KR101820166B1 - White organic light emitting diode display device and method of fabricating the same - Google Patents

Abstract

A white organic light emitting diode (W-OLED) display device and a manufacturing method thereof according to the present invention enlarge a pixel electrode to a wiring and a thin film transistor region so that a moving path of an outgas generated in a color filter To prevent pixel shrinkage due to out-gas.
The W-OLED display device and the method of manufacturing the same of the present invention are characterized in that the formation of a cavity phenomenon can be suppressed by forming a color filter in a state where the gate insulating film and the protective film of the pixel region are removed.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a white organic light emitting diode (OLED) display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a white organic light emitting diode (W-OLED) display device and a method of manufacturing the same.

In recent years, there has been a growing interest in information display and a demand for a portable information medium has increased, and a lightweight flat panel display (FPD) that replaces a cathode ray tube (CRT) And research and commercialization are being carried out.

In the field of flat panel display devices, a liquid crystal display device (LCD), which is light and consumes little power, has been attracting the most attention, but the liquid crystal display device is not a light emitting device but a light receiving device, ratio and viewing angle. Therefore, a new display device which can overcome such disadvantages is being actively developed.

Since the organic light emitting diode display device, which is one of the new display devices, is self-emitting type, it has a better viewing angle and contrast ratio than the liquid crystal display device and does not require a backlight. Do. In addition, it has the advantage of being able to drive a DC low voltage and has a high response speed, and is particularly advantageous in terms of manufacturing cost.

Unlike a liquid crystal display device or a plasma display panel (PDP), the manufacturing process of the organic light emitting diode display device is not limited to the deposition and encapsulation process, Do. Further, if the organic light emitting diode display device is driven by an active matrix method having a thin film transistor (TFT) as a switching element for each pixel, even if a low current is applied, the same luminance is exhibited, It has advantages of fixed tax and large size.

Hereinafter, the basic structure and operational characteristics of the organic light emitting diode display device will be described in detail with reference to the drawings.

1 is a diagram for explaining the principle of light emission of a general organic light emitting diode display device.

A general organic light emitting diode display device includes an organic light emitting diode as shown in FIG. The organic light emitting diode includes organic compound layers 30a, 30b, 30c, 30d and 30e formed between an anode 18, which is a pixel electrode, and a cathode 28, which is a common electrode.

The hole injection layer 30a, the hole transport layer 30b, the emission layer 30c, the electron injection layer 30b, the electron injection layer 30c, and the electron injection layer 30c are formed on the organic compound layers 30a, 30b, 30c, An electron transport layer 30d, and an electron injection layer 30e.

When a driving voltage is applied to the anode 18 and the cathode 28, holes passing through the hole transport layer 30b and electrons passing through the electron transport layer 30d move to the light emitting layer 30c to form excitons, As a result, the light emitting layer 30c emits visible light.

The organic light emitting diode display device displays an image by arranging pixels having organic light emitting diodes of the above-described structure in a matrix form and selectively controlling the pixels with a data voltage and a scan voltage.

The organic light emitting diode display device is divided into an active matrix display device using a passive matrix or a switching device using a TFT. The active matrix method selectively turns on the TFT, which is an active element, to select a pixel and maintain the light emission of the pixel at a voltage held in a storage capacitor.

FIG. 2 is an equivalent circuit diagram for one pixel in a general organic light emitting diode display device. In FIG. 2, in an organic light emitting diode display device of an active matrix type, a typical 2T1C (including two transistors and one capacitor) And shows an equivalent circuit diagram.

2, the pixels of the active matrix type organic light emitting diode display device include an organic light emitting diode OLED, a data line DL and a gate line GL intersecting with each other, a switching TFT SW, a driving TFT DR and a storage capacitor Cst.

At this time, the switching TFT SW is turned on in response to a scan pulse from the gate line GL, thereby conducting a current path between the source electrode and the drain electrode. The data voltage from the data line DL during the on-time period of the switching TFT SW is supplied to the gate electrode of the driving TFT DR and the storage capacitor Cst through the source electrode and the drain electrode of the switching TFT SW, .

At this time, the driving TFT DR controls a current flowing in the organic light emitting diode OLED according to a data voltage applied to its gate electrode. Then, the storage capacitor Cst stores the voltage between the data voltage and the low potential power supply voltage VSS, and keeps it constant for one frame period.

In recent years, attention has focused on the mid- and large-sized display market away from small display panels for portable devices, and white organic light emitting diodes (W-OLEDs) have attracted much attention as a technology for meeting such market demand . The W-OLED uses a color filter to realize red, green and blue colors, and uses a planarizing film to compensate the step of the color filter.

3 is a cross-sectional view schematically showing the structure of a general white organic light emitting diode display device.

Referring to FIG. 3, a typical W-OLED display device uses red, green, and blue colors using color filters 6G, 6W, 6R, and 6B. After the color filters 6G, 6W, 6R and 6B are patterned on the substrate 10, a photoacid material (not shown) is formed as a flattening film 15c for compensating the step difference of the color filters 6G, 6W, 6R and 6B. .

In order to realize the color characteristic, the color filters 6G, 6W, 6R, and 6B are formed to have a thickness of about 1 mu m to 2 mu m, and in order to compensate the step difference, The flattening film 15c is formed.

After forming the planarization layer 15c, an anode 18 is formed of Indium Tin Oxide (ITO).

At this time, a bank layer 25 is formed so as to overlap with the anode 18 by about 2 mu m. In the deterioration process, the color filters 6G, 6W, 6R, and 6B and the out- outgas occurs, which travels through the anode 18 interface to cause pixel shrinkage from the edge of the pixel. The out-gas affects the reliability of the white organic light emitting layer 30, causing pixel shrinkage.

FIG. 4 is a photograph showing, for example, pixel shrinkage due to out-gas generated in a deterioration process.

Referring to FIG. 4, although the vacuum annealing is performed after the deposition of the organic light emitting layer, the pixel shrinkage occurs after 240 hours at 80 ° C.

That is, the material of the color filter used in the W-OLED includes a dye, a pigment, and a dispersing agent, which are low-molecular substances that cause out-gas emission during degradation, The reliability of the light emitting layer is influenced, and pixel shrinkage occurs.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a white organic light emitting diode display device and a method of manufacturing the same which can prevent pixel shrinkage due to out-gas.

Other objects and features of the present invention will be described in the following description of the invention and the claims.

In order to achieve the above object, a white organic light emitting diode display element of the present invention includes a data line connected to a first source electrode intersecting a gate line, a driving voltage line overlapping the sustain electrode, Green, and blue color filters provided on the surface of the substrate where the gate insulating film and the protective film of the pixel region are removed and exposed, a planarization film provided on the substrate provided with the color filter, And the pixel electrode overlaps the driving voltage line and the data line.
At this time, the gate insulating layer may be removed from the pixel region such that the side surface thereof coincides with the side surfaces of the first source / drain electrode and the second source / drain electrode.

In this case, the color filter is formed on the substrate surface of the pixel region from which the gate insulating film and the protective film are removed.

The pixel electrode is formed to extend to an upper portion of the data line and the switching thin film transistor and the driving thin film transistor region, thereby increasing a movement path of the outgas generated in the color filter and the planarization layer thereunder.

A method of manufacturing a white organic light emitting diode display device according to the present invention includes the steps of forming a conductive film on the entire surface of a substrate on which a first active layer and a second active layer are formed and selectively removing the conductive film to form the first active layer and the second active layer, Forming a gate insulating film on the surface of the substrate by removing the insulating film in a pixel region in which an image is displayed, forming a first insulating film on the first insulating film, Forming a data line connected to the first source electrode and a driving voltage line overlapping the sustain electrode on the sustain electrode, intersecting the gate line, 1 protective film is formed on the substrate on which the source / drain electrode and the second source / drain electrode are formed Forming a red, green and blue color filter on the exposed substrate surface of the pixel region; forming a planarization film on the substrate on which the color filter is formed; And forming a pixel electrode overlapping the driving voltage line and the data line.
At this time, the gate insulating layer may be removed from the pixel region such that the side surface thereof coincides with the side surfaces of the first source / drain electrode and the second source / drain electrode.

At this time, the gate insulating film and the protective film of the pixel region are selectively removed to expose the substrate surface of the pixel region.

Here, the color filter is formed on the substrate surface of the exposed pixel region.

And forming a first contact hole and a second contact hole for selectively removing the planarization layer and the protective layer to expose the first drain electrode and the second drain electrode, respectively.

Here, the pixel electrode is electrically connected to the second drain electrode through the second contact hole.

And forming a third contact hole exposing the second gate electrode by selectively removing the planarization layer, the protection layer, and the gate insulation layer.

The method may further include forming a connection electrode electrically connecting the first drain electrode and the second gate electrode through the first contact hole and the third contact hole.

As described above, the white organic light emitting diode display device and the method of manufacturing the same according to the present invention enlarge the interface of the pixel electrode, which is the movement path of the out-gas generated in the color filter and the planarization film, It is possible to prevent pixel shrinkage due to gas. As a result, an effect of securing the reliability of the white organic light emitting layer can be obtained.

In addition, the white organic light emitting diode display device and the method of manufacturing the same according to the present invention provide the effect of suppressing the occurrence of a cavity phenomenon by forming a color filter in a state where the gate insulating film and the protective film in the pixel region are removed.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram for explaining the principle of light emission of a general organic light emitting diode display element. FIG.
FIG. 2 is an equivalent circuit diagram for one pixel in a general organic light emitting diode display device. FIG.
3 is a cross-sectional view schematically showing the structure of a general white organic light emitting diode display device.
FIG. 4 is a photograph showing, for example, pixel shrinkage caused by an out-gas generated during a deterioration process. FIG.
5 is a cross-sectional view schematically showing the structure of a white organic light emitting diode display device according to an embodiment of the present invention.
6 is a plan view schematically showing a pixel structure of a white organic light emitting diode display device according to an embodiment of the present invention.
7A to 7J are sectional views sequentially showing a method of manufacturing a white organic light emitting diode display device according to an embodiment of the present invention shown in FIG.
8A to 8G are plan views sequentially illustrating a method of manufacturing a white organic light emitting diode display device according to an embodiment of the present invention shown in FIG.

Hereinafter, preferred embodiments of a white organic light emitting diode display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 5 is a cross-sectional view schematically illustrating the structure of a white organic light emitting diode display device according to an embodiment of the present invention. Referring to FIG. 5, a white organic light emitting diode (W-OLED) And shows one pixel of the display element.

In this case, the one pixel includes a green sub-pixel, a white sub-pixel, a red sub-pixel, and a blue sub-pixel, for example. It is not.

FIG. 6 is a plan view schematically illustrating a pixel structure of a W-OLED display device according to an embodiment of the present invention, illustrating the structure of a red sub-pixel.

6 illustrates a 2T1C sub-pixel including two transistors and one capacitor. However, the present invention is not limited thereto, and the present invention can be applied to any number of sub-pixels regardless of the number of transistors and capacitors It is possible.

As shown in the drawing, a W-OLED display device according to an embodiment of the present invention includes a gate line 116 including a first gate electrode 121 on a substrate 110 made of an insulating material such as transparent glass or plastic, And a storage electrode 120 including a first gate electrode 121a and a second gate electrode 121a.

The gate line 116 transmits a gate signal and extends in the horizontal direction. The gate line 116 includes a wide end portion (not shown) for connection to another layer or an external driving circuit (not shown), and the first gate electrode 121 includes a gate line 116, . The gate line 116 may extend and be directly connected to the gate drive circuit when a gate drive circuit for generating a gate signal is integrated on the substrate 110. [

The sustain electrode 120 is separated from the gate line 116, extends in the longitudinal direction, is turned to the left for a while, and extends upward to be connected to the second gate electrode 121a.

A gate insulating film composed of silicon nitride (SiNx) or silicon dioxide (SiO ₂ ) or the like is formed on the sustain electrode 120 including the gate line 116 and the second gate electrode 121a including the first gate electrode 121 115a.

A first active layer 124 and a second active layer 124a made of an oxide semiconductor are formed on the gate insulating layer 115a. The first active layer 124 and the second active layer 124a are located on the first gate electrode 121 and the second gate electrode 121a, respectively.

Although the first active layer 124 and the second active layer 124a are made of oxide semiconductors, the present invention is not limited to the first active layer 124 and the second active layer 124a. The active layer 124 and the second active layer 124a may be made of hydrogenated amorphous silicon or crystallized silicon.

The oxide thin film transistor in which the oxide semiconductor is applied to the active layers 124 and 124a has high mobility and can be manufactured at a low temperature, so that it can be used in a transparent electronic circuit.

In addition, the oxide thin film transistor has an n + layer-free structure unlike the conventional amorphous silicon thin film transistor, which simplifies the process. However, since the oxide semiconductor has a weak bonding structure, an etch stopper 126, 126a is formed as a barrier layer to prevent damage to the back channel region to the active layer 124 And 124a, respectively.

The oxide thin film transistor according to an embodiment of the present invention may be formed by forming an active layer 124 or 124a using an amorphous zinc oxide (ZnO) semiconductor, for example, to satisfy high mobility and constant current test conditions, And has the advantage of being applicable to a large area display.

That is, the zinc oxide can realize all three properties of conductivity, semiconductivity and resistance according to the oxygen content, and the oxide thin film transistor in which the amorphous zinc oxide semiconductor material is applied to the active layers 124 and 124a is a large- Lt; / RTI >

In recent years, a great deal of attention and activity have been concentrated on transparent electronic circuits. Since the oxide thin film transistor in which the amorphous zinc oxide semiconductor material is applied to the active layers 124 and 124a has high mobility and can be manufactured at a low temperature, There is an advantage that it can be used in a transparent electronic circuit.

As described above, the first etch-stopper 126 and the second etch-stopper 126a are formed on the first active layer 124 and the second active layer 124a, respectively, A line 117, a driving voltage line 119, first source / drain electrodes 122 and 123, and second source / drain electrodes 122a and 123a are formed.

The data line 117 transmits a data signal and extends in the longitudinal direction to cross the gate line 116. At this time, the data line 117 is connected to the first source electrode 122 extending toward the first gate electrode 121 and the end portion (not shown) having a large area for connection to another layer or an external driver circuit (not shown) . When the data driving circuit for generating the data signal is integrated on the substrate 110, the data line 117 may be extended and directly connected to the data driving circuit.

The driving voltage line 119 transmits a driving voltage and extends in the longitudinal direction to intersect the gate line 116. At this time, the driving voltage line 119 includes a second source electrode 122a extending toward the second gate electrode 121a. The driving voltage line 119 overlaps the sustain electrode 120 and may be connected to each other.

The first source electrode 122 and the first drain electrode 123 face each other with respect to the first gate electrode 121 and the second source electrode 122a and the second drain electrode 123a face each other. Are opposed to each other with respect to the second gate electrode 121a.

A passivation layer 120 is formed on the substrate 110 on which the data line 117, the driving voltage line 119, the first source / drain electrodes 122 and 123 and the second source / drain electrodes 122a and 123a are formed. ) 115b are formed.

Here, the W-OLED display device according to the embodiment of the present invention is characterized in that the gate insulating layer 115a and the protective layer 115b of the pixel region in which an image is displayed are removed, Green, and blue color filters 106R, 106G, and 106B are formed on the red, green, and blue LEDs 110, respectively.

The formation of the cavity phenomenon can be suppressed by forming the color filters 106R, 106G and 106B in a state in which the gate insulating film 115a and the protective film 115b of the pixel region are removed.

A planarization film 115c is formed on the entire surface of the substrate 110 on which the color filters 106R, 106G and 106B are formed to compensate the step difference between the color filters 106R, 106G and 106B and the thin film transistor. At this time, photoacid can be used as the planarization film 115c.

The first contact hole 140 and the second contact hole 140a are formed in the planarization layer 115c and the protective layer 115b to expose the first drain electrode 123 and the second drain electrode 123a, And a third contact hole 140b is formed in the planarization layer 115c and the passivation layer 115b and the gate insulation layer 115a to expose the second gate electrode 121a.

A pixel electrode 118 and a connecting electrode 105 are formed on the planarization layer 115c. They may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a reflective conductive material such as aluminum, silver or an alloy thereof.

The pixel electrode 118 as an anode is electrically connected to the second drain electrode 123a through the second contact hole 140a while the connection electrode 105 is electrically connected to the first contact hole 140a And the third contact hole 140b to electrically connect the first drain electrode 123 and the second gate electrode 121a.

Particularly, the pixel electrode 118 according to the embodiment of the present invention is formed by connecting the interface, which is the movement path of outgas generated in the color filters 106R, 106G, and 106B and the planarization layer 115c, Line 117) and the thin film transistor region, thereby preventing pixel shrinkage due to out-gas. As a result, an effect of securing the reliability of the white organic light emitting layer can be obtained. 6, the pixel electrode 118 is extended to the upper portion of the data line 117 in the embodiment of the present invention (for example, in the case of the 15 inch model, one direction The aperture ratio can be increased to 10 mu m).

A partition 125 is formed on the substrate 110 on which the pixel electrode 118 is formed. At this time, the barrier rib 125 surrounds the edge of the pixel electrode 118 and defines an opening, and is made of an organic insulating material or an inorganic insulating material. The barrier rib 125 may also be made of a photoresist containing a black pigment. In this case, the barrier rib 125 serves as a light shielding member.

On the substrate 110 on which the barrier ribs 125 are formed, a white organic light emitting layer 130 is formed.

At this time, the organic light emitting layer 130 may have a multi-layer structure including an auxiliary layer for improving the luminous efficiency of the light emitting layer in addition to the light emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

A common electrode 128, which is a cathode, is formed on the organic light emitting layer 130. At this time, the common electrode 128 receives a common voltage and is formed of a reflective conductive material including calcium (Ca), barium (Ba), magnesium (Mg), aluminum, silver, etc. or a transparent conductive material such as ITO or IZO Lt; / RTI >

In the W-OLED display device having such a structure, a first gate electrode 121 connected to the gate line 116, a first source electrode 122 connected to the data line 117, The electrode 123 together with the first active layer 124 constitute a switching thin film transistor (switching TFT). A second gate electrode 121a connected to the first drain electrode 123 and a second source electrode 122a connected to the driving voltage line 119 are connected to the pixel electrode 118, And the second drain electrode 123a together with the second active layer 124a constitute a driving TFT.

The organic light emitting layer 130 and the common electrode 128 constitute an organic light emitting diode and the storage electrode 120 and the driving voltage line 119 overlap each other, .

Hereinafter, a method of manufacturing a W-OLED display device according to an embodiment of the present invention will be described in detail with reference to the drawings.

FIGS. 7A to 7J are cross-sectional views sequentially illustrating a method of manufacturing a white organic light emitting diode display device according to an embodiment of the present invention shown in FIG. 5. Referring to FIG. 7A, a method of manufacturing a pixel including a driving thin film transistor .

8A to 8G are plan views sequentially illustrating a method of manufacturing a white organic light emitting diode display device according to an embodiment of the present invention shown in FIG.

7A and 8A, a gate line 116 and a second gate electrode 121a including a first gate electrode 121 are formed on a substrate 110 made of an insulating material such as transparent glass or plastic, Thereby forming the sustain electrodes 120 including the sustain electrodes.

At this time, when an oxide semiconductor is applied to the thin film transistor of the present invention, a substrate capable of low-temperature deposition and applicable to a low temperature process such as a plastic substrate and a soda lime glass can be used. In addition, since it exhibits amorphous characteristics, it is possible to use a substrate for a large-area display.

The sustain electrode 120 including the gate line 116 including the first gate electrode 121 and the second gate electrode 121a may be formed by depositing a first conductive film on the entire surface of the substrate 110, And then selectively patterned through a lithography process.

Here, the first conductive film may be formed of an aluminum-based metal such as aluminum (Al) or an aluminum alloy, a series metal such as silver or silver alloy, a copper-based metal such as copper (Cu) or a copper alloy, molybdenum A low resistance opaque conductive material such as molybdenum metal, chromium (Cr), tantalum (Ta), or titanium (Ti) may be used. However, they may have a multilayer structure including two conductive films having different physical properties. One of the conductive films may be made of a metal having a low resistivity, for example, an aluminum-based metal, a silver-based metal, a copper-based metal, or the like so as to reduce signal delay or voltage drop. Alternatively, the other conductive film may be made of a material having excellent physical, chemical and electrical contact properties with other materials, particularly ITO and IZO, such as molybdenum-based metals, chromium, titanium, tantalum, and the like.

The side surface of the sustain electrode 120 including the gate line 116 including the first gate electrode 121 and the second gate electrode 121a may be inclined with respect to the surface of the substrate 110, From about 30 [deg.] To about 80 [deg.].

As described above, the gate line 116 transmits the gate signal and extends in the horizontal direction. The gate line 116 includes a wide end portion (not shown) for connection to another layer or an external driving circuit (not shown), and the first gate electrode 121 includes a gate line 116, . The gate line 116 may extend and be directly connected to the gate drive circuit when a gate drive circuit for generating a gate signal is integrated on the substrate 110. [

The sustain electrode 120 is separated from the gate line 116, extends in the longitudinal direction, is turned to the left for a while, and extends upward to be connected to the second gate electrode 121a.

Next, as shown in FIGS. 7B and 8B, a substrate (not shown) having a sustain electrode 120 including a gate line 116 including the first gate electrode 121 and a second gate electrode 121a A semiconductor thin film made of an oxide semiconductor and an insulating film 115 is formed on the entire surface of the substrate 110.

As the insulating layer 115, an inorganic insulating layer such as silicon nitride (SiNx) or silicon dioxide (SiO ₂ ), or a high dielectric oxide layer such as hafnium (Hf) oxide or aluminum oxide may be used.

Thereafter, the oxide semiconductor is selectively removed through a photolithography process to form a first active layer 124 made of the oxide semiconductor on the first gate electrode 121 and a second gate electrode 121a, Respectively.

At this time, as described above, since the active layers 124 and 124a are formed using amorphous zinc oxide (ZnO) semiconductor, for example, high mobility and constant current test conditions are satisfied and uniform characteristics are secured, Has advantages that can be applied to displays.

That is, the zinc oxide can realize all three properties of conductivity, semiconductivity and resistance according to the oxygen content, and the oxide thin film transistor in which the amorphous zinc oxide semiconductor material is applied to the active layers 124 and 124a is a large- Lt; / RTI >

In recent years, a great deal of attention and activity have been concentrated on transparent electronic circuits. Since the oxide thin film transistor in which the amorphous zinc oxide semiconductor material is applied to the active layers 124 and 124a has high mobility and can be manufactured at a low temperature, There is an advantage that it can be used in a transparent electronic circuit.

In the case of using hydrogenated amorphous silicon as the first active layer 124 and the second active layer 124a, n + amorphous silicon is deposited and patterned together with the amorphous silicon to form an ohmic contact member, and polycrystalline silicon A thin film transistor can be formed in a coplanar structure instead of a top gate structure. As such, the present invention is applicable regardless of the material of the first active layer 124 and the second active layer 124a and the structure of the thin film transistor.

Next, as shown in FIGS. 7C and 8C, a predetermined insulating film is formed on the entire surface of the substrate 110 on which the first active layer 124 and the second active layer 124a are formed, and then a photolithography process is performed The first etch-stopper 126 and the second etch-stopper 126 are formed on the first active layer 124 and the second active layer 124a, respectively, by selectively removing the insulating layer.

Here, the first active layer 124 and the second active layer 124a and the first etch-stopper 126 and the second etch-stopper 126 may be formed by using a half-tone mask or a diffraction mask Or may be simultaneously formed through a single photolithography step.

Next, as shown in FIGS. 7D and 8D, the first active layer 124 and the second active layer 124a and the first etch-stopper 126 and the second etch-stopper 126 A second conductive layer is formed on the entire surface of the substrate 110 on which the data line 117 is formed and then the insulating layer and the second conductive layer are selectively removed through a photolithography process, The first source / drain electrodes 122 and 123 and the second source / drain electrodes 122a and 123a.

At this time, the insulating film in the pixel region is removed to form the gate insulating film 115a. However, the present invention is not limited thereto, and the gate insulating film 115a can be patterned when the protective film is to be described later.

As the second conductive film, an aluminum-based metal such as aluminum (Al) or an aluminum alloy, a silver-based alloy such as silver or a silver alloy, a copper-based metal such as copper (Cu) or a copper alloy, molybdenum A low resistance opaque conductive material such as molybdenum metal, chromium (Cr), tantalum (Ta), or titanium (Ti) may be used. However, they may have a multilayer structure including two conductive films having different physical properties. One of the conductive films may be made of a metal having a low resistivity, for example, an aluminum-based metal, a silver-based metal, a copper-based metal, or the like so as to reduce signal delay or voltage drop. Alternatively, the other conductive film may be made of a material having excellent physical, chemical and electrical contact properties with other materials, particularly ITO and IZO, such as molybdenum-based metals, chromium, titanium, tantalum, and the like.

The side surfaces of the data line 117, the driving voltage line 119, the first source / drain electrodes 122 and 123 and the second source / drain electrodes 122a and 123a are also connected to a surface of the substrate 110 by about 30 Deg.] To 80 [deg.].

As described above, the data line 117 transmits a data signal and extends in the longitudinal direction to intersect the gate line 116. At this time, the data line 117 is connected to the first source electrode 122 extending toward the first gate electrode 121 and the end portion (not shown) having a large area for connection to another layer or an external driver circuit (not shown) . When the data driving circuit for generating the data signal is integrated on the substrate 110, the data line 117 may be extended and directly connected to the data driving circuit.

The driving voltage line 119 transmits a driving voltage and extends in the longitudinal direction to intersect the gate line 116. At this time, the driving voltage line 119 includes a second source electrode 122a extending toward the second gate electrode 121a. The driving voltage line 119 overlaps the sustain electrode 120 and may be connected to each other.

The first source electrode 122 and the first drain electrode 123 face each other with respect to the first gate electrode 121 and the second source electrode 122a and the second drain electrode 123a face each other. Are opposed to each other with respect to the second gate electrode 121a.

Next, as shown in FIGS. 7E and 8E, the data line 117, the driving voltage line 119, the first source / drain electrodes 122 and 123, and the second source / drain electrodes 122a and 123a A protective film 115b is formed by selectively removing the insulating film of the pixel region through a photolithography process.

At this time, the gate insulating layer 115a may be patterned by patterning the passivation layer 115b to expose the substrate 110 in the pixel region to the outside, as described above.

As described above, the W-OLED display device according to the embodiment of the present invention is characterized in that the gate insulating layer 115a and the protective layer 115b of the pixel region in which an image is displayed are removed, Green, and blue color filters 106R, 106G, and 106B are formed on the red, green, and blue LEDs 110, respectively.

Next, as shown in FIGS. 7F and 8F, on the entire surface of the substrate 110 on which the color filters 106R, 106G, and 106B are formed, the color filters 106R, 106G, and 106B and the thin film transistors Thereby forming a planarizing film 115c. At this time, photoacid can be used as the planarization film 115c.

Thereafter, the first contact hole 140 exposing the first drain electrode 123 and the second drain electrode 123a by selectively removing the planarization layer 115c and the protective layer 115b through a photolithography process, The second contact hole 140a is formed and the third contact hole exposing the second gate electrode 121a by selectively removing the planarization film 115c, the protection film 115b and the gate insulation film 115a, 140b.

7G and 8G, a third conductive layer is deposited on the entire surface of the substrate 110 on which the planarization layer 115c is formed, and then the third conductive layer is selectively removed through a photolithography process, A pixel electrode 118 and a connection electrode 105 are formed of a third conductive film.

At this time, the third conductive layer may be formed of a transparent conductive material such as ITO or IZO.

The pixel electrode 118 as an anode is electrically connected to the second drain electrode 123a through the second contact hole 140a while the connection electrode 105 is electrically connected to the first contact hole 140a And the third contact hole 140b to electrically connect the first drain electrode 123 and the second gate electrode 121a.

As described above, the pixel electrode 118 according to the embodiment of the present invention is formed such that the interface, which is the movement path of the out-gas generated in the color filters 106R, 106G, and 106B and the planarization film 115c, (The data line 117) and the thin film transistor region, it is possible to prevent pixel shrinkage due to out-gas.

Next, as shown in FIG. 7H, the barrier ribs 125 partitioning the sub-pixels are formed on the substrate 110 on which the pixel electrode 118 and the connection electrode 105 are formed.

At this time, the barrier ribs 125 surround the periphery of the pixel electrode 118 to define openings, and are made of an organic insulating material or an inorganic insulating material. The barrier rib 125 may also be made of a photoresist containing a black pigment. In this case, the barrier rib 125 serves as a light shielding member.

7I, a white organic light emitting layer 130 is formed on the substrate 110 on which the barrier ribs 125 are formed.

As described above, the organic light emitting layer 130 may have a multi-layer structure including a light emitting layer and a sub-layer for improving the light emitting efficiency of the light emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

Next, a common electrode 128, which is a cathode, is formed on the organic light emitting layer 130, as shown in FIG. 7J.

At this time, the common electrode 128 receives a common voltage and is formed of a reflective conductive material including calcium (Ca), barium (Ba), magnesium (Mg), aluminum, silver, etc. or a transparent conductive material such as ITO or IZO Lt; / RTI >

While a great many are described in the foregoing description, it should be construed as an example of preferred embodiments rather than limiting the scope of the invention. Therefore, the invention should not be construed as limited to the embodiments described, but should be determined by equivalents to the appended claims and the claims.

106R, 106G, 106B: color filter 110: substrate
116: gate line 117: data line
118: pixel electrode 119: driving voltage line
120: sustain electrode 121, 121a: gate electrode
122, 122a: source electrode 123, 123a: drain electrode
124, 124a: active layer 125: barrier rib
126,126a: etch-starter 128: common electrode
130: organic light emitting layer

Claims (10)

Forming a sustain electrode including a gate line including a first gate electrode and a second gate electrode on a substrate;
Forming an insulating film on the substrate on which the gate line and the sustain electrode are formed;
Forming a first active layer and a second active layer on each of the first gate electrode and the second gate electrode;
Forming a conductive film on the entire surface of the substrate on which the first active layer and the second active layer are formed;
The conductive film is selectively removed to form a first source / drain electrode and a second source / drain electrode on each of the first active layer and the second active layer, and the insulating film is removed to a pixel region where an image is displayed Forming a gate insulating film on which the surface of the substrate is exposed;
Forming a data line connected to the first source electrode and a driving voltage line overlapping the sustain electrode on the sustain electrode, the drive line intersecting the gate line by selectively removing the conductive film;
Forming a protective film on the substrate on which the data line, the driving voltage line, the first source / drain electrode, and the second source / drain electrode are formed;
Forming red, green, and blue color filters on the exposed substrate surface of the pixel region;
Forming a planarization film on the substrate on which the color filter is formed;
Forming a pixel electrode on the planarization film, the pixel electrode extending to the upper portion of the data line and overlapping the driving voltage line and the data line;
Forming a partition for partitioning the pixel region on the substrate on which the pixel electrode is formed;
Forming a white organic light emitting layer on the substrate on which the barrier ribs are formed; And
And forming a common electrode on the organic light emitting layer,
The gate insulating layer is a white organic light emitting diode (W-OLED) display element in which a side surface of the gate insulating layer is removed from the pixel region so as to coincide with a side surface of the first source / drain electrode and the second source / ≪ / RTI > delete delete The method of claim 1, further comprising forming first and second contact holes that selectively expose the planarization layer and the protective layer to expose the first drain electrode and the second drain electrode, respectively W-OLED display device. 5. The method of claim 4, wherein the pixel electrode is formed to be electrically connected to the second drain electrode through the second contact hole. 5. The method according to claim 4, further comprising the step of selectively removing the planarization layer, the protective layer, and the gate insulation layer to form a third contact hole exposing the second gate electrode. Way. 7. The method of claim 6, further comprising forming a connection electrode electrically connecting the first drain electrode and the second gate electrode through the first contact hole and the third contact hole, A method of manufacturing a display device. A sustain electrode comprising a gate line including a first gate electrode provided on a substrate and a second gate electrode;
A gate insulating film provided on the gate line and the sustain electrode;
A first active layer and a second active layer provided on the first gate electrode and the second gate electrode, respectively;
A first source / drain electrode and a second source / drain electrode provided on each of the first active layer and the second active layer;
A driving voltage line intersecting the gate line, a data line connected to the first source electrode, and a driving voltage line overlapping the sustain electrode on the sustain electrode;
A protective film provided on the substrate including the data line, the driving voltage line, the first source / drain electrode, and the second source / drain electrode;
A red, green and blue color filter provided on a surface of the substrate on which the gate insulating layer and the protective layer are removed and exposed;
A planarizing film provided on the substrate provided with the color filter;
A pixel electrode extending to the top of the data line on the planarization film and overlapping the driving voltage line and the data line;
A barrier rib provided on the substrate having the pixel electrode to partition the pixel region;
A white organic light emitting layer provided on the substrate provided with the barrier rib; And
And a common electrode provided on the organic light emitting layer,
Wherein the gate insulating film is removed from the pixel region so that a side surface of the gate insulating film matches a side surface of the first source / drain electrode and the second source / drain electrode. The W-OLED display device according to claim 8, further comprising a connection electrode provided on the planarization film and electrically connecting the first drain electrode and the second gate electrode. The W-OLED display device according to claim 8, wherein the sustain electrode is separated from the gate line and extends in the longitudinal direction, and is connected to the second gate electrode, unlike the gate line extending in the transverse direction.

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