WO2017046390A1 - Method for producing a radiation detector and radiation detector - Google Patents

Method for producing a radiation detector and radiation detector Download PDF

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Publication number
WO2017046390A1
WO2017046390A1 PCT/EP2016/072065 EP2016072065W WO2017046390A1 WO 2017046390 A1 WO2017046390 A1 WO 2017046390A1 EP 2016072065 W EP2016072065 W EP 2016072065W WO 2017046390 A1 WO2017046390 A1 WO 2017046390A1
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WO
WIPO (PCT)
Prior art keywords
layer
detector
inorganic
radiation
seeding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2016/072065
Other languages
English (en)
French (fr)
Inventor
Herbert Lifka
Joanna Maria Elisabeth Baken
Reinder Coehoorn
Paulus Albertus Van Hal
Herfried Karl Wieczorek
Helga Hummel
Cornelis Reinder Ronda
Matthias Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Priority to JP2018512400A priority Critical patent/JP6960907B2/ja
Priority to EP16767258.3A priority patent/EP3350836B1/en
Priority to CN201680053905.2A priority patent/CN108028263B/zh
Priority to US15/760,645 priority patent/US10573690B2/en
Publication of WO2017046390A1 publication Critical patent/WO2017046390A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2023—Selection of materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/36—Devices specially adapted for detecting X-ray radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing a radiation detector for ionizing radiation including a first inorganic-organic halide Perovskite material as a direct converter material and/or as a scintillator material in a detector layer and to a radiation detector comprising a detector layer produced by means of the steps of the method.
  • inorganic-organic halide Perovskites have been investigated for several applications.
  • One of them is scintillators, see, for example, "Quantum confinement for large light output from pure semiconducting scintillators" by K.Shibuya et al. (Applied Physics Letters, vol. 84, no. 22, p. 4370-4372).
  • Such systems have also been investigated for EL-light-emission and photovoltaics (PV) with very high efficiencies, see, for example, "Organic-inorganic hetero structure electroluminescent device using a layered perovskite semiconductor (C 6 H 5 C 2 H 4 NH 3 ) 2 Pbl 4 " by M. Era et al. (Appl.
  • inorganic-organic halide Perovskites are X- ray detectors.
  • X-ray detectors In order to fabricate an X-ray detector based on the inorganic-organic halide Perovskites, a comparatively thick layer of the Perovskite appears to be needed. Growing single crystals is known, however it is not yet known how to efficiently grow a thick (poly) crystalline layer on a substrate.
  • a structured set of separate detectors is required. This can be fabricated by structuring the bottom electrode, depositing a Perovskite layer and depositing a cathode on top. Apart from the bottom electrode structuring, the process is quite similar to the Perovskite-PV process. However, for PV only Perovskite layers of around 300 nm have to be deposited. This can be done by spin-coating or physical or chemical vapor deposition. For layers above 10 ⁇ thick this is not possible and/or affordable.
  • Direct converters like amorphous selenium (a-Se), lead oxide (PbO), or cadmium zinc telluride (CZT) have been previously developed for X-ray imaging or computed tomography. Such approaches are however limited in X-ray absorption and density (a-Se), availability (PbO), or have a high cost price (CZT). It is therefore desirable to have a direct converter material with high absorption at a moderate cost price, which is provided by using inorganic-organic halide Perovskite materials.
  • the present inventions allows for layers that can be made quite thick with only moderate electric fields needed due to good charge mobility properties.
  • the solution is a mixture of a metal acetate / hydrogen iodide solution and a methylamine / hydrogen iodide solution.
  • the Perovskite material in the detector layer may absorb radiation, e.g. X-rays, and may then transfer a part of the energy to the light emission material, which will then preferably emit light having at least a wavelength outside the absorption band of the
  • the method further comprises a planarizing step of providing a planarizing charge blocking layer on the detector layer.
  • Fig. 2 shows a schematic partial diagram of a radiation detector in accordance with another embodiment of the invention
  • the basic structure includes a substrate 1 with structured bottom electrodes 2 on it. On top of the bottom electrode 2 an electron blocking layer (not shown) might be present. On top of the arrangement of substrate 1 and bottom electrodes 2 a halide Perovskite layer 4 is placed, with a seeding layer 3 provided on the bottom electrodes 2.
  • This layer 4 might be thin (100 nm -100 ⁇ ) for mammography, thicker (100 - 2000 ⁇ ) for general X- ray and CT and quite thick (1 - 20 mm) for SPECT or PET.
  • the top electrode 5 is deposited.
  • the top electrode 5 might contain an electron injection layer (not shown).
  • An advantage of the inorganic-organic halide Perovskite materials is that the energy gap and the mobility can be easily adjusted by varying the metals, halogen atoms and/or the organic groups as well as layer morphologies and multilayer device structures.
  • substrate 11, bottom electrode 12, seeding layer 13, Perovskite layer 14 and top electrode 15 basically corresponds to the corresponding arrangement shown in Fig. 1.
  • the present invention may be implemented also by using organic substrates. If the organic layers are not conductive, this crystal growth is then more suited for scintillators.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Luminescent Compositions (AREA)
PCT/EP2016/072065 2015-09-17 2016-09-16 Method for producing a radiation detector and radiation detector Ceased WO2017046390A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018512400A JP6960907B2 (ja) 2015-09-17 2016-09-16 放射線検出器及び放射線検出器の製造方法
EP16767258.3A EP3350836B1 (en) 2015-09-17 2016-09-16 Method for producing a radiation detector and radiation detector
CN201680053905.2A CN108028263B (zh) 2015-09-17 2016-09-16 用于制造辐射探测器的方法和辐射探测器
US15/760,645 US10573690B2 (en) 2015-09-17 2016-09-16 Method for producing a radiation detector and radiation detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15185586.3 2015-09-17
EP15185586 2015-09-17

Publications (1)

Publication Number Publication Date
WO2017046390A1 true WO2017046390A1 (en) 2017-03-23

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PCT/EP2016/072065 Ceased WO2017046390A1 (en) 2015-09-17 2016-09-16 Method for producing a radiation detector and radiation detector

Country Status (5)

Country Link
US (1) US10573690B2 (https=)
EP (1) EP3350836B1 (https=)
JP (1) JP6960907B2 (https=)
CN (1) CN108028263B (https=)
WO (1) WO2017046390A1 (https=)

Cited By (3)

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JP2019158751A (ja) * 2018-03-15 2019-09-19 株式会社東芝 放射線検出器及びその製造方法
WO2020003603A1 (ja) * 2018-06-26 2020-01-02 国立大学法人京都大学 放射線検出器、及び放射線検出器の製造方法
WO2022096827A1 (fr) 2020-11-09 2022-05-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication orientée d'un cristal de conversion par voie liquide

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EP3232229A1 (en) * 2016-04-13 2017-10-18 Nokia Technologies Oy Apparatus for sensing radiation
CN109863599B (zh) * 2016-11-30 2024-06-18 纽约州州立大学研究基金会 混合有源矩阵平板检测器系统和方法
US11940577B1 (en) * 2017-10-19 2024-03-26 Radiation Monitoring Devices, Inc. Wide bandgap semiconductor radiation detectors
CN108649127A (zh) * 2018-05-17 2018-10-12 北京大学 一种基于种子层辅助生长的连续多层钙钛矿薄膜制备方法
US11824132B2 (en) 2019-04-29 2023-11-21 King Abdullah University Of Science And Technology Indirect bandgap, perovskite-based X-ray detector and method
JP7542224B2 (ja) * 2019-05-29 2024-08-30 パナソニックＩｐマネジメント株式会社 光電変換膜およびそれを用いた太陽電池、ならびに光電変換膜の製造方法
CN110609313B (zh) * 2019-09-30 2024-12-20 南华大学 轻便式γ辐射定向探测器
EP3799787A1 (en) 2019-10-01 2021-04-07 Koninklijke Philips N.V. Detector for a dark-field; phase-contrast and attenuation interferometric imaging system
EP3863059B1 (de) * 2020-02-04 2024-07-31 Siemens Healthineers AG Perowskit-basierte detektoren mit erhöhter adhäsion
EP3863054A1 (de) 2020-02-04 2021-08-11 Siemens Healthcare GmbH Multiple spektrale detektoren mittels strukturierter perowskite
WO2022030154A1 (ja) * 2020-08-06 2022-02-10 パナソニックＩｐマネジメント株式会社 電離放射線変換デバイスおよび電離放射線の検出方法
CN111965689B (zh) * 2020-08-12 2021-04-09 中国科学院国家空间科学中心 一种用于中性原子分析的测量装置
CN111948696B (zh) * 2020-08-13 2023-04-18 京东方科技集团股份有限公司 射线探测器基板、射线探测器及射线探测方法
WO2022102126A1 (ja) * 2020-11-16 2022-05-19 株式会社 東芝 光電変換素子およびその製造方法
EP4068363B1 (en) * 2021-03-30 2023-06-07 Siemens Healthcare GmbH Radiation detector with butted absorber tiles without dead areas
US20220344395A1 (en) * 2021-04-22 2022-10-27 Quantum-Si Incorporated Photodetector circuit with indirect drain coupling
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CN113433580B (zh) * 2021-06-25 2023-03-10 中国科学技术大学 气体探测器制作方法、气体探测器及射线探测装置
EP4270512A1 (en) 2022-04-25 2023-11-01 Fundacja Saule Research Institute A perovskite structure, a photovoltaic cell, and a method for preparation thereof
CN114937708B (zh) * 2022-05-25 2024-04-16 华中科技大学 一种全钙钛矿x射线间接探测器及其制备方法
JP2023178687A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム
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JP2019158751A (ja) * 2018-03-15 2019-09-19 株式会社東芝 放射線検出器及びその製造方法
WO2020003603A1 (ja) * 2018-06-26 2020-01-02 国立大学法人京都大学 放射線検出器、及び放射線検出器の製造方法
JPWO2020003603A1 (ja) * 2018-06-26 2021-07-08 国立大学法人京都大学 放射線検出器、及び放射線検出器の製造方法
JP7264402B2 (ja) 2018-06-26 2023-04-25 国立大学法人京都大学 放射線検出器、及び放射線検出器の製造方法
JP2023076629A (ja) * 2018-06-26 2023-06-01 国立大学法人京都大学 放射線検出器、及び放射線検出器の製造方法
TWI813632B (zh) * 2018-06-26 2023-09-01 國立大學法人京都大學 放射線檢測器、及放射線檢測器之製造方法
JP7446592B2 (ja) 2018-06-26 2024-03-11 国立大学法人京都大学 放射線検出器、及び放射線検出器の製造方法
US12140715B2 (en) 2018-06-26 2024-11-12 Kyoto University Radiation detector and method for manufacturing radiation detector
WO2022096827A1 (fr) 2020-11-09 2022-05-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication orientée d'un cristal de conversion par voie liquide
FR3116153A1 (fr) 2020-11-09 2022-05-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication orientée d’un cristal de conversion par voie liquide

Also Published As

Publication number Publication date
CN108028263A (zh) 2018-05-11
US20180277608A1 (en) 2018-09-27
JP2018535537A (ja) 2018-11-29
US10573690B2 (en) 2020-02-25
EP3350836B1 (en) 2021-11-10
JP6960907B2 (ja) 2021-11-05
EP3350836A1 (en) 2018-07-25
CN108028263B (zh) 2022-10-21

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