KR20210021140A - 기판 재치 방법, 성막 방법, 전자 디바이스 제조 방법 - Google Patents
기판 재치 방법, 성막 방법, 전자 디바이스 제조 방법 Download PDFInfo
- Publication number
- KR20210021140A KR20210021140A KR1020217004745A KR20217004745A KR20210021140A KR 20210021140 A KR20210021140 A KR 20210021140A KR 1020217004745 A KR1020217004745 A KR 1020217004745A KR 20217004745 A KR20217004745 A KR 20217004745A KR 20210021140 A KR20210021140 A KR 20210021140A
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- substrate
- mask
- alignment
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- film
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H01L27/32—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016125834 | 2016-06-24 | ||
JP2016125833 | 2016-06-24 | ||
JPJP-P-2016-125833 | 2016-06-24 | ||
JPJP-P-2016-125834 | 2016-06-24 | ||
JPJP-P-2017-101233 | 2017-05-22 | ||
JP2017101233 | 2017-05-22 | ||
PCT/JP2017/023004 WO2017222009A1 (ja) | 2016-06-24 | 2017-06-22 | 基板載置方法、成膜方法、電子デバイスの製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020177036310A Division KR102219478B1 (ko) | 2016-06-24 | 2017-06-22 | 기판 재치 방법, 성막 방법, 전자 디바이스 제조 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20210021140A true KR20210021140A (ko) | 2021-02-24 |
Family
ID=60784142
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020177036310A KR102219478B1 (ko) | 2016-06-24 | 2017-06-22 | 기판 재치 방법, 성막 방법, 전자 디바이스 제조 방법 |
KR1020217004745A KR20210021140A (ko) | 2016-06-24 | 2017-06-22 | 기판 재치 방법, 성막 방법, 전자 디바이스 제조 방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020177036310A KR102219478B1 (ko) | 2016-06-24 | 2017-06-22 | 기판 재치 방법, 성막 방법, 전자 디바이스 제조 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6351918B2 (ja) |
KR (2) | KR102219478B1 (ja) |
CN (1) | CN107851603B (ja) |
WO (1) | WO2017222009A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102019490B1 (ko) | 2014-12-10 | 2019-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세싱 챔버에서 기판을 마스킹하기 위한 마스크 어레인지먼트, 기판 상에 층을 증착하기 위한 장치, 및 프로세싱 챔버에서 기판을 마스킹하기 위한 마스크 어레인지먼트를 정렬하기 위한 방법 |
KR101979149B1 (ko) * | 2018-04-27 | 2019-05-15 | 캐논 톡키 가부시키가이샤 | 얼라인먼트 방법, 이를 사용한 증착방법 및 전자디바이스 제조방법 |
CN108642452B (zh) * | 2018-06-08 | 2020-07-03 | 芜湖市亿仑电子有限公司 | 一种电容器金属化薄膜加工真空镀膜机 |
KR102427823B1 (ko) * | 2018-06-11 | 2022-07-29 | 캐논 톡키 가부시키가이샤 | 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 |
JP7170524B2 (ja) * | 2018-12-14 | 2022-11-14 | キヤノントッキ株式会社 | 基板載置方法、成膜方法、成膜装置、有機elパネルの製造システム |
CN113490762A (zh) | 2019-03-15 | 2021-10-08 | 应用材料公司 | 沉积掩模、及制造和使用沉积掩模的方法 |
US11538706B2 (en) | 2019-05-24 | 2022-12-27 | Applied Materials, Inc. | System and method for aligning a mask with a substrate |
US11189516B2 (en) | 2019-05-24 | 2021-11-30 | Applied Materials, Inc. | Method for mask and substrate alignment |
WO2020251696A1 (en) | 2019-06-10 | 2020-12-17 | Applied Materials, Inc. | Processing system for forming layers |
US10916464B1 (en) | 2019-07-26 | 2021-02-09 | Applied Materials, Inc. | Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency |
CN211339668U (zh) * | 2019-12-26 | 2020-08-25 | 昆山国显光电有限公司 | 夹持装置 |
JP2022083681A (ja) * | 2020-11-25 | 2022-06-06 | キヤノントッキ株式会社 | アライメント装置、成膜装置、アライメント方法、成膜方法、および電子デバイスの製造方法 |
JP2022093003A (ja) * | 2020-12-11 | 2022-06-23 | キヤノントッキ株式会社 | アライメント装置、成膜装置、アライメント方法、成膜方法及び電子デバイスの製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009277655A (ja) | 2008-05-15 | 2009-11-26 | Samsung Mobile Display Co Ltd | 有機電界発光表示装置の製造装置及び製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3641709B2 (ja) * | 1999-12-09 | 2005-04-27 | 株式会社 日立インダストリイズ | 基板の組立方法とその装置 |
JP4773834B2 (ja) * | 2006-02-03 | 2011-09-14 | キヤノン株式会社 | マスク成膜方法およびマスク成膜装置 |
WO2010106958A1 (ja) * | 2009-03-18 | 2010-09-23 | 株式会社アルバック | 位置合わせ方法、蒸着方法 |
JP2013035611A (ja) * | 2011-08-03 | 2013-02-21 | Sekisui Chem Co Ltd | 表面処理における基板移送装置及び方法 |
JP5813555B2 (ja) * | 2012-03-30 | 2015-11-17 | 株式会社アドテックエンジニアリング | 露光描画装置及び露光描画方法 |
JP2014065959A (ja) * | 2012-09-27 | 2014-04-17 | Hitachi High-Technologies Corp | 蒸着装置、および、蒸着装置における基板設置方法 |
JP6250999B2 (ja) * | 2013-09-27 | 2017-12-20 | キヤノントッキ株式会社 | アライメント方法並びにアライメント装置 |
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2017
- 2017-06-22 CN CN201780002058.1A patent/CN107851603B/zh active Active
- 2017-06-22 WO PCT/JP2017/023004 patent/WO2017222009A1/ja active Application Filing
- 2017-06-22 JP JP2018515326A patent/JP6351918B2/ja active Active
- 2017-06-22 KR KR1020177036310A patent/KR102219478B1/ko active IP Right Grant
- 2017-06-22 KR KR1020217004745A patent/KR20210021140A/ko not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009277655A (ja) | 2008-05-15 | 2009-11-26 | Samsung Mobile Display Co Ltd | 有機電界発光表示装置の製造装置及び製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20180137393A (ko) | 2018-12-27 |
CN107851603B (zh) | 2021-11-23 |
WO2017222009A1 (ja) | 2017-12-28 |
JP6351918B2 (ja) | 2018-07-04 |
CN107851603A (zh) | 2018-03-27 |
JPWO2017222009A1 (ja) | 2018-07-19 |
KR102219478B1 (ko) | 2021-02-23 |
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