Insulated-Gate Bipolar Transistor)和二极管。
对于这种和其它封装体，期望在封装期间以高的空间精度、重复性和可靠性实施各种元件堆叠。此外，还期望封装体的设计不会受到太多约束的过度限制。然而，这是传统方法难以实现的。
发明内容
可能需要一种可以高度自由地制造的可靠的封装体。
根据一个示例性实施例，提供了一种封装体，其包括：至少一个电子芯片；第一散热体，所述至少一个电子芯片通过第一互连结构安装在所述第一散热体上；第二散热体，所述第二散热体通过第二互连结构安装在所述至少一个电子芯片上或上方；以及可选的包封材料，所述包封材料包封所述至少一个电子芯片的至少一部分、第一散热体的一部分和第二散热体的一部分，其中，所述第一互连结构被配置成相比所述第二互连结构具有不同的熔化(或再融化)温度。
根据另一示例性实施例，提供了一种封装体，其包括：至少一个电子芯片；第一散热体，所述至少一个电子芯片通过第一互连结构安装在所述第一散热体上；第二散热体，所述第二散热体安装在所述至少一个电子芯片上方；至少一个间隔体，所述至少一个间隔体布置在所述至少一个电子芯片与所述第二散热体之间；第二互连结构，所述第二互连结构将所述至少一个电子芯片与所述至少一个间隔体连接；第三互连结构，所述第三互连结构将所述至少一个间隔体与所述第二散热体连接；以及可选的包封材料，所述包封材料包封所述至少一个电子芯片的至少一部分、所述至少一个间隔体的至少一部分、所述第一散热体的一部分和所述第二散热体的一部分，其中，所述第一互连结构、所述第二互连结构和所述第三互连结构中的一个相比所述第一互连结构、所述第二互连结构和所述第三互连结构中的至少另一个具有不同的熔化(或再熔化)温度。
根据另一示例性实施例，提供了一种车辆，其包括具有上述特征的封装体中的一种。
根据又一示例性实施例，提供了一种制造封装体的方法，其中，所述方法包括：通过第一互连结构将至少一个电子芯片安装在第一散热体上；通过第二互连结构将第二散热体安装在所述至少一个电子芯片上或上方；可选地通过包封材料包封所述至少一个电子芯片的至少一部分、第一散热体的一部分和第二散热体的一部分；以及将第一互连结构配置成相比所述第二互连结构具有不同的熔化(或再融化)温度。
根据又一示例性实施例，提供了一种制造封装体的方法，其中，所述方法包括：通过第一互连结构将至少一个电子芯片安装在第一散热体上；通过第二互连结构将至少一个间隔体安装在所述至少一个电子芯片上；以及通过第三互连结构将第二散热体安装在所述间隔体上，其中，所述第一互连结构、所述第二互连结构和所述第三互连结构中的一个与所述第一互连结构、所述第二互连结构和所述第三互连结构中的其它两个相比具有不同的熔化(或再熔化)温度。
根据又一示例性实施例，具有上述特征的封装体中的一种用于汽车应用。
根据本发明的一个示例性实施例，提供了一种可以被配置为用于双面冷却的封装体或模块，所述封装体或模块具有非常高的可靠性和设计自由。这种封装体在两个相反的散热体之间夹置至少一个电子芯片，其中，整个布置可以可选地通过包封材料包封。在制造工序期间，互连结构形成在第一散热体与电子芯片之间以及电子芯片与第二散热体之间(在其间具有可选的间隔体)。已经证明，当用于互连所述组件的互连结构全部配置相同(例如全部由相同材料制成)并且都具有相同的熔点时，所有互连结构(甚至已经完成的互连结构)可以在互连结构形成工序期间同时熔化。然而已经证明，这种同时熔化封装体的两个、三个甚至更多个互连结构可能导致可靠性问题，例如，未填充间隙的形成、封装体的各个元件的位置不准确和/或互连材料回流到封装体内非期望的空间内。然而，本发明人已经认识到，为不同互连结构选择材料、类型、温度特性等使它们具有不同熔化或再熔化温度允许在通过各种互连结构互连各种元件的互连工序期间来强烈地抑制或甚至消除上述和其它可靠性问题。
进一步的示例性实施例的描述
在下文中，将解释所述封装体、所述车辆和所述方法的进一步的示例性实施例。
在本申请的上下文中，术语“互连结构”可以特别地指代通过将温度升高到或超过互连温度能够将封装体的两个组件(特别是电子芯片与散热体中的一个、和/或电子芯片与之间的可选的间隔体、和/或散热体中的一个与可选的间隔体)互连的接合部或材料，在所述互连温度下，互连材料与相邻组件之间或者没有另外的互连材料的相邻组件之间开始互连。
在钎焊材料的情况下，这种温度可以是可软焊互连材料的熔化温度。
“烧结”可以特别地指代一种通过热和/或压力压实和形成实心材料块而不会使其完全熔化超过液化点的工艺。致密化的驱动力是自由能随表面积的减小和表面自由能的降低而变化。烧结可以形成改性但自由能总体下降的低能量固-固接合。在烧结的情况下，互连温度因此可以是在要互连的粉状或粒状结构开始形成整体结构时的温度。
熔焊是这样一种互连技术，其除了要互连的组件的材料之外没有或不需要涉及任何或任何明显量的材料。作为这些附加材料的代替，可以通过仅仅将热能提供给要互连的两个组件的界面来形成熔焊互连。因此，熔焊通过直接在一起熔化组件的这些基材使得组件之间熔合而将组件材料接合起来。除了熔化基材之外，可以任选地将填充材料添加到接合部中，以形成熔化材料池，熔化材料池然后冷却以形成相比基材可以一样强或者甚至更强的接合部。压力也可以在熔焊期间与热量结合使用，或者它自己也可以用来产生熔焊部。
在本申请的上下文中，术语“熔化或再熔化温度”可以指代已经形成的互连结构丢失或组件变得再次分离时的温度，因为两个组件的材料或界面处再次变成液体或可流动。应该说，在涉及互连材料(例如涉及可软焊材料的钎焊连接或者涉及可烧结材料的烧结连接)的互连结构中，当另外的互连结构建立涉及的温度超过先前的互连材料的熔化温度时，互连材料本身可能倾向于再熔化。然而，当先前的互连结构使用这种互连材料已经建立时，在通过互连材料互连的两个元件之间的界面处，可能已经形成了合金。这种合金可以包括互连材料的材料，此外，在一些情况下可以包括互连组件中的一个或两者的材料。因此，现在与相邻材料混合的互连材料可能相比在第一次建立互连之前最初使用的互连材料具有不同的材料组分并因此具有不同的再熔化温度。因此，互连材料在第一次形成互连结构后的再熔化温度可能不同于它最初的熔化温度。
鉴于上述情况，在两个散热体之间这样堆叠电子芯片和间隔体可能是有利的：至少两个不同熔化和/或再熔化温度的互连结构可以被实施。此外，可能有利的是，在建立了一个或两个以上涉及至少加热到相应的互连温度的互连结构之后，随后形成的互连结构应该被配置为使得它们涉及加热到的互连温度(诸如互连材料的熔化温度)低于之前已经建立的一个或两个以上互连结构的熔化或再熔化温度。此时，可以避免已经形成的互连结构熔化或再熔化并可以防止使得封装体的组件在空间上不精确。
在一个实施例中，形成第一互连结构、第二互连结构和第三互连结构中的最后一个是在低到足以防止其它两个先前形成的互连结构在形成最后一个互连结构期间再熔化的互连温度下执行的。当仅形成两个互连结构时可以采取相应的措施：此时可以在低到足以防止另一个先前形成的互连结构在形成后一个互连结构期间再熔化的互连温度下形成第一互连结构和第二互连结构中的最后一个。因此，在最后一个互连结构的形成期间，可以使用足够适度的温度形成最后一个互连结构，以避免已经预先形成的其它一个或两个或更多个互连结构的再熔化。这使得已经形成的其它互连结构不可能再次开始变软或甚至变为液体，再次变软或甚至变为液体可能导致封装体的各种组件之间的配准精度的不期望的损失。所描述的特性可以通过相应地选择互连材料(具有相应的熔化温度)、互连技术(诸如涉及相应的处理温度的烧结、钎焊和熔焊)和相应互连温度以及选择制造中的封装体的所有材料的导热性等来确保。
在一个实施例中，第一互连结构包括以下组中的一个：钎焊结构和烧结结构。例如，通过高温稳定的SnSb钎焊材料来实施第一互连结构是优选的。通过扩散钎焊材料来实施第一互连结构也是优选的。钎焊具有成本低的优点，并且可能涉及200℃至400℃的温度。烧结具有提供可靠性高的优点，并且涉及200℃至250℃的温度。然而，通过温度升高触发的其它互连结构也可以实施。
特别地，第二互连结构可以包括以下组中的一个：钎焊结构和烧结结构。例如，通过例如由Pb焊料或SnAg焊料可以获得的具有高延展性的钎焊材料来实施第二互连结构是优选的。通过扩散钎焊材料来实施第二互连结构也是优选的。然而，通过温度升高触发的其它互连结构也可以实施。
在一个实施例中，所述封装体在所述至少一个电子芯片与第二散热体之间包括至少一个导电间隔体、特别是至少一个导电导热间隔体。这种间隔体可以是例如具有可选高度并且能够平衡要制造的封装体的各种元件之间的高度差的铜块。在封装体的操作期间，垂直电流可以穿过所述至少一个间隔体。此外，这种间隔体可以由诸如铜或铝的高导热材料制成，因此可以额外地有助于两个散热体从封装体除热。
在一个实施例中，所述第二互连结构将所述至少一个电子芯片与所述至少一个间隔体直接连接。在另一实施例中，所述封装体包括将所述至少一个间隔体与第二散热体直接连接的第三互连结构。在这种实施例中，总共有三个互连结构，它们可以在熔化或再熔化温度或互连温度方面彼此独立地调整。
在一个实施例中，所述第三互连结构包括以下组中的一个：熔焊结构(例如，摩擦熔焊或超声波熔焊)、钎焊结构和烧结结构。熔焊符合成本效益，可在中等温度下进行。例如，通过熔焊来实施第三互连结构是优选的。通过扩散钎焊材料(例如CuSn层)来实施第三互连结构也是优选的。如上所述，也可以实施仅在特征温度或高于特征温度时触发连接的其它互连技术。
在一个实施例中，所述第三互连结构被配置为相比第一互连结构和第二互连结构中的至少一个的材料具有更低的熔化或再熔化温度。在这种情况下，第三互连结构的材料首先在系统熔化工序中熔化。这已经证明增加了制造的封装体的可靠性，因为并不是所有的三个互连结构都在相同的温度下开始熔化。
在一个实施例中，第一互连结构、第二互连结构和第三互连结构中的一个被配置为相比第一互连结构、第二互连结构和第三互连结构中的另外两个具有更高的熔化或再熔化温度。在这种实施例中，避免其中一个互连结构在另外两个互连结构已经在一定温度下开始熔化时也会熔化。这允许更好地限定工艺和得到的封装体的性能。
在一个实施例中，第一互连结构、第二互连结构和第三互连结构中的两个被配置为相比第一互连结构、第二互连结构和第三互连结构中的剩余的一个具有更高的熔化或再熔化温度。在这种实施例中，具体地，互连结构中的一个在相对较低的熔化温度下开始熔化，因此可以在互连方面与其它互连结构分开处理。从而，可以提高所制造的封装体的可靠性。
在一个实施例中，第一散热体被热耦合到所述至少一个电子芯片的第一主表面，并且被配置用于从所述至少一个电子芯片去除热能。在另一个实施例中，第二散热体被热耦合(直接或间接地)到所述至少一个电子芯片的第二主表面，并且被配置用于从所述至少一个电子芯片去除热能(参见例如图1)。第二散热体也可以热耦合到热耦合到第一散热体的电子芯片之外的另一电子芯片的主表面。因此，各个散热体的至少一个组成部分可以由诸如陶瓷(如氧化铝、氮化铝、氮化硅等)的高导热性材料制成。
在一个实施例中，所述封装体被配置为用于双面冷却。在这种实施例中，热量从一个或两个以上电子芯片的两个相反的主表面去除。热量可以经由可以形成封装体的外表面的一部分的散热体消散。
在一个实施例中，所述封装体包括导电接触结构、特别是引线框架，其部分在包封材料内延伸、部分在包封材料外延伸，并且与所述至少一个电子芯片电耦合。这允许将包封的电子芯片与外围电子装置电连接。所提到的引线框架可以部分在包封材料内延伸、部分在包封材料外延伸(特别是形成一个或两个以上暴露的引线)，并且可以与所述至少一个电子芯片电耦合(例如通过导线接合)。通过这种导电接触结构，所述至少一个电子芯片可以耦合到封装体的外围电子装置。为此，导电接触结构的一个或两个以上引脚可以延伸到所述包封材料外。
在一个实施例中，所述封装体包括芯片载体，所述至少一个电子芯片安装在所述芯片载体上。也可能的是，在封装体中提供多于一个的芯片载体和/或多于一个的电子芯片安装在同一个芯片载体上。例如，所述至少一个电子芯片可以例如通过钎焊、烧结、粘附等机械地和/或电连接在芯片载体上。第一散热体可以被实施为芯片载体。
在一个实施例中，所述封装体包括将芯片载体与导电接触结构电连接的电连接元件、特别是以下组中的至少一个：接合导线、接合带和钎焊结构。例如，这种电连接元件可以由铝或铜制成。
在一个实施例中，所述第一散热体热耦合到所述至少一个电子芯片的第一主表面，并且被配置用于从所述至少一个电子芯片去除热能，其中，所述包封材料可以包封所述第一散热体的一部分。在一个实施例中，所述第一散热体(和/或第二散热体)可以包括具有高导热率的材料，以便能够高效地将热量从一个或两个以上电子芯片去除到封装体的环境中。特别地，散热体中的至少一个作为整体或其材料的导热率可以为至少10W/mK，特别是至少50W/mK。
在一个实施例中，所述第二散热体热耦合到所述至少一个电子芯片的或至少一个另外的电子芯片的第二主表面，并且被配置用于从所述至少一个电子芯片或所述至少一个另外的电子芯片去除热能，其中，所述包封材料可以包封所述第二散热体的一部分。所述包封材料可以包封所述第二散热体的一部分(特别是仅一部分，以使得第二散热体形成封装体的外表面的一部分，这在其散热能力方面是有利的)。提供两个散热体允许实现一种双面冷却构型。
在一个实施例中，所述第一散热体被配置为上述芯片载体。在这种配置中，所述第一散热体可以同时用于承载所述至少一个电子芯片和用于从所述封装体去除热量，所述热量在封装体的操作期间由芯片产生。
在一个实施例中，所述第一散热体和所述第二散热体中的至少一个包括电绝缘(并且优选地高导热)层，其具有被第一导电层覆盖的第一主表面，并且具有被第二导电层覆盖的第二主表面。例如，所述电绝缘层可以同时是高导热性的，这可以例如通过提供陶瓷层来实现。所述导电层中的至少一个可以是组合高导热性和高导电性的铜层。然而，铝也是用于导电层中的至少一个的合适的材料选择。例如，所述第一散热体和所述第二散热体中的至少一个可以被配置为以下组中的至少一个：直接铜接合(DCB：Direct CopperBonding)衬底和直接铝接合(DAB：Direct Aluminum Bonding)衬底。
可用于其它实施例的替代性芯片载体可以是任何转接板，例如衬底、陶瓷衬底、层状衬底、引线框架、IMS(绝缘金属衬底，Insulated Metal Substrate)、PCB(印刷电路板，Printed Circuit Board)等。
在一个实施例中，在将所述至少一个间隔体安装在所述至少一个电子芯片上之前，将所述第二散热体安装在所述至少一个间隔体上。在这种实施例中，所述第二散热体可以安装在间隔体上，且单独地，所述至少一个电子芯片可以安装在所述第一散热体上。从而获得两个双层堆叠体。随后，所述两个双层堆叠体可以通过由第二互连结构将至少一个电子芯片与所述至少一个间隔体互连而被互连。当第三互连结构在高温下制造时，这种实施例是高度优选的，否则将导致第一互连结构和/或第二互连结构再熔化的危险。这将导致下部的元件在再熔化的第一互连结构上游动或浮动，这将降低封装体的空间精度和可靠性。
仍然参考前面描述的实施例，在将所述至少一个间隔体安装在所述至少一个电子芯片上之前，可以将所述至少一个电子芯片安装在所述第一散热体上。因此，可能是有利的是，首先形成两个单独的双结构堆叠体(即，电子芯片在第一散热体上，第二散热体在间隔体上)，然后两个单独的双结构堆叠体互连(例如通过钎焊、烧结或熔焊)。
在一个实施例中，所述包封材料包括以下组中的至少一种：模制化合物和层合物。在一个优选实施例中，所述包封材料是模制化合物。对于通过模制进行包封，可以使用塑性材料或陶瓷材料。所述包封材料可以包括环氧树脂材料。例如用于提高导热性的填料颗粒(例如SiO2、Al2O3、Si3N4、BN、AlN、金刚石等)可以嵌入在包封材料的环氧树脂基基质中。
在一个实施例中，所述电子芯片被配置为功率半导体芯片。因此，所述电子芯片(例如半导体芯片)可以用于例如汽车领域的功率应用，并且可以例如具有至少一个集成绝缘栅双极晶体管(IGBT)和/或至少一个另外类型的晶体管(例如MOSFET、JFET等)和/或至少一个集成二极管。这种集成电路元件可以例如以硅技术或基于宽带隙半导体(例如碳化硅、氮化镓或硅上氮化镓)制成。半导体功率芯片可以包括一个或两个以上场效应晶体管、二极管、逆变器电路、半桥、全桥、驱动器、逻辑电路、其它装置等。
在一个实施例中，所述电子芯片经受垂直电流。根据本发明的示例性实施例的封装体构型特别适用于需要垂直电流、即垂直于所述电子芯片的两个相反的主表面的方向上的电流的大功率应用，所述两个相反的主表面中的一个用于将所述电子芯片安装在所述载体上。
在多个实施例中，所述封装体可以被配置为半桥、共射共基电路、由场效应晶体管和双极晶体管彼此并联连接构成的电路、或功率半导体电路。因此，根据示例性实施例的封装构型与各种不同的电路概念的要求兼容。
在一个实施例中，所述封装体被配置为以下组中的一种：引线框架连接的功率模块、晶体管外形(TO：Transistor Outline)电子器件、四方扁平无引线封装(QFN：Quad FlatNo Lead Package)电子器件、小外形(SO：Small Outline)电子器件、小外形晶体管(SOT：Small Outline Transistor)电子器件以及薄型小外形封装(TSOP：Thin Small OutlinePackage)电子器件。因此，根据一个示例性实施例的封装体与标准封装概念完全兼容(特别是与标准TO封装概念完全兼容)，并且外观上作为常规电子器件呈现，这是高度便利用户的。在一个实施例中，所述封装体被配置为功率模块、例如模制功率模块。例如，所述电子器件的一个示例性实施例可以是智能功率模块(IPM：Intelligent Power Module)。
作为形成电子芯片的基础的衬底或晶片，可以使用半导体衬底、优选硅衬底。替代性地，可以提供硅氧化物或另一绝缘体衬底。也可以实现锗衬底或III-V族半导体材料。例如，示例性实施例可以以GaN或SiC技术实现。
此外，示例性实施例可以利用诸如适当的刻蚀技术(包括各向同性和各向异性刻蚀技术、特别是等离子体刻蚀、干刻蚀、湿刻蚀)、图案化技术(其可能涉及光刻掩模)、沉积技术(例如化学气相沉积(CVD：Chemical Vapor Deposition)、等离子体增强化学气相沉积(PECVD：Plasma Enhanced Chemical Vapor Deposition)、原子层沉积(ALD：Atomic LayerDeposition)、溅射等)的标准半导体加工技术。
从结合附图所作的以下描述和所附权利要求书，本发明的上述和其它目的、特征和优点将变得显见，其中，相同的部件或元件由相同的附图标记表示。
附图说明
所包括的附图示出了示例性实施例，以提供对示例性实施例的进一步理解并构成说明书的一部分。
在图中：
图1示出了根据一个示例性实施例的双面冷却封装体的剖视图。
图2是示出了根据一个示例性实施例的封装体的剖视图的图像。
图3是示出了根据另一示例性实施例的封装体的剖视图的图像。
图4示出了根据一个示例性实施例的具有封装体的车辆的示意图。
具体实施方式
图中的图示是示意性的。
在更加详细地进一步描述示例性实施例之前，将概述本发明人在开发示例性实施例所基于的一些基本考虑，所述示例性实施例提供了一种在运行期间具有低损耗的电子可靠封装体。
根据本发明的一个示例性实施例，提供了实施具有不同特性的互连层的双面冷却封装体。
封装体或模块可以由形成第一散热体的下部直接铜接合衬底(DCB衬底)、第一焊料层(形成第一互连结构)、至少一个电子芯片、第二焊料层(构成第二互连结构)、第三焊料层和作为第二散热体的一个实施例的上部DCB组成。然而，已经证明，三个互连结构(即，上述第一、第二和第三焊料层)使用相同材料的传统方法涉及可靠性问题。
本发明人已经发现，相同材料的上述三个互连结构在系统钎焊工序期间可能涉及一些问题。这种系统钎焊工序涉及下部DCB、芯片、间隔体和上部DCB的布置结构的形成。当所有三个互连结构在相同温度下熔化或再熔化时，可能会发生不期望的影响。这些影响可以是电子芯片之下的凹陷或空隙区域、间隔体的未被限定的定位或浮动、间隔体周围的不期望的钎焊材料连接的形成等。这种影响通常可以降低制造的封装体的可靠性。
此外，钎焊材料仅具有有限的导热性，使得这种常规模块的热性能可能不足以用于高性能功率应用。此外，由于间隔体浮动到电子芯片的前侧上所引起的空间消耗可能会恶化热性能，因为间隔体的尺寸可能需要制造成低于发射极焊盘。
为了克服上述和其它缺点，本发明的一个示例性实施例提供了一种封装体，其中，不同的互连结构被配置为使得至少一个互连结构相比其余互连结构具有更高的熔点。这可以例如通过高温熔化钎焊材料(例如J-合金或高铅)的实施方式来实施。而且，一个或两个以上烧结层代替传统钎焊结构的实施方式是有利的措施。此外，熔焊可以实施为用于封装体的任何互连结构的互连技术，但是对于最上面的一个互连结构是高度优选的。
在一个优选实施例中，三个所述互连结构中的至少一个被实施为具有较低熔化温度的材料，因为在系统钎焊期间可以利用所谓的焊接夹具来实现模块或芯片的整个高度。PCB、芯片和间隔体的公差可以通过调整互连材料(例如通过SnAg钎焊材料提供)的桥接性能至少部分地平衡。关于电子芯片之下互连结构，这可以提高下部DCB的导热性。此外，可以提高电子芯片的位置精度，因为可以可靠地避免浮动。这也增加了设备的紧凑性。此外，通过采取所描述的措施可以提高可靠性。
电子芯片和间隔体之间的互连结构可以被配置成使得间隔体的导热性得到改善。因为可以抑制浮动效应，所以间隔体的位置精度能够显著提高。这也允许配置具有较大尺寸的间隔体，这再次进一步增加了封装体的热性能。
关于间隔体和上部散热体之间的互连结构，可以将其配置成朝向间隔体的导热性能够得到提高。由低熔点材料形成这种互连结构可能是有利的。
根据本发明的一个示例性实施例，提供了一种用于功率半导体应用的双面冷却模块，其具有集成在封装体或模块中的电隔离结构。这种封装体的互连结构可以被配置为使得三个互连结构中的一个相比其余的互连层具有更高的熔点或再熔点。三个互连结构中的两个相比其余互连结构具有更高的熔点或再熔点也是有利的。
特别是对于第三互连结构，熔焊已被证明是钎焊或烧结的有意义的替代。熔焊不必涉及单独的互连材料，而是当之间的局部温度足够高而使一个或两个组分熔化时简单地连接这两个要连接的组分。
下表1示出了根据各种不同互连结构的配置的本发明的不同实施例(第一散热体与至少一个电子芯片之间的第一互连结构，至少一个电子芯片与至少一个间隔体之间的第二互连结构，至少一个间隔体和第二散热体之间的第三互连结构)：
实施例 第一互连结构 第二互连结构 第三互连结构
实施例A 烧结 钎焊 钎焊
实施例B 钎焊 烧结 钎焊
实施例C 钎焊 钎焊 烧结
实施例D 钎焊 烧结 烧结
实施例E 烧结 钎焊 烧结
实施例F 烧结 烧结 钎焊
实施例G 钎焊 钎焊 熔焊
实施例H 钎焊 烧结 熔焊
实施例I 烧结 钎焊 熔焊
实施例J 烧结 烧结 熔焊
表1
下表2提供了根据各种互连结构的熔化或再熔化温度的本发明的进一步的实施例。在该表2中，三个上述熔化或再熔化温度X、Y、Z满足条件X>Y>Z。参考表2，第一互连结构、第二互连结构和第三互连结构中的每一个可以从烧结、钎焊和熔焊中自由地选择。
实施例 第一互连结构 第二互连结构 第三互连结构
实施例I X Y Y
实施例II Y X Y
实施例III Y Y X
实施例IV X X Y
实施例V X Y X
实施例VI Y X X
实施例VII X Y Z
实施例VIII X Z Y
实施例IX Y X Z
实施例X Y Z X
实施例XI Z X Y
实施例XII Z Y X
表2
在下文中，将更详细地描述三个特别优选的实施例：
在第一优选实施例中，第一互连结构实施为钎焊互连结构(例如使用Sb基钎焊材料)，第二互连结构实施为使用与第一互连结构相同的钎焊材料的钎焊互连结构，第三互连结构实施为熔焊连接结构。
在第二优选实施例中，第一互连结构实施为钎焊互连结构(例如使用扩散钎焊材料)，第二互连结构实施为使用不同于第一互连结构的另一种钎焊材料(例如诸如SnSb焊料或Pb焊料的可延展的高熔点钎焊材料)的钎焊互连结构，第三互连结构实施为熔焊连接结构。
在第三优选实施例中，第一互连结构实施为钎焊互连结构(例如使用SnAg基钎焊材料)，第二互连结构实施为使用与第一互连结构相同的钎焊材料的钎焊互连结构，第三互连结构实施为又一种钎焊连接结构(例如SnSb基焊料)。
在所有三个实施例中，可以在不再熔化芯片和下部DCB的情况下将间隔体安装在上部DCB上。
图1示出了根据一个示例性实施例的双面冷却封装体100的剖视图。
根据图1的封装体100包括两个电子芯片102，所述电子芯片102这里实施为功率半导体芯片。图1左侧所示的电子芯片102可以是二极管芯片，而图1右侧所示的电子芯片102可以是IGBT(绝缘栅双极晶体管，Insulated Gate Bipolar Transistor)芯片。
这里实施为直接铜接合(DCB)衬底的第一散热体104热耦合和机械耦合到电子芯片102的第一主表面，并形成封装体100的外表面的一部分。第一散热体104被配置用于在封装体100操作期间将热能从电子芯片102去除到封装体外部冷却体和/或冷却流体(未示出)。第一散热体104包括在此由陶瓷材料制成的中心电绝缘导热层110，所述中心电绝缘导热层110具有由第一导电层112覆盖的第一主表面，第一导电层112这里实施为铜层，并且所述中心电绝缘导热层110具有由第二导电层114覆盖的相反的第二主表面，第二导电层114这里实施为另外的铜层。电子芯片102被安装和钎焊或烧结在第一散热体104上，并且通过接合线176与第一导电层112电连接。因此，第一散热体104用作芯片载体和散热器。第一散热体104的第二导电层114形成封装体100的外表面的一部分，从而显著地有助于在封装体100的操作期间从电子芯片102除热。
可以实施为铜块的可选的导电导热隔离体126被钎焊或烧结到电子芯片102的上主表面上。
此外，第二散热体106经由间隔体126热耦合到电子芯片102的第二主表面。另外，第二散热体106包括可以由陶瓷制成的中心电绝缘导热层110，所述中心电绝缘导热层110具有被第一导电层112覆盖的第一主表面，第一导电层112这里实施为铜层，并且所述中心电绝缘导热层110具有由第二导电层114覆盖的相反的第二主表面，第二导电层114这里实施为另外的铜层。第二散热体106的第一导电层112被钎焊或烧结或熔焊到间隔体126上。第二散热体106的第二导电层114形成封装体100的外表面的一部分，从而显著地有助于在封装体100的操作期间从电子芯片102除热。总体上，第二散热体106被配置为用于从电子芯片102去除热能的散热器。
这里被实施为引线框架的导电接触结构118部分在包封材料108内延伸、部分在包封材料108外延伸，并且经由与第一散热体104的图案化的第一导电层112的钎焊或烧结连接以及经由接合线176与电子芯片102电耦合。
此外，封装体100包括模制型包封材料108，其包封电子芯片102、间隔体126、导电接触结构118的仅一部分、第一散热体104的仅一部分和第二散热体106的仅一部分。导电接触结构118的由包封材料108包封的部分用于电接触电子芯片102，而导电接触结构118的从包封材料108露出的另一部分提供用于连接外围电子装置(未图示)的一个或两个以上引线。由于导电接触结构118部分在包封材料108内延伸、部分在包封材料108外延伸并且与电子芯片102电耦合，所以它能够在封装体100的外部和内部之间提供电耦合。
所述封装体100可以按如下方式制造：散热体104、106以及导电接触结构118可以通过蚀刻而被粗糙化。此后，电子芯片102可以被钎焊或烧结到第一散热体104上。之后，导电接触结构118与第一散热体104的连接可以通过钎焊或烧结、导线接合等来实现。然后，可选的间隔体126可以钎焊或烧结在电子芯片102的顶部上。这之后可以是第二散热体106通过钎焊或烧结或熔焊连接在间隔体126上。之后，可以进行模制包封，使得包封材料108填充所述组件之间的间隙并且保持散热体104、106的外表面不被覆盖。
所述电子芯片102通过第一互连结构170安装在第一散热体104的图案化的第一导电层112上。间隔体126通过第二互连结构172安装在电子芯片102上。第二散热体106的第一导电层112通过第三互连结构174安装在间隔体126上和电子芯片102的上方。第一互连结构170、第二互连结构172和第三互连结构174中的每一个可以是钎焊结构或烧结结构或者可以通过熔焊形成。
所述第一互连结构170可被配置为相比第二互连结构172和第三互连结构174具有不同的熔化或再熔化温度。有利地，第一互连结构170、第二互连结构172和第三互连结构174的材料可以彼此不同，特别是可具有不同的熔点。例如，第一互连结构170可以由与制造第二互连结构172的材料相比具有不同的熔化温度的材料制成。也可能的是，第三互连结构174由相比第一互连结构170和第二互连结构172中的至少一个的材料具有更低的熔化温度的材料制成。然而，第三互连结构174也可以是不涉及另外的材料的熔焊互连结构。有利地，第一互连结构170、第二互连结构172和第三互连结构174中的一个由相比第一互连结构170、第二互连结构172和第三互连结构174中的另外两个具有更高的熔化温度的材料制成。特别可能的是，第一互连结构170、第二互连结构172和第三互连结构174中的两个由相比第一互连结构170、第二互连结构172和第三互连结构174中的剩余的一个具有更高的熔化温度的材料制成。
通过以所描述的方式配置互连结构170、172、174，封装体100可以高可靠性地制造。特别地，电子芯片102的和间隔体126的空间精度可以很高，因为可以避免由于所有互连结构170、172、174的同时熔化引起的未被限定的浮动。此外，可以避免钎焊材料不期望地回流在间隔体126的未被限定的表面上。另外，可以安全地避免在电子芯片102下方形成峡弯形凹陷或未填充区域。
图2是示出了根据一个示例性实施例的封装体100的剖视图的图像。
图2示出了其中电子芯片102烧结在作为第一散热体104的下部DCB(直接铜接合衬底)上的实施例。间隔体126钎焊到电子芯片102的前侧。此外，间隔体126可以钎焊到作为第二散热体106的上部DCB上。这种类型的封装体100可以获得非常高的可靠性。
图3是示出了根据另一示例性实施例的封装体100的剖视图的图像。
参考图3的实施例，所述电子芯片102已经烧结在作为第一散热体104的下部DCB上。间隔体126烧结在电子芯片102的前侧。此外，间隔体126钎焊到作为第二散热体106的上部DCB上。
同在图3中的实施例一样，可以实现非常高的可靠性。
图4示出了根据一个示例性实施例的具有封装体100的车辆122的示意图。
更具体地，功率封装体100可以形成控制发动机/电池组154的操作的控制块152的一部分。因此，根据本发明的一个示例性实施例的封装体100或功率模块可以用于汽车应用。这种功率封装体100的优选应用是实施为用于车辆122的逆变器电路或逆向整流器，所述车辆122可以是电动车辆或者可以是混合动力车辆。这种逆变器可以将电池的直流电(DC)转换到用于驱动车辆122的电动发动机的交流电(AC)。在混合动力车辆中，还可以至少部分地回收机械能并且通过逆变器将它转换回电能给电池充电。在这种汽车逆变器应用中，在功率封装体100的操作期间会产生极大的热量。所述热量可以通过上述双面冷却概念高效地去除。然而，应该说，在其它实施例中，单面冷却也可能是足够的。
应当注意，术语“包括”不排除其它元件或特征，并且“一个”或“一”不排除多个。也可以组合针对不同实施例描述的元件。还应当注意，附图标记不应被解释为限制权利要求的范围。此外，本申请的范围不旨在限于说明书中所描述的工艺、机器、制造、物质组成、手段、方法和步骤的特殊实施例。因此，所附权利要求旨在它们的范围内包括这种工艺、机器、制造、物质组成、手段、方法或步骤。

Claims (26)

1.一种封装体(100)，包括：
●至少一个电子芯片(102)；
●第一散热体(104)，所述至少一个电子芯片(102)通过第一互连结构(170)安装在所述第一散热体(104)上；
●第二散热体(106)，所述第二散热体(106)通过第二互连结构(172)安装在所述至少一个电子芯片(102)上或上方；
其中，所述第一互连结构(170)被配置为相比所述第二互连结构(172)具有不同的熔化温度。
2.根据权利要求1所述的封装体(100)，其中，所述封装体(100)包括包封材料(108)，所述包封材料(108)包封所述至少一个电子芯片(102)的至少一部分、所述第一散热体(104)的一部分和所述第二散热体(106)的一部分。
3.根据权利要求1或2所述的封装体(100)，其中，所述第一互连结构(170)包括以下组中的一个：钎焊结构和烧结结构。
4.根据权利要求1至3中任一项所述的封装体(100)，其中，所述第二互连结构(172)包括以下组中的一个：钎焊结构和烧结结构。
5.根据权利要求1至4中任一项所述的封装体(100)，其中，所述封装体(100)在所述至少一个电子芯片(102)与所述第二散热体(106)之间包括至少一个导电间隔体(126)，特别是至少一个导电导热间隔体(126)。
6.根据权利要求5所述的封装体(100)，其中，所述第二互连结构(172)将所述至少一个电子芯片(102)与所述至少一个导电间隔体(126)直接连接。
7.根据权利要求1至6中任一项所述的封装体(100)，其中，至少所述第一互连结构(170)包括Pb基钎焊材料或SnSb基钎焊材料。
8.根据权利要求5或7所述的封装体(100)，其中，所述封装体(100)包括将所述至少一个导电间隔件体(126)与所述第二散热体(106)直接连接的第三互连结构(174)。
9.根据权利要求8所述的封装体(100)，其中，所述第三互连结构(174)包括以下组中的一个：熔焊结构、钎焊结构和烧结结构。
10.根据权利要求8或9所述的封装体(100)，其中，所述第三互连结构(174)被配置为相比所述第一互连结构(170)和所述第二互连结构(172)中的至少一个具有更低的熔化温度。
11.根据权利要求10所述的封装体(100)，其中，所述第二互连结构(172)和所述第三互连结构(174)被配置为相比所述第一互连结构(170)具有更低的熔化温度。
12.根据权利要求7至11中任一项所述的封装体(100)
其中，所述第二互连结构(172)和所述第三互连结构(174)中的至少一个包括Pb基材料或Ag基材料、特别是SnAg。
13.根据权利要求7至12中任一项所述的封装体(100)，其中，所述第一互连结构(170)、所述第二互连结构(172)和所述第三互连结构(174)中的一个被配置为相比所述第一互连结构(170)、第二互连结构(172)和第三互连结构(174)中的其它两个具有更高的熔化温度。
14.根据权利要求7至13中任一项所述的封装体(100)，其中，所述第一互连结构(170)、所述第二互连结构(172)和所述第三互连结构(174)中的两个被配置为相比所述第一互连结构(170)、第二互连结构(172)和第三互连结构(174)中的剩余的一个具有更高的熔化温度。
15.根据权利要求1至14中任一项所述的封装体(100)，其中，所述封装体(100)被配置用于双面冷却。
16.根据权利要求1至15中任一项所述的封装体(100)，其中，所述第一散热体(104)和所述第二散热体(106)中的至少一个包括电绝缘层(110)，所述电绝缘层(110)具有由第一导电层(112)覆盖的第一主表面并且具有由第二导电层(114)覆盖的第二主表面。
17.一种封装体(100)，包括：
●至少一个电子芯片(102)；
●第一散热体(104)，所述至少一个电子芯片(102)通过第一互连结构(170)安装在所述第一散热体(104)上；
●安装在所述至少一个电子芯片(102)上方的第二散热体(106)；
●布置在所述至少一个电子芯片(110)与所述第二散热体(106)之间的至少一个间隔体(126)；
●将所述至少一个电子芯片(102)与所述至少一个间隔体(126)连接的第二互连结构(172)；
●将所述至少一个间隔体(126)与所述第二散热体(106)连接的第三互连结构(174)；
●其中，所述第一互连结构(170)、所述第二互连结构(172)和所述第三互连结构(174)中的一个相比所述第一互连结构(170)、所述第二互连结构(172)和所述第三互连结构(174)中的至少其它一个具有不同的熔化温度。
18.根据权利要求17所述的封装体(100)，其中，所述封装体(100)包括包封材料(108)，所述包封材料(108)包封所述至少一个电子芯片(102)的至少一部分、所述至少一个间隔体(126)的至少一部分、所述第一散热体(104)的一部分和所述第二散热体(106)的一部分。
19.一种车辆(122)，包括根据权利要求1至18中任一项所述的封装体(100)。
20.一种制造封装体(100)的方法，其中，所述方法包括：
●通过第一互连结构(170)将至少一个电子芯片(102)安装在第一散热体(104)上；
●通过第二互连结构(172)将第二散热体(106)安装在所述至少一个电子芯片(102)上或上方；
●将所述第一互连结构(170)配置成相比所述第二互连结构(172)具有不同的熔化温度。
21.根据权利要求20所述的方法，其中，所述方法包括通过包封材料(108)包封所述至少一个电子芯片(102)的至少一部分、所述第一散热体(104)的一部分和所述第二散热体(106)的一部分。
22.一种制造封装体(100)的方法，其中，所述方法包括：
●通过第一互连结构(170)将至少一个电子芯片(102)安装在第一散热体(104)上；
●通过第二互连结构(172)将至少一个间隔体(126)安装在所述至少一个电子芯片102上；
●通过第三互连结构(174)将第二散热体(106)安装在所述间隔体(126)上；
●其中，所述第一互连结构(170)、所述第二互连结构(172)和所述第三互连结构(174)中的一个与所述第一互连结构(170)、所述第二互连结构(172)和所述第三互连结构(174)中的其它两个具有不同的熔化温度。
23.根据权利要求22所述的方法，其中，在将所述至少一个间隔体(126)安装在所述至少一个电子芯片102上之前，所述第二散热体(106)安装在所述至少一个间隔体(126)上。
24.根据权利要求23所述的方法，其中，在将所述至少一个间隔体(126)安装在所述至少一个电子芯片102上之前，所述至少一个电子芯片102安装在所述第一散热体(104)上。
25.根据权利要求22至24中任一项所述的方法，其中，形成所述第一互连结构(170)、所述第二互连结构(172)和所述第三互连结构(174)中的最后一个是在低到足以防止其它两个先前形成的互连结构(170、172、174)在形成最后一个互连结构(170、172、174)期间熔化或再熔化的互连温度下执行的。
26.一种使用根据权利要求1至17中任一项所述的封装体(100)的方法，所述封装体(100)用于汽车应用，特别是作为用于至少部分电驱动的车辆(122)的逆变器电路。
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