CN107833848B - 具有空间分布的气体通道的气流控制衬垫 - Google Patents

具有空间分布的气体通道的气流控制衬垫 Download PDF

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CN107833848B
CN107833848B CN201710953411.6A CN201710953411A CN107833848B CN 107833848 B CN107833848 B CN 107833848B CN 201710953411 A CN201710953411 A CN 201710953411A CN 107833848 B CN107833848 B CN 107833848B
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liner
gas
channels
gas passages
liner assembly
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CN107833848A (zh
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穆罕默德·图格鲁利·萨米尔
刘树坤
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87265—Dividing into parallel flow paths with recombining

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN201710953411.6A 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫 Active CN107833848B (zh)

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US201361817691P 2013-04-30 2013-04-30
US61/817,691 2013-04-30
CN201480024290.1A CN105164788B (zh) 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫

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CN201480024290.1A Active CN105164788B (zh) 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫
CN202010034452.7A Active CN111211074B (zh) 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫

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CN202010034452.7A Active CN111211074B (zh) 2013-04-30 2014-04-21 具有空间分布的气体通道的气流控制衬垫

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US (3) US9553002B2 (enExample)
JP (1) JP6368773B2 (enExample)
KR (2) KR20160003831A (enExample)
CN (3) CN107833848B (enExample)
TW (2) TWI679299B (enExample)
WO (1) WO2014179093A1 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012128783A1 (en) * 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
CN107833848B (zh) 2013-04-30 2021-12-07 应用材料公司 具有空间分布的气体通道的气流控制衬垫
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
US20150184292A1 (en) * 2013-12-30 2015-07-02 Lam Research Corporation Systems and methods for preventing mixing of two gas streams in a processing chamber
CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室
US10203604B2 (en) 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
US11150140B2 (en) * 2016-02-02 2021-10-19 Kla Corporation Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
US10168626B2 (en) * 2016-06-17 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
US10788764B2 (en) 2016-06-17 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US9958782B2 (en) * 2016-06-29 2018-05-01 Applied Materials, Inc. Apparatus for post exposure bake
USD838681S1 (en) 2017-04-28 2019-01-22 Applied Materials, Inc. Plasma chamber liner
USD837754S1 (en) 2017-04-28 2019-01-08 Applied Materials, Inc. Plasma chamber liner
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD842259S1 (en) 2017-04-28 2019-03-05 Applied Materials, Inc. Plasma chamber liner
WO2018204078A1 (en) * 2017-05-01 2018-11-08 Applied Materials, Inc. High pressure anneal chamber with vacuum isolation and pre-processing environment
JP6837911B2 (ja) * 2017-05-17 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US11004722B2 (en) * 2017-07-20 2021-05-11 Applied Materials, Inc. Lift pin assembly
KR102081704B1 (ko) * 2018-02-05 2020-02-27 세메스 주식회사 기판 처리 장치
WO2020046567A1 (en) * 2018-08-29 2020-03-05 Applied Materials, Inc. Chamber injector
CN113196444B (zh) * 2018-12-20 2024-07-02 应用材料公司 用于供应改良的气流至处理腔室的处理空间的方法和设备
US11486038B2 (en) * 2019-01-30 2022-11-01 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
US10995419B2 (en) * 2019-04-16 2021-05-04 Applied Materials, Inc. Methods and apparatus for gallium nitride deposition
WO2020231621A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Methods of reducing chamber residues
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
US11952660B2 (en) 2019-07-29 2024-04-09 Applied Materials, Inc. Semiconductor processing chambers and methods for cleaning the same
TWI861210B (zh) 2019-09-09 2024-11-11 美商應用材料股份有限公司 輸送反應氣體之處理系統與方法
CN115244671A (zh) * 2020-03-02 2022-10-25 朗姆研究公司 将涡轮泵连接到处理模块的转接板
KR102892099B1 (ko) * 2020-04-20 2025-11-26 어플라이드 머티어리얼스, 인코포레이티드 공유 가스 전달 및 배기 시스템을 갖는 다중-열 cvd 챔버들
CN115485822A (zh) * 2020-08-03 2022-12-16 应用材料公司 在批次热处理腔室中的晶片边缘温度校正
CN112002660B (zh) * 2020-08-27 2024-01-19 南京国盛电子有限公司 一种半导体处理装置、处理方法及应用
KR102907080B1 (ko) * 2020-10-13 2026-01-02 주성엔지니어링(주) 기판 처리 장치
WO2022080637A1 (ko) * 2020-10-13 2022-04-21 주성엔지니어링(주) 기판 처리 장치
US12188148B2 (en) 2020-12-22 2025-01-07 Applied Materials, Inc. Multi-layer EPI chamber body
CN112768384B (zh) * 2021-01-26 2024-02-27 西安奕斯伟材料科技股份有限公司 预热环及晶圆外延生长设备
US11781212B2 (en) * 2021-04-07 2023-10-10 Applied Material, Inc. Overlap susceptor and preheat ring
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
US12660554B2 (en) 2021-05-11 2026-06-16 Applied Materials, Inc. Lamp heating module for an epitaxy process chamber
KR20250075736A (ko) * 2021-05-11 2025-05-28 어플라이드 머티어리얼스, 인코포레이티드 에피택시 및 cvd 챔버용 가스 인젝터
US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
US12060651B2 (en) 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
US12221696B2 (en) * 2022-05-27 2025-02-11 Applied Materials, Inc. Process kits and related methods for processing chambers to facilitate deposition process adjustability
CN117821934A (zh) * 2022-09-29 2024-04-05 中微半导体设备(上海)股份有限公司 腔室组件、进气装置及衬底处理设备
US20240112931A1 (en) * 2022-10-03 2024-04-04 Applied Materials, Inc. Cassette structures and related methods for batch processing in epitaxial deposition operations
CN117904601B (zh) * 2022-10-10 2026-07-14 中微半导体设备(上海)股份有限公司 一种衬底处理设备及方法
US20240254627A1 (en) * 2023-01-27 2024-08-01 Applied Materials, Inc. Injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing of semiconductor manufacturing
US12651731B2 (en) * 2023-12-07 2026-06-09 Applied Materials, Inc. Cross flow gas delivery for particle reduction
US20250215566A1 (en) * 2023-12-27 2025-07-03 Applied Materials, Inc. Process chamber gas supply improvement
US12497693B2 (en) * 2024-03-27 2025-12-16 Applied Materials, Inc. Modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing
CN119297121B (zh) * 2024-11-15 2025-04-18 深圳市新凯来工业机器有限公司 半导体工艺腔室和半导体工艺设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183510A (ja) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd 気相成長装置およびエピタキシャルウェーハの製造方法
JP2007324285A (ja) * 2006-05-31 2007-12-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置
JP2010263112A (ja) * 2009-05-08 2010-11-18 Sumco Corp エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法
CN102763199A (zh) * 2010-02-12 2012-10-31 应用材料公司 处理腔室之气流改良

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142004A (en) * 1976-01-22 1979-02-27 Bell Telephone Laboratories, Incorporated Method of coating semiconductor substrates
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
US5269847A (en) 1990-08-23 1993-12-14 Applied Materials, Inc. Variable rate distribution gas flow reaction chamber
US5433780A (en) * 1992-11-20 1995-07-18 Tokyo Electron Limited Vacuum processing apparatus and exhaust system that prevents particle contamination
US5916369A (en) 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US6500734B2 (en) * 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
JP3243125B2 (ja) * 1994-06-27 2002-01-07 東京エレクトロン株式会社 処理装置
KR19990002605A (ko) 1997-06-20 1999-01-15 이형도 브러쉬레스 모터용 연성 회로판의 단속 구조
KR19990002605U (ko) * 1997-06-27 1999-01-25 김영환 챔버 내벽 보호용 실린더
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
FI114855B (fi) * 1999-07-09 2005-01-14 Outokumpu Oy Menetelmä reiän tulppaamiseksi ja menetelmällä valmistettu jäähdytyselementti
JP2002001100A (ja) * 2000-06-22 2002-01-08 Mitsubishi Heavy Ind Ltd プラズマ処理装置
JP2002100570A (ja) * 2000-09-22 2002-04-05 Komatsu Electronic Metals Co Ltd 枚葉式気相成長装置
JP4588894B2 (ja) * 2001-01-31 2010-12-01 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP2002231614A (ja) 2001-02-05 2002-08-16 Canon Inc 剥離用当て板、剥離装置及び方法
US20030198754A1 (en) * 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
JP4147017B2 (ja) 2001-10-19 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ基板処理装置
JP2004134625A (ja) * 2002-10-11 2004-04-30 Toshiba Corp 半導体装置の製造方法と製造装置
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7253084B2 (en) * 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
KR20060059305A (ko) * 2004-11-26 2006-06-01 삼성전자주식회사 반도체 공정 장비
JP4854317B2 (ja) * 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
JP5121698B2 (ja) * 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
JP5069424B2 (ja) * 2006-05-31 2012-11-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置及び同方法
JP5074741B2 (ja) * 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ 真空処理装置
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
KR20080073840A (ko) * 2007-02-07 2008-08-12 세메스 주식회사 내벽 보호체를 구비하는 반도체 제조 설비
US20080220150A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
JP2008235830A (ja) * 2007-03-23 2008-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 気相成長装置
US8980049B2 (en) * 2007-04-02 2015-03-17 Charm Engineering Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP5096047B2 (ja) * 2007-06-14 2012-12-12 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波透過板
US20100081284A1 (en) * 2008-09-29 2010-04-01 Applied Materials, Inc. Methods and apparatus for improving flow uniformity in a process chamber
US8147137B2 (en) * 2008-11-19 2012-04-03 Applied Materials, Inc. Pyrometry for substrate processing
KR101092122B1 (ko) * 2010-02-23 2011-12-12 주식회사 디엠에스 에칭 프로파일 제어를 위한 가스 인젝션 시스템
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
WO2012128783A1 (en) * 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
CN107833848B (zh) 2013-04-30 2021-12-07 应用材料公司 具有空间分布的气体通道的气流控制衬垫

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183510A (ja) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd 気相成長装置およびエピタキシャルウェーハの製造方法
JP2007324285A (ja) * 2006-05-31 2007-12-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 成膜反応装置
JP2010263112A (ja) * 2009-05-08 2010-11-18 Sumco Corp エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法
CN102763199A (zh) * 2010-02-12 2012-10-31 应用材料公司 处理腔室之气流改良

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