CN107986975A - 一种有机发光化合物及其有机发光器件 - Google Patents

一种有机发光化合物及其有机发光器件 Download PDF

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CN107986975A
CN107986975A CN201711089076.6A CN201711089076A CN107986975A CN 107986975 A CN107986975 A CN 107986975A CN 201711089076 A CN201711089076 A CN 201711089076A CN 107986975 A CN107986975 A CN 107986975A
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organic luminescent
organic
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蔡辉
孙敬
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Changchun Haipurunsi Technology Co Ltd
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Changchun Haipurunsi Technology Co Ltd
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Abstract

本发明公开了一种有机发光化合物及其有机发光器件,涉及有机光电材料技术领域。本发明的有机发光化合物的共轭体系较大,因此具有较高的空穴迁移率,表现出较好的空穴传输性能,另外本发明的有机发光化合物还具有较好的热稳定性和溶解性,有利于材料成膜;应用本发明的有机发光化合物作为有机物层的有机发光器件,具有较低的驱动电压,较高的发光效率和发光亮度,并且具有较长的使用寿命。

Description

一种有机发光化合物及其有机发光器件
技术领域
本发明涉及有机光电材料技术领域,具体涉及一种有机发光化合物及其有机发光器件。
背景技术
有机光电材料是具有光子和电子的产生、转换和传输特性的有机材料。目前,有机光电材料已经应用于有机发光器件(Organic Light-Emitting Diode,OLED)。OLED是指有机光电材料在电流或电场的作用下发光的器件,它能够将电能直接转化为光能。近年来OLED作为新一代平板显示和固体照明技术正受到越来越多的关注。相比于液晶显示技术,OLED以其低功耗、主动发光、响应速度快、高对比度、无视角限制、可制作柔性显示等特点,越来越多的应用于显示及照明领域。
通常OLED具有多层结构,包括氧化铟锡(ITO)阳极和金属阴极以及置于ITO阳极与金属阴极之间的若干有机光电材料层,如空穴注入层(HIL)、空穴传输层(HTL)、发光材料层(EML)、电子传输层(ETL)和电子注入层(EIL)等。在一定电压驱动下,电子与空穴分别由阴极与阳极注入到电子传输层和空穴传输层,两者分别经过电子传输层和空穴传输层迁移到发光材料层,当两者在发光材料层中相遇结合时形成电子-空穴复合激子,激子通过发光弛豫的形式回到基态,从而达到发光的目的。
作为OLED中的空穴传输层,其基本作用是提高空穴在器件中的传输效率,并将电子有效地阻挡在发光层内,实现载流子的最大复合;同时降低空穴在注入过程中的能量壁垒,提高空穴的注入效率,从而提高器件的亮度、效率和寿命。
目前,有机发光器件通常存在操作电压高、发光效率低、使用寿命短等问题。因而,探索新的用于有机发光器件的有机光电材料是本领域技术人员一直以来研究的重点方向。对于空穴传输层来说,传统上所用的材料,通常无法提供令人满意的发光特性,因此,仍需要设计新的性能更好的空穴传输材料以提高有机发光器件的使用性能。
发明内容
发明目的:针对上述问题,本发明的目的是提供一种有机发光化合物及其有机发光器件,该化合物作为空穴传输材料应用在有机发光器件中,从而降低了有机发光器件的驱动电压,提高了有机发光器件的发光效率及亮度,并且延长了有机发光器件的使用寿命。
本发明的上述技术目的是通过以下技术方案实现的:一种有机发光化合物,该化合物具有如化学式I所示的结构通式:
其中,Ar1、Ar2独立的选自取代或未取代的C6~C60的芳基、取代或未取代的C3~C60 的杂芳基中的一种;
L选自取代或未取代的C6~C60的亚芳基、取代或未取代的C3~C60的杂亚芳基、取代或未取代的C3~C60的亚烯基、取代或未取代的C3~C60的亚炔基中的一种;
组分X选自由以下组成的群组:C(R)2、NR、P(O)R、PR、S、SO、SO2、Si(R)2和O,其中每个R独立的选自氢、未经取代的烷基、未经取代的芳基、未经取代的烷氧基中的一种。
优选的,Ar1、Ar2独立的选自取代或未取代的C6~C30的芳基、取代或未取代的C3~C30的杂芳基中的一种;
L选自取代或未取代的C6~C30的亚芳基、取代或未取代的C3~C30的杂亚芳基中的一种;
组分X选自由以下组成的群组:C(R)2、NR、P(O)R、PR、S、SO、SO2、Si(R)2和O,其中每个R独立的选自氢、未经取代的烷基、未经取代的芳基、未经取代的烷氧基中的一种。
最优选的,Ar1、Ar2独立的选自取代或未取代的苯基、取代或未取代的咔唑基、取代或未取代的萘基、取代或未取代的蒽基、取代或未取代的菲基、取代或未取代的芴基、取代或未取代的三联苯基、取代或未取代的联苯基、取代或未取代的三亚苯基、取代或未取代的螺二芴基、取代或未取代的吡啶基、取代或未取代的嘧啶基、取代或未取代的二苯并硅杂环戊二烯基、取代或未取代的三芳基胺基、取代或未取代的三芳基膦基、取代或未取代的三芳基硼基、取代或未取代的芘基、取代或未取代的茚基、取代或未取代的吲哚基、取代或未取代的呋喃基、取代或未取代的噻吩基、取代或未取代的二苯并噻吩基、取代或未取代的二苯并呋喃基、取代或未取代的喹啉基。
优选的,本发明的有机发光化合物选自如下所示化学结构中的一种:
本发明还提供了一种有机发光器件,该有机发光器件包括阴极、阳极以及一个或多个有机物层,有机物层位于阴极和阳极之间,有机物层中的至少一层含有本发明的有机发光化合物。
优选的,有机物层包括空穴传输层,空穴传输层包含本发明的有机发光化合物。
有益效果:与现有技术相比,本发明的优点是,本发明的有机发光化合物的共轭体系较大,因此具有较高的空穴迁移率,表现出较好的空穴传输性能,另外本发明的有机发光化合物还具有较好的热稳定性和溶解性,有利于材料成膜;应用本发明的有机发光化合物作为有机物层的有机发光器件,具有较低的驱动电压,较高的发光效率和发光亮度,并且具有较长的使用寿命。
具体实施方式
下面结合具体实施例,进一步阐明本发明,应理解这些实施例仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
一种有机发光化合物,该化合物具有如化学式I所示的结构通式:
其中,Ar1、Ar2独立的选自取代或未取代的C6~C60的芳基、取代或未取代的C3~C60 的杂芳基中的一种;
L选自取代或未取代的C6~C60的亚芳基、取代或未取代的C3~C60的杂亚芳基、取代或未取代的C3~C60的亚烯基、取代或未取代的C3~C60的亚炔基中的一种;
组分X选自由以下组成的群组:C(R)2、NR、P(O)R、PR、S、SO、SO2、Si(R)2和O,其中每个R独立的选自氢、未经取代的烷基、未经取代的芳基、未经取代的烷氧基中的一种。
优选的,Ar1、Ar2独立的选自取代或未取代的C6~C30的芳基、取代或未取代的C3~C30的杂芳基中的一种;
L选自取代或未取代的C6~C30的亚芳基、取代或未取代的C3~C30的杂亚芳基中的一种;
组分X选自由以下组成的群组:C(R)2、NR、P(O)R、PR、S、SO、SO2、Si(R)2和O,其中每个R独立的选自氢、未经取代的烷基、未经取代的芳基、未经取代的烷氧基中的一种。
最优选的,Ar1、Ar2独立的选自取代或未取代的苯基、取代或未取代的咔唑基、取代或未取代的萘基、取代或未取代的蒽基、取代或未取代的菲基、取代或未取代的芴基、取代或未取代的三联苯基、取代或未取代的联苯基、取代或未取代的三亚苯基、取代或未取代的螺二芴基、取代或未取代的吡啶基、取代或未取代的嘧啶基、取代或未取代的二苯并硅杂环戊二烯基、取代或未取代的三芳基胺基、取代或未取代的三芳基膦基、取代或未取代的三芳基硼基、取代或未取代的芘基、取代或未取代的茚基、取代或未取代的吲哚基、取代或未取代的呋喃基、取代或未取代的噻吩基、取代或未取代的二苯并噻吩基、取代或未取代的二苯并呋喃基、取代或未取代的喹啉基。
按照本发明,上述Ar1、Ar2上的取代基独立的选自氢、氘、氨基、烷基氨基、羟基、酰胺基、酰氧基、C1~C10的烷氧基、C1~C10的烷基、C3~C20的环烷基、C6~C24的芳基、 C6~C24的芳氧基、C6~C24的芳硫基、C3~C24的杂芳基、C3~C20的杂环基;
L上的取代基选自氢、C1~C10的烷氧基、C1~C10的烷基、C3~C20的环烷基、C6~C24的芳基、C6~C24的芳氧基、C6~C24的芳硫基、C3~C24的杂芳基、C3~C20的杂环基。
本发明所述芳基是指芳烃分子的芳核碳上少掉一个氢原子后,剩下一价基团的总称,其可以为单环芳基或稠环芳基,实例可包括苯基、联苯基、萘基、蒽基、菲基或芘基等,但不限于此。
本发明所述杂芳基是指芳基中的一个或多个芳核碳被杂原子替代得到的基团的总称,所述杂原子包括但不限于氧、硫或氮原子,所述杂芳基可以为单环杂芳基或稠环杂芳基,实例可包括吡啶基、吡咯基、吡啶基、噻吩基、呋喃基、吲哚基、喹啉基、异喹啉基、苯并噻吩基、苯并呋喃基、二苯并呋喃基、二苯并噻吩基、咔唑基等,但不限于此。
本发明所述亚芳基是指芳烃分子的两个芳核碳上分别少掉一个氢原子后,剩下二价基团的总称,其可以为单环亚芳基或稠环亚芳基,实例可包括亚苯基、亚联苯基、亚萘基、亚蒽基、亚菲基或亚芘基等,但不限于此。
本发明所述杂亚芳基是指亚芳基中的一个或多个芳核碳被杂原子替代得到的基团的总称,所述杂原子包括但不限于氧、硫或氮原子,所述杂亚芳基可以为单环杂亚芳基或稠环杂亚芳基,实例可包括亚吡啶基、亚吡咯基、亚吡啶基、亚噻吩基、亚呋喃基、亚吲哚基、亚喹啉基、亚异喹啉基、亚苯并噻吩基、亚苯并呋喃基、亚二苯并呋喃基、亚二苯并噻吩基、亚咔唑基等,但不限于此。
本发明所述亚烯基是指烯烃分子中共轭体系两端的碳原子分别少掉一个氢原子而成的亚烃基,所述亚烯基可以为亚单烯基、亚二烯基等,但不限于此。
本发明所述亚炔基是指炔烃分子中共轭体系两端的碳原子分别少掉一个氢原子而成的亚烃基,所述亚炔基可以为亚单炔基、亚二炔基等,但不限于此。
本发明所述烷基是指烷烃分子中少掉一个氢原子而成的烃基,其可以为直链烷基、支链烷基、环烷基,实例可包括甲基、乙基、丙基、异丙基、正丁基、异丁基、仲丁基、叔丁基、戊基、异戊基、环戊基、环己基等,但不限于此。
本发明所述烷氧基是指-O-烷基,其中所述烷基如前定义。
作为举例,没有特别限定,本发明的有机发光化合物选自如下所示化学结构中的一种:
本发明的有机发光化合物的合成路线如下所示:
其中,Ar1、Ar2独立的选自取代或未取代的C6~C60的芳基、取代或未取代的C3~C60 的杂芳基中的一种;
L选自取代或未取代的C6~C60的亚芳基、取代或未取代的C3~C60的杂亚芳基、取代或未取代的C3~C60的亚烯基、取代或未取代的C3~C60的亚炔基中的一种;
组分X选自由以下组成的群组:C(R)2、NR、P(O)R、PR、S、SO、SO2、Si(R)2和O,其中每个R独立的选自氢、未经取代的烷基、未经取代的芳基、未经取代的烷氧基中的一种。
上述有机发光化合物的合成步骤如下:
(1)向圆底烧瓶中依次加入化合物I、化合物II、t-BuONa、Pd(OAc)2以及超声除氧的甲苯,在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用 MgSO4干燥,减压蒸去溶剂,得到化合物III的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III。
(2)将化合物III加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi,反应0.5h后,向反应液中快速滴加硼酸三甲脂,将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV。
(3)将化合物V加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼,在80℃的条件下反应2h后,向反应液中依次加入化合物IV和K2CO3,回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化学式I的产品。
对本发明的有机发光化合物的合成路线没有特殊限制,可以采用本领域技术人员所熟知的常规反应即可。
本发明还提供了一种有机发光器件,该有机发光器件包括阴极、阳极以及一个或多个有机物层,有机物层位于阴极和阳极之间,有机物层中的至少一层含有上述本发明的有机发光化合物。
本发明的有机发光器件的有机物层具有单层结构,或可选择性地具有其中两个或更多个有机物层分层的多层结构。本发明的有机发光器件可具有空穴注入层、空穴传输层、发光材料层、电子传输层、电子注入层或置于阳极和空穴注入层之间的缓冲层作为有机物层。然而,有机发光器件的结构不限于此,但是可包括较少数量的有机物层。含有本发明的有机发光化合物的有机物层的厚度不高于6μm,优选为不高于0.3μm,且更优选为0.002~0.3μm。如果需要,含有本发明的有机发光化合物的有机物层可进一步包含本领域中已知的能进行空穴注入、空穴传输、发光、电子传输和电子注入的其它材料。
本发明的有机发光器件可以使用已知材料通过已知方法制备,仅可以在一层或多层有机物层中包含本发明的有机发光化合物。
本发明的有机发光化合物具体可以作为制备有机发光器件的空穴传输层。采用的有机发光器件优选为:附着在透光玻璃上的ITO作为阳极,空穴注入层,本发明的有机发光化合物作为空穴传输层,发光材料层,空穴阻挡层,电子传输层,电子注入层,金属阴极。
本发明的有机发光器件可广泛应用于平板显示、固体照明、有机感光体或有机薄膜晶体管等领域。
本发明对以下实施例中所采用的原料没有特别的限制,可以为市售产品或采用本领域技术人员所熟知的制备方法制备得到。
实施例1:
化合物III-1的制备
向圆底烧瓶中依次加入化合物I-1(12.5g,73.8mmol)、化合物II-1(20.9g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-1的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-1(18.7g,78%)。质谱m/z:理论值:324.22;实测值:326.31。理论元素含量(%)C18H14BrN:C,66.68;H,4.35;Br,24.64;N,4.32;实测元素含量(%):C,66.64; H,4.38;Br,24.62;N,4.31。上述结果证实获得产物为目标产品。
化合物IV-1的制备
将化合物III-1(16.2g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-1(10.8g,75%)。质谱m/z:理论值:289.14;实测值:291.14。理论元素含量(%)C18H16BNO2: C,74.77;H,5.58;B,3.74;N,4.84;O,11.07;实测元素含量(%):C,74.75;H,5.61;B,3.72;N,4.83;O,11.04。上述结果证实获得产物为目标产品。
化合物TM1的制备
将化合物V-1(6.7g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-1 (13.0g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM1(10.8g,80%)。质谱m/z:理论值:451.61;实测值:453.79。理论元素含量(%)C34H29N:C,90.43;H,6.47;N,3.10;实测元素含量(%):C,90.41;H,6.53;N,3.07。上述结果证实获得产物为目标产品。
实施例2:
向圆底烧瓶中依次加入化合物I-2(23.7g,73.8mmol)、化合物II-2(20.9g,73.8mmol)、t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-2的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-2(28.8g,82%)。质谱m/z:理论值:476.41;实测值:478.54。理论元素含量(%)C30H22BrN:C,75.63;H,4.65;Br,16.77;N,2.94;实测元素含量(%):C,75.61; H,4.68;Br,16.75;N,2.93。上述结果证实获得产物为目标产品。
化合物IV-2的制备
将化合物III-2(23.8g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-2(16.3g,74%)。质谱m/z:理论值:441.33;实测值:443.47。理论元素含量(%)C30H24BNO2: C,81.64;H,5.48;B,2.45;N,3.17;O,7.25;实测元素含量(%):C,81.61;H,5.52;B,2.43;N,3.16; O,7.23。上述结果证实获得产物为目标产品。
化合物TM2的制备
将化合物V-2(6.7g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-2 (19.8g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM2(15.2g,84%)。质谱m/z:理论值:603.81;实测值:605.94。理论元素含量(%)C46H37N:C,91.50;H,6.18;N,2.32;实测元素含量(%):C,91.45;H,6.25;N,2.30。上述结果证实获得产物为目标产品。
实施例3:
化合物III-3的制备
向圆底烧瓶中依次加入化合物I-3(19.9g,73.8mmol)、化合物II-3(20.9g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-3的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-3(23.5g,75%)。质谱m/z:理论值:424.33;实测值:426.47。理论元素含量(%)C26H18BrN:C,73.59;H,4.28;Br,18.83;N,3.30;实测元素含量(%):C,73.54; H,4.31;Br,18.82;N,3.27。上述结果证实获得产物为目标产品。
化合物IV-3的制备
将化合物III-3(21.2g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-3(13.8g,71%)。质谱m/z:理论值:389.25;实测值:391.31。理论元素含量(%)C26H20BNO2: C,80.22;H,5.18;B,2.78;N,3.60;O,8.22;实测元素含量(%):C,80.18;H,5.22;B,2.77;N,3.59; O,8.21。上述结果证实获得产物为目标产品。
化合物TM3的制备
将化合物V-3(6.7g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-3 (17.5g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM3(13.2g,80%)。质谱m/z:理论值:551.73;实测值:553.87。理论元素含量(%)C42H33N:C,91.43;H,6.03;N,2.54;实测元素含量(%):C,91.40;H,6.08;N,2.52。上述结果证实获得产物为目标产品。
实施例4:
化合物III-10的制备
向圆底烧瓶中依次加入化合物I-10(23.4g,73.8mmol)、化合物II-10(20.9g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-10的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-10(27.5g,79%)。质谱m/z:理论值:471.40;实测值:473.52。理论元素含量(%)C27H23BrN2O:C,68.79;H,4.92;Br,16.95;N,5.94;O,3.39;实测元素含量(%):C,68.76;H,5.00;Br,16.94;N,5.92;O,3.37。上述结果证实获得产物为目标产品。
化合物IV-10的制备
将化合物III-10(23.6g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-10 (16.8g,77%)。质谱m/z:理论值:436.32;实测值:438.44。理论元素含量(%)C27H25BN2O3: C,74.33;H,5.78;B,2.48;N,6.42;O,11.00;实测元素含量(%):C,74.31;H,5.81;B,2.46;N, 6.41;O,11.02。上述结果证实获得产物为目标产品。
化合物TM10的制备
将化合物V-10(6.7g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-10(19.6g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM10(14.6g,81%)。质谱m/z:理论值:598.79;实测值:599.88。理论元素含量(%)C43H38N2O:C,86.25;H,6.40;N, 4.68;O,2.67;实测元素含量(%):C,86.21;H,6.47;N,4.67;O,2.65。上述结果证实获得产物为目标产品。
实施例5:
化合物III-38的制备
向圆底烧瓶中依次加入化合物I-38(19.9g,73.8mmol)、化合物II-38(26.5g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-38的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-38(27.3g,74%)。质谱m/z:理论值:500.44;实测值:502.56。理论元素含量(%)C32H22BrN:C,76.80;H,4.43;Br,15.97;N,2.80;实测元素含量(%):C,76.77; H,4.49;Br,15.95;N,2.79。上述结果证实获得产物为目标产品。
化合物IV-38的制备
将化合物III-38(25.0g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-38 (17.0g,73%)。质谱m/z:理论值:465.36;实测值:467.41。理论元素含量(%)C32H24BNO2:C,82.59;H,5.20;B,2.32;N,3.01;O,6.88;实测元素含量(%):C,82.57;H,5.25;B,2.31;N,3.02; O,6.85。上述结果证实获得产物为目标产品。
化合物TM38的制备
将化合物V-38(6.7g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-38(20.9g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM38(15.6g,83%)。质谱m/z:理论值:627.83;实测值:629.96。理论元素含量(%)C48H37N:C,91.83;H,5.94;N,2.23;实测元素含量(%):C,91.81;H,5.97;N,2.22。上述结果证实获得产物为目标产品。
实施例6:
化合物III-41的制备
向圆底烧瓶中依次加入化合物I-41(26.1g,73.8mmol)、化合物II-41(33.1g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-41的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-41(38.3g,77%)。质谱m/z:理论值:673.70;实测值:675.87。理论元素含量(%)C44H37BrN2:C,78.45;H,5.54;Br,11.86;N,4.16;实测元素含量(%):C,78.44; H,5.59;Br,11.83;N,4.15。上述结果证实获得产物为目标产品。
化合物IV-41的制备
将化合物III-41(33.7g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-41 (24.3g,76%)。质谱m/z:理论值:638.62;实测值:640.77。理论元素含量(%)C44H39BN2O2: C,82.75;H,6.16;B,1.69;N,4.39;O,5.01;实测元素含量(%):C,82.71;H,6.22;B,1.68;N,4.36; O,5.03。上述结果证实获得产物为目标产品。
化合物TM41的制备
将化合物V-41(6.7g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-41(28.7g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM41(20.2g,84%)。质谱m/z:理论值:801.09;实测值:803.16。理论元素含量(%)C60H52N2:C,89.96;H,6.54;N, 3.50;实测元素含量(%):C,89.93;H,6.61;N,3.46。上述结果证实获得产物为目标产品。
实施例7:
化合物III-44的制备
向圆底烧瓶中依次加入化合物I-44(18.2g,73.8mmol)、化合物II-44(38.0g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-44的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-44(34.1g,73%)。质谱m/z:理论值:633.63;实测值:635.75。理论元素含量(%)C41H33BrN2:C,77.72;H,5.25;Br,12.61;N,4.42;实测元素含量(%):C,77.70; H,5.31;Br,12.59;N,4.40。上述结果证实获得产物为目标产品。
化合物IV-44的制备
将化合物III-44(31.7g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-44 (22.1g,74%)。质谱m/z:理论值:598.55;实测值:599.73。理论元素含量(%)C41H35BN2O2: C,82.27;H,5.89;B,1.81;N,4.68;O,5.35;实测元素含量(%):C,82.23;H,5.95;B,1.83;N,4.65; O,5.34。上述结果证实获得产物为目标产品。
化合物TM44的制备
将化合物V-44(6.7g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-44(26.9g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM44(18.5g,81%)。质谱m/z:理论值:761.03;实测值:763.17。理论元素含量(%)C57H48N2:C,89.96;H,6.36;N, 3.68;实测元素含量(%):C,89.93;H,6.12;N,3.65。上述结果证实获得产物为目标产品。
实施例8:
化合物III-51的制备
向圆底烧瓶中依次加入化合物I-51(31.1g,73.8mmol)、化合物II-51(30.6g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-51的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-51(39.8g,76%)。质谱m/z:理论值:708.77;实测值:710.82。理论元素含量(%)C46H34BrNSi:C,77.95;H,4.84;Br,11.27;N,1.98;Si,3.96;实测元素含量 (%):C,77.91;H,4.93;Br,11.25;N,1.96;Si,3.95。上述结果证实获得产物为目标产品。
化合物IV-51的制备
将化合物III-51(35.4g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-51 (25.3g,75%)。质谱m/z:理论值:673.69;实测值:675.73。理论元素含量(%)C46H36BNO2Si:C,82.01;H,5.39;B,1.60;N,2.08;O,4.75;Si,4.17;实测元素含量(%):C,82.03;H,5.14;B,1.58; N,2.05;O,4.74;Si,4.16。上述结果证实获得产物为目标产品。
化合物TM51的制备
将化合物V-51(9.1g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-51(30.3g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM51(22.3g,81%)。质谱m/z:理论值:918.16;实测值:920.21。理论元素含量(%)C65H48NOPSi:C,85.03;H,5.27; N,1.53;O,1.74;P,3.37;Si,3.06;实测元素含量(%):C,85.02;H,5.33;N,1.51;O,1.75;P,3.35;Si,3.05。上述结果证实获得产物为目标产品。
实施例9:
化合物III-62的制备
向圆底烧瓶中依次加入化合物I-62(19.9g,73.8mmol)、化合物II-62(38.0g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-62的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-62(37.3g,77%)。质谱m/z:理论值:656.67;实测值:658.73。理论元素含量(%)C44H34BrN:C,80.48;H,5.22;Br,12.17;N,2.13;实测元素含量(%):C,80.47; H,5.26;Br,12.15;N,2.12。上述结果证实获得产物为目标产品。
化合物IV-62的制备
将化合物III-62(32.8g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-62 (22.7g,73%)。质谱m/z:理论值:621.59;实测值:623.62。理论元素含量(%)C44H36BNO2:C,85.02;H,5.84;B,1.74;N,2.25;O,5.15;实测元素含量(%):C,85.01;H,5.89;B,1.73;N,2.23; O,5.14。上述结果证实获得产物为目标产品。
化合物TM62的制备
将化合物V-62(6.4g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-62(28.0g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM62(19.0g,82%)。质谱m/z:理论值:774.04;实测值:776.16。理论元素含量(%)C57H43NS:C,88.45;H,5.60;N, 1.81;S,4.14;实测元素含量(%):C,88.43;H,5.65;N,1.79;S,4.13。上述结果证实获得产物为目标产品。
实施例10:
化合物III-65的制备
向圆底烧瓶中依次加入化合物I-65(29.6g,73.8mmol)、化合物II-65(28.3g,73.8mmol)、t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-65的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-65(38.8g,80%)。质谱m/z:理论值:656.67;实测值:658.83。理论元素含量(%)C44H34BrN:C,80.48;H,5.22;Br,12.17;N,2.13;实测元素含量(%):C,80.46; H,5.26;Br,12.16;N,2.12。上述结果证实获得产物为目标产品。
化合物IV-65的制备
将化合物III-65(32.8g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-65 (23.3g,75%)。质谱m/z:理论值:621.59;实测值:623.63。理论元素含量(%)C44H36BNO2:C,85.02;H,5.84;B,1.74;N,2.25;O,5.15;实测元素含量(%):C,85.01;H,5.90;B,1.72;N,2.24; O,5.12。上述结果证实获得产物为目标产品。
化合物TM65的制备
将化合物V-65(6.4g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-65(28.0g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM65(19.0g,82%)。质谱m/z:理论值:774.04;实测值:776.13。理论元素含量(%)C57H43NS:C,88.45;H,5.60;N, 1.81;S,4.14;实测元素含量(%):C,88.43;H,5.67;N,1.88;S,4.11。上述结果证实获得产物为目标产品。
实施例11:
化合物III-75的制备
向圆底烧瓶中依次加入化合物I-75(31.1g,73.8mmol)、化合物II-75(26.5g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-75的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-75(35.6g,74%)。质谱m/z:理论值:652.64;实测值:654.75。理论元素含量(%)C44H30BrN:C,80.98;H,4.63;Br,12.24;N,2.15;实测元素含量(%):C,80.95; H,4.69;Br,12.23;N,2.14。上述结果证实获得产物为目标产品。
化合物IV-75的制备
将化合物III-75(32.6g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-75 (22.2g,72%)。质谱m/z:理论值:617.56;实测值:619.67。理论元素含量(%)C44H32BNO2:C,85.58;H,5.22;B,1.75;N,2.27;O,5.18;实测元素含量(%):C,85.57;H,5.28;B,1.73;N,2.26; O,5.16。上述结果证实获得产物为目标产品。
化合物TM75的制备
将化合物V-75(7.3g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-75(27.8g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM75(20.4g,85%)。质谱m/z:理论值:802.00;实测值:804.13。理论元素含量(%)C57H39NO2S:C,85.36;H,4.90; N,1.75;O,3.99;S,4.00;实测元素含量(%):C,85.34;H,4.93;N,1.73;O,3.98;S,4.02。上述结果证实获得产物为目标产品。
实施例12:
化合物III-82的制备
向圆底烧瓶中依次加入化合物I-82(30.7g,73.8mmol)、化合物II-82(26.5g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-82的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-82(35.4g,74%)。质谱m/z:理论值:647.66;实测值:649.72。理论元素含量(%)C42H35BrN2:C,77.89;H,5.45;Br,12.34;N,4.33;实测元素含量(%):C,77.86; H,5.51;Br,12.33;N,4.31。上述结果证实获得产物为目标产品。
化合物IV-82的制备
将化合物III-82(32.4g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-82 (22.4g,73%)。质谱m/z:理论值:612.58;实测值:614.62。理论元素含量(%)C42H37BN2O2: C,82.35;H,6.09;B,1.76;N,4.57;O,5.22;实测元素含量(%):C,82.33;H,6.15;B,1.75;N,4.55; O,5.21。上述结果证实获得产物为目标产品。
化合物TM82的制备
将化合物V-82(8.1g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-82(27.6g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM82(20.0g,81%)。质谱m/z:理论值:824.08;实测值:826.15。理论元素含量(%)C61H49N3:C,88.91;H,5.99;N, 5.10;实测元素含量(%):C,88.89;H,6.03;N,5.08。上述结果证实获得产物为目标产品。
实施例13:
化合物III-89的制备
向圆底烧瓶中依次加入化合物I-89(27.8g,73.8mmol)、化合物II-89(30.2g,73.8mmol)、 t-BuONa(10.7g,111mmol)、Pd(OAc)2(0.33g,1.47mmol)以及超声除氧的甲苯(1.5L),在氮气保护下回流过夜,待反应液冷却后用乙酸乙酯和水处理,并将得到的有机层用MgSO4干燥,减压蒸去溶剂,得到化合物III-89的粗品,以硅胶为固定相,二氯甲烷/己烷为洗脱剂,将粗品进行柱层析,得到化合物III-89(38.3g,79%)。质谱m/z:理论值:657.66;实测值:658.70。理论元素含量(%)C43H33BrN2:C,78.53;H,5.06;Br,12.15;N,4.26;实测元素含量(%):C,78.50; H,5.12;Br,12.14;N,4.24。上述结果证实获得产物为目标产品。
化合物IV-89的制备
将化合物III-89(32.9g,50mmol)加入到圆底烧瓶中,再加入适量的无水THF使其溶解,在-78℃的温度下,向反应瓶中滴加n-BuLi(4.9ml,60mmol),反应0.5h后,向反应液中快速滴加硼酸三甲脂(7.8g,75mmol),将温度缓慢升至室温,继续反应30min,反应完毕后,将反应液倒入稀盐酸水溶液中,有固体物质析出并将其过滤,粗品过硅胶柱得到化合物IV-89 (23.6g,76%)。质谱m/z:理论值:622.58;实测值:624.67。理论元素含量(%)C43H35BN2O2: C,82.96;H,5.67;B,1.74;N,4.50;O,5.14;实测元素含量(%):C,82.92;H,5.75;B,1.73;N,4.48; O,5.13。上述结果证实获得产物为目标产品。
化合物TM89的制备
将化合物V-89(8.1g,30mmol)加入到圆底烧瓶中,再加入甲苯使其溶解,向溶液中加入对甲苯磺酰肼(8.4g,45mmol),在80℃的条件下反应2h后,向反应液中依次加入化合物IV-89(28.0g,45mmol)和K2CO3(12.4g,90mmol),回流反应5h,将反应液冷却至室温,用去离子水洗涤反应液,有机相经干燥、浓缩、柱层析,得到化合物TM89(20.8g,83%)。质谱m/z:理论值:834.08;实测值:836.31。理论元素含量(%)C62H47N3:C,89.28;H,5.68;N, 5.04;实测元素含量(%):C,89.25;H,5.72;N,5.03。上述结果证实获得产物为目标产品。
参照上述实施例1-13的合成方法合成其他目标产物。
应用实施例1:发光器件1的制备
选取ITO玻璃为阳极,超声清洗后干燥至于真空腔中,抽真空至5×10-5Pa,在上述阳极基板上真空蒸镀2T-NATA作为空穴注入层,蒸镀厚度为10nm。在空穴注入层上真空蒸镀本发明的化合物TM2作为空穴传输层,蒸镀厚度为30nm。在空穴传输层上真空蒸镀ADN作为发光材料层主体,2%的DPAVB作为掺杂,蒸镀厚度为45nm。在发光材料层上真空蒸镀 BAlq作为空穴阻挡层,蒸镀厚度为10nm。在空穴阻挡层上真空蒸镀Alq3作为电子注入层,蒸镀厚度为40nm。在电子注入层上蒸镀0.2nm的LiF以及150nm的Al作为阴极。
应用实施例2:发光器件2的制备
将应用实施例1中的化合物TM2换成化合物TM10。
应用实施例3:发光器件3的制备
将应用实施例1中的化合物TM2换成化合物TM41。
应用实施例4:发光器件4的制备
将应用实施例1中的化合物TM2换成化合物TM65。
应用实施例5:发光器件5的制备
将应用实施例1中的化合物TM2换成化合物TM82。
对比实施例1
选取ITO玻璃为阳极,超声清洗后干燥至于真空腔中,抽真空至5×10-5Pa,在上述阳极基板上真空蒸镀2T-NATA作为空穴注入层,蒸镀厚度为10nm。在空穴注入层上真空蒸镀NPB作为空穴传输层,蒸镀厚度为30nm。在空穴传输层上真空蒸镀ADN作为发光材料层主体,2%的DPAVB作为掺杂,蒸镀厚度为45nm。在发光材料层上真空蒸镀BAlq作为空穴阻挡层,蒸镀厚度为10nm。在空穴阻挡层上真空蒸镀Alq3作为电子注入层,蒸镀厚度为40 nm。在电子注入层上蒸镀0.2nm的LiF以及150nm的Al作为阴极。本发明应用实施例1- 5以及对比实施例1制备的发光器件的发光特性测试结果如表2所示。
表2
从表2中可以看出,本发明的芴类衍生物作为空穴传输材料应用到有机发光器件中,该有机发光器件表现出较低的驱动电压,较高的发光效率和较长的使用寿命,并且具有较好的耐久性和可靠性。

Claims (6)

1.一种有机发光化合物,其特征在于,该化合物具有如化学式I所示的结构通式:
其中,Ar1、Ar2独立的选自取代或未取代的C6~C60的芳基、取代或未取代的C3~C60的杂芳基中的一种;
L选自取代或未取代的C6~C60的亚芳基、取代或未取代的C3~C60的杂亚芳基、取代或未取代的C3~C60的亚烯基、取代或未取代的C3~C60的亚炔基中的一种;
组分X选自由以下组成的群组:C(R)2、NR、P(O)R、PR、S、SO、SO2、Si(R)2和O,其中每个R独立的选自氢、未经取代的烷基、未经取代的芳基、未经取代的烷氧基中的一种。
2.根据权利要求1所述的一种有机发光化合物,其特征在于,所述Ar1、Ar2独立的选自取代或未取代的C6~C30的芳基、取代或未取代的C3~C30的杂芳基中的一种;
所述L选自取代或未取代的C6~C30的亚芳基、取代或未取代的C3~C30的杂亚芳基中的一种;
所述组分X选自由以下组成的群组:C(R)2、NR、P(O)R、PR、S、SO、SO2、Si(R)2和O,其中每个R独立的选自氢、未经取代的烷基、未经取代的芳基、未经取代的烷氧基中的一种。
3.根据权利要求1所述的一种有机发光化合物,其特征在于,所述Ar1、Ar2独立的选自取代或未取代的苯基、取代或未取代的咔唑基、取代或未取代的萘基、取代或未取代的蒽基、取代或未取代的菲基、取代或未取代的芴基、取代或未取代的三联苯基、取代或未取代的联苯基、取代或未取代的三亚苯基、取代或未取代的螺二芴基、取代或未取代的吡啶基、取代或未取代的嘧啶基、取代或未取代的二苯并硅杂环戊二烯基、取代或未取代的三芳基胺基、取代或未取代的三芳基膦基、取代或未取代的三芳基硼基、取代或未取代的芘基、取代或未取代的茚基、取代或未取代的吲哚基、取代或未取代的呋喃基、取代或未取代的噻吩基、取代或未取代的二苯并噻吩基、取代或未取代的二苯并呋喃基、取代或未取代的喹啉基。
4.根据权利要求1所述的一种有机发光化合物,其特征在于,所述有机发光化合物选自如下所示化学结构中的一种:
5.一种有机发光器件,其特征在于,所述有机发光器件包括阴极、阳极以及一个或多个有机物层,所述有机物层位于阴极和阳极之间,所述有机物层中的至少一层含有权利要求1-4任意一项所述的有机发光化合物。
6.根据权利要求5所述的一种有机发光器件,其特征在于,所述有机物层包括空穴传输层,所述空穴传输层包含权利要求1-4任意一项所述的有机发光化合物。
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