CN107871750A - 柔性显示器 - Google Patents

柔性显示器 Download PDF

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CN107871750A
CN107871750A CN201710853965.9A CN201710853965A CN107871750A CN 107871750 A CN107871750 A CN 107871750A CN 201710853965 A CN201710853965 A CN 201710853965A CN 107871750 A CN107871750 A CN 107871750A
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layer
lower floor
buffer layer
plastic base
sinx
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CN107871750B (zh
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尹相天
权世烈
权会容
金恩雅
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LG Display Co Ltd
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Abstract

公开了一种柔性显示器。该柔性显示器包括位于塑料基板上的氧化物半导体薄膜晶体管,所述柔性显示器包括:第一缓冲层,该第一缓冲层设置在所述塑料基板上;第二缓冲层,该第二缓冲层设置在所述第一缓冲层上并且由硅氧化物(SiOx)形成;以及有源层,该有源层设置在所述第二缓冲层上并且由氧化物半导体形成,其中,所述第一缓冲层包括:下层,该下层与所述塑料基板直接接触并且由硅氮化物(SiNx)形成;以及上层,该上层设置在所述下层上并且由SiOx形成。

Description

柔性显示器
技术领域
本公开涉及柔性显示器。
背景技术
随着信息社会的发展,对于显示图像的显示装置的需求以各种方式增加。在显示装置的领域中,大尺寸阴极射线管(CRT)已经被具有外形薄、重量轻和屏幕尺寸大的优点的平板显示器(FPD)迅速地替代。平板显示器的示例包括液晶显示器(LCD)、等离子体显示面板(PDP)、有机发光二极管(OLED)显示器和电泳显示器(EPD)。
OLED显示器包括能够自己发光的自发光元件,并且具有响应时间快、发光效率高、亮度高和视角宽的优点。特别地,OLED显示器可以使用柔性塑料基板。此外,与等离子体显示面板或无机电致发光显示器相比,OLED显示器具有更低的驱动电压、更低的功耗和更好的色调的优点。
OLED显示器可以在柔性塑料基板上包括多个缓冲层。在OLED显示器的制造过程中,多个缓冲层阻挡从缓冲层下方的塑料基板扩散的离子或杂质。此外,在完成OLED显示器之后,多个缓冲层阻止外部湿气经由塑料基板渗透,从而防止薄膜晶体管和有机发光二极管劣化。
然而,由于构成缓冲层的材料的特性,缓冲层影响与缓冲层相邻的组件,从而降低了组件的特性。例如,缓冲层可以包括硅氮化物(SiNx)。当薄膜晶体管包括氧化物半导体时,存在于缓冲层的硅氮化物中的氢气扩散并降低了氧化物半导体的电特性。
发明内容
本公开在于提供能够防止湿气经由塑料基板渗透的显示装置。
本公开还提供了能够防止氧化物半导体的电特性由于构成缓冲层的硅氮化物层而降低的柔性显示器。
在一个方面,提供了一种柔性显示器,该柔性显示器包括位于塑料基板上的氧化物半导体薄膜晶体管,所述柔性显示器包括:第一缓冲层,该第一缓冲层设置在所述塑料基板上;第二缓冲层,该第二缓冲层设置在所述第一缓冲层上并且由硅氧化物(SiOx)形成;以及有源层,该有源层设置在所述第二缓冲层上并且由氧化物半导体形成,其中,所述第一缓冲层包括:下层,该下层与所述塑料基板直接接触并且由硅氮化物(SiNx)形成;以及上层,该上层设置在所述下层上并且由SiOx形成。
所述下层的厚度等于或大于所述上层的厚度。
所述下层包括彼此分离的第一下层和第二下层。
所述第一下层具有比所述第二下层的密度相对高的密度。
所述柔性显示器还包括遮光层,该遮光层设置在所述第一缓冲层和所述第二缓冲层之间并且与所述有源层交叠。
附图说明
附图被包括进来以提供本公开的进一步理解,并且被并入本说明书且构成本说明书的一部分,附图例示了本公开的实施方式,并且与本说明书一起用来解释本公开的原理。在附图中:
图1是根据本公开的实施方式的柔性显示器的示意性框图;
图2例示了子像素的电路构造的第一示例;
图3例示了子像素的电路构造的第二示例;
图4是根据本公开的实施方式的柔性显示器的横截面图;
图5示意性地例示了根据本公开的实施方式的第一缓冲层的构造;
图6示意性地例示了根据本公开的另一实施方式的第一缓冲层的构造;
图7示意性地例示了根据比较例和实验例的缓冲层的堆叠结构;以及
图8是例示根据比较例和实验例的氧化物半导体薄膜晶体管的电流-电压特性的曲线图。
具体实施方式
现在将详细地参考本公开的实施方式,在附图中例示了本公开的实施方式的示例。在任何可能的情况下,将在整个附图中使用相同的附图标记指代相同或相似的组件。将要注意的是,如果确定公知技术会误导本公开的实施方式,则将省略这些公知技术的详细描述。以下说明中所使用的相应元件的名称仅仅是为了便于书写说明书而选择的,并且可能因此与实际产品中所使用的名称不同。
根据本公开的实施方式的显示装置是柔性显示器,其中显示元件形成在柔性塑料基板上。根据本公开的实施方式的柔性显示器可以基于液晶显示器(LCD)、场发射显示器(FED)、等离子体显示面板(PDP)、有机发光二极管(OLED)显示器、电泳显示(EPD)、量子点显示器(QDD)等来实现。在以下描述中,为了便于说明,将以柔性显示器包括有机发光二极管的情况为例进行说明。
柔性显示器包括第一电极、与第一电极相对的第二电极以及在第一电极和第二电极之间的发射层。第一电极可以是阳极,第二电极可以是阴极。柔性显示器是自发光显示装置,该自发光显示装置被构造为通过在发射层内将从第一电极接收到的空穴与从第二电极接收到的电子组合来形成空穴-电子对(即,激子),并且通过当激子返回到基层(groundlevel)时产生的能量来发出光。
根据本公开的实施方式的柔性显示器可以被应用于向上发射光的顶部发射型显示器和向下发射光的底部发射型显示器二者。此外,根据本公开的实施方式的柔性显示器可以被应用于能够通过柔性显示器看到后侧的物体的透明显示器。
根据本公开的实施方式的柔性显示器使用塑料基板(例如,聚酰亚胺(PI)基板),以确保显示装置的柔性。由于塑料基板的阻挡特性非常低,所以必须向塑料基板添加执行阻挡功能的缓冲层。缓冲层位于塑料基板上,以阻挡从塑料基板扩散的离子或杂质并且防止湿气从外部渗透。
通常,缓冲层可以包括硅氧化物(SiOx)层和硅氮化物(SiNx)层。因为SiOx层和SiNx层各自具有预定阻挡特性,所以它们能够防止湿气通过塑料基板渗透。
满足预定阻挡特性所需的SiOx层和SiNx层的最小厚度彼此不同。作为实际测量能够满足10-2g/m2/天10-4g/m2/天的水蒸气透过率(WVTR)的SiOx层和SiNx层的最小厚度的结果,SiNx层的最小厚度为约8nm,SiOx层的最小厚度为约25nm。即,假设SiOx层和SiNx层具有相同的厚度,可以看出,SiNx层的阻挡特性比SiOx层的阻挡特性好得多。
考虑到i)SiOx层具有比SiNx层大的最小厚度以满足预定阻挡特性以及ii)显示装置的柔性随着缓冲层的厚度增加而减小,本公开的实施方式使用SiNx层作为构成缓冲层的组件。
然而,由于根据本公开的实施方式的显示装置包括使用氧化物半导体的薄膜晶体管(TFT),因此本公开的实施方式必须防止氢气进入氧化物半导体。也就是说,考虑到由于存在空位而导致器件特性降低,多晶硅半导体需要用氢气填充多晶硅半导体材料的空位的氢化处理。另一方面,由于未形成共价键的空位用作氧化物半导体材料中的载流子,所以氧化物半导体材料需要具有一定量的空位。因此,需要防止大量氢气进入氧化物半导体。
更具体地,当缓冲层包括SiNx层时,存在于SiNx层中的氢气可能扩散到氧化物半导体中,并且可能改变薄膜晶体管的沟道内的载流子的浓度。因此,氧化物半导体薄膜晶体管的阈值电压可能在负方向上改变,或者氧化物半导体薄膜晶体管的沟道可以变得导电,从而降低显示装置的图像质量。由于上述问题,当包括使用氧化物半导体的薄膜晶体管时,相关技术的显示装置不能使用SiNx层作为缓冲层。
本公开的实施方式描述了一种其中SiNx层能够在设置包括氧化物半导体薄膜晶体管的显示装置中被用作缓冲层的改进结构。
图1是根据本公开的实施方式的柔性显示器的示意性框图。图2例示了子像素的电路构造的第一示例。图3例示了子像素的电路构造的第二示例。
参照图1,根据本公开的实施方式的柔性显示器包括图像处理单元10、定时控制器20、数据驱动器30、选通驱动器40和显示面板50。
图像处理单元10输出从外部提供的数据信号DATA和数据使能信号DE。除了数据使能信号DE之外,图像处理单元10还可以输出垂直同步信号、水平同步信号和时钟信号中的一个或更多个。为了简洁和易读,未显示这些信号。图像处理单元10形成在作为集成电路(IC)的系统电路板上。
定时控制器20从图像处理单元10接收数据信号DATA以及包括数据使能信号DE或垂直同步信号、水平同步信号、时钟信号等的驱动信号。
定时控制器20基于驱动信号输出用于控制选通驱动器40的操作定时的选通定时控制信号GDC以及用于控制数据驱动器30的操作定时的数据定时控制信号DDC。定时控制器20可以形成在作为IC的控制电路板上。
数据驱动器30响应于从定时控制器20提供的数据定时控制信号DDC来对从定时控制器20接收到的数据信号DATA进行采样和锁存,并且使用伽马参考电压来将经采样和锁存的数据信号DATA进行转换。数据驱动器30将经转换的数据信号DATA输出到数据线DL1至DLn。数据驱动器30形成在作为IC的数据电路基板上。
选通驱动器40响应于从定时控制器20提供的选通定时控制信号GDC来在使选通电压的电平改变的同时输出选通信号。选通驱动器40将选通信号输出到选通线GL1至GLm。选通驱动器40形成在作为IC的选通电路板上,或者以面板内选通(GIP)方式形成在显示面板50上。
显示面板50响应于分别从数据驱动器30和选通驱动器40接收到的数据信号DATA和选通信号来显示图像。显示面板50包括用于显示图像的子像素SP。
如图2所示,每个子像素可以包括开关晶体管SW、驱动晶体管DR、补偿电路CC和有机发光二极管(OLED)。有机发光二极管基于由驱动晶体管DR产生的驱动电流来发光。
开关晶体管SW执行开关操作,使得响应于通过第一选通线GL1提供的选通信号,经由第一数据线DL1提供的数据信号被作为数据电压存储在电容器Cst中。驱动晶体管DR使得驱动电流能够基于存储在电容器Cst中的数据电压在高电位电力线VDD和低电位电力线GND之间流动。补偿电路CC是用于补偿驱动晶体管DR的阈值电压的电路。连接到开关晶体管SW或驱动晶体管DR的电容器可以安装在补偿电路CC内部。
补偿电路CC包括一个或更多个薄膜晶体管和电容器。补偿电路CC的构造可以根据补偿方法而不同地改变。将对补偿电路CC进行简要说明。
如图3所示,包括补偿电路CC的子像素还可以包括用于驱动补偿TFT并提供预定信号或电力的信号线和电力线。添加的信号线可以被定义为用于驱动子像素中包括的补偿TFT的1-2选通线GL1b。在图3中,“GL 1a”是用于驱动开关晶体管SW的1-1选通线。添加的电力线可以被定义为用于将子像素的预定节点初始化为预定电压的初始化电力线INIT。然而,这仅是示例,并且实施方式不限于此。
图2和图3通过示例的方式例示了一个子像素包括补偿电路CC。然而,当要被补偿的对象(例如,数据驱动器30)位于子像素外部时,可以省略补偿电路CC。子像素具有设置有开关晶体管SW、驱动晶体管DR、电容器和有机发光二极管的2T(晶体管)1C(电容器)的构造。然而,当将补偿电路CC添加到子像素时,子像素可以具有诸如3T1C、4T2C、5T2C、6T2C、7T1C、7T2C等这样的各种构造。
另外,图2和图3通过示例的方式例示了补偿电路CC位于开关晶体管SW和驱动晶体管DR之间。然而,补偿电路CC还可以位于驱动晶体管DR和有机发光二极管之间。补偿电路CC的位置和结构不限于图2和图3所示的位置和结构。
图4是根据本公开的实施方式的柔性显示器的横截面图。图5示意性地例示了根据本公开的实施方式的第一缓冲层的构造。图6示意性地例示了根据本公开的另一实施方式的第一缓冲层的构造。
参照图4和图5,根据本公开的实施方式的柔性显示器包括塑料基板SUB上的薄膜晶体管DT和有机发光二极管OLED。例如,塑料基板SUB可以是聚酰亚胺(PI)基板。因此,根据本公开的实施方式的柔性显示器可以具有柔性特性。
第一缓冲层BF1和第二缓冲层BF2位于塑料基板SUB和薄膜晶体管DT之间。第一缓冲层BF1可以具有的厚度,并且第二缓冲层BF2可以具有的厚度。遮光层LS位于第一缓冲层BF1和第二缓冲层BF2之间。遮光层LS可以被设置成与有源层ACT(具体地,薄膜晶体管DT的沟道)交叠,并且保护氧化物半导体元件免受外部光的影响。
第一缓冲层BF1阻挡从塑料基板SUB扩散的离子或杂质,并且防止湿气从外部渗透。第一缓冲层BF1包括由硅氮化物(SiNx)形成的下层BL和由硅氧化物(SiOx)形成的上层TL。下层BL和上层TL依次堆叠并且位于塑料基板SUB与薄膜晶体管DT的有源层ACT之间。
下层BL位于塑料基板SUB上。下层BL具有能够执行预定阻挡特性并且防止湿气经由塑料基板SUB渗透的厚度。由于下层BL由硅氮化物(SiNx)形成,因此下层BL能够在薄厚度的情况下满足预定阻挡特性。因此,下层BL能够防止柔性显示器的厚度增加并且确保柔性显示器的预定柔性。换句话说,下层BL可以具有能够满足预定阻挡特性的最小厚度。例如,下层BL可以具有的厚度。本公开的实施方式将在相同厚度的条件下具有比SiOx层好的阻挡特性的SiNx层(即,下层BL)作为与塑料基板SUB直接接触的层,从而同时确保预定阻挡特性和预定柔性。
因为本公开的实施方式在塑料基板SUB上直接形成下层BL,以便防止湿气经由塑料基板SUB渗透,所以需要考虑塑料基板SUB与下层BL之间的界面特性。
例如,当在塑料基板SUB上直接形成SiOx层时,由于塑料基板SUB和SiOx层的特性之间的差异而可能在塑料基板SUB和SiOx层之间的界面处发生剥离。本公开的实施方式将相比于SiOx层具有与塑料基板SUB更为相似的表面特性的SiNx层设置为与塑料基板SUB直接接触的层,从而防止或最小化可能在塑料基板SUB和下层BL之间的界面处发生的有缺陷的粘附。
因为本公开的实施方式不是使用现有的玻璃基板,而是使用具有相对低的热导率的塑料基板SUB,所以需要用于高效地消散在内部驱动元件(例如,薄膜晶体管)中产生的热的辅助装置。本公开的实施方式在塑料基板SUB上直接形成由具有高热导率的硅氮化物(SiNx)形成的下层BL,以便高效地散热。硅氮化物(SiNx)的热导率比硅氧化物(SiOx)的热导率大大约15倍。本公开的实施方式将具有高热导率的SiNx层设置为与塑料基板SUB直接接触的层,从而在无需单独的辅助装置的情况下高效地散热。
上层TL位于下层BL上。上层TL可以具有的厚度。本公开的实施方式能够通过在下层BL和有源层ACT之间设置上层TL来相对地增加存在于下层BL中的氢气朝向有源层ACT移动的路径的长度。此外,本公开的实施方式能够通过在下层BL上形成用作屏障的上层TL来诱导从下层BL扩散的氢气不是朝向有源层ACT而是朝向塑料基板SUB移动。因此,从下层BL扩散的氢气能够朝向下层BL下方的塑料基板SUB移动,并且能够容易地释放到外部。本公开的实施方式使下层BL与塑料基板SUB接触并且将上层TL堆叠在下层BL上,从而防止或减少来自下层BL的氢气进入有源层ACT。因此,能够使氧化物半导体的电特性的降低最小化。
下层BL的厚度可以等于或大于上层TL的厚度。下层BL可以具有足以阻挡来自外部的异物的厚度。此外,为了柔性显示器的柔性的目的,考虑到第一缓冲层BF1的总厚度,上层TL的厚度可以等于或小于下层BL的厚度。
由于从塑料基板SUB扩散的离子或杂质以及来自外部的湿气主要被由硅氮化物(SiNx)形成的下层BL阻挡,因此由硅氧化物(SiOx)形成的上层TL可以具有相对薄的厚度。也就是说,与下层BL仅由硅氧化物(SiOx)形成相比,本公开的实施方式能够确保在更薄的厚度的情况下水蒸气透过(或水蒸气渗透)的可靠性。也就是说,本公开的实施方式能够在确保阻挡特性并且确保柔性显示器的预定柔性的同时防止柔性显示器的总厚度增加。
如图6所示,构成第一缓冲层BF1的下层BL可以被划分为第一下层BL1和第二下层BL2,并且分开沉积。例如,第一下层BL1和第二下层BL2可以以预定时间间隔在同一室中依次沉积。第一下层BL1和第二下层BL2二者都可以由硅氮化物(SiNx)形成。第一下层BL1可以具有的厚度,并且第二下层BL2可以具有的厚度。
在化学气相沉积(CVD)处理中,下层BL不均匀地沉积在塑料基板SUB上,因此在下层BL中可能发生依据位置的厚度变化。在这种情况下,可以减小下层BL的表面特性,并且下层BL上的上层TL可以被剥离。
本公开的实施方式分开地沉积从下层BL划分的第一下层BL1和第二下层BL2,从而减小下层BL的厚度变化。也就是说,当通过单一处理来沉积下层BL时,在处理期间相应的材料可能集中地沉积在特定位置处,导致厚度变化过大。另一方面,当分开地沉积下层BL时,按照时间上和/或空间上分离的方式执行处理。因此,即使在第一处理期间相应的材料被集中地沉积在预定位置处,也可以在第二处理期间改变集中沉积材料的位置。因此,能够减小根据位置的厚度变化。
此外,本公开的实施方式可以通过分开沉积从下层BL划分的第一下层BL1和第二下层BL2来高效地阻挡在该处理期间可能在下层BL中形成的湿气渗透路径。也就是说,可以在通过CVD处理沉积的下层BL内部形成微小孔(或细小裂缝)。当通过单个处理沉积下层BL时,形成在下层BL内部的微小孔可以沿着厚度方向延伸以形成湿气渗透路径。另一方面,当分开沉积下层BL时,按照时间上和/或空间上分离的方式执行处理。因此,即使在第一处理期间在第一下层BL1中产生第一微小孔并且在第二处理期间在第二下层BL2中产生第二微小孔,第一微小孔和第二微小孔也可以彼此分离,而不是彼此连接。因此,能够使厚度方向上的湿气渗透路径的形成最小化。
第一下层BL1和第二下层BL2可以具有不同的密度。第一下层BL1可以由具有比第二下层BL2相对高的密度的硅氮化物(SiNx)形成,并且可以具有致密特性。第二下层BL2可以由具有比第一下层BL1相对低的密度的硅氮化物(SiNx)形成,并且可以具有多孔特性。本公开的实施方式能够通过使具有较高密度的第一下层BL1与塑料基板SUB接触来进一步改善水蒸气渗透的特性。
第二缓冲层BF2位于第一缓冲层BF1上。第二缓冲层BF2用于防止薄膜晶体管DT的有源层ACT被杂质污染并且使遮光层LS与有源层ACT绝缘。第二缓冲层BF2由硅氧化物(SiOx)形成。第二缓冲层BF2可以具有能够使遮光层LS和有源层ACT彼此绝缘的最小厚度。
本公开的实施方式还能够通过在下层BL和有源层ACT之间进一步包括第二缓冲层BF2来进一步增加存在于下层BL中的氢气朝向有源层ACT移动的路径的长度。因此,本公开的实施方式能够进一步减少下层BL的氢气进入有源层ACT并且使氧化物半导体的电特性的降低最小化。
薄膜晶体管DT包括有源层ACT、栅极GA、源极SE和漏极DE。更具体地,有源层ACT位于第二缓冲层BF2上。有源层ACT由氧化物半导体形成。氧化物半导体的示例包括诸如铟镓锌氧化物(IGZO)的锌氧化物半导体。氧化物半导体具有比非晶硅和多晶硅高的迁移率的优点,并且可以在低温处理中制造。由于氧化物半导体具有低的截止(OFF)电流,所以氧化物半导体可以适合于具有短导通(ON)时间和长关断时间的薄膜晶体管。此外,因为氧化物半导体由于低截止电流而增加了像素的电压保持时间,所以氧化物半导体可以适合于需要低速驱动和/或低功耗的显示装置
栅绝缘层GI位于有源层ACT上。栅绝缘层GI将栅极GA绝缘,并且可以由硅氧化物(SiOx)形成。栅绝缘层GI可以不包括硅氮化物(SiNx),以防止氢气进入有源层ACT。栅极GA位于栅绝缘层GI上。栅极GA可以形成为由铜(Cu)、钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)、钽(Ta)和钨(W)或其组合形成的单层或多层。栅极GA与有源层ACT的沟道对应地设置。层间介电层ILD位于栅极GA上。
层间介电层ILD将层间介电层ILD下方的栅极GA和有源层ACT绝缘。层间介电层ILD可以形成为硅氧化物(SiOx)层、硅氮化物(SiNx)层或其多层。然而,为了防止氢气进入有源层ACT,层间介电层ILD可以不包括SiNx层。
层间介质层ILD具有使有源层ACT的两侧(例如,源极区和漏极区)暴露的接触孔CH。源极SE和漏极DE位于层间介电层ILD上。源极SE和漏极DE中的每一个可以形成为单层或多层。当源极SE和漏极DE中的每一个形成为单层时,源极SE和漏极DE中的每一个可以由钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)中的一种或者其组合形成。当源极SE和漏极DE中的每一个形成为多层时,源极SE和漏极DE中的每一个可以形成为Mo/Al-Nd、Mo/Al或Ti/Al的双层或者形成为Mo/Al-Nd/Mo、Mo/Al/Mo或Ti/Al/Ti的三层。源极SE和漏极DE分别通过层间介电层ILD的接触孔CH连接到有源层ACT的两侧。
钝化层PAS位于薄膜晶体管DT上。钝化层PAS保护薄膜晶体管DT,并且可以形成为硅氧化物(SiOx)层、硅氮化物(SiNx)层或其多层。然而,为了防止氢气进入有源层ACT,钝化层PAS可以不包括SiNx层。
平整层OC位于钝化层PAS上,并且减小了底层结构的高度差异。平整层OC可以由诸如光学亚克力、聚酰亚胺、苯并环丁烯系树脂和丙烯酸酯系树脂这样的有机材料形成。如果必要或需要,可以省略钝化层PAS和平整层OC中的一个。
有机发光二极管OLED位于平整层OC上。有机发光二极管OLED包括第一电极ANO、有机发光层OL和第二电极CAT。更具体地,第一电极ANO位于平整层OC上。第一电极ANO通过贯穿钝化层PAS和平整层OC的接触孔连接到薄膜晶体管DT的漏极DE。第一电极ANO可以用作由诸如铟锡氧化物(ITO)、铟锌氧化物(IZO)和锌氧化物(ZnO)这样的透明导电材料形成的透射电极。此外,第一电极ANO还可以包括反射层并且用作反射电极。反射层可以由铝(Al)、铜(Cu)、银(Ag)、镍(Ni)、钯(Pd)或其组合形成。例如,反射层可以由Ag/Pd/Cu(APC)合金形成。
另外,限定像素的堤层BN位于包括第一电极ANO的塑料基板SUB上。堤层BN可以由诸如聚酰亚胺、苯并环丁烯系树脂和丙烯酸酯这样的有机材料形成。有机发光层OL位于由堤层BN暴露的第一电极ANO上。有机发光层OL是电子和空穴在其中复合并且发光的层。有机发光二极管OLED还可以包括位于有机发光层OL和第一电极ANO之间的空穴注入层和/或空穴传输层,并且还可以包括位于有机发光层OL上的电子注入层和/或电子传输层。
第二电极CAT位于有机发光层OL上。第二电极CAT可以由具有低功函数的镁(Mg)、钙(Ca)、铝(Al)、银(Ag)或其组合形成。第二电极CAT可以薄到足以透射光,并因此可以用作透射电极。此外,第二电极CAT可以厚到足以反射光,并因此可以用作反射电极。
根据本公开的实施方式的柔性显示器能够阻挡从塑料基板扩散的离子或杂质,并且通过形成包括SiNx层的缓冲层来防止湿气从外部渗透。
根据本公开的实施方式的柔性显示器能够通过使用相对于厚度具有良好的水蒸气透过率的SiNx层来在确保预定阻挡特性的同时实现具有薄厚度的缓冲层。因此,本公开的实施方式能够提供能够在确保显示装置的柔性的同时防止湿气从外部渗透的柔性显示器。
根据本公开的实施方式的柔性显示器能够通过形成包括SiNx层和堆叠在SiNx层上的SiOx层的缓冲层来防止SiNx层中包含的氢气进入氧化物半导体。因此,本公开的实施方式能够防止氧化物半导体的电特性的降低。
下面将通过比较例和实验例来描述根据本公开的实施方式的柔性显示器的效果。下面描述的实验仅是本公开的实施方式的示例,并且本公开的实施方式不限于以下实验例。图7示意性地例示了根据比较例和实验例的缓冲层的堆叠结构。图8是例示根据比较例和实验例的氧化物半导体薄膜晶体管的电流-电压特性的曲线图。
以下实验是当根据比较例的第一缓冲层和根据实验例的第一缓冲层具有相同的厚度时,在比较例和实施方式之间根据构成第一缓冲层的硅氧化物(SiOx)层和硅氮化物(SiNx)层的堆叠顺序的差异来检查氧化物半导体的特性的变化。
<比较例>
如图7的(a)所示,在聚酰亚胺(PI)基板上依次堆叠硅氮化物(SiNx)层、硅氧化物(SiOx)层和硅氮化物(SiNx)层,使得比较例与根据本公开的实施方式的第一缓冲层形成对照。SiNx层的厚度为SiOx层的厚度为
接下来,在SiNx层上堆叠硅氧化物(SiOx)层,使得比较例与根据本公开的实施方式的第二缓冲层形成对照。在SiOx层上制造包括IGZO有源层的薄膜晶体管。SiOx层的厚度为
<实验例>
如图7的(b)所示,构成根据本公开的实施方式的第一缓冲层的硅氮化物(SiNx)层、硅氮化物(SiNx)层和硅氧化物(SiOx)层依次堆叠在聚酰亚胺(PI)基板上。SiNx层的厚度为SiOx层的厚度为
接下来,堆叠构成本公开的实施方式的第二缓冲层的硅氧化物(SiOx)层,并且在SiOx层上制造包括IGZO有源层的薄膜晶体管。SiOx层的厚度为
图8例示了根据比较例和实验例的氧化物半导体薄膜晶体管的电流-电压特性的测量结果。
参照图8,根据比较例的氧化物半导体薄膜晶体管的阈值电压在负方向上移位-4.69V并且超过正常范围。此外,根据实验例的氧化物半导体薄膜晶体管的阈值电压在负方向上移位-0.03V并且处于正常范围内。
从比较例可以看出,当第一缓冲层包括SiNx层,并且SiNx层设置在第一缓冲层的最上层处时,存在于SiNx层中的氢气扩散到IGZO有源层并且改变器件特性。另一方面,如在实施例中那样,当第一缓冲层包括SiNx层并且在SiNx层上进一步形成SiOx层时,存在于SiNx层中的氢气进入IGZO有源层的量能够减少。因此,器件特性的变化能够减小。因此,本发明的实施方式包括具有SiNx层和SiOx层的第一缓冲层,并且将SiOx层设置在第一缓冲层中的SiNx层上,从而即使当SiNx层被使用时也能确保氧化物半导体薄膜晶体管的可靠性。
再次参照图8,根据比较例的氧化物半导体薄膜晶体管中的阈值电压的分散(scattering)程度为超过正常范围的Δ7.22。此外,根据实验例的氧化物半导体薄膜晶体管中的阈值电压的分散程度为正常范围内的Δ0.72。
更具体地,当根据CVD处理中的位置发生SiNx层的厚度变化时,SiNx层对氧化物半导体的影响根据位置而改变。结果,氧化物半导体的阈值电压的分散程度增加。
本发明的实施方式能够通过在第一缓冲层中的SiNx层上设置SiOx层来充分确保SiNx层和氧化物半导体之间的间隔距离。因此,即使当SiNx层形成为具有取决于位置的厚度变化时,本发明的实施方式也能够防止SiNx层对氧化物半导体的影响,从而确保了组件的可靠性。
虽然已经参照其多个示例性方面描述了方面,但是应当理解的是,本领域技术人员能够设计出将落入本公开的原理的范围内的许多其它修改和方面。更具体地,在说明书、附图和所附的权利要求的范围内,主题组合布置的各个组成部分和/或布置的各种变型和修改是可能的。除了组成部分和/或布置的变型和修改之外,替代用途对于本领域技术人员来说也将是显而易见的。

Claims (6)

1.一种显示器,该显示器包括:
塑料基板;
所述塑料基板上的氧化物半导体薄膜晶体管;
第一缓冲层,该第一缓冲层被设置在所述塑料基板上;
第二缓冲层,该第二缓冲层被设置在所述第一缓冲层上并且由硅氧化物SiOx形成;以及
有源层,该有源层被设置在所述第二缓冲层上并且由氧化物半导体形成,
其中,所述第一缓冲层包括:
下层,该下层与所述塑料基板直接接触并且由硅氮化物SiNx形成;以及
上层,该上层被设置在所述下层上并且由SiOx形成。
2.根据权利要求1所述的显示器,其中,所述下层的厚度等于或大于所述上层的厚度。
3.根据权利要求1所述的显示器,其中,所述下层包括分开沉积的第一下层和第二下层。
4.根据权利要求3所述的显示器,其中,所述第一下层的密度比所述第二下层的密度相对高。
5.根据权利要求1所述的显示器,该显示器还包括遮光层,该遮光层被设置在所述第一缓冲层和所述第二缓冲层之间并且与所述有源层交叠。
6.根据权利要求3所述的显示器,其中,所述第二下层形成在所述第一下层上,所述第一下层具有致密特性,并且所述第二下层具有多孔特性。
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