CN108020969A - 薄膜晶体管基板和液晶显示器 - Google Patents

薄膜晶体管基板和液晶显示器 Download PDF

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Publication number
CN108020969A
CN108020969A CN201711046813.4A CN201711046813A CN108020969A CN 108020969 A CN108020969 A CN 108020969A CN 201711046813 A CN201711046813 A CN 201711046813A CN 108020969 A CN108020969 A CN 108020969A
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China
Prior art keywords
colour filter
film transistor
thin film
base plate
region
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CN201711046813.4A
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CN108020969B (zh
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禹昌升
李秉炫
洪淳焕
元奎植
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LG Display Co Ltd
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LG Display Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
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    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
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    • G02F2201/48Flattening arrangements

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

薄膜晶体管基板和液晶显示器。本公开涉及具有滤色器层的薄膜晶体管基板。本公开提供了一种薄膜晶体管基板,该薄膜晶体管基板包括:多个像素区域,所述多个像素区域以矩阵方式被设置在基板上,每个像素区域包括开口区域和非开口区域;第一滤色器和第二滤色器,该第一滤色器和该第二滤色器在该基板上层叠在非开口区域处;涂覆层,该涂覆层被设置在第一滤色器和第二滤色器上;半导体层,该半导体层在涂覆层上被设置在非开口区域处;栅极绝缘层和栅极,该栅极绝缘层和该栅极层叠在半导体层的中间部上;第三滤色器,该第三滤色器在栅极绝缘层和栅极上被设置在非开口区域上;以及源极和漏极,该源极和该漏极被设置在第三滤色器上。

Description

薄膜晶体管基板和液晶显示器
技术领域
本发明涉及具有滤色器层的薄膜晶体管基板。特别地,本公开涉及其中滤色器层用薄膜晶体管形成并且任何一个滤色器层用于薄膜晶体管基板的中间绝缘层的薄膜晶体管基板。
背景技术
液晶显示装置通过使用电场控制液晶层的光传导性来呈现视频数据。根据电场的方向,LCD可被分为两大类:一种是垂直电场型,另一种是水平电场型。
对于垂直电场型LCD,形成在上基板上的公共电极和形成在下基板上的像素电极彼此面对以形成方向垂直于基板面的电场。设置在上基板和下基板之间的扭转向列(TN)液晶层由垂直电场驱动。垂直电场型LCD具有更高的开口率的优点,而它具有约90度的较窄视角的缺点。
对于水平电场型LCD,公共电极和像素电极平行地形成在同一基板上。设置在上基板和下基板之间的液晶层由平行于基板面的电场以面内切换(或“IPS”)模式驱动。水平电场型LCD具有比垂直电场型LCD更宽的超过170度的视角和更快的响应速度的优点。然而,水平电场型LCD可能具有诸如背光的低开口率和传导率这样的缺点。
当前广泛应用的液晶显示器具有如下的结构:其中具有以矩阵方式排列的多个薄膜晶体管的薄膜晶体管基板与具有多个滤色器的滤色器基板接合,并且在这两个基板之间插入有液晶层。否则,液晶显示器具有如下的结构:其中具有滤色器和薄膜晶体管的下基板与上基板接合,并且在这两个基板之间插入有液晶层。
在薄膜晶体管上形成滤色器的结构被称为薄膜晶体管上滤色器(或COT)结构。由于薄膜晶体管和滤色器形成在同一基板上,因此用于COT结构的制造工艺比用于其它结构的制造工艺简单。此外,由于当接合两个基板时不考虑对准余量,因此能够容易地获得高开口率。
图1是例示根据现有技术的用于水平场型液晶显示器的薄膜晶体管基板的平面图。图2是例示根据现有技术通过沿着线I-I'切割图1的薄膜晶体管基板的结构的截面图。
参照图1和图2,用于水平场型液晶显示器的薄膜晶体管基板具有如下的结构:(透明)上基板USUB被附接在(透明)下基板DSUB上,在该(透明)上基板USUB和(透明)下基板DSUB之间具有液晶层LC。
多个滤色器CFR、CFG和CFB以矩阵方式被设置在上基板USUB的内表面上。此外,在各自相邻的两个滤色器之间,设置黑底BM。黑底BM限定每个像素区域,并且在一个像素区域中分配一个滤色器。
在下部基板DSUB上,设置有沿着水平方向延伸的选通线GL和沿着垂直方向延伸的数据线DL。优选地,选通线GL和数据线DL被设置为与上基板USUB的黑底相对应。以矩阵方式排列的像素区域由彼此交叉的选通线GL和数据线DL限定,选通线GL和数据线DL之间具有栅极绝缘层。
在像素区域的一个角部处,设置有薄膜晶体管;该薄膜晶体管包括从选通线GL延伸出的栅极G、从数据线DL延伸出的源极S以及以预定距离面对源极S的漏极D。半导体层A在覆盖栅极G的栅极绝缘层GI上被形成为与栅极G交叠。半导体层A的一侧部与源极S接触,半导体层A的另一侧部与漏极D接触。
钝化层PAS被设置在薄膜晶体管T上用于保护电子元件。在钝化层PAS上,像素电极PXL和公共电极COM由透明导电材料形成。像素电极PXL通过形成在钝化层PAS处的漏极接触孔DH与漏极D接触。像素电极PXL具有多个片段并列排列的梳状。
此外,公共电极COM连接到与选通线GL平行的公共线CL。结果,电场沿着像素电极PXL和公共电极COM之间的下基板DSUB的表面在水平方向上形成。被设置在上基板USUB和下基板DSUB之间的液晶层LC由水平电场驱动。
对于具有COT结构的薄膜晶体管基板的情况,薄膜晶体管和滤色器形成在同一基板上。图3是例示根据现有技术的用于在同一基板上具有滤色器和薄膜晶体管的液晶显示器的薄膜晶体管基板的结构的截面图。具有COT结构的液晶显示器包括上基板USUB、下基板DSUB和插入在这两个基板之间的液晶层LC。在下基板DSUB上,一起形成薄膜晶体管T与滤色器CFR、CFG和CFB。
例如,如图3所示,滤色器CF被插入在栅极绝缘层GI和钝化层PAS之间。在这种情况下,上基板USUB具有与显示功能无关的其它元件,例如间隔件。液晶显示器是通过将上基板USUB与具有滤色器CF和薄膜晶体管T的下基板DSUB接合并且通过在这两个基板之间注入液晶层LC而形成的。
即使COT结构具有一些优点,但是因为在具有薄膜晶体管的基板上形成滤色器,所以制造工艺将是复杂的。例如,滤色器CF分别包括呈现红色R、绿色G和蓝色B的三个子颜色滤色器。因此,至少需要三次掩模工艺来形成滤色器CF。由于制造工艺复杂,因此制造成品率将下降。因此,为了使用COT结构的优点,需要简化制造工艺。此外,需要根据这些制造工艺采用新的COT结构的液晶显示器。
发明内容
为了克服上述缺点,本公开的目的是提供一种在同一基板上具有薄膜晶体管和滤色器的液晶显示器。本公开的另一目的是提供一种具有高开口率的用于液晶显示器的薄膜晶体管基板,凭借高开口率,不用考虑用于接合两个基板的对准余量。本公开的又一目的是提供一种具有超高分辨率和超高开口率的用于液晶显示器的薄膜晶体管基板。
为了实现上述目的,本公开的一个实施方式提供了一种薄膜晶体管基板,该薄膜晶体管基板包括:多个像素区域,所述多个像素区域以矩阵方式被设置在基板上,每个像素区域包括开口区域和非开口区域;第一滤色器和第二滤色器,所述第一滤色器和所述第二滤色器在所述基板上层叠在所述非开口区域处;涂覆层,所述涂覆层被设置在所述第一滤色器和所述第二滤色器上;半导体层,所述半导体层在所述涂覆层上被设置在所述非开口区域处;栅极绝缘层和栅极,所述栅极绝缘层和所述栅极层叠在所述半导体层的中间部上;第三滤色器,所述第三滤色器在所述栅极绝缘层和所述栅极上被设置在所述非开口区域上;以及源极和漏极,所述源极和所述漏极被设置在所述第三滤色器上。
在一些实施方式中,该薄膜晶体管基板还包括:平面层,所述平面层位于所述源极和所述漏极上;公共电极,所述公共电极位于所述平面层上;钝化层,所述钝化层位于所述公共电极上;以及像素电极,所述像素电极在所述钝化层上与所述漏极接触。
在一些实施方式中,所述第一滤色器、所述第二滤色器和所述第三滤色器中的每一个为红色滤色器、绿色滤色器和蓝色滤色器中的任一种,其中,所述第一滤色器、所述第二滤色器和所述第三滤色器彼此不同。
在一些实施方式中,该薄膜晶体管基板还包括:选通线,所述选通线连接到所述栅极并且在所述基板上沿着第一方向延伸;以及数据线,所述数据线连接到所述源极并且在所述基板上沿着第二方向延伸,其中,所述像素区域被限定为由所述选通线和所述数据线包围的区域。
在一些实施方式中,所述公共电极包括覆盖所述像素区域的所述开口区域并覆盖所有像素区域的透明导电材料;并且所述像素电极包含所述透明导电材料,所述透明导电材料具有在所述像素区域的所述开口区域内以预定距离彼此平行设置的多个区段。
在一些实施方式中,所述像素区域包括第一颜色像素区域、第二颜色像素区域和第三颜色像素区域。
在一些实施方式中,所述第一滤色器还被设置在所述第一颜色像素区域的开口区域处,所述第二滤色器还被设置在所述第二颜色像素区域的开口区域处,并且所述第三滤色器还被设置在所述第三颜色像素区域的开口区域处。
在一些实施方式中,该薄膜晶体管基板还包括中间绝缘层,所述中间绝缘层位于所述半导体层和所述栅极上并且位于所述第三滤色器下。
根据本公开的用于液晶显示器的薄膜晶体管基板在同一基板上包括薄膜晶体管和滤色器。因此,不用考虑用于接合两个基板的对准余量,使得确保高开口率。特别地,本公开提出了一种最佳的结构,该结构适用于在极小像素面积的情况下获得具有超过UHD速率(或4K速率)的超高密度分辨率的液晶显示器的高开口率。通过当在基板上形成滤色器时在非开口区域处层叠至少两个滤色器,不需要黑底。此外,使用滤色器代替中间绝缘层,简化了制造工艺。
附图说明
附图被包括以提供对本发明的进一步理解,并且被并入本说明书中并构成本说明书的一部分,附图例示了本发明的实施方式,并且与本说明书一起用来解释本发明的原理。
图1是例示根据现有技术的用于水平场型液晶显示器的薄膜晶体管基板的平面图。
图2是例示根据现有技术通过沿着线I-I'切割图1的薄膜晶体管基板的结构的截面图。
图3是例示根据现有技术的用于在同一基板上具有滤色器和薄膜晶体管的液晶显示器的薄膜晶体管基板的结构的截面图。
图4是例示本公开的第一实施方式的液晶显示器的结构的平面图。
图5是例示本公开的第一实施方式的沿着线I-I'截取的液晶显示器的结构的截面图。
图6、图7和图8是例示根据本公开的第一实施方式的滤色器的图案的平面图。
图9是例示本发明的第二实施方式的液晶显示器的结构的截面图。
具体实施方式
参照附图,将描述本公开的优选实施方式。在整个详细描述中,相同的附图标记指定相同的元件。然而,本公开不受这些实施方式的限制,但是可以在不改变技术精神的情况下应用于各种改变或修改。在下面的实施方式中,为了便于说明,选择元件的名称,并且所选择的名称可能与实际名称不同。
<第一实施方式>
参照图4至图8,将解释本公开的第一实施方式。图4是例示本公开的第一实施方式的液晶显示器的结构的平面图。图5是例示本公开的第一实施方式的沿着线I-I'截取的液晶显示器的结构的截面图。图6、图7和图8是例示根据本公开的第一实施方式的滤色器的图案的平面图。
参照图4和图5,根据本发明的第一实施方式的液晶显示器包括在基板上SUB沿着第一(即,水平)方向延伸的选通线GL和沿着第二(即,垂直)方向延伸的数据线DL。当多条选通线GL与多条数据线DL交叉时,多个像素区域PA被限定为以矩阵方式排列。在每个像素区域处,设置薄膜晶体管T和连接到薄膜晶体管T的像素电极PXL。
像素区域PA包括呈现视频数据的开口区域AP和不透光的非开口区域NP。在非开口区域NP处,设置选通线GL、数据线DL和薄膜晶体管T。在开口区域AP处,设置像素电极PXL和公共电极COM。
从横截面图的角度来看,红色滤色器CFR被沉积在基板SUB上。此外,从平面图的角度来看,图6是例示沉积红色滤色器CFR的区域的平面图。参照图6,红色滤色器CFR被沉积在红色像素区PR的开口区域AP处。此外,红色滤色器CFR覆盖蓝色像素区域PB和绿色像素区域PG的除了开口区域AP之外的所有非开口区域NP。
从横截面图的角度来看,蓝色滤色器CFB层叠在红色滤色器CFR上。从平面图的角度来看,图7是例示沉积蓝色滤色器CFB的区域的平面图。参照图7,蓝色滤色器CFB被沉积在蓝色像素区域PB的开口区域AP处。此外,蓝色滤色器CFB覆盖红色像素区域PR和绿色像素区域PG的除了开口区域AP之外的所有非开口区域NP。结果,在非开口区域NP处,蓝色滤色器CFB被直接层叠在红色滤色器CFR上。
从横截面图的角度来看,在具有红色滤色器CFR和蓝色滤色器CFB的基板SUB的整个表面上,沉积涂覆层OC。涂覆层OC可以由于层叠的红色滤色器CFR和蓝色滤色器CFB而使基板SUB的凹凸表面平坦和/或平滑。
在涂覆层OC上,可以沉积缓冲层BUF。涂覆层OC可以包含有机材料。当薄膜晶体管被直接形成在涂覆层OC上时,在界面处可能出现一些缺陷。为了防止这些缺陷,使用具有良好界面性质的材料与有机材料和/或无机材料,在涂覆层OC上形成缓冲层BUF。
在缓冲层BUF上,形成半导体层A。栅极绝缘层GI和栅极G被形成在半导体层A的中间部上方。栅极绝缘层GI和栅极G具有相同的形状。半导体层A与栅极G的交叠区域被限定为沟道区域。将来自沟道区域的一侧区域限定为源极区域,并且将来自沟道区域的另一侧区域限定为漏极区域。
绿色滤色器CFG被沉积在具有半导体层A和栅极G的基板SUB上。从平面图的角度来看,图8是例示沉积绿色滤色器CFG的区域的平面图。参照图8,绿色滤色器CFG被设置在绿色像素区域PG的开口区域AP处。此外,绿色滤色器CFG覆盖蓝色像素区域PB和红色像素区域PR的除了开口区域AP之外的所有非开口区域NP。
当半导体层A和栅极G被设置在非开口区域NP时,绿色滤色器CFG覆盖被设置在包括蓝色像素区域PB、红色像素区域PR和绿色像素区域PG的所有像素区域处的所有半导体层A。绿色滤色器CFG具有用于使半导体层A的源极区域和漏极区域暴露的一些接触孔。也就是说,绿色滤色器CFG用于覆盖栅极G的中间绝缘层。
在绿色滤色器CFG上,形成数据线DL、源极S和漏极D。源极S从数据线DL延伸出并与半导体层A的源极区域接触。漏极D与半导体层A的漏极区域接触。薄膜晶体管T完成。
在薄膜晶体管T上,平面层PAC被沉积成覆盖基板SUB的整个表面。在平面层PAC处形成像素接触孔PH以使漏极D暴露。在平面层PAC上,形成公共电极COM。公共电极COM可以是被沉积在基板的整个表面上方的透明导电层。优选地,公共电极COM不覆盖像素接触孔PH。
在公共电极COM上,钝化层PAS被沉积成覆盖基板SUB的整个表面。钝化层PAS还具有用于使漏极D暴露的像素接触孔PH。在钝化层PAS上,形成像素电极PXL。像素电极PXL通过像素接触孔PH与漏极D接触。
根据本公开的具有滤色器CFR、CFG和CFB的薄膜晶体管基板具有如下的结构:其中红色滤色器CFR、蓝色滤色器CFB和绿色滤色器CFG依次层叠在非开口区域NP处。因此,在无需额外的黑底的情况下,层叠的滤色器CFR、CFG和CFB用作各个相邻的两个像素区域之间的黑底。此外,绿色滤色器CFG用作选通线GL和数据线DL之间的中间绝缘层。结果,不需要用于形成黑底和中间绝缘层所需的掩模工艺。换句话说,根据本公开的用于液晶显示器的制造方法比现有技术减少了至少两次掩模工艺。能够缩短制造粘接时间,并且能够提高制造成品率。
红色CFR、绿色滤色器CFG和蓝色滤色器CFB由同一基板SUB上的薄膜晶体管T和像素电极PXL形成。黑底被形成为层叠滤色器。因此,不会发生未对准,因此不用考虑对准余量。结果,能够确保最大的开口率。
在上面的描述中,解释了滤色器按红色、蓝色和绿色的顺序进行层叠。然而,并不限于此层叠顺序。如果需要,层叠顺序可以不同。优选地,用于中间绝缘层的滤色器将是绿色滤色器CFG。绿色滤色器CFG比用于形成使半导体层A的源极区域和漏极区域暴露的接触孔的其它滤色器好。
<第二实施方式>
在下文中,参照图9,将解释本公开的第二实施方式。在第一实施方式中,解释了其中绿色滤色器被用于中间绝缘层的液晶显示器的结构。在第二实施方式中,将解释其中包括额外的中间绝缘层的液晶显示器的结构。图9是例示本发明的第二实施方式的液晶显示器的结构的截面图。
根据本公开的第二实施方式的液晶显示器的结构与第一实施方式的结构非常相似。不同之处在于在绿色滤色器下方包括附加的中间绝缘层。
参照图9,首先将红色滤色器CFR沉积在基板SUB上。红色滤色器CFR具有与第一实施方式相同的图案。红色滤色器CFR可以被沉积在图6所示的阴影区域处。例如,红色滤色器CFR被沉积在红色像素区域PR的开口区域AP处。此外,红色滤色器CFR覆盖蓝色像素区域PB和绿色像素区域PG的除了开口区域AP之外的所有非开口区域NP。
从横截面图的角度来看,蓝色滤色器CFB被层叠在红色滤色器CFR上。蓝色滤色器CFB具有与第一实施方式相同的图案。蓝色滤色器CFB可以被沉积在图7所示的阴影区域沉积。例如,蓝色滤色器CFB被沉积在蓝色像素区域PB的开口区域AP处。此外,蓝色滤色器CFB覆盖红色像素区域PR和绿色像素区域PG的除了开口区域AP之外的所有非开口区域NP。结果,在非开口区域NP处,蓝色滤色器CFB被直接层叠在红色滤色器CFR上。
从横截面图的角度来看,在具有红色滤色器CFR和蓝色滤色器CFB的基板SUB的整个表面上,沉积涂覆层OC。涂覆层OC可以由于层叠的红色滤色器CFR和蓝色滤色器CFB而使基板SUB的凹凸表面平坦和/或平滑。
在涂覆层OC上,可以沉积缓冲层BUF。涂覆层OC可以包含有机材料。当薄膜晶体管被直接形成在涂覆层OC上时,在界面处可能出现一些缺陷。为了防止这些缺陷,使用具有良好界面性质的材料与有机材料和/或无机材料在涂覆层OC上形成缓冲层BUF。
在缓冲层BUF上,形成半导体层A。栅极绝缘层GI和栅极G被形成在半导体层A的中间部上方。栅极绝缘层GI和栅极G具有相同的形状。半导体层A与栅极G的交叠区域被限定为沟道区域。将来自沟道区域的一侧区域限定为源极区域,并且将来自沟道区域的另一侧区域限定为漏极区域。
中间绝缘层IN被沉积在具有半导体层A和栅极G的基板SUB上。绿色滤色器CFG被沉积在中间绝缘层IN上。绿色滤色器可以具有与第一实施方式相同的图案。从平面图的角度来看,图8是例示沉积绿色滤色器CFG的区域的平面图。参照图8,绿色滤色器CFG被设置在绿色像素区域PG的开口区域AP处。此外,绿色滤色器CFG覆盖蓝色像素区域PB和红色像素区域PR的除了开口区域AP之外的所有非开口区域NP。中间绝缘层IN可以覆盖与绿色滤色器CFG相同的区域并且具有与绿色滤色器CFG相同的图案。
在中间绝缘层IN上形成数据线DL、源极S和漏极D。中间绝缘层IN和绿色滤色器CFG具有用于使半导体层A的源极区域和漏极区域暴露的一些接触孔。源极S从数据线DL延伸出并与半导体层的源极区域A接触。漏极D与半导体层A的漏极区域接触。薄膜晶体管T完成。
在薄膜晶体管T上,平面层PAC被沉积成覆盖基板SUB的整个表面。在平面层PAC处形成像素接触孔PH以使漏极D暴露。在平面层PAC上,形成公共电极COM。公共电极COM可以是被沉积在基板的整个表面上方的透明导电层。优选地,公共电极COM不覆盖像素接触孔PH。
在公共电极COM上,钝化层PAS被沉积成覆盖基板SUB的整个表面。钝化层PAS还具有用于使漏极D暴露的像素接触孔PH。在钝化层PAS上,形成像素电极PXL。像素电极PXL通过像素接触孔PH与漏极D接触。
根据本公开的具有滤色器CFR、CFG和CFB的薄膜晶体管基板具有如下的结构:其中红色滤色器CFR、蓝色滤色器CFB和绿色滤色器CFG依次层叠在非开口区域NP处。因此,在无需额外的黑底的情况下,层叠的滤色器CFR、CFG和CFB用作各个相邻的两个像素区域之间的黑底。此外,中间绝缘层IN被层叠在绿色滤色器CFG的下方并且与绿色滤色器CFG同时进行构图,使得中间绝缘层IN具有与绿色滤色器CFG相同的形状。结果,不需要用于形成黑底和中间绝缘层所需的掩模工艺。换句话说,根据本公开的用于液晶显示器的制造方法比现有技术减少了至少两次掩模工艺。能够缩短制造粘接时间,并且能够提高制造成品率。
包括红色CFR、绿色滤色器CFG和蓝色滤色器CFB的全部滤色器由同一基板SUB上的薄膜晶体管T和像素电极PXL形成。黑底被形成为对滤色器进行层叠。因此,不会发生未对准,因此不用考虑对准余量。结果,能够确保最大的开口率。
在上面的描述中,解释了滤色器按红色、蓝色和绿色的顺序进行层叠。然而,并不限于此层叠顺序。如果需要,层叠顺序可以不同。优选地,沉积在中间绝缘层IN上方的滤色器将是绿色滤色器CFG。绿色滤色器CFG比用于形成使半导体层A的源极区域和漏极区域暴露的接触孔的其它滤色器好。
虽然已经参照附图详细地描述了本发明的实施方式,但是本领域技术人员将要理解的是,能够在不改变本发明的技术精神或基本特征的情况下以其它具体的形式来实现本发明。因此,应当注意的是,上述实施方式在所有方面仅是例示性的,而不应被解释为限制本发明。本发明的范围由所附的权利要求而不是本发明的详细描述来限定。在权利要求的含义和范围内作出的所有改变或修改或者其等同物都应被解释为落在本发明的范围内。

Claims (9)

1.一种薄膜晶体管基板,该薄膜晶体管基板包括:
多个像素区域,所述多个像素区域以矩阵方式被设置在基板上,每个像素区域包括开口区域和非开口区域;
第一滤色器和第二滤色器,所述第一滤色器和所述第二滤色器层叠在所述基板上的所述非开口区域处;
涂覆层,所述涂覆层被设置在所述第一滤色器和所述第二滤色器上;
半导体层,所述半导体层被设置在所述涂覆层上的所述非开口区域处;
栅极绝缘层和栅极,所述栅极绝缘层和所述栅极层叠在所述半导体层的中间部上;
第三滤色器,所述第三滤色器被设置在所述半导体层和所述栅极上的所述非开口区域处;以及
源极和漏极,所述源极和所述漏极被设置在所述第三滤色器上。
2.根据权利要求1所述的薄膜晶体管基板,该薄膜晶体管基板还包括:
平面层,所述平面层位于所述源极和所述漏极上;
公共电极,所述公共电极位于所述平面层上;
钝化层,所述钝化层位于所述公共电极上;以及
像素电极,所述像素电极在所述钝化层上与所述漏极接触。
3.根据权利要求1所述的薄膜晶体管基板,其中,所述第一滤色器、所述第二滤色器和所述第三滤色器中的每一个为红色滤色器、绿色滤色器和蓝色滤色器中的任一种,其中,所述第一滤色器、所述第二滤色器和所述第三滤色器彼此不同。
4.根据权利要求1所述的薄膜晶体管基板,该薄膜晶体管基板还包括:
选通线,所述选通线连接到所述栅极并且在所述基板上沿着第一方向延伸;以及
数据线,所述数据线连接到所述源极并且在所述基板上沿着第二方向延伸,
其中,所述像素区域被限定为由所述选通线和所述数据线包围的区域。
5.根据权利要求2所述的薄膜晶体管基板,
其中,所述公共电极包括设置在所述像素区域上的透明导电材料;并且
其中,所述像素电极包含所述透明导电材料,所述透明导电材料具有在所述像素区域的所述开口区域内以预定距离彼此平行设置的多个区段。
6.根据权利要求1所述的薄膜晶体管基板,其中,所述像素区域包括第一颜色像素区域、第二颜色像素区域和第三颜色像素区域。
7.根据权利要求6所述的薄膜晶体管基板,
其中,所述第一滤色器还被设置在所述第一颜色像素区域的开口区域处,
其中,所述第二滤色器还被设置在所述第二颜色像素区域的开口区域处,并且
其中,所述第三滤色器还被设置在所述第三颜色像素区域的开口区域处。
8.根据权利要求6或7所述的薄膜晶体管基板,该薄膜晶体管基板还包括:
中间绝缘层,所述中间绝缘层位于所述半导体层和所述栅极上并且位于所述第三滤色器下。
9.一种液晶显示器,该液晶显示器包括:
根据权利要求1至8中的任一项所述的薄膜晶体管基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114442388A (zh) * 2021-12-29 2022-05-06 长沙惠科光电有限公司 显示面板及其制备方法及显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020112600A (ja) * 2019-01-08 2020-07-27 株式会社ジャパンディスプレイ 表示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612026A (zh) * 2003-10-29 2005-05-04 三星电子株式会社 薄膜二极管板及其制造方法
CN1677207A (zh) * 2004-03-30 2005-10-05 Lg.菲利浦Lcd株式会社 液晶显示器及其制造方法
CN101174071A (zh) * 2006-10-31 2008-05-07 株式会社半导体能源研究所 液晶显示装置、以及电子设备
CN101470295A (zh) * 2007-12-26 2009-07-01 Nec液晶技术株式会社 滤色器基板和液晶显示器单元
US7561229B2 (en) * 2004-05-24 2009-07-14 Lg Display Co., Ltd. Thin film transistor substrate with color filter and method for fabricating the same
CN102096224A (zh) * 2009-10-29 2011-06-15 乐金显示有限公司 液晶显示设备及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3575135B2 (ja) * 1995-10-18 2004-10-13 セイコーエプソン株式会社 液晶表示装置
KR100638525B1 (ko) * 1999-11-15 2006-10-25 엘지.필립스 엘시디 주식회사 컬러 액정표시장치용 어레이기판 제조방법
JP2002090749A (ja) 2000-09-11 2002-03-27 Nec Corp 液晶表示装置及びその製造方法
KR100808466B1 (ko) * 2001-07-30 2008-03-03 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판 및 그의 제조 방법
US7046315B2 (en) 2002-12-06 2006-05-16 Lg.Philips Lcd Co., Ltd. Array substrate of liquid crystal display device having color filter on thin film transistor structure and method of fabricating the same
KR100959366B1 (ko) 2003-07-04 2010-05-24 엘지디스플레이 주식회사 씨오티 구조 액정표시장치용 기판 및 그 제조방법
TWI309327B (en) 2003-07-22 2009-05-01 Chi Mei Optoelectronics Corp Thin film transistor liquid crystal display panel, array substrate of the same, and method of manufacturing the same
KR20090075554A (ko) * 2008-01-04 2009-07-08 삼성전자주식회사 액정 표시 장치와 그 제조 방법
KR20130090129A (ko) * 2012-02-03 2013-08-13 엘지디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
KR102122402B1 (ko) * 2013-12-31 2020-06-15 엘지디스플레이 주식회사 씨오티 구조 액정표시장치 및 이의 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612026A (zh) * 2003-10-29 2005-05-04 三星电子株式会社 薄膜二极管板及其制造方法
CN1677207A (zh) * 2004-03-30 2005-10-05 Lg.菲利浦Lcd株式会社 液晶显示器及其制造方法
US7561229B2 (en) * 2004-05-24 2009-07-14 Lg Display Co., Ltd. Thin film transistor substrate with color filter and method for fabricating the same
CN101174071A (zh) * 2006-10-31 2008-05-07 株式会社半导体能源研究所 液晶显示装置、以及电子设备
CN101470295A (zh) * 2007-12-26 2009-07-01 Nec液晶技术株式会社 滤色器基板和液晶显示器单元
CN102096224A (zh) * 2009-10-29 2011-06-15 乐金显示有限公司 液晶显示设备及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114442388A (zh) * 2021-12-29 2022-05-06 长沙惠科光电有限公司 显示面板及其制备方法及显示装置

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