CN108023011A - 一种量子点膜层结构的制作方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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Abstract
本发明公开了提供一种量子点(QD)膜层结构的制作方法,属于LED领域。具体步骤为:基板清洗、烘干、刻槽或孔、在沟槽或孔内灌QD粉、沉积功能膜(防水隔绝空气薄膜),形成量子点膜层结构。本发明中将量子点封闭在功能膜层与基材薄膜层之间,一方面避免其与空气和水接触,使其可以在120℃下够长时间使用不受水和空气的影响,减少环境条件的限制;根据后续模组封装的需要,直接将量子点按一定排布形式灌注制成薄膜结构,可根据需要灵活的进行切割,甚至直接贴装,提高封装效率。
Description
技术领域
本发明属于LED封装技术领域,具体涉及一种在量子点膜层结构的制作方法。
背景技术
量子点(Quantum Dot,简称QD)是由锌、镉、硒、硫等元素化合成的半导体材料制成,直径2~10nm的纳米粒子,具有发光效率高,使用寿命长,颜色纯度好的特点。通过改变量子点材料的尺寸和化学组成可以使其荧光发射波长覆盖整个可见光区。
由于QD极易氧化,一点空气或水都会彻底毁掉量子点。因此,若要在空气中使用,必须将量子点进行隔绝空气和水的处理。目前QD应用的时候通常采用的方式:1)将QD灌注在玻璃细管内,两边做封装处理;2)用高端双层防潮和抗氧化膜双层封装保护。这两种方式完全依赖进口,成本高。另外,尺寸必须根据产品定制,无法在成品后根据尺寸任意切割,进而无法实现标准化。以上两种方式均实现工业化生产与普及。
LCD显示技术主要问题是色域范围低,QD发出的光纯度非常高,将其用于背光源可以很大程度上提升色域,使色彩更加鲜明,且透过QD薄膜可以生成接近自然光谱的色彩,应用前景看好。将量子点整合到显示屏目前有两种方式,一种是量子点薄膜,一种是侧入式量子管。三星和LG都采用的是第一种方式。
发明内容
本发明的目的是提供一种量子点膜层结构的制作方法,该膜层可将量子点按后续模组封装的需要,直接将量子点按一定排布形式灌注制成薄膜结构,可根据需要灵活的进行切割,甚至直接贴装,提高封装效率。
本发明的目的是这样实现的:根据后续模组封装要求,在透明基板上刻出规律排布的槽或孔,将QD灌注其中,再用防水隔绝空气的薄膜将QD封在功能膜与基板之间。具体步骤为:基板清洗、烘干、刻槽或孔、在沟槽或孔内灌QD粉、沉积功能膜(防水隔绝空气薄膜),形成量子点膜层结构。
该发明具体实施方法为:
1. 将透明基板或薄膜(蓝宝石、玻璃、PET、亚克力等)进行清洗并烘干;
2.按后续模组封装排列要求在透明基板或薄膜上刻出规则的槽或孔;
3.在槽或孔内灌注QD粉(QD为粉末、分散于油墨中或光敏胶中的形式存在);
4. 在透明基板或薄膜单面或双面沉积防水隔绝空气薄膜。
本发明的有益效果是:1)将量子点封闭在功能膜层与基材薄膜层之间,使QD与外界环境完全隔离,可以避免QD与空气和水接触,使其可以在120℃下够长时间使用不受水和空气的影响,减少环境条件的限制;2)直接将量子点按一定排布形式灌注制成薄膜结构,可根据需要灵活的进行切割,甚至直接贴装,提高封装效率。
附图说明
图1为量子点膜层结构的制作流程示意图;
图2为量子点膜层结构的侧视图。
具体实施方式
下面结合附图和具体实施方式对本发明进行详细说明。
图1为量子点膜层结构的制作流程,图2为量子点膜层结构的侧视图。将透明基板或薄膜1(蓝宝石、玻璃、PET、亚克力等)进行清洗并烘干;按后续模组封装排列要求在透明基板或薄膜上刻出规则的槽或孔3;在槽或孔内灌注QD粉(QD为粉末、分散于油墨中或光敏胶中的形式存在);根据开槽或孔的形式不同及实际需要在透明基板或薄膜单面或双面沉积防水隔绝空气薄膜(聚氨酯、环氧树脂、有机硅树脂、派瑞林等单层或多层复合膜结构)2及薄膜4。
以上内容是结合具体的优选实施方式对本发明所做的进一步详细说明,不能认定本发明的具体实施只限于这些说明。对于具有本发明所属领域基础知识的人员来讲,可以很容易对本发明进行变更和修改,这些变更和修改都应当视为属于本发明所提交的权利要求书确定的专利保护范围。
Claims (7)
1.一种量子点膜层结构的制作方法,具体步骤为:基板清洗、烘干、刻槽或孔、在沟槽或孔内灌QD粉、沉积功能膜(防水隔绝空气薄膜),形成QD膜。
2.根据权利要求1所述的一种量子点膜层结构的制作方法,其特征在于所述的基板为蓝宝石、玻璃、PET、亚克力透明材料。
3.根据权利要求1所述的一种量子点膜层结构的制作方法,其特征在于灌注的QD除了以粉末形式,还可以为QD粉分散于油墨中或者光敏胶中的形式。
4.根据权利要求1所述的一种量子点膜层结构的制作方法,其特征在于所述的防水隔绝空气功能膜层可为聚氨酯、环氧树脂、有机硅树脂、派瑞林等单层或多层复合膜结构。
5.根据权利要求1所述的一种量子点膜层结构的制作方法,其特征在于根据结构需要,功能膜层为单面镀或双面镀。
6.根据权利要求1所述的一种量子点膜层结构的制作方法,其特征在于所述的沟槽用机械、激光或黄光刻蚀方式制成。
7.根据权利要求1所述的一种量子点膜层结构的制作方法,其特征在于所述的刻蚀沟槽步骤用围坝胶代替。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109096823A (zh) * | 2018-06-28 | 2018-12-28 | 北京中科纳通电子技术有限公司 | 量子点膜的制备方法及其在液晶显示器中的应用 |
CN110416389A (zh) * | 2019-07-03 | 2019-11-05 | 北京中科纳通电子技术有限公司 | 图案化量子点膜制备方法及量子点膜 |
CN110416388A (zh) * | 2019-07-03 | 2019-11-05 | 北京中科纳通电子技术有限公司 | 图案化量子点膜及安装其的液晶显示器 |
CN112635515A (zh) * | 2021-01-20 | 2021-04-09 | 中国科学院长春光学精密机械与物理研究所 | 基于量子点色转换层的MicroLED显示器件及其制备方法 |
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CN106920865A (zh) * | 2016-12-27 | 2017-07-04 | 左洪波 | 量子点膜层结构的制作方法 |
CN206322733U (zh) * | 2016-12-27 | 2017-07-11 | 左洪波 | 高效q‑led封装结构的制作装置 |
CN107393938A (zh) * | 2017-08-12 | 2017-11-24 | 左洪波 | Micro‑LED蓝光显示屏封装方法 |
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Patent Citations (3)
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CN106920865A (zh) * | 2016-12-27 | 2017-07-04 | 左洪波 | 量子点膜层结构的制作方法 |
CN206322733U (zh) * | 2016-12-27 | 2017-07-11 | 左洪波 | 高效q‑led封装结构的制作装置 |
CN107393938A (zh) * | 2017-08-12 | 2017-11-24 | 左洪波 | Micro‑LED蓝光显示屏封装方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109096823A (zh) * | 2018-06-28 | 2018-12-28 | 北京中科纳通电子技术有限公司 | 量子点膜的制备方法及其在液晶显示器中的应用 |
CN110416389A (zh) * | 2019-07-03 | 2019-11-05 | 北京中科纳通电子技术有限公司 | 图案化量子点膜制备方法及量子点膜 |
CN110416388A (zh) * | 2019-07-03 | 2019-11-05 | 北京中科纳通电子技术有限公司 | 图案化量子点膜及安装其的液晶显示器 |
CN112635515A (zh) * | 2021-01-20 | 2021-04-09 | 中国科学院长春光学精密机械与物理研究所 | 基于量子点色转换层的MicroLED显示器件及其制备方法 |
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