CN107845606A - 一种tft基板的制备方法以及tft基板 - Google Patents
一种tft基板的制备方法以及tft基板 Download PDFInfo
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Abstract
本发明公开了一种TFT基板的制备方法以及TFT基板。该方法包括:提供一硅晶圆板材;在硅晶圆板材上形成第一掩膜结构,并进行刻蚀处理,以形成岛状结构;对岛状结构进行逐层切割,以形成硅晶圆小板;将硅晶圆小板粘附至基板上,以形成TFT基板。通过上述方式,本发明能够在基板上形成岛状结构,提高基板在弯折过程中的稳定性。
Description
技术领域
本发明涉及显示面板制造技术领域,特别是涉及一种TFT基板的制备方法以及TFT基板。
背景技术
柔性显示面板,是一种可变型可弯曲的显示装置。柔性显示面板可以包括电子纸、LCD、OLED等,其中,OLED柔性显示面板具有低功耗,低厚度,可收卷等特点,受到人们的广泛关注。
OLED柔性显示面板包括柔性基板,OLED显示器件,和连接OLED显示器件的引线。其中,OLED显示器件包括相对设置的阳极与阴极、设置在阳极与阴极之间的功能层。OLED显示面板的发光原理是半导体材料和有机发光材料在阴极与阳极之间的电场驱动下,通过载流子注入和复合进而发光。
聚酰亚胺(PI)柔性基板是具备良好的弯折性能和耐温性能的柔性基板,因此可用于OLED柔性显示面板的基板。为了减轻柔性基板和TFT器件膜层之间应力失配,提高多次弯折过程中的稳定性,可以将柔性基板设计成岛状结构,但是如何实现聚酰亚胺柔性基板的岛状结构是一大难点。
发明内容
有鉴于此,本发明主要解决的技术问题是提供一种TFT基板的制备方法以及TFT基板,能够在基板上形成岛状结构,提高基板在弯折过程中的稳定性。
为解决上述技术问题,本发明采用的一个技术方案是:提供一种TFT基板的制备方法,该方法包括:
提供一硅晶圆板材;在硅晶圆板材上形成第一掩膜结构,并进行刻蚀处理,以形成岛状结构;对岛状结构进行逐层切割,以形成硅晶圆小板;将硅晶圆小板粘附至基板上,以形成TFT基板。
为解决上述技术问题,本发明采用的又一个技术方案是:提供一种TFT基板,该TFT基板由上述实施例所阐述的TFT基板的制备方法制得,该方法包括:
提供一硅晶圆板材;在硅晶圆板材上形成第一掩膜结构,并进行刻蚀处理,以形成岛状结构;对岛状结构进行逐层切割,以硅晶圆小板;将硅晶圆小板粘附至基板上,以形成TFT基板。
本发明的有益效果是:本发明通过在硅晶圆板材上形成第一掩膜结构并以其为掩蔽,进行刻蚀以形成岛状结构,再将岛状结构逐层切割并粘附于基板上,以形成TFT基板,能够提高基板在弯折过程中的稳定性,减轻基板与TFT器件膜层之间的应力失配。
附图说明
图1是本发明TFT基板制备方法一实施例的流程示意图;
图2是本发明TFT基板制备方法另一实施例的流程示意图;
图3是本发明第一掩膜结构一实施例的结构示意图;
图4是本发明岛状结构一实施例的结构示意图;
图5是本发明第二掩膜层以及第一保护层一实施例的结构示意图;
图6是本发明第二保护层一实施例的结构示意图;
图7是本发明第二保护层子层一实施例的结构示意图;
图8是本发明粘附硅晶圆小板的基板一实施例的结构示意图;
图9是本发明TFT基板一实施例的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。
为解决现有技术难以在基板上形成岛状结构的技术问题,本实施例提供一种TFT基板的制备方法,该方法包括:提供一硅晶圆板材;在硅晶圆板材上形成第一掩膜结构,并进行刻蚀处理,以形成岛状结构;对岛状结构进行逐层切割,以形成硅晶圆小板;将硅晶圆小板粘附至基板上,以形成TFT基板。以下进行详细阐述。
请参阅图1,图1是本发明TFT基板制备方法一实施例的流程示意图。
S101:提供一硅晶圆板材;
在本实施例中,为实现在柔性基板上制备岛状物,以硅晶圆板材为材料,制备粘附于柔性基板上的岛状物。当然,如本领域技术人员所理解,具备与柔性基板良好的配合性能,并且具有与硅晶圆相同分子结构的材质,例如硅的同族化学元素,均可作为本实施例制备岛状物的材料,在此不做限定。
S102:在硅晶圆板材上形成第一掩膜结构,并进行刻蚀处理,以形成岛状结构;
在本实施例中,在硅晶圆板材上沉积金属层作为第一掩膜结构,之后对硅晶圆板材进行刻蚀处理,从而形成岛状结构,金属层可以为镍等金属。
S103:对岛状结构进行逐层切割,以形成硅晶圆小板;
在本实施例中,通过对硅晶圆板材进行刻蚀处理,形成岛状结构之后,根据TFT基板所需岛状结构大小,对硅晶圆板材上的岛状结构进行逐层切割,得到硅晶圆小板,作为基板上的岛状结构。
S104:将硅晶圆小板粘附至基板上,以形成TFT基板;
在本实施例中,基板可以为聚酰亚胺(PI)柔性基板,PI柔性基板自身具有一定粘着力,可将硅晶圆小板粘附于其上,利用PI柔性基板自身的粘着力,将硅晶圆小板粘附于PI柔性基板上,后续制程中的TFT器件可以以硅晶圆小板为岛状结构,完成相应制备过程,从而形成TFT基板。
以上可以看出,本发明通过在硅晶圆板材上形成第一掩膜结构并以其为掩蔽,进行刻蚀以形成岛状结构,再将岛状结构逐层切割并粘附于基板上,以形成TFT基板,能够提高基板在弯折过程中的稳定性,减轻基板与TFT器件膜层之间的应力失配。
请参阅图2,图2是本发明TFT基板制备方法另一实施例的流程示意图。
S201:提供一硅晶圆板材;
在本实施例中,为实现在柔性基板上制备岛状物,以硅晶圆板材为材料,制备粘附于柔性基板上的岛状物。当然,如本领域技术人员所理解,具备与柔性基板良好的配合性能,并且具有与硅晶圆相同分子结构的材质,例如硅的同族化学元素,均可作为本实施例制备岛状物的材料,在此不做限定。
S202:在硅晶圆板材上形成第一掩膜结构,并进行刻蚀处理,以形成岛状结构;
请参阅图3-4,在本实施例中,在硅晶圆板材300上涂布一层光阻材料,并进行图案化处理,去除硅晶圆板材上需要形成第一掩膜结构301位置的光阻材料,其余位置的光阻材料保留,之后在硅晶圆板材300涂布有光阻材料一侧形成一层第一掩膜层,第一掩膜层覆盖硅晶圆板材表面及其上光阻材料,使用能刻蚀硅晶圆板材表面涂布的光阻材料的刻蚀溶液,将覆盖有光阻材料的第一掩膜层去除,留下没有覆盖光阻材料的第一掩膜层,从而形成第一掩膜结构301,硅晶圆板材300以第一掩膜结构301为掩蔽,进行等离子刻蚀,以形成岛状结构401。
可选地,硅晶圆板材300上涂布的光阻材料可以为正型光阻材料,硅晶圆板材300需要形成第一掩膜结构位置的透光率大于硅晶圆板材300上的其他位置,曝光一定时间之后,进行显影,由于正性光阻材料受光照流体化能被刻蚀溶液洗去,从而去除硅晶圆板材300上需要形成第一掩膜结构301位置的光阻材料,当然,硅晶圆板材300上涂布的光阻材料也可以为负型光阻材料,硅晶圆板材300需要形成第一掩膜结构301位置的透光率小于硅晶圆板材300上的其他位置,曝光一定时间之后,进行显影,由于负型光阻材料受光照硬化,从而去除硅晶圆板材300上需要形成第一掩膜结构301位置的光阻材料,且在本实施例中,若光阻材料为负型光阻材料,硅晶圆板材300需要形成第一掩膜结构301位置的透光率为0%,硅晶圆板材300其他位置的负型光阻材料受光硬化后,通过刻蚀溶液洗去硅晶圆板材300需要形成第一掩膜结构301位置的光阻材料。
可选地,硅晶圆板材300表面光阻材料的曝光时间根据所需要形成图案高度而定,需满足能够去除硅晶圆板材300表面除需形成第一掩膜结构301位置的其他位置的第一掩膜层,均可为本实施例硅晶圆板材表面光阻材料的曝光时间,在此不做限定。
可选地,硅晶圆板材300以其表面形成的第一掩膜结构301为掩蔽,可以通过对硅晶圆板材300表面释放等离子束,通过等离子对硅晶圆板材300进行冲击,以形成所需的岛状结构401。
可选地,第一掩膜结构301可以为镍等金属元素,当然,如本领域技术人员所理解,与镍化学物理性质相似的元素,例如镍的同族元素,也可作为本实施例的第一掩膜结构301,在此不做限定。
可选地,第一掩膜结构301的厚度可以为100nm,当然,如本领域技术人员所理解,第一掩膜结构301的厚度只需要满足足够作为硅晶圆板材300进行等离子刻蚀的掩蔽结构,均可作为本实施例第一掩膜结构301的厚度,在此不做限定。
S203:在硅晶圆板材上沉积第二掩膜层,并形成第一保护层;
请参阅图5,在本实施例中,在硅晶圆板材300形成有岛状结构401的表面沉积第二掩膜层501,并在硅晶圆板材300没有形成岛状结构401区域的第二掩膜层501上形成第一保护层502,并对第一保护层502进行硬化处理。
可选地,对第一保护层502进行硬化处理可以为将第一保护层502置于第一温度的环境中,并维持一第一预设时间,以使第一保护层502硬化,通过对第一保护层502进行恒温固化,以增强第一保护层502在第二掩膜层501上的附着力。第一温度可以为180℃,第一预设时间可以为1min,如本领域技术人员所理解,第一温度以及第一预设时间根据第一保护层502的厚度以及面积确定,旨在使第一保护层502达到所需硬度,以提供与第二掩膜层501之间足够的附着力,因此上述第一温度以及第一预设时间仅为论述需要,并非因此对本实施例所阐述的第一温度以及第一预设时间造成限定。
可选地,第一保护层502可以为聚甲基丙烯酸甲酯(PMMA)等,在硅晶圆板材300没有形成岛状结构401区域的第二掩膜层501上涂布厚度为100nm的PMMA,以使该处的第二掩膜层501粘附于硅晶圆板300材上。PMMA的厚度用以提供第二掩膜层501与硅晶圆板材300之间足够的粘着力,根据第二掩膜层501的大小以及厚度确定,并且如本领域技术人员所理解,第一保护层502可以为其他具有粘着力的化学胶体,其厚度根据其与硅晶圆板材300以及第二掩膜层501之间的粘附情况,以及第二掩膜层501的大小以及厚度确定。
可选地,在硅晶圆板材300形成有岛状结构401的表面可以通过PVD沉积第二掩膜层501,可以通过真空镀法、溅射以及离子镀法等PVD沉积方法在硅晶圆板材300表面沉积第二掩膜层501。
可选地,第二掩膜层501可以为金金属层,通过在硅晶圆板材300未形成有岛状结构401区域的沉积第二掩膜层501,可以便于岛状结构401底部与第一保护层502脱离,当然,如本领域技术人员所理解,第二掩膜层501可以为其他金属层,只要能够使岛状结构401底部便于与第一保护层502脱离,均可为本实施例所阐述的第二掩膜层501,在此不做限定。
可选地,第二掩膜层501厚度可以为30nm,当然,如本领域技术人员所理解,第二掩膜层501的厚度能够使岛状结构401底部便于与第一保护层502脱离,均为作为本实施例所阐述第二掩膜层501的厚度,在此不做限定。
S204:去除岛状结构表面的第二掩膜层,并形成包裹岛状结构的第二保护层;
请参阅图6,在本实施例中,使用对应第二掩膜层501的刻蚀溶液对岛状结构401表面的第二掩膜层501进行刻蚀,由于硅晶圆板材300没有形成岛状结构401区域的第二掩膜层501表面覆盖有第一保护层502,不会被刻蚀溶液刻蚀,因此仅岛状结构401远离第一保护层502表面的第二掩膜层501会被刻蚀溶液刻蚀;之后在硅晶圆板材300上形成包裹岛状结构401设置的第二保护层601,并对第二保护层601进行硬化处理。
可选地,对第二保护层601进行硬化处理可以为将第二保护层601置于第二温度的环境中,并维持一第二预设时间,以使第二保护层601硬化,通过对第二保护层601进行恒温固化,以增强第二保护层601与岛状结构401之间的附着力。第二温度可以为80℃,第二预设时间可以为4h,如本领域技术人员所理解,第二温度以及第二预设时间根据第二保护层601的厚度以及面积确定,旨在使第二保护层601达到所需硬度,以提供其与岛状结构401之间足够的附着力,因此上述第二温度以及第二预设时间仅为论述需要,并非因此对本实施例所阐述的第二温度以及第二预设时间造成限定。
S205:对岛状结构以及第二保护层进行逐层切割,得到第二保护层子层;
请参阅图7,在本实施例中,对第二保护层601以及其包裹的岛状结构401进行逐层切割,以得到第二保护层子层700,第二保护层子层700包裹有对应岛状结构401数量的硅晶圆小板701,用于后续TFT基板表面岛状物的制备。
可选地,第二保护层601可以为环氧树脂层等,将硅晶圆小板701包裹于第二保护层601中,并对第二保护层601进行硬化处理,以保持硅晶圆小板701之间的距离D不变,如本领域技术人员所理解,通过第二保护层601维持的硅晶圆小板701之间的距离D根据TFT基板上对岛状物之间距离的要求确定,在此不做限定。
可选地,对第二保护层601以及其包裹的岛状结构401的切割方向可以为平行于硅晶圆板材300延伸平面方向,当然,如本领域技术人员所理解,也可对第二保护层601以及其包裹的岛状结构401进行逐个切割,旨在获得后续制备TFT基板表面岛状物的硅晶圆小板701,其切割方法在此不做限定,并且第二保护层子层700的厚度根据后续制备TFT基板表面岛状物的厚度确定,旨在得到满足制程要求厚度的岛状物,在此不做限定。
可选地,可使用纳米金刚石切刀对第二保护层601以及其包裹的岛状结构401进行逐层切割,以得到第二保护层子层700,当然,如本领域技术人员所理解,对第二保护层601以及其包裹的岛状结构401的切割方式可以为激光切割等纳米级切割工具,因此上述切割方式仅为论述需求,并非因此对本实施例所阐述的切割方式造成限定。
S206:将第二保护层子层粘附于基板上,对第二保护层子层进行刻蚀,以暴露硅晶圆小板,从而形成TFT基板;
请参阅图8,在本实施例中,制备TFT基板所使用的基板801可以为聚酰亚胺(PI)柔性基板,其自身带有一定的粘度系数,本实施例以PI柔性基板为例进行阐述,凡具有粘度系数的柔性基板材质均可作为本实施例制备TFT基板的基板801,并非因此对本实施例制备TFT基板的基板801材质进行限定。
将从上述实施例获得的第二保护层子层700粘附于基板801上,对第二保护层子层700进行等离子刻蚀,以使硅晶圆小板701暴露,通过等离子刻蚀去除基板801上的第二保护层601,以硅晶圆小板701为岛状物,完成TFT基板表面岛状物的制备,并且对基板801进行恒温处理,将基板801置于第三温度环境中,维持一第三预设时间,增强硅晶圆小板701在基板801上的粘附力,后续TFT器件可以以硅晶圆小板701为岛状物,完成后续制程。
可选地,第三温度可以为150℃,第三预设时间可以为3min,如本领域技术人员所理解,第三温度以及第三预设时间根据硅晶圆小板701的厚度与面积以及硅晶圆小板701与基板801之间的粘附能力确定,旨在使硅晶圆小板701与基板801之间的粘附力达到所需强度,因此上述第三温度以及第三预设时间仅为论述需要,并非因此对本实施例所阐述的第三温度以及第三预设时间造成限定。
综上所述,本发明通过硅晶圆板材表面的第一掩膜结构,进行刻蚀得到岛状结构,以及通过第二掩膜层,实现对岛状结构的分层切割,得到用于制备TFT基板表面岛状物的硅晶圆小板,将硅晶圆小板粘附于基板上,以形成TFT基板,通过岛状物与TFT器件膜层之间的配合,能够提高基板在弯折过程中的稳定性,减轻基板与TFT器件膜层之间的应力失配。
请参阅图9,图9是本发明TFT基板一实施例的结构示意图。
在本实施例中,TFT基板900包括TFT器件膜层901以及基板衬底902,TFT基板900通过上述实施例所阐述的TFT基板的制备方法制得,能够减轻TFT基板900的TFT器件膜层901以及基板衬底902之间在弯折过程中的应力失配,提高TFT基板900在弯折过程中的稳定性,在此就不再赘述。
以上所述仅为本发明的实施方式,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (10)
1.一种TFT基板的制备方法,其特征在于,所述方法包括:
提供一硅晶圆板材;
在所述硅晶圆板材上形成第一掩膜结构,并进行刻蚀处理,以形成岛状结构;
对所述岛状结构进行逐层切割,以形成硅晶圆小板;
将所述硅晶圆小板粘附至基板上,以形成所述TFT基板。
2.根据权利要求1所述的方法,其特征在于,所述在所述硅晶圆板材上形成第一掩膜结构具体包括:
在所述硅晶圆板材上涂布光阻材料,并进行图案化处理,去除对应所述第一掩膜结构位置的所述光阻材料;
在所述硅晶圆板材涂布有所述光阻材料一侧形成第一掩膜层,所述第一掩膜层覆盖所述光阻材料,使用对应所述光阻材料的刻蚀溶液,去除覆盖有所述光阻材料的所述第一掩膜层,以形成所述第一掩膜结构。
3.根据权利要求1所述的方法,其特征在于,所述在所述硅晶圆板材上形成第一掩膜结构,并进行刻蚀处理的步骤包括:对所述硅晶圆板材进行等离子体刻蚀,以形成所述岛状结构。
4.根据权利要求1所述的方法,其特征在于,所述形成岛状结构之后包括:
在所述硅晶圆板材上沉积第二掩膜层,并在所述硅晶圆板材没有形成所述岛状结构区域的所述第二掩膜层上形成第一保护层,并对所述第一保护层进行硬化处理;
使用对应所述第二掩膜层的刻蚀溶液,去除所述岛状结构远离所述第一保护层的表面上的所述第二掩膜层;
在所述硅晶圆板材上形成包裹所述岛状结构的第二保护层,并对所述第二保护层进行硬化处理。
5.根据权利要求4所述的方法,其特征在于,
所述对所述第一保护层进行硬化处理具体包括:将所述第一保护层置于第一温度的环境中,并维持一第一预设时间,以使所述第一保护层硬化;
所述对所述第二保护层进行硬化处理具体包括:将所述第二保护层置于第二温度的环境中,并维持一第二预设时间,以使所述第二保护层硬化。
6.根据权利要求4所述的方法,其特征在于,所述对所述岛状结构进行逐层切割具体包括:对所述岛状结构以及所述第二保护层进行逐层切割,得到第二保护层子层,所述第二保护层子层包裹有所述硅晶圆小板。
7.根据权利要求6所述的方法,其特征在于,对包裹所述岛状结构的所述第二保护层进行逐层切割的切割方向平行于所述硅晶圆板材的延伸平面。
8.根据权利要求6所述的方法,其特征在于,将所述第二保护层子层转移至所述基板上,对所述第二保护层子层进行等离子体刻蚀,以暴露所述硅晶圆小板,从而形成所述TFT基板。
9.根据权利要求6所述的方法,其特征在于,所述方法进一步包括:将所述TFT基板置于第三温度的环境中,并维持一第三预设时间。
10.一种TFT基板,其特征在于,所述TFT基板通过如权利要求1~9任一项所述的TFT基板制备方法制得。
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CN102969320A (zh) * | 2012-12-10 | 2013-03-13 | 京东方科技集团股份有限公司 | 柔性显示基板及其制备方法、柔性显示装置 |
CN106158582A (zh) * | 2015-04-01 | 2016-11-23 | 中国科学院上海高等研究院 | 近邻阴影效应辅助阵列法制备层转移薄晶硅工艺 |
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JP2020536383A (ja) | 2020-12-10 |
WO2019075841A1 (zh) | 2019-04-25 |
JP6994566B2 (ja) | 2022-01-14 |
US10930546B2 (en) | 2021-02-23 |
CN107845606B (zh) | 2020-05-05 |
KR102307137B1 (ko) | 2021-09-30 |
EP3699954A1 (en) | 2020-08-26 |
EP3699954A4 (en) | 2021-07-14 |
KR20200065073A (ko) | 2020-06-08 |
US20190385900A1 (en) | 2019-12-19 |
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