KR101970570B1 - Organic light emitting diode display device and method of fabricating the same - Google Patents

Abstract

An organic light emitting diode (OLED) display device and a method of manufacturing the same according to the present invention are a bottom emission organic light emitting diode display device using a polycrystalline silicon thin film transistor (TFT) A substrate divided into a TFT portion and a capacitor forming portion to improve the aperture ratio by reducing the area of the capacitor by using the same conductive film as the light blocking film under the TFT portion as the electrode of the capacitor. A light shielding film and a first sustain electrode respectively formed on the TFT portion and the capacitor formation portion of the substrate; A buffer layer formed on the substrate on which the light shielding film and the first sustain electrode are formed; An active layer and a second sustain electrode formed on the buffer layer and formed on the TFT portion and the capacitor formation portion of the substrate, respectively; A gate insulating film formed on the substrate on which the active layer and the second sustain electrode are formed; A gate electrode and a third sustain electrode formed on the gate insulating film and formed in the TFT portion and the capacitor forming portion of the substrate, respectively; An interlayer insulating film formed on the substrate on which the gate electrode and the third sustain electrode are formed; A driving voltage line formed on the interlayer insulating film and including a source / drain electrode and a fourth sustain electrode respectively formed in the TFT portion and the capacitor forming portion of the substrate; And a protective film formed on a substrate on which a driving voltage line including the source / drain electrode and the fourth sustain electrode is formed, wherein the first, second, third, and fourth sustain electrodes overlap each other, The sustain electrode and the third sustain electrode are connected to each other, and the second sustain electrode and the fourth sustain electrode are connected to each other to constitute a capacitor having a triple parallel structure.

Description

Technical Field [0001] The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same,

The present invention relates to an organic light emitting diode display device and a method of manufacturing the same, and more particularly, to a bottom emission organic light emitting diode display device using a polycrystalline silicon thin film transistor and a method of manufacturing the same.

In recent years, there has been a growing interest in information display and a demand for a portable information medium has increased, and a lightweight flat panel display (FPD) that replaces a cathode ray tube (CRT) And research and commercialization are being carried out.

In the field of flat panel display devices, a liquid crystal display device (LCD), which is light and consumes little power, has been attracting the most attention, but the liquid crystal display device is not a light emitting device but a light receiving device, ratio and viewing angle. Therefore, a new display device which can overcome such disadvantages is being actively developed.

The organic light emitting diode (OLED) display device, which is one of the new display devices, has a better viewing angle and contrast ratio than the liquid crystal display device because it is self-emitting type, and since a backlight is not needed, And is also advantageous in terms of power consumption. In addition, it has the advantage of being able to drive a DC low voltage and has a high response speed, and is particularly advantageous in terms of manufacturing cost.

Unlike a liquid crystal display device or a plasma display panel (PDP), the manufacturing process of the organic light emitting diode display device is not limited to the deposition and encapsulation process, Do. Further, if the organic light emitting diode display device is driven by an active matrix method including a thin film transistor (TFT) as a switching element for each pixel, even if a low current is applied, the same luminance is exhibited, It has advantages of fixed tax and large size.

Hereinafter, the basic structure and operational characteristics of the organic light emitting diode display device will be described in detail with reference to the drawings.

1 is a diagram for explaining the principle of light emission of a general organic light emitting diode display device.

A general organic light emitting diode display device includes an organic light emitting diode as shown in FIG. The organic light emitting diode includes organic compound layers 30a, 30b, 30c, 30d and 30e formed between an anode 18, which is a pixel electrode, and a cathode 28, which is a common electrode.

The hole injection layer 30a, the hole transport layer 30b, the emission layer 30c, the electron injection layer 30b, the electron injection layer 30c, and the electron injection layer 30c are formed on the organic compound layers 30a, 30b, 30c, An electron transport layer 30d, and an electron injection layer 30e.

When a driving voltage is applied to the anode 18 and the cathode 28, holes passing through the hole transport layer 30b and electrons passing through the electron transport layer 30d move to the light emitting layer 30c to form excitons, As a result, the light emitting layer 30c emits visible light.

The organic light emitting diode display device displays an image by arranging pixels having organic light emitting diodes of the above-described structure in a matrix form and selectively controlling the pixels with a data voltage and a scan voltage.

The organic light emitting diode display device is divided into a passive matrix type display device or an active matrix type display device using a TFT as a switching device. The active matrix method selectively turns on the TFT, which is an active element, to select a pixel and maintain the light emission of the pixel at a voltage held in a storage capacitor.

FIG. 2 is an equivalent circuit diagram for one pixel in a general organic light emitting diode display device. In FIG. 2, in an organic light emitting diode display device of an active matrix type, a typical 2T1C (including two transistors and one capacitor) And shows an equivalent circuit diagram.

2, the pixels of the active matrix type organic light emitting diode display device include an organic light emitting diode OLED, a data line DL and a gate line GL intersecting with each other, a switching TFT SW, a driving TFT DR and a storage capacitor Cst.

At this time, the switching TFT SW is turned on in response to a scan pulse from the gate line GL, thereby conducting a current path between the source electrode and the drain electrode. The data voltage from the data line DL during the on-time period of the switching TFT SW is supplied to the gate electrode of the driving TFT DR and the storage capacitor Cst through the source electrode and the drain electrode of the switching TFT SW, .

At this time, the driving TFT DR controls a current flowing in the organic light emitting diode OLED according to a data voltage applied to its gate electrode. Then, the storage capacitor Cst stores the voltage between the data voltage and the low potential power supply voltage VSS, and keeps it constant for one frame period.

The organic light emitting diode display device thus constructed uses amorphous silicon or polycrystalline silicon as an active layer of a TFT, and a polycrystalline silicon TFT using the polycrystalline silicon as an active layer uses a doped active layer as an electrode of a capacitor.

In addition, the bottom emission type organic light emitting diode display device using the polycrystalline silicon TFT has a proven method of device structure and reliability, but the selection of the TFT design is limited in order to secure an aperture ratio. In this case, in order to block the influence of external light, a light shielding film should be formed under the active layer larger than the channel region. When the light shielding film overlaps with the signal wiring, parasitic capacitance is generated and affects the operation of the TFT.

An object of the present invention is to provide an organic light emitting diode display device having improved aperture ratio and resolution in a rear emission type organic light emitting diode display device using a polycrystalline silicon thin film transistor and a manufacturing method thereof have.

It is another object of the present invention to provide an organic light emitting diode display device which improves the reliability of a thin film transistor by preventing a problem of coupling of a light blocking film by a signal wiring in an organic light emitting diode display device of a back light emitting type using a polycrystalline silicon thin film transistor And a manufacturing method thereof.

Other objects and features of the present invention will be described in the following description of the invention and the claims.

According to an aspect of the present invention, there is provided an organic light emitting diode display device including: a substrate divided into a TFT portion and a capacitor forming portion; A light shielding film and a first sustain electrode respectively formed on the TFT portion and the capacitor formation portion of the substrate; A buffer layer formed on the substrate on which the light shielding film and the first sustain electrode are formed; An active layer and a second sustain electrode formed on the buffer layer and formed on the TFT portion and the capacitor formation portion of the substrate, respectively; A gate insulating film formed on the substrate on which the active layer and the second sustain electrode are formed; A gate electrode and a third sustain electrode formed on the gate insulating film and formed in the TFT portion and the capacitor forming portion of the substrate, respectively; An interlayer insulating film formed on the substrate on which the gate electrode and the third sustain electrode are formed; A driving voltage line formed on the interlayer insulating film and including a source / drain electrode and a fourth sustain electrode respectively formed in the TFT portion and the capacitor forming portion of the substrate; And a protective film formed on a substrate on which a driving voltage line including the source / drain electrode and the fourth sustain electrode is formed, wherein the first, second, third, and fourth sustain electrodes overlap each other, The sustain electrode and the third sustain electrode are connected to each other, and the second sustain electrode and the fourth sustain electrode are connected to each other to constitute a capacitor having a triple parallel structure.

In this case, the light shielding film is formed so as to cover the active layer above the light shielding film.

The active layer is made of polycrystalline silicon and the second sustain electrode is made of doped polycrystalline silicon.

The light shielding film and the first sustain electrode may be formed of an aluminum-based metal of aluminum (Al) or an aluminum alloy, a silver-based metal of silver (Ag) or a silver alloy, a copper-based metal of copper (Cu) (Mo), a molybdenum-based metal of a molybdenum alloy, chromium (Cr), tantalum (Ta), and titanium (Ti).

And the first sustain electrode is electrically connected to the third sustain electrode on the first contact hole through the first contact hole.

And the light blocking film is electrically connected to the driving voltage line through a connection hole.

 A method of manufacturing an organic light emitting diode display device according to the present invention includes: providing a substrate separated from a TFT portion and a capacitor forming portion; Forming a light shielding film and a first sustain electrode on the TFT portion and the capacitor forming portion of the substrate, respectively; Forming a buffer layer on the substrate on which the light shielding film and the first sustain electrode are formed; Forming an active layer and a second sustain electrode on the TFT portion and the capacitor forming portion of the substrate, respectively, on the buffer layer; Forming a gate insulating film on the substrate on which the active layer and the second sustain electrode are formed; Forming a gate electrode and a third sustain electrode on the TFT portion and the capacitor forming portion of the substrate, respectively, over the gate insulating layer; Forming an interlayer insulating film on the substrate on which the gate electrode and the third sustain electrode are formed; Forming a driving voltage line on the interlayer insulating film, the driving voltage line including a source / drain electrode and a fourth sustain electrode on a TFT portion and a capacitor forming portion of the substrate, respectively; And forming a protective layer on a substrate on which a driving voltage line including the source / drain electrode and the fourth sustain electrode is formed, wherein the first, second, third, and fourth sustain electrodes are formed to overlap each other The first sustain electrode and the third sustain electrode are connected to each other, and the second sustain electrode and the fourth sustain electrode are connected to each other to form a capacitor having a triple parallel structure.

In this case, the light shielding film is formed so as to cover the active layer above the light shielding film.

Wherein the active layer is formed of polycrystalline silicon and the second sustain electrode is formed of doped polycrystalline silicon.

The light shielding film and the first sustain electrode may be formed of a metal such as aluminum or aluminum alloy, a silver-based metal such as silver or silver alloy, a copper-based metal such as copper or copper alloy, a molybdenum-based metal such as molybdenum or molybdenum alloy, chromium, tantalum, titanium Of the opaque conductive material.

And the first sustain electrode is electrically connected to the third sustain electrode on the first contact hole through the first contact hole.

And the light blocking film is electrically connected to the driving voltage line through a connection hole.

As described above, in the organic light emitting diode display device according to the present invention and the method of manufacturing the same, the same conductive film as that of the light shielding film under the TFT portion is formed in the backlight emission type organic EL display device using the polycrystalline silicon thin film transistor, The capacity of the capacitor can be increased in the same pixel area. As a result, the aperture ratio and the resolution can be improved.

Further, the organic light emitting diode display device and the method of manufacturing the same according to the present invention can improve the reliability of the thin film transistor by preventing the coupling problem of the light blocking film by connecting the electrode of the capacitor to the upper conductive layer, Lt; / RTI >

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram for explaining the principle of light emission of a general organic light emitting diode display element. FIG.
FIG. 2 is an equivalent circuit diagram for one pixel in a general organic light emitting diode display device. FIG.
3 is a plan view schematically showing a pixel structure of an organic light emitting diode display device according to a first embodiment of the present invention.
FIG. 4 is a cross-sectional view taken along the line A-A 'of the organic light emitting diode display device according to the first embodiment of the present invention shown in FIG. 3; FIG.
5A to 5H are plan views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention shown in FIG.
6A to 6H are sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention shown in FIG.
7 is a plan view schematically showing a pixel structure of an organic light emitting diode display device according to a second embodiment of the present invention.
FIG. 8 is a cross-sectional view taken along the line B-B 'of FIG. 7 illustrating an organic light emitting diode display device according to a second embodiment of the present invention. FIG.
9A to 9H are plan views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention shown in FIG.
10A to 10H are sectional views sequentially showing a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention shown in FIG.

Hereinafter, exemplary embodiments of an organic light emitting diode display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

3 is a plan view schematically showing a pixel structure of an organic light emitting diode display device according to a first embodiment of the present invention.

Although FIG. 3 illustrates a 2T1C sub-pixel including two transistors and one capacitor, the present invention is not limited thereto, and the present invention can be applied to a number of transistors and capacitors, It is applicable regardless.

FIG. 4 is a cross-sectional view of the organic light emitting diode display device according to the first embodiment of the present invention shown in FIG. 3, taken along line A-A ' And a capacitor forming portion.

3 and 4 illustrate a P-type thin film transistor as an example, but the present invention is not limited thereto, and an N-type thin film transistor may be used.

As shown in the figure, the organic light emitting diode display device according to the first embodiment of the present invention includes a buffer layer 115a formed on a substrate 110 made of an insulating material such as transparent glass or plastic, The first active layer 124 and the second active layer 124a are formed.

As described above, the first embodiment of the present invention is characterized in that the first active layer 124 and the second active layer 124a are made of polycrystalline silicon. In this case, the characteristics of the TFT are affected by external light A light shielding layer 105 or 105a is formed under the channel region.

That is, in the first embodiment of the present invention, the first active layer 124 and the second active layer 124a are formed under the first active layer 124 and the second active layer 124a formed in the TFT portion And a light blocking film (105, 105a) is formed so as to cover the light blocking film (105, 105a).

At this time, a first storage electrode 106 and a second storage electrode 125 are formed on the capacitor forming portion using the light blocking films 105 and 105a and the active layers 124 and 124a formed on the TFT portion, .

The light shielding films 105 and 105a and the first sustain electrode 106 may be formed of an aluminum-based metal such as aluminum or an aluminum alloy, a metal such as silver or a silver alloy, Copper, or a copper alloy, a molybdenum-based metal such as molybdenum (Mo) or molybdenum alloy, or a low-resistance opaque conductive material such as chromium (Cr), tantalum (Ta), or titanium (Ti).

In addition, the first active layer 124 and the second active layer (124a), a gate insulating film (115b) made of a substrate 110 formed on the silicon nitride film (SiNx) or silicon oxide (SiO _2), such as including a is formed, and A gate line 116 including a first gate electrode 121 and a third sustain electrode 126 including a second gate electrode 121a are formed thereon.

At this time, the first gate electrode 121 and the second gate electrode 121a are located above the first active layer 124 and the second active layer 124a, respectively.

The gate line 116 transmits a gate signal and extends in the horizontal direction. Here, the gate line 116 includes an end portion (not shown) having a large area for connection to another layer or an external driving circuit (not shown), and the first gate electrode 121 is connected to the gate line 116 ). The gate line 116 may extend and be directly connected to the gate drive circuit when a gate drive circuit for generating a gate signal is integrated on the substrate 110. [

The third sustain electrode 126 is separated from the gate line 116 and overlaps the first sustain electrode 106 and the second sustain electrode 125 below the third sustain electrode 126.

An inter insulation layer made of a silicon nitride film or a silicon oxide film or the like is formed on the third sustain electrode 126 including the gate line 116 including the first gate electrode 121 and the second gate electrode 121a, A data line 117, a driving voltage line 119, first source / drain electrodes 122 and 123, and second source / drain electrodes 122a and 123a are formed thereon .

The data line 117 transmits a data signal and extends in the vertical direction to intersect the gate line 116 to define a pixel region. At this time, the data line 117 is connected to the first source electrode 122 extending toward the first gate electrode 121 and the end portion (not shown) having a large area for connection to another layer or an external driver circuit (not shown) . When the data driving circuit for generating the data signal is integrated on the substrate 110, the data line 117 may be extended and directly connected to the data driving circuit.

The driving voltage line 119 transmits a driving voltage and extends in the longitudinal direction to intersect the gate line 116. At this time, the driving voltage line 119 includes a second source electrode 122a extending toward the second gate electrode 121a. A portion of the driving voltage line 119 extends to the capacitor forming portion to constitute a fourth sustaining electrode 127. The fourth sustaining electrode 127 is connected to the first sustaining electrode 106 and the second sustaining electrode 125 And the third sustain electrodes 126, and can be connected to each other. The first sustain electrode 106 and the third sustain electrode 126 are connected to each other through the first contact hole 140a while the second sustain electrode 125 and the fourth sustain electrode 127 are connected to each other, May be connected to each other through the fifth contact hole 140e.

The first source electrode 122 and the first drain electrode 123 face each other with respect to the first gate electrode 121 and the second source electrode 122a and the second drain electrode 123a face each other. Substantially face each other around the second gate electrode 121a.

The first source / drain electrodes 122 and 123 are electrically connected to a source / drain region of the first active layer 124 through a second contact hole 140b. The first source / The first and second contact holes 122a and 123a are electrically connected to the source / drain region of the second active layer 124a through the third contact hole 140c.

The first drain electrode 123 is electrically connected to the second gate electrode 121a through a fourth contact hole 140d formed in the interlayer insulating layer 115c.

The substrate 110 having the data line 117, the driving voltage line 119, the fourth sustain electrode 127, the first source / drain electrodes 122 and 123, and the second source / drain electrodes 122a and 123a is formed. A protective film 115d made of a silicon nitride film, a silicon oxide film or the like is formed.

At this time, a sixth contact hole 140f exposing the second source electrode 122a is formed in the protection film 115d.

A pixel electrode 118 is formed on the passivation layer 115d. The pixel electrode 118 may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) or a reflective conductive material such as aluminum, silver or an alloy thereof. Lt; / RTI >

At this time, the pixel electrode 118, which is an anode, is electrically connected to the second source electrode 122a through the sixth contact hole 140f.

A partition (not shown) is formed on the substrate 110 on which the pixel electrode 118 is formed. At this time, the barrier ribs surround the edges of the pixel electrode 118 to define openings and are made of an organic insulating material or an inorganic insulating material. The partition may also be made of a photosensitizer containing a black pigment, in which case the partition serves as a light shielding member.

An organic light emitting layer (not shown) is formed on the substrate 110 on which the barrier ribs are formed.

At this time, the organic light emitting layer may have a multi-layer structure including an auxiliary layer for improving the light emitting efficiency of the light emitting layer in addition to the light emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

A common electrode 128, which is a cathode, is formed on the organic light emitting layer. At this time, the common electrode 128 receives a common voltage and is formed of a reflective conductive material including calcium (Ca), barium (Ba), magnesium (Mg), aluminum, silver, etc. or a transparent conductive material such as ITO or IZO Lt; / RTI >

In the organic light emitting diode display device having such a structure, a first gate electrode 121 connected to the gate line 116, a first source electrode 122 connected to the data line 117, The electrode 123 together with the first active layer 124 constitute a switching thin film transistor (switching TFT). A second gate electrode 121a connected to the first drain electrode 123 and a second source electrode 122a connected to the driving voltage line 119 are connected to the pixel electrode 118, And the second drain electrode 123a together with the second active layer 124a constitute a driving TFT.

The pixel electrode 118, the organic light emitting layer, and the common electrode 128 constitute an organic light emitting diode, and the first sustain electrode 106, the second sustain electrode 125, 126 and the fourth sustain electrode 127 constitute a capacitor having a parallel structure.

As described above, in the first embodiment of the present invention, the light shielding films 105 and 105a are formed under the TFT portions to shield external light, and the conductive films of the light shielding films 105 and 105a are used to form a capacitor A triple parallel structure capacitor can be constructed by using the first sustain electrode 106 as an electrode, which results in an increase in the capacitance of the capacitor compared to a conventional double parallel structure capacitor. Accordingly, the area of the capacitor, that is, the area of the capacitor forming portion, can be reduced with respect to the same pixel area, and the aperture ratio can be improved.

Hereinafter, a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention will be described in detail with reference to the drawings.

5A to 5H are plan views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention shown in FIG.

6A to 6H are cross-sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention shown in FIG. 4. Referring to FIG. 6A, a TFT portion including a switching thin film transistor And shows a manufacturing method of the capacitor forming portion.

As shown in FIGS. 5A and 6A, the light shielding films 105 and 105a and the first sustain electrode 106 are formed on a substrate 110 made of an insulating material such as transparent glass or plastic.

At this time, the light shielding films 105 and 105a and the first sustain electrode 106 are formed by selectively depositing a first conductive film on the entire surface of the substrate 110 and then patterning the same through a photolithography process.

Here, the first conductive film may be formed of an aluminum-based metal such as aluminum or an aluminum alloy, a silver or silver alloy, a series metal, a copper-based metal such as copper or a copper alloy, a molybdenum-based metal such as molybdenum or molybdenum alloy, chromium, tantalum, The same low resistance opaque conductive material can be used.

The first sustain electrodes 106 may be formed in a rectangular shape, but the present invention is not limited thereto.

5B and 6B, a buffer layer 115a and a silicon thin film (not shown) are formed on the substrate 110 on which the light shielding films 105 and 105a and the first sustain electrode 106 are formed, (Not shown).

At this time, the buffer layer 115a serves to prevent impurities such as sodium (Na) present in the substrate 110 from penetrating into the upper layer during the process.

The silicon thin film may be formed of amorphous silicon or polycrystalline silicon. In the first embodiment, a thin film transistor is formed using polycrystalline silicon, for example. Here, the polycrystalline silicon may be formed by depositing amorphous silicon on the substrate 110 using various crystallization methods.

First, amorphous silicon can be deposited by various methods. Typical methods for depositing the amorphous silicon include a low pressure chemical vapor deposition (LPCVD) method and a plasma enhanced chemical vapor deposition (CVD) method. PECVD) method.

As a method of crystallizing the amorphous silicon, there are a solid phase crystallization (SPC) method and an excimer laser annealing (ELA) method using amorphous silicon in a high temperature furnace.

Although the excimer laser annealing method using a pulse type laser is mainly used as the laser crystallization method, a sequential lateral solidification (SLS) method in which grains are grown in a horizontal direction to improve crystallization characteristics It can also be used.

Thereafter, the silicon thin film is selectively removed through a photolithography process to form the first active layer 124 and the second active layer 124a made of the polycrystalline silicon.

At this time, a second sustain electrode 125 is formed on the capacitor forming portion where the first sustain electrode 106 is formed to overlap with the first sustain electrode 106. At this time, the second sustain electrode 125 is doped to polycrystalline silicon to form an electrode of a capacitor.

5C and 6C, a silicon nitride film or a silicon oxide film (not shown) is formed on the substrate 110 on which the first active layer 124, the second active layer 124a and the second sustain electrode 125 are formed, And then selectively patterned through a photolithography process to form a first contact hole 140a exposing a part of the first sustain electrode 106. The first contact hole 140a is formed to expose a part of the first sustain electrode 106. [

5D and 6D, a gate line 116 including a first gate electrode 121 and a third sustain electrode 121 including a second gate electrode 121a are formed on the gate insulating layer 115b, (126).

At this time, the third sustain electrode 126 including the gate line 116 including the first gate electrode 121 and the second gate electrode 121a may be formed by depositing a second conductive film on the entire surface of the substrate 110 And then selectively patterned through a photolithography process.

Here, the second conductive film may be formed of an aluminum-based metal such as aluminum or an aluminum alloy, a silver or silver alloy, a series metal, a copper-based metal such as copper or a copper alloy, a molybdenum-based metal such as a molybdenum or molybdenum alloy, chromium, tantalum, The same low resistance opaque conductive material can be used. However, they may have a multilayer structure including two conductive films having different physical properties. One of the conductive films may be made of a metal having a low resistivity, for example, an aluminum-based metal, a silver-based metal, a copper-based metal, or the like so as to reduce signal delay or voltage drop. Alternatively, the other conductive film may be made of a material having excellent physical, chemical and electrical contact properties with other materials, particularly ITO and IZO, such as molybdenum-based metals, chromium, titanium, tantalum, and the like.

The side surface of the third sustain electrode 126 including the gate electrode 116 including the first gate electrode 121 and the second gate electrode 121a may be inclined with respect to the surface of the substrate 110, The inclination angle is preferably from about 30 DEG to about 80 DEG.

The first gate electrode 121 and the second gate electrode 121a are located above the first active layer 124 and the second active layer 124a, respectively.

As described above, the gate line 116 transmits the gate signal and extends in the horizontal direction. The gate line 116 includes a wide end portion (not shown) for connection to another layer or an external driving circuit (not shown), and the first gate electrode 121 includes a gate line 116, . The gate line 116 may extend and be directly connected to the gate drive circuit when a gate drive circuit for generating a gate signal is integrated on the substrate 110. [

The third sustain electrode 126 is formed to overlap with the first sustain electrode 106 and the second sustain electrode 125 and is electrically connected to the first sustain electrode 106 As shown in FIG.

Next, as shown in FIGS. 5E and 6E, a third sustain electrode 126 including the gate line 116 including the first gate electrode 121 and the second gate electrode 121a is formed An interlayer insulating film 115c made of a silicon nitride film, a silicon oxide film or the like is formed on the entire surface of the substrate 110 and then the interlayer insulating film 115c and the gate insulating film 115b are selectively patterned through a photolithography process, A second contact hole 140b exposing the source / drain region of the layer 124 and a third contact hole 140c exposing the source / drain region of the second active layer 124a are formed. A fourth contact hole 140d exposing the second gate electrode 121a and a fifth contact hole 140e exposing the second sustain electrode 125 are formed through the photolithography process.

5F and 6F, a third conductive film is formed on the entire surface of the substrate 110 on which the interlayer insulating film 115c is formed, and then the third conductive film is selectively removed through a photolithography process, The data line 117, the driving voltage line 119, the fourth sustain electrode 127, the first source / drain electrodes 122 and 123, and the second source / drain electrodes 122a and 123a, which are the third conductive films, .

The first source / drain electrodes 122 and 123 are electrically connected to a source / drain region of the first active layer 124 through the second contact hole 140b, and the second source / The electrodes 122a and 123a are electrically connected to the source / drain region of the second active layer 124a through the third contact hole 140c.

The first drain electrode 123 is electrically connected to the second gate electrode 121a through the fourth contact hole 140d while the fourth sustain electrode 127 is electrically connected to the fifth contact hole And is electrically connected to the second sustain electrode 125 through the second sustain electrode 140e.

As the third conductive film, an aluminum-based metal such as aluminum or an aluminum alloy, a silver-based alloy such as a silver-based alloy, a copper-based metal such as copper or a copper alloy, a molybdenum-based metal such as a molybdenum or a molybdenum alloy, or a metal such as chromium, tantalum, A resistive opaque conductive material can be used. However, they may have a multilayer structure including two conductive films having different physical properties. One of the conductive films may be made of a metal having a low resistivity, for example, an aluminum-based metal, a silver-based metal, a copper-based metal, or the like so as to reduce signal delay or voltage drop. Alternatively, the other conductive film may be made of a material having excellent physical, chemical and electrical contact properties with other materials, particularly ITO and IZO, such as molybdenum-based metals, chromium, titanium, tantalum, and the like.

The data line 117, the driving voltage line 119, the fourth sustain electrode 127, the first source / drain electrodes 122 and 123, and the second source / drain electrodes 122a and 123a, (110) plane at an inclination angle of about 30 DEG to 80 DEG.

As described above, the data line 117 transmits a data signal and extends in the longitudinal direction to intersect the gate line 116. At this time, the data line 117 is connected to the first source electrode 122 extending toward the first gate electrode 121 and the end portion (not shown) having a large area for connection to another layer or an external driver circuit (not shown) . When the data driving circuit for generating the data signal is integrated on the substrate 110, the data line 117 may be extended and directly connected to the data driving circuit.

The driving voltage line 119 transmits a driving voltage and extends in the longitudinal direction to intersect the gate line 116. At this time, the driving voltage line 119 includes a second source electrode 122a extending toward the second gate electrode 121a. The fourth sustain electrode 127 connected to the driving voltage line 119 may overlap with the third sustain electrode 126 below the fourth sustain electrode 127.

The first source electrode 122 and the first drain electrode 123 face each other with respect to the first gate electrode 121 and the second source electrode 122a and the second drain electrode 123a face each other. Substantially face each other around the second gate electrode 121a.

Next, as shown in FIGS. 5G and 6G, the data line 117, the driving voltage line 119, the fourth sustain electrode 127, the first source / drain electrodes 122 and 123, A protective film 115d made of a silicon nitride film, a silicon oxide film or the like is formed on the entire surface of the substrate 110 on which the source / drain electrodes 122a and 123a are formed.

Then, the protective film 115d is selectively removed through a photolithography process to form a sixth contact hole 140f exposing the second source electrode 122a.

5H and 6H, a fourth conductive layer is deposited on the entire surface of the substrate 110 on which the protective layer 115d is formed, and then the fourth conductive layer is selectively removed through a photolithography process, And the pixel electrode 118 made of the fourth conductive film is formed.

At this time, the fourth conductive layer may be formed of a transparent conductive material such as ITO or IZO.

The pixel electrode 118, which is an anode, is electrically connected to the second source electrode 122a through the sixth contact hole 140f.

Next, although not shown, a partition wall separating the sub-pixels is formed on the substrate 110 on which the pixel electrode 118 is formed.

At this time, the barrier ribs surround the edges of the pixel electrode 118 to define openings, and are made of an organic insulating material or an inorganic insulating material. The partition may also be made of a photosensitizer containing a black pigment, in which case the partition serves as a light shielding member.

An organic light emitting layer is formed on the substrate 110 on which the barrier ribs are formed.

As described above, the organic light emitting layer may have a multilayer structure including a light emitting layer and a sub-layer for improving the light emitting efficiency of the light emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

Then, a common electrode 128, which is a cathode, is formed on the organic light emitting layer.

The common electrode 128 may be formed of a reflective conductive material including calcium, barium, magnesium, aluminum, and silver, or a transparent conductive material such as ITO or IZO.

Although the organic light emitting diode display device according to the first embodiment of the present invention thus manufactured is illustrated as floating when the light shielding film is not connected to any wiring, the present invention is not limited thereto . For example, the light blocking film may be connected to a driving voltage line in a constant voltage state. In this case, the coupling effect introduced from the outside may be minimized to stabilize the TFT. This may be accomplished through the following second embodiment of the present invention Will be described in detail.

7 is a plan view schematically showing a pixel structure of an organic light emitting diode display device according to a second embodiment of the present invention.

7, a 2T1C sub-pixel including two transistors and one capacitor is shown as an example. However, the present invention is not limited to the 2T1C sub-pixel including two transistors and one capacitor, And the layout structure.

8 is a cross-sectional view of the organic light emitting diode display device according to the first embodiment of the present invention shown in FIG. 7, taken along the line B-B ', in which the organic light emitting diode display device And a capacitor forming portion.

7 and FIG. 8 illustrate a P-type thin film transistor as an example, but the present invention is not limited thereto, and an N-type thin film transistor may be used as described above.

As shown in the drawing, the organic light emitting diode display device according to the second embodiment of the present invention includes a buffer layer 215a formed on a substrate 210 made of an insulating material such as transparent glass or plastic, A first active layer 224 and a second active layer 224a are formed.

In the second embodiment of the present invention, the first active layer 224 and the second active layer 224a are made of polycrystalline silicon. In this case, The light blocking films 205 and 205a are formed under the channel region in order to prevent the characteristics of the TFT from being affected by the light.

That is, in the second embodiment of the present invention, the first active layer 224 and the second active layer 224a are formed under the first active layer 224 and the second active layer 224a formed in the TFT portion And a light blocking film (205, 205a) is formed to cover the light blocking film (205, 205a). In particular, the light blocking films 205 and 250a according to the second embodiment of the present invention are connected to each other, and are connected to the driving voltage line 219 through the connection holes 240, Can be prevented.

At this time, the first sustain electrode 206 and the second sustain electrode 225 are formed in the capacitor forming portion using the light blocking films 205 and 205a and the active layers 224 and 224a formed in the TFT portion, respectively .

The light-shielding films 205 and 205a and the first sustain electrode 206 may be formed of a metal such as aluminum or aluminum alloy, a metal such as silver or silver alloy, a copper-based metal such as copper or a copper alloy, a molybdenum or molybdenum alloy such as molybdenum or molybdenum alloy, Resistant metal, chromium, tantalum, titanium, and the like.

A gate insulating layer 215b made of a silicon nitride layer or a silicon oxide layer is formed on the substrate 210 including the first active layer 224 and the second active layer 224a. A gate line 216 including the first gate electrode 221 and a third sustain electrode 226 including the second gate electrode 221a are formed.

At this time, the first gate electrode 221 and the second gate electrode 221a are located above the first active layer 224 and the second active layer 224a, respectively.

The gate line 216 transmits a gate signal and extends in the horizontal direction. The gate line 216 includes an end portion (not shown) having a large area for connection to another layer or an external driving circuit (not shown), and the first gate electrode 221 is connected to the gate line 216 ). The gate line 216 may extend and be connected directly to the gate drive circuit if the gate drive circuit for generating the gate signal is integrated on the substrate 210. [

The third sustain electrode 226 is separated from the gate line 216 and overlaps the first sustain electrode 206 and the second sustain electrode 225 under the third sustain electrode 226.

An interlayer insulating film 215c made of a silicon nitride film or a silicon oxide film is formed on the third sustain electrode 226 including the gate line 216 including the first gate electrode 221 and the second gate electrode 221a And a data line 217, a driving voltage line 219, first source / drain electrodes 222 and 223 and second source / drain electrodes 222a and 223a are formed thereon.

The data line 217 transmits a data signal and extends in the vertical direction to intersect the gate line 216 to define a pixel region. At this time, the data line 217 is connected to the first source electrode 222 extending toward the first gate electrode 221 and the end portion (not shown) having a large area for connection to another layer or an external driver circuit (not shown) . When the data driving circuit for generating the data signal is integrated on the substrate 210, the data line 217 may extend and be directly connected to the data driving circuit.

The driving voltage line 219 transmits a driving voltage and extends in the longitudinal direction to intersect the gate line 216. At this time, the driving voltage line 219 includes a second source electrode 222a extending toward the second gate electrode 221a. A portion of the driving voltage line 219 extends to the capacitor forming portion to constitute a fourth sustaining electrode 227 and the fourth sustaining electrode 227 is connected to the first sustaining electrode 206 and the second sustaining electrode 225 And the third sustain electrode 226, and may be connected to each other. The first sustain electrode 206 and the third sustain electrode 226 are connected to each other through the first contact hole 240a while the second sustain electrode 225 and the fourth sustain electrode 227 are connected to each other, May be connected to each other through the fifth contact hole 240e.

The first source electrode 222 and the first drain electrode 223 face each other with respect to the first gate electrode 221 and the second source electrode 222a and the second drain electrode 223a face each other. Substantially face each other around the second gate electrode 221a.

The first source / drain electrodes 222 and 223 are electrically connected to a source / drain region of the first active layer 224 through a second contact hole 240b. The first source / Drain regions 222a and 223a are electrically connected to the source / drain region of the second active layer 224a through the third contact hole 240c.

The first drain electrode 223 is electrically connected to the second gate electrode 221a through a fourth contact hole 240d formed in the interlayer insulating layer 215c.

The substrate 210 on which the data line 217, the driving voltage line 219, the fourth sustain electrode 227, the first source / drain electrodes 222 and 223 and the second source / drain electrodes 222a and 223a are formed A protective film 215d made of a silicon nitride film, a silicon oxide film or the like is formed.

At this time, a sixth contact hole 240f exposing the second source electrode 222a is formed in the protection film 215d.

A pixel electrode 218 is formed on the passivation layer 215d. The pixel electrode 218 may be formed of a transparent conductive material such as ITO or IZO, or a reflective conductive material such as aluminum, silver or an alloy thereof.

At this time, the pixel electrode 218, which is an anode, is electrically connected to the second source electrode 222a through the sixth contact hole 240f.

A barrier rib (not shown) is formed on the substrate 210 on which the pixel electrode 218 is formed. The barrier ribs may be made of an organic insulating material or an inorganic insulating material by surrounding the edge of the pixel electrode 218 such that the barrier ribs may surround the edge of the pixel electrode 218. The barrier rib may also be made of a photosensitive material containing a black pigment, The partition wall serves as a light shielding member.

An organic light emitting layer (not shown) is formed on the substrate 210 on which the barrier ribs are formed.

At this time, the organic light emitting layer may have a multilayer structure including a light emitting layer and a sub-layer for improving the light emitting efficiency of the light emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

A common electrode 228, which is a cathode, is formed on the organic light emitting layer 230. The common electrode 228 may receive a common voltage and may include a reflective conductive material including calcium, barium, magnesium, aluminum, and silver, or a transparent conductive material such as ITO or IZO.

In the organic light emitting diode display device thus constructed, a first gate electrode 221 connected to the gate line 216, a first source electrode 222 connected to the data line 217, The electrode 223 together with the first active layer 224 constitute a switching thin film transistor. A second gate electrode 221a connected to the first drain electrode 223 and a second source electrode 222a connected to the driving voltage line 219 are connected to the pixel electrode 218, The second drain electrode 223a together with the second active layer 224a constitute a driving thin film transistor.

The pixel electrode 218, the organic light emitting layer, and the common electrode 228 constitute an organic light emitting diode, and the first sustain electrode 206, the second sustain electrode 225, and the third sustain electrode 226 and the fourth sustain electrode 227 constitute a capacitor having a parallel structure.

The second embodiment of the present invention is similar to the first embodiment of the present invention in that a light blocking film 205 or 205a is formed under the TFT section in order to shield external light and the light blocking film 205 or 205a ) Is used as the first sustain electrode 206, which is an electrode of the capacitor, in the capacitor forming portion, thereby making it possible to construct a capacitor of a triple parallel structure. This is because the capacitor capacity increases as compared with the conventional double parallel structure capacitor Results will be obtained. Accordingly, the area of the capacitor, that is, the area of the capacitor forming portion, can be reduced with respect to the same pixel area, and the aperture ratio can be improved.

In addition, the second embodiment of the present invention can connect the light blocking films 205 and 205a to the driving voltage line 219 in a constant voltage state. In this case, the coupling effect introduced from the outside can be minimized, You can import it.

That is, it is possible to hold the light blocking films 205 and 205a in a floating state at a specific voltage, thereby preventing a coupling problem of the light blocking films 205 and 205a due to an external variation signal. Since the coupling problem can be prevented in this way, the light blocking films 205 and 205a can be formed to have a larger size than the channel region, and an align margin with the active layers 224 and 224a above There is an advantage to be able to take it big.

Hereinafter, a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention will be described in detail with reference to the drawings.

9A to 9H are plan views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention shown in FIG.

FIGS. 10A to 10H are cross-sectional views sequentially illustrating a method for manufacturing an organic light emitting diode display device according to a second embodiment of the present invention shown in FIG. 8. Referring to FIGS. 10A to 10H, And shows a manufacturing method of the capacitor forming portion.

The light shielding films 205 and 205a and the first sustain electrode 206 are formed on a substrate 210 made of an insulating material such as transparent glass or plastic, as shown in FIGS. 9A and 10A.

At this time, the light shielding films 205 and 205a and the first sustain electrode 206 are formed by selectively depositing a first conductive film on the entire surface of the substrate 210 and then performing a photolithography process.

Here, the first conductive film may be formed of an aluminum-based metal such as aluminum or an aluminum alloy, a silver or silver alloy, a series metal, a copper-based metal such as copper or a copper alloy, a molybdenum-based metal such as molybdenum or molybdenum alloy, chromium, tantalum, The same low resistance opaque conductive material can be used.

At this time, the light blocking films 205 and 250a according to the second embodiment of the present invention may be connected to each other.

The first sustain electrodes 206 may be formed in a rectangular shape, but the present invention is not limited thereto.

Next, as shown in FIGS. 9B and 10B, a buffer film 215a and a silicon thin film (not shown) are formed on the substrate 210 on which the light shielding films 205 and 205a and the first sustain electrode 206 are formed .

The silicon thin film may be formed of amorphous silicon or polycrystalline silicon. In the second embodiment, a thin film transistor is formed using polycrystalline silicon, for example.

Thereafter, the silicon thin film is selectively removed through a photolithography process to form the first active layer 224 and the second active layer 224a made of the polycrystalline silicon.

At this time, a second sustain electrode 225 is formed on the capacitor forming portion where the first sustain electrode 206 is formed to overlap with the first sustain electrode 206. At this time, the second sustain electrode 225 is doped to polycrystalline silicon to form an electrode of the capacitor.

9C and 10C, a silicon nitride film or a silicon oxide film 210 is formed on the substrate 210 on which the first active layer 224, the second active layer 224a, and the second sustain electrode 225 are formed, A first contact hole 240a exposing a part of the first sustain electrode 206 is formed by selectively patterning through a photolithography process.

9D and 10D, a gate line 216 and a second gate electrode 221a including a first gate electrode 221 are formed on a substrate 210 on which the gate insulating layer 215b is formed, The third sustain electrode 226 is formed.

The third sustain electrode 226 including the gate line 216 including the first gate electrode 221 and the second gate electrode 221a may be formed by depositing a second conductive film on the entire surface of the substrate 210 And then selectively patterned through a photolithography process.

Here, the second conductive film may be formed of an aluminum-based metal such as aluminum or an aluminum alloy, a silver or silver alloy, a series metal, a copper-based metal such as copper or a copper alloy, a molybdenum-based metal such as a molybdenum or molybdenum alloy, chromium, tantalum, The same low resistance opaque conductive material can be used. However, they may have a multilayer structure including two conductive films having different physical properties. One of the conductive films may be made of a metal having a low resistivity, for example, an aluminum-based metal, a silver-based metal, a copper-based metal, or the like so as to reduce signal delay or voltage drop. Alternatively, the other conductive film may be made of a material having excellent physical, chemical and electrical contact properties with other materials, particularly ITO and IZO, such as molybdenum-based metals, chromium, titanium, tantalum, and the like.

The side surfaces of the third sustain electrode 226 including the gate line 216 including the first gate electrode 221 and the second gate electrode 221a may be inclined with respect to the surface of the substrate 210, The inclination angle is preferably from about 30 DEG to about 80 DEG.

The first gate electrode 221 and the second gate electrode 221a are located above the first active layer 224 and the second active layer 224a, respectively.

As described above, the gate line 216 transmits the gate signal and extends in the horizontal direction. The gate line 216 includes an end portion (not shown) having a large area for connection with another layer or an external driving circuit (not shown), and the first gate electrode 221 includes the gate line 216, . The gate line 216 may extend and be connected directly to the gate drive circuit if the gate drive circuit for generating the gate signal is integrated on the substrate 210. [

The third sustain electrode 226 is formed to overlap with the first sustain electrode 206 and the second sustain electrode 225 and the first sustain electrode 206 As shown in FIG.

Next, as shown in FIGS. 9E and 10E, a third sustain electrode 226 including a gate line 216 including the first gate electrode 221 and a second gate electrode 221a is formed An interlayer insulating film 215c made of a silicon nitride film, a silicon oxide film or the like is formed on the entire surface of the substrate 210, and then the interlayer insulating film 215c and the gate insulating film 215b are selectively patterned through a photolithography process, A second contact hole 240b exposing the source / drain region of the layer 224 and a third contact hole 240c exposing the source / drain region of the second active layer 224a are formed. A fourth contact hole 240d exposing the second gate electrode 221a through the photolithography process, a fifth contact hole 240e exposing the second sustain electrode 225, 205, and 205a are formed.

9F and 10F, a third conductive film is formed on the entire surface of the substrate 210 on which the interlayer insulating film 215c is formed, and then the third conductive film is selectively removed through a photolithography process, The data line 217, the driving voltage line 219, the fourth sustain electrode 227, the first source / drain electrodes 222 and 223, and the second source / drain electrodes 222a and 223a, .

The first source / drain electrodes 222 and 223 are electrically connected to a source / drain region of the first active layer 224 through the second contact hole 240b, and the second source / The electrodes 222a and 223a are electrically connected to the source / drain region of the second active layer 224a through the third contact hole 240c.

The first drain electrode 223 is electrically connected to the second gate electrode 221a through the fourth contact hole 240d while the fourth sustain electrode 227 is electrically connected to the fifth contact hole 240a, And electrically connected to the second sustain electrodes 225 through the first and second sustain electrodes 240e. The light blocking films 205 and 205a are electrically connected to the driving voltage line 219 through the connection hole 240. [

As the third conductive film, an aluminum-based metal such as aluminum or an aluminum alloy, a silver-based alloy such as a silver-based alloy, a copper-based metal such as copper or a copper alloy, a molybdenum-based metal such as a molybdenum or a molybdenum alloy, or a metal such as chromium, tantalum, A resistive opaque conductive material can be used. However, they may have a multilayer structure including two conductive films having different physical properties. One of the conductive films may be made of a metal having a low resistivity, for example, an aluminum-based metal, a silver-based metal, a copper-based metal, or the like so as to reduce signal delay or voltage drop. Alternatively, the other conductive film may be made of a material having excellent physical, chemical and electrical contact properties with other materials, particularly ITO and IZO, such as molybdenum-based metals, chromium, titanium, tantalum, and the like.

The data line 217, the driving voltage line 219, the fourth sustain electrode 227, the first source / drain electrodes 222 and 223 and the second source / It is preferable to incline at an inclination angle of about 30 DEG to 80 DEG with respect to the (210) plane.

As described above, the data line 217 carries a data signal and extends in the longitudinal direction and crosses the gate line 216. At this time, the data line 217 is connected to the first source electrode 222 extending toward the first gate electrode 221 and the end portion (not shown) having a large area for connection to another layer or an external driver circuit (not shown) . When the data driving circuit for generating the data signal is integrated on the substrate 210, the data line 217 may extend and be directly connected to the data driving circuit.

The driving voltage line 219 transmits a driving voltage and extends in the longitudinal direction to intersect the gate line 216. At this time, the driving voltage line 219 includes a second source electrode 222a extending toward the second gate electrode 221a. The fourth sustain electrode 227 connected to the driving voltage line 219 may overlap with the third sustain electrode 226 below the fourth sustain electrode 227.

The first source electrode 222 and the first drain electrode 223 face each other with respect to the first gate electrode 221 and the second source electrode 222a and the second drain electrode 223a face each other. Substantially face each other around the second gate electrode 221a.

Next, as shown in FIGS. 9G and 10G, the data line 217, the driving voltage line 219, the fourth sustain electrode 227, the first source / drain electrodes 222 and 223, A protective film 215d made of a silicon nitride film or a silicon oxide film is formed on the entire surface of the substrate 210 on which the source / drain electrodes 222a and 223a are formed.

Then, the protective film 215d is selectively removed through a photolithography process to form a sixth contact hole 240f exposing the second source electrode 222a.

9H and 10H, a fourth conductive layer is deposited on the entire surface of the substrate 210 on which the protective layer 215d is formed, and then the fourth conductive layer is selectively removed through a photolithography process, And a pixel electrode 218 made of a conductive film is formed.

At this time, the fourth conductive layer may be formed of a transparent conductive material such as ITO or IZO.

The pixel electrode 218, which is an anode, is electrically connected to the second source electrode 222a through the sixth contact hole 240f.

Next, although not shown, a partition wall separating the sub-pixels is formed on the substrate 210 on which the pixel electrode 218 is formed.

At this time, the barrier ribs surround the edge of the pixel electrode 218 to define openings and are made of an organic insulating material or an inorganic insulating material. The partition may also be made of a photosensitizer containing a black pigment, in which case the partition serves as a light shielding member.

An organic light emitting layer is formed on the substrate 210 on which the barrier ribs are formed.

As described above, the organic light emitting layer may have a multilayer structure including a light emitting layer and a sub-layer for improving the light emitting efficiency of the light emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

Then, a common electrode 228, which is a cathode, is formed on the organic light emitting layer.

The common electrode 228 may receive a common voltage and may include a reflective conductive material including calcium, barium, magnesium, aluminum, and silver, or a transparent conductive material such as ITO or IZO.

While a great many are described in the foregoing description, it should be construed as an example of preferred embodiments rather than limiting the scope of the invention. Therefore, the invention should not be construed as limited to the embodiments described, but should be determined by equivalents to the appended claims and the claims.

105, 105a, 205, 205a: a light blocking film 106, 206:
110, 210: substrate 116, 216: gate line
117, 217: Data lines 118, 218:
119, 219: Driving voltage lines 121, 221, 121a, 221a:
122, 222, 122a, 222a: source electrodes 123, 223, 123a, 223a:
124, 224, 124a, 224a: active layer 125, 225: second sustain electrode
126, 226: third sustain electrodes 127, 227: fourth sustain electrode
128, 228: common electrode 130, 230:

Claims (12)

A substrate divided into a TFT portion and a capacitor forming portion;
A light shielding film and a first sustain electrode respectively formed on the TFT portion and the capacitor formation portion of the substrate;
A buffer layer formed on the substrate on which the light shielding film and the first sustain electrode are formed;
An active layer and a second sustain electrode formed on the buffer layer and formed on the TFT portion and the capacitor formation portion of the substrate, respectively;
A gate insulating film formed on the substrate on which the active layer and the second sustain electrode are formed;
A gate electrode and a third sustain electrode formed on the gate insulating film and formed in the TFT portion and the capacitor forming portion of the substrate, respectively;
An interlayer insulating film formed on the substrate on which the gate electrode and the third sustain electrode are formed;
A driving voltage line formed on the interlayer insulating film and including a source / drain electrode and a fourth sustain electrode respectively formed in the TFT portion and the capacitor forming portion of the substrate; And
And a protective layer formed on a substrate on which a driving voltage line including the source / drain electrode and the fourth sustain electrode is formed,
Wherein the first, second, third, and fourth sustain electrodes overlap each other, the first sustain electrode and the third sustain electrode are connected to each other, and the second sustain electrode and the fourth sustain electrode are connected to each other, Structure capacitor,
And the light blocking film is spaced apart from the first sustain electrode. The organic light emitting diode display device according to claim 1, wherein the light blocking film is formed so as to cover the active layer thereon. The organic light emitting diode display device according to claim 1, wherein the active layer is made of polycrystalline silicon and the second sustain electrode is made of doped polycrystalline silicon. The method of claim 1, wherein the light shielding film and the first sustain electrode are formed of a material selected from the group consisting of aluminum (Al), silver (Ag), copper (Cu), molybdenum (Mo), chromium (Cr), tantalum (Ta) Wherein the organic light emitting diode display device comprises at least one organic light emitting diode display device. The organic light emitting diode display device according to claim 1, wherein the first sustain electrode is electrically connected to the third sustain electrode on the first contact hole through the first contact hole. The organic light emitting diode display device according to claim 1, wherein the light blocking film is electrically connected to the driving voltage line through a connection hole. Providing a substrate separated by a TFT portion and a capacitor forming portion;
Forming a light shielding film and a first sustain electrode on the TFT portion and the capacitor forming portion of the substrate, respectively;
Forming a buffer layer on the substrate on which the light shielding film and the first sustain electrode are formed;
Forming an active layer and a second sustain electrode on the TFT portion and the capacitor forming portion of the substrate, respectively, on the buffer layer;
Forming a gate insulating film on the substrate on which the active layer and the second sustain electrode are formed;
Forming a gate electrode and a third sustain electrode on the TFT portion and the capacitor forming portion of the substrate, respectively, over the gate insulating layer;
Forming an interlayer insulating film on the substrate on which the gate electrode and the third sustain electrode are formed;
Forming a driving voltage line on the interlayer insulating film, the driving voltage line including a source / drain electrode and a fourth sustain electrode on a TFT portion and a capacitor forming portion of the substrate, respectively; And
Forming a protective film on a substrate on which a driving voltage line including the source / drain electrode and the fourth sustain electrode is formed,
The first, second, third, and fourth sustain electrodes are formed to overlap with each other, the first and third sustain electrodes are connected to each other, and the second and fourth sustain electrodes are connected to each other A triple parallel capacitor is constructed,
Wherein the light shielding film is spaced apart from the first sustain electrode. 8. The method according to claim 7, wherein the light blocking film is formed to cover the active layer on the upper part. 8. The method of claim 7, wherein the active layer is formed of polycrystalline silicon and the second sustain electrode is formed of doped polycrystalline silicon. 8. The method of claim 7, wherein the light shielding film and the first sustain electrode are formed of at least one of aluminum, silver, copper, molybdenum, chromium, tantalum, and titanium. The organic light emitting diode display device of claim 7, wherein the first sustain electrode is electrically connected to the third sustain electrode on the first contact hole through the first contact hole. 8. The method of claim 7, wherein the light blocking layer is electrically connected to the driving voltage line through a connection hole.

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