JP6960907B2 - 放射線検出器及び放射線検出器の製造方法 - Google Patents
放射線検出器及び放射線検出器の製造方法 Download PDFInfo
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- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/36—Devices specially adapted for detecting X-ray radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- H—ELECTRICITY
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
デバイスは、電極によって、又は変換材料自体において画素に構成されることができる。デバイスは、何れかの形状及びサイズを有することができる。
Claims (15)
- 直接変換材料として、及び/又は検出器層におけるシンチレータ材料として第1の無機 - 有機ハライドペロブスカイト材料を含む、電離放射線のための放射線検出器を製造する方法であって、
前記第1の無機 - 有機ハライドペロブスカイト材料と異なる第2の無機 - 有機ハライドペロブスカイト材料を含むシード層を設けるシーディングステップと、
前記シード層上の溶液から前記第1の無機 - 有機ハライドペロブスカイト材料を成長させることによって前記検出器層を形成する層成長ステップと
を有する、方法。 - 前記第1及び第2の無機 - 有機ハライドペロブスカイト材料は、メチルアンモニウム金属ハロゲン化物及び/又はホルムアミジニウム金属ハロゲン化物からのみなるか又はそれらを含む、請求項1に記載の方法。
- 前記金属ハロゲン化物が鉛ハロゲン化物又は錫ハロゲン化物である、請求項2に記載の方法。
- 前記第1の無機 - 有機ハライドペロブスカイト材料はヨウ化物からのみなるか又はヨウ化物を有し、前記第2の無機 - 有機ハライドペロブスカイト材料は臭化物からのみなるか又は臭化物を有する、請求項3に記載の方法。
- 前記溶液は、金属酢酸塩/ヨウ化水素溶液とメチルアミン/ヨウ化水素溶液との混合物である、請求項4に記載の方法。
- 前記層成長ステップにおいて、発光材料が前記検出器層に含まれる、請求項1に記載の方法。
- 前記発光材料は発光量子ドット及び/又は蛍光体粒子を含む、請求項6に記載の方法。
- 前記層成長ステップは、前記検出器層が10μm又はそれより厚い厚さを有するように提供される、請求項1に記載の方法。
- 前記検出器層上に平坦化電荷ブロック層を設ける平坦化ステップをさらに有する、請求項1に記載の方法。
- 前記第2の無機 - 有機ハライドペロブスカイト材料の局所的な堆積によって、好ましくはインクジェット、スロットダイ及び/又はスクリーン印刷によって、前記シード層の構造を提供する提供ステップを更に有する、請求項1に記載の方法。
- 前記提供ステップに先行して、前記シード層が堆積されるべき基板の表面を粗面化する粗面化ステップを更に有する、請求項10に記載の方法。
- 電離放射線を検出する放射線検出器であって、
第1の無機 - 有機ハライドペロブスカイト材料と異なる第2の無機 - 有機ハライドペロブスカイト材料を含むシード層と、
前記シード層上に形成された前記第1の無機 - 有機ハライドペロブスカイト材料を含む検出器層と、
を有する放射線検出器。 - (1)基板、構造化される複数の下部電極、前記検出器層及び上部電極がこの順に配置され、前記下部電極の各々の上に、前記シード層の部分が設けられている、構成、又は
(2)基板、構造化される複数の電極、及び前記検出器層がこの順に配置され、前記電極の各々の上に、前記シード層の部分が設けられ、前記電極がアノード及びカソードを含む、構成、
のいずれかの構成を有する、請求項12に記載の放射線検出器。 - 前記放射線検出器が前記(1)の構成を有する場合、前記下部電極と前記検出器層との間に電荷ブロック層を有するか、又は前記検出器層と前記上部電極との間に導電層又は電荷ブロック層を有し、
前記放射線検出器が前記(2)の構成を有する場合、前記アノード及び前記カソードを含む前記電極と前記検出器層との間に電荷ブロック層を有する、請求項13に記載の放射線検出器。 - 複数の光検出器をさらに有し、
前記放射線検出器が前記(1)の構成を有する場合、前記検出器層と前記複数の光検出器との間に、前記下部電極が挟まれるように構成され、
前記放射線検出器が前記(2)の構成を有する場合、前記検出器層と前記複数の光検出器との間に、前記アノード及び前記カソードを含む前記電極が挟まれるように構成され、
前記光検出器は、入射放射線によって引き起こされる前記検出器層の材料の発光を検出するように構成される、請求項13に記載の放射線検出器。
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EP15185586 | 2015-09-17 | ||
EP15185586.3 | 2015-09-17 | ||
PCT/EP2016/072065 WO2017046390A1 (en) | 2015-09-17 | 2016-09-16 | Method for producing a radiation detector and radiation detector |
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EP (1) | EP3350836B1 (ja) |
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EP3232229A1 (en) * | 2016-04-13 | 2017-10-18 | Nokia Technologies Oy | Apparatus for sensing radiation |
CN109863599A (zh) * | 2016-11-30 | 2019-06-07 | 纽约州州立大学研究基金会 | 混合有源矩阵平板检测器系统和方法 |
US11940577B1 (en) * | 2017-10-19 | 2024-03-26 | Radiation Monitoring Devices, Inc. | Wide bandgap semiconductor radiation detectors |
JP6975079B2 (ja) * | 2018-03-15 | 2021-12-01 | 株式会社東芝 | 放射線検出器 |
CN108649127A (zh) * | 2018-05-17 | 2018-10-12 | 北京大学 | 一种基于种子层辅助生长的连续多层钙钛矿薄膜制备方法 |
CN112313543A (zh) * | 2018-06-26 | 2021-02-02 | 国立大学法人京都大学 | 放射线检测器、及放射线检测器的制造方法 |
US11824132B2 (en) | 2019-04-29 | 2023-11-21 | King Abdullah University Of Science And Technology | Indirect bandgap, perovskite-based X-ray detector and method |
WO2020240947A1 (ja) * | 2019-05-29 | 2020-12-03 | パナソニックIpマネジメント株式会社 | 光電変換膜およびそれを用いた太陽電池、ならびに光電変換膜の製造方法 |
EP3863054A1 (de) | 2020-02-04 | 2021-08-11 | Siemens Healthcare GmbH | Multiple spektrale detektoren mittels strukturierter perowskite |
EP3863059A1 (de) * | 2020-02-04 | 2021-08-11 | Siemens Healthcare GmbH | Perowskit-basierte detektoren mit erhöhter adhäsion |
EP4194903A4 (en) * | 2020-08-06 | 2024-01-17 | Panasonic Ip Man Co Ltd | IONIZING RADIATION CONVERSION DEVICE AND IONIZING RADIATION DETECTION METHOD |
CN111965689B (zh) * | 2020-08-12 | 2021-04-09 | 中国科学院国家空间科学中心 | 一种用于中性原子分析的测量装置 |
CN111948696B (zh) * | 2020-08-13 | 2023-04-18 | 京东方科技集团股份有限公司 | 射线探测器基板、射线探测器及射线探测方法 |
FR3116153A1 (fr) | 2020-11-09 | 2022-05-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication orientée d’un cristal de conversion par voie liquide |
CN113219518A (zh) * | 2021-05-08 | 2021-08-06 | 西北核技术研究所 | 一种基于富氢钙钛矿闪烁体的辐射探测装置及探测方法 |
CN113433580B (zh) * | 2021-06-25 | 2023-03-10 | 中国科学技术大学 | 气体探测器制作方法、气体探测器及射线探测装置 |
EP4270512A1 (en) | 2022-04-25 | 2023-11-01 | Fundacja Saule Research Institute | A perovskite structure, a photovoltaic cell, and a method for preparation thereof |
CN114937708B (zh) * | 2022-05-25 | 2024-04-16 | 华中科技大学 | 一种全钙钛矿x射线间接探测器及其制备方法 |
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