CN107851603B - 基板载置方法、成膜方法、电子设备的制造方法 - Google Patents

基板载置方法、成膜方法、电子设备的制造方法 Download PDF

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Publication number
CN107851603B
CN107851603B CN201780002058.1A CN201780002058A CN107851603B CN 107851603 B CN107851603 B CN 107851603B CN 201780002058 A CN201780002058 A CN 201780002058A CN 107851603 B CN107851603 B CN 107851603B
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substrate
clamping
mounting
state
mask
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CN107851603A (zh
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石井博
铃木健太郎
鸟泻光太郎
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN201780002058.1A 2016-06-24 2017-06-22 基板载置方法、成膜方法、电子设备的制造方法 Active CN107851603B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2016125833 2016-06-24
JP2016125834 2016-06-24
JP2016-125834 2016-06-24
JP2016-125833 2016-06-24
JP2017101233 2017-05-22
JP2017-101233 2017-05-22
PCT/JP2017/023004 WO2017222009A1 (ja) 2016-06-24 2017-06-22 基板載置方法、成膜方法、電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN107851603A CN107851603A (zh) 2018-03-27
CN107851603B true CN107851603B (zh) 2021-11-23

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CN201780002058.1A Active CN107851603B (zh) 2016-06-24 2017-06-22 基板载置方法、成膜方法、电子设备的制造方法

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Country Link
JP (1) JP6351918B2 (ja)
KR (2) KR20210021140A (ja)
CN (1) CN107851603B (ja)
WO (1) WO2017222009A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102164588B1 (ko) 2014-12-10 2020-10-13 어플라이드 머티어리얼스, 인코포레이티드 프로세싱 챔버에서 기판을 마스킹하기 위한 마스크 어레인지먼트, 기판 상에 층을 증착하기 위한 장치, 및 프로세싱 챔버에서 기판을 마스킹하기 위한 마스크 어레인지먼트를 정렬하기 위한 방법
KR101979149B1 (ko) * 2018-04-27 2019-05-15 캐논 톡키 가부시키가이샤 얼라인먼트 방법, 이를 사용한 증착방법 및 전자디바이스 제조방법
CN108642452B (zh) * 2018-06-08 2020-07-03 芜湖市亿仑电子有限公司 一种电容器金属化薄膜加工真空镀膜机
KR102427823B1 (ko) * 2018-06-11 2022-07-29 캐논 톡키 가부시키가이샤 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
JP7170524B2 (ja) * 2018-12-14 2022-11-14 キヤノントッキ株式会社 基板載置方法、成膜方法、成膜装置、有機ｅｌパネルの製造システム
CN113490762A (zh) 2019-03-15 2021-10-08 应用材料公司 沉积掩模、及制造和使用沉积掩模的方法
US11538706B2 (en) 2019-05-24 2022-12-27 Applied Materials, Inc. System and method for aligning a mask with a substrate
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US10916464B1 (en) 2019-07-26 2021-02-09 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
CN211339668U (zh) * 2019-12-26 2020-08-25 昆山国显光电有限公司 夹持装置
JP2022083681A (ja) * 2020-11-25 2022-06-06 キヤノントッキ株式会社 アライメント装置、成膜装置、アライメント方法、成膜方法、および電子デバイスの製造方法
JP2022093003A (ja) * 2020-12-11 2022-06-23 キヤノントッキ株式会社 アライメント装置、成膜装置、アライメント方法、成膜方法及び電子デバイスの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW571144B (en) * 1999-12-09 2004-01-11 Hitachi Techno Eng Substrate assembling apparatus
CN101013274A (zh) * 2006-02-03 2007-08-08 佳能株式会社 掩模成膜方法及掩模成膜设备
TW201103995A (en) * 2009-03-18 2011-02-01 Ulvac Inc An alignment method and a deposition method
JP2013035611A (ja) * 2011-08-03 2013-02-21 Sekisui Chem Co Ltd 表面処理における基板移送装置及び方法
CN104204957A (zh) * 2012-03-30 2014-12-10 株式会社阿迪泰克工程 曝光描绘装置及曝光描绘方法
CN105593396A (zh) * 2013-09-27 2016-05-18 佳能特机株式会社 对准方法以及对准装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101517020B1 (ko) 2008-05-15 2015-05-04 삼성디스플레이 주식회사 유기전계발광표시장치의 제조장치 및 제조방법
JP2014065959A (ja) * 2012-09-27 2014-04-17 Hitachi High-Technologies Corp 蒸着装置、および、蒸着装置における基板設置方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW571144B (en) * 1999-12-09 2004-01-11 Hitachi Techno Eng Substrate assembling apparatus
CN101013274A (zh) * 2006-02-03 2007-08-08 佳能株式会社 掩模成膜方法及掩模成膜设备
TW201103995A (en) * 2009-03-18 2011-02-01 Ulvac Inc An alignment method and a deposition method
JP2013035611A (ja) * 2011-08-03 2013-02-21 Sekisui Chem Co Ltd 表面処理における基板移送装置及び方法
CN104204957A (zh) * 2012-03-30 2014-12-10 株式会社阿迪泰克工程 曝光描绘装置及曝光描绘方法
CN105593396A (zh) * 2013-09-27 2016-05-18 佳能特机株式会社 对准方法以及对准装置

Also Published As

Publication number Publication date
CN107851603A (zh) 2018-03-27
JP6351918B2 (ja) 2018-07-04
KR20180137393A (ko) 2018-12-27
KR102219478B1 (ko) 2021-02-23
WO2017222009A1 (ja) 2017-12-28
JPWO2017222009A1 (ja) 2018-07-19
KR20210021140A (ko) 2021-02-24

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