CN107958893B - 改进的扇出球栅阵列封装结构及其制造方法 - Google Patents

改进的扇出球栅阵列封装结构及其制造方法 Download PDF

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CN107958893B
CN107958893B CN201710941145.5A CN201710941145A CN107958893B CN 107958893 B CN107958893 B CN 107958893B CN 201710941145 A CN201710941145 A CN 201710941145A CN 107958893 B CN107958893 B CN 107958893B
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core
substantially planar
package
semiconductor device
electrical
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CN107958893A (zh
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叶俊良
王盟仁
蔡宗岳
洪志明
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

本发明提供一种表面安装结构，其包括重布结构、电连接件及封装体。所述重布结构具有第一表面及与所述第一表面相对的第二表面。所述电连接件在所述重布结构的所述第一表面上。所述封装体囊封所述重布结构的所述第一表面及所述电连接件。所述电连接件的一部分通过所述封装体暴露。

Description

改进的扇出球栅阵列封装结构及其制造方法
相关申请案的交叉参考
本申请案请求于2016年10月17日申请的美国临时专利申请案62/409,252的权益及优先权，所述申请案以全文引用的方式并入本文中。
技术领域
本发明一般涉及一种扇出球栅阵列(BGA)封装结构，且更确切地说，涉及具有较小厚度、具有条带型扇出BGA结构及具有低制造成本的封装结构。
背景技术
半导体装置封装持续受到电子产品的设计者及制造商的大量关注。所述关注是基于对于效率更大、性能更高及尺寸更小的电子产品的市场需求。
开发BGA封装以期满足对于具有较高导线计数及较小占据面积的封装的需求。BGA封装通常为正方形封装，其末端呈自所述封装的底部突起的焊球阵列的形式。这些末端经设计为安装在位于印刷电路板的表面上的多个垫或其它互连件上。BGA的迹线通常制造于层压衬底(例如，基于双马来酰亚胺三嗪(BT)的衬底)或基于聚酰亚胺的薄膜上。因此，这种衬底或薄膜的整个区域可用于路由互连。BGA的优势为更低的接地电感或电力电感，由此经由较短电流路径将接地网或电力网分配至印刷电路板(PCB)。热增强型机构(散热片、热球等)可应用于BGA以减小热阻。BGA封装技术的功能能力使指定增强型电及热性能的高功率及高速集成芯片(IC)受益。
发明内容
在一些实施例中，表面安装结构包括重布结构、电连接件及封装体。所述重布结构具有第一表面及与所述第一表面相对的第二表面。所述电连接件在所述重布结构的所述第一表面上。所述封装体囊封所述重布结构的第一表面及所述电连接件。所述电连接件的一部分通过所述封装体暴露。
在一些实施例中，半导体装置封装将通过表面安装技术安装于外部电路板上。所述半导体装置封装包括重布结构、半导体装置、电连接件及封装体。所述重布结构具有第一表面及与所述第一表面相对的第二表面。所述半导体装置在所述重布结构的第一表面上。所述电连接件在所述重布结构的第一表面上。所述封装体囊封重布结构的第一表面、半导体装置及电连接件。所述电连接件的一部分通过所述封装体暴露。
在一些实施例中，电子装置包括电路板及半导体装置封装。所述电路板具有第一表面。半导体装置封装安装在电路板的第一表面上。所述半导体装置封装包括重布结构、半导体装置、电连接件及封装体。所述重布结构具有第一表面及与所述第一表面相对的第二表面。所述半导体装置在所述重布结构的第一表面上。所述电连接件在所述重布结构的第一表面上。所述封装体囊封重布结构的第一表面、半导体装置及电连接件。
附图说明
图1A说明根据本发明的一些实施例的表面安装结构的横截面图；
图1B说明根据本发明的一些实施例的表面安装结构的横截面图；
图2A说明根据本发明的一些实施例的表面安装结构的横截面图；
图2B说明根据本发明的一些实施例的表面安装结构的横截面图；
图3说明根据本发明的一些实施例的表面安装结构的电连接件的横截面图；
图4说明根据本发明的一些实施例的表面安装结构的横截面图；
图5说明根据本发明的一些实施例的表面安装结构的电连接件的横截面图；
图6A说明根据本发明的一些实施例的表面安装结构的横截面图；
图6B说明根据本发明的一些实施例的图6A的表面安装结构的仰视图；
图7A说明根据本发明的一些实施例的表面安装结构的横截面图；
图7B说明根据本发明的一些实施例的图7A的表面安装结构的仰视图；
图8A说明根据本发明的一些实施例的表面安装结构的横截面图；
图8B说明根据本发明的一些实施例的图8A的表面安装结构的仰视图；
图9A说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图9B说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图9C说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图10A说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图10B说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图10C说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图11A说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图11B说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图11C说明根据本发明的一些实施例的制造表面安装结构的方法的一或多个阶段；
图12说明根据本发明的一些实施例的电子装置的横截面图；
图13说明根据本发明的一些实施例的电子装置的横截面图；
图14说明根据本发明的一些实施例的电子装置的横截面图；
图15说明根据本发明的一些实施例的表面安装结构的横截面图；及
图16说明根据本发明的一些实施例的电子装置的横截面图。
贯穿图式及实施方式使用共同参考编号以指示相同或类似组件。本发明将从以下结合随附图式所作的详细描述更显而易见。
具体实施方式
在诸如BGA封装技术的封装技术中，可在封装的裸片周围形成模制化合物以提供用于支撑扇出互连结构的额外表面区域。互连结构的重布层(RDL)将裸片上的输入/输出(I/O)垫电连接到扇出互连结构上的外部I/O垫。确切地说，BGA封装结构可包含半导体装置(例如，倒装裸片或线焊裸片)，其通常附接至载体(例如，衬底、导线框架等)且由囊封层模制以形成半导体装置封装。
然而，一些提供某些特定功能的半导体装置(例如，指纹传感器裸片)可安装到顶部载体(例如，具有感测区域的载体)，且所述顶部载体组装至底部载体(例如，用于电路扇出的载体)，以便安装到系统板(例如，PCB)。此类多载体结构可具有在大小(X-Y平面及Z高度)及制造成本方面的缺陷。
图1A说明根据本发明的一些实施例的表面安装结构10的横截面图。表面安装结构10包括重布结构11、电连接件12、封装体13、半导体装置14、凸块15、电子组件16及底填充层17。重布结构11具有表面111及与表面111相对的表面112。电连接件12中的至少一个在重布结构11的表面111上。封装体13囊封重布结构11的表面111及电连接件12。每一电连接件12的一部分通过封装体13暴露。
半导体装置14安装在重布结构11的表面111上。半导体装置14及重布结构11通过凸块15电连接。在一些实施例中，凸块之间的空间以底填充层17填充。电连接件12围绕半导体装置14的周边且用于扇出半导体装置14的输入及输出。电子组件16(例如，电阻器或电容器)也安装在重布结构11的表面111上。半导体装置14及电子组件16两者通过封装体13囊封。在一些实施例中，表面安装结构10进一步包括邻近于重布结构11的第二表面112的感测区域18。感测区域18可用于(例如)指纹感测或任何其它光感测目的。
如图1A中所示，重布结构11不延伸到封装体13的侧壁。因此，表面安装结构10的宽度(由封装体13的两个侧壁之间的距离定义)可通过切割封装体13调整以满足表面安装结构10的所要宽度。
在一些实施例中，电连接件12包括芯，所述芯包括金属芯或球体121及围绕所述金属芯或球体121的阻障层122。电连接件12进一步包括围绕芯的金属球体121及阻障层122的焊料层123。
在一些实施例中，电连接件12可为(例如)焊球、金属柱(例如，铜柱)、包含由焊料壳(例如，Sn)围绕的铜芯的导电球、包含由低熔融温度的焊料壳(例如，高熔融温度Sn)围绕的高熔融温度焊料芯(例如，高熔融温度Sn)的导电球，或其两者或多于两者的组合。
在一些实施例中，底填充层17可为(例如)毛细管底胶。在一些实施例中，延伸到裸片下方的封装体13的一部分也可充当底胶。
图1B说明根据本发明的一些实施例的表面安装结构10的横截面图。图1B中所示的表面安装结构10在某些方面类似于图1A中所示的表面安装结构10，不同之处在于在图1B中，重布结构11延伸到封装体13的侧壁。因此，在至少一些实施例中，表面安装结构10的宽度(由封装体13的两个侧壁之间的距离定义)可能并未通过切割封装体13来调整。与图1B中所示的表面安装结构10相比，图1A中所示的表面安装结构10的封装大小可由单体化之后的封装体13的大小确定，而非由重布结构11的大小指定，由此提供较大的封装大小设计灵活性。
图2A说明根据本发明的一些实施例的表面安装结构10的横截面图。图2A中所示的表面安装结构10在某些方面类似于图1A中所示的表面安装结构10，不同之处在于在图2A中，半导体装置14经由焊接线25电连接到重布结构11。在一些实施例中，焊接线25可为(例如)金(Au)线、铜(Cu)线、金属合金线、银(Ag)线、铝(Al)线，或其两者或多于两者的组合。
图2B说明根据本发明的一些实施例的表面安装结构10的横截面图。图2B中所示的表面安装结构10在某些方面类似于图2A中所示的表面安装结构10，不同之处在于在图2B中，重布结构11延伸到封装体13的侧壁。因此，在至少一些实施例中，表面安装结构10的宽度(由封装体13的两个侧壁之间的距离定义)可能并未通过切割封装体13来调整。与图2B中所示的表面安装结构10相比，图2A中所示的表面安装结构10的封装大小可由单体化之后的封装体13的大小确定，而非由重布结构11的大小指定，由此提供较大的封装大小设计灵活性。
图3说明根据本发明的一些实施例的表面安装结构的电连接件的横截面图。电连接件12包括芯，所述芯包括金属球体121及围绕所述金属球体121的阻障层122。电连接件12进一步包括围绕芯的金属球体121及阻障层122的焊料层123。阻障层122在金属球体121与焊料层123之间的接口上。阻障层122的厚度相对薄(例如，约1微米(μm)、约2μm、约3μm、约5μm、约10μm或约1μm至约10μm)。
在一些实施例中，金属球体121可由(例如)铜(Cu)、金(Au)或其组合形成。阻障层122可由(例如)镍(Ni)形成。焊料层可由(例如)基于锡(Sn)的焊料(例如，锡-银-铜(SAC)焊料、锡-银(SnAg)焊料等)形成。在一些实施例中，包含金属球体121及阻障层122的芯在模制过程期间经压制成类椭圆或类卵形形状(例如，具有大于1的高宽比)，其中薄膜层用以抑制封装体13并使其成形。然而，至少在一些实施例中，即使在移除薄膜层之后，包含金属球体121及阻障层122的芯可能不会从类椭圆或类卵形形状恢复成类球体形状，是因为包含金属球体121及阻障层122的芯的弹性模量(例如，弹性模量、拉伸模量或杨氏模量)可能相对高。
图4说明根据本发明的一些实施例的表面安装结构10的横截面图。图4中所示的表面安装结构10在某些方面类似于图1A中所示的表面安装结构10，不同之处在于在图4中，电连接件42包括芯，所述芯包括弹性球体或芯420、围绕所述弹性球体或芯420的金属层421，及围绕所述金属层421的阻障层422。电连接件42包括围绕所述芯的焊料层423。在一些实施例中，弹性球体420包括(例如)聚合物。在一些实施例中，弹性球体420具有范围从大致1吉帕斯卡(GPa)到大致50GPa、从大致0.5GPa到大致100GPa或从大致0.1GPa到大致500GPa的弹性模量(例如，弹性模量、拉伸模量或杨氏模量)。在一些实施例中，弹性球体420具有范围从大致3GPa到大致6GPa、从大致1GPa到大致10GPa、从大致0.5GPa到大致50GPa的弹性模量(例如，弹性模量、拉伸模量或杨氏模量)。铜的弹性模量(例如，弹性模量、拉伸模量或杨氏模量)为约117GPa。
图5说明根据本发明的一些实施例的表面安装结构的电连接件的横截面图。电连接件42包括芯，所述芯包括弹性球体420、金属层421及阻障层422。金属层421围绕弹性球体420。阻障层422围绕金属层421。电连接件42进一步包括围绕所述芯的焊料层423。阻障层422在金属层421与焊料层423之间的接口上。阻障层422的厚度相对薄。
在一些实施例中，弹性球体420可由聚合物形成。金属层421可由(例如)铜(Cu)、金(Au)或其组合形成。阻障层422可由(例如)镍(Ni)形成。焊料层423可由(例如)基于锡(Sn)的焊料(例如，锡-银-铜(SAC)焊料、锡-银(SnAg)焊料等)形成。在一些实施例中，包含420、421及422的芯在模制过程期间经压制成类椭圆或类卵形形状，其中薄膜层用以抑制封装体13并使其成形。
在至少一些实施例中，由于弹性球体420的弹性模量(例如，弹性模量、拉伸模量或杨氏模量)的范围可为从大致1GPa到大致50GPa、从大致0.5GPa到大致100GPa或从大致0.1GPa到大致500GPa，弹性球体420可在移除薄膜层之后从类椭圆或类卵形形状恢复成类球体形状(例如，具有约为1的高宽比)。然而，金属层421及阻障层422可能不会从类椭圆或类卵形形状恢复成类球体形状，因为相较于弹性球体420的弹性模量，金属层421及阻障层422的弹性模量(例如，弹性模量、拉伸模量或杨氏模量)相对较高。因此，弹性球体420可通过空间50与金属层421分离。金属层421接着定义类椭圆或类卵形球面空间50。空间50中可能没有物质且其可为真空。空间50中可能不存在可氧化金属层421的空气或其它气体。
另外，归因于弹性球体420的相对较低的弹性模量，与图3中通过封装体13暴露的电连接件12的部分的高度相比，图5中通过封装体13暴露的电连接件42的部分的高度可更容易控制。如图5的实施例中所示，通过封装体13暴露的电连接件42的部分的高度可至少为或大于(例如)约100μm、约200μm或约400μm。为了进行比较，如图3的实施例中所示，通过封装体13暴露的电连接件12的部分的高度相对较小。为了表面安装至印刷电路板上，通过封装体13暴露的电连接件12的部分的高度可经指定为至少为或大于约50μm。
图6A说明根据本发明的一些实施例的表面安装结构10的横截面图。图6A中所示的表面安装结构10在某些方面类似于图1A中所示的表面安装结构10，不同之处在于在图6A中，电连接件62接地以在图6A的表面安装结构10的底部形成基本上平面表面624。封装体13具有表面131，且电连接件62具有基本上平面表面624。电连接件62的基本上平面表面624相对于封装体13的表面131突出。
图6B说明图6A的表面安装结构10的仰视图。在一些实施例中，电连接件62包括金属类球面芯621及围绕所述金属类球面芯621的阻障层622。金属类球面芯621具有基本上平面表面，且阻障层622具有基本上平面表面。金属类球面芯621的基本上平面表面及阻障层622的基本上平面表面通过封装体13暴露。电连接件62进一步包括围绕阻障层622的焊料层623。焊料层623具有基本上平面表面。焊料层623的基本上平面表面也通过封装体13暴露。
图7A说明根据本发明的一些实施例的表面安装结构10的横截面图。图7A中所示的表面安装结构10在某些方面类似于图1A中所示的表面安装结构10，不同之处在于在图7A中，电连接件72接地以在图7A的表面安装结构10的底部形成基本上平面表面724。封装体13具有第一表面131，且电连接件72具有基本上平面表面724。电连接件72的基本上平面表面724与封装体131的表面131基本上共面。
图7B说明图7A的表面安装结构10的仰视图。在一些实施例中，电连接件72包括金属类球面芯721及围绕所述金属类球面芯721的阻障层722。金属类球面芯721具有基本上平面表面，且阻障层722具有基本上平面表面。金属类球面芯721的基本上平面表面及阻障层722的基本上平面表面通过封装体13暴露。电连接件72进一步包括围绕阻障层722的焊料层723。焊料层723具有基本上平面表面。焊料层723的基本上平面表面也通过封装体13暴露。
图8A说明根据本发明的一些实施例的表面安装结构10的横截面图。图8A中所示的表面安装结构10在某些方面类似于图4中所示的表面安装结构10，不同之处在于在图8A中，电连接件82接地以在底部形成基本上平面表面824。封装体13具有第一表面131，且电连接件82具有基本上平面表面824。电连接件82的基本上平面表面824与封装体131的表面131基本上共面。
图8B说明图8A的表面安装结构10的仰视图。在一些实施例中，电连接件82包括弹性类球面芯820、金属层821及阻障层822。金属层821围绕弹性类球面芯820。阻障层822围绕金属层821。弹性类球面芯820具有基本上平面表面，金属层821具有基本上平面表面，且阻障层822具有基本上平面表面。弹性类球面芯820的基本上平面表面、金属层821的基本上平面表面及阻障层822的基本上平面表面通过封装体13暴露。电连接件82进一步包括围绕阻障层822的焊料层823。焊料层823具有基本上平面表面。焊料层823的基本上平面表面也通过封装体13暴露。
图9A、9B及9C说明根据本发明的一些实施例的制造表面安装结构的方法的各种阶段。图9A说明已经经由以下阶段处理的衬底(例如，重布结构)11：烘烤衬底条带；通过表面安装技术(SMT)将电子组件16安装于衬底条带上；将电连接件12安装于衬底条带上；将衬底条带锯割成个别衬底11；及将衬底11安置于载体19上。
如图9B中所示，接着对衬底11执行以下阶段：通过倒装(FC)焊接将裸片14安装至衬底11上；回焊焊料；焊剂清洗；分散底胶(UF)17；及固化UF 17。
如图9C中所示，薄膜型模制化合物(例如，封装体)13应用于衬底11、电连接件12及裸片14上。最终，执行以下阶段以形成一或多个表面安装结构(例如，如图1A中所示的表面安装结构)：解包带及通过锯割成个别封装结构而单体化。
图10A、10B及10C说明根据本发明的一些实施例的制造表面安装结构的方法的各种阶段。图10A、10B及10C中所示的方法在某些方面类似于图9A、9B及9C中所示的方法，不同之处在于在图10A、10B及10C中，衬底条带20不会在模制之前锯割成个别衬底。因此，在图10A、10B及10C中所示的方法中不使用载体。图10C中所示的衬底条带20通过锯割成个别封装结构而单体化以形成一或多个表面安装结构(例如，如图1B中所示的表面安装结构10)。
图11A、11B及11C说明根据本发明的一些实施例的制造表面安装结构的方法的各种阶段。图11A、11B及11C中所示的方法在某些方面类似于图9A、9B及9C中所示的方法，不同之处在于裸片14通过线焊安装到衬底11上。因此，在一些实施例中，可省略以下阶段：焊料回焊；焊剂清洗；底胶(UF)17分散；及UF 17固化。在一些实施例中，执行以下阶段以形成一或多个表面安装结构(例如，如图2A中所示的表面安装结构10)：解包带及通过锯割成个别封装结构而单体化。在一些实施例中，图2B中的表面安装结构10也可使用在某些方面与图11A、11B及11C中所示的方法类似的方法来制造，不同之处在于衬底条带在模制之前不会经锯割成个别衬底。
图12说明根据本发明的一些实施例的电子装置90的横截面图。类似与图1A中所示的表面安装结构10的半导体装置封装10将通过表面安装技术安装于外部电路板80上。半导体装置封装10包括重布结构11、半导体装置14、电连接件12及封装体13。重布结构11具有第一表面111及与所述第一表面111相对的第二表面112。所述半导体装置14在所述重布结构11的第一表面111上。电连接件12在重布结构11的第一表面111上。封装体13囊封重布结构11的第一表面111、半导体装置14及电连接件12。电连接件12中的每一个的一部分通过封装体13暴露。
在一些实施例中，如图12中所示的电子装置90包括电路板80及半导体装置封装10。电路板80具有第一表面801。类似于图1A中所示的表面安装结构10的半导体装置封装10安装于电路板80的第一表面801上。电连接件12中的每一个的经暴露部分直接安装到且电连接到电路板80。在一些实施例中，图1B、2A及2B中所示的表面安装结构也可以与图12中所示相同的方式安装在电路板80的第一表面801上。
图13说明根据本发明的一些实施例的电子装置90的横截面图。图13中所示的电子装置90在某些方面类似于图12中所示的电子装置90，不同之处在于在图13中，各电连接件62接地以在电连接件62的底部形成基本上平面表面624。半导体装置封装10与图6A中所示的表面安装结构10类似或相同。电连接件62的基本上平面表面624相对于封装体13的表面131突出。
图14说明根据本发明的一些实施例的电子装置90的横截面图。图14中所示的电子装置90在某些方面类似于图12中所示的电子装置90，不同之处在于在图14中，各电连接件72接地以在电连接件72的底部形成基本上平面表面724。半导体装置封装10与图7A中所示的表面安装结构10类似或相同。电连接件72的基本上平面表面724与封装体131的表面131基本上共面。
图15说明根据本发明的一些实施例的表面安装结构10的横截面图。表面安装结构10包括重布结构11、电连接件12、封装体13、半导体装置14、凸块15、电子组件16、底填充层17及封装结构91。重布结构11具有表面111及与表面111相对的表面112。电连接件12中的至少一者在重布结构11的表面111上。在一些实施例中，表面安装结构10进一步包括邻近于重布结构11的表面112的感测区域18。感测区域18可用于(例如)指纹感测或任何其它光感测目的。
半导体装置14安装于重布结构11的表面111上。半导体装置14及重布结构11通过凸块15电连接。在一些实施例中，凸块之间的空间以底填充层17填充。封装结构91具有表面911及与表面911相对的表面912。重布结构11安装于封装结构91的表面911上。电连接件12用于将重布结构11与封装结构91电连接。
电子组件16(例如，电阻器或电容器)也安装在封装结构91的表面911上。封装体13囊封重布结构11的表面111、电连接件12及封装结构91的表面911。封装结构91进一步包括在封装结构91的表面912上的垫913。垫913用于扇出半导体装置14的输入及输出。
与图1A、1B、2A、2B、4、6A、7A及8A中所示的表面安装结构10相比较，图15中所示的表面安装结构10的厚度可较大，因为在图15中所示的表面安装结构10中存在两个衬底(例如，衬底11及衬底91)。在图15中所示的表面安装结构10的制造期间，可执行关于将重布结构11安装至封装结构91的阶段，由此增加制造成本。
图16说明根据本发明的一些实施例的电子装置90的横截面图。电子装置90包括电路板80及半导体装置封装10。电路板80具有第一表面801。类似于图15中所示的表面安装结构10的半导体装置封装10安装于电路板80的第一表面801上。与图12、13及14中所示的电子装置90相比较，图16中所示的电子装置90的厚度可较大，因为在图16中所示的电子装置90中存在两个衬底(例如，衬底11及衬底91)。
如本文中所使用，相对术语，诸如“内”、“内部”、“外”、“外部”、“顶部”、“底部”、“前”、“后”、“上”、“向上”、“下”、“向下”、“竖直”、“竖直地”、“侧向”、“侧向地”、“在…上方”及“在…下方”是指一组组件关于彼此的定向；此定向是根据图式，而非是制造或使用期间所需要的。
除非本文另外明确规定，否则如本文所用，单数形式“一(a/an)”及“所述”可包含多个指示物。
如本文中所使用，术语“连接(connect/connected/connection)”是指可操作性耦合或链接。经连接组件可(例如)经由另一组组件直接或间接地耦合至彼此。
如本文所使用，术语“导电(conductive/electrically conductive)”、及“导电率”是指输送电流的能力。导电材料通常指示展现对于电流流动的极小或无反作用的那些材料。导电率的一个量度为西门子/米(S/m)。通常，导电材料为具有大于约104S/m(诸如至少105S/m或至少106S/m)的导电率的一种材料。材料的导电率有时可随温度变化。除非另外规定，否则材料的导电率是在室温下量测。
如本文中所使用，术语“大致”、“基本上”、“基本”及“约”是指相当大的程度或范围。当与事件或情况结合使用时，术语可指事件或情况精确发生的例项以及事件或情况近似地发生的例项，诸如解释本文中所描述的制造方法的典型容限水平。举例来说，当结合数值使用时，所述术语可指小于或等于所述数值的±10％的变化范围，诸如，小于或等于±5％、小于或等于±4％、小于或等于±3％、小于或等于±2％、小于或等于±1％、小于或等于±0.5％、小于或等于±0.1％或者小于或等于±0.05％。举例来说，若两个数值之间的差小于或等于所述值的平均值的±10％(诸如，小于或等于±5％、小于或等于±4％、小于或等于±3％、小于或等于±2％、小于或等于±1％、小于或等于±0.5％、小于或等于±0.1％、或小于或等于±0.05％)，则可认为所述值“基本上”相同。
若两个表面之间的移位不大于5μm、不大于2μm、不大于1μm或不大于0.5μm，则可认为所述两个表面共面或基本上共面。
若表面上的最高点与最低点之间的差不大于5μm、不大于2μm、不大于1μm或不大于0.5μm，则可认为所述表面是平面或基本上平面的。
另外，有时在本文中按范围格式呈现量、比率及其它数值。应理解，此类范围格式为了便利及简洁起见而使用，且应灵活地解释为包含明确地指定为范围限值的数值，以及包含涵盖于所述范围内的所有个别数值或子范围，如同明确地指定每一数值及子范围一般。
在对一些实施例的描述中，提供“在”另一组件“上”的一组件可涵盖前一组件直接在后一组件上(例如，与后一组件物理接触)的状况以及一或多个介入组件位于前一组件与后一组件之间的状况。
尽管已参考本发明的特定实施例描述并说明本发明，但这些描述及说明并不限制本发明。所属领域的技术人员应理解，在不脱离如由所附申请专利范围定义的本发明的真实精神及范围的情况下，可作出各种改变且可取代等效物。
如各种实例实施例中所展示的结构及方法的构造及布置仅为说明性的。因此，所有这些修改希望包含在本发明的范围内。任何过程或方法步骤的次序或顺序可根据替代实施例变化或重新排序。可在不脱离本发明的范围的情况下在实例实施例的设计、操作条件及布置上进行其它替代、修改、改变及省略。

Claims (21)

1.一种表面安装结构，其包括：
重布结构，其具有第一表面及与所述第一表面相对的第二表面；
在所述重布结构的所述第一表面上的电连接件；及
封装体，其囊封所述重布结构的所述第一表面及所述电连接件；
其中所述电连接件的一部分通过所述封装体暴露，
所述电连接件包括芯，及
所述芯包括弹性芯及围绕所述弹性芯的金属层。
2.一种表面安装结构，其包括：
重布结构，其具有第一表面及与所述第一表面相对的第二表面；
在所述重布结构的所述第一表面上的电连接件；
封装体，其囊封所述重布结构的所述第一表面及所述电连接件；及
邻近于所述重布结构的所述第二表面的感测区域，
其中所述电连接件的一部分通过所述封装体暴露，
所述电连接件包括芯，及
所述芯包括弹性芯及围绕所述弹性芯的金属层。
3.一种半导体装置封装，其包括：
重布结构，其具有第一表面及与所述第一表面相对的第二表面；
在所述重布结构的所述第一表面上的半导体装置；
在所述重布结构的所述第一表面上的电连接件；
封装体，其囊封所述重布结构的所述第一表面、所述半导体装置及所述电连接件；及
邻近于所述重布结构的所述第二表面的感测区域，
其中所述电连接件的一部分通过所述封装体暴露，
所述电连接件包括芯，及
所述芯包括弹性芯及围绕所述弹性芯的金属层。
4.一种电子装置，其包括：
电路板，其具有第一表面；及
半导体装置封装，其安装在所述电路板的所述第一表面上，所述半导体装置封装包括：
重布结构，其具有第一表面及与所述第一表面相对的第二表面；
在所述重布结构的所述第一表面上的半导体装置；
在所述重布结构的所述第一表面上的电连接件；及
封装体，其囊封所述重布结构的所述第一表面、所述半导体装置及所述电连接件；
其中所述电连接件的一部分通过所述封装体暴露，
所述电连接件包括芯，
所述芯包括弹性芯及围绕所述弹性芯的金属层，及
所述电连接件的所述暴露部分经安装至所述电路板的所述第一表面。
5.根据权利要求1所述的表面安装结构，其中所述芯进一步包括围绕所述金属层的阻障层。
6.根据权利要求5所述的表面安装结构，其中所述电连接件进一步包括围绕所述阻障层的焊料层。
7.根据权利要求1所述的表面安装结构，其中所述弹性芯具有范围从大致1吉帕斯卡GPa到大致50GPa的弹性模量。
8.根据权利要求1所述的表面安装结构，其中所述弹性芯具有范围从大致3GPa到大致6GPa的弹性模量。
9.根据权利要求1所述的表面安装结构，其中所述弹性芯包括聚合物。
10.根据权利要求1所述的表面安装结构，其中所述金属层定义一空间且所述弹性芯的至少一部分通过所述空间与所述金属层分离。
11.根据权利要求1所述的表面安装结构，其中所述金属层定义具有大于1的高宽比的空间。
12.根据权利要求2所述的表面安装结构，其中所述封装体具有第一表面且所述电连接件具有基本上平面表面，且其中所述电连接件的所述基本上平面表面相对于所述封装体的所述第一表面突出。
13.根据权利要求1所述的表面安装结构，其中所述封装体具有第一表面且所述电连接件具有基本上平面表面，且其中所述电连接件的所述基本上平面表面与所述封装体的所述第一表面基本上共面。
14.根据权利要求2所述的表面安装结构，其中所述电连接件包括金属芯及围绕所述金属芯的阻障层，且其中所述金属芯具有第一基本上平面表面且所述阻障层具有第一基本上平面表面，且其中所述金属芯的所述第一基本上平面表面及所述阻障层的所述第一基本上平面表面通过所述封装体暴露。
15.根据权利要求14所述的表面安装结构，其中所述电连接件进一步包括围绕所述阻障层的焊料层，且其中所述焊料层具有第一基本上平面表面且其中所述焊料层的所述第一基本上平面表面通过所述封装体暴露。
16.根据权利要求3所述的半导体装置封装，其中所述封装体具有第一表面且所述电连接件具有基本上平面表面，且其中所述电连接件的所述基本上平面表面相对于所述封装体的所述第一表面突出。
17.根据权利要求3所述的半导体装置封装，其中所述封装体具有第一表面且所述电连接件具有基本上平面表面，且其中所述电连接件的所述基本上平面表面与所述封装体的所述第一表面基本上共面。
18.根据权利要求3所述的半导体装置封装，其中所述电连接件包括金属芯及围绕所述金属芯的阻障层，且其中所述金属芯具有第一基本上平面表面且所述阻障层具有第一基本上平面表面，且其中所述金属芯的所述第一基本上平面表面及所述阻障层的所述第一基本上平面表面通过所述封装体暴露。
19.根据权利要求18所述的半导体装置封装，其中所述电连接件进一步包括围绕所述阻障层的焊料层，且其中所述焊料层具有第一基本上平面表面且其中所述焊料层的所述第一基本上平面表面通过所述封装体暴露。
20.根据权利要求3所述的半导体装置封装，其中所述电连接件的所述暴露部分具有基本上平面表面。
21.根据权利要求4所述的电子装置，其中所述电连接件的所述暴露部分具有基本上平面表面。
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