US20100102335A1 - Organic el display and method of manufacturing the same - Google Patents
Organic el display and method of manufacturing the same Download PDFInfo
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- US20100102335A1 US20100102335A1 US12/604,471 US60447109A US2010102335A1 US 20100102335 A1 US20100102335 A1 US 20100102335A1 US 60447109 A US60447109 A US 60447109A US 2010102335 A1 US2010102335 A1 US 2010102335A1
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- auxiliary wiring
- electrode
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- reverse bias
- wiring
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13069—Thin film transistor [TFT]
Definitions
- the present invention relates to an organic EL display provided with an auxiliary wiring and a method of manufacturing the same.
- an organic EL element using an electro luminescence (EL) phenomenon of an organic material as a light emitting element capable of emitting high-luminance light by low-voltage DC driving.
- EL electro luminescence
- a simple matrix method and an active matrix method are mentioned. In the case where the number of pixels is large, the active matrix method is suitable.
- an organic EL display of the active matrix method a thin film transistor for driving each pixel (organic EL element), a first electrode connected to the thin film transistor, an organic layer including a light emission layer, and a second electrode are provided in this order on a substrate.
- organic EL display to assure the aperture ratio of each pixel, it is preferable to extract light from the side opposite to the substrate, that is, to employ the surface emission structure (called “surface emission type” below).
- the second electrode is made of a transparent or semi-transparent electrode material.
- a transparent electrode material has generally a high electric resistance value and the second electrode is formed as an electrode common to the pixels. Consequently, in an organic EL display of the surface emission type, a voltage drop easily occurs in the second electrode. It causes significant deterioration in display performance.
- a method of providing an auxiliary wiring in a region between pixels is used. Concretely, an auxiliary wiring electrically insulated from the first electrode is disposed on the first electrode side on the substrate and is electrically connected to the second electrode.
- an organic layer is formed on an entire surface of the substrate. Since the organic layer is formed also on the auxiliary wiring, there is the possibility that contact between the auxiliary wiring and the second electrode deteriorates due to the organic layer. Even in the case of forming an organic layer on a pixel unit basis with a mask, if mask positioning precision or precision of processing the opening in the mask is low, the organic layer is formed on the auxiliary wiring, and it results in deterioration in contact with the second electrode.
- an organic EL display including: a plurality of pixels each having, in order from a substrate side, a first electrode, an organic layer including a light emission layer, and a second electrode; an auxiliary wiring disposed in a periphery region of each of the plurality of pixels and conducted to the second electrode; and another auxiliary wiring disposed apart from the auxiliary wiring at least in a part of outer periphery of a formation region of the auxiliary wiring in a substrate surface.
- a method of manufacturing an organic EL display including the steps of: forming a first electrode for each of pixels on a substrate; forming an auxiliary wiring in a peripheral region of each of the pixels on the substrate; forming another auxiliary wiring so as to be electrically insulated from the auxiliary wiring; forming an organic layer including a light emission layer over the first electrode and the auxiliary wiring; forming a connection hole in a region corresponding to the auxiliary wiring in the organic layer by applying a reverse bias voltage to the organic layer via the auxiliary wiring and the another auxiliary wiring; and forming a second electrode so as to bury the connection hole on the organic layer.
- an organic EL display of an embodiment of the invention by applying a reverse bias voltage to the organic layer through an auxiliary wiring and another auxiliary wiring formed so as to be electrically insulated, only the region on the auxiliary wiring in the organic layer is selectively removed. By burying the removed region as a connection hole with the second electrode, excellent electric connection between the auxiliary wiring and the second electrode is assured.
- FIG. 2 is a diagram illustrating a plane configuration of an auxiliary wiring, a reverse bias wiring, and the like illustrated in FIG. 1 .
- FIGS. 5A and 5B are cross sections illustrating a process subsequent to FIGS. 4A and 4B .
- FIG. 8 is a cross section illustrating a process subsequent to FIG. 7 .
- FIG. 9 is a characteristic diagram illustrating current value changes according to an embodiment of the present invention.
- FIG. 10 is a cross section illustrating a schematic configuration of an organic EL display according to a modification of the invention.
- FIG. 11 is a diagram illustrating a plane configuration of an auxiliary wiring, a reverse bias wiring, and the like illustrated in FIG. 10 .
- a pixel drive circuit (the details will be described later) including TFTs (Thin Film Transistors) 11 for driving the organic EL elements 10 R, 10 G, and 10 B and a planarization layer 12 are formed.
- TFTs Thin Film Transistors
- a planarization layer 12 Over the planarization layer 12 , the organic EL elements 10 R, 10 G, and 10 B are provided.
- the organic EL elements 10 R, 10 G, and 10 B on the drive-side substrate 10 are sealed by a sealing-side substrate 20 with a protection film 30 and an adhesive layer 31 in between.
- the TFTs 11 are drive elements for driving the organic EL elements 10 R, 10 G, and 10 B by the active matrix method and may be of the bottom gate type or the top gate type.
- the gate of the TFT 11 is connected to a scan drive circuit, and the source and drain (which are not illustrated) are connected to a wiring layer 11 B provided with an interlayer insulating film 11 A made of, for example, oxide silicon or PSG (Phospho-Silicate Glass) in between.
- the wiring layer 11 B is constructed by, for example, a single-layer film made of aluminum (Al) only or an aluminum alloy, a stack film of titanium (Ti) and aluminum, or a three-layer film of titanium, aluminum, and titanium.
- the planarization layer 12 is formed over the TFT 11 , the interlayer insulating film 11 A, and the wiring layer 11 B.
- the planarization layer 12 is provided to planarize the surface of the drive-side substrate 10 on which the TFTs 11 are formed and to make the thickness of each of the layers in the organic EL elements 10 R, 10 G, and 10 B uniform.
- the planarization layer 12 is made of an insulating material and, as will be specifically described later, also plays the role of bringing electric insulation between an auxiliary wiring 14 and a reverse bias wiring 17 B.
- the insulating material for example, an organic material such as polyimide resin, acrylic resin, or novolac resin, or an inorganic material such as silicon oxide (SiO 2 ) may be used.
- a contact hole 12 a is provided for each pixel.
- the first electrode 13 is disposed for each pixel on the planarization layer 12 and functions as an electrode for injecting holes to the organic layer 16 .
- the first electrode 13 is used also as a reflection layer, so it is desirable to have reflectance as high as possible from the viewpoint of increasing luminance efficiency.
- a metal element itself such as silver (Ag), aluminum, molybdenum (Mo), or chromium (Cr) or its alloy is used and thickness is, for example, 100 nm to 500 nm both inclusive.
- the first electrode 13 may have a single-layer structure or a multilayer structure.
- the auxiliary wiring 14 may be made of a conductive material different from that of the first electrode 13 but, preferably, made of the same material as that of the first electrode 13 .
- the auxiliary wiring 14 and the first electrode 13 are made of the same material, the auxiliary wiring 14 and the first electrode 13 are allowed to be patterned in the same process in a manufacturing process which will be described later, so that the man-hour is reduced.
- the detailed configuration of the auxiliary wiring 14 will be described later.
- the inter-pixel insulating film 15 is provided to bring electric insulation between the first and second electrodes 13 and 18 and between the first electrode 13 and the auxiliary wiring 14 .
- the inter-pixel insulating film 15 is made of, for example, an insulating material such as silicon oxide or polyimide.
- an opening 15 A corresponding to the first electrode 13 and an opening 15 B corresponding to the auxiliary wiring 14 are provided in the inter-pixel insulating film 15 .
- the organic layer 16 , the reverse bias electrode 17 , and the second electrode 18 are stacked in this order.
- the second electrode 18 is buried. That is, the region corresponding to the opening 15 A is a light emitting region in each of the organic EL elements 10 R, 10 G, and 10 B, and the opening 15 B functions as a part of the contact hole 16 A.
- the organic layer 16 is formed so as to cover the side faces and the top face of the inter-pixel insulating film 15 and the top face of the first electrode 13 exposed by the opening 15 A.
- the organic layer 16 is interrupted around just above the opening 15 B in the inter-pixel insulating film 15 and serves as a part of the contact hole 16 A. A concrete configuration of the organic layer 16 will be described below.
- the organic layer 16 has the same stack-layer structure regardless of the light emission colors of the organic EL elements 10 R, 10 G, and 10 B.
- a hole injection layer, a hole transport layer, a red light emission layer, a green light emission layer, a blue light emission layer, and an electron transport layer are stacked.
- the hole injection layer is provided to increase the hole injection efficiency and is made of, for example, 4,4′,4′′-tris(3-methylphenylamino) triphenylamine (m-MTDATA) or 4,4′,4′′-tris(2-naphthylfenylamino) triphenylamine (2-TNATA).
- the hole transport layer is provided to increase the hole injection efficiency and is made of, for example, 4,4′-bis(N-1-naphthyl-N-fenylamino) biphenyl ( ⁇ -NPD).
- the thickness of the reverse bias electrode 17 is, for example, 3 nm to 20 nm. The detailed configuration of the reverse bias electrode 17 will be described later.
- the second electrode 18 functions as an electrode for injecting electrons to the organic layer 16 .
- the material of the second electrode 18 is, for example, a material having conductivity and light transmittance, for example, a transparent or semi-transparent electrode material such as indium tin oxide, zinc oxide, magnesium silver alloy, or indium zinc oxide.
- FIG. 2 schematically illustrates a plane configuration of the auxiliary wiring 14 and the reverse bias wiring 17 B over the planarization layer 12 and the formation regions of the reverse bias electrode 17 and the second electrode 18 .
- a cross section taken along line I-I of FIG. 2 corresponds to FIG. 1 .
- the reverse bias wiring 17 B may be made of a material different from that of the first electrode 13 and the auxiliary wiring 14 but, preferably, made of the same material as that of the first electrode 13 and the auxiliary wiring 14 .
- the reverse bias wiring 17 B is made of the same material as that of the first electrode 13 and the auxiliary wiring 14 , the first electrode 13 , the auxiliary wiring 14 , and the reverse bias wiring 17 B are allowed to be patterned in the same process in a manufacturing process which will be described later.
- the reverse bias electrode 17 is disposed on the entire face of the planarization layer 12 (for example, the region surrounded by an alternate long and short dash line in FIG. 2 ) so as to cover the organic layer 16 and the formation region of the reverse bias wiring 17 B exposed from the organic layer 16 .
- the second electrode 18 is provided from the display region to the region on the outside of the peripheral region 142 of the auxiliary wiring 14 and the inside of the formation region of the reverse bias wiring 17 B (for example, the region surrounded by an alternate long and two short dashes line in FIG. 2 ).
- the first pad 14 A is attached to a part of the peripheral region 142 of the auxiliary wiring 14 .
- the first pad 14 A is formed, for example, together with the wiring layer 11 B over the interlayer insulating film 11 A and is in contract with the auxiliary wiring 14 via an opening part (not illustrated) formed in the planarization layer 12 .
- a part facing the reverse bias electrode 17 and the reverse bias wiring 17 B, of the first pad 14 A is covered with, for example, a part (covering part 12 A) of the planarization layer 12 .
- the auxiliary wiring 14 and the first pad 14 A are disposed so as not to be in direct contact with both of the reverse bias electrode 17 and the reverse bias wiring 17 B.
- the second pad 17 A is attached to a part of the reverse bias wiring 17 B.
- the second pad 17 A has an exposed part 17 C which is exposed from the planarization layer 12 .
- the reverse bias wiring 17 B and the second pad 17 A are at least partially in direct contact with the reverse bias electrode 17 .
- the auxiliary wiring 14 corresponds to an example of the “auxiliary wiring” of the present invention
- the reverse bias wiring 17 B corresponds to an example of the “another auxiliary wiring”
- the reverse bias electrode 17 corresponds to an example of the “third electrode”.
- FIGS. 3A and 3B to FIG. 8 illustrate a method of manufacturing the organic EL display 1 in process order.
- the TFTs 11 and the interlayer insulating film 11 A are formed on the drive-side substrate 10 by a known thin film process.
- the wiring layer 11 B made of the above-described material is formed on the interlayer insulating film 11 A.
- a single-layer film or a multilayer film is formed using the above-described material by, for example, sputtering or the like and, after that, the wiring layer 11 B is patterned by using, for example, the lithography method.
- the first pads 14 are formed over the interlayer insulating film 11 A.
- the planarization layer 12 made of the above-described material is formed by, for example, spin coating on the entire surface of the drive-side substrate 10 .
- the opening 12 a is formed in a region corresponding to the wiring layer 11 B.
- an opening (not illustrated) for making the first pad 14 A and the auxiliary wiring 14 contact with each other is formed.
- a metal layer 13 - 1 is formed on the entire surface of the planarization layer 12 by, for example, sputtering.
- the metal layer 13 - 1 is made of the material constructing the first electrode 13 , the auxiliary wiring 14 , and the reverse bias wiring 17 B (not illustrated in FIGS. 4A and 4B ).
- the first electrode 13 is patterned in each pixel region, and the auxiliary wiring 14 is patterned in the peripheral region of the first electrode 13 .
- the reverse bias wiring 17 B is simultaneously patterned in the peripheral region of the auxiliary wiring 14 so as to be apart from the auxiliary wiring 14 .
- the second pad 17 A is attached to the reverse bias wiring 17 B.
- the auxiliary wiring 14 and the first pad 14 A are electrically connected, and the reverse bias wiring 17 B and the second pad 17 A are electrically connected.
- the inter-pixel insulating film 15 made of the above-described material is formed by, for example, CVD (Chemical Vapor Deposition), and the parts corresponding to the first electrode 13 and the auxiliary wiring 14 are selectively removed by using, for example, the lithography method to thereby form the openings 15 A and 15 B.
- CVD Chemical Vapor Deposition
- the organic layer 16 made of the above-described material is formed on the inter-pixel insulating film 15 so as to cover the display region by, for example, the vacuum deposition method.
- the organic layer 16 is formed in the opening 15 A in the inter-layer insulating film 15 and buried in the opening 15 B.
- the organic layer 16 is formed in the region on the inside of the formation region of the reverse bias wiring 17 B, and the reverse bias wiring 17 B is exposed from the organic layer 16 .
- the reverse bias electrode 17 made of the above-described material is formed so as to cover the entire surface of the planarization layer 12 , that is, the organic layer 16 and the reverse bias wiring 17 B on the planarization layer 12 by using, for example, sputtering or the like.
- the auxiliary wiring 14 and the reverse bias wiring 17 B are electrically insulated from each other.
- the first pad 14 A so as to be covered with the planarization layer 12
- the first pad 14 A is electrically insulated from both of the reverse bias electrode 17 and the reverse bias wiring 17 B.
- the organic layer 16 formed so as to cover the entire pixel region the auxiliary wiring 14 and the reverse bias electrode 17 are electrically insulated from each other.
- the reverse bias wiring 17 B is formed so as to be exposed from the organic layer 16 , and the reverse bias electrode 17 is formed on the entire surface of the planarization layer 12 , thereby electrically connecting the reverse bias wiring 17 B and the reverse bias electrode 17 .
- the reverse bias wiring 17 B is formed so as to be exposed from the organic layer 16 , and the reverse bias electrode 17 is formed on the entire surface of the planarization layer 12 , thereby electrically connecting the reverse bias wiring 17 B and the reverse bias electrode 17 .
- auxiliary wiring 14 and the reverse bias wiring 17 B (reverse bias electrode 17 ) formed as described above, reverse bias voltage is applied to the organic layer 16 .
- the auxiliary wiring 14 and the first pad 14 A are electrically insulated from both of the reverse bias electrode 17 and the reverse bias wiring 17 B, independent potentials are applied across the auxiliary wiring 14 and the reverse bias wiring 17 B.
- the drive-side substrate 10 over which the reverse bias electrode 17 is formed is disposed, for example, in oxygen concentration of about 0.1 to 20% and in dew-point temperature atmosphere of ⁇ 60° or less, a probe comes into contact with each of the first and second pads 14 A and 17 A, and the potential relation is given so that the reverse bias voltage is applied to the organic layer 16 .
- the reverse bias voltage is a voltage of the degree at which the organic layer 16 is blown, for example, 50V or higher.
- the second electrode 18 made of the above-described material is formed in all of the display region by, for example, sputtering. At this time, the second electrode 18 is formed so as to be buried in the contact hole 16 A formed in the organic layer 16 . As a result, in the contact hole 16 A, the auxiliary wiring 14 and the second electrode 18 are electrically connected to each other. After that, on the second electrode 18 , the protection film 30 made of the above-described material is formed.
- the adhesive layer 31 made of, for example, a thermoset resin is applied on the protection film 30 and, after that, the sealing-side substrate 20 is adhered onto the adhesive layer 31 .
- the color filters on the sealing-side substrate 20 and the organic EL elements 10 R, 10 G, and 10 B are relatively aligned, and a predetermined heating process is performed to set the thermoset resin of the adhesive layer 31 .
- the organic EL display 1 illustrated in FIG. 1 is completed.
- the auxiliary wiring 14 is patterned together with the first electrode 13 on the side of the drive-side substrate 10 and, after that, the organic layer 16 is formed in the entire display region. Since the auxiliary wiring 14 is disposed so as to suppress voltage drop of the second electrode 18 , the electric connection to the second electrode 18 formed in a process of a post stage has to be assured. However, in the case of forming the organic layer 16 in all of the display region as described above, the surface of the auxiliary wiring 14 is also covered with the organic layer 16 , and it becomes uneasy to assure the electric connection between the auxiliary wiring 14 and the second electrode 18 .
- the reverse bias electrode 17 and the reverse bias wiring 17 B are formed so as to be electrically insulated from the auxiliary wiring 14 with the organic layer 16 in between, and the reverse bias voltage is applied to the organic layer 16 via the auxiliary wiring 14 and the reverse bias wiring 17 B.
- the auxiliary wiring 14 is exposed from the organic layer 16 .
- FIG. 9 illustrates, as an example, changes in a current value with respect to application time (hour:minute:second) in the case where reverse bias voltage of 50V is continuously applied across the auxiliary wiring 14 and the reverse bias wiring 17 B under environments of oxygen concentration of 20% and dew temperature of ⁇ 60° or less.
- the current value starts dropping at the time point after about 15 minutes since voltage application.
- the organic layer 16 over the auxiliary wiring 14 was sufficiently blown after about one hour.
- the auxiliary wiring 14 and the reverse bias wiring 17 B are formed in the same layer, for example, on the planarization layer 12 , the auxiliary wiring 14 and the reverse bias wiring 17 B may be formed by the same thin film process. Thus, the manufacturing process becomes more facilitated.
- FIG. 10 illustrates a sectional structure of an organic EL display 2 according to a modification.
- the organic EL display 2 is a display device of an active matrix type for individually driving a plurality of pixels arranged in a matrix.
- the organic EL elements 10 R, 10 G, and 10 B as pixels of three primary colors of R, G, and B are provided in order in a matrix.
- a pixel drive circuit (the details will be described later) including the TFTs 11 and a planarization layer 22 are formed.
- the organic EL elements 10 R, 10 G, and 10 B are provided.
- an auxiliary wiring 24 is provided together with a wiring 21 on the interlayer insulating film 11 A, and the reverse bias wiring 17 B is disposed over the planarization layer 22 . That is, the auxiliary wiring 24 and the reverse bias wiring 17 B are provided in different layers. Contact holes 26 A penetrating the reverse bias electrode 17 , the organic layer 16 , the inter-pixel insulating film 15 , and the planarization layer 22 are provided. A second electrode 25 is buried in the contact hole 26 A and is electrically connected to the auxiliary wiring 24 .
- the auxiliary wiring 21 is provided to connect the TFT 11 and the first electrode 13 and is made of a material similar to that of the wiring layer 11 B in the foregoing embodiment.
- the planarization layer 22 planarizes the surface of the drive-side substrate 10 on which the TFT 11 is formed and makes the thicknesses of the layers of the organic EL elements 10 R, 10 G, and 10 B uniform.
- the planarization layer 22 is made of an insulating material similar to that of the planarization layer 12 .
- the planarization layer 22 has a contact hole 22 a above the wiring 21 , and a contact hole 22 b above the auxiliary wiring 24 .
- the first electrode 13 is buried.
- the second electrode 25 is buried.
- the contact hole 22 b is a part of the contact hole 26 A.
- the auxiliary wiring 24 is provided to suppress voltage drop in the second electrode 25 , is electrically insulated from the first electrode 13 and, on the other hand, provided so as to be conducted with the second electrode 25 .
- the reverse bias wiring 17 B (not illustrated in FIG. 10 ) is disposed apart from the auxiliary wiring 24 and is connected to the reverse bias electrode 17 .
- FIG. 11 schematically illustrates the plane configuration of the auxiliary wiring 24 and the reverse bias wiring 17 B and the formation region of the reverse bias electrode 17 and the second electrode 25 .
- the auxiliary wiring 24 is disposed in an inter-pixel region 241 between the pixels P below the planarization layer 22 and in a peripheral region 242 surrounding a display region formed by all of the pixels P. That is, like the auxiliary wiring 14 of the foregoing embodiment, the plane shape of the auxiliary wiring 24 is a shape obtained by partitioning the inside of the rectangular frame in a lattice shape in the substrate face. Above the planarization layer 22 , the reverse bias wiring 17 B is disposed so as to surround the peripheral region 242 of the auxiliary wiring 24 from the outside and so as to be apart from the auxiliary wiring 24 .
- the reverse bias wiring 17 B may be made of a material similar to that of the first electrode 13 and, preferably, made of the same material as that of the first electrode 13 , so that the first electrode 13 and the reverse bias wiring 17 B are allowed to be patterned in the same process in a manufacturing process.
- the organic layer 16 (not illustrated in FIG. 11 ) is formed in the entire display region. Over the planarization layer 22 , the organic layer 16 is provided on the outside of the peripheral region 242 of the auxiliary wiring 24 and on the inside of the formation region of the reverse bias wiring 17 B. That is, the auxiliary wiring 24 is covered with the organic layer 16 and, on the other hand, the reverse bias wiring 17 B is exposed from the organic layer 16 .
- the reverse bias electrode 17 is disposed on the entire face of the planarization layer 22 (for example, the region surrounded by an alternate long and short dash line in FIG. 11 ).
- the second electrode 25 is provided from the display region to the region on the outside of the peripheral region 242 of the auxiliary wiring 24 and the inside of the formation region of the reverse bias wiring 17 B (for example, the region surrounded by an alternate long and two short dashes line in FIG. 11 ).
- first and second pads 24 A and 17 A are attached, respectively.
- the first and second pads 24 A and 17 A are provided to apply reverse bias voltage to the organic layer 16 via the auxiliary wiring 24 and the reverse bias wiring 17 B (reverse bias electrode 17 ), respectively, in the manufacturing process.
- the auxiliary wiring 24 and the reverse bias wiring 17 B are provided in different layers, that is, partitioned by the planarization layer 22 , so that the auxiliary wiring 24 and the first pad 24 A are disposed so as not to be in direct contact with both of the reverse bias electrode 17 and the reverse bias wiring 17 B.
- the reverse bias wiring 17 B and the second pad 17 A disposed so as to be exposed from the organic layer 16 are in direct contact with the reverse bias electrode 17 at least in a part.
- the organic EL display 2 having the configuration as described above may be manufactured, for example, in a manner similar to the organic EL display 1 of the foregoing embodiment.
- the TFTs 11 are formed by patterning on the drive-side substrate 10 by, for example, sputtering and lithography.
- the planarization layer 22 is formed by using the above-described insulating material and, after that, the contact holes 22 a and 22 b are formed in a region above the wiring 21 and a region over the auxiliary wiring 24 .
- the first electrode 13 is formed by patterning so as to bury the contact hole 22 a , and the inter-pixel insulating film 15 having an opening is formed in each of the regions corresponding to the first electrode 13 and the auxiliary wiring 24 .
- the organic layer 16 and the reverse bias electrode 17 are formed in order.
- the auxiliary wiring 24 and the first pad 24 A, and the reverse bias electrode 17 and the reverse bias wiring 17 B are electrically insulated from each other with the organic layer 16 therebetween by the interposition of the planarization layer 22 , so that potentials are applied independently from each other. Therefore, as described above, by contacting the first and second pads 24 A and 17 A with a probe, the reverse bias voltage is applied to the organic layer 16 via the auxiliary wiring 24 and the reverse bias wiring 17 B. In such a manner, by removing the organic layer 16 formed over the auxiliary wiring 24 , the contact holes 26 A are formed. After that, by burying the contact holes 26 A with the second electrodes 25 over the reverse bias electrode 17 , electric connection between the auxiliary wiring 24 and the second electrode 25 is assured. Subsequently, the protection film 30 is formed over the second electrode 25 and, after that, in a manner similar to the foregoing embodiment, the organic EL display 2 illustrated in FIG. 10 is completed.
- the auxiliary wiring 24 and the reverse bias wiring 17 B may be disposed in layers different from each other. That is, as long as the auxiliary wiring 24 and the reverse bias wiring 17 B are electrically insulated from each other and independent potentials are applicable, the auxiliary wiring 24 and the reverse bias wiring 17 B may be provided in the same layer or different layers. With such a configuration, the reverse bias voltage is applicable across the auxiliary wiring 24 and the reverse bias wiring 17 B and, as a result, the organic layer 16 over the auxiliary wiring 24 is selectively removable.
- the auxiliary wiring 24 is provided over the interlayer insulating film 11 A and the reverse bias wiring 17 B is provided over the planarization layer 22 , so that they are insulated from each other by the planarization layer 22 . Therefore, unlike the foregoing embodiment, it is unnecessary to lead a part of the planarization layer so as to cover the first pad.
- the organic EL displays 1 and 2 is applicable to electronic devices in all of fields for displaying a video signal entered from the outside or generated internally as an image or a video image, such as a television apparatus, a digital still camera, a notebook-sized personal computer, a portable terminal device such as a cellular phone, and a video camera.
- the organic EL displays 1 and 2 are assembled, for example, as a module illustrated in FIG. 12 , in various electronic devices in application examples 1 to 5 and the like which will be described later.
- the module has, at one side of the drive-side substrate 10 , a region 210 exposed from the sealing-side substrate 20 .
- wirings of a signal line drive circuit 120 and a scan line drive circuit 130 which will be described later are extended and external connection terminals (not illustrated) are formed.
- the external connection terminal may be provided with a flexible printed circuit (FPC) 220 for inputting/outputting signals.
- FPC flexible printed circuit
- a display region 110 and the signal line drive circuit 120 and the scan line drive circuit 130 as drivers for displaying video images are formed.
- a pixel drive circuit 140 is formed.
- the organic EL elements 10 R, 10 G, and 10 B are disposed in a matrix as a whole.
- the pixel drive circuit 140 is, as illustrated in FIG. 14 , an active-type drive circuit having a drive transistor Tr 1 and a write transistor Tr 2 formed in a layer below the first electrode 13 , a capacitor (retentive capacitor) Cs between the transistors Tr 1 and Tr 2 , and the organic EL element 10 R (or 10 G or 10 B) connected in series with the drive transistor Tr 1 between a first power line (Vcc) and a second power line (GND).
- the drive transistor Tr 1 and the write transistor Tr 2 are common thin film transistors (TFTs).
- the configuration may be, for example, an inversely-staggered structure (so-called bottom-gate type) or a staggered structure (top-gate type) and is not limited.
- a plurality of signal lines 120 A are disposed in the column direction, and a plurality of scan lines 130 A are disposed in the row direction.
- the intersecting point between the signal line 120 A and the scan line 130 A corresponds to one (sub pixel) of the organic EL elements 10 R, 10 G, and 10 B.
- Each signal line 120 A is connected to the signal line drive circuit 120 , and an image signal is supplied from the signal line drive circuit 120 via the signal line 120 A to the source electrode of the write transistor Tr 2 .
- Each scan line 130 A is connected to the scan line drive circuit 130 , and a scan signal is sequentially supplied from the scan line drive circuit 130 to the gate electrode of the write transistor Tr 2 via the scan line 130 A.
- FIG. 15 illustrates the appearance of a television apparatus to which the organic EL displays 1 and 2 of the foregoing embodiment are applied.
- the television apparatus has, for example, a video image display screen 300 including a front panel 310 and a filter glass 320 .
- FIGS. 16A and 16B illustrate the appearance of a digital still camera to which the organic EL displays 1 and 2 of the embodiment are applied.
- the digital still camera has, for example, a light emission unit 410 for flash, a display unit 420 , a menu switch 430 , and a shutter button 440 .
- FIG. 17 illustrates the appearance of a notebook-sized personal computer to which the organic EL displays 1 and 2 of the embodiment are applied.
- the notebook-sized personal computer has, for example, a body 510 , a keyboard 520 for operation of entering characters and the like, and a display unit 530 for displaying an image.
- FIG. 18 illustrates the appearance of a video camera to which the organic EL displays 1 and 2 of the embodiment are applied.
- the video camera has, for example, a body 610 , a lens 620 for shooting a subject, provided on the front side face of the body 610 , a shooting start-stop switch 630 , and a display unit 640 .
- FIGS. 19A to 19G illustrate the appearance of a cellular phone to which the organic EL displays 1 and 2 of the embodiment are applied.
- the cellular phone is obtained by coupling an upper-side casing 710 and a lower-side casing 720 via a coupling unit (hinge) 730 and has a display 740 , a sub-display 750 , a picture light 760 , and a camera 770 .
- the present invention has been described above by the embodiment and the modification.
- the invention is not limited to the embodiment and the like but may be variously modified.
- the configuration in which the reverse bias wiring 17 B is disposed so as to surround the formation region of the auxiliary wiring has been described.
- the plane configuration of the reverse bias wiring 17 B is not limited to the above.
- the reverse bias wiring 17 B may be provided so as to face at least one of four sides of the rectangular auxiliary wiring in the substrate plane. That is, the reverse bias wiring 17 B may be formed apart from the auxiliary wiring in at least a part of the periphery of the auxiliary wiring.
- the first pad 14 A is covered with a part of the planarization layer 12 (covering part 12 A).
- the first pad 14 A may be covered by using an insulating material different from that of the planarization layer 12 .
- the inter-pixel insulating film 15 may be extended to a position where the first pad 14 A is covered.
- the covering part 12 A may be made of an insulating material different from both of that of the planarization layer 12 and that of the inter-pixel insulating film 15 .
- the reverse bias electrode 17 is provided between the organic layer 16 and the second electrode and is connected to the reverse bias wiring 17 B has been described as an example.
- the reverse bias electrode 17 may not be disposed. That is, a configuration in which the auxiliary wiring and the reverse bias wiring 17 B are electrically insulated from each other and reverse bias voltage is applied to the organic layer 16 is sufficient.
- the invention is not limited to the materials and thicknesses of the layers, the film forming methods, film forming conditions, and the like described in the embodiment and the like, but other materials and thicknesses, other film forming methods, and other film forming conditions may be used.
- the configuration of the light emission layer for emitting white light is not limited to the case.
- the light emission layer for emitting white light may have a structure of stacking light emission layers of two colors having a complementary relation, such as an orange light emission layer and a blue light emission layer, or a blue-green light emission layer and a red light emission layer.
- the configuration in which the layers of three colors are stacked in the thickness direction has been described as an example. It is also possible to paint color light emission layers pixel by pixel in correspondence with the pixels of R, G, and B.
- the first electrode 13 is an anode and the second electrodes 18 and 25 are cathodes has been described.
- the first electrode 13 may be set as a cathode
- the second electrode 18 may be set as an anode.
- the material of the second electrode 18 a single material or an alloy of gold, silver, platinum, copper, or the like is preferable.
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Abstract
Description
- 1. Field of the Invention
- The present invention relates to an organic EL display provided with an auxiliary wiring and a method of manufacturing the same.
- 2. Description of the Related Art
- In recent years, attention is being paid to an organic EL element using an electro luminescence (EL) phenomenon of an organic material as a light emitting element capable of emitting high-luminance light by low-voltage DC driving. As a method of driving a display device (organic EL display) using the organic EL element, a simple matrix method and an active matrix method are mentioned. In the case where the number of pixels is large, the active matrix method is suitable.
- In an organic EL display of the active matrix method, a thin film transistor for driving each pixel (organic EL element), a first electrode connected to the thin film transistor, an organic layer including a light emission layer, and a second electrode are provided in this order on a substrate. In such an organic EL display, to assure the aperture ratio of each pixel, it is preferable to extract light from the side opposite to the substrate, that is, to employ the surface emission structure (called “surface emission type” below). In the organic EL display of the surface emission type, the second electrode is made of a transparent or semi-transparent electrode material.
- However, such a transparent electrode material has generally a high electric resistance value and the second electrode is formed as an electrode common to the pixels. Consequently, in an organic EL display of the surface emission type, a voltage drop easily occurs in the second electrode. It causes significant deterioration in display performance. To suppress occurrence of such a voltage drop, a method of providing an auxiliary wiring in a region between pixels is used. Concretely, an auxiliary wiring electrically insulated from the first electrode is disposed on the first electrode side on the substrate and is electrically connected to the second electrode.
- In many cases, an organic layer is formed on an entire surface of the substrate. Since the organic layer is formed also on the auxiliary wiring, there is the possibility that contact between the auxiliary wiring and the second electrode deteriorates due to the organic layer. Even in the case of forming an organic layer on a pixel unit basis with a mask, if mask positioning precision or precision of processing the opening in the mask is low, the organic layer is formed on the auxiliary wiring, and it results in deterioration in contact with the second electrode.
- Therefore, methods of selectively removing the organic layer on the auxiliary wiring by irradiating a region on the auxiliary wiring in the organic layer with a laser beam were proposed as described in, for example, Japanese Unexamined Patent Application Publication Nos. 2005-11810 and 2006-286493.
- However, in Japanese Unexamined Patent Application Publication Nos. 2005-11810 and 2006-286493, laser beam irradiating equipment is necessary. The irradiation position and the like have to be strictly aligned, so that it causes increase in tact time and complication in processes.
- It is therefore desirable to provide an organic EL display and a method of manufacturing the same capable of assuring excellent electric connection between an auxiliary wiring and a second electrode by a simple process without using large-scale equipment.
- According to an embodiment of the present invention, there is provided an organic EL display including: a plurality of pixels each having, in order from a substrate side, a first electrode, an organic layer including a light emission layer, and a second electrode; an auxiliary wiring disposed in a periphery region of each of the plurality of pixels and conducted to the second electrode; and another auxiliary wiring disposed apart from the auxiliary wiring at least in a part of outer periphery of a formation region of the auxiliary wiring in a substrate surface.
- According to an embodiment of the present invention, there is provided a method of manufacturing an organic EL display including the steps of: forming a first electrode for each of pixels on a substrate; forming an auxiliary wiring in a peripheral region of each of the pixels on the substrate; forming another auxiliary wiring so as to be electrically insulated from the auxiliary wiring; forming an organic layer including a light emission layer over the first electrode and the auxiliary wiring; forming a connection hole in a region corresponding to the auxiliary wiring in the organic layer by applying a reverse bias voltage to the organic layer via the auxiliary wiring and the another auxiliary wiring; and forming a second electrode so as to bury the connection hole on the organic layer.
- In the method of manufacturing an organic EL display of an embodiment of the invention, by applying a reverse bias voltage to the organic layer through an auxiliary wiring and another auxiliary wiring formed so as to be electrically insulated, only the region on the auxiliary wiring in the organic layer is selectively removed. By burying the removed region as a connection hole with the second electrode, excellent electric connection between the auxiliary wiring and the second electrode is assured.
- According to the method of manufacturing an organic EL display of an embodiment of the invention, another auxiliary wiring is formed so as to be electrically insulated from an auxiliary wiring. After that, a reverse bias voltage is applied to an organic layer via the auxiliary wiring and the another auxiliary wiring. Consequently, without using a laser beam irradiating apparatus and without performing precision alignment, the organic layer formed on the auxiliary wiring is removable. Therefore, without using large-scale equipment, by a simple process, excellent electric connection between the auxiliary wiring and the second electrode may be assured. As a result, in the organic EL display of an embodiment of the invention, occurrence of voltage drop in the second electrode is suppressed effectively, so that excellent display quality is maintained more easily.
- Other and further objects, features and advantages of the invention will appear more fully from the following description.
-
FIG. 1 is a cross section illustrating a schematic configuration of an organic EL display according to an embodiment of the present invention. -
FIG. 2 is a diagram illustrating a plane configuration of an auxiliary wiring, a reverse bias wiring, and the like illustrated inFIG. 1 . -
FIGS. 3A and 3B are cross sections illustrating a method of manufacturing the organic EL display illustrated inFIG. 1 in process order. -
FIGS. 4A and 4B are cross sections illustrating a process subsequent toFIGS. 3A and 3B . -
FIGS. 5A and 5B are cross sections illustrating a process subsequent toFIGS. 4A and 4B . -
FIG. 6 is a cross section illustrating a process subsequent toFIGS. 5A and 5B . -
FIG. 7 is a cross section illustrating a process subsequent toFIG. 6 . -
FIG. 8 is a cross section illustrating a process subsequent toFIG. 7 . -
FIG. 9 is a characteristic diagram illustrating current value changes according to an embodiment of the present invention. -
FIG. 10 is a cross section illustrating a schematic configuration of an organic EL display according to a modification of the invention. -
FIG. 11 is a diagram illustrating a plane configuration of an auxiliary wiring, a reverse bias wiring, and the like illustrated inFIG. 10 . -
FIG. 12 is a plan view illustrating a schematic configuration of modules including the organic EL display of the embodiment. -
FIG. 13 is a plan view illustrating the configuration of drive circuits of the organic EL display in the modules illustrated inFIG. 12 . -
FIG. 14 is an equivalent circuit diagram illustrating an example of a pixel drive circuit illustrated inFIG. 13 . -
FIG. 15 is a perspective view illustrating the appearance of application example 1 of the display device of the embodiment. -
FIGS. 16A and 16B are perspective views illustrating the appearance of application example 2 of the display device of the embodiment. -
FIG. 17 is a perspective view illustrating the appearance of application example 3 of the display device of the embodiment. -
FIG. 18 is a perspective view illustrating the appearance of application example 4 of the display device of the embodiment. -
FIGS. 19A to 19G are perspective views illustrating the appearance of application example 5 of the display device of the embodiment. - Embodiments of the present invention will be described in detail hereinbelow with reference to the drawings.
-
FIG. 1 illustrates a sectional structure of anorganic EL display 1 according to an embodiment of the present invention. Theorganic EL display 1 is suitably used as a thin organic EL display and is a display device of an active matrix type for individually driving a plurality of pixels arranged in a matrix. In theorganic EL display 1, on a drive-side substrate 10 made of glass or the like, anorganic EL element 10R as an R (red) pixel, anorganic EL element 10G as a G (green) pixel, and anorganic EL element 10B as a B (blue) pixel are provided in order in a matrix. Over the drive-side substrate 10, a pixel drive circuit (the details will be described later) including TFTs (Thin Film Transistors) 11 for driving theorganic EL elements planarization layer 12 are formed. Over theplanarization layer 12, theorganic EL elements organic EL elements side substrate 10 are sealed by a sealing-side substrate 20 with aprotection film 30 and anadhesive layer 31 in between. - The
TFTs 11 are drive elements for driving theorganic EL elements TFT 11 is connected to a scan drive circuit, and the source and drain (which are not illustrated) are connected to awiring layer 11B provided with aninterlayer insulating film 11A made of, for example, oxide silicon or PSG (Phospho-Silicate Glass) in between. Thewiring layer 11B is constructed by, for example, a single-layer film made of aluminum (Al) only or an aluminum alloy, a stack film of titanium (Ti) and aluminum, or a three-layer film of titanium, aluminum, and titanium. Over theTFT 11, theinterlayer insulating film 11A, and thewiring layer 11B, theplanarization layer 12 is formed. - The
planarization layer 12 is provided to planarize the surface of the drive-side substrate 10 on which theTFTs 11 are formed and to make the thickness of each of the layers in theorganic EL elements planarization layer 12 is made of an insulating material and, as will be specifically described later, also plays the role of bringing electric insulation between anauxiliary wiring 14 and areverse bias wiring 17B. As the insulating material, for example, an organic material such as polyimide resin, acrylic resin, or novolac resin, or an inorganic material such as silicon oxide (SiO2) may be used. In such aplanarization layer 12, acontact hole 12 a is provided for each pixel. Afirst electrode 13 which will be described later is buried in thecontact hole 12 a, thereby assuring electric connection to thewiring layer 11B. In the embodiment, over theplanarization layer 12, theauxiliary wiring 14 and thereverse bias wiring 17B which will be described later are disposed. - In the
organic EL elements planarization layer 12, thefirst electrode 13 as an anode and theauxiliary wiring 14 are disposed. Over them, an inter-pixelinsulating film 15, anorganic layer 16 including a light emission layer, areverse bias electrode 17, and asecond electrode 18 as a cathode are stacked in this order. Theorganic layer 16, thereverse bias electrode 17, and thesecond electrode 18 are provided as layers common to the pixels, for all of the pixels. - The
first electrode 13 is disposed for each pixel on theplanarization layer 12 and functions as an electrode for injecting holes to theorganic layer 16. In the case of a surface emitting type as described above, thefirst electrode 13 is used also as a reflection layer, so it is desirable to have reflectance as high as possible from the viewpoint of increasing luminance efficiency. For example, as the material of thefirst electrode 13, a metal element itself such as silver (Ag), aluminum, molybdenum (Mo), or chromium (Cr) or its alloy is used and thickness is, for example, 100 nm to 500 nm both inclusive. Thefirst electrode 13 may have a single-layer structure or a multilayer structure. - The
auxiliary wiring 14 is provided to suppress voltage drop in thesecond electrode 18, electrically insulated from thefirst electrode 13 and conducted to thesecond electrode 18. For example, theauxiliary wiring 14 is disposed in the periphery region of thefirst electrode 13 on theplanarization layer 12. On the other hand, in theinter-pixel insulating film 15, theorganic layer 16, and thereverse bias electrode 17 provided over theauxiliary wiring 14, contact holes 16A are provided so as to penetrate to theauxiliary wiring 14. Via the contact holes 16A, theauxiliary wiring 14 and thesecond electrode 18 are made conductive. Although the details will be described later, theauxiliary wiring 14 is disposed in a region between the pixels and is also disposed in all of pixel regions arranged in a matrix, that is, in the outer peripheral region surrounding the display region. Thereverse bias wiring 17B (not illustrated inFIG. 1 , the details will be described later) is disposed in an outer peripheral region of the formation region of theauxiliary wiring 14. Thereverse bias wiring 17B is connected to thereverse bias electrode 17 in the outer periphery region. - The
auxiliary wiring 14 may be made of a conductive material different from that of thefirst electrode 13 but, preferably, made of the same material as that of thefirst electrode 13. When theauxiliary wiring 14 and thefirst electrode 13 are made of the same material, theauxiliary wiring 14 and thefirst electrode 13 are allowed to be patterned in the same process in a manufacturing process which will be described later, so that the man-hour is reduced. The detailed configuration of theauxiliary wiring 14 will be described later. - The inter-pixel
insulating film 15 is provided to bring electric insulation between the first andsecond electrodes first electrode 13 and theauxiliary wiring 14. The inter-pixelinsulating film 15 is made of, for example, an insulating material such as silicon oxide or polyimide. In theinter-pixel insulating film 15, anopening 15A corresponding to thefirst electrode 13 and anopening 15B corresponding to theauxiliary wiring 14 are provided. In theopening 15A, theorganic layer 16, thereverse bias electrode 17, and thesecond electrode 18 are stacked in this order. In theopening 15B, thesecond electrode 18 is buried. That is, the region corresponding to theopening 15A is a light emitting region in each of theorganic EL elements opening 15B functions as a part of thecontact hole 16A. - The
organic layer 16 is formed so as to cover the side faces and the top face of theinter-pixel insulating film 15 and the top face of thefirst electrode 13 exposed by theopening 15A. Theorganic layer 16 is interrupted around just above theopening 15B in theinter-pixel insulating film 15 and serves as a part of thecontact hole 16A. A concrete configuration of theorganic layer 16 will be described below. - The
organic layer 16 has the same stack-layer structure regardless of the light emission colors of theorganic EL elements first electrode 13, a hole injection layer, a hole transport layer, a red light emission layer, a green light emission layer, a blue light emission layer, and an electron transport layer are stacked. The hole injection layer is provided to increase the hole injection efficiency and is made of, for example, 4,4′,4″-tris(3-methylphenylamino) triphenylamine (m-MTDATA) or 4,4′,4″-tris(2-naphthylfenylamino) triphenylamine (2-TNATA). The hole transport layer is provided to increase the hole injection efficiency and is made of, for example, 4,4′-bis(N-1-naphthyl-N-fenylamino) biphenyl (α-NPD). - When an electric field is applied, each of the red light emission layer, the green light emission layer, and the blue light emission layer emits light of red, green, and blue, respectively, by recombining a part of holes injected from the
first electrode 13 side and a part of electrons injected from thesecond electrode 18 side. Each of the color light layers includes an organic material such as styryl amine derivative, aromatic amine derivative, perylene derivative, coumarin derivative, pyran-series dye, triphenyl amine derivative, or the like. Since the light emission layers of three colors are stacked in the thickness direction, white color as a whole is emitted upward of thesecond electrode 18. - The electronic transport layer is provided to increase the efficiency of injecting electrons to the color light emission layers and is made of, for example, 8-hydroxyquinoline aluminum (Alq3). On the electron transport layer, the
reverse bias electrode 17 is disposed. Between the electron transport layer in theorganic layer 16 and thereverse bias electrode 17, an electron injection layer for increasing the electron injection efficiency may be further provided. Examples of the material of the electron injection layer include alkali metal oxides such as Li2O, Cs2O, LiF, and CaF2, alkali metal fluoride, alkaline-earth metal oxide, and alkaline-earth fluoride. - The
reverse bias electrode 17 is, like theorganic layer 16, interrupted around just above theopening 15B in theinter-pixel insulating film 15 and serves as a part of thecontact hole 16A. Although the details will be described later, thereverse bias electrode 17 is provided to assure electric connection between theauxiliary wiring 14 and thesecond electrode 18 by forming thecontact hole 16A above theauxiliary wiring 14 in the manufacturing process. Examples of the material of thereverse bias electrode 17 include transparent or semi-transparent electrode materials such as indium tin oxide (ITO), zinc oxide (ZnO), magnesium silver alloy (MgAg), and indium zinc oxide (IZO). It is preferable to select the same material as that of thesecond electrode 18 as the material of thereverse bias electrode 17 from the viewpoints of simplification of the manufacturing process of thereverse bias electrode 17 and thesecond electrode 18 and the connection resistance. The thickness of thereverse bias electrode 17 is, for example, 3 nm to 20 nm. The detailed configuration of thereverse bias electrode 17 will be described later. - The
second electrode 18 functions as an electrode for injecting electrons to theorganic layer 16. In the case of surface emission type, the material of thesecond electrode 18 is, for example, a material having conductivity and light transmittance, for example, a transparent or semi-transparent electrode material such as indium tin oxide, zinc oxide, magnesium silver alloy, or indium zinc oxide. - The
protection film 30 is made of a transparent dielectric material such as silicon oxide (SiO2) or silicon nitride (SiN). Theadhesive layer 31 is made of, for example, a thermoset resin, an ultraviolet curable resin, or the like. - A sealing-
side substrate 20 is provided to seal theorganic EL elements adhesive layer 31. The sealing-side substrate 20 is made of a material such as glass which is transparent to light generated by theorganic EL elements side substrate 20 is provided with color filters (not illustrated) of red, green, and blue in correspondence with the disposition of theorganic EL elements organic EL elements side substrate 10. Between the color filters, a black matrix may be provided. - Referring now to
FIG. 2 , the detailed configuration of theauxiliary wiring 14, thereverse bias electrode 17, and thereverse bias wiring 17B will be described.FIG. 2 schematically illustrates a plane configuration of theauxiliary wiring 14 and thereverse bias wiring 17B over theplanarization layer 12 and the formation regions of thereverse bias electrode 17 and thesecond electrode 18. A cross section taken along line I-I ofFIG. 2 corresponds toFIG. 1 . - The
auxiliary wiring 14 is disposed in aninter-pixel region 141 between theorganic EL elements peripheral region 142 surrounding all of the pixels P arranged in a matrix (hereinbelow, called a display region). That is, the plane shape of theauxiliary wiring 14 is a shape obtained by partitioning the inside of the rectangular frame in a lattice shape in the substrate face. Thereverse bias wiring 17B is disposed so as to further surround theperipheral region 142 of theauxiliary wiring 14 from the outside and so as to be apart from theauxiliary wiring 14. - The
reverse bias wiring 17B may be made of a material different from that of thefirst electrode 13 and theauxiliary wiring 14 but, preferably, made of the same material as that of thefirst electrode 13 and theauxiliary wiring 14. When thereverse bias wiring 17B is made of the same material as that of thefirst electrode 13 and theauxiliary wiring 14, thefirst electrode 13, theauxiliary wiring 14, and thereverse bias wiring 17B are allowed to be patterned in the same process in a manufacturing process which will be described later. - Over the
auxiliary wiring 14, as described above, the organic layer 16 (not illustrated inFIG. 2 ) is formed in the entire display region. Over theplanarization layer 12, theorganic layer 16 is provided on the outside of theperipheral region 142 of theauxiliary wiring 14 and on the inside of the formation region of thereverse bias wiring 17B. That is, theauxiliary wiring 14 is covered with theorganic layer 16 and, on the other hand, thereverse bias wiring 17B is exposed from theorganic layer 16. - The
reverse bias electrode 17 is disposed on the entire face of the planarization layer 12 (for example, the region surrounded by an alternate long and short dash line inFIG. 2 ) so as to cover theorganic layer 16 and the formation region of thereverse bias wiring 17B exposed from theorganic layer 16. Over thereverse bias electrode 17, thesecond electrode 18 is provided from the display region to the region on the outside of theperipheral region 142 of theauxiliary wiring 14 and the inside of the formation region of thereverse bias wiring 17B (for example, the region surrounded by an alternate long and two short dashes line inFIG. 2 ). - To the
auxiliary wiring 14 and thereverse bias wiring 17B, voltage application pads (first andsecond pads second pads organic layer 16 via theauxiliary wiring 14 and thereverse bias wiring 17B (reverse bias electrode 17), respectively, in the manufacturing process which will be described later. - The
first pad 14A is attached to a part of theperipheral region 142 of theauxiliary wiring 14. Thefirst pad 14A is formed, for example, together with thewiring layer 11B over theinterlayer insulating film 11A and is in contract with theauxiliary wiring 14 via an opening part (not illustrated) formed in theplanarization layer 12. On the other hand, a part facing thereverse bias electrode 17 and thereverse bias wiring 17B, of thefirst pad 14A is covered with, for example, a part (coveringpart 12A) of theplanarization layer 12. In such a manner, theauxiliary wiring 14 and thefirst pad 14A are disposed so as not to be in direct contact with both of thereverse bias electrode 17 and thereverse bias wiring 17B. - The
second pad 17A is attached to a part of thereverse bias wiring 17B. Thesecond pad 17A has an exposedpart 17C which is exposed from theplanarization layer 12. In such a manner, thereverse bias wiring 17B and thesecond pad 17A are at least partially in direct contact with thereverse bias electrode 17. - In the embodiment, the
auxiliary wiring 14 corresponds to an example of the “auxiliary wiring” of the present invention, thereverse bias wiring 17B corresponds to an example of the “another auxiliary wiring”, and thereverse bias electrode 17 corresponds to an example of the “third electrode”. - The
organic EL display 1 may be manufactured, for example, as follows. -
FIGS. 3A and 3B toFIG. 8 illustrate a method of manufacturing theorganic EL display 1 in process order. First, as illustrated inFIG. 3A , theTFTs 11 and theinterlayer insulating film 11A are formed on the drive-side substrate 10 by a known thin film process. After that, on theinterlayer insulating film 11A, thewiring layer 11B made of the above-described material is formed. A single-layer film or a multilayer film is formed using the above-described material by, for example, sputtering or the like and, after that, thewiring layer 11B is patterned by using, for example, the lithography method. Simultaneously, thefirst pads 14 are formed over theinterlayer insulating film 11A. - After that, as illustrated in
FIG. 3B , theplanarization layer 12 made of the above-described material is formed by, for example, spin coating on the entire surface of the drive-side substrate 10. After that, for example, by using the photolithography method, the opening 12 a is formed in a region corresponding to thewiring layer 11B. Simultaneously, an opening (not illustrated) for making thefirst pad 14A and theauxiliary wiring 14 contact with each other is formed. - Subsequently, as illustrated in
FIG. 4A , a metal layer 13-1 is formed on the entire surface of theplanarization layer 12 by, for example, sputtering. The metal layer 13-1 is made of the material constructing thefirst electrode 13, theauxiliary wiring 14, and thereverse bias wiring 17B (not illustrated inFIGS. 4A and 4B ). As illustrated inFIG. 4B , for example, by using the lithography method, thefirst electrode 13 is patterned in each pixel region, and theauxiliary wiring 14 is patterned in the peripheral region of thefirst electrode 13. Further, as illustrated inFIG. 2 , thereverse bias wiring 17B is simultaneously patterned in the peripheral region of theauxiliary wiring 14 so as to be apart from theauxiliary wiring 14. After that, thesecond pad 17A is attached to thereverse bias wiring 17B. As a result, theauxiliary wiring 14 and thefirst pad 14A are electrically connected, and thereverse bias wiring 17B and thesecond pad 17A are electrically connected. - Subsequently, as illustrated in
FIG. 5A , on thefirst electrode 13 and theauxiliary wiring 14 formed, theinter-pixel insulating film 15 made of the above-described material is formed by, for example, CVD (Chemical Vapor Deposition), and the parts corresponding to thefirst electrode 13 and theauxiliary wiring 14 are selectively removed by using, for example, the lithography method to thereby form theopenings - As illustrated in
FIG. 5B , theorganic layer 16 made of the above-described material is formed on theinter-pixel insulating film 15 so as to cover the display region by, for example, the vacuum deposition method. Theorganic layer 16 is formed in theopening 15A in theinter-layer insulating film 15 and buried in theopening 15B. Theorganic layer 16 is formed in the region on the inside of the formation region of thereverse bias wiring 17B, and thereverse bias wiring 17B is exposed from theorganic layer 16. - As illustrated in
FIG. 6 , thereverse bias electrode 17 made of the above-described material is formed so as to cover the entire surface of theplanarization layer 12, that is, theorganic layer 16 and thereverse bias wiring 17B on theplanarization layer 12 by using, for example, sputtering or the like. - As described above, by forming the
reverse bias wiring 17B in the periphery of theauxiliary wiring 14 so as to be apart from theauxiliary wiring 14 over theplanarization layer 12, theauxiliary wiring 14 and thereverse bias wiring 17B are electrically insulated from each other. By forming thefirst pad 14A so as to be covered with theplanarization layer 12, thefirst pad 14A is electrically insulated from both of thereverse bias electrode 17 and thereverse bias wiring 17B. Further, by theorganic layer 16 formed so as to cover the entire pixel region, theauxiliary wiring 14 and thereverse bias electrode 17 are electrically insulated from each other. - On the other hand, the
reverse bias wiring 17B is formed so as to be exposed from theorganic layer 16, and thereverse bias electrode 17 is formed on the entire surface of theplanarization layer 12, thereby electrically connecting thereverse bias wiring 17B and thereverse bias electrode 17. By exposing thesecond pad 17A from theplanarization layer 12 and attaching it to thereverse bias wiring 17B, a part of thesecond pad 17A is electrically connected to thereverse bias electrode 17. - Via the
auxiliary wiring 14 and thereverse bias wiring 17B (reverse bias electrode 17) formed as described above, reverse bias voltage is applied to theorganic layer 16. Since theauxiliary wiring 14 and thefirst pad 14A are electrically insulated from both of thereverse bias electrode 17 and thereverse bias wiring 17B, independent potentials are applied across theauxiliary wiring 14 and thereverse bias wiring 17B. Concretely, the drive-side substrate 10 over which thereverse bias electrode 17 is formed is disposed, for example, in oxygen concentration of about 0.1 to 20% and in dew-point temperature atmosphere of −60° or less, a probe comes into contact with each of the first andsecond pads organic layer 16. The reverse bias voltage is a voltage of the degree at which theorganic layer 16 is blown, for example, 50V or higher. - As illustrated in
FIG. 7 , only the region above theauxiliary wiring 14, in theorganic layer 16 formed over all of the pixels is selectively removed. Simultaneously, only the region corresponding to theauxiliary wiring 14, in thereverse bias electrode 17 formed on theorganic layer 16 is selectively removed. In such a manner, thecontact hole 16A for assuring electric connection to thesecond electrode 18 is formed in the region above theauxiliary wiring 14. - As illustrated in
FIG. 8 , on thereverse bias electrode 17, thesecond electrode 18 made of the above-described material is formed in all of the display region by, for example, sputtering. At this time, thesecond electrode 18 is formed so as to be buried in thecontact hole 16A formed in theorganic layer 16. As a result, in thecontact hole 16A, theauxiliary wiring 14 and thesecond electrode 18 are electrically connected to each other. After that, on thesecond electrode 18, theprotection film 30 made of the above-described material is formed. - Finally, the
adhesive layer 31 made of, for example, a thermoset resin is applied on theprotection film 30 and, after that, the sealing-side substrate 20 is adhered onto theadhesive layer 31. The color filters on the sealing-side substrate 20 and theorganic EL elements adhesive layer 31. As a result, theorganic EL display 1 illustrated inFIG. 1 is completed. - In the method of manufacturing the organic EL display of the embodiment, the
auxiliary wiring 14 is patterned together with thefirst electrode 13 on the side of the drive-side substrate 10 and, after that, theorganic layer 16 is formed in the entire display region. Since theauxiliary wiring 14 is disposed so as to suppress voltage drop of thesecond electrode 18, the electric connection to thesecond electrode 18 formed in a process of a post stage has to be assured. However, in the case of forming theorganic layer 16 in all of the display region as described above, the surface of theauxiliary wiring 14 is also covered with theorganic layer 16, and it becomes uneasy to assure the electric connection between theauxiliary wiring 14 and thesecond electrode 18. Conventionally, a method of irradiating the region corresponding to the auxiliary wiring with a laser beam after formation of the organic layer, thereby removing the organic layer above the auxiliary wiring is employed. However, in such a method, large-scale equipment such as a laser beam irradiating apparatus is necessary and a laser beam has to be accurately emitted only to a region corresponding to the auxiliary wiring, so that precise positioning is necessary. - In contrast, in the embodiment, the
reverse bias electrode 17 and thereverse bias wiring 17B are formed so as to be electrically insulated from theauxiliary wiring 14 with theorganic layer 16 in between, and the reverse bias voltage is applied to theorganic layer 16 via theauxiliary wiring 14 and thereverse bias wiring 17B. As a result, only the region above theauxiliary wiring 14, in theorganic layer 16 is selectively blown and removed. Therefore, without using equipment such as a laser irradiating apparatus and without a precise positioning process, theauxiliary wiring 14 is exposed from theorganic layer 16.FIG. 9 illustrates, as an example, changes in a current value with respect to application time (hour:minute:second) in the case where reverse bias voltage of 50V is continuously applied across theauxiliary wiring 14 and thereverse bias wiring 17B under environments of oxygen concentration of 20% and dew temperature of −60° or less. As described above, under the conditions, the current value starts dropping at the time point after about 15 minutes since voltage application. Finally, it was observed that theorganic layer 16 over theauxiliary wiring 14 was sufficiently blown after about one hour. - As described above, in the embodiment, without using large-scale equipment, excellent electric connection between the
auxiliary wiring 14 and thesecond electrode 18 is allowed to be assured with the simple process. In theorganic EL display 1 of the embodiment, when a predetermined voltage is applied across the first andsecond electrodes organic layer 16 and holes and electrons are recombined. As a result, the light becomes white color as a whole and goes out from thesecond electrode 18 side. The white color light passes through the color filters formed on the sealing-side substrate 20, and is extracted as light of three primary colors. Since the excellent electric connection between theauxiliary wiring 14 and thesecond electrode 18 is assured, occurrence of voltage drop of thesecond electrode 18 is suppressed, so that excellent display quality is maintained more easily. - Since the
auxiliary wiring 14 and thereverse bias wiring 17B are formed in the same layer, for example, on theplanarization layer 12, theauxiliary wiring 14 and thereverse bias wiring 17B may be formed by the same thin film process. Thus, the manufacturing process becomes more facilitated. - A modification of the present invention will be described below with reference to the drawings. The same reference numerals are designated to components similar to those of the foregoing embodiment and their description will not be repeated.
-
FIG. 10 illustrates a sectional structure of anorganic EL display 2 according to a modification. Like theorganic EL display 1, theorganic EL display 2 is a display device of an active matrix type for individually driving a plurality of pixels arranged in a matrix. Also in theorganic EL display 2, on the drive-side substrate 10, theorganic EL elements side substrate 10, a pixel drive circuit (the details will be described later) including theTFTs 11 and aplanarization layer 22 are formed. Over theplanarization layer 22, theorganic EL elements - In the modification, an
auxiliary wiring 24 is provided together with awiring 21 on theinterlayer insulating film 11A, and thereverse bias wiring 17B is disposed over theplanarization layer 22. That is, theauxiliary wiring 24 and thereverse bias wiring 17B are provided in different layers. Contact holes 26A penetrating thereverse bias electrode 17, theorganic layer 16, theinter-pixel insulating film 15, and theplanarization layer 22 are provided. Asecond electrode 25 is buried in thecontact hole 26A and is electrically connected to theauxiliary wiring 24. Theauxiliary wiring 21 is provided to connect theTFT 11 and thefirst electrode 13 and is made of a material similar to that of thewiring layer 11B in the foregoing embodiment. - Like the
planarization layer 12 of the foregoing embodiment, theplanarization layer 22 planarizes the surface of the drive-side substrate 10 on which theTFT 11 is formed and makes the thicknesses of the layers of theorganic EL elements planarization layer 22 is made of an insulating material similar to that of theplanarization layer 12. Theplanarization layer 22 has acontact hole 22 a above thewiring 21, and acontact hole 22 b above theauxiliary wiring 24. In thecontact hole 22 a, thefirst electrode 13 is buried. In thecontact hole 22 b, thesecond electrode 25 is buried. Thecontact hole 22 b is a part of thecontact hole 26A. - The
auxiliary wiring 24 is provided to suppress voltage drop in thesecond electrode 25, is electrically insulated from thefirst electrode 13 and, on the other hand, provided so as to be conducted with thesecond electrode 25. On theplanarization layer 22, in a region outside of the formation region of theauxiliary wiring 24, in a manner similar to the foregoing embodiment, thereverse bias wiring 17B (not illustrated inFIG. 10 ) is disposed apart from theauxiliary wiring 24 and is connected to thereverse bias electrode 17. Referring now toFIG. 11 , the detailed configuration of theauxiliary wiring 24, thereverse bias electrode 17, and thereverse bias wiring 17B will be described.FIG. 11 schematically illustrates the plane configuration of theauxiliary wiring 24 and thereverse bias wiring 17B and the formation region of thereverse bias electrode 17 and thesecond electrode 25. - The
auxiliary wiring 24 is disposed in aninter-pixel region 241 between the pixels P below theplanarization layer 22 and in aperipheral region 242 surrounding a display region formed by all of the pixels P. That is, like theauxiliary wiring 14 of the foregoing embodiment, the plane shape of theauxiliary wiring 24 is a shape obtained by partitioning the inside of the rectangular frame in a lattice shape in the substrate face. Above theplanarization layer 22, thereverse bias wiring 17B is disposed so as to surround theperipheral region 242 of theauxiliary wiring 24 from the outside and so as to be apart from theauxiliary wiring 24. - The
reverse bias wiring 17B may be made of a material similar to that of thefirst electrode 13 and, preferably, made of the same material as that of thefirst electrode 13, so that thefirst electrode 13 and thereverse bias wiring 17B are allowed to be patterned in the same process in a manufacturing process. - Over the
planarization layer 22, the organic layer 16 (not illustrated inFIG. 11 ) is formed in the entire display region. Over theplanarization layer 22, theorganic layer 16 is provided on the outside of theperipheral region 242 of theauxiliary wiring 24 and on the inside of the formation region of thereverse bias wiring 17B. That is, theauxiliary wiring 24 is covered with theorganic layer 16 and, on the other hand, thereverse bias wiring 17B is exposed from theorganic layer 16. - In a manner similar to the foregoing embodiment, the
reverse bias electrode 17 is disposed on the entire face of the planarization layer 22 (for example, the region surrounded by an alternate long and short dash line inFIG. 11 ). Over thereverse bias electrode 17, thesecond electrode 25 is provided from the display region to the region on the outside of theperipheral region 242 of theauxiliary wiring 24 and the inside of the formation region of thereverse bias wiring 17B (for example, the region surrounded by an alternate long and two short dashes line inFIG. 11 ). - To the
auxiliary wiring 24 and thereverse bias wiring 17B, voltage application pads (first andsecond pads second pads organic layer 16 via theauxiliary wiring 24 and thereverse bias wiring 17B (reverse bias electrode 17), respectively, in the manufacturing process. - In the modification, the
auxiliary wiring 24 and thereverse bias wiring 17B are provided in different layers, that is, partitioned by theplanarization layer 22, so that theauxiliary wiring 24 and thefirst pad 24A are disposed so as not to be in direct contact with both of thereverse bias electrode 17 and thereverse bias wiring 17B. On the other hand, over theplanarization layer 22, thereverse bias wiring 17B and thesecond pad 17A disposed so as to be exposed from theorganic layer 16 are in direct contact with thereverse bias electrode 17 at least in a part. - The
organic EL display 2 having the configuration as described above may be manufactured, for example, in a manner similar to theorganic EL display 1 of the foregoing embodiment. TheTFTs 11 are formed by patterning on the drive-side substrate 10 by, for example, sputtering and lithography. Subsequently, theplanarization layer 22 is formed by using the above-described insulating material and, after that, the contact holes 22 a and 22 b are formed in a region above thewiring 21 and a region over theauxiliary wiring 24. Over theplanarization 22, thefirst electrode 13 is formed by patterning so as to bury thecontact hole 22 a, and theinter-pixel insulating film 15 having an opening is formed in each of the regions corresponding to thefirst electrode 13 and theauxiliary wiring 24. On theinter-pixel insulating film 15, theorganic layer 16 and thereverse bias electrode 17 are formed in order. - The
auxiliary wiring 24 and thefirst pad 24A, and thereverse bias electrode 17 and thereverse bias wiring 17B are electrically insulated from each other with theorganic layer 16 therebetween by the interposition of theplanarization layer 22, so that potentials are applied independently from each other. Therefore, as described above, by contacting the first andsecond pads organic layer 16 via theauxiliary wiring 24 and thereverse bias wiring 17B. In such a manner, by removing theorganic layer 16 formed over theauxiliary wiring 24, the contact holes 26A are formed. After that, by burying the contact holes 26A with thesecond electrodes 25 over thereverse bias electrode 17, electric connection between theauxiliary wiring 24 and thesecond electrode 25 is assured. Subsequently, theprotection film 30 is formed over thesecond electrode 25 and, after that, in a manner similar to the foregoing embodiment, theorganic EL display 2 illustrated inFIG. 10 is completed. - As in the modification, the
auxiliary wiring 24 and thereverse bias wiring 17B may be disposed in layers different from each other. That is, as long as theauxiliary wiring 24 and thereverse bias wiring 17B are electrically insulated from each other and independent potentials are applicable, theauxiliary wiring 24 and thereverse bias wiring 17B may be provided in the same layer or different layers. With such a configuration, the reverse bias voltage is applicable across theauxiliary wiring 24 and thereverse bias wiring 17B and, as a result, theorganic layer 16 over theauxiliary wiring 24 is selectively removable. - In the modification, the
auxiliary wiring 24 is provided over theinterlayer insulating film 11A and thereverse bias wiring 17B is provided over theplanarization layer 22, so that they are insulated from each other by theplanarization layer 22. Therefore, unlike the foregoing embodiment, it is unnecessary to lead a part of the planarization layer so as to cover the first pad. - Hereinbelow, modules and application examples of the organic EL displays 1 and 2 explained in the foregoing embodiment will be described. The organic EL displays 1 and 2 is applicable to electronic devices in all of fields for displaying a video signal entered from the outside or generated internally as an image or a video image, such as a television apparatus, a digital still camera, a notebook-sized personal computer, a portable terminal device such as a cellular phone, and a video camera.
- The organic EL displays 1 and 2 are assembled, for example, as a module illustrated in
FIG. 12 , in various electronic devices in application examples 1 to 5 and the like which will be described later. The module has, at one side of the drive-side substrate 10, aregion 210 exposed from the sealing-side substrate 20. To theregion 210, wirings of a signalline drive circuit 120 and a scanline drive circuit 130 which will be described later are extended and external connection terminals (not illustrated) are formed. The external connection terminal may be provided with a flexible printed circuit (FPC) 220 for inputting/outputting signals. - In the drive-
side substrate 10, for example, as illustrated inFIG. 13 , adisplay region 110 and the signalline drive circuit 120 and the scanline drive circuit 130 as drivers for displaying video images are formed. In thedisplay region 110, apixel drive circuit 140 is formed. In thedisplay region 110, theorganic EL elements - The
pixel drive circuit 140 is, as illustrated inFIG. 14 , an active-type drive circuit having a drive transistor Tr1 and a write transistor Tr2 formed in a layer below thefirst electrode 13, a capacitor (retentive capacitor) Cs between the transistors Tr1 and Tr2, and theorganic EL element 10R (or 10G or 10B) connected in series with the drive transistor Tr1 between a first power line (Vcc) and a second power line (GND). The drive transistor Tr1 and the write transistor Tr2 are common thin film transistors (TFTs). The configuration may be, for example, an inversely-staggered structure (so-called bottom-gate type) or a staggered structure (top-gate type) and is not limited. - In the
pixel drive circuit 140, a plurality ofsignal lines 120A are disposed in the column direction, and a plurality ofscan lines 130A are disposed in the row direction. The intersecting point between thesignal line 120A and thescan line 130A corresponds to one (sub pixel) of theorganic EL elements signal line 120A is connected to the signalline drive circuit 120, and an image signal is supplied from the signalline drive circuit 120 via thesignal line 120A to the source electrode of the write transistor Tr2. Eachscan line 130A is connected to the scanline drive circuit 130, and a scan signal is sequentially supplied from the scanline drive circuit 130 to the gate electrode of the write transistor Tr2 via thescan line 130A. -
FIG. 15 illustrates the appearance of a television apparatus to which the organic EL displays 1 and 2 of the foregoing embodiment are applied. The television apparatus has, for example, a video image display screen 300 including afront panel 310 and afilter glass 320. -
FIGS. 16A and 16B illustrate the appearance of a digital still camera to which the organic EL displays 1 and 2 of the embodiment are applied. The digital still camera has, for example, alight emission unit 410 for flash, adisplay unit 420, amenu switch 430, and ashutter button 440. -
FIG. 17 illustrates the appearance of a notebook-sized personal computer to which the organic EL displays 1 and 2 of the embodiment are applied. The notebook-sized personal computer has, for example, abody 510, akeyboard 520 for operation of entering characters and the like, and adisplay unit 530 for displaying an image. -
FIG. 18 illustrates the appearance of a video camera to which the organic EL displays 1 and 2 of the embodiment are applied. The video camera has, for example, abody 610, alens 620 for shooting a subject, provided on the front side face of thebody 610, a shooting start-stop switch 630, and adisplay unit 640. -
FIGS. 19A to 19G illustrate the appearance of a cellular phone to which the organic EL displays 1 and 2 of the embodiment are applied. The cellular phone is obtained by coupling an upper-side casing 710 and a lower-side casing 720 via a coupling unit (hinge) 730 and has adisplay 740, a sub-display 750, a picture light 760, and acamera 770. - The present invention has been described above by the embodiment and the modification. However, the invention is not limited to the embodiment and the like but may be variously modified. For example, in the embodiment and the like, the configuration in which the
reverse bias wiring 17B is disposed so as to surround the formation region of the auxiliary wiring has been described. However, the plane configuration of thereverse bias wiring 17B is not limited to the above. For example, thereverse bias wiring 17B may be provided so as to face at least one of four sides of the rectangular auxiliary wiring in the substrate plane. That is, thereverse bias wiring 17B may be formed apart from the auxiliary wiring in at least a part of the periphery of the auxiliary wiring. - In the case of forming the
auxiliary wiring 14 and thereverse bias wiring 17B over theplanarization layer 12 in the embodiment, thefirst pad 14A is covered with a part of the planarization layer 12 (coveringpart 12A). Thefirst pad 14A may be covered by using an insulating material different from that of theplanarization layer 12. For example, at the time of forming theinter-pixel insulating film 15 formed on thefirst electrode 13 and theauxiliary wiring 14, theinter-pixel insulating film 15 may be extended to a position where thefirst pad 14A is covered. Alternatively, the coveringpart 12A may be made of an insulating material different from both of that of theplanarization layer 12 and that of theinter-pixel insulating film 15. - Further, in the embodiment and the like, the configuration in which the
reverse bias electrode 17 is provided between theorganic layer 16 and the second electrode and is connected to thereverse bias wiring 17B has been described as an example. However, thereverse bias electrode 17 may not be disposed. That is, a configuration in which the auxiliary wiring and thereverse bias wiring 17B are electrically insulated from each other and reverse bias voltage is applied to theorganic layer 16 is sufficient. - The invention is not limited to the materials and thicknesses of the layers, the film forming methods, film forming conditions, and the like described in the embodiment and the like, but other materials and thicknesses, other film forming methods, and other film forming conditions may be used.
- In addition, in the embodiment and the like, the case where the light emission layer of the
organic layer 16 includes three layers of the red light emission layer, the green light emission layer, and the blue light emission layer has been described. The configuration of the light emission layer for emitting white light is not limited to the case. The light emission layer for emitting white light may have a structure of stacking light emission layers of two colors having a complementary relation, such as an orange light emission layer and a blue light emission layer, or a blue-green light emission layer and a red light emission layer. In the foregoing embodiment, the configuration in which the layers of three colors are stacked in the thickness direction has been described as an example. It is also possible to paint color light emission layers pixel by pixel in correspondence with the pixels of R, G, and B. - In the embodiment and the like, the case where the
first electrode 13 is an anode and thesecond electrodes first electrode 13 may be set as a cathode, and thesecond electrode 18 may be set as an anode. In this case, as the material of thesecond electrode 18, a single material or an alloy of gold, silver, platinum, copper, or the like is preferable. - The present application contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2008-278233 filed in the Japanese Patent Office on Oct. 29, 2008, the entire content of which is hereby incorporated by reference.
- It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.
Claims (8)
Priority Applications (1)
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US13/441,629 US8518754B2 (en) | 2008-10-29 | 2012-04-06 | Organic EL display and method of manufacturing the same |
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JP2008278233A JP5157825B2 (en) | 2008-10-29 | 2008-10-29 | Manufacturing method of organic EL display |
JP2008-278233 | 2008-10-29 |
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US13/441,629 Active US8518754B2 (en) | 2008-10-29 | 2012-04-06 | Organic EL display and method of manufacturing the same |
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US (2) | US8188476B2 (en) |
JP (1) | JP5157825B2 (en) |
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TW (1) | TW201023679A (en) |
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JP5157825B2 (en) | 2013-03-06 |
TW201023679A (en) | 2010-06-16 |
US20120202400A1 (en) | 2012-08-09 |
CN101728421A (en) | 2010-06-09 |
KR20100047796A (en) | 2010-05-10 |
CN103035665A (en) | 2013-04-10 |
CN103035665B (en) | 2016-08-10 |
JP2010108693A (en) | 2010-05-13 |
US8518754B2 (en) | 2013-08-27 |
US8188476B2 (en) | 2012-05-29 |
CN101728421B (en) | 2013-01-23 |
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