CN111682036B - 一种阵列基板、显示面板、显示装置及其制备方法 - Google Patents

一种阵列基板、显示面板、显示装置及其制备方法 Download PDF

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CN111682036B
CN111682036B CN202010757061.8A CN202010757061A CN111682036B CN 111682036 B CN111682036 B CN 111682036B CN 202010757061 A CN202010757061 A CN 202010757061A CN 111682036 B CN111682036 B CN 111682036B
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CN111682036A (zh
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崔容豪
玄丽燕
仇翠红
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract

本发明涉及显示领域，公开一种阵列基板、显示面板、显示装置及其制备方法，包括：衬底基板；形成于衬底基板一侧的挡光层，挡光层采用柔性材料制备；形成于挡光层背离衬底基板一侧的第一阻断层；形成于第一阻断层背离挡光层一侧的薄膜晶体管。上述阵列基板中，衬底基板、挡光层、第一阻断层以及薄膜晶体管依次层叠设置，工艺简单易操作，其中挡光层采用柔性材料制备，不容易因折弯等操作断裂，从而保证了其遮光性能，进而改善了TFT特性。

Description

一种阵列基板、显示面板、显示装置及其制备方法
技术领域
本发明涉及显示技术领域，特别涉及一种阵列基板、显示面板、显示装置及其制备方法。
背景技术
顶栅型Oxide(氧化物)TFT(Thin Film Transistor，薄膜晶体管)与ESL(EtchStop Layer，蚀刻阻挡层)TFT不同，它采用有源层上部设置栅极的结构，Oxide TFT会对光作出反应，导致TFT特性发生变化。
为改善这种情况，顶栅型Oxide TFT设置有遮光层，当应用于柔性OLED(OrganicLight-Emitting Diode，有机发光二极管)阵列基板时，可能会诱发因弯折等造成遮光层断裂等不良现象。因而，如何优化Oxide TFT的结构尤为重要。
发明内容
本发明公开了一种阵列基板、显示面板、显示装置及其制备方法，用于改善因弯折出现的遮光层断裂问题。
为达到上述目的，本发明提供以下技术方案：
一种阵列基板，包括：
衬底基板；
形成于所述衬底基板一侧的挡光层，所述挡光层采用柔性材料制备；
形成于所述挡光层背离所述衬底基板一侧的第一阻断层；
形成于所述第一阻断层背离所述挡光层一侧的薄膜晶体管。
上述阵列基板中，衬底基板、挡光层、第一阻断层以及薄膜晶体管依次层叠设置，工艺简单易操作，其中挡光层采用柔性材料制备，不容易因折弯等操作断裂，从而保证了其遮光性能，进而改善了TFT特性。
可选地，制备所述挡光层的材料包括纳米结晶质硅。
可选地，所述挡光层为整层结构。
可选地，所述阵列基板还包括：
位于所述衬底基板与所述挡光层之间的第二阻断层。
可选地，所述衬底基板为塑料基板。
一种显示面板，包括如上任一项所述的阵列基板。
一种显示装置，包括如上所述的显示面板。
一种阵列基板的制备方法，包括：
在衬底基板上沉积柔性材料制备的挡光层；
在所述挡光层上沉积第一阻断层；
在所述第一阻断层上形成薄膜晶体管。
可选地，制备所述挡光层的材料包括纳米结晶质硅。
可选地，所述在衬底基板上沉积挡光层之前，还包括：
在所述衬底基板上沉积第二阻断层。
附图说明
图1为本发明实施例提供的一种阵列基板的结构示意图；
图2为本发明实施例提供的一种阵列基板中挡光层反射率的示意图；
图3为现有技术与图1中结构TFT特性的对比图；
图4为本发明实施例提供的一种阵列基板的制备方法流程示意图；
图5a-5c为图1中结构的膜层制备示意。
图标：1-衬底基板；2-第二阻断层；3-挡光层；4-第一阻断层；5-薄膜晶体管；51-有源层；52-栅极绝缘层；53-栅极；54-源极；55-漏极。
具体实施方式
目前遮光层采用金属系列材料，但具有金属遮光层的阵列基板应用在柔性OLED显示面板上，考虑到金属的弯折特性，需要减小遮光层的尺寸，但仍需满足避免有源层暴露在光下的要求，但即使这样，由于金属遮光层不能完全去除，应用于柔性OLED显示面仍存在因弯折导致的金属遮光层断裂的现象，从而影响TFT特性。下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1所示，本发明实施例提供了一种阵列基板，包括：衬底基板1；形成于衬底基板1一侧的挡光层3，挡光层3采用柔性材料制备；形成于挡光层3背离衬底基板1一侧的第一阻断层4；形成于第一阻断层4背离挡光层3一侧的薄膜晶体管5。其中，薄膜晶体管5包括依次层叠于第一阻断层4背离衬底基板1一侧的有源层51、栅极绝缘层52、栅极53、源极54以及与源极54同层设置的漏极55。
上述阵列基板中，衬底基板1、挡光层3、第一阻断层4以及薄膜晶体管5依次层叠设置，工艺简单易操作，其中挡光层3采用柔性材料制备，不容易因折弯等操作断裂，从而保证了其遮光性能，进而改善了TFT特性。
为了确保Oxide TFT特性需要降低光的影响，在顶部发光结构上阳极金属能遮挡约90％的光，其它10％通过光的折射(两次以上)对TFT产生影响。
可选地，制备挡光层3的材料包括纳米结晶质硅。
需要说明的是，影响Oxide TFT的光波长为550nm(图2中虚线)以下的波长，图2中反映了挡光层3对不同波长的反射率，参考图2，纳米结晶质硅的挡光层3能阻断约40％(平均)以上的光即反射40％，吸收60％。对此，采用纳米晶质硅的挡光层3光的影响性是10％*40*40％，即约2％以下的光可能会对TFT产生影响，相比于现有技术中的金属遮光层光的影响性10％*90*90％，即8％以上的光可能会对TFT产生影响，纳米结晶质硅的挡光层3在阻断光线上更有优势。
可选地，挡光层3为整层结构。挡光层3采用整层结构相比于金属遮光层，节约了工艺步骤，例如金属遮光层的构图、刻蚀以及掩模版的剥除等。整个阵列基板的制作工艺更为简单。
可选地，阵列基板还包括：位于衬底基板1与挡光层3之间的第二阻断层2。
可选地，衬底基板1为塑料基板。
另外，为了实现高分辨率，TFT的尺寸必须变小，这种情况下很难确保Unif(均匀分布)特性，特别是使用金属遮光层的驱动TFT的特性降低，很难确保Unif特性，因此还可能发生Unif特性下降引起的斑点等不良现象。图3为现有技术与图1中结构TFT特性的对比图，参照图3，若TFT下部有金属遮光层，则后续工艺(高温气相沉积/热处理等)中金属遮光层起到加热器的作用，TFT特性会降低，很难构成短沟道TFT。本发明实施例提供的衬底基板1采用纳米晶质硅的挡光层3，TFT特性会升高，可适用于短沟道TFT，TFT面积变小，因此可制作高分辨率的OLED显示面板。
基于同样的发明构思，本发明实施例还提供了一种显示面板，包括上述任一种阵列基板。
基于同样的发明构思，本发明实施例还提供了一种显示装置，包括如上的显示面板。
基于同样的发明构思，如图4所示，本发明实施例还提供了一种阵列基板的制备方法，包括：
S101、在衬底基板1上沉积第二阻断层2；
S102、在衬底基板1上沉积柔性材料制备的挡光层3；
S103、在挡光层3上沉积第一阻断层4；
S104、在第一阻断层4上形成薄膜晶体管5。
需要说明的是，在S101之前，可以在玻璃基板上形成衬底基板1。
其中，在S102中，制备挡光层3的材料包括纳米结晶质硅。
参照图5a，在衬底基板1上沉积第二阻断层2；参照图5b，在衬底基板1上沉积柔性材料制备的挡光层3；参照图5c，在挡光层3上沉积第一阻断层4；继续参照图1中结构，在第一阻断层4上形成薄膜晶体管5。
综上，本发明实施例提供的阵列基板的制备工艺中，省去了金属遮光层的制作工艺，以及与金属遮光层配合的缓冲层制作工艺，同时可以减少TFT掩模版，进而简化工程。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (7)

1.一种阵列基板，其特征在于，包括：
衬底基板；
形成于所述衬底基板一侧的挡光层，所述挡光层采用柔性材料制备；
形成于所述挡光层背离所述衬底基板一侧的第一阻断层；
形成于所述第一阻断层背离所述挡光层一侧的薄膜晶体管，所述薄膜晶体管的有源层为氧化物半导体材料；其中：
制备所述挡光层的材料包括纳米结晶质硅；所述纳米结晶质硅的挡光层阻断40%以上的波长为550nm以下的光；所述挡光层为整层结构。
2.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括：
位于所述衬底基板与所述挡光层之间的第二阻断层。
3.根据权利要求1所述的阵列基板，其特征在于，所述衬底基板为塑料基板。
4.一种显示面板，其特征在于，包括如权利要求1-3任一项所述的阵列基板。
5.一种显示装置，其特征在于，包括如权利要求4所述的显示面板。
6.一种阵列基板的制备方法，其特征在于，包括：
在衬底基板上沉积柔性材料制备整层结构的挡光层；制备所述挡光层的材料包括纳米结晶质硅；所述纳米结晶质硅的挡光层阻断40%以上的波长为550nm以下的光；
在所述挡光层上沉积第一阻断层；
在所述第一阻断层上形成薄膜晶体管，所述薄膜晶体管的有源层为氧化物半导体材料。
7.根据权利要求6所述的制备方法，其特征在于，所述在衬底基板上沉积挡光层之前，还包括：
在所述衬底基板上沉积第二阻断层。
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