CN108054099A - 半导体功率器件的制作方法 - Google Patents
半导体功率器件的制作方法 Download PDFInfo
- Publication number
- CN108054099A CN108054099A CN201711325070.4A CN201711325070A CN108054099A CN 108054099 A CN108054099 A CN 108054099A CN 201711325070 A CN201711325070 A CN 201711325070A CN 108054099 A CN108054099 A CN 108054099A
- Authority
- CN
- China
- Prior art keywords
- layer
- polysilicon
- polycrystalline silicon
- thin layer
- carried out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 122
- 229920005591 polysilicon Polymers 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 36
- 238000002347 injection Methods 0.000 claims abstract description 36
- 239000007924 injection Substances 0.000 claims abstract description 36
- 230000003647 oxidation Effects 0.000 claims abstract description 30
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 30
- 238000000407 epitaxy Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 10
- -1 Boron ion Chemical class 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 230000006378 damage Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000002146 bilateral effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 206010016256 fatigue Diseases 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711325070.4A CN108054099B (zh) | 2017-12-12 | 2017-12-12 | 半导体功率器件的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711325070.4A CN108054099B (zh) | 2017-12-12 | 2017-12-12 | 半导体功率器件的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108054099A true CN108054099A (zh) | 2018-05-18 |
CN108054099B CN108054099B (zh) | 2020-08-28 |
Family
ID=62132327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711325070.4A Expired - Fee Related CN108054099B (zh) | 2017-12-12 | 2017-12-12 | 半导体功率器件的制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108054099B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109119478A (zh) * | 2018-09-04 | 2019-01-01 | 深圳市南硕明泰科技有限公司 | 一种芯片及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248627A (en) * | 1992-03-20 | 1993-09-28 | Siliconix Incorporated | Threshold adjustment in fabricating vertical dmos devices |
US8476697B1 (en) * | 2003-04-11 | 2013-07-02 | Purdue Research Foundation | Short-channel silicon carbide power MOSFET |
CN105470297A (zh) * | 2014-09-10 | 2016-04-06 | 北大方正集团有限公司 | 一种vdmos器件及其制作方法 |
-
2017
- 2017-12-12 CN CN201711325070.4A patent/CN108054099B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248627A (en) * | 1992-03-20 | 1993-09-28 | Siliconix Incorporated | Threshold adjustment in fabricating vertical dmos devices |
US8476697B1 (en) * | 2003-04-11 | 2013-07-02 | Purdue Research Foundation | Short-channel silicon carbide power MOSFET |
CN105470297A (zh) * | 2014-09-10 | 2016-04-06 | 北大方正集团有限公司 | 一种vdmos器件及其制作方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109119478A (zh) * | 2018-09-04 | 2019-01-01 | 深圳市南硕明泰科技有限公司 | 一种芯片及其制作方法 |
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Publication number | Publication date |
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CN108054099B (zh) | 2020-08-28 |
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TA01 | Transfer of patent application right | ||
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Effective date of registration: 20200805 Address after: 210000 Kechuang building, Futian Road, Zhetang street, Lishui Economic Development Zone, Nanjing City, Jiangsu Province Applicant after: Nanjing Lishui hi tech Venture Capital Management Co.,Ltd. Address before: 518000 Electronic Commerce Incubation Base of Tenglong Road Gold Rush, Longhua Street, Longhua New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Meliao Technology Transfer Center Co.,Ltd. |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210114 Address after: 211299 science and technology innovation center, No.5 Shiqiu Avenue, Shiqiu street, Lishui District, Nanjing City, Jiangsu Province Patentee after: Jiangsu Qinglian Optoelectronic Technology Research Institute Co., Ltd Address before: 210000 Kechuang building, Futian Road, Zhetang street, Lishui Economic Development Zone, Nanjing, Jiangsu Province Patentee before: Nanjing Lishui hi tech Venture Capital Management Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200828 Termination date: 20201212 |