CN107958837B - 半导体制造装置用部件及其制法 - Google Patents

半导体制造装置用部件及其制法 Download PDF

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CN107958837B
CN107958837B CN201710952345.0A CN201710952345A CN107958837B CN 107958837 B CN107958837 B CN 107958837B CN 201710952345 A CN201710952345 A CN 201710952345A CN 107958837 B CN107958837 B CN 107958837B
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electrostatic chuck
concave surface
support substrate
semiconductor manufacturing
manufacturing apparatus
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CN107958837A (zh
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竹林央史
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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Abstract

本发明提供一种半导体制造装置用部件及其制法。半导体制造装置用部件的制法包括如下工序：(a)准备平板状的静电卡盘、支撑基板以及平板状的金属接合材的工序，所述静电卡盘为陶瓷制且具有晶片载置面，所述支撑基板包含复合材料且具有凹面，所述复合材料与所述陶瓷之间的40～570℃的线热膨胀系数差的绝对值为0.2×10‑6/K以下；以及(b)在支撑基板的凹面和静电卡盘的与晶片载置面相反侧的面之间夹入金属接合材，通过在金属接合材的固相线温度以下的温度对支撑基板和静电卡盘进行热压接合，从而使静电卡盘变形为具有与凹面相同的弯曲度的工序。

Description

半导体制造装置用部件及其制法
技术领域
本发明涉及半导体制造装置用部件及其制法。
背景技术
作为半导体制造装置用部件，已知有如下部件，该部件具备：具有晶片载置面且埋设有静电电极的静电卡盘、以及接合于该静电卡盘的与晶片载置面相反侧的面的支撑基板。专利文献1中公开了，作为半导体制造装置用部件，支撑基板中的与静电卡盘接合的面是凹面，且以凹面的中央部的深度是凹面直径的6.66×10-5～8.33×10-5倍的方式形成。还进行了如下说明：根据这样的半导体制造装置用部件，通过将支撑基板中的与静电卡盘接合的面形成为凹面，能够稳定地保持晶片。专利文献1中，静电卡盘由陶瓷部件构成，支撑基板由铝部件、不锈钢部件等构成。这里，如果比较线热膨胀系数，则作为陶瓷的代表例的氧化铝为7～8×10-6/K，铝约为23×10-6/K，作为不锈钢的代表例的SUS304约为16×10-6/K。此外，在粘接静电卡盘与支撑基板的凹面时，在二者的间隙中浸润粘接剂来进行粘接。
现有技术文献
专利文献
专利文献1：日本专利第5628507号公报
发明内容
发明要解决的课题
但是，专利文献1中，由于静电卡盘与支撑基板之间的线热膨胀系数差较大，因而在将二者加热来进行粘接的工序中，会因该线热膨胀系数差而引起变形。因此，难以使静电卡盘精度良好地反映支撑基板的凹面形状。此外，由于在静电卡盘与支撑基板的凹面的间隙中浸润粘接剂(即，将粘接剂制成液态而使其渗入)，因而粘接后的粘接层的厚度易于产生不均，从这一点上也难以使静电卡盘精度良好地反映支撑基板的凹面形状。
本发明是为了解决这样的课题而提出，主要目的在于提供一种使静电卡盘精度良好地反映支撑基板的凹面形状的半导体制造装置用部件。
用于解决课题的方法
本发明的半导体制造装置用部件的制法包括如下工序：
(a)准备平板状的静电卡盘、支撑基板以及平板状的金属接合材的工序，上述静电卡盘为陶瓷制且具有晶片载置面，上述支撑基板包含复合材料且具有中央比周边凹陷的形状的凹面，所述复合材料与上述陶瓷之间的40～570℃的线热膨胀系数差的绝对值为0.2×10-6/K以下，
(b)在上述支撑基板的上述凹面和上述静电卡盘的与上述晶片载置面相反侧的面之间，夹入上述金属接合材，在上述金属接合材的固相线温度以下的温度对上述支撑基板和上述静电卡盘进行热压接合，从而使上述静电卡盘变形为具有与上述凹面相同的弯曲度的工序。
该制法中，由于构成静电卡盘的陶瓷与构成支撑基板的复合材料之间的40～570℃的线热膨胀系数差的绝对值为0.2×10-6/K以下，因此在将二者加热来进行接合时，不会或几乎不会因该线热膨胀系数差而发生变形。此外，由于在支撑基板的凹面和静电卡盘的与晶片载置面相反侧的面之间夹入金属接合材，并在该金属接合材的固相线温度以下的温度将二者热压接合，因此金属接合层的厚度难以产生不均。由此，能够使静电卡盘精度良好地反映支撑基板的凹面形状。
需说明的是，这样的热压接合有时也称为“TCB(Thermal Compression Bonding，热压结合)”。
本发明的半导体制造装置用部件的制法中，上述凹面优选为凹陷成球面状的面。这样的话，由于凹面的曲率在任何位置都相同，因而在接合时能够以等分布施加荷重，容易使金属接合材所带来的接合强度均匀。
本发明的半导体制造装置用部件的制法中，上述凹面的最凹陷部位的深度优选为1～100μm，更优选为40～60μm。这样，即使在最凹陷部位的深度较深的情况下，根据本发明的制法也能够以充分的接合强度来接合静电卡盘和支撑基板。
本发明的半导体制造装置用部件的制法中，优选上述陶瓷是氧化铝，上述复合材料是含有37～60质量％的碳化硅且以分别少于上述碳化硅的质量％的量含有硅化钛、钛碳化硅和碳化钛的材料，上述金属接合材由Al-Si-Mg系或Al-Mg系材料构成。这样的复合材料由于与氧化铝的线热膨胀系数差非常小，因而适合作为支撑基板的材料。此外，由Al-Si-Mg系或Al-Mg系材料构成的金属接合材适合于热压接合。Al-Si-Mg系或Al-Mg系材料是以Al为主成分的材料，作为Al-Si-Mg系材料的一例，可列举Si为9～12质量％、Mg为1～2质量％、余量为Al的材料。
本发明的半导体制造装置用部件的制法中，优选上述静电卡盘的厚度为2mm以上且5mm以下，上述支撑基板的厚度为7mm以上且15mm以下。在静电卡盘与支撑基板的凹面接合时，要恢复为平板状的力会作用于静电卡盘，但只要将静电卡盘和支撑基板的厚度设计为落入上述的数值范围，则即使这样的力起作用，也能够将静电卡盘在变形为具有与凹面相同的弯曲度的状态下容易地接合于支撑基板。
本发明的半导体制造装置用部件具有：
静电卡盘，其为陶瓷制且具有晶片载置面；
支撑基板，其包含复合材料且具有中央比周边凹陷的形状的凹面，所述复合材料与上述陶瓷之间的40～570℃的线热膨胀系数差的绝对值为0.2×10-6/K以下；以及
金属接合层，其在上述静电卡盘变形为具有与上述凹面相同的弯曲度的状态下，将上述静电卡盘的与上述晶片载置面相反侧的面和上述支撑基板的上述凹面进行接合。
该半导体制造装置用部件中，由于构成静电卡盘的陶瓷与构成支撑基板的复合材料之间的40～570℃的线热膨胀系数差的绝对值为0.2×10-6/K以下，并且支撑基板的凹面与静电卡盘由金属接合层接合，因此静电卡盘能够精度良好地反映支撑基板的凹面形状。此外，由于静电卡盘的晶片载置面成为凹面，因而与晶片载置面为凸面的情形相比，能够将晶片稳定地保持在晶片载置面上。
本发明的半导体制造装置用部件中，上述凹面优选为凹陷成球面状的面。此外，上述凹面的最凹陷部位的深度优选为40～60μm。进而，优选上述陶瓷为氧化铝，上述复合材料为含有37～60质量％的碳化硅且以分别少于上述碳化硅的质量％的量含有硅化钛、钛碳化硅和碳化钛的材料，上述金属接合层由Al-Si-Mg系或Al-Mg系材料构成。此外，优选上述静电卡盘的厚度为2mm以上且5mm以下，上述支撑基板的厚度为7mm以上且15mm以下。
附图说明
图1是半导体制造装置用部件10的截面图。
图2是晶片载置面22的平面图。
图3是静电卡盘20的制造工序图。
图4是支撑基板30的制造工序图。
图5是半导体制造装置用部件10的制造工序图。
具体实施方式
以下，对本实施方式的半导体制造装置用部件10进行说明。图1是半导体制造装置用部件10的截面图(在通过部件10的中心的垂直面切断时的截面图)，图2是晶片载置面22的平面图。
半导体制造装置用部件10具有静电卡盘20、支撑基板30和金属接合层40。
静电卡盘20为氧化铝制的、外径比实施等离子体处理的硅制晶片小的圆盘状的盘，内置有静电电极24和加热电极26。静电卡盘20的直径没有特别限定，例如可以为250～350mm。静电卡盘20的厚度没有特别限定，优选为2mm以上且5mm以下。静电卡盘20的上表面为晶片载置面22。如图2所示，在晶片载置面22上，沿着外侧边缘形成有密封带22a，在整个面上形成有多个凸纹(emboss)22b。密封带22a和凸纹22b的高度为数μm～数10μm。静电电极24是能够介由未图示的供电端子由外部电源施加直流电压的面电极。氧化铝制的盘中的晶片载置面22与静电电极24之间的部分作为电介质层28而发挥功能。如果对该静电电极24施加直流电压，则载置于晶片载置面22的晶片通过库伦力被吸附固定在晶片载置面22上，如果解除直流电压的施加，则晶片在晶片载置面22上的吸附固定被解除。加热电极26例如按照一笔画的要领以遍及静电卡盘20的整面进行配线的方式形成图案，如果施加电压则发热而加热晶片。静电电极24和加热电极26均设计为与晶片载置面22平行。需说明的是，“平行”除了完全平行的情形之外，即使不完全平行，只要是公差范围内则也认为是平行(以下相同)。
支撑基板30是复合材料制的、在外周具有台阶的圆盘状的盘。支撑基板30的上表面是外径与静电卡盘20同等或稍大的圆形，并成为中央比周边凹陷的形状的凹面32。复合材料含有Si、C和Ti，是与氧化铝之间的40～570℃的线热膨胀系数差的绝对值为0.2×10-6/K以下的材料。复合材料优选含有37～60质量％的碳化硅粒子，且以分别少于碳化硅粒子的质量％的量含有硅化钛、钛碳化硅和碳化钛。含量可以通过取得复合材料的X射线衍射图案并使用数据解析用软件进行简易定量来求出。作为硅化钛，可列举TiSi2、TiSi、Ti5Si4、Ti5Si3等，其中，优选TiSi2。作为钛碳化硅，优选Ti3SiC2(TSC)，作为碳化钛，优选TiC。碳化钛的质量％优选小于硅化钛的质量％以及钛碳化硅的质量％。硅化钛的质量％优选大于钛碳化硅的质量％。即，关于质量％，优选碳化硅为最大，以硅化钛、钛碳化硅、碳化钛的顺序依次减小。例如，可以使碳化硅为37～60质量％、硅化钛为31～41质量％、钛碳化硅为5～25质量％、碳化钛为1～4质量％。此外，复合材料的开口气孔率优选为1％以下。开口气孔率可以通过以纯水为介质的阿基米德法来测定。关于这样的复合材料的详情，记载于日本专利第5666748号公报。作为凹面32，可列举例如凹陷成研钵状的面、凹陷成球面状的面，优选为凹陷成球面状的面。此外，凹面32中最凹陷部位的深度优选为1～100μm，更优选为40～60μm。支撑基板30的厚度没有特别限定，例如优选为7mm以上且15mm以下。需说明的是，在支撑基板30中的与凹面32相反侧的面上还可以接合有未图示的冷却基材。冷却基材例如由铝、铝合金等构成，在内部可以具有制冷剂通路。
金属接合层40是将静电卡盘20的与晶片载置面22相反侧的面23和支撑基板30的凹面接合的层，由Al-Si-Mg系或Al-Mg系材料构成。静电卡盘20在变形为具有与凹面32相同的弯曲度即凹形状的状态下，通过金属接合层40而与凹面32接合。如后所述，该金属接合层40由TCB形成。TCB接合强度可以设为比变形为凹形状的静电卡盘20要恢复到原来的平板状的强度更高。因此，不会在金属接合层40产生剥离。静电卡盘20的晶片载置面22、静电电极24，伴随静电卡盘20的变形而变形为具有与凹面32相同的弯曲度。因此，电介质层28在面内成为相同的厚度。金属接合层40的厚度没有特别限定，优选为1～300μm，更优选为50～150μm。此外，金属接合层40的外周优选不从静电卡盘20的外径突出。
需说明的是，在半导体制造装置用部件10中，还可以以在上下方向贯通半导体制造装置用部件10的方式设置用于向晶片背面供给He气的气体供给孔、用于插通将晶片从晶片载置面22顶起的顶针的顶针插通孔。
接着，对半导体制造装置用部件10的使用例进行说明。首先，在未图示的真空腔内设置半导体制造装置用部件10，在该状态下将晶片载置于晶片载置面22。然后，通过真空泵对真空腔内进行减压，调整为预定的真空度，对静电电极24施加直流电压而产生库伦力，使晶片吸附固定于晶片载置面22。由于晶片载置面22为凹形状，因而与晶片载置面22为凸形状的情形相比，晶片能够稳定地保持于晶片载置面22上。接着，使真空腔内形成预定压力(例如数十～数百Pa)的反应气体气氛，在该状态下产生等离子体。然后，通过所产生的等离子体对晶片的表面进行蚀刻。未图示的控制器控制向加热电极26供给的电力，以使晶片的温度达到预先设定的目标温度。
接着，对半导体制造装置用部件10的制造例进行说明。图3是静电卡盘20的制造工序图，图4是支撑基板30的制造工序图，图5是半导体制造装置用部件10的制造工序图。
静电卡盘20可以以如下方式制造。首先，准备圆盘状的氧化铝制的第一和第二生片201、202，在第一生片201的一个表面上形成静电电极24，在第二生片202的一个表面上形成加热电极26(参照图3的(a))。作为电极的形成方法，例如可以采用丝网印刷、PVD、CVD、镀敷等。接着，在第一生片201的形成有静电电极24的面上，层叠另一个氧化铝制的生片(第三生片203)(参照图3的(b))，在其之上以加热电极26与第三生片203接触的方式层叠第二生片202，构成层叠体220(参照图3的(c))。或者，虽未图示，但还可以在金属模具中以静电电极24向上的方式配置第一生片201，在形成有该静电电极24的面上以成为预定厚度的方式铺满造粒后的氧化铝颗粒，在其之上以加热电极26与氧化铝颗粒的层接触的方式层叠第二生片202，一并压制来制成层叠体220。接着，将层叠体220通过热压法进行烧成，从而得到埋设有静电电极24和加热电极26的陶瓷烧结体204(参照图3的(d))。通过对所得的陶瓷烧结体204的两面实施磨削加工或喷砂加工等来调整形状、厚度，从而得到平板状的静电卡盘20(参照图3的(e))。该静电卡盘20中，晶片载置面22、其相反侧的面23和静电电极24是平行的。需说明的是，可以使用通过铸造法制作的氧化铝成形体来代替氧化铝制的生片。或者，可以使用氧化铝烧结体来代替第一和第二生片201、202，也可以使用氧化铝烧结体来代替第三生片203。对于静电卡盘20的具体制造条件，参考例如日本特开2006-196864号公报中记载的条件来设定即可。
支撑基板30可以以如下方式制造。首先，制作复合材料制的圆盘部件301(参照图4的(a))。这里，制作如下的粉体混合物，其含有平均粒径10μm以上且25μm以下的碳化硅原料粒子39～51质量％，且含有以包含Ti和Si的方式选择出的1种以上的原料，对于来自除碳化硅以外的原料的Si和Ti，Si/(Si+Ti)的质量比为0.26～0.54。作为原料，可以使用例如碳化硅、金属Si和金属Ti。这种情况下，优选以碳化硅为39～51质量％，金属Si为16～24质量％，金属Ti为26～43质量％的方式混合。接着，通过单轴加压成形将所得的粉体混合物制作成圆盘状的成形体，并在非活性气氛下通过热压使该成形体在1370～1460℃烧结，得到复合材料制的圆板部件。需说明的是，热压时的压制压力设定为例如50～300kgf/cm2。接着，通过磨削加工等将所得的圆盘部件301形成为上表面成为所希望的凹面32且侧面具有台阶，得到支撑基板30(参照图4的(b))。由于氧化铝的40～570℃的线热膨胀系数为7.7×10-6/K，因而作为支撑基板30，使用40～570℃的线热膨胀系数为7.5～7.9×10-6/K的材料。对于支撑基板30的具体制造条件，参考例如日本专利第5666748号公报中记载的条件来设定即可。
半导体制造装置用部件10可以以如下方式制造。在支撑基板30的凹面32上载置平板状的金属接合材401，在其之上以与晶片载置面22相反侧的面23和金属接合材401接触的方式载置平板状的静电卡盘20(参照图5的(a))。由此，成为在支撑基板30的凹面32与平板状的静电卡盘20的面23之间夹有金属接合材401的状态。接着，在金属接合材401的固相线温度以下(例如，比固相线温度低20℃的温度以上且固相线温度以下)的温度将支撑基板30和静电卡盘20热压接合(TCB)，从而使静电卡盘20变形为具有与凹面32相同的弯曲度(参照图5的(b))。由此，金属接合材401成为金属接合层40。作为金属接合材401，可以使用Al-Mg系接合材、Al-Si-Mg系接合材。例如，在使用Al-Si-Mg系接合材(含有88.5重量％的Al、10重量％的Si、1.5重量％的Mg，固相线温度为约560℃)并通过TCB进行接合时，在真空气氛下且加热到540～560℃(例如550℃)的状态下以0.5～2.0kg/mm2(例如1.5kg/mm2)的压力对静电卡盘20加压数小时。金属接合材401优选使用厚度为100μm左右的接合材。接着，在静电卡盘20的晶片载置面22上贴付凸纹图案掩模50，对晶片载置面22喷射未图示的喷砂介质，进行喷砂加工(参照图5的(c))。此时，用保护掩模52覆盖静电卡盘20、金属接合层40和支撑基板30的各侧面，以避免受到喷砂加工的影响。作为喷砂介质的材质，可以使用例如SiC、Al2O3。通过喷砂加工在晶片载置面22形成密封带22a、凸纹22b。然后，通过去除保护掩模52，得到半导体制造装置用部件10(参照图5的(d))。
以上说明的半导体制造装置用部件10的制法中，由于构成静电卡盘20的氧化铝和构成支撑基板30的复合材料之间的40～570℃的线热膨胀系数差的绝对值为0.2×10-6/K以下，因而在利用TCB将二者接合时，不会或者几乎不会因该线热膨胀系数差而发生变形。此外，由于在支撑基板30的凹面32和静电卡盘20的与晶片载置面22相反侧的面23之间，夹入Al-Si-Mg系或Al-Mg系材料制的金属接合材401，并在该金属接合材401的固相线温度以下的温度对二者进行TCB接合，因此金属接合层40的厚度难以产生不均。由此，能够使静电卡盘20精度良好地反映支撑基板30的凹面形状。
此外，支撑基板30的凹面32是凹陷成球面状的面，凹面32的曲率在任何位置都相同，因此在接合时能够以等分布施加荷重。因此，容易使金属接合材401所带来的接合强度均匀。
进而，即使支撑基板30的凹面32中的最凹陷部位的深度较深时，根据上述的制法，也能够以充分的接合强度来接合静电卡盘20和支撑基板30。
此外，支撑基板30中使用的复合材料含有37～60质量％的碳化硅，且分别以少于上述碳化硅的质量％的量含有硅化钛、钛碳化硅和碳化钛，由于该复合材料与氧化铝之间的线热膨胀系数差非常小，因此适合作为支撑基板30的材料。
此外，如果将静电卡盘20的厚度设为2mm以上且5mm以下、将支撑基板30的厚度设为7mm以上且15mm以下，则能够得到以下的效果。即，在静电卡盘20接合至支撑基板30的凹面32时，要恢复到平板状的力会作用于静电卡盘20，但只要将静电卡盘20的厚度设计为2mm以上且5mm以下，将支撑基板30的厚度设计为7mm以上且15mm以下，则即使这样的力起作用，也能够使静电卡盘20在变形为具有与凹面32相同的弯曲度的状态下容易地接合于支撑基板30。
需说明的是，本发明不受上述实施方式的任何限定，不言而喻，只要属于本发明的技术范围内，就可以以各种方式来实施。
例如，上述的实施方式中，在静电卡盘20中埋设了静电电极24和加热电极26，但也可以省略加热电极26。
上述的实施方式中，支撑基板30的凹面32是凹陷成球面状的面，但也可以是凹陷成研钵状的面。凹陷成研钵状的面中，凹陷部分的空间形状为圆锥状。这样操作也能够得到本发明的效果。但是，凹陷成研钵状的面的中心部分有与其他部位相比接合强度下降的危险。这是因为，凹陷成研钵状的面的中心部分在接合时需要施加很大的荷重，但TCB接合是施加等分布的荷重，因此对中心部分施加的荷重容易不足。
上述的实施方式中，静电卡盘20由氧化铝构成，支撑基板30由含有Si、C和Ti的复合材料构成，但只要是静电卡盘20的陶瓷与支撑基板30的复合材料之间的40～570℃的线热膨胀系数差为0.2×10-6/K以下这样的材料的组合即可，不特别限定于该组合。
本申请以2016年10月14日申请的日本专利申请第2016-202485号作为主张优先权的基础，通过引用将其全部内容包含于本说明书中。

Claims (8)

1.一种半导体制造装置用部件的制法，其包括如下工序：
(a)准备平板状的静电卡盘、支撑基板以及平板状的金属接合材的工序，所述静电卡盘为陶瓷制且具有晶片载置面，所述支撑基板包含复合材料且具有中央比周边凹陷的形状的凹面，所述复合材料与所述陶瓷之间的40～570℃的线热膨胀系数差的绝对值为0.2×10-6/K以下，
(b)在所述支撑基板的所述凹面和所述静电卡盘的与所述晶片载置面相反侧的面之间夹入所述金属接合材，在所述金属接合材的固相线温度以下的温度将所述支撑基板与所述静电卡盘进行热压接合，从而使所述静电卡盘变形为具有与所述凹面相同的弯曲度的工序，
所述凹面的最凹陷部位的深度为40～60μm。
2.如权利要求1所述的半导体制造装置用部件的制法，其中，所述凹面为凹陷成球面状的面。
3.如权利要求1或2所述的半导体制造装置用部件的制法，其中，所述陶瓷是氧化铝，
所述复合材料是含有37～60质量％的碳化硅，且分别以少于所述碳化硅的质量％的量含有硅化钛、钛碳化硅和碳化钛的材料，
所述金属接合材由Al-Si-Mg系或Al-Mg系材料构成。
4.如权利要求1或2所述的半导体制造装置用部件的制法，其中，所述静电卡盘的厚度为2mm以上且5mm以下，
所述支撑基板的厚度为7mm以上且15mm以下。
5.一种半导体制造装置用部件，其具备：
静电卡盘，其为陶瓷制且具有晶片载置面；
支撑基板，其包含复合材料且具有中央比周边凹陷的形状的凹面，所述复合材料与所述陶瓷之间的40～570℃的线热膨胀系数差的绝对值为0.2×10-6/K以下；以及
金属接合层，其在所述静电卡盘变形为具有与所述凹面相同的弯曲度的状态下，将所述静电卡盘的与所述晶片载置面相反侧的面和所述支撑基板的所述凹面进行接合，
所述凹面的最凹陷部位的深度为40～60μm。
6.如权利要求5所述的半导体制造装置用部件，其中，所述凹面为凹陷成球面状的面。
7.如权利要求5或6所述的半导体制造装置用部件，其中，所述陶瓷是氧化铝，
所述复合材料是含有37～60质量％的碳化硅，且分别以少于所述碳化硅的质量％的量含有硅化钛、钛碳化硅和碳化钛的材料，
所述金属接合层由Al-Si-Mg系或Al-Mg系材料构成。
8.如权利要求5或6所述的半导体制造装置用部件，其中，所述静电卡盘的厚度为2mm以上且5mm以下，
所述支撑基板的厚度为7mm以上且15mm以下。
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