CN107799642A - LED is encapsulated - Google Patents
LED is encapsulated Download PDFInfo
- Publication number
- CN107799642A CN107799642A CN201710996109.9A CN201710996109A CN107799642A CN 107799642 A CN107799642 A CN 107799642A CN 201710996109 A CN201710996109 A CN 201710996109A CN 107799642 A CN107799642 A CN 107799642A
- Authority
- CN
- China
- Prior art keywords
- layer
- fluorescence
- led chip
- led
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 210000004276 hyalin Anatomy 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 25
- 238000000576 coating method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005538 encapsulation Methods 0.000 claims abstract description 17
- 238000009738 saturating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- -1 refractive index 1.5 Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of LED encapsulation, the fluorescence coating of LED chip, the parcel LED chip and the hyaline layer of the parcel fluorescence coating including substrate, on the substrate, the LED chip, fluorescence coating and hyaline layer with the substrate connection, the hyaline layer includes transparent top-layer and the transparent side wall set around the transparent top-layer, the transparent side wall is gradually tapered up downwards by transparent top, it is big that upper end is presented, the small incline structure in lower end.LED encapsulation overall brightness provided by the invention is high.
Description
Technical field
The present invention relates to LED technology field, specifically, is related to a kind of LED encapsulation structure.
Background technology
LED because good energy saving property, service life is long the characteristics of so that its application surface is more and more extensive, the LED bags of prior art
Include substrate, the LED chip on substrate, the fluorescence coating for wrapping up LED chip and the hyaline layer for wrapping up fluorescence coating, wherein LED
Chip is light source, and other surfaces of the light from LED chip in addition to bottom surface are launched, and the light emitted line of LED chip side wall passes through successively
Cross fluorescence coating and hyaline layer and reflect, fluorescence coating and hyaline layer profile are typically approximately arch or rectangle, and LED chip is general
Among hyaline layer, the arrangement can reduce the reflection of light contact surface between the layers, but light by rolling over twice
Rear is penetrated to changing, the light that particularly LED chip side wall is sent, because the hyaline layer of prior art is generally epoxy
Resin, refractive index 1.5, air refraction 1, the angle of total reflection is computed as 41.8 °, radiation direction is downward after hyaline layer refraction
0-48.2 ° of deflection, causes quite a few light to all point to substrate, although can enter one by setting reflector layer on substrate
Reflection light is walked, but in reflection process, part luminous energy is converted into heat energy, reduces the overall brightness of LED encapsulation.
The content of the invention
It is an object of the invention to provide a kind of LED encapsulation structure of high brightness.
Technical scheme is used by LED encapsulation disclosed by the invention:A kind of LED encapsulation, including substrate, located at the base
The fluorescence coating of LED chip, the parcel LED chip and the hyaline layer of the parcel fluorescence coating on plate, the LED chip,
Fluorescence coating and hyaline layer include transparent top-layer and set around the transparent top-layer with the substrate connection, the hyaline layer
Transparent side wall, the transparent side wall gradually tapers up downwards by transparent top, and it is big to be presented upper end, the small structure in lower end.
Preferably, the fluorescence coating includes fluorescence top layer and around the fluorescence side that the fluorescence top layer is set
Wall, the fluorescence side wall gradually taper up downwards from fluorescence top layer, and presentation upper end is big, the small incline structure in lower end.
Preferably, conductive layer is provided between the substrate and LED chip, is provided with and runs through in the middle part of the conductive layer
Seam, the conducting strip that conductive layer is divided into multiple mutually insulateds through seam, one of them is fixed in the LED chip bottom surface
Conducting strip, the LED chip top surface are connected with another conducting strip by wire.
Preferably, the LED chip and the joint face of the conductive layer are coated with reflector layer.
Preferably, the hyaline layer refractive index is more than the fluorescence coating refractive index.
The beneficial effect of LED disclosed by the invention encapsulation is:The light emitted line of LED chip side wall successively by fluorescence coating with
And hyaline layer and reflect, because transparent side wall gradually tapers up downwards from transparent top, it is big to be presented upper end, the small inclination in lower end
Structure, in the case where angle of incident light is certain, the incidence angle of side wall light is improved, and then also improve refraction angle, made
The light that must be reflected upward deflects that angle is larger, improves the utilization rate of side wall light so that LED encapsulation overall brightnesses are big.
Brief description of the drawings
Fig. 1 is the structural representation of LED encapsulation of the present invention;
Fig. 2 is the opticpath schematic diagram of LED encapsulation of the present invention.
Embodiment
The present invention is further elaborated and illustrated with reference to specific embodiment and Figure of description:It refer to Fig. 1, one
Kind of LED encapsulation, including the fluorescence coating 30 of substrate 10, the LED chip 20 on the substrate, the parcel LED chip 20 with
And the hyaline layer 40 of the parcel fluorescence coating 30, the LED chip 20, fluorescence coating 30 and hyaline layer 40 connect with the substrate 10
Connect.
The LED chip 20 is light source, and conductive layer, the conductive layer are provided between LED chip 20 on the substrate 10
Middle part is provided with through seam 12,12 is formed through seam by etch process, through seam 12 by the conductive layer be divided into it is multiple mutually
One of conducting strip is fixed in the conducting strip of insulation, the bottom surface of LED chip 20, and the top surface of LED chip 20 is conductive with another
Piece is connected by wire, and the link position of the bottom surface of LED chip 20 and conducting strip is coated with reflector layer, for reflection bottom face
The light of transmitting.
The material of fluorescence coating 30 is fluorescent material and mixture of epoxy resins, and its refractive index is 1.5, and structure includes fluorescence top
Layer 31 and the fluorescence side wall 32 set around the fluorescence top layer, the fluorescence side wall 32 are gradually received downwards from fluorescence top layer 31
Contracting, presentation upper end is big, and the small structure in lower end, the fluorescence top layer 31 is one of the forming with fluorescence side wall 32.
The material of hyaline layer 40 is transparent silica gel, and its refractive index is 1.4, and the Refractive Index of Material is less than the material of fluorescence coating 30
Material, the structure of hyaline layer 40 includes transparent top-layer 41 and the transparent side wall 42 set around the transparent top-layer 41, described
Transparent side wall 42 is gradually tapered up downwards by transparent top 41, present upper end it is big, the small structure in lower end, the fluorescence top layer 41 with it is glimmering
Light side wall 42 is one of the forming.
Fig. 2 is refer to, when light enters hyaline layer 40 through fluorescence coating 30, because the refractive index of fluorescence coating 30 is more than hyaline layer
40 refractive indexes, therefore the incidence angle of light is less than refraction angle, simultaneously as fluorescence side wall 32 is intilted structure so that glimmering
Certain angle is tilted corresponding to the normal direction of light side wall 32, in the case where angle of incident light is certain, improves the incidence angle of light,
Further increase corresponding refraction angle so that the light angle that is inclined upwardly is more.
Similarly, when light passes through 40 air inlet of hyaline layer, because air refraction is 1, the refraction of the material of hyaline layer 40
Rate is 1.4 so that the incidence angle of light is less than refraction angle, meanwhile, transparent 42 intilted structure of side wall, improve refraction angle
Degree so that light further tilts upwards.
It should be noted that the inclination of fluorescence side wall 32 and transparent side wall 42, the angle of incidence angle is improved, when fluorescence side
When wall 32 and transparent side wall 42 are tilted to a certain degree, total reflection phenomenon is will appear from, therefore in light concentrated area, it is necessary to control
Incident angle, such a situation is avoided to occur.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected
The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention
Matter and scope.
Claims (5)
1. a kind of LED encapsulation, including the fluorescence coating of substrate, the LED chip on the substrate, the parcel LED chip with
And the hyaline layer of the parcel fluorescence coating, the LED chip, fluorescence coating and hyaline layer exist with the substrate connection, its feature
In the hyaline layer includes transparent top-layer and the transparent side wall set around the transparent top-layer, and the transparent side wall is by saturating
Bright top surface gradually tapers up downwards, and presentation upper end is big, the small structure in lower end.
2. LED encapsulation as claimed in claim 1, it is characterised in that the fluorescence coating includes fluorescence top layer and around described
The fluorescence side wall that fluorescence top layer is set, the fluorescence side wall gradually taper up downwards from fluorescence top layer, and presentation upper end is big, and lower end is small
Incline structure.
3. LED encapsulation as claimed in claim 1, it is characterised in that conductive layer, institute are provided between the substrate and LED chip
State and be provided with the middle part of conductive layer through seam, the conducting strip that conductive layer is divided into multiple mutually insulateds through seam, the LED core
One of conducting strip is fixed in piece bottom surface, and the LED chip top surface is connected with another conducting strip by wire.
4. LED encapsulation as claimed in claim 3, it is characterised in that the LED chip and the joint face of the conductive layer are coated with
Reflector layer.
5. the LED encapsulation as described in claim 1-4 any one, it is characterised in that the hyaline layer refractive index is more than described
Fluorescence coating refractive index.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710996109.9A CN107799642A (en) | 2017-10-23 | 2017-10-23 | LED is encapsulated |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710996109.9A CN107799642A (en) | 2017-10-23 | 2017-10-23 | LED is encapsulated |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107799642A true CN107799642A (en) | 2018-03-13 |
Family
ID=61533537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710996109.9A Pending CN107799642A (en) | 2017-10-23 | 2017-10-23 | LED is encapsulated |
Country Status (1)
Country | Link |
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CN (1) | CN107799642A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110797451A (en) * | 2018-08-01 | 2020-02-14 | 北京国科亿欧科技有限责任公司 | LED packaging structure for spectrum adjustment |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006286997A (en) * | 2005-04-01 | 2006-10-19 | Okaya Electric Ind Co Ltd | Light emitting diode and its fabrication process |
US20080217631A1 (en) * | 2007-03-07 | 2008-09-11 | Everlight Electronics Co., Ltd. | Semiconductor light emitting apparatus and the manufacturing method thereof |
CN101520570A (en) * | 2008-02-25 | 2009-09-02 | 奇美电子股份有限公司 | Light emitting device, backlight module and a flat panel display |
CN205920990U (en) * | 2016-08-29 | 2017-02-01 | 厦门华联电子有限公司 | There is not bowl cup LED |
-
2017
- 2017-10-23 CN CN201710996109.9A patent/CN107799642A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006286997A (en) * | 2005-04-01 | 2006-10-19 | Okaya Electric Ind Co Ltd | Light emitting diode and its fabrication process |
US20080217631A1 (en) * | 2007-03-07 | 2008-09-11 | Everlight Electronics Co., Ltd. | Semiconductor light emitting apparatus and the manufacturing method thereof |
CN101520570A (en) * | 2008-02-25 | 2009-09-02 | 奇美电子股份有限公司 | Light emitting device, backlight module and a flat panel display |
CN205920990U (en) * | 2016-08-29 | 2017-02-01 | 厦门华联电子有限公司 | There is not bowl cup LED |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110797451A (en) * | 2018-08-01 | 2020-02-14 | 北京国科亿欧科技有限责任公司 | LED packaging structure for spectrum adjustment |
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PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
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Application publication date: 20180313 |