CN108039411A - 一种钙钛矿型太阳能电池及其修饰层制备方法 - Google Patents
一种钙钛矿型太阳能电池及其修饰层制备方法 Download PDFInfo
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- CN108039411A CN108039411A CN201711281967.1A CN201711281967A CN108039411A CN 108039411 A CN108039411 A CN 108039411A CN 201711281967 A CN201711281967 A CN 201711281967A CN 108039411 A CN108039411 A CN 108039411A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical class CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 32
- 230000005540 biological transmission Effects 0.000 claims abstract description 17
- 239000010936 titanium Substances 0.000 claims abstract description 14
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 11
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims abstract description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims abstract description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 32
- 230000004048 modification Effects 0.000 claims description 25
- 238000012986 modification Methods 0.000 claims description 25
- 239000000243 solution Substances 0.000 claims description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 239000007983 Tris buffer Substances 0.000 claims description 4
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 claims description 4
- 239000000706 filtrate Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical group [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 claims description 4
- 229940069446 magnesium acetate Drugs 0.000 claims description 4
- 235000011285 magnesium acetate Nutrition 0.000 claims description 4
- 239000011654 magnesium acetate Substances 0.000 claims description 4
- 229940071125 manganese acetate Drugs 0.000 claims description 4
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 4
- 238000000280 densification Methods 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 235000021419 vinegar Nutrition 0.000 claims 1
- 239000000052 vinegar Substances 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 7
- 238000011160 research Methods 0.000 abstract description 4
- 238000011017 operating method Methods 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- SZKXDURZBIICCF-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical group [Co].CC(=O)CC(C)=O SZKXDURZBIICCF-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000005622 photoelectricity Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229940078494 nickel acetate Drugs 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 acetyl acetone salt Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002169 ethanolamines Chemical class 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
JSC/mA cm-2 | VOC/V | PCE | FF | |
对比例1 | 19.60 | 0.92 | 13.12% | 0.72 |
实施例1 | 21.74 | 0.97 | 16.41% | 0.77 |
实施例2 | 22.16 | 0.95 | 15.92% | 0.75 |
实施例3 | 21.16 | 0.95 | 16.03% | 0.79 |
实施例4 | 22.27 | 0.98 | 17.29% | 0.78 |
实施例5 | 21.50 | 0.98 | 16.45% | 0.77 |
实施例6 | 21.58 | 1.00 | 16.43% | 0.75 |
实施例7 | 21.99 | 0.98 | 17.16% | 0.78 |
实施例8 | 21.58 | 0.94 | 15.57% | 0.76 |
Claims (9)
Priority Applications (1)
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CN201711281967.1A CN108039411B (zh) | 2017-12-07 | 2017-12-07 | 一种钙钛矿型太阳能电池及其修饰层制备方法 |
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CN201711281967.1A CN108039411B (zh) | 2017-12-07 | 2017-12-07 | 一种钙钛矿型太阳能电池及其修饰层制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN108039411A true CN108039411A (zh) | 2018-05-15 |
CN108039411B CN108039411B (zh) | 2021-06-11 |
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CN201711281967.1A Active CN108039411B (zh) | 2017-12-07 | 2017-12-07 | 一种钙钛矿型太阳能电池及其修饰层制备方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109346604A (zh) * | 2018-09-19 | 2019-02-15 | 浙江师范大学 | 一种钙钛矿太阳能电池 |
CN110212093A (zh) * | 2019-04-18 | 2019-09-06 | 上海黎元新能源科技有限公司 | 一种太阳能电池及其制备方法 |
CN110429180A (zh) * | 2019-07-16 | 2019-11-08 | 上海黎元新能源科技有限公司 | 一种太阳能电池及其制备方法 |
CN111223990A (zh) * | 2019-11-29 | 2020-06-02 | 西南石油大学 | 含碱金属卤化物空穴修饰层的反型钙钛矿太阳能电池及制备方法 |
CN111435705A (zh) * | 2019-06-12 | 2020-07-21 | 杭州纤纳光电科技有限公司 | 一种修复剂及其修复方法和制备光电薄膜的方法 |
CN112382731A (zh) * | 2020-11-12 | 2021-02-19 | 华北电力大学 | 一种钙钛矿发光二极管及其制作方法 |
CN113193128A (zh) * | 2021-05-24 | 2021-07-30 | 电子科技大学 | 一种具有界面修饰层的钙钛矿太阳能电池及其制备方法 |
CN114388697A (zh) * | 2021-11-04 | 2022-04-22 | 上海黎元新能源科技有限公司 | 一种空穴传输层前驱体溶液及其制备方法与应用 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103855307A (zh) * | 2014-03-14 | 2014-06-11 | 国家纳米科学中心 | 一种钙钛矿太阳电池及其制备方法 |
WO2014165830A2 (en) * | 2013-04-04 | 2014-10-09 | The Regents Of The University Of California | Electrochemical solar cells |
CN105070834A (zh) * | 2015-07-28 | 2015-11-18 | 华中科技大学 | 一种基于掺杂型NiO空穴传输层的钙钛矿太阳能电池及其制备方法 |
CN105070841A (zh) * | 2015-07-21 | 2015-11-18 | 苏州大学 | 一种钙钛矿太阳能电池的制备方法 |
US20170149004A1 (en) * | 2015-11-20 | 2017-05-25 | Gachon University Of Industry-Academic Cooperation Foundation | Method for manufacturing thin film including nickel oxide nanoparticle and solar cell having the same |
CN106960908A (zh) * | 2017-03-23 | 2017-07-18 | 华南师范大学 | 一种阴极修饰型平面钙钛矿太阳能电池及其制备方法 |
US20170250030A1 (en) * | 2016-02-25 | 2017-08-31 | University Of Louisville Research Foundation, Inc. | Methods for forming a perovskite solar cell |
-
2017
- 2017-12-07 CN CN201711281967.1A patent/CN108039411B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014165830A2 (en) * | 2013-04-04 | 2014-10-09 | The Regents Of The University Of California | Electrochemical solar cells |
CN103855307A (zh) * | 2014-03-14 | 2014-06-11 | 国家纳米科学中心 | 一种钙钛矿太阳电池及其制备方法 |
CN105070841A (zh) * | 2015-07-21 | 2015-11-18 | 苏州大学 | 一种钙钛矿太阳能电池的制备方法 |
CN105070834A (zh) * | 2015-07-28 | 2015-11-18 | 华中科技大学 | 一种基于掺杂型NiO空穴传输层的钙钛矿太阳能电池及其制备方法 |
US20170149004A1 (en) * | 2015-11-20 | 2017-05-25 | Gachon University Of Industry-Academic Cooperation Foundation | Method for manufacturing thin film including nickel oxide nanoparticle and solar cell having the same |
US20170250030A1 (en) * | 2016-02-25 | 2017-08-31 | University Of Louisville Research Foundation, Inc. | Methods for forming a perovskite solar cell |
CN106960908A (zh) * | 2017-03-23 | 2017-07-18 | 华南师范大学 | 一种阴极修饰型平面钙钛矿太阳能电池及其制备方法 |
Non-Patent Citations (2)
Title |
---|
WEI CHEN等: ""Metal Acetylacetonate series in interface engineering for full low temperature-processed,high-performance,and stable planar perovskite solar cells with conversion efficiency over 16% on 1cm2 scale"", 《ADVANCED MATERIALS》 * |
YONGZHEN WU等: ""thermally stable MAPbI3 perovslite solar cells with efficiency of 19.19% and area over 1cm2 achieved by additive enginerring"", 《ADVANCED MATERIALS》 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109346604A (zh) * | 2018-09-19 | 2019-02-15 | 浙江师范大学 | 一种钙钛矿太阳能电池 |
CN110212093A (zh) * | 2019-04-18 | 2019-09-06 | 上海黎元新能源科技有限公司 | 一种太阳能电池及其制备方法 |
CN111435705A (zh) * | 2019-06-12 | 2020-07-21 | 杭州纤纳光电科技有限公司 | 一种修复剂及其修复方法和制备光电薄膜的方法 |
CN110429180A (zh) * | 2019-07-16 | 2019-11-08 | 上海黎元新能源科技有限公司 | 一种太阳能电池及其制备方法 |
CN111223990A (zh) * | 2019-11-29 | 2020-06-02 | 西南石油大学 | 含碱金属卤化物空穴修饰层的反型钙钛矿太阳能电池及制备方法 |
CN112382731A (zh) * | 2020-11-12 | 2021-02-19 | 华北电力大学 | 一种钙钛矿发光二极管及其制作方法 |
CN112382731B (zh) * | 2020-11-12 | 2022-01-28 | 华北电力大学 | 一种钙钛矿发光二极管及其制作方法 |
CN113193128A (zh) * | 2021-05-24 | 2021-07-30 | 电子科技大学 | 一种具有界面修饰层的钙钛矿太阳能电池及其制备方法 |
CN114388697A (zh) * | 2021-11-04 | 2022-04-22 | 上海黎元新能源科技有限公司 | 一种空穴传输层前驱体溶液及其制备方法与应用 |
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