CN107818976B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN107818976B
CN107818976B CN201710784798.7A CN201710784798A CN107818976B CN 107818976 B CN107818976 B CN 107818976B CN 201710784798 A CN201710784798 A CN 201710784798A CN 107818976 B CN107818976 B CN 107818976B
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CN
China
Prior art keywords
semiconductor
region
epitaxial layer
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semiconductor device
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Active
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CN201710784798.7A
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English (en)
Chinese (zh)
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CN107818976A (zh
Inventor
儿玉荣介
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication of CN107818976A publication Critical patent/CN107818976A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/619—Combinations of lateral BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors

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  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
CN201710784798.7A 2016-09-14 2017-09-04 半导体器件 Active CN107818976B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016179331A JP6705726B2 (ja) 2016-09-14 2016-09-14 半導体装置
JP2016-179331 2016-09-14

Publications (2)

Publication Number Publication Date
CN107818976A CN107818976A (zh) 2018-03-20
CN107818976B true CN107818976B (zh) 2024-02-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710784798.7A Active CN107818976B (zh) 2016-09-14 2017-09-04 半导体器件

Country Status (3)

Country Link
US (1) US10229903B2 (https=)
JP (1) JP6705726B2 (https=)
CN (1) CN107818976B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109887912B (zh) * 2019-03-06 2021-07-13 西安微电子技术研究所 一种面向冷备份系统双极型集成电路应用的静电保护电路
JP7086018B2 (ja) 2019-03-12 2022-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN114551438B (zh) * 2022-02-24 2026-04-14 武汉华星光电半导体显示技术有限公司 显示面板

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578695A (en) * 1982-11-26 1986-03-25 International Business Machines Corporation Monolithic autobiased resistor structure and application thereof to interface circuits
US4977476A (en) * 1987-03-06 1990-12-11 Texas Instruments Incorporated Semiconductor switch
US5187562A (en) * 1989-10-30 1993-02-16 Siemens Aktiengesellschaft Input protection structure for integrated circuits
US5521783A (en) * 1993-09-17 1996-05-28 Analog Devices, Inc. Electrostatic discharge protection circuit
US5661332A (en) * 1994-01-27 1997-08-26 Nippondenso Co., Ltd. Semiconductor diffused resistor
US5821601A (en) * 1996-09-05 1998-10-13 Mitsubishi Denki Kabushiki Kaisha Bipolar semiconductor integrated circuit with a protection circuit
JP2004031576A (ja) * 2002-06-25 2004-01-29 Sanyo Electric Co Ltd 半導体集積回路装置
CN101097915A (zh) * 2006-06-12 2008-01-02 恩益禧电子股份有限公司 用于半导体器件的静电放电保护方法及器件
CN103077942A (zh) * 2011-09-27 2013-05-01 半导体元件工业有限责任公司 半导体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
JP3760945B2 (ja) * 2004-04-01 2006-03-29 セイコーエプソン株式会社 半導体装置及びその製造方法
US20070173026A1 (en) * 2006-01-23 2007-07-26 Bcd Semiconductor Manufacturing Limited Method for fabricating bipolar integrated circuits
JP2007317869A (ja) * 2006-05-25 2007-12-06 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5203850B2 (ja) * 2008-08-22 2013-06-05 パナソニック株式会社 静電気保護素子
JP2013073993A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578695A (en) * 1982-11-26 1986-03-25 International Business Machines Corporation Monolithic autobiased resistor structure and application thereof to interface circuits
US4977476A (en) * 1987-03-06 1990-12-11 Texas Instruments Incorporated Semiconductor switch
US5187562A (en) * 1989-10-30 1993-02-16 Siemens Aktiengesellschaft Input protection structure for integrated circuits
US5521783A (en) * 1993-09-17 1996-05-28 Analog Devices, Inc. Electrostatic discharge protection circuit
US5661332A (en) * 1994-01-27 1997-08-26 Nippondenso Co., Ltd. Semiconductor diffused resistor
US5821601A (en) * 1996-09-05 1998-10-13 Mitsubishi Denki Kabushiki Kaisha Bipolar semiconductor integrated circuit with a protection circuit
JP2004031576A (ja) * 2002-06-25 2004-01-29 Sanyo Electric Co Ltd 半導体集積回路装置
CN101097915A (zh) * 2006-06-12 2008-01-02 恩益禧电子股份有限公司 用于半导体器件的静电放电保护方法及器件
CN103077942A (zh) * 2011-09-27 2013-05-01 半导体元件工业有限责任公司 半导体装置

Also Published As

Publication number Publication date
JP2018046136A (ja) 2018-03-22
US10229903B2 (en) 2019-03-12
US20180076191A1 (en) 2018-03-15
JP6705726B2 (ja) 2020-06-03
CN107818976A (zh) 2018-03-20

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