CN107799642A - LED is encapsulated - Google Patents

LED is encapsulated Download PDF

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Publication number
CN107799642A
CN107799642A CN201710996109.9A CN201710996109A CN107799642A CN 107799642 A CN107799642 A CN 107799642A CN 201710996109 A CN201710996109 A CN 201710996109A CN 107799642 A CN107799642 A CN 107799642A
Authority
CN
China
Prior art keywords
layer
fluorescence
led chip
led
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710996109.9A
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Chinese (zh)
Inventor
吴香辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201710996109.9A priority Critical patent/CN107799642A/en
Publication of CN107799642A publication Critical patent/CN107799642A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a kind of LED encapsulation, the fluorescence coating of LED chip, the parcel LED chip and the hyaline layer of the parcel fluorescence coating including substrate, on the substrate, the LED chip, fluorescence coating and hyaline layer with the substrate connection, the hyaline layer includes transparent top-layer and the transparent side wall set around the transparent top-layer, the transparent side wall is gradually tapered up downwards by transparent top, it is big that upper end is presented, the small incline structure in lower end.LED encapsulation overall brightness provided by the invention is high.

Description

LED is encapsulated
Technical field
The present invention relates to LED technology field, specifically, is related to a kind of LED encapsulation structure.
Background technology
LED because good energy saving property, service life is long the characteristics of so that its application surface is more and more extensive, the LED bags of prior art Include substrate, the LED chip on substrate, the fluorescence coating for wrapping up LED chip and the hyaline layer for wrapping up fluorescence coating, wherein LED Chip is light source, and other surfaces of the light from LED chip in addition to bottom surface are launched, and the light emitted line of LED chip side wall passes through successively Cross fluorescence coating and hyaline layer and reflect, fluorescence coating and hyaline layer profile are typically approximately arch or rectangle, and LED chip is general Among hyaline layer, the arrangement can reduce the reflection of light contact surface between the layers, but light by rolling over twice Rear is penetrated to changing, the light that particularly LED chip side wall is sent, because the hyaline layer of prior art is generally epoxy Resin, refractive index 1.5, air refraction 1, the angle of total reflection is computed as 41.8 °, radiation direction is downward after hyaline layer refraction 0-48.2 ° of deflection, causes quite a few light to all point to substrate, although can enter one by setting reflector layer on substrate Reflection light is walked, but in reflection process, part luminous energy is converted into heat energy, reduces the overall brightness of LED encapsulation.
The content of the invention
It is an object of the invention to provide a kind of LED encapsulation structure of high brightness.
Technical scheme is used by LED encapsulation disclosed by the invention:A kind of LED encapsulation, including substrate, located at the base The fluorescence coating of LED chip, the parcel LED chip and the hyaline layer of the parcel fluorescence coating on plate, the LED chip, Fluorescence coating and hyaline layer include transparent top-layer and set around the transparent top-layer with the substrate connection, the hyaline layer Transparent side wall, the transparent side wall gradually tapers up downwards by transparent top, and it is big to be presented upper end, the small structure in lower end.
Preferably, the fluorescence coating includes fluorescence top layer and around the fluorescence side that the fluorescence top layer is set Wall, the fluorescence side wall gradually taper up downwards from fluorescence top layer, and presentation upper end is big, the small incline structure in lower end.
Preferably, conductive layer is provided between the substrate and LED chip, is provided with and runs through in the middle part of the conductive layer Seam, the conducting strip that conductive layer is divided into multiple mutually insulateds through seam, one of them is fixed in the LED chip bottom surface Conducting strip, the LED chip top surface are connected with another conducting strip by wire.
Preferably, the LED chip and the joint face of the conductive layer are coated with reflector layer.
Preferably, the hyaline layer refractive index is more than the fluorescence coating refractive index.
The beneficial effect of LED disclosed by the invention encapsulation is:The light emitted line of LED chip side wall successively by fluorescence coating with And hyaline layer and reflect, because transparent side wall gradually tapers up downwards from transparent top, it is big to be presented upper end, the small inclination in lower end Structure, in the case where angle of incident light is certain, the incidence angle of side wall light is improved, and then also improve refraction angle, made The light that must be reflected upward deflects that angle is larger, improves the utilization rate of side wall light so that LED encapsulation overall brightnesses are big.
Brief description of the drawings
Fig. 1 is the structural representation of LED encapsulation of the present invention;
Fig. 2 is the opticpath schematic diagram of LED encapsulation of the present invention.
Embodiment
The present invention is further elaborated and illustrated with reference to specific embodiment and Figure of description:It refer to Fig. 1, one Kind of LED encapsulation, including the fluorescence coating 30 of substrate 10, the LED chip 20 on the substrate, the parcel LED chip 20 with And the hyaline layer 40 of the parcel fluorescence coating 30, the LED chip 20, fluorescence coating 30 and hyaline layer 40 connect with the substrate 10 Connect.
The LED chip 20 is light source, and conductive layer, the conductive layer are provided between LED chip 20 on the substrate 10 Middle part is provided with through seam 12,12 is formed through seam by etch process, through seam 12 by the conductive layer be divided into it is multiple mutually One of conducting strip is fixed in the conducting strip of insulation, the bottom surface of LED chip 20, and the top surface of LED chip 20 is conductive with another Piece is connected by wire, and the link position of the bottom surface of LED chip 20 and conducting strip is coated with reflector layer, for reflection bottom face The light of transmitting.
The material of fluorescence coating 30 is fluorescent material and mixture of epoxy resins, and its refractive index is 1.5, and structure includes fluorescence top Layer 31 and the fluorescence side wall 32 set around the fluorescence top layer, the fluorescence side wall 32 are gradually received downwards from fluorescence top layer 31 Contracting, presentation upper end is big, and the small structure in lower end, the fluorescence top layer 31 is one of the forming with fluorescence side wall 32.
The material of hyaline layer 40 is transparent silica gel, and its refractive index is 1.4, and the Refractive Index of Material is less than the material of fluorescence coating 30 Material, the structure of hyaline layer 40 includes transparent top-layer 41 and the transparent side wall 42 set around the transparent top-layer 41, described Transparent side wall 42 is gradually tapered up downwards by transparent top 41, present upper end it is big, the small structure in lower end, the fluorescence top layer 41 with it is glimmering Light side wall 42 is one of the forming.
Fig. 2 is refer to, when light enters hyaline layer 40 through fluorescence coating 30, because the refractive index of fluorescence coating 30 is more than hyaline layer 40 refractive indexes, therefore the incidence angle of light is less than refraction angle, simultaneously as fluorescence side wall 32 is intilted structure so that glimmering Certain angle is tilted corresponding to the normal direction of light side wall 32, in the case where angle of incident light is certain, improves the incidence angle of light, Further increase corresponding refraction angle so that the light angle that is inclined upwardly is more.
Similarly, when light passes through 40 air inlet of hyaline layer, because air refraction is 1, the refraction of the material of hyaline layer 40 Rate is 1.4 so that the incidence angle of light is less than refraction angle, meanwhile, transparent 42 intilted structure of side wall, improve refraction angle Degree so that light further tilts upwards.
It should be noted that the inclination of fluorescence side wall 32 and transparent side wall 42, the angle of incidence angle is improved, when fluorescence side When wall 32 and transparent side wall 42 are tilted to a certain degree, total reflection phenomenon is will appear from, therefore in light concentrated area, it is necessary to control Incident angle, such a situation is avoided to occur.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention Matter and scope.

Claims (5)

1. a kind of LED encapsulation, including the fluorescence coating of substrate, the LED chip on the substrate, the parcel LED chip with And the hyaline layer of the parcel fluorescence coating, the LED chip, fluorescence coating and hyaline layer exist with the substrate connection, its feature In the hyaline layer includes transparent top-layer and the transparent side wall set around the transparent top-layer, and the transparent side wall is by saturating Bright top surface gradually tapers up downwards, and presentation upper end is big, the small structure in lower end.
2. LED encapsulation as claimed in claim 1, it is characterised in that the fluorescence coating includes fluorescence top layer and around described The fluorescence side wall that fluorescence top layer is set, the fluorescence side wall gradually taper up downwards from fluorescence top layer, and presentation upper end is big, and lower end is small Incline structure.
3. LED encapsulation as claimed in claim 1, it is characterised in that conductive layer, institute are provided between the substrate and LED chip State and be provided with the middle part of conductive layer through seam, the conducting strip that conductive layer is divided into multiple mutually insulateds through seam, the LED core One of conducting strip is fixed in piece bottom surface, and the LED chip top surface is connected with another conducting strip by wire.
4. LED encapsulation as claimed in claim 3, it is characterised in that the LED chip and the joint face of the conductive layer are coated with Reflector layer.
5. the LED encapsulation as described in claim 1-4 any one, it is characterised in that the hyaline layer refractive index is more than described Fluorescence coating refractive index.
CN201710996109.9A 2017-10-23 2017-10-23 LED is encapsulated Pending CN107799642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710996109.9A CN107799642A (en) 2017-10-23 2017-10-23 LED is encapsulated

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710996109.9A CN107799642A (en) 2017-10-23 2017-10-23 LED is encapsulated

Publications (1)

Publication Number Publication Date
CN107799642A true CN107799642A (en) 2018-03-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710996109.9A Pending CN107799642A (en) 2017-10-23 2017-10-23 LED is encapsulated

Country Status (1)

Country Link
CN (1) CN107799642A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110797451A (en) * 2018-08-01 2020-02-14 北京国科亿欧科技有限责任公司 LED packaging structure for spectrum adjustment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286997A (en) * 2005-04-01 2006-10-19 Okaya Electric Ind Co Ltd Light emitting diode and its fabrication process
US20080217631A1 (en) * 2007-03-07 2008-09-11 Everlight Electronics Co., Ltd. Semiconductor light emitting apparatus and the manufacturing method thereof
CN101520570A (en) * 2008-02-25 2009-09-02 奇美电子股份有限公司 Light emitting device, backlight module and a flat panel display
CN205920990U (en) * 2016-08-29 2017-02-01 厦门华联电子有限公司 There is not bowl cup LED

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286997A (en) * 2005-04-01 2006-10-19 Okaya Electric Ind Co Ltd Light emitting diode and its fabrication process
US20080217631A1 (en) * 2007-03-07 2008-09-11 Everlight Electronics Co., Ltd. Semiconductor light emitting apparatus and the manufacturing method thereof
CN101520570A (en) * 2008-02-25 2009-09-02 奇美电子股份有限公司 Light emitting device, backlight module and a flat panel display
CN205920990U (en) * 2016-08-29 2017-02-01 厦门华联电子有限公司 There is not bowl cup LED

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110797451A (en) * 2018-08-01 2020-02-14 北京国科亿欧科技有限责任公司 LED packaging structure for spectrum adjustment

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Application publication date: 20180313