CN106206673A - Amoled显示装置 - Google Patents
Amoled显示装置 Download PDFInfo
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- CN106206673A CN106206673A CN201610819118.6A CN201610819118A CN106206673A CN 106206673 A CN106206673 A CN 106206673A CN 201610819118 A CN201610819118 A CN 201610819118A CN 106206673 A CN106206673 A CN 106206673A
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- 229920001621 AMOLED Polymers 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 11
- 230000003068 static effect Effects 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 241000218158 Clematis Species 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910001051 Magnalium Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical class [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
本发明提供一种AMOLED显示装置,通过在衬底基板上形成阴极连接层,并通过各结构层上的通孔实现阴极与阴极连接层的连接,使得AMOLED显示装置正常显示时,电流信号从所述阴极连接层传导至所述阴极,实现电流信号从每个像素内部传导至所述阴极,与传统的AMOLED显示装置相比,缩短了电流信号传导路径,并且降低了电流信号传导路径中的电阻,从而降低显示电路中的电压降,有利于改善AMOLED显示装置的显示效果并降低电能损耗;同时,由于阴极连接层设于衬底基板上,阴极与阴极连接层的连接只需要一个通孔,因此不会占用太多像素布局空间,不会影响AMOLED显示装置的整体像素布局。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种AMOLED显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED)显示器,也称为有机电致发光显示器,是一种新兴的平板显示装置,由于其具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽,可实现柔性显示与大面积全色显示等诸多优点,被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED,PMOLED)和有源矩阵型OLED(Active Matrix OLED,AMOLED)两大类,即直接寻址和薄膜晶体管矩阵寻址两类。其中,AMOLED具有呈阵列式排布的像素,属于主动显示类型,发光效能高,通常用作高清晰度的大尺寸显示装置。
AMOLED通常包括:基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下,通过载流子注入和复合导致发光。具体的,OLED显示器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极,在一定电压驱动下,电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层,电子和空穴分别经过电子传输层和空穴传输层迁移到发光层,并在发光层中相遇,形成激子并使发光分子激发,后者经过辐射弛豫而发出可见光。
图1为现有的一种AMOLED显示装置的结构示意图,所述AMOLED显示装置包括衬底基板100、设于所述衬底基板100上的栅极200、设于所述栅极200及衬底基板100上的栅极绝缘层300、设于所述栅极绝缘层300上且对应于所述栅极200上方的有源层400、设于所述有源层400及栅极绝缘层300上的刻蚀阻挡层500、设于所述刻蚀阻挡层500上的源极610与漏极620、设于所述源极610、漏极620及刻蚀阻挡层500上的第一平坦层710、设于所述第一平坦层710上且与所述漏极620相连的阳极800、设于所述阳极800及第一平坦层710上的第二平坦层720、设于所述第二平坦层720上的过孔725中的发光层900、以及设于所述发光层900及第二平坦层720上的阴极910;在该AMOLED显示装置中,所述阴极910为覆盖整个AMOLED显示装置的显示区域的整面电极,尺寸较大,这种AMOLED显示装置在正常显示过程中,电流信号需要从所述阴极910的边缘的某个位点传导至所述阴极910的中心及其它区域,传导路径较长,并且所述阴极910通常为厚度较薄的金属电极,电阻较大,在电流信号传导路径较长的情况下,整个显示电路中很容易出现电压降(IR Drop)的问题,即传导到阴极910上的实际电压比设定的电压要低,从而导致显示效果较差,且电能损耗较多。
针对上述问题,现有一种改善的方法,如图2所示,在所述AMOLED显示装置内部引入阴极连接线路,所述阴极连接线路包括与所述源极610及漏极620位于同一层的一金属块630,所述阴极910与所述金属块630之间的第一平坦层710与第二平坦层720上设有通孔750,所述阴极910与所述金属块630通过该通孔750相连接,这样的阴极连接线路使得外部电流信号从每个像素内部经由所述金属块630引入到所述阴极910上,省去了电流信号从所述阴极910边缘至中心的传导,缩短了电流信号的传导路径,并且通常所述金属块630选用电阻率较低的材料并设置较大的厚度,因此所述金属块630的电阻较小,使得整个显示电路的电阻降低,从而降低电压降,改善显示效果及电能损耗情况;但是,该方法依然存在一个问题,即,由于所述金属块630设置于每个像素的内部,因此需要占用一部分像素布局空间,从而对AMOLED显示装置的整体像素布局造成影响。
发明内容
本发明的目的在于提供一种AMOLED显示装置,可降低显示电路中的电压降,且不会影响AMOLED显示装置的整体像素布局。
为实现上述目的,本发明提供一种AMOLED显示装置,包括:衬底基板、设于所述衬底基板上的阴极连接层、设于所述阴极连接层上的缓冲层、设于所述缓冲层上的栅极、设于所述栅极及缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层及栅极绝缘层上的刻蚀阻挡层、设于所述刻蚀阻挡层上且分别对应于所述有源层两侧的第一通孔与第二通孔、设于所述刻蚀阻挡层上且分别经由所述第一通孔及第二通孔与所述有源层相接触的源极及漏极、设于所述源极、漏极及刻蚀阻挡层上的第一平坦层、设于所述第一平坦层上且对应于所述漏极上方的第三通孔、设于所述第一平坦层上且经由所述第三通孔与所述漏极相接触的阳极、设于所述阳极及第一平坦层上的第二平坦层、设于所述第二平坦层上且对应于所述阳极上方的第四通孔、设于所述第四通孔内且与所述阳极相接触的发光层、以及设于所述发光层与第二平坦层上的阴极;
所述缓冲层、栅极绝缘层、刻蚀阻挡层、第一平坦层及第二平坦层上设有第五通孔,所述阴极经由所述第五通孔与所述阴极连接层相连接。
每个发光层对应的一个像素中均设有一个第五通孔。
所述阴极连接层为连续不间断的整面金属层或者中间设有镂空区域的金属层;所述阴极连接层的尺寸小于等于所述衬底基板的尺寸。
所述阴极连接层的材料包括银、铝、铜及金中的至少一种。
所述阴极连接层的厚度为0.3μm~1μm。
所述阴极为连续不间断的整面金属层,所述阴极的尺寸为覆盖所述AMOLED显示装置的整个显示区域。
所述阴极为由镁层与铝层叠加构成的复合金属层,或者为由镁铝合金制备的单一金属层。
所述阴极的厚度为100nm~200nm。
所述阳极为反射型电极。
在本发明的一优选实施例中,所述AMOLED显示装置还包括一静电放电金属块,所述静电放电金属块与所述源极及漏极位于同一层,所述缓冲层、栅极绝缘层及刻蚀阻挡层上设有第六通孔,所述静电放电金属块经由所述第六通孔与所述阴极连接层相连接。
本发明的有益效果:本发明提供的一种AMOLED显示装置,通过在衬底基板上形成阴极连接层,并通过各结构层上的通孔实现阴极与阴极连接层的连接,使得AMOLED显示装置正常显示时,电流信号从所述阴极连接层传导至所述阴极,实现电流信号从每个像素内部传导至所述阴极,与传统的AMOLED显示装置相比,缩短了电流信号传导路径,并且降低了电流信号传导路径中的电阻,从而降低显示电路中的电压降,有利于改善AMOLED显示装置的显示效果并降低电能损耗;同时,由于阴极连接层设于衬底基板上,阴极与阴极连接层的连接只需要一个通孔,因此不会占用太多像素布局空间,不会影响AMOLED显示装置的整体像素布局。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为现有的一种AMOLED显示装置的结构示意图;
图2为现有的另一种AMOLED显示装置的结构示意图;
图3为本发明的AMOLED显示装置的第一实施例的结构示意图;
图4为本发明的AMOLED显示装置的第二实施例的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3,本发明提供一种AMOLED显示装置,包括:衬底基板10、设于所述衬底基板10上的阴极连接层11、设于所述阴极连接层11上的缓冲层12、设于所述缓冲层12上的栅极13、设于所述栅极13及缓冲层12上的栅极绝缘层14、设于所述栅极绝缘层14上且对应于所述栅极13上方的有源层15、设于所述有源层15及栅极绝缘层14上的刻蚀阻挡层20、设于所述刻蚀阻挡层20上且分别对应于所述有源层15两侧的第一通孔21与第二通孔22、设于所述刻蚀阻挡层20上且分别经由所述第一通孔21及第二通孔22与所述有源层15相接触的源极31及漏极32、设于所述源极31、漏极32及刻蚀阻挡层20上的第一平坦层40、设于所述第一平坦层40上且对应于所述漏极32上方的第三通孔43、设于所述第一平坦层40上且经由所述第三通孔43与所述漏极32相接触的阳极50、设于所述阳极50及第一平坦层40上的第二平坦层60、设于所述第二平坦层60上且对应于所述阳极50上方的第四通孔64、设于所述第四通孔64内且与所述阳极50相接触的发光层70、以及设于所述发光层70与第二平坦层60上的阴极80;
所述缓冲层12、栅极绝缘层14、刻蚀阻挡层20、第一平坦层40及第二平坦层60上设有第五通孔95,所述阴极80经由所述第五通孔95与所述阴极连接层11相连接。
具体的,所述AMOLED显示装置中,每个发光层70对应的一个像素中均设有一个第五通孔95,使得电流信号从每个像素内部传导至所述阴极80,从而使得每个像素中从所述阴极连接层11传导至所述阴极80的电流信号的传导路径保持一致并且相对于传统的电流传导路径均缩短,有利于降低整个显示电路中的电压降。
具体的,所述阴极连接层11为连续不间断的整面金属层或者中间设有镂空区域的金属层;所述阴极连接层11的尺寸小于等于所述衬底基板10的尺寸。
具体的,所述阴极连接层11的材料为电阻率低的导电材料;优选的,所述阴极连接层11的材料包括银(Ag)、铝(Al)、铜(Cu)及金(Au)中的至少一种。
具体的,所述阴极连接层11的厚度为0.3μm~1μm,优选为0.5μm,并且所述阴极连接层11的厚度越大,所述阴极连接层11的电阻越低。
具体的,所述阴极80为连续不间断的整面金属层,所述阴极80的尺寸为覆盖所述AMOLED显示装置的整个显示区域,即多个像素中的发光层70共用同一个阴极80。
具体的,所述阴极80为由镁层与铝层叠加构成的复合金属层,或者为由镁铝合金制备的单一金属层。
具体的,所述阴极80的厚度为100nm~200nm,优选为100nm。
具体的,本发明的AMOLED显示装置为顶发光型显示装置,即所述阴极80一侧为出光侧,因此所述阴极连接层11的设置不会对AMOLED显示装置的画面显示造成影响。
进一步的,由于本发明的AMOLED显示装置为顶发光型显示装置,因此所述阳极50为反射型电极;优选的,所述阳极50为由两氧化铟锡(ITO)层夹合一银(Ag)层构成的复合层。
请参阅图4,为本发明的AMOLED显示装置的第二实施例,在该实施例中,所述AMOLED显示装置还包括一静电放电金属块35,所述静电放电金属块35与所述源极31及漏极32位于同一层,所述缓冲层12、栅极绝缘层14及刻蚀阻挡层20上设有第六通孔96,所述静电放电金属块35经由所述第六通孔96与所述阴极连接层11相连接,从而将所述静电放电金属块35上吸收的静电电荷引入到面积较大的阴极连接层11上并在所述阴极连接层11上释放掉。
具体的,所述衬底基板10为玻璃基板或塑料基板;
所述栅极13、源极31、漏极32及静电放电金属块35的材料为金属,优选为钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的至少一种;
所述缓冲层12、栅极绝缘层14及刻蚀阻挡层20的材料分别包括氧化硅(SiOx)与氮化硅(SiNx)的至少一种;
所述有源层15的材料包括非晶硅、多晶硅及金属氧化物半导体中的至少一种;
所述第一平坦层40与第二平坦层60的材料为有机绝缘材料;
所述发光层70的材料为有机发光材料。
综上所述,本发明提供一种AMOLED显示装置,通过在衬底基板上形成阴极连接层,并通过各结构层上的通孔实现阴极与阴极连接层的连接,使得AMOLED显示装置正常显示时,电流信号从所述阴极连接层传导至所述阴极,实现电流信号从每个像素内部传导至所述阴极,与传统的AMOLED显示装置相比,缩短了电流信号传导路径,并且降低了电流信号传导路径中的电阻,从而降低显示电路中的电压降,有利于改善AMOLED显示装置的显示效果并降低电能损耗;同时,由于阴极连接层设于衬底基板上,阴极与阴极连接层的连接只需要一个通孔,因此不会占用太多像素布局空间,不会影响AMOLED显示装置的整体像素布局。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种AMOLED显示装置,其特征在于,包括:衬底基板(10)、设于所述衬底基板(10)上的阴极连接层(11)、设于所述阴极连接层(11)上的缓冲层(12)、设于所述缓冲层(12)上的栅极(13)、设于所述栅极(13)及缓冲层(12)上的栅极绝缘层(14)、设于所述栅极绝缘层(14)上且对应于所述栅极(13)上方的有源层(15)、设于所述有源层(15)及栅极绝缘层(14)上的刻蚀阻挡层(20)、设于所述刻蚀阻挡层(20)上且分别对应于所述有源层(15)两侧的第一通孔(21)与第二通孔(22)、设于所述刻蚀阻挡层(20)上且分别经由所述第一通孔(21)及第二通孔(22)与所述有源层(15)相接触的源极(31)及漏极(32)、设于所述源极(31)、漏极(32)及刻蚀阻挡层(20)上的第一平坦层(40)、设于所述第一平坦层(40)上且对应于所述漏极(32)上方的第三通孔(43)、设于所述第一平坦层(40)上且经由所述第三通孔(43)与所述漏极(32)相接触的阳极(50)、设于所述阳极(50)及第一平坦层(40)上的第二平坦层(60)、设于所述第二平坦层(60)上且对应于所述阳极(50)上方的第四通孔(64)、设于所述第四通孔(64)内且与所述阳极(50)相接触的发光层(70)、以及设于所述发光层(70)与第二平坦层(60)上的阴极(80);
所述缓冲层(12)、栅极绝缘层(14)、刻蚀阻挡层(20)、第一平坦层(40)及第二平坦层(60)上设有第五通孔(95),所述阴极(80)经由所述第五通孔(95)与所述阴极连接层(11)相连接。
2.如权利要求1所述的AMOLED显示装置,其特征在于,每个发光层(70)对应的一个像素中均设有一个第五通孔(95)。
3.如权利要求1所述的AMOLED显示装置,其特征在于,所述阴极连接层(11)为连续不间断的整面金属层或者中间设有镂空区域的金属层;所述阴极连接层(11)的尺寸小于等于所述衬底基板(10)的尺寸。
4.如权利要求1所述的AMOLED显示装置,其特征在于,所述阴极连接层(11)的材料包括银、铝、铜及金中的至少一种。
5.如权利要求1所述的AMOLED显示装置,其特征在于,所述阴极连接层(11)的厚度为0.3μm~1μm。
6.如权利要求1所述的AMOLED显示装置,其特征在于,所述阴极(80)为连续不间断的整面金属层,所述阴极(80)的尺寸为覆盖所述AMOLED显示装置的整个显示区域。
7.如权利要求1所述的AMOLED显示装置,其特征在于,所述阴极(80)为由镁层与铝层叠加构成的复合金属层,或者为由镁铝合金制备的单一金属层。
8.如权利要求1所述的AMOLED显示装置,其特征在于,所述阴极(80)的厚度为100nm~200nm。
9.如权利要求1所述的AMOLED显示装置,其特征在于,所述阳极(50)为反射型电极。
10.如权利要求1所述的AMOLED显示装置,其特征在于,还包括一静电放电金属块(35),所述静电放电金属块(35)与所述源极(31)及漏极(32)位于同一层,所述缓冲层(12)、栅极绝缘层(14)及刻蚀阻挡层(20)上设有第六通孔(96),所述静电放电金属块(35)经由所述第六通孔(96)与所述阴极连接层(11)相连接。
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US20180219056A1 (en) | 2018-08-02 |
WO2018045658A1 (zh) | 2018-03-15 |
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US10074711B2 (en) | 2018-09-11 |
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