CN107949920B - 发光器件和包含该发光器件的发光器件封装 - Google Patents

发光器件和包含该发光器件的发光器件封装 Download PDF

Info

Publication number
CN107949920B
CN107949920B CN201680049969.5A CN201680049969A CN107949920B CN 107949920 B CN107949920 B CN 107949920B CN 201680049969 A CN201680049969 A CN 201680049969A CN 107949920 B CN107949920 B CN 107949920B
Authority
CN
China
Prior art keywords
semiconductor layer
conductive semiconductor
light
light emitting
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680049969.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN107949920A (zh
Inventor
朴修益
金珉成
成演准
李容京
崔光龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN107949920A publication Critical patent/CN107949920A/zh
Application granted granted Critical
Publication of CN107949920B publication Critical patent/CN107949920B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201680049969.5A 2015-08-27 2016-08-25 发光器件和包含该发光器件的发光器件封装 Active CN107949920B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020150120843A KR102378952B1 (ko) 2015-08-27 2015-08-27 발광소자 및 이를 포함하는 발광소자 패키지
KR10-2015-0120843 2015-08-27
PCT/KR2016/009444 WO2017034346A1 (ko) 2015-08-27 2016-08-25 발광소자 및 이를 포함하는 발광소자 패키지

Publications (2)

Publication Number Publication Date
CN107949920A CN107949920A (zh) 2018-04-20
CN107949920B true CN107949920B (zh) 2020-11-10

Family

ID=58100651

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680049969.5A Active CN107949920B (zh) 2015-08-27 2016-08-25 发光器件和包含该发光器件的发光器件封装

Country Status (6)

Country Link
US (1) US10263154B2 (enExample)
EP (1) EP3343644B1 (enExample)
JP (1) JP6878406B2 (enExample)
KR (1) KR102378952B1 (enExample)
CN (1) CN107949920B (enExample)
WO (1) WO2017034346A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102486032B1 (ko) * 2015-11-04 2023-01-11 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 조명 장치
JP7096489B2 (ja) * 2018-09-20 2022-07-06 日亜化学工業株式会社 半導体素子の製造方法
CN113421953B (zh) * 2021-06-24 2022-12-13 马鞍山杰生半导体有限公司 深紫外发光二极管及其制作方法
JP7440782B2 (ja) * 2022-01-25 2024-02-29 日亜化学工業株式会社 発光素子の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102217105A (zh) * 2008-10-22 2011-10-12 三星Led株式会社 半导体发光器件
US20140034980A1 (en) * 2012-08-03 2014-02-06 Stanley Electric Co., Ltd. Semiconductor light emitting device
EP2725629A2 (en) * 2012-10-24 2014-04-30 Nichia Corporation Light emitting element

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060192225A1 (en) * 2005-02-28 2006-08-31 Chua Janet B Y Light emitting device having a layer of photonic crystals with embedded photoluminescent material and method for fabricating the device
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
JP2007019099A (ja) * 2005-07-05 2007-01-25 Sumitomo Electric Ind Ltd 発光装置およびその製造方法
JP4947954B2 (ja) * 2005-10-31 2012-06-06 スタンレー電気株式会社 発光素子
JP5082504B2 (ja) * 2006-03-31 2012-11-28 日亜化学工業株式会社 発光素子及び発光素子の製造方法
WO2009106063A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Monolithischer, optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
JP5056799B2 (ja) * 2009-06-24 2012-10-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
DE102009034359A1 (de) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich
JP5409210B2 (ja) * 2009-09-01 2014-02-05 学校法人金沢工業大学 半導体発光素子
DE102010024079B4 (de) 2010-06-17 2025-08-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR101761385B1 (ko) * 2010-07-12 2017-08-04 엘지이노텍 주식회사 발광 소자
TWI557934B (zh) 2010-09-06 2016-11-11 晶元光電股份有限公司 半導體光電元件
KR101663192B1 (ko) * 2010-10-20 2016-10-06 엘지이노텍 주식회사 발광 소자
KR101873585B1 (ko) * 2011-08-10 2018-07-02 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 조명 시스템
KR101957816B1 (ko) * 2012-08-24 2019-03-13 엘지이노텍 주식회사 발광 소자
DE102012108879B4 (de) * 2012-09-20 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit mehreren nebeneinander angeordneten aktiven Bereichen
JP6011244B2 (ja) * 2012-10-24 2016-10-19 日亜化学工業株式会社 半導体発光素子
JP5924231B2 (ja) * 2012-10-24 2016-05-25 日亜化学工業株式会社 半導体発光素子
JP6210415B2 (ja) * 2013-07-05 2017-10-11 パナソニックＩｐマネジメント株式会社 紫外線発光素子の製造方法
TWI616004B (zh) * 2013-11-27 2018-02-21 晶元光電股份有限公司 半導體發光元件
KR20150060405A (ko) 2013-11-26 2015-06-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드 및 그것을 제조하는 방법
KR102252477B1 (ko) 2014-08-05 2021-05-17 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지
KR102486032B1 (ko) * 2015-11-04 2023-01-11 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 조명 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102217105A (zh) * 2008-10-22 2011-10-12 三星Led株式会社 半导体发光器件
US20140034980A1 (en) * 2012-08-03 2014-02-06 Stanley Electric Co., Ltd. Semiconductor light emitting device
EP2725629A2 (en) * 2012-10-24 2014-04-30 Nichia Corporation Light emitting element

Also Published As

Publication number Publication date
US10263154B2 (en) 2019-04-16
WO2017034346A1 (ko) 2017-03-02
EP3343644B1 (en) 2021-05-05
CN107949920A (zh) 2018-04-20
KR20170025035A (ko) 2017-03-08
EP3343644A4 (en) 2019-04-10
EP3343644A1 (en) 2018-07-04
JP2018525821A (ja) 2018-09-06
US20180226542A1 (en) 2018-08-09
KR102378952B1 (ko) 2022-03-25
JP6878406B2 (ja) 2021-05-26

Similar Documents

Publication Publication Date Title
KR102175345B1 (ko) 발광소자 및 조명시스템
KR102407329B1 (ko) 광원 모듈 및 이를 구비한 조명 장치
KR20130007266A (ko) 발광소자 및 이를 포함하는 발광소자 패키지
CN102237453A (zh) 发光器件及其制造方法、发光器件封装以及照明系统
CN107949920B (zh) 发光器件和包含该发光器件的发光器件封装
KR102163956B1 (ko) 발광소자 및 조명시스템
KR20120048413A (ko) 발광 소자 및 발광 소자 패키지
KR20130138483A (ko) 발광소자 및 이를 포함하는 조명시스템
KR20120014972A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
KR102200000B1 (ko) 발광소자 및 조명시스템
KR102007401B1 (ko) 발광소자
KR20110118333A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
KR102445539B1 (ko) 발광소자 및 조명장치
KR102261954B1 (ko) 형광체 필름, 이를 포함하는 발광 소자 패키지 및 조명 장치
KR102181429B1 (ko) 발광소자 및 조명시스템
KR102181404B1 (ko) 발광소자 및 조명시스템
KR20120087036A (ko) 발광 소자 및 발광 소자 패키지
KR20120029232A (ko) 발광소자
KR102425318B1 (ko) 발광소자 및 이를 포함하는 발광소자 패키지
KR101991033B1 (ko) 발광소자 패키지
KR102320865B1 (ko) 발광 소자
KR102127440B1 (ko) 발광 소자 패키지
US10236427B2 (en) Light emitting device package
KR20170082872A (ko) 발광소자
KR102163967B1 (ko) 발광소자 및 조명시스템

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210809

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul City, Korea

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China