CN107863300A - 一种ltcc基板双面空腔制作方法 - Google Patents
一种ltcc基板双面空腔制作方法 Download PDFInfo
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- CN107863300A CN107863300A CN201711069032.7A CN201711069032A CN107863300A CN 107863300 A CN107863300 A CN 107863300A CN 201711069032 A CN201711069032 A CN 201711069032A CN 107863300 A CN107863300 A CN 107863300A
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- cavity
- ltcc substrate
- green
- ltcc
- plug
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
Abstract
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CN201711069032.7A CN107863300B (zh) | 2017-11-03 | 2017-11-03 | 一种ltcc基板双面空腔制作方法 |
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CN201711069032.7A CN107863300B (zh) | 2017-11-03 | 2017-11-03 | 一种ltcc基板双面空腔制作方法 |
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CN107863300A true CN107863300A (zh) | 2018-03-30 |
CN107863300B CN107863300B (zh) | 2019-11-05 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109285812A (zh) * | 2018-09-29 | 2019-01-29 | 西安微电子技术研究所 | 一种双面多台阶腔体的ltcc基板制造方法 |
CN109309060A (zh) * | 2018-11-29 | 2019-02-05 | 北京无线电测量研究所 | 双面腔体结构的ltcc基板的制作方法 |
CN112437559A (zh) * | 2020-11-16 | 2021-03-02 | 中国科学院空天信息创新研究院 | Ltcc基板双面腔体结构的叠压方法 |
CN112437542A (zh) * | 2020-11-16 | 2021-03-02 | 中国科学院空天信息创新研究院 | 多台阶腔体结构的ltcc基板制作方法及ltcc基板 |
CN114040599A (zh) * | 2021-11-30 | 2022-02-11 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种环形ltcc基板制作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5478420A (en) * | 1994-07-28 | 1995-12-26 | International Business Machines Corporation | Process for forming open-centered multilayer ceramic substrates |
US5683535A (en) * | 1996-07-25 | 1997-11-04 | Northrop Grumman Corporation | Method and apparatus of producing cavities in LTCC substrates |
US5759320A (en) * | 1997-04-13 | 1998-06-02 | International Business Machines Corporation | Method of forming cavity substrates using compressive pads |
US20020140135A1 (en) * | 2001-03-28 | 2002-10-03 | Hideyuki Harada | Multilayered ceramic substrate production method |
US20030100146A1 (en) * | 2001-11-22 | 2003-05-29 | Sumitomo Metal (Smi) Electronics Devices Inc. | Method of fabricating multilayer ceramic substrate |
CN103500737A (zh) * | 2013-10-24 | 2014-01-08 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种基于ltcc基板的耐过载一体化lcc封装 |
-
2017
- 2017-11-03 CN CN201711069032.7A patent/CN107863300B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5478420A (en) * | 1994-07-28 | 1995-12-26 | International Business Machines Corporation | Process for forming open-centered multilayer ceramic substrates |
US5683535A (en) * | 1996-07-25 | 1997-11-04 | Northrop Grumman Corporation | Method and apparatus of producing cavities in LTCC substrates |
US5759320A (en) * | 1997-04-13 | 1998-06-02 | International Business Machines Corporation | Method of forming cavity substrates using compressive pads |
US20020140135A1 (en) * | 2001-03-28 | 2002-10-03 | Hideyuki Harada | Multilayered ceramic substrate production method |
US20030100146A1 (en) * | 2001-11-22 | 2003-05-29 | Sumitomo Metal (Smi) Electronics Devices Inc. | Method of fabricating multilayer ceramic substrate |
CN103500737A (zh) * | 2013-10-24 | 2014-01-08 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种基于ltcc基板的耐过载一体化lcc封装 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109285812A (zh) * | 2018-09-29 | 2019-01-29 | 西安微电子技术研究所 | 一种双面多台阶腔体的ltcc基板制造方法 |
CN109309060A (zh) * | 2018-11-29 | 2019-02-05 | 北京无线电测量研究所 | 双面腔体结构的ltcc基板的制作方法 |
CN112437559A (zh) * | 2020-11-16 | 2021-03-02 | 中国科学院空天信息创新研究院 | Ltcc基板双面腔体结构的叠压方法 |
CN112437542A (zh) * | 2020-11-16 | 2021-03-02 | 中国科学院空天信息创新研究院 | 多台阶腔体结构的ltcc基板制作方法及ltcc基板 |
CN114040599A (zh) * | 2021-11-30 | 2022-02-11 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种环形ltcc基板制作方法 |
CN114040599B (zh) * | 2021-11-30 | 2024-03-29 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种环形ltcc基板制作方法 |
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CN107863300B (zh) | 2019-11-05 |
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Address after: 233040 No.10 Caiyuan Road, Bengbu City, Anhui Province Patentee after: Anhui North Microelectronics Research Institute Group Co.,Ltd. Address before: 233040 No.10 Caiyuan Road, Bengbu City, Anhui Province Patentee before: NORTH ELECTRON RESEARCH INSTITUTE ANHUI Co.,Ltd. |
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