CN108028263B - 用于制造辐射探测器的方法和辐射探测器 - Google Patents

用于制造辐射探测器的方法和辐射探测器 Download PDF

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Publication number
CN108028263B
CN108028263B CN201680053905.2A CN201680053905A CN108028263B CN 108028263 B CN108028263 B CN 108028263B CN 201680053905 A CN201680053905 A CN 201680053905A CN 108028263 B CN108028263 B CN 108028263B
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layer
detector
inorganic
perovskite material
seeding
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CN108028263A (zh
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H·利夫卡
J·M·E·贝肯
R·库霍恩
P·A·范哈尔
H·K·维乔雷克
H·胡梅尔
C·R·龙达
M·西蒙
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Koninklijke Philips NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2023—Selection of materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/36—Devices specially adapted for detecting X-ray radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Luminescent Compositions (AREA)
CN201680053905.2A 2015-09-17 2016-09-16 用于制造辐射探测器的方法和辐射探测器 Active CN108028263B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP15185586.3 2015-09-17
EP15185586 2015-09-17
PCT/EP2016/072065 WO2017046390A1 (en) 2015-09-17 2016-09-16 Method for producing a radiation detector and radiation detector

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CN108028263A CN108028263A (zh) 2018-05-11
CN108028263B true CN108028263B (zh) 2022-10-21

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US (1) US10573690B2 (https=)
EP (1) EP3350836B1 (https=)
JP (1) JP6960907B2 (https=)
CN (1) CN108028263B (https=)
WO (1) WO2017046390A1 (https=)

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US11940577B1 (en) * 2017-10-19 2024-03-26 Radiation Monitoring Devices, Inc. Wide bandgap semiconductor radiation detectors
JP6975079B2 (ja) * 2018-03-15 2021-12-01 株式会社東芝 放射線検出器
CN108649127A (zh) * 2018-05-17 2018-10-12 北京大学 一种基于种子层辅助生长的连续多层钙钛矿薄膜制备方法
FI131400B1 (en) * 2018-06-26 2025-04-01 Univ Kyoto Radiation detector and method for producing a radiation detector
US11824132B2 (en) 2019-04-29 2023-11-21 King Abdullah University Of Science And Technology Indirect bandgap, perovskite-based X-ray detector and method
JP7542224B2 (ja) * 2019-05-29 2024-08-30 パナソニックＩｐマネジメント株式会社 光電変換膜およびそれを用いた太陽電池、ならびに光電変換膜の製造方法
CN110609313B (zh) * 2019-09-30 2024-12-20 南华大学 轻便式γ辐射定向探测器
EP3799787A1 (en) 2019-10-01 2021-04-07 Koninklijke Philips N.V. Detector for a dark-field; phase-contrast and attenuation interferometric imaging system
EP3863059B1 (de) * 2020-02-04 2024-07-31 Siemens Healthineers AG Perowskit-basierte detektoren mit erhöhter adhäsion
EP3863054A1 (de) 2020-02-04 2021-08-11 Siemens Healthcare GmbH Multiple spektrale detektoren mittels strukturierter perowskite
WO2022030154A1 (ja) * 2020-08-06 2022-02-10 パナソニックＩｐマネジメント株式会社 電離放射線変換デバイスおよび電離放射線の検出方法
CN111965689B (zh) * 2020-08-12 2021-04-09 中国科学院国家空间科学中心 一种用于中性原子分析的测量装置
CN111948696B (zh) * 2020-08-13 2023-04-18 京东方科技集团股份有限公司 射线探测器基板、射线探测器及射线探测方法
FR3116153B1 (fr) 2020-11-09 2026-04-10 Commissariat Energie Atomique Procédé de fabrication orientée d’un cristal de conversion par voie liquide
WO2022102126A1 (ja) * 2020-11-16 2022-05-19 株式会社 東芝 光電変換素子およびその製造方法
EP4068363B1 (en) * 2021-03-30 2023-06-07 Siemens Healthcare GmbH Radiation detector with butted absorber tiles without dead areas
US20220344395A1 (en) * 2021-04-22 2022-10-27 Quantum-Si Incorporated Photodetector circuit with indirect drain coupling
CN113219518A (zh) * 2021-05-08 2021-08-06 西北核技术研究所 一种基于富氢钙钛矿闪烁体的辐射探测装置及探测方法
CN113433580B (zh) * 2021-06-25 2023-03-10 中国科学技术大学 气体探测器制作方法、气体探测器及射线探测装置
EP4270512A1 (en) 2022-04-25 2023-11-01 Fundacja Saule Research Institute A perovskite structure, a photovoltaic cell, and a method for preparation thereof
CN114937708B (zh) * 2022-05-25 2024-04-16 华中科技大学 一种全钙钛矿x射线间接探测器及其制备方法
JP2023178687A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム
TWI831509B (zh) 2022-12-08 2024-02-01 財團法人工業技術研究院 鈣鈦礦厚膜、其製備方法以及包含其之輻射偵測器
FR3163463A1 (fr) * 2024-06-18 2025-12-19 Commissariat à l'Energie Atomique et aux Energies Alternatives Dispositif détecteur à faible courant d’obscurité pour la détection des rayonnements ionisants

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CN108028263A (zh) 2018-05-11
US20180277608A1 (en) 2018-09-27
JP2018535537A (ja) 2018-11-29
US10573690B2 (en) 2020-02-25
EP3350836B1 (en) 2021-11-10
WO2017046390A1 (en) 2017-03-23
JP6960907B2 (ja) 2021-11-05
EP3350836A1 (en) 2018-07-25

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