CN107849735A - 用于制造纳米结构的方法 - Google Patents

用于制造纳米结构的方法 Download PDF

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Publication number
CN107849735A
CN107849735A CN201680043103.3A CN201680043103A CN107849735A CN 107849735 A CN107849735 A CN 107849735A CN 201680043103 A CN201680043103 A CN 201680043103A CN 107849735 A CN107849735 A CN 107849735A
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CN
China
Prior art keywords
mask
layers
evaporating temperature
layer
monocrystalline
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CN201680043103.3A
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English (en)
Chinese (zh)
Inventor
S·韦齐恩
B·达米拉诺
J·布罗
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NATIONAL CENTER FOR SCIENTIFIC RESEARCH
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NATIONAL CENTER FOR SCIENTIFIC RESEARCH
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Publication of CN107849735A publication Critical patent/CN107849735A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Laminated Bodies (AREA)
CN201680043103.3A 2015-06-10 2016-06-03 用于制造纳米结构的方法 Pending CN107849735A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1555283 2015-06-10
FR1555283A FR3037341A1 (fr) 2015-06-10 2015-06-10 Procede de fabrication d'au moins un type de nanostructures et structures comprenant une pluralite de telles nanostructures
PCT/EP2016/062721 WO2016198341A1 (fr) 2015-06-10 2016-06-03 Procede de fabrication de nanostructures

Publications (1)

Publication Number Publication Date
CN107849735A true CN107849735A (zh) 2018-03-27

Family

ID=54366290

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680043103.3A Pending CN107849735A (zh) 2015-06-10 2016-06-03 用于制造纳米结构的方法

Country Status (7)

Country Link
US (1) US11085130B2 (https=)
EP (1) EP3307927A1 (https=)
JP (1) JP6772192B2 (https=)
KR (1) KR20180017124A (https=)
CN (1) CN107849735A (https=)
FR (1) FR3037341A1 (https=)
WO (1) WO2016198341A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW239894B (en) * 1994-07-02 1995-02-01 Nat Science Committee Quantum dot structure
US20070257264A1 (en) * 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
CN101443887A (zh) * 2006-03-10 2009-05-27 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
US7745315B1 (en) * 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
CN102414788A (zh) * 2009-06-08 2012-04-11 国际商业机器公司 用纳米/微球光刻制造纳米/微线太阳能电池

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
DE3884881T2 (de) * 1987-08-04 1994-02-10 Sharp Kk Halbleiterlaservorrichtung.
JP3635683B2 (ja) * 1993-10-28 2005-04-06 ソニー株式会社 電界効果トランジスタ
US5482890A (en) * 1994-10-14 1996-01-09 National Science Council Method of fabricating quantum dot structures
US20080073743A1 (en) * 2006-02-17 2008-03-27 Lockheed Martin Corporation Templated growth of semiconductor nanostructures, related devices and methods
AU2007313096B2 (en) * 2006-03-10 2011-11-10 Unm Rainforest Innovations Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
JP4986138B2 (ja) * 2006-11-15 2012-07-25 独立行政法人産業技術総合研究所 反射防止構造を有する光学素子用成形型の製造方法
JP5152715B2 (ja) 2007-09-22 2013-02-27 学校法人関西学院 三次元微細加工方法及び三次元微細構造
JP5267945B2 (ja) 2009-03-31 2013-08-21 学校法人関西学院 三次元微細加工方法及び三次元微細構造
JP5688928B2 (ja) 2010-07-29 2015-03-25 アキレス株式会社 防水靴用防水インナー
US8685858B2 (en) 2011-08-30 2014-04-01 International Business Machines Corporation Formation of metal nanospheres and microspheres
JP5688780B2 (ja) 2013-05-07 2015-03-25 学校法人関西学院 ＳｉＣ基板、炭素供給フィード基板及び炭素ナノ材料付きＳｉＣ基板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW239894B (en) * 1994-07-02 1995-02-01 Nat Science Committee Quantum dot structure
US20070257264A1 (en) * 2005-11-10 2007-11-08 Hersee Stephen D CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
CN101443887A (zh) * 2006-03-10 2009-05-27 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
US7745315B1 (en) * 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
CN102414788A (zh) * 2009-06-08 2012-04-11 国际商业机器公司 用纳米/微球光刻制造纳米/微线太阳能电池

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
任慧等: "《微纳米含能材料》", 30 April 2015, 北京理工大学出版社 *
杨小丽: "《光电子技术基础》", 28 February 2005, 北京邮电大学出版社 *

Also Published As

Publication number Publication date
US11085130B2 (en) 2021-08-10
EP3307927A1 (fr) 2018-04-18
US20180327929A1 (en) 2018-11-15
FR3037341A1 (fr) 2016-12-16
JP6772192B2 (ja) 2020-10-21
JP2018526230A (ja) 2018-09-13
WO2016198341A1 (fr) 2016-12-15
KR20180017124A (ko) 2018-02-20

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Application publication date: 20180327