TWI650604B - 具有彩色濾光片的薄膜電晶體基板 - Google Patents

具有彩色濾光片的薄膜電晶體基板 Download PDF

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Publication number
TWI650604B
TWI650604B TW106137441A TW106137441A TWI650604B TW I650604 B TWI650604 B TW I650604B TW 106137441 A TW106137441 A TW 106137441A TW 106137441 A TW106137441 A TW 106137441A TW I650604 B TWI650604 B TW I650604B
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Taiwan
Prior art keywords
color filter
film transistor
thin film
pixel
electrode
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TW106137441A
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English (en)
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TW201830113A (zh
Inventor
禹昌升
李秉炫
洪淳煥
元奎植
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南韓商Lg顯示器股份有限公司
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133357Planarisation layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134363Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1362Active matrix addressed cells
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    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01ELECTRIC ELEMENTS
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
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    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136231Active matrix addressed cells for reducing the number of lithographic steps
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685Top gates
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • G02F2201/121Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/48Flattening arrangements

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

本發明提供一種具有彩色濾光片的薄膜電晶體基板。該薄膜電晶體基板包括:複數個像素區域,以矩陣方式設置在一基板上,每一個像素區域包括一開口區域和一非開口區域;一第一彩色濾光片和一第二彩色濾光片,堆疊在該基板上的該非開口區域;一覆蓋層,設置在該第一彩色濾光片和該第二彩色濾光片上;一半導體層,設置在該覆蓋層上的該非開口區域;一閘絕緣層和一閘極電極,堆疊在該半導體層的一中間部分上;一第三彩色濾光片,位在該半導體層和該閘極電極上的該非開口區域;以及一源極電極和一汲極電極,設置在該第三彩色濾光片上。

Description

具有彩色濾光片的薄膜電晶體基板
本發明係關於一種具有彩色濾光片的薄膜電晶體基板,且特別是關於一種薄膜電晶體基板,其中彩色濾光片與薄膜電晶體一起形成,並且彩色濾光片中之任何一者係用作薄膜電晶體的中間絕緣層。
液晶顯示裝置藉由使用電場控制液晶層之光傳導率顯示視頻資料。根據電場的方向,LCD可分為兩大類:一種是垂直電場型,另一種是水平電場型。
對於垂直電場型LCD,形成在上基板上的共同電極與形成在下基板上的像素電極彼此面對以形成垂直於基板面之方向的電場。設置在上基板與下基板之間的扭曲向列型(TN)液晶層由垂直電場驅動。垂直電場型液晶顯示器具有較高之開口率的優點,但具有較窄之視角約90度的缺點。
對於水平電場型LCD,共同電極和像素電極平行地形成在同一基板上。設置在上基板與下基板之間的液晶層經由平行於基板面的電場以面內切換(或「IPS」)模式被驅動。與垂直電場型LCD相比,水平電場型液晶顯示器具有視角寬於170度,且響應速度快的優點。然而,水平電場型LCD可能具有諸如低開口率和低背光光傳導率的缺點。
現在廣泛使用的液晶顯示器具有以下結構:具有以矩陣方式排列的複數個薄膜電晶體的薄膜電晶體基板與具有複數個彩色濾光片的彩色濾光片基板結合,並且在這兩個基板之間插入液晶層。或者,液晶顯示器具有以下結構:具有彩色濾光片和薄膜電晶體的下基板與上基板結合,並且在這兩個基板之間插入液晶層。
在薄膜電晶體上形成彩色濾光片的結構稱為薄膜電晶體結構上 的彩色濾光片(或COT)。由於薄膜電晶體和彩色濾光片形成在同一基板上,所以COT結構的製程比其他結構更簡單。此外,由於當連接兩個基板時不考慮對準裕度,所以可以容易地獲得高開口率。
圖1係顯示根據習知技術用於水平電場型液晶顯示器的薄膜電晶體基板的平面圖。圖2係顯示根據習知技術沿圖1的I-I'線剖切之薄膜電晶體基板結構的剖視圖。
如圖1和圖2所示,用於水平電場型液晶顯示器的薄膜電晶體基板具有(透明的)上基板USUB附著在(透明的)下基板DSUB上,其間具有液晶層LC的結構。
複數個彩色濾光片CFR、CFG和CFB以矩陣方式設置在上基板USUB的內表面上。另外,在每一個相鄰的兩個彩色濾光片之間,設置黑色矩陣BM。黑色矩陣BM定義每一個像素區域,並且一個彩色濾光片被分配在一個像素區域中。
在下基板DSUB上,設置有沿水平方向延伸的閘極線GL和沿垂直方向延伸的資料線DL。較佳的是,閘極線GL和資料線DL配置成對應於上基板USUB的黑色矩陣。以矩陣方式排列的像素區域由彼此交叉的閘極線GL和資料線DL定義,在閘極線GL與資料線DL之間具有閘極絕緣層。
在像素區域的一個角落設置有薄膜電晶體,薄膜電晶體包括從閘極線GL伸出的閘極電極G、從資料線DL伸出的源極電極S、以及以預定距離與源極電極S面對的汲極電極D。半導體層A形成為在覆蓋閘極電極G的閘極絕緣層GI上與閘極電極G重疊。半導體層A的一側面部分與源極電極S接觸,半導體層A的另一側面部分則與汲極電極D接觸。
鈍化層PAS設置在薄膜電晶體T上以保護電子元件。在鈍化層PAS上,像素電極PXL和共同電極COM由透明導電材料形成。像素電極PXL經由形成在鈍化層PAS的汲極接觸孔DH與汲極電極D接觸。像素電極PXL具有梳鋸齒狀,其中複數個區段以預定距離彼此平行排列。共同電極COM也具有梳鋸齒狀,其中複數個區段以預定距離彼此平行排列,並且與像素電極PXL交替排列。
此外,共同電極COM連接到與閘極線GL平行的共同線CL。因此,沿像素電極PXL與共同電極COM之間的下基板DSUB的表面在水平方向 上形成電場。設置在上基板USUB與下基板DSUB之間的液晶層LC由水平電場驅動。
對於具有COT結構的薄膜電晶體基板的例子,薄膜電晶體和彩色濾光片形成在相同的基板上。圖3係顯示根據習知技術在同一基板上具有彩色濾光片和薄膜電晶體之用於液晶顯示器的薄膜電晶體基板結構的剖視圖。具有COT結構的液晶顯示器包括上基板USUB、下基板DSUB和插入在這兩個基板之間的液晶層LC。在下基板DSUB上,薄膜電晶體T和彩色濾光片CFR、CFG和CFB一起形成。
例如,如圖3所示,彩色濾光片CF被插入在閘極絕緣層GI與鈍化層PAS之間。在此例子中,上基板USUB具有與顯示功能無關的其他元件,例如間隔件。液晶顯示器藉由將上基板USUB與具有彩色濾光片CF和薄膜電晶體T的下基板DSUB連接以及藉由將液晶層LC注入到兩個基板之間來形成。
縱使COT結構具有一些優點,但由於彩色濾光片形成在具有薄膜電晶體的基板上,製程將變得複雜。例如,彩色濾光片CF包括三個子彩色濾光片,分別代表紅色R、綠色G和藍色B。因此,至少需要三個光罩製程來形成彩色濾光片CF。由於製程複雜,製造產率將會下降。因此,為了利用COT結構的優點,需要簡化的製程。此外,採用根據這些製程之新COT結構的液晶顯示器是非常必要的。
為了克服上述缺點,本發明的目的在於提供一種具有在同一基板上的薄膜電晶體和彩色濾光片的液晶顯示器。本發明的另一目的在於提供一種用於具有高開口率之液晶顯示器的薄膜電晶體基板,藉由該薄膜電晶體基板,不需考慮連接兩個基板時的對準裕度。本發明的另一目的是提供一種具有超高解析度和超高開口率之液晶顯示器用的薄膜電晶體基板。
為實現上述目的,本發明一個實施例提供一種薄膜電晶體基板,包括:複數個像素區,以一矩陣方式設置在一基板上,每一個像素區包括一開口區域和一非開口區域;一第一彩色濾光片和一第二彩色濾光片,堆疊在該基板上的該非開口區域;一覆蓋層,設置在該第一彩色濾光片和該第二彩色濾光片上;一半導體層,設置在該覆蓋層上的該非開口區域;一閘絕緣層和一閘極 電極,堆疊在該半導體層的一中間部分上;一第三彩色濾光片,位在該半導體層和該閘極電極上的該非開口區域;以及一源極電極和一汲極電極,設置在該第三彩色濾光片上。
在一些實施例中,該薄膜電晶體基板進一步包括:一平面層,位於該源極電極和該汲極電極上;一共同電極,位於該平面層上;一鈍化層,位於該共同電極上;以及一像素電極,在該鈍化層上與該汲極電極接觸。
在一些實施例中,該第一彩色濾光片、該第二彩色濾光片和該第三彩色濾光片中的每一者是一紅色濾光片、一綠色濾光片和一藍色濾光片中的任一者。
在一些實施例中,該薄膜電晶體基板更包括:一閘極線,連接到該閘極電極並且在該基板上沿第一方向延伸;以及一資料線,連接到該源極電極並且在該基板上沿第二方向延伸,其中該像素區域被定義為由該閘極線和該資料線包圍的區域。
在一些實施例中,該共同電極包括一透明導電材料,覆蓋該像素區域的該開口區域並覆蓋所有像素區域;以及該像素電極包括該透明導電材料,該透明導電材料具有複數個區段,該複數個區段在該像素區域的該開口區域內以一預定距離彼此平行設置。
在一些實施例中,該等像素區域包括一第一彩色像素區域、一第二彩色像素區域和一第三彩色像素區域。
在一些實施例中,該第一彩色濾光片進一步設置在該第一彩色像素區域的開口區域,該第二彩色濾光片進一步設置在該第二彩色像素區域的開口區域,以及該第三彩色濾光片進一步設置在該第三彩色像素區域的開口區域。
在一些實施例中,該薄膜電晶體基板更包括:一中間絕緣層,位在該半導體層和該閘極電極上以及在該第三彩色濾光片下方。
根據本發明之用於液晶顯示器的薄膜電晶體基板包括一薄膜電晶體和一彩色濾光片,位於同一基板上。因此,不需考慮連接兩個基板時的對準裕度,從而確保高開口率。尤其是,本發明提出一種適用於獲得液晶顯示器的高開口率的最佳結構,該液晶顯示器具有UHD速率(或4K速率)的超高密度解析度和極小像素區域。當在基板上形成彩色濾光片時,藉由在非開口區域堆疊至少兩個彩色濾光片,則不需要黑色矩陣。此外,使用彩色濾光片代替中 間絕緣層,簡化了製程。
A‧‧‧半導體層
AP‧‧‧開口區域
BM‧‧‧黑色矩陣
BUF‧‧‧緩衝層
CFB‧‧‧藍色濾光片
CFG‧‧‧綠色濾光片
CFR‧‧‧紅色濾光片
CL‧‧‧共同線
COM‧‧‧共同電極
D‧‧‧汲極電極
DH‧‧‧汲極接觸孔
DL‧‧‧資料線
DSUB‧‧‧下基板
G‧‧‧閘極電極
GI‧‧‧閘絕緣層
GL‧‧‧閘極線
IN‧‧‧中間絕緣層
LC‧‧‧液晶層
NP‧‧‧非開口區域
OC‧‧‧覆蓋層
PA‧‧‧像素區域
PAC‧‧‧平面層
PAS‧‧‧鈍化層
PB‧‧‧藍色像素區域
PG‧‧‧綠色像素區域
PH‧‧‧像素接觸孔
PR‧‧‧紅色像素區域
PXL‧‧‧像素電極
S‧‧‧源極電極
SUB‧‧‧基板
T‧‧‧薄膜電晶體
USUB‧‧‧上基板
包含在本說明書中以提供對本發明進一步了解以及併入且構成本說明書的一部分的附圖係用以說明本發明的實施例,以及配合發明說明作為解釋本發明的原理。在圖式中:圖1係顯示根據習知技術用於水平電場型液晶顯示器的薄膜電晶體基板的平面圖;圖2係顯示根據習知技術沿圖1的I-I'線剖切的薄膜電晶體基板結構的剖視圖;圖3係顯示根據習知技術在同一基板上具有彩色濾光片和薄膜電晶體之液晶顯示器的薄膜電晶體基板結構的剖視圖;圖4係顯示根據本發明第一實施例之液晶顯示器結構的平面圖;圖5係顯示根據本發明第一實施例沿圖4的I-I'線剖切之液晶顯示器結構的剖視圖;圖6至圖8係顯示根據本發明第一實施例之彩色濾光片圖案的平面圖;以及圖9係顯示根據本發明第二實施例之液晶顯示器結構的剖視圖。
參照所附圖式,將描述本發明的較佳實施例。相同的元件符號說明本說明書中的相似元件。然而,本發明不侷限於這些實施例,並且在不改變技術精神的情況下可以對本發明作出各種變換或修改。在下面的實施例中,元件的名稱係出於考慮其解釋的容易性而選擇,所以其不同於實際名稱。
<第一實施例>
參考圖4至圖8,將說明關於本發明的第一實施例。圖4係顯示根據本發明第一實施例之液晶顯示器結構的平面圖。圖5係顯示根據本發明第一實施例沿圖4的I-I'線剖切之液晶顯示器結構的剖視圖。圖6至圖8係顯示根據本發明第一實施例之彩色濾光片圖案的平面圖。
參考圖4和圖5,本發明第一實施例的液晶顯示器包括在一基板SUB上於第一(即,水平)方向上延伸的一閘極線GL以及於第二(即,垂直)方向上延伸的一資料線DL。當複數條閘極線GL與複數條資料線DL交叉時,複數個像素區域PA被定義為以一矩陣方式排列。在每一個像素區域中,設置一薄膜電晶體T以及連接至該薄膜電晶體T的一像素電極PXL。
像素區域PA包括表示視頻資料的一開口區域AP和不通過光的一非開口區域NP。在非開口區域NP,設置閘極線GL、資料線DL和薄膜電晶體T。在開口區域AP,設置像素電極PXL和共同電極COM。
在剖視圖中,一紅色濾光片CFR沉積在基板SUB上。此外,就平面圖而言,圖6係顯示沉積紅色濾光片CFR的區域的平面圖。如圖6所示,紅色濾光片CFR沉積在紅色像素區域PR的開口區域AP。另外,紅色濾光片CFR覆蓋除了藍色像素區域PB和綠色像素區域PG的開口區域AP之外的所有非開口區域NP。
在剖視圖中,一藍色濾光片CFB堆疊在紅色濾光片CFR上。就平面圖而言,圖7係顯示沉積藍色濾光片CFB的區域的平面圖。如圖7所示,藍色濾光片CFB沉積在藍色像素區域PB的開口區域AP。另外,藍色濾光片CFB覆蓋除了紅色像素區域PR和綠色像素區域PG的開口區域AP之外的所有非開口區域NP。因此,在非開口區域NP,藍色濾光片CFB直接堆疊在紅色濾光片CFR上。
在剖視圖中,在具有紅色濾光片CFR和藍色濾光片CFB的基板SUB的整個表面上,沉積一覆蓋層OC。由於堆疊的紅色濾光片CFR和藍色濾光片CFB,覆蓋層OC可以使基板SUB的不平坦表面變得平坦及/或平滑。
在覆蓋層OC上,可以沉積一緩衝層BUF。該緩衝層可以包括一有機材料。當在覆蓋層OC上直接形成薄膜電晶體時,在界面處可能會發生一些缺陷。為了防止這些缺陷,使用與有機材料及/或無機材料有良好界面性質的材料,在覆蓋層OC上形成緩衝層BUF。
在緩衝層BUF上,形成一半導體層A。一閘絕緣層GI和一閘極電極G形成在半導體層A的中間部分之上。閘絕緣層GI和閘極電極G具有相同的形狀。將半導體層A與閘極電極G的重疊區域定義為通道區。將通道區的一側區域定義為源極區域,將通道區的另一側區域定義為汲極區。
一綠色濾光片CFG沉積在具有半導體層A和閘極電極G的基板SUB上。就平面圖而言,圖8係顯示沉積綠色濾光片CFG的區域的平面圖。如圖8所示,綠色濾光片CFG設置在綠色像素區域PG的開口區域AP。另外,綠色濾光片CFG覆蓋除了藍色像素區域PB和紅色像素區域PR的開口區域AP之外的所有非開口區域NP。
當半導體層A和閘極電極G設置在非開口區域NP時,綠色濾光片CFG覆蓋所有半導體層A,而所有半導體層A設置在包括藍色像素區域PB、紅色像素區域PB和綠色像素區域PG的所有像素區域。綠色濾光片CFG具有用於暴露半導體層A的源極區域和汲極區的一些接觸孔。亦即,綠色濾光片CFG用於覆蓋閘極電極G的中間絕緣層。
在綠色濾光片CFG上,形成一資料線DL、一源極電極S和一汲極電極D。源極電極S從資料線DL伸出,並接觸半導體層A的源極區域。汲極電極D接觸半導體層A的汲極區。完成了薄膜電晶體T。
在薄膜電晶體T上,沉積一平面層PAC以覆蓋基板SUB的整個表面。在平面層PAC形成一像素接觸孔PH以暴露汲極電極D。在平面層PAC上形成一共同電極COM。共同電極COM可以是沉積在基板的整個表面上的一透明導電層。共同電極COM較佳不覆蓋像素接觸孔PH。
在共同電極COM上,沉積一鈍化層PAS以覆蓋基板SUB的整個表面。鈍化層PAS還具有用於暴露汲極電極D的像素接觸孔PH。在鈍化層PAS上,形成一像素電極PXL。像素電極PXL經由像素接觸孔PH接觸汲極電極D。
根據本發明之具有彩色濾光片CFR、CFG和CFB的薄膜電晶體基板具有其中紅色濾光片CFR、藍色濾光片CFB和綠色濾光片CFG依序堆疊在非開口區域NP的結構。因此,在沒有額外的黑色矩陣的情況下,堆疊的彩色濾光片CFR、CFB和CFG用作為每一個相鄰的兩個像素區域之間的黑色矩陣。另外,綠色濾光片CFG用作為閘極線GL與資料線DL之間的中間絕緣層。因此,不需要用來形成黑色矩陣和中間絕緣層所需的光罩製程。換言之,本發明的液晶顯示器的製程比習知技術減少了至少兩個光罩製程。可以縮短製造時間,提高製造產率。
紅色濾光片CFR、藍色濾光片CFB和綠色濾光片CFG與薄膜電 晶體T和像素電極PXL形成在同一基板SUB上。將彩色濾光片堆疊而形成為黑色矩陣。因此,不會發生未對準問題,從而不需考慮對準裕度。因此,可以確保最大值的開口率。
在上述說明中,解釋了彩色濾光片依照紅色、藍色和綠色的順序堆疊。但是,並未受到限於這種堆疊順序。若需要,堆疊順序可不相同。用作為中間絕緣層的彩色濾光片較佳為綠色濾光片CFG。綠色濾光片CFG優於其他彩色濾光片,用來形成暴露出半導體層A的源極區和汲極區的接觸孔。
<第二實施例>
現在,參考圖9,將解釋關於本發明的第二實施例。在第一實施例中,解釋了將綠色濾光片用於中間絕緣層的液晶顯示器的結構。在第二實施例中,將解釋包括額外的中間絕緣層的液晶顯示器的結構。圖9係顯示根據本發明第二實施例之液晶顯示器的剖視圖。
本發明第二實施例的液晶顯示器的結構與第一實施例非常相似。不同之處在於在綠色濾光片下方包括一額外的中間絕緣層。
如圖9所示,一紅色濾光片CFR首先沉積在一基板SUB上。紅色濾光片CFR具有與第一實施例相同的圖案。紅色濾光片CFR可以沉積在圖6中所示的加影線區域。例如,紅色濾光片CFR沉積在紅色像素區域PR的開口區域AP。另外,紅色濾光片CFR覆蓋除了藍色像素區域PB和綠色像素區域PG的開口區域AP之外的所有非開口區域NP。
在剖視圖中,一藍色濾光片CFB堆疊在紅色濾光片CFR上。藍色濾光片CFB具有與第一實施例相同的圖案。藍色濾光片CFB可以沉積在圖7中所示的加影線區域。例如,藍色濾光片CFB沉積在藍色像素區域PR的開口區域AP。另外,藍色濾光片CFB覆蓋除了紅色像素區域PR和綠色像素區域PG的開口區域AP之外的所有非開口區域NP。因此,在非開口區域NP,藍色濾光片CFB直接堆疊在紅色濾光片CFR上。
在剖視圖中,在具有紅色濾光片CFR和藍色濾光片CFB的基板SUB的整個表面上,沉積一覆蓋層OC。覆蓋層OC可以使由堆疊的紅色濾光片CFR和藍色濾光片CFB所造成的基板SUB的不平坦表面變得平坦及/或平滑。
在覆蓋層OC上,可以沉積一緩衝層BUF。覆蓋層OC可以包括 一有機材料。當在覆蓋層OC上直接形成薄膜電晶體時,在界面處可能會發生一些缺陷。為了防止這些缺陷,使用與有機材料及/或無機材料有良好界面性能的材料,在覆蓋層OC上形成緩衝層BUF。
在緩衝層BUF上,形成一半導體層A。一閘絕緣層GI和一閘極電極G形成在半導體層A的中間部分之上。閘絕緣層GI和閘極電極G具有相同的形狀。將半導體層A與閘極電極G的重疊區域定義為通道區。將通道區的一側區域定義為源極區,將通道區的另一側區域定義為汲極區。
一中間絕緣層IN沉積在具有半導體層A和閘極電極G的基板SUB上。一綠色濾光片CFG沉積在中間絕緣層IN上。綠色濾光片可以具有與第一實施例相同的圖案。就平面圖而言,圖8係顯示綠色濾光片CFG沉積的區域的平面圖。如圖8所示,綠色濾光片CFG設置在綠色像素區域PG的開口區域AP。另外,綠色濾光片CFG覆蓋除了藍色像素區域PB和紅色像素區域PR的開口區域AP之外的所有非開口區域NP。中間絕緣層IN可以覆蓋相同的區域,並且具有與綠色濾光片CFG相同的圖案。
在綠色濾光片CFG上,形成一資料線DL、一源極電極S和一汲極電極D。中間絕緣層IN和綠色濾光片CFG具有一些接觸孔,以暴露半導體層A的源極區和汲極區。源極電極S從資料線DL伸出,並接觸半導體層A的源極區。汲極電極D接觸半導體層A的汲極區。完成了薄膜電晶體T。
在薄膜電晶體T上,沉積一平面層PAC,以覆蓋基板SUB的整個表面。在平面層PAC上形成一像素接觸孔PH,以暴露汲極電極D。在平面層PAC上形成一共同電極COM。共同電極COM可以是沉積在基板的整個表面上的一透明導電層。較佳的是,共同電極COM不覆蓋像素接觸孔PH。
在共同電極COM上,沉積一鈍化層PAS,以覆蓋基板SUB的整個表面。鈍化層PAS亦具有像素接觸孔PH,以暴露汲極電極D。在鈍化層PAS上,形成一像素電極PXL。像素電極PXL經由像素接觸孔PH接觸汲極電極D。
根據本發明之具有彩色濾光片CFR、CFG和CFB的薄膜電晶體基板具有其中紅色濾光片CFR、藍色濾光片CFB和綠色濾光片CFG依序堆疊在非開口區域NP的結構。因此,在沒有額外的黑色矩陣的情況下,堆疊的彩色濾光片CFR、CFB和CFG用作為每一個相鄰的兩個像素區域之間的黑色矩陣。另 外,中間絕緣層IN堆疊在綠色濾光片CFG下方,並且與綠色濾光片CFG同時被圖案化,使得中間絕緣層IN與綠色濾光片CFG具有相同的形狀。因此,不需要用來形成黑色矩陣和中間絕緣層所需的光罩製程。換言之,本發明的液晶顯示器的製程比習知技術減少了至少兩個光罩製程。可以縮短製造時間,提高製造產率。
包括紅色濾光片CFR、藍色濾光片CFB和綠色濾光片CFG的彩色濾光片與薄膜電晶體T和像素電極PXL形成在同一基板SUB上。將彩色濾光片堆疊而形成為黑色矩陣。因此,不會發生未對準問題,從而不需考慮對準裕度。因此,可以確保最大值的開口率。
在上述說明中,解釋了彩色濾光片依照紅色、藍色和綠色的順序堆疊。但是,並未受到限於這種堆疊順序。若需要,堆疊順序可不相同。較佳地,沉積在中間絕緣層IN上方的彩色濾光片為綠色濾光片CFG。綠色濾光片CFG優於其他的彩色濾光片,用來形成暴露出半導體層A的源極區和汲極區的接觸孔。
雖然本發明的實施例參照所附圖式已詳細地描述,然可以理解的是任何該技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可以其他特別型式來實施本發明。因此,前述的實施例僅旨在描述本發明的各態樣,而不是限制本發明的技術。本發明之保護範圍當視後附之申請專利範圍所界定者為準,不受限於本發明的描述。在所附申請專利範圍及意義內所作的所有變化、修飾或其等同物均應構成為涵蓋在本發明的範圍內。
本申請案主張於2016年10月31日提交的韓國專利申請第10-2016-0144000號的優先權權益,該專利申請的全部內容在此通過引用併入本文中。

Claims (10)

  1. 一種薄膜電晶體基板,包括:複數個像素區域,以一矩陣方式設置在一基板上,每一個像素區域包括一開口區域和一非開口區域;一第一彩色濾光片和一第二彩色濾光片,堆疊在該基板上的該非開口區域;一覆蓋層,設置在該第一彩色濾光片和該第二彩色濾光片上;一半導體層,設置在該覆蓋層上的該非開口區域;一閘絕緣層和一閘極電極,堆疊在該半導體層的中間部分上;一第三彩色濾光片,位在該半導體層和該閘極電極上的該非開口區域;以及一源極電極和一汲極電極,設置在該第三彩色濾光片上。
  2. 如申請專利範圍第1項所述之薄膜電晶體基板,進一步包括:一平面層,位在該源極電極和該汲極電極上;一共同電極,位在該平面層上;一鈍化層,位在該共同電極上;以及一像素電極,與該鈍化層上的該汲極電極接觸。
  3. 如申請專利範圍第1項所述之薄膜電晶體基板,其中,該第一彩色濾光片、該第二彩色濾光片和該第三彩色濾光片中之每一者是紅色濾光片、綠色濾光片和藍色濾光片中之任一者。
  4. 如申請專利範圍第1項所述之薄膜電晶體基板,還包括:一閘極線,連接到該閘極電極且在該基板上沿一第一方向延伸;以及一資料線,連接到該源極電極且在該基板上沿一第二方向延伸,其中,該像素區域被定義為由該閘極線和該資料線所包圍的區域。
  5. 如申請專利範圍第2項所述之薄膜電晶體基板,其中,該共同電極包括一透明導電材料,該透明導電材料覆蓋該像素區域的該開口區域並覆蓋所有像素區域,以及其中,該像素電極包括該透明導電材料,該透明導電材料具有複數個區段,該等區段在該像素區域的該開口區域內以一預定距離彼此平行設置。
  6. 如申請專利範圍第1項所述之薄膜電晶體基板,其中,該像素區域包括一第一彩色像素區域、一第二彩色像素區域和一第三彩色像素區域。
  7. 如申請專利範圍第6項所述之薄膜電晶體基板,其中,該第一彩色濾光片進一步設置在該第一彩色像素區域的該開口區域,其中,該第二彩色濾光片進一步設置在該第二彩色像素區域的該開口區域,以及其中,該第三彩色濾光片進一步設置在該第三彩色像素區域的該開口區域。
  8. 如申請專利範圍第7項所述之薄膜電晶體基板,更包括:一中間絕緣層,位在該半導體層和該閘極電極上,且位在該第三彩色濾光片下。
  9. 如申請專利範圍第7項所述之薄膜電晶體基板,進一步包括:一緩衝層,位在該覆蓋層上,且位在該第三彩色濾光片下。
  10. 如申請專利範圍第8項所述之薄膜電晶體基板,進一步包括:一緩衝層,位在該覆蓋層上,且位在該第三彩色濾光片或該中間絕緣層下。
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US20180120613A1 (en) 2018-05-03
JP2018072838A (ja) 2018-05-10
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